CN104466316A - 2X wave band defect joint structure-half mode substrate integrated waveguide filter - Google Patents
2X wave band defect joint structure-half mode substrate integrated waveguide filter Download PDFInfo
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- CN104466316A CN104466316A CN201310547844.3A CN201310547844A CN104466316A CN 104466316 A CN104466316 A CN 104466316A CN 201310547844 A CN201310547844 A CN 201310547844A CN 104466316 A CN104466316 A CN 104466316A
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Abstract
The invention relates to a 2X wave band defect joint structure-half mode substrate integrated waveguide filter. The filter comprises a medium substrate and a metal surface mount device arranged on the medium substrate, wherein a plurality of through holes are formed in the medium substrate, the metal surface mount device comprises an input port microstrip line, an output port microstrip line and a half mode substrate integrated waveguide, the input port microstrip line and the output port microstrip line are opposite in position, the half mode substrate integrated waveguide is connected with the input port microstrip line and the output port microstrip line through microstrip-half mode substrate integrated waveguide transition metal lines, and the half mode substrate integrated waveguide comprises a plurality of single defected ground structure units, a plurality of nested defected ground structure units and holes communicated with the through holes in the medium substrate. The 2X wave band defect joint structure-half mode substrate integrated waveguide filter has the advantages that defected ground structures are formed on the half mode substrate integrated waveguide to serve as elementary units, and multiple stages of units are connected in a cascading mode to form the X wave band and 2X wave band defect joint structure-half mode substrate integrated waveguide filter. The 2X wave band defect joint structure-half mode substrate integrated waveguide filter has the advantages that the structure is compact, the mass production is easily achieved, the yield is high, the performance is stable, and the system integration is easily carried out.
Description
Technical field
The present invention relates to wireless communication technique field, refer more particularly to a kind of 2X wave band defect access node structure-half-modular substrate integral wave guide filter.
Background technology
Microwave and millimeter wave band pass filter is the significant components of communication system and radar system, its function seems particularly important at a wireless receiver, in addition, the key of many design problems and core in microwave band-pass filter or microwave and millimeter wave system, as frequency converter, frequency multiplier and multichannel communication etc.Electromagnetic spectrum is limited, must be distributed by different application; And filter both can be used for limiting the radiation of high-power transmitter in regulation frequency range, can be used for again preventing the interference that receiver is subject to beyond working band.Traditional microwave and millimeter wave metal waveguide and coated by dielectric metal waveguide can produce high quality factor, low-loss, high performance band pass filter, but first this filter processes more complicated, especially in microwave and millimeter wave frequency range, quite high machining accuracy is needed; Secondly production cost costly, because the price of metal waveguide and cavity is inherently very high; 3rd is that this filter is bulky, is difficult to inside radio frequency integrated circuit, obtain essence application.Therefore, in the urgent need to high-performance, volume is little, lightweight, quality factor are high, loss is little, low cost and be easy to integrated microwave and millimeter wave band pass filter, is beneficial to the design of radio frequency integrated circuit.
Summary of the invention
The object of this invention is to provide a kind of 2X wave band defect access node structure-half-modular substrate integral wave guide filter, to solve the above-mentioned deficiency of prior art.
The object of the invention is to be achieved through the following technical solutions:
The invention provides a kind of 2X wave band defect access node structure-half-modular substrate integral wave guide filter, this 2X wave band defect access node structure-half-modular substrate integral wave guide filter comprises: dielectric substrate and the metal patch be arranged on described dielectric substrate, wherein, described dielectric substrate is provided with multiple through hole, described metal patch comprises the relative input port microstrip line in position, output port microstrip line, and respectively by the half module substrate integrated wave guide that micro-band-half module substrate integrated wave guide transition metal line is connected with input port microstrip line and output port microstrip line, and the hole that described half module substrate integrated wave guide has multiple individual defect ground structure unit and nested defect ground structure unit and communicates with the through hole of described dielectric substrate.
Preferably, described individual defect ground structure unit comprises two symmetrical frame-type depressions with opening, and the opening direction of two frame-type depressions is relative; Described nested defect ground structure unit comprises multiple nested individual defect ground structure unit, and described nested defect ground structure unit is symmetrical structure.
Preferably, the number of described individual defect ground structure unit is two, and the number of described nested defect ground structure unit is one, and described nested defect ground structure unit is positioned at the centre of described two individual defect ground structure unit.
Preferably, described 2X wave band defect access node structure-half-modular substrate integral wave guide filter also comprises the coat of metal being arranged at one side relative with metal patch on described dielectric substrate.
Preferably, described through-hole wall is provided with copper plate.
Preferably, the sheet material of described dielectric substrate is Rogers's sheet material, and dielectric constant is 2.2, and sheet metal thickness is 0.254mm.
Preferably, this 2X wave band defect access node structure-half-modular substrate integral wave guide filter also comprises the Gold plated Layer being wrapped in described dielectric substrate and described metal patch.
Beneficial effect of the present invention is: by optionally removing surface metal on half module substrate integrated wave guide, forms defect ground structure.With defect ground structure as elementary cell, multi-level unit is cascaded into X-band 2X wave band defect access node structure-half-modular substrate integral wave guide filter.The structure that two defect ground structures that employing varies in size are nested.In 7.5 ~ 10GHz, insertion loss 1.06dB ~ 1.12dB, reflection coefficient reaches near-30dB, reaches more than 35dB to the suppression of second harmonic (15 ~ 20GHz).Adopt the processing of ordinary printed circuit-board processes, size: 29.5 × 9.00 × 0.33mm
3, compared to the metal waveguide class filter of same frequency range, compact conformation, is easy to large-scale production, and rate of finished products is high, stable performance.This 2X wave band defect access node structure-half-modular substrate integral wave guide filter belongs to planar structure, is easy to the system integration.
Accompanying drawing explanation
With reference to the accompanying drawings the present invention is described in further detail below.
Fig. 1 is the structural representation of 2X wave band defect access node structure-half-modular substrate integral wave guide filter that the embodiment of the present invention provides;
Fig. 2 is the structural representation of the individual defect ground structure unit that the embodiment of the present invention provides;
Fig. 3 is the structural representation of the nested defect ground structure unit that the embodiment of the present invention provides;
Fig. 4 is the analogue simulation design sketch of 2X wave band defect access node structure-half-modular substrate integral wave guide filter that the embodiment of the present invention provides.
In figure:
10, dielectric substrate; 20, through hole; 30, metal patch; 31, micro-band-half module substrate integrated wave guide transition metal line; 32, half module substrate integrated wave guide; 33, nested defect ground structure unit; 33, individual defect ground structure unit; 331, frame-type depression.
Embodiment
In order to improve the performance of 2X wave band defect access node structure-half-modular substrate integral wave guide filter, reduce the volume of 2X wave band defect access node structure-half-modular substrate integral wave guide filter, the invention provides a kind of 2X wave band defect access node structure-half-modular substrate integral wave guide filter.In the inventive solutions; by adopting slab construction and multiple hollowly construction unit and nested dimples ground structure unit, improve the performance of 2X wave band defect access node structure-half-modular substrate integral wave guide filter and reducing the volume of 2X wave band defect access node structure-half-modular substrate integral wave guide filter.For making the object, technical solutions and advantages of the present invention clearly, for nonrestrictive embodiment, the present invention is described in further detail below.
As shown in Figure 1, a kind of 2X wave band defect access node structure-half-modular substrate integral wave guide filter of the embodiment of the present invention, this 2X wave band defect access node structure-half-modular substrate integral wave guide filter comprises: dielectric substrate 10 and the metal patch 30 be arranged on dielectric substrate 10, wherein, dielectric substrate 10 is provided with multiple through hole 20, metal patch 30 comprises the relative input port microstrip line in position, output port microstrip line, and respectively by the half module substrate integrated wave guide 32 that micro-band-half module substrate integrated wave guide transition metal line 31 is connected with input port microstrip line and output port microstrip line, and the hole that half module substrate integrated wave guide 32 has multiple individual defect ground structure unit 34 and nested defect ground structure unit 33 and communicates with the through hole 20 of dielectric substrate 10.
This 2X wave band defect access node structure-half-modular substrate integral wave guide filter, this X-band defect ground structure-half-modular substrate integral wave guide filter is divided into three-decker, be metal patch 30 from top to bottom, the coat of metal of dielectric substrate 10 and bottom surface, input port microstrip line is respectively equipped with at the two ends of half-modular substrate integral wave guide filter, output port microstrip line, the multiple through holes 20 established in the side of the dielectric substrate 10 of half-modular substrate integral wave guide filter form the sidewall of half-modular substrate integral wave guide filter, the plurality of through hole 20 is in several rows of row, and through hole 20 is plated-through hole 20, the inwall of through hole 20 is provided with copper plate, and the coat of metal of connection metal paster 30 and bottom surface, the metal patch 30 of half-modular substrate integral wave guide filter is optionally provided with multiple defect ground structure, and adopt the mode of three-stage cascade, the primary defect ground structure unit being wherein positioned at centre position have employed nested mode, and the defect ground structure being positioned at both sides is individual defect ground structure unit 34.
Concrete, in by defect ground structure and half module substrate integrated wave guide combine with technique, defect ground structure on conventional microstrip line is improved, it is made to be applied on substrate integration wave-guide easily: as shown in Figure 2, traditional complementary open-loop resonator is improved, two complementary open-loop resonators are removed one, be reduced to an independent split ring unit, and by this split ring mid portion metal removal, form two symmetrical frame-type depressions 331 with opening, and the opening direction of two frame-type depressions 331 is relative, thus form a counterpart semi-ring, thus change electromagnetic wave propagation, not only simplify the course of processing, and meet performance requirement, secondly, adopt the mode of three-stage cascade, strengthen passband and the sideband characteristic of 2X wave band defect access node structure-half-modular substrate integral wave guide filter, as shown in Figure 3, in order to further minification, adopt the mode that two unit varied in size are nested, namely nested defect ground structure unit 33 comprises multiple nested individual defect ground structure unit 34, and nested defect ground structure unit 33 is symmetrical structure.
2X wave band defect access node structure-half-modular substrate integral wave guide filter that the embodiment of the present invention provides, by optionally removing surface metal on half module substrate integrated wave guide, forms defect ground structure.With defect ground structure as elementary cell, multi-level unit is cascaded into X-band filter.The structure that two defect ground structures that employing varies in size are nested.As shown in Figure 4, in 7.5 ~ 10GHz, insertion loss 1.06dB ~ 1.12dB, reflection coefficient reaches near-30dB, reaches more than 35dB to the suppression of second harmonic (15 ~ 20GHz).Adopt the processing of ordinary printed circuit-board processes, size: 29.5 × 9.00 × 0.33mm
3, compared to the metal waveguide class filter of same frequency range, compact conformation, is easy to large-scale production, and rate of finished products is high, stable performance.This 2X wave band defect access node structure-half-modular substrate integral wave guide filter belongs to planar structure, is easy to the system integration, requires that harsh application scenarios is full of attraction for microwave&millimeter-wave IC design with to dimensional weight.At radar system and digital microwave communication system, as aspects such as LMDS, MMDS, there is application prospect widely.Compared to metal rectangular waveguide filter, 2X wave band defect access node structure-half-modular substrate integral wave guide filter that the embodiment of the present invention provides is easy to integrated in the design of microwave and millimeter wave Circuits and Systems.Because this 2X wave band defect access node structure-half-modular substrate integral wave guide filter is planarized structure, realize on dielectric substrate 10 completely, by the size regulating the dielectric constant of dielectric substrate 10 and the face shaping of defect ground structure and size can regulate this 2X wave band defect access node structure-half-modular substrate integral wave guide filter very easily, thus it is integrated to realize with other microwave and millimeter wave circuit preferably; Structure is simple, is easy to processing.Because this structure forms 2X wave band defect access node structure-half-modular substrate integral wave guide filter at the direct etching defect ground structure of half module substrate integrated wave guide upper surface, form cavity without overpunch, machining accuracy is high, simple; There is higher quality factor, lower loss.This is because this structure has the structure and characteristics similar with metal rectangular waveguide, so relative to microstrip circuit, its quality factor are better, and loss is lower; Bandwidth is comparatively large, and applied range, not only can be used for all kinds of radar systems of X-band, can also be used for the digital microwave communication system of 8GHz frequency range.
Dielectric substrate 10 wherein adopts conventional microwave printed circuit board process to process, and preferably sheet material is Rogers5880, and dielectric constant is 2.2, and sheet metal thickness is 0.254mm, and after adding Outside Dimensions, final size is: 29.5 × 9.00 × 0.33mm
3.Have less volume, in addition, this 2X wave band defect access node structure-half-modular substrate integral wave guide filter also comprises the Gold plated Layer being wrapped in dielectric substrate 10 and metal patch 30.Thus make the internal structure of whole 2X wave band defect access node structure-half-modular substrate integral wave guide filter obtain protection.
The present invention is not limited to above-mentioned preferred forms; anyone can draw other various forms of products under enlightenment of the present invention; no matter but any change is done in its shape or structure; every have identical with the application or akin technical scheme, all drops within protection scope of the present invention.
Claims (7)
1. 2X wave band defect access node structure-half-modular substrate integral wave guide filter, it is characterized in that, comprise: dielectric substrate and the metal patch be arranged on described dielectric substrate, wherein, described dielectric substrate is provided with multiple through hole, described metal patch comprises the relative input port microstrip line in position, output port microstrip line, and respectively by the half module substrate integrated wave guide that micro-band-half module substrate integrated wave guide transition metal line is connected with input port microstrip line and output port microstrip line, and the hole that described half module substrate integrated wave guide has multiple individual defect ground structure unit and nested defect ground structure unit and communicates with the through hole of described dielectric substrate.
2. 2X wave band defect access node structure-half-modular substrate integral wave guide filter according to claim 1, is characterized in that, described individual defect ground structure unit comprises two symmetrical frame-type depressions with opening, and the opening direction of two frame-type depressions is relative; Described nested defect ground structure unit comprises multiple nested individual defect ground structure unit, and described nested defect ground structure unit is symmetrical structure.
3. 2X wave band defect access node structure-half-modular substrate integral wave guide filter according to claim 2; it is characterized in that; the number of described individual defect ground structure unit is two; the number of described nested defect ground structure unit is one, and described nested defect ground structure unit is positioned at the centre of described two individual defect ground structure unit.
4. 2X wave band defect access node structure-half-modular substrate integral wave guide filter according to claim 1, is characterized in that, also comprise the coat of metal being arranged at one side relative with metal patch on described dielectric substrate.
5. 2X wave band defect access node structure-half-modular substrate integral wave guide filter according to claim 1, it is characterized in that, described through-hole wall is provided with copper plate.
6. 2X wave band defect access node structure-half-modular substrate integral wave guide filter according to claim 1, it is characterized in that, the sheet material of described dielectric substrate is Rogers's sheet material, and dielectric constant is 2.2, and sheet metal thickness is 0.254mm.
7. the 2X wave band defect access node structure-half-modular substrate integral wave guide filter according to any one of claim 1-6, is characterized in that, also comprise the Gold plated Layer being wrapped in described dielectric substrate and described metal patch.
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| CN201310547844.3A CN104466316B (en) | 2013-11-08 | 2013-11-08 | A kind of X-band defect ground structure half-modular substrate integral wave guide filter |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105449322A (en) * | 2015-11-30 | 2016-03-30 | 超视距成都科技有限责任公司 | Millimeter wave dual-passband filter and design method therefor |
| CN106898848A (en) * | 2017-03-28 | 2017-06-27 | 南京邮电大学 | A kind of ultra-wide stop-band low-pass filter of H types open circuit minor matters combination palisading type defect ground structure |
| CN107275728A (en) * | 2017-06-20 | 2017-10-20 | 成都旭思特科技有限公司 | A kind of resonance filter of DGS structures |
| CN112768852A (en) * | 2020-12-28 | 2021-05-07 | 杭州电子科技大学 | Folded substrate integrated waveguide phase shifter with CSRR loaded periodically |
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| CN1925211A (en) * | 2006-09-22 | 2007-03-07 | 东南大学 | Half-modular substrate integral wave guide filter |
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| JP2008131506A (en) * | 2006-11-22 | 2008-06-05 | Nec Tokin Corp | High surface impedance structure, antenna unit, and rfid tag |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105449322A (en) * | 2015-11-30 | 2016-03-30 | 超视距成都科技有限责任公司 | Millimeter wave dual-passband filter and design method therefor |
| CN105449322B (en) * | 2015-11-30 | 2018-01-23 | 超视距成都科技有限责任公司 | Millimeter wave double-passband filter and its design method |
| CN106898848A (en) * | 2017-03-28 | 2017-06-27 | 南京邮电大学 | A kind of ultra-wide stop-band low-pass filter of H types open circuit minor matters combination palisading type defect ground structure |
| CN106898848B (en) * | 2017-03-28 | 2019-01-18 | 南京邮电大学 | A kind of ultra-wide stop-band low-pass filter of H-type open circuit minor matters combination palisading type defect ground structure |
| CN107275728A (en) * | 2017-06-20 | 2017-10-20 | 成都旭思特科技有限公司 | A kind of resonance filter of DGS structures |
| CN112768852A (en) * | 2020-12-28 | 2021-05-07 | 杭州电子科技大学 | Folded substrate integrated waveguide phase shifter with CSRR loaded periodically |
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| CN104466316B (en) | 2017-07-21 |
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