CN111584371B - Manufacturing method of packaging shell and packaging shell - Google Patents
Manufacturing method of packaging shell and packaging shell Download PDFInfo
- Publication number
- CN111584371B CN111584371B CN202010451836.9A CN202010451836A CN111584371B CN 111584371 B CN111584371 B CN 111584371B CN 202010451836 A CN202010451836 A CN 202010451836A CN 111584371 B CN111584371 B CN 111584371B
- Authority
- CN
- China
- Prior art keywords
- metal powder
- mold
- shell
- circuit board
- packaging shell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 163
- 239000002184 metal Substances 0.000 claims abstract description 163
- 239000000843 powder Substances 0.000 claims abstract description 155
- 239000004065 semiconductor Substances 0.000 claims abstract description 88
- 238000000034 method Methods 0.000 claims description 38
- 238000002844 melting Methods 0.000 claims description 20
- 230000008018 melting Effects 0.000 claims description 20
- 238000003723 Smelting Methods 0.000 claims description 14
- 238000003466 welding Methods 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 238000001513 hot isostatic pressing Methods 0.000 claims description 4
- 239000007769 metal material Substances 0.000 abstract description 14
- 238000005538 encapsulation Methods 0.000 abstract description 10
- 238000007789 sealing Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 238000003754 machining Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007514 turning Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4817—Conductive parts for containers, e.g. caps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The application provides a manufacturing method of a packaging shell, the packaging shell, a manufacturing method of a semiconductor module and the semiconductor module. The manufacturing method of the packaging shell comprises the following steps: obtaining a circuit board, and manufacturing a first die with the same size as the circuit board and a second die with the same size as the semiconductor component; placing a first metal powder into the first mold and a second metal powder into the second mold; placing a second mold comprising the second metal powder in the first mold; and applying high temperature and high pressure to the first metal powder and the second metal powder to form a packaging shell. In this application embodiment, through with semiconductor components and parts assorted metal material setting with the position that semiconductor components and parts correspond on the encapsulation casing for the encapsulation casing can satisfy requirements such as semiconductor components and parts heat conduction, inflation, has improved the stability of the good semiconductor devices of encapsulation.
Description
Technical Field
The present disclosure relates to the field of semiconductor technologies, and in particular, to a method for manufacturing a package housing, a method for manufacturing a semiconductor module, and a semiconductor module.
Background
With the development of economy and the progress of society, various devices are developed in the directions of integration, miniaturization, reliability, stability, environmental protection and the like. The packaging shell is widely used for packaging semiconductor components such as aerospace, microwave communication and the like. However, most of the package housings currently use a single material, such as a package housing made of copper. This approach fails to meet the functional requirements of high local thermal conductivity and local expansion of the package housing.
Disclosure of Invention
An object of the present invention is to provide a method for manufacturing a package housing, a method for manufacturing a semiconductor module, and a semiconductor module, so as to solve the problem that "most of the package housings are made of a single material and cannot meet the functional requirements of local high thermal conductivity and local expansion of the package housing".
The invention is realized by the following steps:
in a first aspect, an embodiment of the present application provides a method for manufacturing a package housing, including: obtaining a circuit board; the circuit board is integrated with a semiconductor component; manufacturing a first die with the same size as the circuit board and a second die with the same size as the semiconductor component based on the size of the circuit board and the size of the semiconductor component; placing a first metal powder into the first mold and a second metal powder into the second mold; the strength, the thermal conductivity and the expansion strength of the second metal powder are matched with those of the semiconductor component; placing a second mold comprising the second metal powder in the first mold; wherein the position of the second die in the first die is the same as the position of the semiconductor component on the circuit board; applying high temperature and high pressure to the first metal powder and the second metal powder to form a packaging shell; wherein the shape of the packaging shell is the same as that of the first mold.
In this application embodiment, the encapsulation casing of preparation adopts different metal material, and will with semiconductor components and parts assorted metal material setting with the position that semiconductor components and parts correspond on the encapsulation casing for the encapsulation casing can satisfy requirements such as semiconductor components and parts heat conduction, inflation, and then has improved the stability of the good semiconductor devices of encapsulation.
With reference to the technical solution provided by the first aspect, in some possible implementation manners, the applying high temperature and high pressure to the first metal powder and the second metal powder to form a package housing includes: applying high temperature and high pressure to the first metal powder and the second metal powder to form an initial shell; the shape of the initial shell is the same as that of the first mold, and the initial shell comprises a top plate and a side plate connected with the top plate; putting one end of the side plate, which is far away from the top plate, into third metal powder for smelting; wherein the melting point of the third metal powder is lower than the melting point of the side plate; and cooling the initial shell after smelting to form the packaging shell.
In the embodiment of the application, after the initial shell is formed, one end of the side plate of the initial shell, which is far away from the top plate, is put into third metal powder with a melting point lower than that of the side plate for smelting, and the smelted initial shell is cooled to form the packaging shell. Due to the fact that the melting point of the third metal powder is low, follow-up laser sealing welding is facilitated, and the packaging shell further meets the requirements of local laser sealing welding.
With reference to the technical solution provided by the first aspect, in some possible implementations, after the applying high temperature and high pressure to the first metal powder and the second metal powder to form an initial shell, the method further includes: and performing stress relief annealing on the initial shell to remove the internal stress of the initial shell.
In the embodiment of the application, the initial shell is subjected to stress relief annealing to remove the internal stress of the initial shell, so that the condition that the initial shell is deformed and cracked is reduced.
With reference to the technical solution provided by the first aspect, in some possible implementation manners, the applying high temperature and high pressure to the first metal powder and the second metal powder to form a package housing includes: applying high temperature and high pressure to the first metal powder and the second metal powder to form an initial shell; the shape of the initial shell is the same as that of the first mold, and the initial shell comprises a top plate and a side plate connected with the top plate; an inner cavity is formed between the top plate and the side plate; putting one side of the side plate, which is far away from the inner cavity, into fourth metal powder for smelting; wherein a melting point of the fourth metal powder is lower than a melting point of the side plate, and a rigidity of the fourth metal powder is higher than a rigidity of the side plate; and cooling the initial shell after smelting to form the packaging shell.
In the embodiment of the application, after the initial shell is formed, one end, far away from the top plate, of the side plate of the initial shell is placed into fourth metal powder, the melting point of which is lower than that of the side plate and the rigidity of which is higher than that of the side plate, for smelting, and the smelted initial shell is cooled to form the packaging shell. The melting point of the fourth metal powder is lower, so that subsequent laser sealing is facilitated, the packaging shell further meets the requirement of local laser sealing, and the rigidity of the fourth metal powder is higher, so that the packaging shell also meets the requirement of local high rigidity.
With reference to the technical solution provided by the first aspect, in some possible implementations, after the applying high temperature and high pressure to the first metal powder and the second metal powder to form a package housing, the method further includes: based on the circuit structure of the circuit board, a hole is formed in the packaging shell.
In the embodiment of the application, after the packaging shell is formed, the packaging shell is provided with the hole based on the circuit structure of the circuit board, so that the subsequent circuit board can be conveniently used.
With reference to the technical solution provided by the first aspect, in some possible implementation manners, the applying high temperature and high pressure to the first metal powder and the second metal powder to form a package housing includes: and applying high temperature and high pressure to the first metal powder and the second metal powder through a hot isostatic pressing machine, thereby forming the packaging shell.
In the embodiment of the application, the hot isostatic pressing machine can enable the first metal powder and the second metal powder to be uniformly pressed in all directions under the action of high temperature and high pressure, so that the processed packaging shell is high in density and better in uniformity.
With reference to the technical solution provided by the first aspect, in some possible implementations, before the placing the first metal powder into the first mold and the placing the second metal powder into the second mold, the method further includes: adding hydrogen into the first metal powder and the second metal powder to remove oxides in the first metal powder and the second metal powder; accordingly, the placing a first metal powder into the first mold and a second metal powder into the second mold includes: placing the first metal powder after removing the oxide into the first mold and placing the second metal powder after removing the oxide into the second mold.
Because the oxide can release gas in the high-temperature forming process, and the air tightness of the product is poor, therefore, in the embodiment of the application, hydrogen is introduced into the first metal powder and the second metal powder in advance, and then the oxide is reduced and removed, so that the packaging shell prepared subsequently has good air tightness.
In a second aspect, an embodiment of the present application provides a package housing, which is manufactured by the foregoing first aspect embodiment and/or by combining some possible implementation manners of the foregoing first aspect embodiment.
In a third aspect, an embodiment of the present application provides a method for manufacturing a semiconductor module, where the method includes: placing the circuit board inside the packaging shell provided by the embodiment of the second aspect; obtaining a bottom plate with the same size as the packaging shell; and welding the bottom plate and the side plate of the packaging shell by using laser seal welding so as to enable the circuit board to be positioned between the packaging shell and the bottom plate.
In a fourth aspect, embodiments of the present application provide a semiconductor module fabricated by the method for fabricating a semiconductor module according to the third aspect.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and that those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
Fig. 1 is a flowchart illustrating steps of a method for manufacturing a package housing according to an embodiment of the present disclosure.
Fig. 2 is a schematic diagram of a circuit board according to an embodiment of the present application.
Fig. 3 is a schematic view of a mold corresponding to the circuit board according to an embodiment of the present disclosure.
Fig. 4 is a schematic combination diagram of a mold provided in an embodiment of the present application.
Fig. 5 is a schematic structural diagram of a package housing according to an embodiment of the present application.
Fig. 6 is a flowchart illustrating a method for manufacturing a semiconductor module according to an embodiment of the present disclosure.
Icon: 10-a package housing; 100-a first metal body; 200-a second metal body; 300-small hole.
Detailed Description
The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application.
Most of the package housings at present use a single material, such as a package housing made of copper. This approach fails to meet the functional requirements of high local thermal conductivity and local expansion of the package housing. That is, as the semiconductor device is diversified and integrated in function and different in function required by different parts of the housing, part of the chips need high thermal conductive materials. Therefore, if the same material is used for the entire housing, the stability of the packaged semiconductor device is inevitably affected.
In view of the above problems, the present inventors have studied and researched to provide the following embodiments to solve the above problems.
Referring to fig. 1, an embodiment of the present application provides a method for manufacturing a package housing, including: step S101-step S105.
Step S101: obtaining a circuit board; and semiconductor components are integrated on the circuit board.
Step S102: and manufacturing a first die with the same size as the circuit board and a second die with the same size as the semiconductor component based on the size of the circuit board and the size of the semiconductor component.
Step S103: placing a first metal powder into the first mold and a second metal powder into the second mold; and the strength, the heat conductivity coefficient and the expansion strength of the second metal powder are matched with those of the semiconductor component.
Step S104: placing a second mold comprising the second metal powder in the first mold; wherein the position of the second die in the first die is the same as the position of the semiconductor component on the circuit board.
Step S105: applying high temperature and high pressure to the first metal powder and the second metal powder to form a packaging shell; wherein the shape of the packaging shell is the same as that of the first mold.
The package housing manufactured through the above steps may be used to package the circuit board in step S101, and may also be used to package other circuit boards having the same structure as the circuit board.
In the embodiment of the application, the packaging shell manufactured by the method adopts different metal materials, and the metal material matched with the semiconductor component is arranged at the position, corresponding to the semiconductor component, on the packaging shell, so that the packaging shell can meet the requirements of heat conduction, expansion and the like of the semiconductor component, and the stability of the packaged semiconductor component is further improved.
The above method is described in detail with reference to specific examples.
Step S101: obtaining a circuit board; and semiconductor components are integrated on the circuit board.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a circuit board according to an embodiment of the present disclosure, where the circuit board includes a semiconductor device a and a semiconductor device B. Different semiconductor components have different thermal conductivities and expansion coefficients. It should be explained that the expansion coefficient is a physical quantity that characterizes the thermal expansion properties of the object, i.e. the length, area, volume increase of the object when it is heated.
It should be noted that fig. 2 shows a schematic structure of only one circuit board. The number and the arrangement position of semiconductor components on the circuit board are not limited in the application.
Step S102: and manufacturing a first die with the same size as the circuit board and a second die with the same size as the semiconductor component based on the size of the circuit board and the size of the semiconductor component.
Wherein, can directly measure the size of circuit board and semiconductor components's size through the dipperstick, then the circuit board size that measures based on the dipperstick and the size preparation of semiconductor components and parts and the same first mould of circuit board size and the same second mould of size with semiconductor components and parts.
Referring to fig. 3, the three molds shown in fig. 3 are fabricated based on the size of the circuit board shown in fig. 2 and the size of the semiconductor devices on the circuit board. For example, after the size of the circuit board is measured by the measuring ruler, a first die which is the same as the size of the circuit board is manufactured; after the size of the semiconductor component A is measured by the measuring ruler, a second die A1 with the same size as the semiconductor component A is manufactured; after the size of the semiconductor component B was measured by the measuring scale, a second mold B1 having the same size as the semiconductor component B was manufactured.
Alternatively, the size of the circuit board and the size of the semiconductor component may be measured by scanning. For example, an image of the circuit board is obtained by a scanner, and then the size of the circuit board in the image and the size of the semiconductor component in the circuit board are obtained by a computer. And finally, manufacturing a first mold and a second mold, wherein the first mold and the second mold are the same as the circuit board in size, based on the circuit board size and the size of the semiconductor element in the circuit board, which are obtained by the computer. It will be appreciated that in order to facilitate the computer to obtain the exact dimensions of the circuit board and the semiconductor components in the circuit board, the circuit board may be placed in advance on the background of the label scale when the image of the circuit board is acquired. And then the computer can calculate the actual size of the circuit board and the actual size of the semiconductor element in the circuit board according to the ratio of the pixel size to the actual size.
It can be understood that, since the circuit board is generally square, the shape of the manufactured mold is also square. The manufactured mold can comprise side plates and a bottom plate. For example, when the circuit board is rectangular, the bottom plate of the manufactured mold is the same as the bottom plate of the circuit board, and the four sides of the bottom plate are connected with a side plate.
Step S103: placing a first metal powder into the first mold and a second metal powder into the second mold; and the strength, the heat conductivity coefficient and the expansion strength of the second metal powder are matched with those of the semiconductor component.
And after the manufactured first die and the second die are obtained, selecting a metal material matched with the first die and the second die based on the attributes of the semiconductor component. For example, copper and molybdenum may be selected for better thermal conductivity based on thermal conductivity. Correspondingly, copper powder or molybdenum powder is placed in the second mold. If the difference between the semiconductor components is large, for example, the semiconductor component a in fig. 2 generates heat more easily than the semiconductor component B, so copper powder may be put in the second mold a1 in fig. 3, and molybdenum powder having a lower thermal conductivity than the copper powder may be put in the second mold B1. Accordingly, the metal material matching the semiconductor component is selected based on the angle of the expansion coefficient and the metal material matching the semiconductor component is selected based on the strength of the metal material. It is understood that the metal material may be an alloy, such as a tungsten copper alloy, a molybdenum copper alloy, an aluminum alloy, a titanium alloy, and the like, and the present application is not limited thereto.
Further, the second metal powders may be the same or different, and the present application is not limited thereto.
The particle size of the metal powder may be 1 to 100 micrometers, for example, 4 micrometers, 8 micrometers, 50 micrometers, and the like, which is not limited in the present application.
The gas is released during the high-temperature forming process due to the oxide in the powder, so that the airtightness of the product is poor. Thus, in an embodiment of the present application, prior to placing the first metal powder in the first mold and the second metal powder in the second mold, the method further comprises: and adding hydrogen into the first metal powder and the second metal powder to remove oxides in the first metal powder and the second metal powder.
In the embodiment of the application, the oxide in the powder can be reduced and removed by introducing hydrogen into the first metal powder and the second metal powder, so that the subsequently prepared packaging shell is ensured to have good air tightness.
Step S104: placing a second mold comprising the second metal powder in the first mold; wherein the position of the second die in the first die is the same as the position of the semiconductor component on the circuit board.
Referring to fig. 4, in fig. 4, the position of the second mold a1 corresponds to the position of the semiconductor device a on the circuit board, and the position of the second mold a2 corresponds to the position of the semiconductor device B on the circuit board.
Step S105: applying high temperature and high pressure to the first metal powder and the second metal powder to form a packaging shell; wherein the shape of the packaging shell is the same as that of the first mold.
After the first mold and the second mold are placed, a hot-pressing sintering process is adopted, namely, high temperature and high pressure are applied to the first metal powder and the second metal powder, so that the first metal powder and the second metal powder are sintered to form the packaging shell.
In the embodiment of the present application, a hot isostatic press is used to apply high temperature and high pressure to the first metal powder and the second metal powder, so as to form the package housing. It should be noted that the hot isostatic pressing machine can enable the first metal powder and the second metal powder to be stressed uniformly in all directions, and the package shell manufactured by the method is high in compactness and good in uniformity.
In the present embodiment, the high temperature means a temperature of 500 degrees celsius or more, and the high pressure means a pressure of 10 mpa or more. Of course, the specific values of the high temperature and high pressure are determined according to actual conditions, and the application is not limited.
In one embodiment, a package case is formed by applying high temperature and high pressure to a first metal powder and a second metal powder, the package case including: and applying high temperature and high pressure to the first metal powder and the second metal powder to form an initial shell. The shape of the initial shell is the same as that of the first mold, and the initial shell comprises a top plate and a side plate connected with the top plate; putting one end of the side plate far away from the top plate into third metal powder for smelting; wherein the melting point of the third metal powder is lower than the melting point of the side plate. And cooling the initial shell after smelting to form the packaging shell.
That is, after the initial shell is formed by applying high temperature and high pressure to the first metal powder and the second metal powder, one end of the side plate of the initial shell, which is far away from the top plate, is put into the third metal powder, the melting point of which is lower than that of the side plate, and the third metal powder is melted. The melting point of the side plate is the melting point of the first metal powder. After the low-melting-point metal powder is smelted and cooled and solidified, the low-melting-point metal powder is integrated with one end of the side plate, which is far away from the top plate. When the subsequent laser sealing is carried out, the third metal with low melting point can be used for laser sealing, so that the packaging shell can meet the requirement of local laser sealing.
Optionally, after the initial shell is formed by applying high temperature and high pressure to the first metal powder and the second metal powder, the method further includes: and performing stress relief annealing on the initial shell to remove the internal stress of the initial shell. It is to be explained that the article may develop internal stresses during pressing, casting, welding, heat treatment, machining and other processes. In most cases, a portion of the residual stress will remain in the metal after the process is completed. Residual stress can cause workpiece cracking, deformation or dimensional change, and the residual stress also improves the chemical activity of the metal, and particularly easily causes intergranular corrosion cracking under the action of residual tensile stress. Thus, residual stresses will affect the performance of the material or cause premature failure of the workpiece. By stress relief annealing is understood a heat treatment in which the cold deformed metal is heated below the recrystallization temperature to remove internal stresses, but still retain the cold work hardening effect. Therefore, in the embodiment of the application, the internal stress of the initial shell can be removed by performing stress relief annealing on the initial shell, so that the condition that the initial shell is deformed and cracked is reduced, and the quality of the initial shell is improved.
As another embodiment, a method of forming a package case by applying high temperature and high pressure to first metal powder and second metal powder includes: and applying high temperature and high pressure to the first metal powder and the second metal powder to form an initial shell. The initial shell is the same as the first mold in shape, the initial shell comprises a top plate and side plates connected with the top plate, and an inner cavity is formed between the top plate and the side plates. And putting one side of the side plate far away from the inner cavity into fourth metal powder for smelting. Wherein the melting point of the fourth metal powder is lower than that of the side plate, and the rigidity of the fourth metal powder is higher than that of the side plate; and cooling the initial shell after smelting to form the packaging shell.
The embodiment is mainly used for improving the rigidity of the side plate of the packaging shell, so that one side, far away from the inner cavity, of the side plate of the packaging shell is placed into the fourth metal powder, the melting point of the fourth metal powder is lower than that of the side plate, the rigidity of the fourth metal powder is higher than that of the side plate, the fourth metal powder and the side plate are melted, and after the fourth metal powder is melted, cooled and solidified, the fourth metal powder and the side plate are combined into a whole, and the purpose of improving the rigidity of the side plate is achieved.
Optionally, after applying high temperature and high pressure to the first metal powder and the second metal powder to form the package housing, the method further includes: and performing finish machining on the packaging shell.
The finish machining of the packaging shell can be grinding the surface of the packaging shell, and the finish machining process comprises precision cutting machining (such as diamond boring, precision turning, wide-edge finish planing and the like) and high-cleanness high-precision grinding. The precision machining precision is generally 10 to 0.1 μm, and the surface roughness Ra is 0.1 μm or less.
Optionally, after applying high temperature and high pressure to the first metal powder and the second metal powder to form the package housing, the method further includes: based on the circuit structure of the circuit board, a hole is formed in the package housing.
The packaging shell with multiple performances can be manufactured by the method. Referring to fig. 5, fig. 5 shows a package housing 10 for packaging the circuit board shown in fig. 2, which is manufactured by the method for manufacturing a package housing according to the above embodiment. The package case 10 includes a first metal body 100 made of a second metal powder, a second metal body 200 made of a second metal powder, and a small hole 300. The first metal body 100 corresponds to the semiconductor component a, and the second metal body 200 corresponds to the semiconductor component B.
To sum up, the package shell manufactured by the manufacturing method of the package shell provided by the embodiment of the application adopts different metal materials, and the metal material matched with the semiconductor component is arranged at the position of the package shell corresponding to the semiconductor component, so that the package shell can meet the requirements of heat conduction, expansion and the like of the semiconductor component, and the stability of the packaged semiconductor device is further improved.
Referring to fig. 6, based on the same inventive concept, an embodiment of the present invention further provides a method for manufacturing a semiconductor module, including: step S201-step S203.
Step S201: the circuit board is placed inside the package housing.
The packaging shell is manufactured by the manufacturing method of the packaging shell provided by the embodiment.
Step S202: a bottom plate of the same size as the package housing is obtained.
Wherein, the size of the bottom plate needs to be the same as the size of the top plate of the packaging shell, and then the sealing performance of the packaging is ensured, therefore, the bottom plate which is the same as the packaging shell in size needs to be manufactured according to the size of the packaging shell.
Step S203: and welding the bottom plate and the side plate of the packaging shell by using laser seal welding so as to enable the circuit board to be positioned between the packaging shell and the bottom plate.
Through the steps, a semiconductor module can be prepared, wherein the semiconductor module is composed of a packaging shell and an internal circuit board. Because the encapsulation casing of preparation adopts different metal material, and will with the semiconductor components and parts assorted metal material setting on the circuit board at the position that encapsulation casing and semiconductor components and parts correspond for the encapsulation casing can satisfy requirements such as semiconductor components and parts heat conduction, inflation, and then has improved whole semiconductor module's stability.
In this document, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A method of making a package housing, comprising:
obtaining a circuit board; the circuit board is integrated with a semiconductor component;
manufacturing a first die with the same size as the circuit board and a second die with the same size as the semiconductor component based on the size of the circuit board and the size of the semiconductor component;
placing a first metal powder into the first mold and a second metal powder into the second mold; the strength, the thermal conductivity and the expansion strength of the second metal powder are matched with those of the semiconductor component; the number of the second dies is two, and the materials of the second metal powder put into the two second dies are different;
placing a second mold comprising the second metal powder in the first mold; wherein the position of the second die in the first die is the same as the position of the semiconductor component on the circuit board;
applying high temperature and high pressure to the first metal powder and the second metal powder to form a packaging shell; wherein the shape of the packaging shell is the same as that of the first mold.
2. The method for manufacturing a package according to claim 1, wherein the applying high temperature and high pressure to the first metal powder and the second metal powder to form a package includes:
applying high temperature and high pressure to the first metal powder and the second metal powder to form an initial shell; the shape of the initial shell is the same as that of the first mold, and the initial shell comprises a top plate and a side plate connected with the top plate;
putting one end of the side plate, which is far away from the top plate, into third metal powder for smelting; wherein the melting point of the third metal powder is lower than the melting point of the side plate;
and cooling the initial shell after smelting to form the packaging shell.
3. The method of manufacturing a package housing according to claim 2, wherein after the applying the high temperature and high pressure to the first metal powder and the second metal powder to form an initial housing, the method further comprises:
and performing stress relief annealing on the initial shell to remove the internal stress of the initial shell.
4. The method for manufacturing a package according to claim 1, wherein the applying high temperature and high pressure to the first metal powder and the second metal powder to form a package includes:
applying high temperature and high pressure to the first metal powder and the second metal powder to form an initial shell; the shape of the initial shell is the same as that of the first mold, and the initial shell comprises a top plate and a side plate connected with the top plate; an inner cavity is formed between the top plate and the side plate;
putting one side of the side plate, which is far away from the inner cavity, into fourth metal powder for smelting; wherein a melting point of the fourth metal powder is lower than a melting point of the side plate, and a rigidity of the fourth metal powder is higher than a rigidity of the side plate;
and cooling the initial shell after smelting to form the packaging shell.
5. The method of manufacturing a package according to claim 1, wherein after applying the high temperature and high pressure to the first metal powder and the second metal powder to form a package, the method further comprises:
based on the circuit structure of the circuit board, a hole is formed in the packaging shell.
6. The method for manufacturing a package according to claim 1, wherein the applying high temperature and high pressure to the first metal powder and the second metal powder to form a package includes:
and applying high temperature and high pressure to the first metal powder and the second metal powder through a hot isostatic pressing machine, thereby forming the packaging shell.
7. The method of making a package housing of claim 1, wherein prior to the placing a first metal powder in the first mold and a second metal powder in the second mold, the method further comprises:
adding hydrogen into the first metal powder and the second metal powder to remove oxides in the first metal powder and the second metal powder;
accordingly, the placing a first metal powder into the first mold and a second metal powder into the second mold includes:
placing the first metal powder after removing the oxide into the first mold and placing the second metal powder after removing the oxide into the second mold.
8. A package housing, characterized in that it is manufactured by a method according to any one of claims 1-7.
9. A method of fabricating a semiconductor module, the method comprising:
placing a circuit board inside the package housing of claim 8;
obtaining a bottom plate with the same size as the packaging shell;
and welding the bottom plate and the side plate of the packaging shell by using laser seal welding so as to enable the circuit board to be positioned between the packaging shell and the bottom plate.
10. A semiconductor module produced by the method for producing a semiconductor module according to claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010451836.9A CN111584371B (en) | 2020-05-25 | 2020-05-25 | Manufacturing method of packaging shell and packaging shell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010451836.9A CN111584371B (en) | 2020-05-25 | 2020-05-25 | Manufacturing method of packaging shell and packaging shell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111584371A CN111584371A (en) | 2020-08-25 |
| CN111584371B true CN111584371B (en) | 2022-04-01 |
Family
ID=72125342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010451836.9A Active CN111584371B (en) | 2020-05-25 | 2020-05-25 | Manufacturing method of packaging shell and packaging shell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111584371B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113299610A (en) * | 2021-05-21 | 2021-08-24 | 中国电子科技集团公司第二十九研究所 | High-reliability packaging structure and packaging method for microwave part cover plate |
| CN118712070A (en) * | 2024-08-30 | 2024-09-27 | 中国电子科技集团公司第二十九研究所 | Design and processing method of microwave piece packaging shell with adjustable local physical properties |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992006494A1 (en) * | 1990-10-09 | 1992-04-16 | Eastman Kodak Company | Amalgam preform, method of forming the preform and method of bonding therewith |
| WO2002073628A2 (en) * | 2001-03-09 | 2002-09-19 | Schering Ag | Package protective case for radioactive substance and syringe assembly for radioactive solution |
| CN1644277A (en) * | 2004-12-14 | 2005-07-27 | 重庆工学院 | Electronic sealed metal casing powder injecting forming binder formula |
| CN101888057A (en) * | 2009-05-11 | 2010-11-17 | 唐福云 | Preparation method of laser diode packaging case |
| CN201736286U (en) * | 2010-07-13 | 2011-02-09 | 万向电动汽车有限公司 | Battery shell mould |
| US8143717B2 (en) * | 2008-06-16 | 2012-03-27 | Hcc Aegis, Inc. | Surface mount package with ceramic sidewalls |
| EP2960935A1 (en) * | 2013-02-25 | 2015-12-30 | KYOCERA Corporation | Package for housing electronic component and electronic device |
| CN105728695A (en) * | 2014-12-09 | 2016-07-06 | 北京有色金属研究总院 | Preparation method of high-orientation heat conduction material of composite structure |
| CN107546131A (en) * | 2017-08-09 | 2018-01-05 | 合肥圣达电子科技实业有限公司 | A kind of preparation method for being used to encapsulate the metal shell of electronic building brick |
| CN108405857A (en) * | 2018-04-04 | 2018-08-17 | 鑫精合激光科技发展（北京）有限公司 | A kind of silumin electronic package shell 3D printing increasing material manufacturing method |
| CN109841766A (en) * | 2019-03-22 | 2019-06-04 | 苏州融睿电子科技有限公司 | A kind of manufacturing method of cover plate assembly, battery and cover plate assembly |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009008457A1 (en) * | 2007-07-09 | 2009-01-15 | Jfe Precision Corporation | Heat radiating component for electronic component, case for electronic component, carrier for electronic component, and package for electronic component |
-
2020
- 2020-05-25 CN CN202010451836.9A patent/CN111584371B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992006494A1 (en) * | 1990-10-09 | 1992-04-16 | Eastman Kodak Company | Amalgam preform, method of forming the preform and method of bonding therewith |
| WO2002073628A2 (en) * | 2001-03-09 | 2002-09-19 | Schering Ag | Package protective case for radioactive substance and syringe assembly for radioactive solution |
| CN1644277A (en) * | 2004-12-14 | 2005-07-27 | 重庆工学院 | Electronic sealed metal casing powder injecting forming binder formula |
| US8143717B2 (en) * | 2008-06-16 | 2012-03-27 | Hcc Aegis, Inc. | Surface mount package with ceramic sidewalls |
| CN101888057A (en) * | 2009-05-11 | 2010-11-17 | 唐福云 | Preparation method of laser diode packaging case |
| CN201736286U (en) * | 2010-07-13 | 2011-02-09 | 万向电动汽车有限公司 | Battery shell mould |
| EP2960935A1 (en) * | 2013-02-25 | 2015-12-30 | KYOCERA Corporation | Package for housing electronic component and electronic device |
| CN105728695A (en) * | 2014-12-09 | 2016-07-06 | 北京有色金属研究总院 | Preparation method of high-orientation heat conduction material of composite structure |
| CN107546131A (en) * | 2017-08-09 | 2018-01-05 | 合肥圣达电子科技实业有限公司 | A kind of preparation method for being used to encapsulate the metal shell of electronic building brick |
| CN108405857A (en) * | 2018-04-04 | 2018-08-17 | 鑫精合激光科技发展（北京）有限公司 | A kind of silumin electronic package shell 3D printing increasing material manufacturing method |
| CN109841766A (en) * | 2019-03-22 | 2019-06-04 | 苏州融睿电子科技有限公司 | A kind of manufacturing method of cover plate assembly, battery and cover plate assembly |
Non-Patent Citations (5)
| Title |
|---|
| "TO257T型管壳封装设计及电子封装用95%Al_2O_3金属化层制备";齐欣;《中国优秀硕士学位论文全文数据库》;20170930;全文 * |
| Richard K. Ulrich ; William D. Brown."Packaging of MEMS and MOEMS: Challenges and a Case Study," in Advanced Electronic Packaging.《IEEE》.2006, * |
| SiC_p/Cu合金电子封装壳体半固态成形模拟;宋普光等;《特种铸造及有色合金》;20110720(第07期);全文 * |
| 一种新型金属表面安装外壳的设计与制作;蔡国儒等;《压电与声光》;20040425(第02期);全文 * |
| 金属封装外壳烧结模具的设计;蒙高安等;《电子工艺技术》;20070330(第02期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111584371A (en) | 2020-08-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111584371B (en) | Manufacturing method of packaging shell and packaging shell | |
| JP4793622B2 (en) | Ceramic circuit board, power module, and method of manufacturing power module | |
| US20060246314A1 (en) | Method of producing a heat dissipation substrate of molybdenum powder impregnated with copper with rolling in primary and secondary directions | |
| US6569380B2 (en) | Enclosure for a semiconductor device | |
| CN110169211B (en) | Metal-ceramic bonded substrate and method for producing same | |
| CN105382263A (en) | Method for manufacturing ultrahigh-heat-conductive diamond-Al composite material with surface capable of being machined | |
| WO2017087065A1 (en) | Heat spreaders with integrated preforms | |
| US7083759B2 (en) | Method of producing a heat dissipation substrate of molybdenum powder impregnated with copper with rolling in primary and secondary directions | |
| CN107787147B (en) | A kind of semisolid communication radiating shell and its production method | |
| US7563646B2 (en) | Molded ceramic surface mount package | |
| US5305947A (en) | Method for manufacturing semiconductor-mounting heat-radiative substrates and semiconductor package using the same | |
| JP3479738B2 (en) | Semiconductor package and method of manufacturing heat dissipation substrate used therein | |
| JPH06268117A (en) | Heat radiating substrate for semiconductor device and its manufacture | |
| EP1345264A1 (en) | Integral-type ceramic circuit board and method of producing same | |
| JP3548991B2 (en) | Heat dissipating substrate and manufacturing method thereof | |
| EP1231633B1 (en) | Material of heat-dissipating plate on which semiconductor is mounted, method for fabricating the same, and ceramic package produced by using the same | |
| JPH08186204A (en) | Heat sink and its manufacture | |
| CN116552092A (en) | Preparation method of superconducting thermal diamond-copper composite foil | |
| WO1988003087A1 (en) | Ceramic-glass-metal composite | |
| CN101392335B (en) | Method for preparing tungsten copper composite encapsulation material | |
| US5886269A (en) | Substrate and heat sink for a semiconductor and method of manufacturing the same | |
| WO2017162217A1 (en) | Electronic device mid-frame and manufacturing method thereof | |
| CN211929868U (en) | Glass sintering directional die for multi-pin connector | |
| CN114406260B (en) | Production process of high-reliability CPC composite material | |
| WO2017086911A1 (en) | Sintered heat spreaders with inserts |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |