CN103545584B - A kind of filter with low insertion loss broadband band-pass filter - Google Patents

A kind of filter with low insertion loss broadband band-pass filter Download PDF

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Publication number
CN103545584B
CN103545584B CN201310527512.9A CN201310527512A CN103545584B CN 103545584 B CN103545584 B CN 103545584B CN 201310527512 A CN201310527512 A CN 201310527512A CN 103545584 B CN103545584 B CN 103545584B
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China
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metal patch
filter
dielectric substrate
interdigital
etched
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CN103545584A (en
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黄杰
张中华
李光林
陈志林
赵倩
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Southwest University
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Southwest University
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Abstract

The invention discloses a kind of filter with low insertion loss broadband band-pass filter, comprise medium substrate, its key is: dielectric substrate upper surface is provided with the first metal patch, and lower surface is provided with the second metal patch; First metal patch is carved with three interdigital structures, is etched with rectangle above the second interdigital structure, be etched with incoming feeder above the outside that the first interdigital structure and third fork refer to structure respectively and export feed line, two feed lines are all on dielectric substrate; Second metal patch is etched with complementary openings resonator defect ground structure; On first metal patch, dielectric substrate and the second metal patch base, also correspondence is provided with row's metal throuth hole.The present invention has the advantages that high pass and low-pass characteristic intersect, and not only can control the Out-of-band rejection of filter low-frequency range, also can improve the Out-of-band rejection of the high band of filter, make filter have the advantages such as low differential loss, selectivity is high, Out-of-band rejection is good; Its design has more flexibility, for designing filter provides a kind of new mentality of designing.

Description

A kind of filter with low insertion loss broadband band-pass filter
Technical field
Patent of the present invention relates to microwave and millimeter wave filter field, particularly relates to the half-modular substrate integral wave guide filter of filter with low insertion loss.
Background technology
Filter is the basic composition unit in microwave circuit, and its performance quality directly has influence on the performance of whole system.The planar microstrip line structure filter of traditional filter is easy of integration, but area occupied is large, loss large, Q value is low.Metal waveguide structure filter has that Insertion Loss is little, selectivity is high, external sort factor high, but volume is large, processing and debugging is difficult, and not easy of integration.
Based on the filter of half module substrate integrated wave guide technology;, selectivity advantages of higher high at reservation metal waveguide structure filter external sort factor; the volume also with planar microstrip line structure filter is little, lightweight, cost is low, easy processing and integrated advantage, is being paid close attention to widely in recent years.The design of filter of this structure is flexible and changeable, and can realize by the PCB technology of standard, fabrication cycle is short.Because frequency spectrum resource is limited, propose more and more higher requirement to the selectivity of Modern Communication System median filter, conventional method is that the Out-of-band rejection realizing filter is good, selectivity is high by introducing transmission zero.
Summary of the invention
The object of this invention is to provide a kind of filter with low insertion loss broadband band-pass filter based on half module substrate integrated wave guide and complementary openings resonant ring defect ground structure, the advantage of planar microstrip line structure and metal waveguide structure can be taken into account.
To achieve these goals, by the following technical solutions: a kind of filter with low insertion loss broadband band-pass filter, comprises medium substrate, and its characteristic is: described dielectric substrate upper surface is provided with the first metal patch, and dielectric substrate lower surface is provided with the second metal patch; Described first metal patch is etched with from left to right successively the first interdigital structure, the second interdigital structure and third fork and refers to structure, the top position of the second interdigital structure is etched with rectangle, be etched with incoming feeder above the outside that first interdigital structure and third fork refer to structure respectively and export feed line, described incoming feeder and export feed line all on dielectric substrate; Described second metal patch is etched with complementary openings resonant ring defect ground structure; On the base of described first metal patch, dielectric substrate and the second metal patch, also correspondence is provided with row's metal throuth hole, is used as the inductance of connection first metal patch and the second metal patch.
Described first interdigital structure and third fork refer to that the direction of structure is vertical with the transmission direction of signal, and both are about the central point of dielectric substrate; The direction of the second interdigital structure is consistent with the transmission direction of signal; The central point of above-mentioned three interdigital structures is located on the same line.
Described complementary openings resonant ring defect ground structure comprises two annular slots, and described two gaps have two openings that direction is contrary, the width in described gap is identical; The described central point of complementary openings resonant ring defect ground structure and the point coincides of dielectric substrate.
The central point of described rectangle and the central point of dielectric substrate are located on the same line.
The present invention has the advantages that high pass and low-pass characteristic intersect, and not only can control the Out-of-band rejection of filter low-frequency range, also can improve the Out-of-band rejection of the high band of filter, make filter have the advantages such as low differential loss, selectivity is high, Out-of-band rejection is good; Its structure has more flexibility in design, for designing filter provides a kind of new mentality of designing.
Accompanying drawing explanation
Fig. 1 is the stacking chart of the first metal patch and the second metal patch in the present invention;
Fig. 2 is the profile along A-A line in Fig. 1;
Fig. 3 is the structural representation of the first metal patch in Fig. 1;
Fig. 4 is the structural representation of the second metal patch in Fig. 1;
Fig. 5 is frequency response curve of the present invention.
Embodiment
Below in conjunction with instantiation and accompanying drawing, the present invention is described in further detail.
As shown in Figures 1 to 5, a kind of filter with low insertion loss broadband band-pass filter, comprises medium substrate 1, and dielectric substrate 1 upper surface is provided with the first metal patch 1a, and lower surface is provided with the second metal patch 1b; Described first metal patch 1a is etched with from left to right successively the first interdigital structure 2, second interdigital structure 3 and third fork refers to structure 4, the top position of the second interdigital structure 2 is etched with rectangle 7, be etched with incoming feeder 8 above the outside that first interdigital structure 2 and third fork refer to structure 4 respectively and export feed line 9, described incoming feeder 8 and export feed line equal 9 on dielectric substrate 1; Described second metal patch 1b is etched with complementary openings resonant ring defect ground structure 5; On the base of described first metal patch 1a, dielectric substrate 1 and the second metal patch 1b, also correspondence is provided with row's metal throuth hole 6, is used as the inductance of connection first metal patch la and the second metal patch lb.
Described dielectric substrate 1 adopts Rogers 5880.
With third fork, described first interdigital structure 2 refers to that the direction of structure 4 is vertical with the transmission direction of signal, and both are about the central point of dielectric substrate; The direction of the second interdigital structure 3 is consistent with the transmission direction of signal; The central point of above-mentioned three interdigital structures 2,3 and 4 is located on the same line.
The interdigital length that described first interdigital structure 2 and third fork refer in structure 4 be 4mm, wide be 0.35mm; The interdigital length of the second interdigital structure 3 be 4.6mm, wide be 0.3mm; Described interdigital between gap be 0.2mm.The length of gap 5a that second metal patch 1b etches is the length of 12.75mm, 5b is 11.75mm, and gap 5a and 5b is wide is 0.25mm, and the opening 5c place metal of gap 5a and 5b is wide is 0.25mm.On first metal patch 1a the rectangle 7 of etching long for 5.72mm, wide be 1.61mm.Incoming feeder 8 and to export the wide of feed line 9 be 1.5mm, the center of two feed lines 8 and 9 from the top margin of the first metal patch 1a apart from being 1.25mm.
Described complementary openings resonant ring defect ground structure 5 comprises two annular slot 5a and 5b, and described two gap 5a and 5b have two opening 5c that direction is contrary, the width of described gap 5a with 5b is identical; The described central point of complementary openings resonant ring defect ground structure 5 and the point coincides of dielectric substrate.
The central point of described rectangle 7 and the center of dielectric substrate are point-blank.
In the specific embodiment of the invention, three interdigital structures are by 5 interdigital formations, and wherein, the first interdigital structure and third fork refer to that structure has low-pass characteristic, and the second interdigital structure then has high pass characteristic, form band pass filter by three interdigital structure cascades.Refer to by changing the first interdigital structure and third fork the interdigital number of structure, length, width and interdigital between gap width, the low-pass characteristic of broadband band-pass filter can be controlled; And by the gap width of the interdigital number of change second interdigital structure, length, width and interdigital, then can control the high pass characteristic of broadband band-pass filter; By the Out-of-band rejection of all right control cincture bandpass filter low-frequency range of the length and width of change rectangle.
Additionally using defect ground structure technology in the present invention, by etching a complementary openings resonant ring defect ground structure on the second metal patch, providing a transmission zero, be used for improving the Out-of-band rejection of broadband band-pass filter high band, improve selectivity.
Incoming feeder in the present invention and output feed line can exchange arbitrarily.
Fig. 5 is the frequency response curve of testing the specific embodiment of the invention drawn, in this figure, curve S 21 is signals from incoming feeder port to the transfer curve exporting feeder port, and curve S 11 is that signal is from incoming feeder port to the coverage diagram exporting feeder port transmitting procedure middle port.The frequency response of this filter as seen from the figure, wherein, the centre frequency of passband is 6GHz, Insertion Loss 0.717dB in passband, and return loss is greater than 14dB, and its passband three dB bandwidth is 17.8%, is with outer loss to be greater than 30dB; Level and smooth in band, the loss of signal is low.
The present invention has the advantages that high pass and low-pass characteristic intersect, and not only can control the Out-of-band rejection of filter low-frequency range, also can improve the Out-of-band rejection of the high band of filter, make filter have the advantages such as low differential loss, selectivity is high, Out-of-band rejection is good; Its structure has more flexibility in design, for designing filter provides a kind of new mentality of designing.

Claims (3)

1. a filter with low insertion loss broadband band-pass filter, comprises dielectric substrate, and its characteristic is: described dielectric substrate upper surface is provided with the first metal patch, and dielectric substrate lower surface is provided with the second metal patch; Described first metal patch is etched with from left to right successively the first interdigital structure, the second interdigital structure and third fork and refers to structure, the top position of the second interdigital structure etches away a rectangle, be etched with incoming feeder above the outside that first interdigital structure and third fork refer to structure respectively and export feed line, described incoming feeder and export feed line all on dielectric substrate; Position corresponding with described second interdigital structure on described second metal patch is etched with complementary openings resonant ring defect ground structure; On the base of described first metal patch, dielectric substrate and the second metal patch, also correspondence is provided with row's metal throuth hole, is used as the inductance of connection first metal patch and the second metal patch;
Described first interdigital structure and third fork refer to that the direction of structure is vertical with the transmission direction of signal, and both are about the central point of dielectric substrate; The direction of the second interdigital structure is consistent with the transmission direction of signal; The central point of above-mentioned three interdigital structures is located on the same line.
2. filter with low insertion loss broadband band-pass filter according to claim 1, it is characterized in that: described complementary openings resonant ring defect ground structure comprises two annular slots, described two annular slots have two openings that direction is contrary, the width of described annular slot is identical; The described central point of complementary openings resonant ring defect ground structure and the point coincides of dielectric substrate.
3. filter with low insertion loss broadband band-pass filter according to claim 1, is characterized in that: the central point of described rectangle and the central point of dielectric substrate are located on the same line.
CN201310527512.9A 2013-10-31 2013-10-31 A kind of filter with low insertion loss broadband band-pass filter Expired - Fee Related CN103545584B (en)

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CN106404849B (en) * 2015-01-22 2019-04-26 江西师范大学 The method of sensor detection gas based on nano material
CN106099278B (en) 2016-06-16 2019-02-19 华为技术有限公司 Resonant element and filter
CN114843755B (en) * 2022-05-20 2023-09-08 电子科技大学重庆微电子产业技术研究院 Substrate integrated waveguide slot array filter antenna

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5327108A (en) * 1991-03-12 1994-07-05 Motorola, Inc. Surface mountable interdigital block filter having zero(s) in transfer function
JP2007013368A (en) * 2005-06-29 2007-01-18 National Institute Of Information & Communication Technology Bandpass filter
CN101276954A (en) * 2007-03-29 2008-10-01 株式会社Ntt都科摩 Coplanar resonator and coplanar waveguide filter using the same
CN101471479A (en) * 2007-12-26 2009-07-01 中国科学院电子学研究所 Zero order resonator, narrow band filter and optimum design method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5327108A (en) * 1991-03-12 1994-07-05 Motorola, Inc. Surface mountable interdigital block filter having zero(s) in transfer function
JP2007013368A (en) * 2005-06-29 2007-01-18 National Institute Of Information & Communication Technology Bandpass filter
CN101276954A (en) * 2007-03-29 2008-10-01 株式会社Ntt都科摩 Coplanar resonator and coplanar waveguide filter using the same
CN101471479A (en) * 2007-12-26 2009-07-01 中国科学院电子学研究所 Zero order resonator, narrow band filter and optimum design method

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