CN206931584U - A kind of semiconductor power device metal shell - Google Patents
A kind of semiconductor power device metal shell Download PDFInfo
- Publication number
- CN206931584U CN206931584U CN201720482073.8U CN201720482073U CN206931584U CN 206931584 U CN206931584 U CN 206931584U CN 201720482073 U CN201720482073 U CN 201720482073U CN 206931584 U CN206931584 U CN 206931584U
- Authority
- CN
- China
- Prior art keywords
- lead
- steel sheel
- sealing
- bottom plate
- tungsten copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
It the utility model is related to a kind of novel power semiconductor, more particularly to a kind of semiconductor power device metal shell, tungsten copper bottom plate is arranged at steel sheel bottom, one end of tungsten copper bottom plate is extended to outside steel sheel, through hole is offered on the part extended, inside steel sheel, beryllium oxide piece is provided with tungsten copper bottom plate, molybdenum sheet is provided with beryllium oxide piece；There are three sealing-in holes on steel sheel, lead is set respectively in three sealing-in holes, is connected between lead and sealing-in hole by insulator；The both ends of lead are respectively inner and outer end, outer end be located at steel sheel it is outside, it is inner be located inside steel sheel, the inner is flat structure, and inner width is more than sealing-in bore dia；There is connecting hole on the inner of wherein one lead, be fixed with binding post in connecting hole, binding post is connected with molybdenum sheet.The utility model enhances shell performance, is adapted to carrying high current, the high heat conduction semiconductor packages of high-power, high back-pressure to use.
Description
Technical field
A kind of novel power semiconductor is the utility model is related to, more particularly to a kind of semiconductor power device metal
Shell.
Background technology
In the technology of analog circuit and Digital Circuit Control switch, generally use Metal-Oxide Semiconductor field-effect
Transistor controls as electric signal.In order to which the chip of transistor is imported into circuit system, it is desirable to provide a kind of specific
Package casing.
The main effect of the package casing of power management integrated circuits device at present：Mechanical support, sealing protection, electric signal
Connection, signal shielding, radiating, especially shielded in radiating, electromagnetic signal particularly important in two key elements.Due to bearing metal-
The chip size of oxide semiconductor field effect transistor is small, and shell dimension is small but needs inner space big, and needs to have radiating
And ensureing that electromagnetic signal caused by internal circuit does not influence the effect of external circuit, current existing technology is difficult to accomplish thermal diffusivity
Well the strong package casing of shielding properties can be had concurrently simultaneously.
Utility model content
For above-mentioned technical problem, the utility model provides a kind of power device metal shell, the envelope for transistor
Dress.
The utility model is in order to solve the above technical problems, adopt the following technical scheme that：
A kind of semiconductor power device metal shell, including base and lead；
Described base includes the steel sheel of frame shape, and tungsten copper bottom plate is arranged at steel sheel bottom, and one end of tungsten copper bottom plate extends to
Outside steel sheel, through hole is offered on the part extended, inside steel sheel, beryllium oxide is provided with described tungsten copper bottom plate
Piece, molybdenum sheet is provided with beryllium oxide piece；
There are three sealing-in holes on steel sheel, lead is set respectively in three sealing-in holes, by exhausted between lead and sealing-in hole
Edge is connected；The both ends of described lead are respectively inner and outer end, and described outer end is located at that steel sheel is outside, inner is located at
Inside steel sheel, described the inner is flat structure, and inner width is more than sealing-in bore dia；On the inner of wherein one lead
Also connecting hole, binding post is fixed with connecting hole, described binding post is connected with molybdenum sheet.
The top of steel sheel is provided with encapsulation cover plate, and encapsulation cover plate, steel sheel and tungsten copper bottom plate form a seal cavity.
The utility model welds sintering process design technology by improving existing single metal material, using 10# steel matrix structure,
The multiple materials such as tungsten copper bottom plate, metal lead wire, ceramic insulator, BeO, Mo piece make shell, solve BeO and metal Mo welding
With BeO problem of Cracking, product hermeticity energy is improved.BeO, Mo piece are welded in housing, can effectively reduce becoming for microwave line
Effect is taken, reduces the decay of microwave, so as to ensure the good signal transmission of chip.By drawing to 3 cylindrical straights of enclosure
Line is improved to flat structure, is easy to be bonded, and increases inner space, strengthens heat dispersion.
A kind of semiconductor power device metal shell provided by the utility model, product electric conductivity, thermal diffusivity, insulation
Technical merit is in a leading position ground to the index such as property, bond strength, anti-oxidant, anticorrosive, antifatigue, potting performance at home
Position, and cost is lower than external.Not only solve the problems, such as radiating and signal shielding simultaneously, more enhance shell performance, be adapted to carrying
High current, high-power, high back-pressure, high frequency, high speed, high sensitivity, the high heat conduction semiconductor packages of low noise are used.
Brief description of the drawings
Fig. 1 is cross-sectional view of the present utility model；
Fig. 2 is overlooking the structure diagram of the present utility model.
Embodiment
Specific embodiment of the present utility model is described with reference to the drawings.
As depicted in figs. 1 and 2, a kind of semiconductor power device metal shell, including base and lead；
Described base includes the steel sheel 1 of frame shape, and tungsten copper bottom plate 2 is arranged at the bottom of steel sheel 1, and one end of tungsten copper bottom plate 2 is prolonged
Extend outside steel sheel 1, through hole is offered on the part extended, inside steel sheel 1, be provided with described tungsten copper bottom plate 1
Beryllium oxide piece 3, molybdenum sheet 4 is provided with beryllium oxide piece 3；
There are three sealing-in holes on steel sheel 1, lead 5 is set respectively in three sealing-in holes, passed through between lead 5 and sealing-in hole
Insulator 6 is connected；The both ends of described lead 5 are respectively inner and outer end, and it is outside, interior that described outer end is located at steel sheel 1
End is inside steel sheel 1, and described the inner is flat structure, and inner width is more than sealing-in bore dia；A wherein lead
The inner on also have connecting hole, be fixed with binding post 7 in connecting hole, described binding post 7 is connected with molybdenum sheet 4.
The top of steel sheel 1 is provided with encapsulation cover plate, and encapsulation cover plate, steel sheel 1 and tungsten copper bottom plate 2 form an annular seal space
Body.
A kind of semiconductor power device employs multiple material with metal shell, and steel sheel 1 is No. 10 steel, lead 5
For that can cut down（4J29）Copper-clad lead.The encapsulation requirement of power semiconductor of new generation can be met, and adapt to mass produce.
By improving pin configuration, lead 5 is welded by drilling technique with binding post 7 to flatten lead so that inner space increases
Greatly, increase heat flow space and carry the space of chip, inside is using beryllium oxide piece 3 and the welding technique of molybdenum sheet 4 enhancing product
Heat conductivity and shielding properties, tungsten copper bottom plate 2 use oxygen-free copper, lift shell heat dispersion；Binding post 7 can cut down conjunction using 4J29
Gold, insulator 6 use Al2O3Ceramic insulator, meet insulaion resistance, sealing property requirement, insulaion resistance with the welding of lead 5：
500V DC, the Ω of R >=1 × 10 10；Leakage rate：≤1×10-3Pa·cm3/s。
Metal shell preparation technology：
Steel sheel 1 is connected using high with tungsten copper bottom plate 2, beryllium oxide piece 3, molybdenum sheet 4, insulator 6, binding post 7, lead 5
Temperature sintering, soldering connection are in one.Encapsulation cover plate is welded above the cavity of steel sheel 1 to form seal cavity, during use, sealed
Capping plate and the cavity sealing mode of steel sheel 1 are parallel seam welding.
Wherein insulator 6Al2O3Ceramic material and the sealed welding technology of lead 5：Product has compared with insulating requirements and compared with high sealing
Performance, insulaion resistance：500V DC, the Ω of R >=1 × 10 10；Leakage rate：≤1×10-3Pa·cm3/s；Use Al2O3Ceramics system
Be made insulator, substitute glass insulator, respectively with 10# steel matrix, the welding of copper-clad lead can be cut down, to meet insulaion resistance, close
Sealing property.
Wherein insulator 6 is Al2O3The welding technique of ceramic insulator and steel sheel 1：
Because the coefficient of expansion gap of different materials is larger, ceramic insulator can not use steel of the conventional method directly with metal
Housing 1 welds.Take and first insulator 6 and lead 5 are sintered on the kovar alloy material of expansion coefficient similar therewith, be made
Cross and use closure, then with end grinding jig, the termination of insulator lead is ground, be allowed to meet product size and flatness will
Ask, then transition sealing part and steel sheel 1 be welded in and are made into integration ceramic insulator, solve lead bias, insulator cracking,
The problem of lead size is inconsistent, ensure that sealing property.
Wherein beryllium oxide piece 3 and the welding technique of molybdenum sheet 4：
BeO has splendid heat-conductive characteristic and insulating properties, and dielectric constant is low, but BeO and Metal Material Welding
BeO is stressed afterwards, is easily ftractureed, so as to cause gas leakage.Solve BeO and metal Mo welding for effective measures and BeO ftractures
Problem, welded again with molybdenum sheet 4 after the metallization of the upper and lower surface of beryllium oxide piece 3.BeO is effectively ensured housing with metal Mo uses and dissipated
External interference electric wave is blocked in the use of heat, particularly molybdenum sheet, guarantee.
Flatten drilling technique in wherein the inner of lead 5：
The product shell lead is diameter 1mm 4J29 copper clad materials, and termination requires flat, and it is small to bore one in flat horizontal surface
Hole, flat horizontal surface need to be parallel with bottom plate, drilled after first lead ends are flattened, then lead is soldered on housing, solved in housing
Lead ends punch problem.
Claims (2)
1. a kind of semiconductor power device metal shell, including base and lead；Characterized in that, described base includes frame
Tungsten copper bottom plate is arranged at the steel sheel of shape, steel sheel bottom, and one end of tungsten copper bottom plate is extended to outside steel sheel, is opened on the part extended
Provided with through hole, inside steel sheel, beryllium oxide piece is provided with described tungsten copper bottom plate, molybdenum sheet is provided with beryllium oxide piece；Steel
There are three sealing-in holes on housing, lead is set respectively in three sealing-in holes, is connected between lead and sealing-in hole by insulator；
The both ends of described lead are respectively inner and outer end, described outer end be located at steel sheel it is outside, it is inner be located inside steel sheel,
Described the inner is flat structure, and inner width is more than sealing-in bore dia；There is connecting hole on the inner of wherein one lead,
Binding post is fixed with connecting hole, described binding post is connected with molybdenum sheet.
A kind of 2. semiconductor power device metal shell according to claim 1, it is characterised in that the top of steel sheel
Provided with encapsulation cover plate, encapsulation cover plate, steel sheel and tungsten copper bottom plate form a seal cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720482073.8U CN206931584U (en) | 2017-05-03 | 2017-05-03 | A kind of semiconductor power device metal shell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720482073.8U CN206931584U (en) | 2017-05-03 | 2017-05-03 | A kind of semiconductor power device metal shell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206931584U true CN206931584U (en) | 2018-01-26 |
Family
ID=61352032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720482073.8U Expired - Fee Related CN206931584U (en) | 2017-05-03 | 2017-05-03 | A kind of semiconductor power device metal shell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206931584U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106960823A (en) * | 2017-05-03 | 2017-07-18 | 宜兴市吉泰电子有限公司 | A kind of semiconductor power device metal shell |
| CN109936932A (en) * | 2019-03-08 | 2019-06-25 | 河北中瓷电子科技有限公司 | Ceramics, glass and metal ternary encapsulating package and preparation method |
-
2017
- 2017-05-03 CN CN201720482073.8U patent/CN206931584U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106960823A (en) * | 2017-05-03 | 2017-07-18 | 宜兴市吉泰电子有限公司 | A kind of semiconductor power device metal shell |
| CN109936932A (en) * | 2019-03-08 | 2019-06-25 | 河北中瓷电子科技有限公司 | Ceramics, glass and metal ternary encapsulating package and preparation method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180126 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |