CN206834165U - A kind of TO cermets shell structure - Google Patents
A kind of TO cermets shell structure Download PDFInfo
- Publication number
- CN206834165U CN206834165U CN201720633431.0U CN201720633431U CN206834165U CN 206834165 U CN206834165 U CN 206834165U CN 201720633431 U CN201720633431 U CN 201720633431U CN 206834165 U CN206834165 U CN 206834165U
- Authority
- CN
- China
- Prior art keywords
- electrode
- electrode piece
- molybdenum copper
- piece
- shell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
The utility model discloses a kind of TO cermets shell structure, including shell housing, internal electrode and outer electrode;The shell housing includes rectangle iron-nickel alloy frame, the tungsten copper bottom plate installed in rectangle iron-nickel alloy frame bottom and the beryllium oxide insulating trip being sintered at the top of tungsten copper bottom plate;The internal electrode includes the first molybdenum copper electrode piece and the second molybdenum copper electrode piece, and the first molybdenum copper electrode piece and the second molybdenum copper electrode piece are sintered on beryllium oxide insulating trip respectively;The outer electrode includes first electrode piece, second electrode piece and the 3rd electrode slice, the utility model TO cermet shell structures, dexterously the electrode of general T O metal ceramic tube shell products is drawn by chip to the bonding the 3rd electrode slice, transformed to by chip to the bonding the second molybdenum copper electrode piece;Ceramic cartridge product size is consistent with plastic packaging product, has reached the purpose of compatible exchange.
Description
Technical field
Technical field of semiconductor device is the utility model is related to, specially a kind of TO cermets shell structure.
Background technology
Semiconductor( semiconductor), refer under normal temperature electric conductivity between conductor(conductor)With insulator
(insulator)Between material.Semiconductor has a wide range of applications on radio, television set and thermometric.Such as diode
It is exactly the device using semiconductor fabrication.Semiconductor refers to that a kind of electric conductivity can be controlled, scope can from insulator to conductor it
Between material.No matter from the perspective of science and technology or economic development, the importance of semiconductor is all very huge.Today is big
Partial electronic product, as the core cell among computer, mobile phone or digital audio tape all has pole with semiconductor
For close connection.Common semi-conducting material has silicon, germanium, GaAs etc., and silicon is even more in various semi-conducting materials, in business
Industry applies upper most influential one kind.
At present, the semi-conductor discrete device such as import TO profiles power MOSFET is Plastic Package form, plastic packaging product quilt
Non-tight device is known as, domestic expert has been presented for the requirement of high-quality level product disabling plastic device.In order to meet me
The product of the military highly reliable application field of state and national defence key project is supporting, it is necessary to substitute plastic packaging knot with cermet encapsulating structure
Structure.Current domestic general T O Can structures, its internal only big weld zone, for welding chip, its internal electrode
Exit is integrated with outside three outer leads, and middle leads are directly welded with big weld zone, and both sides lead is vacantly as chip
The bonding region that electrode is drawn, due to bonding region limited area, it is impossible to carry out the bonding of a plurality of crude aluminum line, can not meet high current
It is required that.
Utility model content
The purpose of this utility model is to provide a kind of TO cermets shell structure, to solve to carry in above-mentioned background technology
The problem of going out.
To achieve the above object, the utility model provides following technical scheme:A kind of TO cermets shell structure, including
Shell housing, internal electrode and outer electrode;The shell housing includes rectangle iron-nickel alloy frame, closed installed in rectangular iron nickel
The tungsten copper bottom plate of golden-rimmed frame bottom and the beryllium oxide insulating trip being sintered at the top of tungsten copper bottom plate;The internal electrode includes first
Molybdenum copper electrode piece and the second molybdenum copper electrode piece, and to be sintered in beryllium oxide respectively exhausted for the first molybdenum copper electrode piece and the second molybdenum copper electrode piece
On embolium;The outer electrode includes first electrode piece, second electrode piece and the 3rd electrode slice, and first electrode piece, second
Sintered and formed by ceramic insulator between electrode slice and the 3rd electrode slice and shell housing;The first electrode piece is in shell shell
Internal portion is hanging;The second electrode piece and the 3rd electrode slice pass through copper post and the first molybdenum copper electrode piece and the second molybdenum copper electricity respectively
Pole piece sinters;The coating of the shell surface of shell is nickel dam.
As a kind of optimal technical scheme of the present utility model, the size of the first molybdenum copper electrode piece for 9.5mm ×
9.2mm, the size of the second molybdenum copper electrode piece is 2.0mm × 9.2mm;First molybdenum copper electrode piece and the second molybdenum copper electrode piece are
Molybdenum copper product, plating nickel on surface, nickel layer thickness are 5 μm~8.9 μm.
As a kind of optimal technical scheme of the present utility model, the connected mode between the internal electrode and outer electrode
To be electrically connected with;Copper post is 70A-100A by current capacity value scope.
As a kind of optimal technical scheme of the present utility model, the rectangle iron-nickel alloy frame is close to exit position
Put, using local reduction's technology, increase itself and exit distance, it is smaller to solve shell dimension while ensureing that product is pressure-resistant
The larger contradiction with lead spacing.
As a kind of optimal technical scheme of the present utility model, the first molybdenum copper electrode piece is chip weld zone, described
The bonding region that second molybdenum copper electrode piece is drawn for chip heavy current electrode, bonding a plurality of crude aluminum line, it is allowed to flow through high current.
As a kind of optimal technical scheme of the present utility model, the rectangle iron-nickel alloy frame, before sintering outer lead,
Rectangle iron-nickel alloy frame bottom both sides are subjected to local reduction, wall thickness is thinned to 0.7mm by 1.3mm, and it is 4mm that length, which is thinned,.
Beneficial effect
Compared with prior art, the beneficial effects of the utility model are:The utility model TO cermet shell structures, institute
Stating shell housing includes rectangle iron-nickel alloy frame, the tungsten copper bottom plate installed in rectangle iron-nickel alloy frame bottom and is sintered in
Beryllium oxide insulating trip at the top of tungsten copper bottom plate;The internal electrode includes the first molybdenum copper electrode piece and the second molybdenum copper electrode piece, and
First molybdenum copper electrode piece and the second molybdenum copper electrode piece are sintered on beryllium oxide insulating trip respectively;The outer electrode includes first
Electrode slice, second electrode piece and the 3rd electrode slice, and first electrode piece, second electrode piece and the 3rd electrode slice and shell housing it
Between pass through ceramic insulator sintering form;The first electrode piece is hanging in shell enclosure interior;The second electrode piece and
Three electrode slices are sintered by copper post and the first molybdenum copper electrode piece and the second molybdenum copper electrode piece respectively;Dexterously general T O metals are made pottery
The electrode of porcelain tube shell product is drawn by chip to the bonding the 3rd electrode slice, is transformed to by chip to the second molybdenum copper electrode piece
Bonding;Ceramic cartridge product size is consistent with plastic packaging product, has reached the purpose of compatible exchange;It is practical, it is easy to
Promote the use of.
Brief description of the drawings
Fig. 1 is side view of the present utility model;
Fig. 2 is top view of the present utility model;
In figure:1- internal electrodes, 2- outer electrodes, 3- rectangle iron-nickel alloys frame, 4- tungsten coppers bottom plate, the insulation of 5- beryllium oxide
Piece, 6- the first molybdenum copper electrodes piece, 7- the second molybdenum copper electrodes piece, 8- first electrodes piece, 9- second electrodes piece, the electrode slices of 10- the 3rd,
11- ceramic insulators, 12- copper posts.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out
Clearly and completely describing, it is clear that described embodiment is only the utility model part of the embodiment, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made
The every other embodiment obtained, belong to the scope of the utility model protection.
Refer to a kind of Fig. 1-2 embodiments provided by the utility model:A kind of TO cermets shell structure, including shell
Housing, internal electrode 1 and outer electrode 2;The shell housing includes rectangle iron-nickel alloy frame 3, closed installed in rectangular iron nickel
The tungsten copper bottom plate 4 of the golden-rimmed bottom of frame 3 and the beryllium oxide insulating trip 5 for being sintered in the top of tungsten copper bottom plate 4;The internal electrode 1 wraps
The first molybdenum copper electrode piece 6 and the second molybdenum copper electrode piece 7 are included, and the first molybdenum copper electrode piece 6 and the second molybdenum copper electrode piece 7 sinter respectively
On beryllium oxide insulating trip 5;The outer electrode 2 includes first electrode piece 8, the electrode slice 10 of second electrode piece 9 and the 3rd, and
Sintered and formed by ceramic insulator 11 between first electrode piece 8, the electrode slice 10 of second electrode piece 9 and the 3rd and shell housing;
The first electrode piece 8 is hanging in shell enclosure interior;The electrode slice 10 of second electrode piece 9 and the 3rd passes through copper post 12 respectively
Sintered with the first molybdenum copper electrode piece 6 and the second molybdenum copper electrode piece 7;The coating of the shell surface of shell is nickel dam;Described first
The size of molybdenum copper electrode piece 6 is 9.5mm × 9.2mm, and the size of the second molybdenum copper electrode piece 7 is 2.0mm × 9.2mm;First
Molybdenum copper electrode piece 6 and the second molybdenum copper electrode piece 7 are molybdenum copper product, and plating nickel on surface, nickel layer thickness is 5 μm~8.9 μm;The inside
Connected mode between electrode 1 and outer electrode 2 is electric connection;In order to ensure high current ability, tungsten copper bottom plate 4 is by general T O
One the first molybdenum copper electrode piece 6 of cermet shell makes two electrode slices into, wherein the first molybdenum copper electrode piece 6 is used for welded pipe
Core, the second molybdenum copper electrode piece 7 are used for tube core high current exit(The emitter stage of source electrode, pliotron such as power MOSFET,
The negative electrode of power scr)Bonding region, a plurality of crude aluminum line can be bonded;First molybdenum copper electrode piece 6 and the second molybdenum copper electrode piece 7
It is connected using copper post 12 with external electrode, its current capacity is up to 70A-100A;The rectangle iron-nickel alloy frame 3 is close to extraction
End position, using local reduction's technology, increase itself and exit distance, solve shell dimension while ensureing that product is pressure-resistant
The smaller and larger contradiction of lead spacing;The first molybdenum copper electrode piece 6 is chip weld zone, the second molybdenum copper electrode piece 7
The bonding region drawn for chip heavy current electrode, bonding a plurality of crude aluminum line, it is allowed to flow through high current;The rectangle iron-nickel alloy
Frame 3, before sintering outer lead, the bottom both sides of rectangle iron-nickel alloy frame 3 are subjected to local reduction, wall thickness is thinned by 1.3mm
To 0.7mm, it is 4mm that length, which is thinned,.
In summary
The utility model TO cermet shell structures, the shell housing include rectangle iron-nickel alloy frame 3, are arranged on
The tungsten copper bottom plate 4 of the bottom of rectangle iron-nickel alloy frame 3 and the beryllium oxide insulating trip 5 for being sintered in the top of tungsten copper bottom plate 4;In described
Portion's electrode 1 includes the first molybdenum copper electrode piece 6 and the second molybdenum copper electrode piece 7, and the first molybdenum copper electrode piece 6 and the second molybdenum copper electrode piece
7 are sintered on beryllium oxide insulating trip 5 respectively;The outer electrode 2 includes first electrode piece 8, the electricity of second electrode piece 9 and the 3rd
Pole piece 10, and pass through ceramic insulator 11 between first electrode piece 8, the electrode slice 10 of second electrode piece 9 and the 3rd and shell housing
Sintering is formed;The first electrode piece 8 is hanging in shell enclosure interior;The electrode slice 10 of second electrode piece 9 and the 3rd is distinguished
Sintered by copper post 12 and the first molybdenum copper electrode piece 6 and the second molybdenum copper electrode piece 7;Dexterously by general T O rectangle iron-nickel alloys side
The electrode of the product of frame 3 is drawn by chip to the bonding the 3rd electrode slice, is transformed to by chip to the second molybdenum copper electrode piece 7
Bonding;Ceramic cartridge product size is consistent with plastic packaging product, has reached the purpose of compatible exchange;It is practical, it is easy to push away
It is wide to use.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality
Body or operation make a distinction with another entity or operation, and not necessarily require or imply and deposited between these entities or operation
In any this actual relation or order.Moreover, term " comprising ", "comprising" or its any other variant are intended to
Nonexcludability includes, so that process, method, article or equipment including a series of elements not only will including those
Element, but also the other element including being not expressly set out, or it is this process, method, article or equipment also to include
Intrinsic key element.In the absence of more restrictions.By sentence " including one ... the key element limited, it is not excluded that
Other identical element in the process including the key element, method, article or equipment also be present ".
While there has been shown and described that embodiment of the present utility model, for the ordinary skill in the art,
It is appreciated that these embodiments can be carried out with a variety of changes in the case where not departing from principle of the present utility model and spirit, repaiied
Change, replace and modification, the scope of the utility model are defined by the appended claims and the equivalents thereof.
Claims (6)
1. a kind of TO cermets shell structure, including shell housing, internal electrode(1)And outer electrode(2);Its feature exists
In:The shell housing includes rectangle iron-nickel alloy frame(3), installed in rectangle iron-nickel alloy frame(3)The tungsten copper bottom of bottom
Plate(4)And it is sintered in tungsten copper bottom plate(4)The beryllium oxide insulating trip at top(5);The internal electrode(1)Including the first molybdenum copper electricity
Pole piece(6)With the second molybdenum copper electrode piece(7), and the first molybdenum copper electrode piece(6)With the second molybdenum copper electrode piece(7)Oxygen is sintered in respectively
Change beryllium insulating trip(5)On;The outer electrode(2)Including first electrode piece(8), second electrode piece(9)With the 3rd electrode slice
(10), and first electrode piece(8), second electrode piece(9)With the 3rd electrode slice(10)Pass through ceramic insulation between shell housing
Son(11)Sintering is formed;The first electrode piece(8)It is hanging in shell enclosure interior;The second electrode piece(9)With the 3rd electricity
Pole piece(10)Pass through copper post respectively(12)With the first molybdenum copper electrode piece(6)With the second molybdenum copper electrode piece(7)Sintering;The shell shell
The coating in body surface face is nickel dam.
A kind of 2. TO cermets shell structure according to claim 1, it is characterised in that:The first molybdenum copper electrode piece
(6)Size be 9.5mm × 9.2mm, the second molybdenum copper electrode piece(7)Size be 2.0mm × 9.2mm;First molybdenum copper electricity
Pole piece(6)With the second molybdenum copper electrode piece(7)For molybdenum copper product, plating nickel on surface, nickel layer thickness is 5 μm~8.9 μm.
A kind of 3. TO cermets shell structure according to claim 1, it is characterised in that:The internal electrode(1)With
Outer electrode(2)Between connected mode for be electrically connected with;Copper post(12)It is 70A-100A by current capacity value scope.
A kind of 4. TO cermets shell structure according to claim 1, it is characterised in that:The rectangle iron-nickel alloy side
Frame(3)Close to end position is drawn, using local reduction's technology, increase itself and exit distance, ensure pressure-resistant same of product
When to solve shell dimension smaller with the larger contradiction of lead spacing.
A kind of 5. TO cermets shell structure according to claim 1, it is characterised in that:The first molybdenum copper electrode piece
(6)For chip weld zone, the second molybdenum copper electrode piece(7)The bonding region drawn for chip heavy current electrode, it is bonding a plurality of
Crude aluminum line, it is allowed to flow through high current.
A kind of 6. TO cermets shell structure according to claim 1, it is characterised in that:The rectangle iron-nickel alloy side
Frame(3), before sintering outer lead, by rectangle iron-nickel alloy frame(3)Bottom both sides carry out local reduction, and wall thickness is subtracted by 1.3mm
Thin to arrive 0.7mm, it is 4mm that length, which is thinned,.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201720633431.0U CN206834165U (en) | 2017-06-02 | 2017-06-02 | A kind of TO cermets shell structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201720633431.0U CN206834165U (en) | 2017-06-02 | 2017-06-02 | A kind of TO cermets shell structure |
Publications (1)
Publication Number | Publication Date |
---|---|
CN206834165U true CN206834165U (en) | 2018-01-02 |
Family
ID=60773286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201720633431.0U Active CN206834165U (en) | 2017-06-02 | 2017-06-02 | A kind of TO cermets shell structure |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN206834165U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107068620A (en) * | 2017-06-02 | 2017-08-18 | 朝阳无线电元件有限责任公司 | A kind of TO cermets shell structure |
CN112071806A (en) * | 2020-08-31 | 2020-12-11 | 中国电子科技集团公司第五十五研究所 | High-power metal ceramic packaging shell for large-size multi-chip circuit and preparation method thereof |
-
2017
- 2017-06-02 CN CN201720633431.0U patent/CN206834165U/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107068620A (en) * | 2017-06-02 | 2017-08-18 | 朝阳无线电元件有限责任公司 | A kind of TO cermets shell structure |
CN107068620B (en) * | 2017-06-02 | 2019-10-25 | 朝阳无线电元件有限责任公司 | A kind of TO metal ceramic tube shell structure |
CN112071806A (en) * | 2020-08-31 | 2020-12-11 | 中国电子科技集团公司第五十五研究所 | High-power metal ceramic packaging shell for large-size multi-chip circuit and preparation method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2018227655A1 (en) | Low parasitic inductance power module and double-sided heat-dissipation low parasitic inductance power module | |
CN205303452U (en) | Heat sink material of diamond copper | |
CN206834165U (en) | A kind of TO cermets shell structure | |
CN110429075B (en) | High-density multi-side pin exposed packaging structure and production method thereof | |
CN202695428U (en) | Insulated gate bipolar transistor (IGBT) power module | |
CN207165543U (en) | A kind of low stray inductance two-side radiation power model | |
CN102693969A (en) | Insulated gate bipolar translator (IGBT) power module | |
CN107068620A (en) | A kind of TO cermets shell structure | |
WO2019034036A1 (en) | Semiconductor encapsulation structure and semiconductor device | |
CN113658928A (en) | Vertical power terminal double-sided heat dissipation power module | |
CN204497239U (en) | Metallic packaging big current, high voltage, fast recovery diode | |
CN206931584U (en) | A kind of semiconductor power device metal shell | |
CN106960823A (en) | A kind of semiconductor power device metal shell | |
CN106098649A (en) | High-power surface mount elements and processing tool, manufacture method | |
CN105374806A (en) | Circular-group-arranged crimping power device packaging | |
CN104319206B (en) | Suspended sheet-metal electronic component and batch manufacturing method thereof | |
CN206789535U (en) | A kind of fan-out package structure of power electronic devices | |
US20220020910A1 (en) | Thermoelectric module | |
CN209282195U (en) | A kind of encapsulating structure of silicon carbide device | |
CN113053850A (en) | Power module packaging structure | |
CN208173593U (en) | Metal Packaging cascaded structure diode | |
CN112786567A (en) | Semiconductor power module and packaging method thereof | |
CN217933787U (en) | High-power rectifier | |
EP3863048A1 (en) | Package structures | |
CN211879373U (en) | Heat-dissipating semiconductor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: 122000 105, section 5, Wenhua Road, Longcheng District, Chaoyang City, Liaoning Province Patentee after: Chaoyang Microelectronics Technology Co., Ltd Address before: 122000 No. two, section 75, Chaoyang City, Liaoning, Xinhua Road Patentee before: CHAOYANG RADIO COMPONENTS Co.,Ltd. |
|
CP03 | Change of name, title or address |