CN104659451B - The four modular belt bandpass filters based on 1/3 equilateral triangle substrate integrated resonator - Google Patents

The four modular belt bandpass filters based on 1/3 equilateral triangle substrate integrated resonator Download PDF

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Publication number
CN104659451B
CN104659451B CN201510068033.4A CN201510068033A CN104659451B CN 104659451 B CN104659451 B CN 104659451B CN 201510068033 A CN201510068033 A CN 201510068033A CN 104659451 B CN104659451 B CN 104659451B
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China
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resonator
modular belt
equilateral triangle
bandpass filters
belt bandpass
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CN201510068033.4A
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CN104659451A (en
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许锋
郑朝义
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Nanjing Post and Telecommunication University
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Nanjing Post and Telecommunication University
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Abstract

The invention discloses the four modular belt bandpass filters based on 1/3 equilateral triangle substrate integrated resonator, resonator cavities, oval metal through hole and 2 microstrip lines are included.Resonator cavities are from top to bottom successively comprising top layer metallic layer, dielectric substrate and the bottom metal layer being parallel to each other, and two microstrip lines connect resonator cavities respectively, constitute a complete resonator, and oval metal through hole is set on the resonator.It is of the invention simple in construction, it is easy to process, and bandwidth of operation is big, electrical property is good, solves the contradiction that filter frequency range increase and industrial processes become between hardly possible.

Description

The four modular belt bandpass filters based on 1/3 equilateral triangle substrate integrated resonator
Technical field
The invention belongs to millimeter-wave technology field, more particularly to based on 1/3 equilateral triangle substrate integrated resonator Four modular belt bandpass filters.
Background technology
In Modern wireless communication, microwave frequency band communication system traffic is various, and frequency resource is extremely nervous, future communication technologies Towards higher frequency section -- millimeter wave direction is developed.Wave filter, as the part for separating signal, is pass in wireless communication system One of key section.It is high quality factor that triangle substrate integrated resonator has, low insertion loss, compact conformation, high-power The features such as capacity, had a wide range of applications in modern communicationses.And with the continuous improvement of frequency range, the chi of millimetric wave device It is very little constantly to reduce.When the design size of millimetric wave device narrows down to some degree, due to the office of industrial processing technology It is sex-limited, it will be unable to accurate processing.How the frequency range of wave filter is improved, and industrial processing technology can accurately add now The problem of work, solution increasingly desirable as the field.
The content of the invention
In order to solve the technical problem that above-mentioned background technology is proposed, the present invention is intended to provide based on 1/3 equilateral triangle base Four modular belt bandpass filters of piece integrated resonator, solve the lance that filter frequency range increase and industrial processes become between hardly possible Shield.
In order to realize above-mentioned technical purpose, the technical scheme is that:
Based on four modular belt bandpass filters of 1/3 equilateral triangle substrate integrated resonator, resonator cavities, ellipse are included Plated-through hole and 2 microstrip lines;The resonator cavities are from top to bottom successively comprising top layer metallic layer, the medium being parallel to each other Substrate and bottom metal layer, the top layer metallic layer, dielectric substrate and bottom metal layer are the plane quadrilateral of mutually congruence, institute State plane quadrilateral comprising first while, second while, the 3rd while and when the 4th, the first angle while with second is 60 °, the 3rd side Perpendicular to the second side, the 4th while perpendicular to first while, the 3rd angle while with the 4th is 120 °, and first while with second etc. Long, the 3rd is isometric while with the 4th, on dielectric substrate along its first while and two row circular metals of uniformly arranging when second Change through hole;There are two sides of circular metalized through hole in four sides of resonator cavities as electric wall, other two side As magnetic wall, two microstrip lines set respectively along the edge of two magnetic walls and intersect at the junction of two magnetic walls, institute Oval metal through hole is stated to be located on foregoing dielectric substrate.
Wherein, the impedance of above-mentioned two microstrip lines is 50 ohm.
Wherein, above-mentioned four modular belt bandpass filter is mirror symmetrical structure.
Wherein, one group of defect ground structure is etched with above-mentioned bottom metal layer.
Wherein, drawbacks described above ground structure includes 3 slotted lines being parallel to each other, and the two ends of every slotted line are arrow Shape.
The beneficial effect brought using above-mentioned technical proposal:
(1)The present invention utilizes the coupling of 1/3 equilateral triangle substrate four mode of integrated resonator, and on the resonator Increase the main mould frequency that oval metal through hole changes resonator, resonator is become wave filter, improve filter range, and And pass band width is big;
(2)Primary structure of the present invention is exactly a 1/3 equilateral triangle substrate integrated resonator, simple and compact for structure, easily In industrial processes.
Brief description of the drawings
Fig. 1 is the structural representation of resonator cavities in the present invention.
Fig. 2 is the three-dimensional topographical schematic diagram of resonator cavities in the present invention.
Fig. 3 is the structural representation of resonator in the present invention.
Fig. 4 is the structural representation of four modular belt bandpass filter of the invention.
Fig. 5 is the S parameter simulation waveform of resonator in the present invention.
Fig. 6 is the S parameter simulation waveform of four modular belt bandpass filter of the invention.
Fig. 7 is defect ground structure schematic diagram in the present invention.
Fig. 8 carries the structural representation of the modular belt bandpass filter of defect ground structure four for the present invention.
Fig. 9 carries the S parameter simulation waveform of the modular belt bandpass filter of defect ground structure four for the present invention.
Label declaration:1st, top layer metallic layer;2nd, dielectric substrate;3rd, circular metalized through hole;4th, bottom metal layer.
Embodiment
Below with reference to accompanying drawing, technical scheme is described in detail.
The elementary cell of the present invention is 1/3 equilateral triangle substrate integrated resonator, the resonator be substantially by Split from an equilateral-triangle resonance cavity, by equilateral-triangle resonance cavity respectively along center to the vertical line on three sides section Segmentation.
Based on four modular belt bandpass filters of 1/3 equilateral triangle substrate integrated resonator, resonator cavities, ellipse are included Plated-through hole and 2 microstrip lines.As depicted in figs. 1 and 2, the resonator cavities from top to bottom include what is be parallel to each other successively Top layer metallic layer 1, dielectric substrate 2 and bottom metal layer 4, the top layer metallic layer 1, dielectric substrate 2 and bottom metal layer 4 are phase The mutual plane quadrilateral of congruence, the plane quadrilateral comprising first while, second while, the 3rd while and when the 4th, the first side and the The angle on two sides is 60 °, the 3rd while perpendicular to second while, the 4th while perpendicular to first while, the 3rd angle while with the 4th is 120 °, and first is isometric while with second, the 3rd is isometric while with the 4th, along its first side and second on dielectric substrate 2 Side is uniformly arranged the two circular metalized through holes 3 of row.There are two of circular metalized through hole 3 in four sides of resonator cavities Side is set simultaneously as electric wall, other two side as magnetic wall, two microstrip lines respectively along the edge of two magnetic walls The junction of two magnetic walls is intersected at, two microstrip lines collectively form a complete resonator with resonator cavities, in this reality Apply in example, the impedance of two microstrip lines is 50 ohm, this two microstrip lines respectively as resonator input and output end, Its structure is as shown in Figure 3.
Above-mentioned resonator includes four patternsTM 101Mould,TM 201Mould,TM 102Mould andTM 303Mould, as shown in figure 4, in resonator Dielectric substrate be provided with oval metal through hole, it act as the resonant frequency for improving TM101 moulds in former resonator, madeTM 101Mould andTM 201Mould,TM 102Mould,TM 303Mould produces coupling respectively, and then forms a bandpass filter.Fig. 5 and Fig. 6 difference For the S parameter simulation waveform of resonator and four modular belt bandpass filters, its abscissa is frequency(Unit:GHz), ordinate For S parameter(Unit:Decibel), solid line(Simulated S21)With dotted line(Simulated S11)Reflection of electromagnetic wave is represented respectively The relation of the relation of coefficient and frequency, electromagnetic transmission coefficient and frequency, comparison diagram 5 and Fig. 6 are visible,TM 101The resonant frequency of mould Improve a lot, andTM 201Mould,TM 102Mould andTM 303Mould is coupled.In the present embodiment, whole four modular belt pass filter Device is mirror symmetrical structure.
The schematic diagram of defect ground structure in the present invention as shown in Figure 7, the defect ground structure includes 3 double arrows being parallel to each other The slotted line of head shapes, is for more higher mode in rejects trap, so as to reach improvement using the purpose of the defect ground structure Effect with external characteristics.Fig. 8 is the structural representation with the modular belt bandpass filter of defect ground structure four, and Fig. 9 is imitative for its S parameter True oscillogram, by Tu Ke get, the centre frequency of the bandpass filter is 20.01GHz, -5dB with a width of 14.55GHz ~ 27.52GHz, in-band insertion loss is 2.2dB or so, and return loss is more than 13dB, illustrates that the performance of filter is good.
The technological thought of above example only to illustrate the invention, it is impossible to which protection scope of the present invention is limited with this, it is every According to technological thought proposed by the present invention, any change done on the basis of technical scheme each falls within the scope of the present invention Within.

Claims (5)

1. the four modular belt bandpass filters based on 1/3 equilateral triangle substrate integrated resonator, it is characterised in that:Include resonator cavity Body, oval metal through hole and 2 microstrip lines;The resonator cavities are from top to bottom successively comprising the top layer gold being parallel to each other Belong to layer, dielectric substrate and bottom metal layer, the top layer metallic layer, dielectric substrate and bottom metal layer are mutually congruent plane Quadrangle, the plane quadrilateral comprising first while, second while, the 3rd while and when the 4th, the first angle while with second is 60 °, the 3rd while perpendicular to second while, the 4th while perpendicular to first while, the 3rd angle while with the 4th is 120 °, and the first side Isometric with the second side, the 3rd is isometric while with the 4th, on dielectric substrate along its first while and uniformly arrange two when second Arrange circular metalized through hole;There are two sides of circular metalized through hole in four sides of resonator cavities as electric wall, its Two sides remaining as magnetic wall, two microstrip lines set respectively along the edge of two magnetic walls and intersect at two magnetic walls Junction, the oval metal through hole is located on foregoing dielectric substrate.
2. the four modular belt bandpass filters according to claim 1 based on 1/3 equilateral triangle substrate integrated resonator, its feature It is:The impedance of two microstrip lines is 50 ohm.
3. the four modular belt bandpass filters according to claim 1 based on 1/3 equilateral triangle substrate integrated resonator, its feature It is:The four modular belt bandpass filter is mirror symmetrical structure.
4. the four modular belt bandpass filters according to claim 1 based on 1/3 equilateral triangle substrate integrated resonator, its feature It is:One group of defect ground structure is etched with the bottom metal layer.
5. the four modular belt bandpass filters according to claim 4 based on 1/3 equilateral triangle substrate integrated resonator, its feature It is:The defect ground structure includes 3 slotted lines being parallel to each other, and the two ends of every slotted line are arrow shaped.
CN201510068033.4A 2015-02-09 2015-02-09 The four modular belt bandpass filters based on 1/3 equilateral triangle substrate integrated resonator Expired - Fee Related CN104659451B (en)

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105006613A (en) * 2015-07-03 2015-10-28 中国矿业大学 Quarter-module substrate integration waveguide band-pass filter with an ellipse defect structure
CN107086338B (en) * 2016-02-16 2019-05-21 青岛海尔电子有限公司 Four mould defects ground formula filter
CN107086347A (en) * 2016-02-16 2017-08-22 青岛海尔电子有限公司 Four mould defects ground formula resonator
CN105720340A (en) * 2016-02-19 2016-06-29 南京邮电大学 Compact type band-pass filter containing low-frequency transmission zero
CN113314817B (en) * 2021-05-28 2022-02-22 南京邮电大学 Double-layer triangular substrate integrated waveguide filter

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KR20100097392A (en) * 2009-02-26 2010-09-03 광운대학교 산학협력단 Spurious suppressed substrate integrated waveguide (siw) filter using stepped-impedance resonator (sir) structure
CN202259650U (en) * 2011-10-25 2012-05-30 电子科技大学 Highly miniaturized substrate integrated waveguide resonator
CN103682533A (en) * 2013-11-20 2014-03-26 东南大学 Microwave and millimeter wave filter
KR101407727B1 (en) * 2013-09-05 2014-06-13 인천대학교 산학협력단 Compact low-loss filters with the stacked and SIW structure for satellite communications terminals
CN203895577U (en) * 2014-05-13 2014-10-22 南京邮电大学 Band pass filter based on one third equilateral triangle substrate integration waveguide
CN104319435A (en) * 2014-10-20 2015-01-28 华南理工大学 Substrate integrated waveguide band-pass filter applied onto WLAN (wireless local area network) system

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201178126Y (en) * 2008-01-11 2009-01-07 东南大学 A substrate integration waveguide multi-mode filter based on square high order cavity
KR20100097392A (en) * 2009-02-26 2010-09-03 광운대학교 산학협력단 Spurious suppressed substrate integrated waveguide (siw) filter using stepped-impedance resonator (sir) structure
CN202259650U (en) * 2011-10-25 2012-05-30 电子科技大学 Highly miniaturized substrate integrated waveguide resonator
KR101407727B1 (en) * 2013-09-05 2014-06-13 인천대학교 산학협력단 Compact low-loss filters with the stacked and SIW structure for satellite communications terminals
CN103682533A (en) * 2013-11-20 2014-03-26 东南大学 Microwave and millimeter wave filter
CN203895577U (en) * 2014-05-13 2014-10-22 南京邮电大学 Band pass filter based on one third equilateral triangle substrate integration waveguide
CN104319435A (en) * 2014-10-20 2015-01-28 华南理工大学 Substrate integrated waveguide band-pass filter applied onto WLAN (wireless local area network) system

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