CN112420678B - High-heat-dissipation digital-analog integrated packaging structure and manufacturing method thereof - Google Patents

High-heat-dissipation digital-analog integrated packaging structure and manufacturing method thereof Download PDF

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CN112420678B
CN112420678B CN202011304110.9A CN202011304110A CN112420678B CN 112420678 B CN112420678 B CN 112420678B CN 202011304110 A CN202011304110 A CN 202011304110A CN 112420678 B CN112420678 B CN 112420678B
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analog
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composite substrate
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CN112420678A (en
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董东
王辉
李慧
潘玉华
陆吟泉
庞婷
张平升
代晓丽
贾斌
朱晨俊
叶永贵
王强
何琼兰
文俊凌
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CETC 29 Research Institute
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3672Foil-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention relates to the technical field of electronic packaging, and discloses a high-heat-dissipation digital-analog integrated packaging structure and a manufacturing method thereof. The packaging structure provided by the invention has higher air tightness, and simultaneously improves the integration density and the heat dissipation efficiency of the device.

Description

一种高散热数模一体集成封装结构及其制作方法A high heat dissipation digital-analog integrated package structure and manufacturing method thereof

技术领域technical field

本发明涉及电子封装技术领域,尤其涉及一种高散热数模一体集成封装结构及其制作方法。The invention relates to the technical field of electronic packaging, in particular to a high heat dissipation digital-analog integrated packaging structure and a manufacturing method thereof.

背景技术Background technique

数模一体多功能高密度集成、大功率散热、高可靠性以及低成本对于提高微波组件产品的竞争力具有重要意义。目前高可靠微波组件产品常用的封装形式主要有基于金属盒体的混合电路集成结构以及基于多功能陶瓷基板的一体化封装结构,其中混合电路集成结构虽然具有可靠性高、集成灵活等特点,但通常集成密度相对较低,且装配操作复杂;而陶瓷一体化封装结构虽然以其多层灵活布线、集成密度高等特点得到了广泛应用,但由于结构强度以及材料热膨胀系数限制,难以实现大尺寸封装,与上级产品间的结构兼容性也较差。Digital-analog integrated multi-function high-density integration, high-power heat dissipation, high reliability and low cost are of great significance for improving the competitiveness of microwave component products. At present, the commonly used packaging forms of high-reliability microwave component products mainly include a metal box-based hybrid circuit integrated structure and a multi-functional ceramic substrate-based integrated packaging structure. Although the hybrid circuit integrated structure has the characteristics of high reliability and flexible integration, but Usually the integration density is relatively low, and the assembly operation is complicated; although the ceramic integrated packaging structure has been widely used due to its multi-layer flexible wiring and high integration density, it is difficult to achieve large-scale packaging due to structural strength and material thermal expansion coefficient constraints. , and the structural compatibility with the superior product is also poor.

基于有机PCB板的封装结构以其低成本在通讯电子领域得到广泛青睐,其中金属基PCB以其高散热性被广泛用于汽车电子、电源设备等产品,但其封装结构均不具备气密高可靠性。The packaging structure based on organic PCB board is widely favored in the field of communication electronics due to its low cost. Among them, metal-based PCB is widely used in automotive electronics, power equipment and other products due to its high heat dissipation, but its packaging structure does not have high airtightness. reliability.

发明内容SUMMARY OF THE INVENTION

本发明所要解决的技术问题是:针对上述存在的问题,提供了一种高散热数模一体集成封装结构及其制作方法,本发明提供的封装结构将数模复合基板与金属基板进行一体化集成加工形成具备高散热的多功能复合基板,将复合基板的金属基与装配有低频连接器和射频连接器的金属围框之间进行焊接,再通过金属围框与盖板间的焊接形成气密封装结构,封装内部贴装数字封装器件、射频封装器件以及低功耗芯片、大功率芯片,射频电路通道间通过金属围框隔筋结构实现电磁隔离。The technical problem to be solved by the present invention is: in view of the above problems, a high heat dissipation digital-analog integrated packaging structure and a manufacturing method thereof are provided. The packaging structure provided by the present invention integrates a digital-analog composite substrate and a metal substrate. Process to form a multi-functional composite substrate with high heat dissipation, weld the metal base of the composite substrate and the metal enclosure equipped with the low frequency connector and the radio frequency connector, and then form a hermetic seal by welding between the metal enclosure and the cover plate The packaging structure is to mount digital packaging devices, RF packaging devices, and low-power chips and high-power chips inside the package. Electromagnetic isolation is achieved between the RF circuit channels through the metal enclosure rib structure.

本发明采用的技术方案如下:一种高散热数模一体集成封装结构,包括:多功能数模复合基板、金属围框和盖板,所述多功能数模复合基板、金属围框和盖板三者之间配合安装,构成一个密封腔体;所述多功能数模复合基板包括数字介质板、微波介质板和金属基板,所述数字介质板和微波介质板根据电路需要叠合在所述金属基板上形成数模复合电路;The technical scheme adopted in the present invention is as follows: a high heat dissipation digital-analog integrated package structure, comprising: a multifunctional digital-analog composite substrate, a metal enclosure and a cover, the multifunctional digital-analog composite substrate, the metal enclosure and the cover The three are installed together to form a sealed cavity; the multifunctional digital-analog composite substrate includes a digital medium plate, a microwave medium plate and a metal substrate, and the digital medium plate and the microwave medium plate are superimposed on the A digital-analog composite circuit is formed on the metal substrate;

所述金属围框的侧壁上设置有低频连接器和射频连接器;A low frequency connector and a radio frequency connector are arranged on the side wall of the metal enclosure;

所述多功能数模复合基板上安装有封装器件和功率芯片,所述功率芯片连接到所述金属基板上。A packaged device and a power chip are mounted on the multifunctional digital-analog composite substrate, and the power chip is connected to the metal substrate.

进一步的,所述金属基板为铜基板或铝基板。Further, the metal substrate is a copper substrate or an aluminum substrate.

进一步的,所述多功能数模复合基板的表面镀涂有镍金或镍钯金。Further, the surface of the multifunctional digital-analog composite substrate is plated with nickel-gold or nickel-palladium-gold.

进一步的,所述金属围框材料为铝合金、铜、不锈钢、硅铝中的任意一种。Further, the metal enclosure material is any one of aluminum alloy, copper, stainless steel, and silicon aluminum.

进一步的,所述金属围框表面镀涂镍、镍金或镍钯金镀层。Further, the surface of the metal enclosure is plated with nickel, nickel-gold or nickel-palladium-gold plating.

本发明还提供一种高散热数模一体集成封装结构的制作方法,包括:The present invention also provides a method for manufacturing a high heat dissipation digital-analog integrated package structure, comprising:

将数字介质板、微波介质板与金属基板进行一体化集成,制作成多功能数模复合基板,数字介质板和微波介质板根据电路需要叠合在所述金属基板上形成数模复合电路;The digital medium plate, the microwave medium plate and the metal substrate are integrated and integrated to form a multi-functional digital-analog composite substrate, and the digital medium plate and the microwave medium plate are superimposed on the metal substrate according to circuit requirements to form a digital-analog composite circuit;

将低频连接器和射频连接器装配到金属围框侧壁上,得到具有输入输出结构的金属围框;Assembling the low frequency connector and the radio frequency connector on the side wall of the metal enclosure to obtain a metal enclosure with an input and output structure;

将封装器件和金属围框焊接到所述多功能数模复合基板上;welding the packaged device and the metal enclosure to the multifunctional digital-analog composite substrate;

采用微组装工艺将裸芯片装配到已焊接有金属围框的数模复合基板上,其中,将裸芯片中的功率芯片贴装到所述多功能数模复合基板的金属基板上;The bare chip is assembled on the digital-analog composite substrate to which the metal enclosure has been welded by using a micro-assembly process, wherein the power chip in the bare chip is mounted on the metal substrate of the multi-functional digital-analog composite substrate;

将盖板与所述金属围框进行配合封装。The cover plate and the metal enclosure are matched and packaged.

进一步的,所述数字介质板、微波介质板与金属基板通过一体化层压的方式制作成多功能数模复合基板。Further, the digital medium plate, the microwave medium plate and the metal substrate are made into a multi-functional digital-analog composite substrate by means of integrated lamination.

进一步的,通过焊接工艺或玻璃烧结工艺将低频连接器和射频连接器装配到所述金属围框的侧壁上。Further, the low frequency connector and the radio frequency connector are assembled on the side wall of the metal enclosure through a welding process or a glass sintering process.

进一步的,盖板与金属围框之间采用激光封焊、平行封焊或钎焊的方式封装。Further, the cover plate and the metal enclosure are packaged by means of laser sealing, parallel sealing or brazing.

进一步的,在将封装器件焊接到多功能数模复合基板的步骤中,通过采用表面贴装工艺将封装器件焊接到多功能数模复合基板的表面上。Further, in the step of soldering the packaged device to the multifunctional digital-analog composite substrate, the packaged device is soldered to the surface of the multifunctional digital-analog composite substrate by using a surface mount process.

与现有技术相比,采用上述技术方案的有益效果为:Compared with the prior art, the beneficial effects of adopting the above technical solution are:

(1)通过数模复合基板的金属基部分与金属围框之间的焊接,形成高可靠气密封装结构,提高产品的可靠性。(1) Through the welding between the metal base part of the digital-analog composite substrate and the metal surrounding frame, a highly reliable airtight packaging structure is formed to improve the reliability of the product.

(2)采用表面贴装和微组装混合装配工艺将数字封装器件、射频封装器件以及裸芯片集成装配到数模复合多功能基板上,提高了集成密度。(2) The digital packaged device, the radio frequency packaged device and the bare chip are integrated and assembled on the digital-analog composite multi-functional substrate by the surface mount and micro-assembly hybrid assembly process, which improves the integration density.

(3)功率芯片直接贴装在数模复合基板金属基上,提高了散热效率。(3) The power chip is directly mounted on the metal base of the digital-analog composite substrate, which improves the heat dissipation efficiency.

(4)利用金属基复合基板的强度及材料特性,可有效解决陶瓷基板封装尺寸限制以及与上级产品结构兼容性问题。(4) Utilizing the strength and material properties of the metal matrix composite substrate, it can effectively solve the packaging size limitation of the ceramic substrate and the structural compatibility with the superior product.

附图说明Description of drawings

图1是数模一体气密封装结构示意图。Figure 1 is a schematic diagram of the digital-analog integrated hermetic packaging structure.

图2金属基数模复合基板结构示意图。FIG. 2 is a schematic diagram of the structure of a metal-based digital-mode composite substrate.

图3是金属围框装配连接器结构示意图。FIG. 3 is a schematic structural diagram of a metal enclosure assembly connector.

图4是数模复合基板焊接封装器件和金属围框结构示意图。FIG. 4 is a schematic diagram of the structure of a digital-analog composite substrate soldering package device and a metal enclosure.

附图标记:1—金属基,2—数模复合介质电路层,3—金属围框,4—低频连接器,5—射频连接器,6—金属基数模复合基板,7—数字封装器件,8—射频封装器件,9—大功率芯片,10—低功耗芯片,11—盖板。Reference signs: 1—metal base, 2—digital-analog composite dielectric circuit layer, 3—metal enclosure, 4—low frequency connector, 5—radio frequency connector, 6—metal base digital-analog composite substrate, 7—digital package device, 8—RF packaged device, 9—high power chip, 10—low power consumption chip, 11—cover plate.

具体实施方式Detailed ways

下面结合附图对本发明做进一步描述。The present invention will be further described below with reference to the accompanying drawings.

如图1所示,本发明实施例提供一种高散热数模一体集成封装结构,主要由多功能数模复合基板、金属围框和盖板三部分组成。金属围框焊接在多功能数模复合基板上,盖板采用激光封焊、平行缝焊或钎焊方式封装在金属围框上,三者组成一个密封空腔。As shown in FIG. 1 , an embodiment of the present invention provides a high heat dissipation digital-analog integrated package structure, which is mainly composed of three parts: a multi-functional digital-analog composite substrate, a metal enclosure and a cover plate. The metal enclosure is welded on the multi-functional digital-analog composite substrate, and the cover plate is encapsulated on the metal enclosure by laser sealing, parallel seam welding or brazing, and the three form a sealed cavity.

其中,多功能复合基板由数字介质板、微波介质板和金属基板三者组成,数字介质板和微波介质板叠合在金属基板上形成数模复合电路。金属围框是焊接在多功能复合基板中的金属基板上的。多功能数模复合基板上安装有封装器件和功率芯片,其中,功率芯片还连接到所述金属基板上。Among them, the multifunctional composite substrate is composed of a digital medium plate, a microwave medium plate and a metal substrate, and the digital medium plate and the microwave medium plate are superimposed on the metal substrate to form a digital-analog composite circuit. The metal enclosure is welded on the metal substrate in the multifunctional composite substrate. A packaged device and a power chip are mounted on the multifunctional digital-analog composite substrate, wherein the power chip is also connected to the metal substrate.

其中,金属围框的侧壁上装配有低频连接器和射频连接器,用于实现封装结构电源加电以及封装结构内部与外部的低频/高频信号的传输。Wherein, the side wall of the metal enclosure is equipped with low frequency connectors and radio frequency connectors, which are used to realize the power supply of the package structure and the transmission of low frequency/high frequency signals inside and outside the package structure.

优选地,在本实施例中,所述金属基板为铜基板或铝基板,厚度优选500um以上。Preferably, in this embodiment, the metal substrate is a copper substrate or an aluminum substrate, and the thickness is preferably more than 500um.

优选地,在本实施例中,所述多功能数模复合基板的表面镀涂有镍金或镍钯金。Preferably, in this embodiment, the surface of the multifunctional digital-analog composite substrate is plated with nickel-gold or nickel-palladium-gold.

优选地,在本实施例中,金属围框材料为铝合金、铜、不锈钢、硅铝中的任意一种。Preferably, in this embodiment, the metal enclosure material is any one of aluminum alloy, copper, stainless steel, and silicon aluminum.

优选地,在本实施例中,金属围框表面镀涂镍、镍金或镍钯金镀层。Preferably, in this embodiment, the surface of the metal enclosure is plated with nickel, nickel-gold or nickel-palladium-gold plating.

在本发明实施例中还提供一种高散热数模一体集成封装结构的制作方法,包括如下步骤:An embodiment of the present invention also provides a method for manufacturing a high heat dissipation digital-analog integrated package structure, comprising the following steps:

(1)制作高散热的多功能数模复合基板。通过将数字介质板、微波介质板与金属基板进行一体化层压制作成具有高散热的多功能数模复合基板,数字介质板和微波介质板根据电路需要叠合在所述金属基板上形成数模复合电路,同时,与金属围框气密焊接位置以及功率芯片贴装位置的金属基裸露。(1) Making a multi-functional digital-analog composite substrate with high heat dissipation. A multi-functional digital-analog composite substrate with high heat dissipation is made by integrating the digital medium board, the microwave medium board and the metal substrate. The composite circuit, at the same time, is exposed to the metal base at the airtight welding position with the metal enclosure and the power chip mounting position.

具体的,在本实施例中,数模复合基板中金属基板为铜基板,厚度800um。数模复合基板表面镀涂镍钯金。Specifically, in this embodiment, the metal substrate in the digital-analog composite substrate is a copper substrate with a thickness of 800um. The surface of the digital-analog composite substrate is plated with nickel-palladium-gold.

(2)制作具备输入输出结构的金属围框。通过焊接工艺或玻璃烧结工艺将低频连接器、射频连接器装配到金属围框侧壁上。(2) Fabrication of a metal enclosure with an input and output structure. The low frequency connector and the radio frequency connector are assembled on the side wall of the metal enclosure by the welding process or the glass sintering process.

具体的,在本实施例中,金属围框采用铝合金材料,表面镀涂镍,连接器孔内镀涂镍金。Specifically, in this embodiment, the metal enclosure is made of an aluminum alloy material, the surface is plated with nickel, and the inside of the connector hole is plated with nickel and gold.

优选地,低频连接器和射频连接器通过金锡焊接到金属围框上。Preferably, the low frequency connector and the radio frequency connector are welded to the metal enclosure by gold-tin.

(3)采用表面贴装工艺将封装器件焊接到数模复合基板表面。(3) The packaged device is soldered to the surface of the digital-analog composite substrate by a surface mount process.

(4)将焊接有封装器件的数模复合基板焊接到金属围框上。通过数模复合基板的金属基部分与金属围框之间的焊接,形成高可靠气密封装结构,提高产品的可靠性。(4) Weld the digital-analog composite substrate on which the packaged device is welded to the metal enclosure. Through the welding between the metal base part of the digital-analog composite substrate and the metal enclosure, a highly reliable airtight packaging structure is formed, which improves the reliability of the product.

其中,步骤(3)和步骤(4)也可同步进行,即通过表面贴装工艺将封装器件和装配有连接器的金属围框同时焊接到数模复合基板上。Wherein, step (3) and step (4) can also be performed simultaneously, that is, the packaged device and the metal enclosure equipped with the connector are welded to the digital-analog composite substrate at the same time through a surface mount process.

具体的,在本实施例中,采用锡铅焊接工艺焊接封装器件和金属围框。Specifically, in this embodiment, a tin-lead soldering process is used to solder the packaged device and the metal enclosure.

(5)采用微组装工艺将裸芯片(裸芯片包括所有未经封装的各种芯片)装配到已焊接金属围框的数模复合基板上,其中功率芯片贴装到所述数模复合基板的金属基板上。(5) Using a micro-assembly process to assemble the bare chip (the bare chip includes all unpackaged chips) on the digital-analog composite substrate to which the metal enclosure has been welded, wherein the power chip is mounted on the digital-analog composite substrate of the digital-analog composite substrate. on the metal substrate.

采用表面贴装和微组装混合装配工艺将数字封装器件、射频封装器件以及裸芯片集成装配到数模复合多功能基板上,提高了集成密度。而将功率芯片直接贴装在数模复合基板金属基上,提高了散热效率The digital packaged devices, radio frequency packaged devices and bare chips are integrated and assembled on the digital-analog composite multi-functional substrate by the surface mount and micro-assembly hybrid assembly process, which improves the integration density. The power chip is directly mounted on the metal base of the digital-analog composite substrate, which improves the heat dissipation efficiency.

(6)将盖板与金属围框进行配合封装。(6) The cover plate and the metal enclosure are matched and packaged.

具体的,在本实施例中,盖板与所述金属围框间可采用激光封焊或平行缝焊或钎焊方式封装。Specifically, in this embodiment, laser sealing or parallel seam welding or brazing may be used for packaging between the cover plate and the metal enclosure.

本发明并不局限于前述的具体实施方式。本发明扩展到任何在本说明书中披露的新特征或任何新的组合,以及披露的任一新的方法或过程的步骤或任何新的组合。如果本领域技术人员,在不脱离本发明的精神所做的非实质性改变或改进,都应该属于本发明权利要求保护的范围。The present invention is not limited to the foregoing specific embodiments. The present invention extends to any new features or any new combination disclosed in this specification, as well as any new method or process steps or any new combination disclosed. Any insubstantial changes or improvements made by those skilled in the art without departing from the spirit of the present invention should fall within the scope of protection of the claims of the present invention.

Claims (10)

1.一种高散热数模一体集成封装结构,包括:多功能数模复合基板、金属围框和盖板,所述多功能数模复合基板、金属围框和盖板三者之间配合安装,构成一个密封腔体;其特征在于:所述多功能数模复合基板包括数字介质板、微波介质板和金属基板,所述数字介质板和微波介质板根据电路需要叠合在所述金属基板上形成数模复合电路;1. A high heat dissipation digital-analog integrated package structure, comprising: a multi-functional digital-analog composite substrate, a metal enclosure and a cover plate, and the multi-functional digital-analog composite substrate, the metal enclosure and the cover plate are installed together with each other. , constitutes a sealed cavity; it is characterized in that: the multifunctional digital-analog composite substrate includes a digital medium plate, a microwave medium plate and a metal substrate, and the digital medium plate and the microwave medium plate are superimposed on the metal substrate according to circuit requirements. A digital-analog composite circuit is formed on it; 所述金属围框的侧壁上设置有低频连接器和射频连接器;A low frequency connector and a radio frequency connector are arranged on the side wall of the metal enclosure; 所述多功能数模复合基板上安装有封装器件和功率芯片,所述功率芯片连接到所述金属基板上。A packaged device and a power chip are mounted on the multifunctional digital-analog composite substrate, and the power chip is connected to the metal substrate. 2.根据权利要求1所述的一种高散热数模一体集成封装结构,其特征在于,所述金属基板为铜基板或铝基板。2 . The high heat dissipation digital-analog integrated package structure according to claim 1 , wherein the metal substrate is a copper substrate or an aluminum substrate. 3 . 3.根据权利要求1所述的一种高散热数模一体集成封装结构,其特征在于,所述多功能数模复合基板的表面镀涂有镍金或镍钯金。3 . The high heat dissipation digital-analog integrated package structure according to claim 1 , wherein the surface of the multifunctional digital-analog composite substrate is plated with nickel-gold or nickel-palladium-gold. 4 . 4.根据权利要求1所述的一种高散热数模一体集成封装结构,其特征在于,所述金属围框材料为铝合金、铜、不锈钢、硅铝中的任意一种。4 . The high heat dissipation digital-analog integrated package structure according to claim 1 , wherein the metal enclosure material is any one of aluminum alloy, copper, stainless steel, and silicon aluminum. 5 . 5.根据权利要求1所述的一种高散热数模一体集成封装结构,其特征在于,所述金属围框表面镀涂镍、镍金或镍钯金镀层。5 . The digital-analog integrated package structure with high heat dissipation according to claim 1 , wherein the surface of the metal enclosure is plated with nickel, nickel-gold or nickel-palladium-gold plating. 6 . 6.一种高散热数模一体集成封装结构的制作方法,其特征在于,包括:6. A method for manufacturing a high heat dissipation digital-analog integrated package structure, characterized in that, comprising: 将数字介质板、微波介质板与金属基板进行一体化集成,制作成多功能数模复合基板,所述数字介质板和微波介质板根据电路需要叠合在所述金属基板上形成数模复合电路;The digital medium board, the microwave medium board and the metal substrate are integrated and integrated to make a multi-functional digital-analog composite substrate. The digital medium board and the microwave medium board are superimposed on the metal substrate according to the circuit requirements to form a digital-analog composite circuit. ; 将低频连接器和射频连接器装配到金属围框侧壁上,得到具有输入输出结构的金属围框;Assembling the low frequency connector and the radio frequency connector on the side wall of the metal enclosure to obtain a metal enclosure with an input and output structure; 将封装器件和金属围框焊接到所述多功能数模复合基板上;welding the packaged device and the metal enclosure to the multifunctional digital-analog composite substrate; 采用微组装工艺将裸芯片装配到已焊接有金属围框的数模复合基板上,其中,将裸芯片中的功率芯片贴装到所述多功能数模复合基板的金属基板上;The bare chip is assembled on the digital-analog composite substrate to which the metal enclosure has been welded by using a micro-assembly process, wherein the power chip in the bare chip is mounted on the metal substrate of the multi-functional digital-analog composite substrate; 将盖板与所述金属围框进行配合封装。The cover plate and the metal enclosure are matched and packaged. 7.根据权利要求6所述的一种高散热数模一体集成封装结构的制作方法,其特征在于,所述数字介质板、微波介质板与金属基板通过一体化层压的方式制作成多功能数模复合基板。7 . The method for manufacturing a high heat dissipation digital-analog integrated package structure according to claim 6 , wherein the digital dielectric board, the microwave dielectric board and the metal substrate are made into a multi-functional multi-functional board by means of integrated lamination. 8 . Digital-analog composite substrate. 8.根据权利要求6所述的一种高散热数模一体集成封装结构的制作方法,其特征在于,通过焊接工艺或玻璃烧结工艺将低频连接器和射频连接器装配到所述金属围框的侧壁上。8 . The method for manufacturing a high heat dissipation digital-analog integrated package structure according to claim 6 , wherein the low-frequency connector and the radio-frequency connector are assembled to the metal enclosure through a welding process or a glass sintering process. 9 . on the side wall. 9.根据权利要求6所述的一种高散热数模一体集成封装结构的制作方法,其特征在于,盖板与金属围框之间采用激光封焊、平行封焊或钎焊的方式封装。9 . The method for manufacturing a high heat dissipation digital-analog integrated package structure according to claim 6 , wherein the cover plate and the metal enclosure are packaged by laser sealing, parallel sealing or brazing. 10 . 10.根据权利要求6所述的一种高散热数模一体集成封装结构的制作方法,其特征在于,在将封装器件焊接到多功能数模复合基板的步骤中,通过采用表面贴装工艺将封装器件焊接到多功能数模复合基板的表面上。10. The manufacturing method of a high heat dissipation digital-analog integrated package structure according to claim 6, wherein in the step of soldering the packaged device to the multi-functional digital-analog composite substrate, the surface mount process The packaged device is soldered to the surface of the multifunctional digital-analog composite substrate.
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