CN211879373U - Heat-dissipating semiconductor - Google Patents

Abstract

The utility model discloses a radiating semiconductor, including the gallium arsenide shell, the top and the bottom fixed mounting of gallium arsenide shell have three pin, the welding mouth has been seted up to one side of pin, the inside fixed mounting of gallium arsenide shell has the base plate, the pin runs through the gallium arsenide shell and welds with the base plate, evenly distributed's logical groove is seted up to the inside of gallium arsenide shell, and the inside packing that leads to the groove has the heat-conducting layer, the bottom of heat-conducting layer and the surface contact of base plate, the top of heat-conducting layer runs through out the top of gallium arsenide shell, the surface of gallium arsenide shell has first heat dissipation layer through the bonding of first polyphenylene. The utility model discloses a set up the gallium arsenide shell and be used for protecting the base plate, be used for being connected base plate and external link through setting up the pin, make things convenient for the welding of pin and link through setting up the welding mouth, be used for handling information through setting up the base plate, thereby solved the problem that current semiconductor heat-sinking capability is low to lead to life to descend simultaneously.

Description

Heat-dissipating semiconductor

Technical Field

The utility model relates to the field of semiconductor technology, specifically be a radiating semiconductor.

Background

The semiconductor refers to a material with electric conductivity between a conductor and an insulator at normal temperature, and is applied in the fields of integrated circuits, consumer electronics, communication systems, photovoltaic power generation, lighting applications, high-power conversion, and the like, for example, a diode is a device made of a semiconductor, and the importance of the semiconductor is very great from the viewpoint of technology or economic development, so that most of electronic products such as computers, mobile phones, or digital audio recorders today have close relationship with the semiconductor, common semiconductor materials include silicon, germanium, gallium arsenide, and the like, and silicon is the most influential one of various semiconductor materials in commercial application.

The service life of the existing semiconductor is reduced due to poor heat dissipation of the existing semiconductor when the semiconductor is used, and the use requirement cannot be met.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a radiating semiconductor possesses good heat-sinking capability's advantage, thereby has solved the problem that current semiconductor heat-sinking capability is low to lead to life to descend.

In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides a radiating semiconductor, includes the gallium arsenide shell, the top and the bottom fixed mounting of gallium arsenide shell have three pin, the welding mouth has been seted up to one side of pin, the inside fixed mounting of gallium arsenide shell has the base plate, the pin runs through the gallium arsenide shell and welds with the base plate.

Preferably, through grooves which are uniformly distributed are formed in the gallium arsenide shell, a heat conduction layer is filled in the through grooves, the bottom of the heat conduction layer is in contact with the surface of the substrate, and the top of the heat conduction layer penetrates through the top of the gallium arsenide shell.

Preferably, a first heat dissipation layer is bonded on the surface of the gallium arsenide shell through first polyphenylene sulfide, and the inner cavity wall of the first heat dissipation layer is connected with one side of the heat conduction layer.

Preferably, the surface of the pin and the outer side of the gallium arsenide shell are provided with aluminum alloy, and the surface of the aluminum alloy is bonded with a second heat dissipation layer through second polyphenylene sulfide.

Preferably, the main component of the first heat dissipation layer is a nano-carbon heat dissipation film, the main component of the second heat dissipation layer is artificial graphite, the main material of the pins is copper, and the main material of the heat conduction layer is polyphthalamide and graphite.

Compared with the prior art, the beneficial effects of the utility model are as follows:

1. the utility model discloses a set up the gallium arsenide shell and be used for protecting the base plate, be used for being connected base plate and external link through setting up the pin, make things convenient for the welding of pin and link through setting up the welding mouth, be used for handling information through setting up the base plate, thereby solved the problem that current semiconductor heat-sinking capability is low to lead to life to descend simultaneously.

2. The utility model has the advantages that the heat conducting layer is arranged for discharging the heat generated by the substrate, thereby reducing the temperature of the substrate and prolonging the service life of the substrate, the first heat radiating layer is arranged for radiating the heat conducted out by the heat conducting layer, thereby prolonging the service life of the substrate, the first heat radiating layer is fixed with the gallium arsenide shell by arranging the first polyphenylene sulfide, meanwhile, the first polyphenylene sulfide has heat conductivity, thereby accelerating the heat dissipation, the aluminum alloy is arranged for increasing the heat radiation in the pins, the aluminum alloy is arranged for guiding the heat in the pins into the second heat radiating layer, the second heat radiating layer is arranged for radiating the heat in the pins, the production process of the nano carbon heat radiating film is simple, the price is low, the heat radiating efficiency is high, the heat is guided out by the matching between the polyphthalamide and the graphite, thereby prolonging the service life of the nano carbon heat radiating film, the artificial graphite has good electrical conductivity and low resistance, thereby reducing the generation of heat, and the thermal conductivity of the artificial graphite is good, thereby accelerating the dissipation of heat.

Drawings

FIG. 1 is a schematic structural view of the present invention;

FIG. 2 is a schematic cross-sectional structure of the present invention;

fig. 3 is a schematic diagram of the cross-sectional structure of the pin of the present invention.

In the figure: 1. a gallium arsenide housing; 2. a pin; 3. welding the opening; 4. a substrate; 5. a heat conductive layer; 6. a first heat dissipation layer; 7. an aluminum alloy; 8. and a second heat dissipation layer.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

In the description herein, it is to be understood that the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientations and positional relationships indicated in the drawings to facilitate the description of the patent and to simplify the description, but do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus are not to be considered limiting of the patent. In the description of the present application, it should be noted that unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "disposed" are to be construed broadly and can, for example, be fixedly connected, disposed, detachably connected, disposed, or integrally connected and disposed. The specific meaning of the above terms in this patent may be understood by those of ordinary skill in the art as appropriate.

Referring to fig. 1-3, a heat dissipating semiconductor includes a gallium arsenide case 1, three pins 2 fixedly mounted on the top and bottom of the gallium arsenide case 1, a solder port 3 formed on one side of each pin 2, a substrate 4 fixedly mounted inside the gallium arsenide case 1, the pins 2 penetrating through the gallium arsenide case 1 and being soldered to the substrate 4, the substrate 4 being protected by the gallium arsenide case 1, the substrate 4 being connected to an external connection terminal by the pins 2, the soldering of the pins 2 to the connection terminal being facilitated by the solder port 3, information being processed by the substrate 4, through-grooves uniformly distributed in the gallium arsenide case 1, a heat conducting layer 5 filled in the through-grooves, the bottom of the heat conducting layer 5 contacting the surface of the substrate 4, the top of the heat conducting layer 5 penetrating through the top of the gallium arsenide case 1, the heat conducting layer 5 being used for discharging heat generated by the substrate 4, thereby reducing the temperature of the substrate 4 and prolonging the service life of the substrate 4, the surface of the gallium arsenide shell 1 is bonded with a first heat dissipation layer 6 through first polyphenylene sulfide, the inner cavity wall of the first heat dissipation layer 6 is connected with one side of the heat conduction layer 5, the first heat dissipation layer 6 is arranged for dissipating heat conducted out by the heat conduction layer 5, thereby prolonging the service life of the substrate 4, the first heat dissipation layer 6 and the gallium arsenide shell 1 are fixed through the first polyphenylene sulfide, meanwhile, the first polyphenylene sulfide has heat conductivity, thereby accelerating the dissipation of heat, the surface of the pin 2 and the outer side of the gallium arsenide shell 1 are provided with aluminum alloy 7, the surface of the aluminum alloy 7 is bonded with a second heat dissipation layer 8 through second polyphenylene sulfide, the aluminum alloy 7 is arranged for increasing the dissipation of heat inside the pin 2, the aluminum alloy 7 is arranged for guiding the heat inside the pin 2 into the second heat dissipation layer 8, through setting up second heat dissipation layer 8 and being used for dispelling the heat of pin 2, the principal ingredients of first heat dissipation layer 6 is the nano-carbon heat dissipation membrane, the principal ingredients of second heat dissipation layer 8 is artificial graphite, the main material of pin 2 is copper, the main material of heat-conducting layer 5 is polyphthalamide and graphite, nano-carbon heat dissipation membrane production simple process is low in price and radiating efficiency is high, derive the heat through the cooperation between polyphthalamide and the graphite, thereby increase its life, good electric conductivity has, the resistance is low, thereby reduce thermal production, artificial graphite's heat conductivity is good, thereby accelerate thermal effluvium.

When the nano-carbon heat dissipation film is used, the heat conduction layer 5 is arranged for discharging heat generated by the substrate 4, so that the service life of the substrate 4 is prolonged, the first heat dissipation layer 6 is arranged for dissipating the heat conducted out by the heat conduction layer 5, so that the service life of the substrate 4 is prolonged, the first polyphenylene sulfide is arranged for fixing the first heat dissipation layer 6 and the gallium arsenide shell 1, the first polyphenylene sulfide has heat conductivity, so that the heat dissipation is accelerated, the aluminum alloy 7 is arranged for increasing the heat dissipation in the pins 2, the aluminum alloy 7 is arranged for guiding the heat in the pins 2 into the second heat dissipation layer 8, the second heat dissipation layer 8 is arranged for dissipating the heat in the pins 2, the nano-carbon heat dissipation film is simple in production process, low in price and high in heat dissipation efficiency, and the heat is conducted out through the matching between the polyphthalamide and the graphite, thereby increase its life, have good electric conductivity, the resistance is low to reduce the production of heat, the heat conductivity of artifical graphite is good, thereby the effluvium of heat is accelerated.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (8)

1. A heat-dissipating semiconductor comprising a gallium arsenide housing (1), characterized in that: the top and the bottom fixed mounting of gallium arsenide shell (1) have three pin (2), welding mouth (3) have been seted up to one side of pin (2), the inside fixed mounting of gallium arsenide shell (1) has base plate (4), pin (2) run through gallium arsenide shell (1) and with base plate (4) welding.

2. A heat dissipating semiconductor according to claim 1, wherein: the gallium arsenide shell is characterized in that through grooves which are uniformly distributed are formed in the gallium arsenide shell (1), a heat conduction layer (5) is filled in the through grooves, the bottom of the heat conduction layer (5) is in contact with the surface of the substrate (4), and the top of the heat conduction layer (5) penetrates through the top of the gallium arsenide shell (1).

3. A heat dissipating semiconductor according to claim 1, wherein: the surface of the gallium arsenide shell (1) is bonded with a first heat dissipation layer (6) through first polyphenylene sulfide, and the inner cavity wall of the first heat dissipation layer (6) is connected with one side of the heat conduction layer (5).

4. A heat dissipating semiconductor according to claim 1, wherein: the surface of the pin (2) is provided with an aluminum alloy (7) on the outer side of the gallium arsenide shell (1), and the surface of the aluminum alloy (7) is bonded with a second heat dissipation layer (8) through second polyphenylene sulfide.

5. A heat dissipating semiconductor according to claim 3, wherein: the main component of the first heat dissipation layer (6) is a nano carbon heat dissipation film.

6. The heat dissipating semiconductor of claim 4, wherein: the main component of the second heat dissipation layer (8) is artificial graphite.

7. A heat dissipating semiconductor according to claim 1, wherein: the main material of the pin (2) is copper.

8. A heat dissipating semiconductor according to claim 2, wherein: the heat conducting layer (5) is mainly made of polyphthalamide and graphite.

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