CN218333769U - Silicon carbide power semiconductor high-voltage device packaging structure - Google Patents
Silicon carbide power semiconductor high-voltage device packaging structure Download PDFInfo
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- CN218333769U CN218333769U CN202222229469.5U CN202222229469U CN218333769U CN 218333769 U CN218333769 U CN 218333769U CN 202222229469 U CN202222229469 U CN 202222229469U CN 218333769 U CN218333769 U CN 218333769U
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Abstract
The utility model discloses a silicon carbide power semiconductor high-voltage device's packaging structure relates to semiconductor high-voltage device encapsulation technical field. The packaging structure comprises a ceramic substrate, a silicon carbide power device, a metal positive electrode, a metal negative electrode and an external pin, wherein the top end of the ceramic substrate is fixed with the substrate and a packaging box, a gap is formed between the side surface of the substrate and the inner side of the packaging box, the top end of the substrate is provided with a heat-conducting metal sheet, the heat-conducting metal sheet is positioned at the bottom of the metal negative electrode, the top end of the packaging box is connected with a packaging cover through a packaging part, and the bottom end of the ceramic substrate is connected with a radiator through adhesive glue. The utility model discloses utilize high surface energy, the low melting point characteristic of metal particle under the nanometer yardstick to realize the low temperature low pressure sintering interconnection of carborundum power device and graphite alkene membrane, the nanometer silver interconnection layer of formation has good high temperature resistance ability and high heat conductivity ability to make the heat that carborundum power device gived off to obtain giving off as early as possible, realize that its inside metal device is in lower operational environment.
Description
Technical Field
The utility model relates to a semiconductor high voltage device encapsulates technical field, specifically is a silicon carbide power semiconductor high voltage device's packaging structure.
Background
The power semiconductor device is a semiconductor device for power processing, and comprises a power diode, a power switch device and a power integrated circuit, the power of the device and the power density of the device can be increased along with the improvement of the performance of an electronic device, so that the electronic device faces serious challenges in heat dissipation while the performance is improved.
At present, a large-power semiconductor device is generally and simply packaged and placed, the semiconductor device is fixed at the top end of a base, a lead is connected with a pin, and the semiconductor power device is sealed through a sealing cover.
Therefore, how to effectively radiate the internal working environment of the device to ensure that the temperature of the internal metal device working environment is lower and the reliability of the semiconductor high-voltage device during working is improved becomes a problem which needs to be solved urgently.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a silicon carbide power semiconductor high voltage device's packaging structure to solve the problem that proposes in the above-mentioned background art.
In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides a silicon carbide power semiconductor high voltage device's packaging structure, includes ceramic substrate, silicon carbide power device, metal positive electrode, metal negative electrode and outside pin, the ceramic substrate top is fixed with base plate and encapsulation box, and the inboard of base plate side and encapsulation box is formed with the clearance, and the base plate top is provided with the heat conduction sheetmetal, and the heat conduction sheetmetal is located the bottom of metal negative electrode, and encapsulation box top is connected with the encapsulation lid through the encapsulation portion, and the ceramic substrate bottom has the radiator through the bonding glue connection.
Preferably, the substrate comprises a plurality of graphene films fixed with the top end of the ceramic substrate, the top ends of the graphene films and the top end of the heat-conducting metal sheet are coated with nano-silver solder paste layers, and the top end of the heat-conducting metal sheet and the metal negative electrode are fixed through sintering the nano-silver solder paste layers.
Preferably, a plurality of socket holes are formed in the substrate, a plurality of heat-conducting metal columns are fixed at the bottom ends of the heat-conducting metal sheets, the heat-conducting metal columns are matched with the socket holes, and the bottom ends of the heat-conducting metal columns are in contact with the top end of the ceramic substrate.
Preferably, the packaging part comprises a socket arranged at the top end of the packaging box and a plugboard fixed at the bottom end of the packaging cover, the plugboard is spliced with the socket, and two glue injection holes are arranged at the top end of the packaging cover.
Preferably, the width of the socket slot is larger than that of the inserting plate, and rectangular through grooves communicated with each other are formed in the inserting plate and the plate body of the inner side plate of the packaging box.
Preferably, the encapsulation box is filled with encapsulation glue.
The utility model has the advantages that:
the packaging structure of the silicon carbide power semiconductor high-voltage device is provided with a graphene film, a nano silver soldering paste layer, a heat-conducting metal sheet and a heat-conducting metal column, heat generated by the silicon carbide power device is transmitted to a ceramic substrate and the substrate through the heat-conducting metal sheet and the heat-conducting metal column, and then heat dissipation is performed through a radiator, the substrate is composed of multiple layers of graphene films and nano silver soldering paste layers, due to the fact that graphene has very good heat conduction performance and nano particles have unique performance, the specific surface area is small, the surface curvature radius is small, the nano silver power device has a melting point and a welding temperature lower than those of conventional powder, low-temperature low-pressure sintering interconnection of the silicon carbide power device and the graphene film is achieved by means of the high surface energy and low melting point characteristics of the metal particles under the nanoscale, and the formed nano silver interconnection layer has excellent high-temperature resistance and high heat conduction capability, so that the heat dissipated by the silicon carbide power device can be dissipated as soon as possible, the internal metal device is in a lower working environment, and the use reliability of the silicon carbide power semiconductor high-voltage device is improved.
Drawings
FIG. 1 is an isometric view of the present invention after encapsulation;
fig. 2 is an exploded axial view of the present invention;
fig. 3 is an exploded bottom view of the present invention;
fig. 4 is a half-sectional view of the ceramic substrate and the package box of the present invention.
In the figure: 1. a ceramic substrate; 2. packaging the box; 201. a socket slot; 202. a rectangular through groove; 3. a package cover; 301. inserting plates; 302. injecting glue holes; 4. bonding glue; 5. a heat sink; 6. a silicon carbide power device; 601. a metal positive electrode; 602. a metal negative electrode; 7. a substrate; 701. a socket hole; 702. a graphene film; 703. a nano-silver solder paste layer; 8. a heat conductive metal sheet; 801. a thermally conductive metal post.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
It should be noted that, in the description of the present invention, the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate the orientation or positional relationship indicated based on the drawings, which is only for convenience of description of the present invention and simplification of description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
Further, it will be appreciated that the dimensions of the various elements shown in the figures are not drawn to scale, for ease of description, and that the thickness or width of some layers may be exaggerated relative to other layers, for example.
It should be noted that like reference numerals and letters refer to like items in the following figures, and thus, once an item is defined or illustrated in one figure, it will not need to be further discussed or illustrated in detail in the description of the following figure.
As shown in fig. 1-4, the utility model provides a technical solution: a packaging structure of a silicon carbide power semiconductor high-voltage device comprises a ceramic substrate 1, a silicon carbide power device 6, a metal positive electrode 601, a metal negative electrode 602 and external pins, wherein a substrate 7 and a packaging box 2 are fixed at the top end of the ceramic substrate 1, a gap is formed between the side surface of the substrate 7 and the inner side of the packaging box 2, the arrangement is to increase the contact area between packaging glue in the packaging box 2 and the side plate of the packaging box 2 and improve the packaging quality, a heat-conducting metal sheet 8 is arranged at the top end of the substrate 7, the heat-conducting metal sheet 8 can be made of copper or silver, in order to save the production cost, copper metal is preferably used in the embodiment, the substrate 7 comprises a plurality of graphene films 702 fixed to each other and fixed to the top end of the ceramic substrate 1, the structure of graphene is very stable, the carbon bond is only 1.42, the connection between carbon atoms in the graphene is very flexible, when external force is applied to the graphene, the carbon atom surfaces can be bent and deformed, so that the carbon atoms do not need to be rearranged to adapt to external force, the structure is kept stable, the excellent heat-conducting lattice structure enables the graphene to have the top ends of the graphene films 702 and the metal sheets 8, the metal sheets 703 and the silver sheets are welded to be coated with nano-conducting metal sheets 703 nanometer silver sheets and fixed through sintering, and the metal sheets 703 nanometer silver sheets.
The nano silver particles have unique performance, the specific surface area is small, the surface curvature radius is small, the characteristic endows the nano silver particles with lower melting point and welding temperature than conventional powder, the low-temperature and low-pressure sintering interconnection of the silicon carbide power device 6 and the graphene film 702 is realized by utilizing the characteristics of high surface energy and low melting point of the metal particles under the nanoscale, the formed nano silver interconnection layer has excellent high temperature resistance and high heat conductivity, the nano silver interconnection layer is suitable for the packaging requirement of the silicon carbide power device 6, the performance of a power electronic system and the operation reliability of the silicon carbide power device 6 are improved, the heat conducting metal sheet 8 is positioned at the bottom of the metal negative electrode 602, the packaging cover 3 is connected to the top end of the packaging box 2 through a packaging part, the radiator 5 is bonded to the bottom end of the ceramic substrate 1 through the bonding glue 4, and the radiator 5 can also be made of a ceramic substrate with better heat dissipation performance.
In order to further improve the heat dissipation effect of the silicon carbide power semiconductor high-voltage device, a plurality of socket holes 701 are formed in the substrate 7, a plurality of heat-conducting metal columns 801 are fixed to the bottom ends of the heat-conducting metal sheets 8, the heat-conducting metal columns 801 are matched with the socket holes 701, it can be known that the bottom ends of the heat-conducting metal columns 801 are in contact with the top end of the ceramic substrate 1, heat generated by the silicon carbide power device 6 is transmitted to the ceramic substrate 1 and the substrate 7 through the heat-conducting metal sheets 8 and the heat-conducting metal columns 801, and then heat dissipation is carried out through the heat sink 5.
In order to ensure the smooth implementation of the scheme, it is necessary to know that the encapsulation portion includes a socket 201 opened at the top end of the encapsulation box 2 and an insert plate 301 fixed at the bottom end of the encapsulation cover 3, and the insert plate 301 and the socket 201 are inserted into each other, and two glue injection holes 302 are formed at the top end of the encapsulation cover 3, and it can be understood that when one glue injection hole 302 is selected as a filling hole, the other is a vent hole, so that the encapsulation glue can be fully filled in the encapsulation box 2, and the encapsulation glue is poured in the encapsulation box 2, and the encapsulation glue is preferably epoxy resin.
In order to enhance the connection strength between the enclosure box 2 and the enclosure cover 3, in another embodiment, the width of the socket 201 is greater than the width of the board 301, and the board bodies of the board 301 and the inner side plate of the enclosure box 2 are both provided with rectangular through grooves 202 which are communicated with each other, so that the contact area between the epoxy resin and the board 301 is increased, and the firmness of the encapsulation is improved.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. The utility model provides a silicon carbide power semiconductor high voltage device's packaging structure, includes ceramic substrate (1), silicon carbide power device (6), metal positive electrode (601), metal negative electrode (602) and external pin, its characterized in that: the ceramic substrate packaging structure is characterized in that a substrate (7) and a packaging box (2) are fixed at the top end of the ceramic substrate (1), a gap is formed between the side face of the substrate (7) and the inner side of the packaging box (2), a heat-conducting metal sheet (8) is arranged at the top end of the substrate (7), the heat-conducting metal sheet (8) is located at the bottom of a metal negative electrode (602), a packaging cover (3) is connected to the top end of the packaging box (2) through a packaging part, and a radiator (5) is bonded to the bottom end of the ceramic substrate (1) through bonding glue (4).
2. The packaging structure of the silicon carbide power semiconductor high-voltage device according to claim 1, wherein: the substrate (7) comprises a plurality of graphene films (702) fixed with each other and fixed with the top end of the ceramic substrate (1), the top ends of the graphene films (702) and the top ends of the heat-conducting metal sheets (8) are respectively coated with a nano-silver soldering paste layer (703), and the top ends of the heat-conducting metal sheets (8) and the metal negative electrodes (602) are fixed through sintering the nano-silver soldering paste layers (703).
3. The packaging structure of the silicon carbide power semiconductor high-voltage device according to claim 1, wherein: the ceramic substrate is characterized in that a plurality of socket holes (701) are formed in the substrate (7), a plurality of heat-conducting metal columns (801) are fixed at the bottom ends of the heat-conducting metal sheets (8), the heat-conducting metal columns (801) are matched with the socket holes (701), and the bottom ends of the heat-conducting metal columns (801) are in contact with the top end of the ceramic substrate (1).
4. The packaging structure of the silicon carbide power semiconductor high-voltage device according to claim 1, wherein: the packaging part comprises a socket groove (201) formed in the top end of the packaging box (2) and a plug board (301) fixed at the bottom end of the packaging cover (3), the plug board (301) is spliced with the socket groove (201), and two glue injection holes (302) are formed in the top end of the packaging cover (3).
5. The structure for packaging a silicon carbide power semiconductor high-voltage device according to claim 4, wherein: the width of the socket groove (201) is larger than that of the inserting plate (301), and the rectangular through grooves (202) communicated with each other are formed in the plate bodies of the inserting plate (301) and the inner side plate of the packaging box (2).
6. The structure for packaging a silicon carbide power semiconductor high-voltage device according to claim 1, wherein: and the packaging box (2) is internally poured with packaging glue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222229469.5U CN218333769U (en) | 2022-08-23 | 2022-08-23 | Silicon carbide power semiconductor high-voltage device packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202222229469.5U CN218333769U (en) | 2022-08-23 | 2022-08-23 | Silicon carbide power semiconductor high-voltage device packaging structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116113191A (en) * | 2023-03-17 | 2023-05-12 | 惠州市天睿电子有限公司 | Circuit board component packaging structure |
| CN116113191B (en) * | 2023-03-17 | 2024-07-16 | 惠州市天睿电子有限公司 | Circuit board component packaging structure |
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2022
- 2022-08-23 CN CN202222229469.5U patent/CN218333769U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116113191A (en) * | 2023-03-17 | 2023-05-12 | 惠州市天睿电子有限公司 | Circuit board component packaging structure |
| CN116113191B (en) * | 2023-03-17 | 2024-07-16 | 惠州市天睿电子有限公司 | Circuit board component packaging structure |
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