The four modular belt bandpass filters based on 1/3 equilateral triangle substrate integrated resonator
Technical field
The invention belongs to millimeter-wave technology field, more particularly to based on 1/3 equilateral triangle substrate integrated resonator
Four modular belt bandpass filters.
Background technology
In Modern wireless communication, microwave frequency band communication system traffic is various, and frequency resource is extremely nervous, future communication technologies
Towards higher frequency section -- millimeter wave direction is developed.Wave filter, as the part for separating signal, is pass in wireless communication system
One of key section.It is high quality factor that triangle substrate integrated resonator has, low insertion loss, compact conformation, high-power
The features such as capacity, had a wide range of applications in modern communicationses.And with the continuous improvement of frequency range, the chi of millimetric wave device
It is very little constantly to reduce.When the design size of millimetric wave device narrows down to some degree, due to the office of industrial processing technology
It is sex-limited, it will be unable to accurate processing.How the frequency range of wave filter is improved, and industrial processing technology can accurately add now
The problem of work, solution increasingly desirable as the field.
The content of the invention
In order to solve the technical problem that above-mentioned background technology is proposed, the present invention is intended to provide based on 1/3 equilateral triangle base
Four modular belt bandpass filters of piece integrated resonator, solve the lance that filter frequency range increase and industrial processes become between hardly possible
Shield.
In order to realize above-mentioned technical purpose, the technical scheme is that:
Based on four modular belt bandpass filters of 1/3 equilateral triangle substrate integrated resonator, resonator cavities, ellipse are included
Plated-through hole and 2 microstrip lines;The resonator cavities are from top to bottom successively comprising top layer metallic layer, the medium being parallel to each other
Substrate and bottom metal layer, the top layer metallic layer, dielectric substrate and bottom metal layer are the plane quadrilateral of mutually congruence, institute
State plane quadrilateral comprising first while, second while, the 3rd while and when the 4th, the first angle while with second is 60 °, the 3rd side
Perpendicular to the second side, the 4th while perpendicular to first while, the 3rd angle while with the 4th is 120 °, and first while with second etc.
Long, the 3rd is isometric while with the 4th, on dielectric substrate along its first while and two row circular metals of uniformly arranging when second
Change through hole;There are two sides of circular metalized through hole in four sides of resonator cavities as electric wall, other two side
As magnetic wall, two microstrip lines set respectively along the edge of two magnetic walls and intersect at the junction of two magnetic walls, institute
Oval metal through hole is stated to be located on foregoing dielectric substrate.
Wherein, the impedance of above-mentioned two microstrip lines is 50 ohm.
Wherein, above-mentioned four modular belt bandpass filter is mirror symmetrical structure.
Wherein, one group of defect ground structure is etched with above-mentioned bottom metal layer.
Wherein, drawbacks described above ground structure includes 3 slotted lines being parallel to each other, and the two ends of every slotted line are arrow
Shape.
The beneficial effect brought using above-mentioned technical proposal:
(1)The present invention utilizes the coupling of 1/3 equilateral triangle substrate four mode of integrated resonator, and on the resonator
Increase the main mould frequency that oval metal through hole changes resonator, resonator is become wave filter, improve filter range, and
And pass band width is big;
(2)Primary structure of the present invention is exactly a 1/3 equilateral triangle substrate integrated resonator, simple and compact for structure, easily
In industrial processes.
Brief description of the drawings
Fig. 1 is the structural representation of resonator cavities in the present invention.
Fig. 2 is the three-dimensional topographical schematic diagram of resonator cavities in the present invention.
Fig. 3 is the structural representation of resonator in the present invention.
Fig. 4 is the structural representation of four modular belt bandpass filter of the invention.
Fig. 5 is the S parameter simulation waveform of resonator in the present invention.
Fig. 6 is the S parameter simulation waveform of four modular belt bandpass filter of the invention.
Fig. 7 is defect ground structure schematic diagram in the present invention.
Fig. 8 carries the structural representation of the modular belt bandpass filter of defect ground structure four for the present invention.
Fig. 9 carries the S parameter simulation waveform of the modular belt bandpass filter of defect ground structure four for the present invention.
Label declaration:1st, top layer metallic layer;2nd, dielectric substrate;3rd, circular metalized through hole;4th, bottom metal layer.
Embodiment
Below with reference to accompanying drawing, technical scheme is described in detail.
The elementary cell of the present invention is 1/3 equilateral triangle substrate integrated resonator, the resonator be substantially by
Split from an equilateral-triangle resonance cavity, by equilateral-triangle resonance cavity respectively along center to the vertical line on three sides section
Segmentation.
Based on four modular belt bandpass filters of 1/3 equilateral triangle substrate integrated resonator, resonator cavities, ellipse are included
Plated-through hole and 2 microstrip lines.As depicted in figs. 1 and 2, the resonator cavities from top to bottom include what is be parallel to each other successively
Top layer metallic layer 1, dielectric substrate 2 and bottom metal layer 4, the top layer metallic layer 1, dielectric substrate 2 and bottom metal layer 4 are phase
The mutual plane quadrilateral of congruence, the plane quadrilateral comprising first while, second while, the 3rd while and when the 4th, the first side and the
The angle on two sides is 60 °, the 3rd while perpendicular to second while, the 4th while perpendicular to first while, the 3rd angle while with the 4th is
120 °, and first is isometric while with second, the 3rd is isometric while with the 4th, along its first side and second on dielectric substrate 2
Side is uniformly arranged the two circular metalized through holes 3 of row.There are two of circular metalized through hole 3 in four sides of resonator cavities
Side is set simultaneously as electric wall, other two side as magnetic wall, two microstrip lines respectively along the edge of two magnetic walls
The junction of two magnetic walls is intersected at, two microstrip lines collectively form a complete resonator with resonator cavities, in this reality
Apply in example, the impedance of two microstrip lines is 50 ohm, this two microstrip lines respectively as resonator input and output end,
Its structure is as shown in Figure 3.
Above-mentioned resonator includes four patternsTM 101Mould,TM 201Mould,TM 102Mould andTM 303Mould, as shown in figure 4, in resonator
Dielectric substrate be provided with oval metal through hole, it act as the resonant frequency for improving TM101 moulds in former resonator, madeTM 101Mould andTM 201Mould,TM 102Mould,TM 303Mould produces coupling respectively, and then forms a bandpass filter.Fig. 5 and Fig. 6 difference
For the S parameter simulation waveform of resonator and four modular belt bandpass filters, its abscissa is frequency(Unit:GHz), ordinate
For S parameter(Unit:Decibel), solid line(Simulated S21)With dotted line(Simulated S11)Reflection of electromagnetic wave is represented respectively
The relation of the relation of coefficient and frequency, electromagnetic transmission coefficient and frequency, comparison diagram 5 and Fig. 6 are visible,TM 101The resonant frequency of mould
Improve a lot, andTM 201Mould,TM 102Mould andTM 303Mould is coupled.In the present embodiment, whole four modular belt pass filter
Device is mirror symmetrical structure.
The schematic diagram of defect ground structure in the present invention as shown in Figure 7, the defect ground structure includes 3 double arrows being parallel to each other
The slotted line of head shapes, is for more higher mode in rejects trap, so as to reach improvement using the purpose of the defect ground structure
Effect with external characteristics.Fig. 8 is the structural representation with the modular belt bandpass filter of defect ground structure four, and Fig. 9 is imitative for its S parameter
True oscillogram, by Tu Ke get, the centre frequency of the bandpass filter is 20.01GHz, -5dB with a width of 14.55GHz ~
27.52GHz, in-band insertion loss is 2.2dB or so, and return loss is more than 13dB, illustrates that the performance of filter is good.
The technological thought of above example only to illustrate the invention, it is impossible to which protection scope of the present invention is limited with this, it is every
According to technological thought proposed by the present invention, any change done on the basis of technical scheme each falls within the scope of the present invention
Within.