CN203895577U - Band pass filter based on one third equilateral triangle substrate integration waveguide - Google Patents

Band pass filter based on one third equilateral triangle substrate integration waveguide Download PDF

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Publication number
CN203895577U
CN203895577U CN201420241032.6U CN201420241032U CN203895577U CN 203895577 U CN203895577 U CN 203895577U CN 201420241032 U CN201420241032 U CN 201420241032U CN 203895577 U CN203895577 U CN 203895577U
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China
Prior art keywords
pass filter
band pass
equilateral triangle
filter based
resonant cavity
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CN201420241032.6U
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Chinese (zh)
Inventor
许锋
郑朝义
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Nanjing Post and Telecommunication University
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Nanjing Post and Telecommunication University
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Abstract

The utility model discloses a band pass filter based on a one third equilateral triangle substrate integration waveguide. The band pass filter comprises six resonance units and two micro-strip lines. The six resonance units are crossed coupling to form a hexagonal resonant cavity. The two micro-strip lines are respectively connected with the hexagonal resonant cavity, and are used as an input terminal and an output terminal of the band pass filter. According to the band pass filter provided by the utility model, only a one third equilateral triangle cavity is adopted, the size of the filter is substantially minimized, and a passband bandwidth is increased, hence requirements of the medium size and miniaturization in a modern wireless communication system are satisfied.

Description

Band pass filter based on 1/3rd equilateral triangle substrate integral waveguides
Technical field
The utility model belongs to microwave technical field, particularly the band pass filter based on 1/3rd equilateral triangle substrate integral waveguides.
Background technology
In Modern wireless communication, microwave and millimeter wave communication system traffic is day by day various, and frequency resource is more nervous, and wireless communication technology is in the urgent need to towards miniaturization, high-performance, low-cost future development.Microwave filter, for separating of signal, is one of key component in present wireless communication system.
In recent years, substrate integrated waveguide technology is suggested, the feature such as the high quality factor having due to substrate integrated waveguide technology, low insertion loss, high integration, high power capacity, and microwave device has had more wide development.In substrate integral wave guide filter, rectangle, circular cavity filter have obtained very large exploitation, and triangle filter research is less.How to reduce the size of triangle filter, improve the pass band width of filter, better meet the requirement of modernization wireless communication system miniaturization, becoming this field needs the problem solving day by day.
Utility model content
The problem existing in order to solve above-mentioned background technology, the utility model is intended to based on 1/3rd equilateral triangles
The band pass filter of shape substrate integration wave-guide, reduces filter size, improves filter passband bandwidth.
In order to realize above-mentioned technical purpose, the technical solution of the utility model is:
Band pass filter based on 1/3rd equilateral triangle substrate integral waveguides, described band pass filter comprises six resonant elements and two microstrip lines, each resonant element comprises top layer metallic layer from top to bottom successively, dielectric substrate and bottom metal layer, described top layer metallic layer, the plane quadrilateral that is shaped as mutual congruence of dielectric substrate and bottom metal layer, described plane quadrilateral comprises first side, Second Edge, the 3rd limit and the 4th limit, the angle of first side and Second Edge is 60 °, the 3rd limit is perpendicular to Second Edge, the 4th limit is perpendicular to first side, the angle on the 3rd limit and the 4th limit is 120 °, and on dielectric substrate along its first side and the Second Edge plated-through hole of evenly arranging, in four sides of resonant element, there are two sides of plated-through hole as electric wall, another two sides are as magnetic wall, six resonant element cross-couplings are a hexagon resonant cavity, the electric wall of adjacent resonant element is coupled by perceptual window, form aforementioned hexagonal shape resonant cavity, described two microstrip lines connect respectively hexagon resonant cavity, input and output as this band pass filter.
Wherein, in above-mentioned hexagon resonant cavity, the adjacent magnetic wall of adjacent resonant element is all at grade.
Wherein, above-mentioned hexagon resonant cavity is symmetrical about central, transverse axis and the center longitudinal axis of described band pass filter.
Wherein, the impedance of above-mentioned two microstrip lines is 50 ohm.Article two, microstrip line is symmetrical about central, transverse axis and the center longitudinal axis of described band pass filter.
Wherein, on the bottom metal layer of above-mentioned hexagon resonant cavity, be etched with two groups of defect ground structures.Every group of defect ground structure comprises two parallel slotted lines, every slotted line be shaped as dumbbell shape.Two groups of defect ground structures are symmetrical about central, transverse axis and the center longitudinal axis of described band pass filter.
The beneficial effect that adopts technique scheme to bring:
(1) the more traditional equilateral triangle cavity body filter of the utility model, only adopts 1/3rd equilateral triangular chamber bodies, has greatly reduced filter size, and has improved pass band width, meets better the requirement of modernization wireless communication system miniaturization.The utility model adopts substrate integrated waveguide technology, and structure is very compact, has reduced difficulty of processing, has reduced processing cost, in modern wireless communication systems, has a wide range of applications;
(2) input and output of the present utility model adopt 50 ohm microstrip line structures, without re-using any matching structure.On bottom metal layer, adopt defect ground structure technology fluting, to reach the object that suppresses to produce parasitic band.
Accompanying drawing explanation
Fig. 1 is the method schematic diagram that equilateral triangle cavity cuts into 1/3rd equilateral triangular chamber bodies.
Fig. 2 is 1/3rd equilateral triangular chamber body schematic diagrames.
Fig. 3 is that the three-dimensional of 1/3rd equilateral triangular chamber bodies dissects schematic diagram.
Fig. 4 is the structural representation of the band pass filter of the utility model based on 1/3rd equilateral triangle substrate integral waveguides.
Fig. 5 is the equivalent structure schematic diagram of band pass filter shown in Fig. 4 in emulation or in processing.
Fig. 6 is that the three-dimensional of the equivalent structure of filter shown in Fig. 5 dissects schematic diagram.
Fig. 7 is the schematic diagram of defect ground structure.
Fig. 8 is S parameters simulation oscillogram of the present utility model.
Label declaration in accompanying drawing: the 1st, top layer metallic layer, the 2nd, dielectric substrate, the 3rd, plated-through hole, the 4th, bottom metal layer, the 5th, defect ground structure.
Embodiment
Below with reference to accompanying drawing, technical scheme of the present invention is elaborated.
At resonant element described in technique scheme, be to be in fact split to form by equilateral-triangle resonance cavity.Equilateral triangle cavity cuts into the method schematic diagram of 1/3rd equilateral triangular chamber bodies as shown in Figure 1, equilateral-triangle resonance cavity comprises top layer metallic layer 1 from top to bottom successively, dielectric substrate 2(adopts Rogers 5880 dielectric-slabs, dielectric constant is 2.2, thickness is 0.8 millimeter) and bottom metal layer 4, on dielectric substrate, along its three limit, be uniform-distribution with plated-through hole 3.Equilateral-triangle resonance cavity is divided into three identical resonant elements along center to the vertical line section on three limits respectively.As shown in Figure 2, the structure of resonant element as shown in Figure 3 for the shape of the resonant element obtaining.
The structural representation of the band pass filter based on 1/3rd equilateral triangle substrate integral waveguides as shown in Figure 4, band pass filter comprises six resonant elements and two microstrip lines, each resonant element comprises a top-level metallic aspect, a underlying metal aspect and four sides, wherein there are two sides of plated-through hole 3 as electric wall, another two sides are as magnetic wall, six resonant element cross-couplings are a hexagon resonant cavity, the electric wall of adjacent resonant element is coupled by perceptual window, form hexagon resonant cavity, described two microstrip lines connect respectively hexagon resonant cavity, input and output as this band pass filter.
In emulation and actual processing, for convenient, filter construction shown in Fig. 4 can equivalence become structure shown in Fig. 5.
In the present embodiment, in hexagon resonant cavity, the adjacent magnetic wall of adjacent resonant element all at grade, just reaches magnetic coupling to the full extent.Hexagon resonant cavity is symmetrical about central, transverse axis and the center longitudinal axis of described band pass filter.Article two, the impedance of microstrip line is 50 ohm.Article two, microstrip line is symmetrical about central, transverse axis and the center longitudinal axis of described band pass filter.
The three-dimensional of filter equivalent structure dissects schematic diagram as shown in Figure 6, is etched with two groups of defect ground structures 5 on the bottom metal layer of hexagon resonant cavity.Every group of defect ground structure 5 comprises two parallel slotted lines, every slotted line be shaped as dumbbell shape, as shown in Figure 7.Two groups of defect ground structures 5 are symmetrical about central, transverse axis and the center longitudinal axis of described band pass filter.
S parameters simulation oscillogram of the present utility model as shown in Figure 8, abscissa is frequency (unit: GHz), ordinate is S parameter (unit: decibel), wherein, solid line represents the relation of reflection of electromagnetic wave coefficient and frequency, and dotted line represents the relation of electromagnetic transmission coefficient and frequency.By Tu Ke get, centre frequency is 7.53GHz, and three dB bandwidth is 5.64GHz ~ 10.06GHz, and in-band insertion loss is 2dB left and right, and return loss is greater than 15dB, illustrates that this filter has good band-pass behavior.
Above embodiment only, for explanation technological thought of the present invention, can not limit protection scope of the present invention with this, every technological thought proposing according to the present invention, and any change of doing on technical scheme basis, within all falling into protection range of the present invention.

Claims (8)

1. the band pass filter based on 1/3rd equilateral triangle substrate integral waveguides, it is characterized in that: described band pass filter comprises six resonant elements and two microstrip lines, each resonant element comprises top layer metallic layer from top to bottom successively, dielectric substrate and bottom metal layer, described top layer metallic layer, the plane quadrilateral that is shaped as mutual congruence of dielectric substrate and bottom metal layer, described plane quadrilateral comprises first side, Second Edge, the 3rd limit and the 4th limit, the angle of first side and Second Edge is 60 °, the 3rd limit is perpendicular to Second Edge, the 4th limit is perpendicular to first side, the angle on the 3rd limit and the 4th limit is 120 °, and on dielectric substrate along its first side and the Second Edge plated-through hole of evenly arranging, in four sides of resonant element, there are two sides of plated-through hole as electric wall, another two sides are as magnetic wall, six resonant element cross-couplings are a hexagon resonant cavity, the electric wall of adjacent resonant element is coupled by perceptual window, form aforementioned hexagonal shape resonant cavity, described two microstrip lines connect respectively hexagon resonant cavity, input and output as this band pass filter.
2. the band pass filter based on 1/3rd equilateral triangle substrate integral waveguides according to claim 1, is characterized in that: in described hexagon resonant cavity, the adjacent magnetic wall of adjacent resonant element all at grade.
3. according to the band pass filter based on 1/3rd equilateral triangle substrate integral waveguides described in claim 1 or 2, it is characterized in that: described hexagon resonant cavity is symmetrical about central, transverse axis and the center longitudinal axis of described band pass filter.
4. the band pass filter based on 1/3rd equilateral triangle substrate integral waveguides according to claim 1, is characterized in that: the impedance of described two microstrip lines is 50 ohm.
5. according to the band pass filter based on 1/3rd equilateral triangle substrate integral waveguides described in claim 1 or 2 or 4, it is characterized in that: described two microstrip lines are symmetrical about central, transverse axis and the center longitudinal axis of described band pass filter.
6. the band pass filter based on 1/3rd equilateral triangle substrate integral waveguides according to claim 1, is characterized in that: on the bottom metal layer of described hexagon resonant cavity, be etched with two groups of defect ground structures.
7. the band pass filter based on 1/3rd equilateral triangle substrate integral waveguides according to claim 6, is characterized in that: described every group of defect ground structure comprises two parallel slotted lines, every slotted line be shaped as dumbbell shape.
8. according to the band pass filter based on 1/3rd equilateral triangle substrate integral waveguides described in claim 6 or 7, it is characterized in that: described two groups of defect ground structures are symmetrical about central, transverse axis and the center longitudinal axis of described band pass filter.
CN201420241032.6U 2014-05-13 2014-05-13 Band pass filter based on one third equilateral triangle substrate integration waveguide Expired - Fee Related CN203895577U (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104659451A (en) * 2015-02-09 2015-05-27 南京邮电大学 Four-mode band-pass filter based on 1/3 equilateral triangular substrate integrated resonator
CN105070983A (en) * 2015-09-06 2015-11-18 哈尔滨工业大学 Folded substrate integrated waveguide wideband band-pass filter loaded with T-shaped defected ground
CN105119032A (en) * 2015-08-26 2015-12-02 南京邮电大学 Band-pass filter based on triangular substrate integrated resonator
CN105119032B (en) * 2015-08-26 2018-08-31 南京邮电大学 Bandpass filter based on triangle substrate integrated resonator
CN111463525A (en) * 2020-04-20 2020-07-28 南京邮电大学 Miniaturized third-order SD-HMSIW band-pass filter based on coplanar waveguide

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104659451A (en) * 2015-02-09 2015-05-27 南京邮电大学 Four-mode band-pass filter based on 1/3 equilateral triangular substrate integrated resonator
CN104659451B (en) * 2015-02-09 2017-08-25 南京邮电大学 The four modular belt bandpass filters based on 1/3 equilateral triangle substrate integrated resonator
CN105119032A (en) * 2015-08-26 2015-12-02 南京邮电大学 Band-pass filter based on triangular substrate integrated resonator
CN105119032B (en) * 2015-08-26 2018-08-31 南京邮电大学 Bandpass filter based on triangle substrate integrated resonator
CN105070983A (en) * 2015-09-06 2015-11-18 哈尔滨工业大学 Folded substrate integrated waveguide wideband band-pass filter loaded with T-shaped defected ground
CN105070983B (en) * 2015-09-06 2019-01-22 哈尔滨工业大学 Load the folded substrate integrated waveguide broad-band bandpass filter on T-type defect ground
CN111463525A (en) * 2020-04-20 2020-07-28 南京邮电大学 Miniaturized third-order SD-HMSIW band-pass filter based on coplanar waveguide

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EE01 Entry into force of recordation of patent licensing contract

Assignee: Jiangsu Nanyou IOT Technology Park Ltd.

Assignor: Nanjing Post & Telecommunication Univ.

Contract record no.: 2016320000210

Denomination of utility model: Band pass filter based on one third equilateral triangle substrate integration waveguide

Granted publication date: 20141022

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Record date: 20161114

LICC Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model
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EC01 Cancellation of recordation of patent licensing contract

Assignee: Jiangsu Nanyou IOT Technology Park Ltd.

Assignor: Nanjing Post & Telecommunication Univ.

Contract record no.: 2016320000210

Date of cancellation: 20180116

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20141022

Termination date: 20210513