CN112420678A - High-heat-dissipation digital-analog integrated packaging structure and manufacturing method thereof - Google Patents
High-heat-dissipation digital-analog integrated packaging structure and manufacturing method thereof Download PDFInfo
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- CN112420678A CN112420678A CN202011304110.9A CN202011304110A CN112420678A CN 112420678 A CN112420678 A CN 112420678A CN 202011304110 A CN202011304110 A CN 202011304110A CN 112420678 A CN112420678 A CN 112420678A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The invention relates to the technical field of electronic packaging, and discloses a high-heat-dissipation digital-analog integrated packaging structure and a manufacturing method thereof. The packaging structure provided by the invention has higher air tightness, and simultaneously improves the integration density and the heat dissipation efficiency of the device.
Description
Technical Field
The invention relates to the technical field of electronic packaging, in particular to a high-heat-dissipation digital-analog integrated packaging structure and a manufacturing method thereof.
Background
The digital-analog integrated multifunctional high-density integration, high-power heat dissipation, high reliability and low cost have important significance for improving the competitiveness of microwave assembly products. The common packaging forms of the high-reliability microwave component products at present mainly comprise a hybrid circuit integrated structure based on a metal box body and an integrated packaging structure based on a multifunctional ceramic substrate, wherein the hybrid circuit integrated structure has the characteristics of high reliability, flexible integration and the like, but generally has relatively low integration density and complex assembly operation; although the ceramic integrated packaging structure is widely applied due to the characteristics of flexible multilayer wiring, high integration density and the like, large-size packaging is difficult to realize due to the structural strength and the limitation of the coefficient of thermal expansion of materials, and the structural compatibility with superior products is poor.
The package structure based on the organic PCB is widely favored in the field of communication electronics due to its low cost, wherein the metal-based PCB is widely used in products such as automotive electronics and power equipment due to its high heat dissipation, but the package structure does not have high reliability and airtightness.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: aiming at the existing problems, the invention provides a high-heat-dissipation digital-analog integrated packaging structure and a manufacturing method thereof.
The technical scheme adopted by the invention is as follows: a high heat dissipation digifax integrative integrated package structure includes: the multifunctional digital-analog composite substrate, the metal enclosure frame and the cover plate are installed in a matched mode to form a sealed cavity; the multifunctional digital-analog composite substrate comprises a digital dielectric plate, a microwave dielectric plate and a metal substrate, wherein the digital dielectric plate and the microwave dielectric plate are overlapped on the metal substrate according to circuit requirements;
a high-low frequency digital-analog composite circuit is integrated on the surface of the metal substrate;
the side wall of the metal enclosure frame is provided with a low-frequency connector and a radio-frequency connector;
and a packaging device and a power chip are arranged on the multifunctional digital-analog composite substrate, and the power chip is connected to the metal substrate.
Further, the metal substrate is a copper substrate or an aluminum substrate.
Furthermore, the surface of the multifunctional digital-analog composite substrate is plated with nickel gold or nickel palladium gold.
Further, the metal enclosure frame is made of any one of aluminum alloy, copper, stainless steel and silicon-aluminum.
Further, the surface of the metal enclosure frame is plated with a nickel, nickel gold or nickel palladium gold plating layer.
The invention also provides a manufacturing method of the high-heat-dissipation digital-analog integrated packaging structure, which comprises the following steps:
integrating a digital dielectric plate, a microwave dielectric plate and a metal substrate into a whole to manufacture a multifunctional digital-analog composite substrate, and integrating a high-frequency digital-analog composite circuit on the surface of the metal substrate;
assembling a low-frequency connector and a radio-frequency connector on the side wall of the metal enclosure frame to obtain the metal enclosure frame with an input and output structure;
welding a packaging device and a metal enclosure frame on the multifunctional digital-analog composite substrate;
assembling a bare chip on the digital-analog composite substrate welded with the metal enclosure frame by adopting a micro-assembly process, wherein a power chip in the bare chip is pasted on the metal substrate of the multifunctional digital-analog composite substrate;
and matching and packaging the cover plate and the metal surrounding frame.
Furthermore, the digital dielectric plate, the microwave dielectric plate and the metal substrate are manufactured into the multifunctional digital-analog composite substrate in an integrated laminating mode.
Further, the low frequency connector and the radio frequency connector are assembled on the side wall of the metal enclosure frame through a welding process or a glass sintering process.
Furthermore, the cover plate and the metal enclosure frame are packaged in a laser sealing welding, parallel sealing welding or brazing mode.
Further, in the step of soldering the packaged device to the multifunctional digital-analog composite substrate, the packaged device is soldered to the surface of the multifunctional digital-analog composite substrate by adopting a surface mounting process.
Compared with the prior art, the beneficial effects of adopting the technical scheme are as follows:
(1) through the welding between the metal basal portion of the digital-analog composite substrate and the metal enclosure frame, a high-reliability airtight packaging structure is formed, and the reliability of a product is improved.
(2) The digital packaging device, the radio frequency packaging device and the bare chip are integrally assembled on the digital-analog composite multifunctional substrate by adopting a surface mounting and micro-assembly mixed assembly process, so that the integration density is improved.
(3) The power chip is directly attached to the metal base of the digital-analog composite substrate, so that the heat dissipation efficiency is improved.
(4) By utilizing the strength and material characteristics of the metal-based composite substrate, the problems of the packaging size limitation of the ceramic substrate and the structural compatibility with the superior product can be effectively solved.
Drawings
Fig. 1 is a schematic view of a digital-analog integrated hermetic package structure.
Fig. 2 is a schematic structural diagram of a metal-based digital-analog composite substrate.
Fig. 3 is a schematic structural view of the metal enclosure assembly connector.
Fig. 4 is a schematic structural diagram of a digital-analog composite substrate soldering packaging device and a metal enclosure frame.
Reference numerals: the circuit comprises a metal base, a 2-digital-analog composite dielectric circuit layer, a 3-metal surrounding frame, a 4-low-frequency connector, a 5-radio-frequency connector, a 6-metal base digital-analog composite substrate, a 7-digital packaging device, an 8-radio-frequency packaging device, a 9-high-power chip, a 10-low-power chip and a 11-cover plate.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
As shown in fig. 1, an embodiment of the present invention provides a high heat dissipation digital-analog integrated package structure, which mainly comprises a multifunctional digital-analog composite substrate, a metal surrounding frame and a cover plate. The metal encloses the frame and welds on multi-functional digifax composite substrate, and the apron adopts laser seal welding, parallel seam welding or mode encapsulation of brazing to enclose on the frame, and a sealed cavity is constituteed to the three.
The multifunctional composite substrate consists of a digital dielectric plate, a microwave dielectric plate and a metal substrate, wherein the digital dielectric plate and the microwave dielectric plate are superposed on the metal substrate. And a high-low frequency digital-analog composite circuit is integrated on the surface of the metal substrate. The metal enclosure frame is welded on the metal substrate in the multifunctional composite substrate. And a packaging device and a power chip are mounted on the multifunctional digital-analog composite substrate, wherein the power chip is also connected to the metal substrate.
The side wall of the metal enclosure frame is provided with a low-frequency connector and a radio-frequency connector which are used for realizing power supply of the packaging structure and transmission of low-frequency/high-frequency signals inside and outside the packaging structure.
Preferably, in this embodiment, the metal substrate is a copper substrate or an aluminum substrate, and the thickness is preferably 500um or more.
Preferably, in this embodiment, the surface of the multifunctional digital-analog composite substrate is plated with nickel gold or nickel palladium gold.
Preferably, in this embodiment, the metal enclosure frame material is any one of aluminum alloy, copper, stainless steel, and silicon aluminum.
Preferably, in this embodiment, the surface of the metal enclosure frame is plated with nickel, nickel gold or nickel palladium gold.
The embodiment of the invention also provides a manufacturing method of the high-heat-dissipation digital-analog integrated packaging structure, which comprises the following steps:
(1) and manufacturing the multifunctional digital-analog composite substrate with high heat dissipation. The digital dielectric plate, the microwave dielectric plate and the metal substrate are integrally laminated to manufacture the multifunctional digital-analog composite substrate with high heat dissipation, the high-low frequency digital-analog composite circuit is integrated on the surface of the metal substrate, and meanwhile, the metal substrate at the airtight welding position of the metal enclosure frame and the power chip mounting position is exposed.
Specifically, in this embodiment, the metal substrate in the digital-analog composite substrate is a copper substrate with a thickness of 800 um. And nickel-palladium-gold is plated on the surface of the digital-analog composite substrate.
(2) And manufacturing a metal enclosure frame with an input/output structure. And the low-frequency connector and the radio-frequency connector are assembled on the side wall of the metal enclosure frame through a welding process or a glass sintering process.
Specifically, in this embodiment, the metal enclosure frame is made of an aluminum alloy material, the surface of the metal enclosure frame is plated with nickel, and the hole of the connector is plated with nickel gold.
Preferably, the low frequency connector and the radio frequency connector are soldered to the metal enclosure by gold-tin soldering.
(3) And welding the packaging device to the surface of the digital-analog composite substrate by adopting a surface mounting process.
(4) And welding the digital-analog composite substrate welded with the packaging device to the metal enclosure frame. Through the welding between the metal basal portion of the digital-analog composite substrate and the metal enclosure frame, a high-reliability airtight packaging structure is formed, and the reliability of a product is improved.
And (3) and (4) can be synchronously performed, namely, the packaged device and the metal enclosure frame provided with the connector are simultaneously welded on the digital-analog composite substrate through a surface mounting process.
Specifically, in this embodiment, the package device and the metal enclosure frame are soldered by using a tin-lead soldering process.
(5) And assembling bare chips (including all unpackaged chips) on the digital-analog composite substrate with the welded metal enclosure frame by adopting a micro-assembly process, wherein the power chips are attached to the metal substrate of the digital-analog composite substrate.
The digital packaging device, the radio frequency packaging device and the bare chip are integrally assembled on the digital-analog composite multifunctional substrate by adopting a surface mounting and micro-assembly mixed assembly process, so that the integration density is improved. The power chip is directly attached to the metal base of the digital-analog composite substrate, so that the heat dissipation efficiency is improved
(6) And (5) packaging the cover plate and the metal surrounding frame in a matching manner.
Specifically, in this embodiment, the cover plate and the metal enclosure frame may be packaged by laser sealing welding, parallel seam welding or soldering.
The invention is not limited to the foregoing embodiments. The invention extends to any novel feature or any novel combination of features disclosed in this specification and any novel method or process steps or any novel combination of features disclosed. Those skilled in the art to which the invention pertains will appreciate that insubstantial changes or modifications can be made without departing from the spirit of the invention as defined by the appended claims.
Claims (10)
1. A high heat dissipation digifax integrative integrated package structure includes: the multifunctional digital-analog composite substrate, the metal enclosure frame and the cover plate are installed in a matched mode to form a sealed cavity; the method is characterized in that: the multifunctional digital-analog composite substrate comprises a digital dielectric plate, a microwave dielectric plate and a metal substrate, wherein the digital dielectric plate and the microwave dielectric plate are overlapped on the metal substrate according to circuit requirements;
a high-low frequency digital-analog composite circuit is integrated on the surface of the metal substrate;
the side wall of the metal enclosure frame is provided with a low-frequency connector and a radio-frequency connector;
and a packaging device and a power chip are arranged on the multifunctional digital-analog composite substrate, and the power chip is connected to the metal substrate.
2. The integrated package structure of claim 1, wherein the metal substrate is a copper substrate or an aluminum substrate.
3. The integrated package structure of high heat dissipation digital-analog module of claim 1, wherein the surface of the multifunctional digital-analog composite substrate is plated with ni-au or ni-pd-au.
4. The integrated high-heat-dissipation digital-analog packaging structure according to claim 1, wherein the metal enclosure frame is made of any one of aluminum alloy, copper, stainless steel and silicon-aluminum.
5. The integrated package structure of high heat dissipation digital-analog module as claimed in claim 1, wherein the surface of the metal enclosure frame is plated with nickel, nickel-gold or nickel-palladium-gold.
6. A manufacturing method of a high-heat-dissipation digital-analog integrated packaging structure is characterized by comprising the following steps:
integrating a digital dielectric plate, a microwave dielectric plate and a metal substrate into a whole to manufacture a multifunctional digital-analog composite substrate, and integrating a high-frequency digital-analog composite circuit on the surface of the metal substrate;
assembling a low-frequency connector and a radio-frequency connector on the side wall of the metal enclosure frame to obtain the metal enclosure frame with an input and output structure;
welding a packaging device and a metal enclosure frame on the multifunctional digital-analog composite substrate;
assembling a bare chip on the digital-analog composite substrate welded with the metal enclosure frame by adopting a micro-assembly process, wherein a power chip in the bare chip is pasted on the metal substrate of the multifunctional digital-analog composite substrate;
and matching and packaging the cover plate and the metal surrounding frame.
7. The manufacturing method of the high-heat-dissipation digital-analog integrated package structure according to claim 6, wherein the digital dielectric plate, the microwave dielectric plate and the metal substrate are manufactured into the multifunctional digital-analog composite substrate in an integrated laminating manner.
8. The method as claimed in claim 6, wherein the low frequency connector and the rf connector are mounted on the sidewall of the metal frame by a soldering process or a glass sintering process.
9. The manufacturing method of the high heat dissipation digital-analog integrated package structure according to claim 6, wherein the cover plate and the metal enclosure frame are packaged by laser sealing, parallel sealing or soldering.
10. The method as claimed in claim 6, wherein in the step of soldering the package device to the multifunctional digital-analog composite substrate, the package device is soldered to the surface of the multifunctional digital-analog composite substrate by using a surface mount technology.
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| CN202011304110.9A CN112420678B (en) | 2020-11-19 | 2020-11-19 | High-heat-dissipation digital-analog integrated packaging structure and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113194599A (en) * | 2021-04-23 | 2021-07-30 | 四川九洲电器集团有限责任公司 | Integrated integration method based on multifunctional composite substrate |
| CN113299618A (en) * | 2021-04-29 | 2021-08-24 | 中国电子科技集团公司第二十九研究所 | Three-dimensional integrated efficient heat dissipation packaging structure and preparation method thereof |
| CN113327904A (en) * | 2021-04-29 | 2021-08-31 | 中国电子科技集团公司第二十九研究所 | Double-sided efficient heat dissipation airtight packaging structure and preparation method thereof |
| CN114126204A (en) * | 2021-11-19 | 2022-03-01 | 中国电子科技集团公司第二十九研究所 | Microwave digital hybrid assembly based on metal matrix composite substrate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5450046A (en) * | 1992-10-29 | 1995-09-12 | Nec Corporation | Composite microwave circuit module assembly and its connection structure |
| US6476463B1 (en) * | 1998-05-28 | 2002-11-05 | Nec Corporation | Microwave integrated circuit multi-chip-module |
| CN205670539U (en) * | 2016-05-05 | 2016-11-02 | 中国工程物理研究院电子工程研究所 | A kind of organic substrate superintegrated three-dimensional microwave circuit structure |
| CN107017208A (en) * | 2017-04-14 | 2017-08-04 | 中国电子科技集团公司第二十九研究所 | A kind of three-dimensional tile type microwave packaging component |
| US20200273769A1 (en) * | 2019-02-26 | 2020-08-27 | Pa&E, Hermetic Solutions Group, Llc | Hermetically sealed electronic packages with electrically powered multi-pin electrical feedthroughs |
-
2020
- 2020-11-19 CN CN202011304110.9A patent/CN112420678B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5450046A (en) * | 1992-10-29 | 1995-09-12 | Nec Corporation | Composite microwave circuit module assembly and its connection structure |
| US6476463B1 (en) * | 1998-05-28 | 2002-11-05 | Nec Corporation | Microwave integrated circuit multi-chip-module |
| CN205670539U (en) * | 2016-05-05 | 2016-11-02 | 中国工程物理研究院电子工程研究所 | A kind of organic substrate superintegrated three-dimensional microwave circuit structure |
| CN107017208A (en) * | 2017-04-14 | 2017-08-04 | 中国电子科技集团公司第二十九研究所 | A kind of three-dimensional tile type microwave packaging component |
| US20200273769A1 (en) * | 2019-02-26 | 2020-08-27 | Pa&E, Hermetic Solutions Group, Llc | Hermetically sealed electronic packages with electrically powered multi-pin electrical feedthroughs |
Non-Patent Citations (1)
| Title |
|---|
| 董东等: "数模复合印制电路微波组件焊接工艺研究", 《电子工艺技术》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113194599A (en) * | 2021-04-23 | 2021-07-30 | 四川九洲电器集团有限责任公司 | Integrated integration method based on multifunctional composite substrate |
| CN113299618A (en) * | 2021-04-29 | 2021-08-24 | 中国电子科技集团公司第二十九研究所 | Three-dimensional integrated efficient heat dissipation packaging structure and preparation method thereof |
| CN113327904A (en) * | 2021-04-29 | 2021-08-31 | 中国电子科技集团公司第二十九研究所 | Double-sided efficient heat dissipation airtight packaging structure and preparation method thereof |
| CN113327904B (en) * | 2021-04-29 | 2023-06-02 | 中国电子科技集团公司第二十九研究所 | Double-sided efficient heat-dissipation airtight packaging structure and preparation method thereof |
| CN113299618B (en) * | 2021-04-29 | 2023-07-14 | 中国电子科技集团公司第二十九研究所 | Three-dimensional integrated high-efficiency heat dissipation packaging structure and preparation method thereof |
| CN114126204A (en) * | 2021-11-19 | 2022-03-01 | 中国电子科技集团公司第二十九研究所 | Microwave digital hybrid assembly based on metal matrix composite substrate |
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| CN112420678B (en) | 2022-06-28 |
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