CN215496704U - Ku wave band integrated packaging microwave assembly based on HTCC - Google Patents
Ku wave band integrated packaging microwave assembly based on HTCC Download PDFInfo
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- CN215496704U CN215496704U CN202122103234.7U CN202122103234U CN215496704U CN 215496704 U CN215496704 U CN 215496704U CN 202122103234 U CN202122103234 U CN 202122103234U CN 215496704 U CN215496704 U CN 215496704U
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Abstract
The utility model discloses a Ku waveband integrated packaging microwave assembly based on HTCC (high-temperature continuous wave), which belongs to the technical field of microwave communication electronic devices and comprises a Kovar metal surrounding frame, a radio frequency chip module, a plurality of layers of HTCC circuit chips, a laser sealing and welding cover plate, a parallel sealing and welding cover plate and a digital chip module; the radio frequency chip module is in eutectic connection with the multiple layers of HTCC circuit chips; the kovar metal surrounding frame is welded with the multiple layers of HTCC circuit pieces; the kovar metal surrounding frame is in parallel seal welding connection with the parallel seal welding cover plate; the Kovar metal surrounding frame is connected with the laser seal welding cover plate in a laser seal welding mode; the multilayer HTCC circuit chip is in eutectic connection with the digital chip module; the integrated packaging microwave component provided by the utility model makes up the defects of the traditional organic substrate used in a high-frequency mixing integrated circuit, improves the reliability of products and solves the problem of high-frequency work of a miniaturized packaging component.
Description
Technical Field
The utility model belongs to the technical field of microwave communication electronic devices, and particularly relates to a Ku waveband integrated packaging microwave assembly based on HTCC.
Background
The radio frequency microwave component is a core component of radar, electronic countermeasure, communication and other systems, and the technical indexes of the radio frequency microwave component directly restrict the performance of various systems; with the rapid development of radio frequency Microwave circuits, the conventional two-dimensional independent package integration mode hardly meets the current System requirements, and higher requirements are put forward on the miniaturization of component modules, the Multi-chip Module technology (MMCM), the System In Package (SIP) and the three-dimensional integration of radio frequency links.
The composite multilayer board technology is a key technology for developing miniaturized, high-integration and high-reliability microwave millimeter wave multi-chip components, and from various initially commonly used organic substrates to LTCC (low temperature co-fired ceramic) technology and HTCC (high temperature co-fired ceramic) technology, although the organic multilayer substrate has obvious advantages in maturity and cost, the organic multilayer substrate has great limitation in integrating passive devices due to problems of precision and the like; the co-fired ceramic material has an advantage of unique thickness in the aspect of integrating passive devices as a novel material which receives extensive attention recently, and can integrate passive elements such as resistors, capacitors, inductors and the like, while HTCC (high temperature co-fired ceramic) is gaining more and more attention due to its good thermal conductivity.
High temperature co-fired ceramic (HTCC) is mainly obtained by using tungsten metal as a conductor material to co-fire with ceramic materials such as alumina and the like at about 1600 ℃, and by using a shell processing technology of brazing, plating and other processes to complete connection and surface treatment of different material parts. The cost advantage of HTCC packaging is significant since the plated gold thickness is much less than the printed gold thickness of LTCC technology. Aiming at the problem of overlarge high-frequency packaging loss caused by large conductor resistivity, through technical breakthroughs of materials, design, process manufacturing and the like, the applicable frequency of the HTCC shell is higher and higher, and the shells of various packaging forms such as a plane transmission type shell, a vertical transmission type shell and the like can realize full coverage in a Ku wave band.
SUMMERY OF THE UTILITY MODEL
Aiming at the defects in the prior art, the Ku waveband integrated packaging microwave assembly based on the HTCC overcomes the defects of the traditional organic substrate in a high-frequency mixing integrated circuit, improves the reliability of products and solves the problem of high-frequency work of a miniaturized packaging assembly.
In order to achieve the purpose of the utility model, the utility model adopts the technical scheme that:
the utility model provides a Ku waveband integrated packaging microwave assembly based on HTCC (high temperature continuous wave), which comprises a Kovar metal surrounding frame, a radio frequency chip module, a plurality of layers of HTCC circuit chips, a laser seal welding cover plate, a parallel seal welding cover plate and a digital chip module, wherein the Kovar metal surrounding frame is provided with a plurality of layers of high temperature continuous wave (HTCC) circuit chips;
the radio frequency chip module is in eutectic connection with the multiple layers of HTCC circuit chips; the kovar metal surrounding frame is welded with the multiple layers of HTCC circuit pieces; the kovar metal surrounding frame is in parallel seal welding connection with the parallel seal welding cover plate; the Kovar metal surrounding frame is connected with the multi-laser seal welding cover plate in a laser seal welding mode; the multilayer HTCC circuit chip is in eutectic connection with the radio frequency chip module.
The utility model has the beneficial effects that: the Ku waveband integrated packaging microwave component based on the HTCC has the characteristics of high working frequency, multiple layers, high heat conductivity and high wiring density, the Kovar metal enclosure frame has the characteristics of high electric conductivity and integrated sealing performance, and the laser sealing cover plate and the parallel sealing cover plate have the characteristics of easiness in integration and high reliability; the multilayer HTCC circuit board, the radio frequency chip module and the kovar metal enclosing frame realize integrated packaging and high sealing performance through methods of eutectic, bonding, welding, laser sealing and parallel sealing.
Furthermore, the radio frequency chip module is arranged on the upper side of the multilayer HTCC circuit chip, and the digital chip module is arranged on the lower side of the multilayer HTCC circuit chip.
The beneficial effect of adopting the further scheme is as follows: the digital circuit and the radio frequency circuit are stacked on the front side and the back side, signal isolation is achieved in the middle layer of the HTCC circuit chip, and electromagnetic compatibility is improved.
Further, the radio frequency chip module includes a first radio frequency chip RF chip 1st and a second radio frequency chip RF chip 2nd which are sequentially arranged from left to right; the digital chip module comprises a Control chip and a Power chip which are sequentially arranged from left to right.
The beneficial effect of adopting the further scheme is as follows: the digital chip transmits control and power signals to the radio frequency chip through the plurality of layers of HTCC circuit chips, and the radio frequency chip transmits radio frequency signals to corresponding output bonding pads of the assembly through the plurality of layers of HTCC circuit chips.
Further, the multilayer HTCC circuit chip adopts a high-temperature co-fired ceramic substrate.
The beneficial effect of adopting the further scheme is as follows: the co-fired ceramic is mainly obtained by using tungsten metal as a conductor material to realize co-firing with ceramic materials such as aluminum oxide and the like at about 1600 ℃, and completing shell processing technologies of connection and surface treatment of different material parts through processes such as brazing, plating and the like.
Further, the plurality of HTCC circuit pieces comprise a plurality of HTCC circuit pieces, and the HTCC circuit pieces are stacked.
The beneficial effect of adopting the further scheme is as follows: each HTCC circuit chip is stacked, so that the microwave component has the advantages of high working frequency, miniaturization, integrated packaging, strong air tightness and high performance, and has good stability in a working frequency band, wide working temperature range and wide application prospect.
Further, the input impedance and the output impedance of the integrated package microwave component both adopt 50-ohm bonding pads.
The beneficial effect of adopting the further scheme is as follows: the input impedance and the output impedance of the integrated packaging microwave assembly adopt 50-ohm bonding pads, and the corresponding packaging and bonding pad distance is replaceable.
Furthermore, the outside of the integrated packaging microwave component is a round corner square, wherein the peripheral geometric parameters of the integrated packaging microwave component are 6.5 mm-6.6 mm.
The beneficial effect of adopting the further scheme is as follows: the integrated packaging microwave assembly provided by the scheme adds thermal simulation and high-density wiring technology on the basis of the traditional microwave assembly, and the size of the traditional microwave assembly is obviously reduced.
Drawings
Fig. 1 is a schematic structural diagram of a Ku band integrated package microwave component based on HTCC in an embodiment of the present invention.
Fig. 2 is a schematic diagram of a Ku band integrated package microwave module based on HTCC according to an embodiment of the present invention.
Wherein: 1. kovar metal enclosure frame; 2. a radio frequency chip module; 3. a plurality of layers of HTCC circuit chips; 4. sealing and welding the cover plate by laser; 5. sealing and welding the cover plates in parallel; 6. and a digital chip module.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the utility model as defined and defined in the appended claims, and all matters produced by the utility model using the inventive concept are protected.
As shown in fig. 1, in an embodiment of the present invention, the present solution provides an HTCC-based Ku-band integrated package microwave assembly, which includes a kovar metal enclosure frame 1, a radio frequency chip module 2, a multilayer HTCC circuit board 3, a laser seal cover plate 4, a parallel seal cover plate 5, and a digital chip module 6;
the radio frequency chip module 2 is in eutectic connection with the multilayer HTCC circuit chip 3; the kovar metal surrounding frame 1 is welded with the multiple layers of HTCC circuit pieces 3; the kovar metal surrounding frame 1 is in parallel seal welding connection with the parallel seal welding cover plate 5; the kovar metal surrounding frame 1 is connected with the laser seal welding cover plate 4 in a laser seal welding mode; the multilayer HTCC circuit chip 3 is in eutectic connection with the digital chip module 6;
the multilayer HTCC circuit board, the radio frequency chip module and the kovar metal enclosing frame realize integrated packaging and high sealing performance through methods of eutectic, bonding, welding, laser sealing and parallel sealing.
The radio frequency chip module 2 is arranged on the upper side of the multilayer HTCC circuit chip 3, and the digital chip module 6 is arranged on the lower side of the multilayer HTCC circuit chip 3;
the radio frequency chip module 2 comprises a first radio frequency chip RF chip 1st and a second radio frequency chip RF chip 2nd which are sequentially arranged from left to right; the digital chip module 6 comprises a Control chip and a Power chip which are sequentially arranged from left to right;
the digital chip transmits control and power signals to the radio frequency chip through the plurality of layers of HTCC circuit chips, and the radio frequency chip transmits radio frequency signals to corresponding output bonding pads of the assembly through the plurality of layers of HTCC circuit chips.
The multilayer HTCC circuit chip 3 adopts a high-temperature co-fired ceramic substrate;
the multilayer HTCC circuit chips 3 comprise a plurality of HTCC circuit chips, and all the HTCC circuit chips are stacked;
the co-fired ceramic is mainly obtained by using tungsten metal as a conductor material to realize co-firing with ceramic materials such as aluminum oxide and the like at about 1600 ℃, and finishing the shell processing technology of connection and surface treatment of different material parts through the technologies such as brazing, plating and the like, and the thickness of plated gold is far smaller than that of printed gold of an LTCC technology, so that the HTCC packaging has obvious cost advantage, and shells in various packaging forms such as a plane transmission type shell, a vertical transmission type shell and the like can realize full coverage in a Ku waveband; each HTCC circuit chip is stacked, so that the microwave component has the advantages of high working frequency, miniaturization, integrated packaging, strong air tightness and high performance, and has good stability in a working frequency band, wide working temperature range and wide application prospect.
The input impedance and the output impedance of the integrated packaging microwave component adopt 50-ohm bonding pads;
the input impedance and the output impedance of the integrated packaging microwave assembly adopt 50-ohm bonding pads, and the corresponding packaging and bonding pad distance is replaceable.
As shown in fig. 2, the outside of the integrated packaged microwave module is a rounded square, wherein the geometric parameters of the periphery of the integrated packaged microwave module are 6.5 mm-6.6 mm.
The working principle of the utility model is as follows: according to the Ku waveband integrated packaging microwave component based on the HTCC, the kovar metal surrounding frame 1 is welded with the multiple layers of HTCC circuit pieces 3, wherein the multiple layers of HTCC circuit pieces 3 adopt a high-density wiring technology and a radio frequency vertical interconnection technology to carry out layout, partitioning and interconnection on digital signals and module signals; the radio frequency chip module 2 and the digital name module 6 are respectively bonded and interconnected with the parallel sealing cover plate 5 and the multilayer HTCC circuit chip 3 through a micro-assembly process; the laser seal welding cover plate 4 and the parallel seal welding cover plate 5 are respectively seal welded with the kovar metal surrounding frame 1 through a seal welding technology, so that the air tightness of the whole assembly is ensured; each part adopts a bonding pad with input impedance and output impedance of 50 ohms, wherein the digital chip module 6 transmits a control signal output by the control chip and a power signal output by the power chip to the radio frequency chip module 2 through the plurality of layers of HTCC circuit chips 3, and the radio frequency chip module 2 transmits the radio frequency signal to the output bonding pad corresponding to the output component through the plurality of layers of HTCC circuit chips 3.
The utility model has the beneficial effects that: the multilayer HTCC circuit chip has the characteristics of more layers and high wiring density; the radio frequency and digital chip has the characteristics of miniaturization and high integration level, all internal parts and circuits are produced and assembled by adopting an advanced micro-assembly process, and the microwave assembly can meet the heat dissipation requirement of the microwave assembly applied to practical engineering; the Ku waveband integrated packaging microwave component based on the HTCC is added with thermal simulation and high-density wiring technology on the basis of the traditional microwave component, so that the size of the traditional microwave component is obviously reduced; the microwave component effectively combines the shape of the HTCC substrate with the metal enclosure frame, realizes SIP packaging while realizing millimeter wave performance, and can meet the requirement of airtight packaging; the microwave assembly has the advantages of remarkably improving the integration density, greatly reducing the circuit size, having the characteristics of small volume, stable performance, high index consistency and the like, simultaneously having good input and output matching, being suitable for batch production, greatly reducing the production cost, and being suitable for various microwave systems such as radar, electronic countermeasure and satellite communication.
Claims (7)
1. A Ku waveband integrated packaging microwave assembly based on HTCC is characterized by comprising a Kovar metal surrounding frame (1), a radio frequency chip module (2), a plurality of layers of HTCC circuit chips (3), a laser sealing cover plate (4), a parallel sealing cover plate (5) and a digital chip module (6);
the radio frequency chip module (2) is in eutectic connection with the multilayer HTCC circuit chip (3); the kovar metal surrounding frame (1) is welded with the multiple layers of HTCC circuit pieces (3); the kovar metal surrounding frame (1) is in parallel seal welding connection with the parallel seal welding cover plate (5); the kovar metal surrounding frame (1) is connected with the laser seal welding cover plate (4) in a laser seal welding mode; the multilayer HTCC circuit chip (3) is in eutectic connection with the digital chip module (6).
2. The Ku waveband integrated packaging microwave component based on the HTCC of claim 1, wherein the radio frequency chip module (2) is arranged on the upper side of the multilayer HTCC circuit board (3), and the digital chip module (6) is arranged on the lower side of the multilayer HTCC circuit board (3).
3. The HTCC based Ku band integrated package microwave assembly according to claim 2, wherein the radio frequency chip module (2) comprises a first radio frequency chip RF chip 1st and a second radio frequency chip RF chip 2nd arranged in sequence from left to right; the digital chip module (6) comprises a Control chip and a Power chip which are sequentially arranged from left to right.
4. The integrated package Ku-band microwave component based on HTCC according to claim 1, wherein the multilayer HTCC circuit board (3) is a high temperature co-fired ceramic substrate.
5. The HTCC-based Ku-band integrated package microwave assembly according to claim 1, wherein the multilayer HTCC circuit pieces (3) comprise several HTCC circuit pieces, and wherein the HTCC circuit pieces are stacked.
6. The HTCC-based Ku band integrated package microwave assembly according to any of the claims 1 to 5, wherein the integrated package microwave assembly has an input impedance and an output impedance of 50 ohm pads.
7. The HTCC-based Ku band integrated package microwave assembly according to any of the claims 1 to 5, wherein the outside of the integrated package microwave assembly is a rounded square, wherein the peripheral geometrical parameters are 6.5mm to 6.6 mm.
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| CN202122103234.7U CN215496704U (en) | 2021-09-01 | 2021-09-01 | Ku wave band integrated packaging microwave assembly based on HTCC |
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| CN202122103234.7U CN215496704U (en) | 2021-09-01 | 2021-09-01 | Ku wave band integrated packaging microwave assembly based on HTCC |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114594351A (en) * | 2022-03-18 | 2022-06-07 | 国网浙江省电力有限公司电力科学研究院 | Transformer bushing partial discharge monitoring chip device and method |
| CN115279027A (en) * | 2022-06-22 | 2022-11-01 | 苏州博海创业微系统有限公司 | Large-size complex microwave circuit and multi-cavity local air tightness packaging method thereof |
| CN115995668A (en) * | 2023-03-24 | 2023-04-21 | 成都雷电微力科技股份有限公司 | Ka frequency band antenna adopting module airtight framework |
| CN116937213A (en) * | 2023-09-12 | 2023-10-24 | 成都华兴大地科技有限公司 | TR module structure based on HTCC vertical transition |
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2021
- 2021-09-01 CN CN202122103234.7U patent/CN215496704U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114594351A (en) * | 2022-03-18 | 2022-06-07 | 国网浙江省电力有限公司电力科学研究院 | Transformer bushing partial discharge monitoring chip device and method |
| WO2023174448A1 (en) * | 2022-03-18 | 2023-09-21 | 国网浙江省电力有限公司电力科学研究院 | Transformer bushing partial discharge monitoring chip device and method |
| CN115279027A (en) * | 2022-06-22 | 2022-11-01 | 苏州博海创业微系统有限公司 | Large-size complex microwave circuit and multi-cavity local air tightness packaging method thereof |
| CN115995668A (en) * | 2023-03-24 | 2023-04-21 | 成都雷电微力科技股份有限公司 | Ka frequency band antenna adopting module airtight framework |
| CN116937213A (en) * | 2023-09-12 | 2023-10-24 | 成都华兴大地科技有限公司 | TR module structure based on HTCC vertical transition |
| CN116937213B (en) * | 2023-09-12 | 2023-12-08 | 成都华兴大地科技有限公司 | TR module structure based on HTCC vertical transition |
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