CN201677551U - Welding structure of Aluminum nitride (AlN) ceramics and metal - Google Patents

Welding structure of Aluminum nitride (AlN) ceramics and metal Download PDF

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Publication number
CN201677551U
CN201677551U CN201020197831XU CN201020197831U CN201677551U CN 201677551 U CN201677551 U CN 201677551U CN 201020197831X U CN201020197831X U CN 201020197831XU CN 201020197831 U CN201020197831 U CN 201020197831U CN 201677551 U CN201677551 U CN 201677551U
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China
Prior art keywords
metal
aluminium nitride
tungsten
nitride ceramics
molybdenum
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Expired - Lifetime
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CN201020197831XU
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Chinese (zh)
Inventor
刘志平
郝宏坤
扬哲
李晓蒙
张文娟
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CETC 13 Research Institute
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CETC 13 Research Institute
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Abstract

The utility model discloses a welding structure of aluminum nitride (AlN) ceramics and metal belonging to the welding field of AIN and metal. The utility model comprises an AIN ceramic substrate and a welded metal layer, between which is disposed a buffer layer comprising tungsten, molybdenum or tungsten-molybdenum alloy. By using the tungsten or molybdenum-buffer layer, which has thermal expansion coefficient similar to that of the AIN ceramics, the low reliability of the welding structure of the AIN ceramic and the metal with higher thermal expansion coefficient can be prevented.

Description

The Welding Structure of aluminium nitride ceramics and metal
Technical field
The utility model belongs to the reliable welding field of aluminium nitride ceramics and metal, relates in particular to the Welding Structure of a kind of microelectronics with aluminium nitride ceramics and metal.
Background technology
Aluminium nitride ceramics is a kind of novel ceramic material, it has high thermal conductivity, low thermal coefficient of expansion, high insulation characterisitic and high mechanical strength, and characteristics such as nontoxic, can be used in the occasion of high heat radiation and high insulation, substitute low Heat Conduction Material commonly used at present, as aluminium oxide ceramics etc., be applied to electronics industry, be more suitable for the large scale integrated circuit requirement.
In the practical application of aluminium nitride ceramics, often aluminium nitride ceramics and various metal parts need be welded, but because the thermal coefficient of expansion of aluminium nitride ceramics is lower, and the thermal coefficient of expansion of most of metal materials is all higher, as kovar alloy, copper or aluminium, therefore, the thermal coefficient of expansion of aluminium nitride ceramics and most of metal materials does not match, and is difficult to the coupling welding.Cause in welding process, produce bigger thermal stress, might destroy metal layer and leak gas, when thermal stress surpasses aluminium nitride ceramics intensity with being connected of aluminium nitride ceramics, also might cause the cracking of aluminium nitride ceramics, thereby cause serious integrity problem.
The utility model content
The technical problems to be solved in the utility model provides the Welding Structure of high aluminium nitride ceramics of a kind of reliability and metal.
For solving the problems of the technologies described above, technical solution adopted in the utility model is: it comprises the metal level of aluminium nitride ceramics substrate and welding, is provided with the cushion of tungsten, molybdenum or tungsten-molybdenum alloy between aluminium nitride ceramics substrate and metal level.
The utility model choose with the tungsten of aluminium nitride ceramics material thermal coefficient of expansion comparison match or molybdenum material as cushion, earlier aluminium nitride ceramics substrate and tungsten or molybdenum are welded, and then will be welded with the higher metal material of the aluminium nitride ceramics of tungsten or molybdenum and other thermal coefficient of expansions and weld.Because tungsten or molybdenum material have played the effect of buffering thermal stress in the centre, improved the soldering reliability of the higher metal material of aluminium nitride ceramics and thermal coefficient of expansion, especially when the aluminium nitride ceramics of large-size and Metal Material Welding, this effect is more obvious.
Adopt the utility model to solve that aluminium nitride ceramics does not match with most of thermal expansion metal coefficient and the problem of the soldering reliability difference that causes has effectively been avoided the cracking phenomena of aluminium nitride ceramics or the phenomenon that the aluminium nitride ceramics packaging part leaks gas.
Description of drawings
Fig. 1 is a vertical view schematic diagram of the present utility model;
Fig. 2 be among Fig. 1 A-A to cross-sectional schematic.
The specific embodiment
Referring to Fig. 1, the utility model comprises the metal level 1 of aluminium nitride ceramics substrate 3 and welding as can be seen, is provided with the cushion 2 of tungsten or molybdenum between aluminium nitride ceramics substrate 3 and metal level 1.
About 800 ℃, with aluminium nitride ceramics substrate 3 and tungsten or molybdenum or tungsten-molybdenum alloy welding, form aluminium nitride tungsten or aluminium nitride molybdenum structure, because aluminium nitride tungsten or aluminium nitride molybdenum form by high temperature sintering, have higher binding strength, reliability and air-tightness, can carry out the plating kovar alloy or weld with various metals.About 800 ℃, weld metal layers 1 on the cushion 2 of tungsten or molybdenum forms reliable Welding Structure again.

Claims (1)

1. the Welding Structure of aluminium nitride ceramics and metal, the metal level (1) that it comprises aluminium nitride ceramics substrate (3) and welding is characterized in that: the cushion (2) that is provided with tungsten, molybdenum or tungsten-molybdenum alloy between aluminium nitride ceramics substrate (3) and metal level (1).
CN201020197831XU 2010-05-21 2010-05-21 Welding structure of Aluminum nitride (AlN) ceramics and metal Expired - Lifetime CN201677551U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201020197831XU CN201677551U (en) 2010-05-21 2010-05-21 Welding structure of Aluminum nitride (AlN) ceramics and metal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201020197831XU CN201677551U (en) 2010-05-21 2010-05-21 Welding structure of Aluminum nitride (AlN) ceramics and metal

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CN201677551U true CN201677551U (en) 2010-12-22

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103327732A (en) * 2013-06-09 2013-09-25 中山大学 High heat conduction substrate and manufacturing method thereof
CN103964897A (en) * 2014-04-30 2014-08-06 惠州市力道电子材料有限公司 Aluminum nitride ceramic chip provided with micro-nano ionic compound film on surface and preparation technology of aluminum nitride ceramic chip
CN105051889A (en) * 2013-03-21 2015-11-11 日本碍子株式会社 Ceramic package and electronic component
CN113130722A (en) * 2015-09-25 2021-07-16 美题隆公司 Light conversion device with high optical power using phosphor elements attached by soldering

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105051889A (en) * 2013-03-21 2015-11-11 日本碍子株式会社 Ceramic package and electronic component
CN105051889B (en) * 2013-03-21 2018-10-16 日本碍子株式会社 Ceramic packaging body and electronic device
CN103327732A (en) * 2013-06-09 2013-09-25 中山大学 High heat conduction substrate and manufacturing method thereof
CN103327732B (en) * 2013-06-09 2016-06-08 中山大学 A kind of high thermal conductive substrate and preparation method thereof
CN103964897A (en) * 2014-04-30 2014-08-06 惠州市力道电子材料有限公司 Aluminum nitride ceramic chip provided with micro-nano ionic compound film on surface and preparation technology of aluminum nitride ceramic chip
CN103964897B (en) * 2014-04-30 2015-07-22 惠州市力道电子材料有限公司 Aluminum nitride ceramic chip provided with micro-nano ionic compound film on surface and preparation technology of aluminum nitride ceramic chip
CN113130722A (en) * 2015-09-25 2021-07-16 美题隆公司 Light conversion device with high optical power using phosphor elements attached by soldering
US12034092B2 (en) 2015-09-25 2024-07-09 Materion Corporation High optical power light conversion device using a phosphor element with solder attachment

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Granted publication date: 20101222

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