CN112071806A - High-power metal ceramic packaging shell for large-size multi-chip circuit and preparation method thereof - Google Patents
High-power metal ceramic packaging shell for large-size multi-chip circuit and preparation method thereof Download PDFInfo
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- CN112071806A CN112071806A CN202010895565.6A CN202010895565A CN112071806A CN 112071806 A CN112071806 A CN 112071806A CN 202010895565 A CN202010895565 A CN 202010895565A CN 112071806 A CN112071806 A CN 112071806A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 73
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 46
- 239000002184 metal Substances 0.000 title claims abstract description 46
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000003466 welding Methods 0.000 claims abstract description 22
- 230000017525 heat dissipation Effects 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000007789 sealing Methods 0.000 claims abstract description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 14
- 239000011195 cermet Substances 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 9
- 238000004080 punching Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 3
- 229910000833 kovar Inorganic materials 0.000 claims description 3
- 238000003698 laser cutting Methods 0.000 claims description 3
- 238000003754 machining Methods 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000005096 rolling process Methods 0.000 claims description 3
- 239000011265 semifinished product Substances 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 abstract description 4
- 230000008859 change Effects 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 238000003860 storage Methods 0.000 abstract description 3
- 230000001133 acceleration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000011104 metalized film Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4817—Conductive parts for containers, e.g. caps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention provides a high-power metal ceramic packaging shell for a large-size multi-chip circuit and a preparation method thereof, wherein the packaging shell comprises a cover plate, a shell surrounding frame and a radiating bottom plate, wherein the cover plate is arranged at the top of the shell surrounding frame and used for sealing an opening at the upper part of the shell surrounding frame; the side wall of the enclosure frame is provided with a plurality of windows, ceramic pieces are loaded in the windows, one ends of the ceramic pieces, which are positioned outside the enclosure frame, are provided with welding areas, the welding areas are connected with leads, one ends of the ceramic pieces, which are positioned inside the enclosure frame, are provided with bonding areas for bonding the internal packaged chip and an external circuit, and the welding areas are electrically connected with the bonding areas; the heat dissipation bottom plate is located the shell and encloses frame bottom, including first metal sheet, second metal sheet and the third metal sheet of coincide connection. The invention is used for packaging the high-power electronic components of the multi-chip circuit, and can avoid the reliability problem that the conventional plastic package and glass package devices are difficult to avoid the storage and use processes of heat dissipation, external physical and chemical environment change resistance and the like of the high-power devices.
Description
Technical Field
The invention relates to the field of microelectronic ceramic packaging, in particular to a packaging shell and a preparation method thereof.
Background
With the continuous development of the fields of automobiles, electronic consumer products, aviation, aerospace and the like, the use frequency of electronic components is gradually increased, the power is continuously increased, in order to continuously increase the functions required to be integrated in limited weight and space volume, a plurality of independent packaging devices with the same function or different functions are generally required to be assembled together, the integration level of the packaging structure is low, the space utilization rate is low, the occupied volume is large, and the weight is heavy. The conventional plastic package and glass package devices are difficult to avoid the reliability problems of the high-power devices in the storage and use processes such as heat dissipation, external physical and chemical environment change resistance and the like.
Disclosure of Invention
In order to solve the problems, the invention provides a high-power metal ceramic packaging shell for a large-size multi-chip circuit and a preparation method thereof, which are used for packaging a high-power electronic component of the multi-chip circuit and can meet the requirements that the development of electronic components used in the fields of automobiles, electronic consumer goods, aviation, aerospace and the like gradually increases the use frequency and the power of the electronic components, and the integration function is required to be continuously increased in limited weight and space volume; and the reliability problems of the conventional plastic package and glass package devices, which are difficult to avoid in the storage and use processes of heat dissipation, external physical and chemical environment change resistance and the like of the high-power device, can be avoided.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a large-power metal ceramic packaging shell for a large-size multi-chip circuit comprises a cover plate, a shell surrounding frame and a heat dissipation bottom plate, wherein:
the cover plate is arranged at the top of the outer enclosure frame and used for sealing an opening at the upper part of the outer enclosure frame;
the side wall of the shell enclosure frame is provided with a plurality of windows, ceramic pieces are loaded in the windows, one ends of the ceramic pieces, which are positioned on the outer side of the shell enclosure frame, are provided with welding areas, the welding areas are connected with leads, one ends of the ceramic pieces, which are positioned on the inner side of the shell enclosure frame, are provided with bonding areas for bonding an internal packaging chip and an external circuit, and the welding areas are electrically connected with the bonding areas;
the radiating bottom plate is located at the bottom of the shell enclosure frame and comprises a first metal plate, a second metal plate and a third metal plate which are connected in an overlapped mode from top to bottom.
Preferably, the cover plate seals the top of the enclosure frame by welding with a sealing ring at the upper end of the enclosure frame.
Preferably, the inner side wall of the enclosure frame of the outer shell is provided with a plurality of supporting pieces, and the number of the supporting pieces is not less than six.
Preferably, the upper end surface of the heat dissipation bottom plate is provided with grooves along two sides of the outer portion of the enclosure frame of the housing, and the end portion of the heat dissipation bottom plate is provided with a threaded hole for fixing the enclosure.
Preferably, the first metal plate and the third metal plate are made of copper, and the second metal plate is made of a tungsten-copper alloy.
Preferably, the welding area and the bonding area are of a sheet structure and are attached to the inside of the ceramic piece.
A preparation method of a high-power metal ceramic packaging shell for a large-size multi-chip circuit comprises the following steps:
1) machining through holes on a plurality of pieces of aluminum oxide green ceramic chips by using a mechanical punching method;
2) transferring a tungsten metallization film layer with the thickness of 5-30um onto an alumina green ceramic wafer in a screen printing mode;
3) processing cavity bodies on two side parts of a part of the alumina green ceramic chip by adopting a mechanical punching or laser cutting method;
4) superposing and compacting a plurality of the alumina green ceramic chips processed in the step 3) and part of the alumina green ceramic chips obtained in the step 2) to form a green ceramic component; cutting the superposed ceramic assembly into single ceramic bodies from the upper surface of the ceramic bodies by a dicing saw, and then metalizing the upper, lower, left and right end surfaces of the ceramic bodies; finally, sintering the ceramic piece for 24 hours at a high temperature of 1600 ℃ to obtain a ceramic piece;
5) according to the set appearance of the packaging shell, the installation size of an internal chip and the size of a ceramic piece, a shell surrounding frame with a window and a support piece structure is manufactured by Kovar materials through linear cutting;
6) sequentially stacking a first metal plate, a second metal plate and a third metal plate together, and heating, pressurizing, rolling and linearly cutting to form a heat dissipation bottom plate;
7) respectively welding the radiating bottom plate, the shell surrounding frame, the ceramic piece and the lead to obtain a semi-finished product packaging shell;
8) and depositing a metal coating on the surface of the semi-finished packaging shell by an electroplating method to obtain the finished packaging shell.
Preferably, the length and width of the alumina green ceramic chip in the step 1) are 200mm × 200mm, and the thickness is 1.0 mm.
Preferably, in the step 5), the outer enclosure frame is cleaned by a solvent, and is subjected to high-temperature annealing treatment in a protective atmosphere.
Preferably, the thermal expansion coefficient of the heat dissipation base plate in the step 6) is 5-8x10-5/℃。
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, the cover plate is welded with the sealing ring at the upper end part of the enclosure frame of the shell to seal the top of the enclosure frame of the shell, so that the air tightness reliability of the packaging shell is effectively improved.
2. The ceramic part with the structure is provided with holes and metallized surface layers, and is a universal multilayer ceramic preparation process, can realize consistent large-scale production, and is a batch production preparation technology.
3. Compared with the packaging shell in the prior art, the packaging shell has the advantages of excellent heat dissipation performance, good chemical stability and high structural strength, and the external welding area and the internal chip bonding area are interconnected by adopting a screen printing technology.
4. The invention provides a packaging structure which can be used for packaging four control chips and circuits, has the use frequency within 18GHz and the power of about 500W, integrates a plurality of control chips and circuits in limited weight and space volume, has high space utilization rate and light weight, and can be used for resisting mechanical impact of 3-5 atmospheric pressure physical environment and acceleration of more than 500 g.
Drawings
FIG. 1 is a schematic front view of a package according to the present invention;
FIG. 2 is a schematic top view of a package according to the present invention;
FIG. 3 is a side view of the package housing of the present invention;
FIG. 4 is a top view of the top opening of the package housing of the present invention;
FIG. 5 is a schematic structural view of a ceramic body according to the present invention;
FIG. 6 is an exploded view of the heat sink base of the present invention;
1. a cover plate; 2. a housing enclosure frame; 21. a seal ring; 3. a heat dissipation base plate; 31. a first metal plate; 32. a second metal plate; 33. a third metal plate; 4. a window; 5. a ceramic piece; 6. a welding zone; 7. a lead wire; 8. a bonding region; 9. a support member; 10. a trench; 11. a threaded bore.
Detailed Description
The present invention is described in detail below with reference to the drawings and examples, but it should be pointed out again that the examples are only used for further illustration of the present invention, and should not be construed as limiting the scope of the present invention, and that those skilled in the art can make some insubstantial modifications or adjustments according to the above disclosure.
A large-size multi-chip circuit is with high-power cermet encapsulation shell, as shown in fig. 1-6, including apron 1, shell enclose frame 2 and radiating bottom plate 3, wherein:
the cover plate 1 is arranged at the top of the outer enclosure frame 2 and closes an opening at the upper part of the outer enclosure frame 2;
the side wall of the shell surrounding frame 2 is provided with a plurality of windows 4, ceramic pieces 5 are loaded in the windows 4, one end, located on the outer side of the shell surrounding frame 2, of each ceramic piece 5 is provided with a welding area 6, each welding area 6 is connected with a lead 7, one end, located on the inner side of the shell surrounding frame 2, of each ceramic piece 5 is provided with a bonding area 8 for bonding an internal packaging chip and an external circuit, and each welding area 6 is electrically connected with the bonding area 8;
the heat dissipation bottom plate 3 is located at the bottom of the enclosure frame 2 and comprises a first metal plate 31, a second metal plate 32 and a third metal plate 33 which are connected in an overlapped mode from top to bottom.
The cover plate 1 seals the top of the enclosure frame 2 through the welding of the sealing ring 21 at the upper end of the enclosure frame 2.
A plurality of supporting pieces 9 are arranged on the inner side wall of the outer enclosure frame 2, and the number of the supporting pieces 9 is six; the support provides for the enclosure to withstand mechanical shock of 3-5 atmospheres of physical environment and accelerations above 500 g.
The first metal plate 31 and the third metal plate 33 are made of copper, and the second metal plate 32 is made of a tungsten-copper alloy.
The welding area 6 and the bonding area 8 are of a sheet structure and are attached to the inside of the ceramic piece.
Example 1:
the preparation method of the high-power metal ceramic packaging shell for the large-size multi-chip circuit comprises the following steps:
1) processing a through hole for grounding on a plurality of pieces of aluminum oxide green ceramic chips with the length and width of 200mm multiplied by 200mm and the thickness of 1.0mm by a mechanical punching method;
2) transferring a tungsten metalized film layer with the thickness of 25um onto an alumina green ceramic wafer in a screen printing mode;
3) processing cavity bodies on two side parts of a part of the alumina green ceramic chip by adopting a mechanical punching or laser cutting method;
4) superposing and compacting a plurality of the alumina green ceramic chips processed in the step 3) and part of the alumina green ceramic chips obtained in the step 2) to form a green ceramic component; cutting the superposed ceramic assembly into single ceramic bodies from the upper surface of the ceramic bodies by a dicing saw, and then metalizing the upper, lower, left and right end surfaces of the ceramic bodies; finally, sintering the ceramic piece for 24 hours at a high temperature of 1600 ℃ to obtain a ceramic piece;
5) according to the set appearance of the packaging shell, the installation size of an internal chip and the size of a ceramic piece, a shell surrounding frame with a window and a support piece structure is manufactured by Kovar materials through linear cutting; then cleaning the outer shell enclosure frame by using a solvent, and carrying out high-temperature annealing treatment on the outer shell enclosure frame in a protective atmosphere to eliminate residual stress and hardening in the machining process;
6) sequentially stacking a first metal plate, a second metal plate and a third metal plate together, and heating, pressurizing, rolling and linearly cutting to form a heat dissipation bottom plate; the thermal expansion coefficient of the material is 5-8x10 measured by a thermal expansion tester-5Analyzing no gap and holes with diameter larger than 0.01mm among the multilayer metal plates by X-ray or ultrasonic scanning;
7) respectively welding the radiating bottom plate, the shell surrounding frame, the ceramic piece and the lead to obtain a semi-finished product packaging shell;
8) and depositing a metal coating on the surface of the semi-finished packaging shell by an electroplating method to obtain the finished packaging shell.
Although illustrative embodiments of the present invention have been described above to facilitate the understanding of the present invention by those skilled in the art, it should be understood that the present invention is not limited to the scope of the embodiments, and various changes may be made apparent to those skilled in the art as long as they are within the spirit and scope of the present invention as defined and defined by the appended claims, and all matters of the invention which utilize the inventive concepts are protected.
Claims (10)
1. A large-power metal ceramic packaging shell for a large-size multi-chip circuit is characterized in that: comprises a cover plate, a shell surrounding frame and a heat dissipation bottom plate, wherein
The cover plate is arranged at the top of the outer enclosure frame and used for sealing an opening at the upper part of the outer enclosure frame;
the side wall of the shell enclosure frame is provided with a plurality of windows, ceramic pieces are loaded in the windows, one ends of the ceramic pieces, which are positioned on the outer side of the shell enclosure frame, are provided with welding areas, the welding areas are connected with leads, one ends of the ceramic pieces, which are positioned on the inner side of the shell enclosure frame, are provided with bonding areas for bonding an internal packaging chip and an external circuit, and the welding areas are electrically connected with the bonding areas;
the radiating bottom plate is located at the bottom of the shell enclosure frame and comprises a first metal plate, a second metal plate and a third metal plate which are connected in an overlapped mode from top to bottom.
2. A high power cermet package can for large scale multichip circuits according to claim 1, wherein: the cover plate is welded with a sealing ring at the upper end of the enclosure frame of the shell to seal the top of the enclosure frame of the shell.
3. A high power cermet package can for large scale multichip circuits according to claim 1, wherein: the shell encloses and is equipped with many support pieces on the frame inside wall, six are no less than to support piece's number.
4. A high power cermet package can for large scale multichip circuits according to claim 1, wherein: the upper end face of the heat dissipation bottom plate is provided with grooves along two sides of the outer portion of the shell surrounding frame, and threaded holes for fixing and packaging the shell are formed in the end portion of the heat dissipation bottom plate in a chiseled mode.
5. A high power cermet package can for large scale multichip circuits according to claim 1, wherein: the first metal plate and the third metal plate are made of copper, and the second metal plate is made of tungsten-copper alloy.
6. A high power cermet package can for large scale multichip circuits according to claim 1, wherein: the welding area and the bonding area are of sheet structures and are attached to the inside of the ceramic piece.
7. A preparation method of a high-power metal ceramic packaging shell for a large-size multi-chip circuit is characterized by comprising the following steps:
machining through holes on a plurality of pieces of aluminum oxide green ceramic chips by using a mechanical punching method;
transferring a tungsten metallization film layer with the thickness of 5-30um onto an alumina green ceramic wafer in a screen printing mode;
processing cavity bodies on two side parts of a part of the alumina green ceramic chip by adopting a mechanical punching or laser cutting method;
superposing and compacting a plurality of the alumina green ceramic chips processed in the step 3) and part of the alumina green ceramic chips obtained in the step 2) to form a green ceramic component; cutting the superposed ceramic assembly into single ceramic bodies from the upper surface of the ceramic bodies by a dicing saw, and then metalizing the upper, lower, left and right end surfaces of the ceramic bodies; finally, sintering the ceramic piece for 24 hours at a high temperature of 1600 ℃ to obtain a ceramic piece;
according to the set appearance of the packaging shell, the installation size of an internal chip and the size of a ceramic piece, a shell surrounding frame with a window and a support piece structure is manufactured by Kovar materials through linear cutting;
sequentially stacking a first metal plate, a second metal plate and a third metal plate together, and heating, pressurizing, rolling and linearly cutting to form a heat dissipation bottom plate;
respectively welding the radiating bottom plate, the shell surrounding frame, the ceramic piece and the lead to obtain a semi-finished product packaging shell;
and depositing a metal coating on the surface of the semi-finished packaging shell by an electroplating method to obtain the finished packaging shell.
8. The method of claim 7, wherein the step of forming a high power cermet package can includes the steps of: the length and width of the alumina green ceramic chip in the step 1) are 200mm multiplied by 200mm, and the thickness is 1.0 mm.
9. The method of claim 7, wherein the step of forming a high power cermet package can includes the steps of: and 5) cleaning the outer enclosure frame by using a solvent, and carrying out high-temperature annealing treatment on the outer enclosure frame in a protective atmosphere.
10. The method of claim 7, wherein the step of forming a high power cermet package can includes the steps of: the thermal expansion coefficient of the heat dissipation bottom plate in the step 6) is 5-8x10-5/℃。
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| CN202010895565.6A CN112071806A (en) | 2020-08-31 | 2020-08-31 | High-power metal ceramic packaging shell for large-size multi-chip circuit and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112687637A (en) * | 2020-12-24 | 2021-04-20 | 中国电子科技集团公司第十三研究所 | Vertical metal ceramic packaging shell, device and preparation method |
| CN114823928A (en) * | 2022-04-26 | 2022-07-29 | 中国电子科技集团公司第四十三研究所 | Photoelectric packaging shell and manufacturing process thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005019897A (en) * | 2003-06-27 | 2005-01-20 | Kyocera Corp | Package for containing semiconductor element, and semiconductor device |
| CN103441077A (en) * | 2013-07-15 | 2013-12-11 | 中国电子科技集团公司第五十五研究所 | Method for manufacturing shell of microwave high-power pipe |
| CN104112551A (en) * | 2014-07-16 | 2014-10-22 | 中国电子科技集团公司第五十五研究所 | Novel millimeter-wave ceramic insulator |
| CN206834165U (en) * | 2017-06-02 | 2018-01-02 | 朝阳无线电元件有限责任公司 | A kind of TO cermets shell structure |
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| JP2005019897A (en) * | 2003-06-27 | 2005-01-20 | Kyocera Corp | Package for containing semiconductor element, and semiconductor device |
| CN103441077A (en) * | 2013-07-15 | 2013-12-11 | 中国电子科技集团公司第五十五研究所 | Method for manufacturing shell of microwave high-power pipe |
| CN104112551A (en) * | 2014-07-16 | 2014-10-22 | 中国电子科技集团公司第五十五研究所 | Novel millimeter-wave ceramic insulator |
| CN206834165U (en) * | 2017-06-02 | 2018-01-02 | 朝阳无线电元件有限责任公司 | A kind of TO cermets shell structure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112687637A (en) * | 2020-12-24 | 2021-04-20 | 中国电子科技集团公司第十三研究所 | Vertical metal ceramic packaging shell, device and preparation method |
| CN114823928A (en) * | 2022-04-26 | 2022-07-29 | 中国电子科技集团公司第四十三研究所 | Photoelectric packaging shell and manufacturing process thereof |
| CN114823928B (en) * | 2022-04-26 | 2024-02-20 | 中国电子科技集团公司第四十三研究所 | Photoelectric packaging shell and manufacturing process thereof |
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Application publication date: 20201211 |