CN103390784B - Miniaturized substrate integration waveguide duplexer - Google Patents
Miniaturized substrate integration waveguide duplexer Download PDFInfo
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- CN103390784B CN103390784B CN201310308524.2A CN201310308524A CN103390784B CN 103390784 B CN103390784 B CN 103390784B CN 201310308524 A CN201310308524 A CN 201310308524A CN 103390784 B CN103390784 B CN 103390784B
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Abstract
The invention discloses a miniaturized substrate integration waveguide duplexer which comprises a first metal copper coating layer, a first dielectric layer, a second metal copper coating layer, a second dielectric layer, a third metal copper coating layer, a third dielectric layer and a fourth metal copper coating layer which are stacked from the top down sequentially, wherein a dual-mode resonant cavity and triangular resonant cavities are defined by metallized through hole arrays; the dual-mode resonant cavity is connected with the triangular resonant cavities by coupling slots; the triangular resonant cavities are connected mutually by coupling windows; and a microstrip line structure is used for input and output. The duplexer can be used for microwave and millimeter wave communication systems, and has the advantages that the duplexer is suitable for system miniaturization, and is light in weight, low in cost, easy to integrate and fast in processing cycle.
Description
Technical field
The invention belongs to microwave and millimeter wave passive device technical field, particularly relate to the substrate integration waveguide duplexer in microwave and millimeter wave passive device.
Background technology
Along with the fast development of Modern Communication System, the function of microwave and millimeter wave circuit becomes increasingly complex, requirement on electric performance is more and more higher, simultaneously also towards the future development of miniaturization, lightweight, low cost.This development trend requires to be formed in order to the commercialization adapting to microwave and millimeter wave circuit.And substrate integration wave-guide produces just under these circumstances a kind ofly has low-loss, high power capacity, low cost, be easy to integrated transmission line structure, utilizes this technology can produce the microwave and millimeter wave devices such as high performance filter, antenna, duplexer.
Usual use duplexer realizes launching and receiving and shares common antenna, thus reaches the object reducing costs and reduce system bulk.In traditional design, two filters that the T junction that duplexer normally carries out impedance matching by connects are formed, and one of them filter is operated in transmit frequency band, and another filter is operated in reception frequency range.Rational T junction will meet impedance matching requirements between port and insulation request simultaneously.But T junction can occupy very large space usually, be unfavorable for the miniaturization of duplexer.On the other hand, mostly traditional duplexer being operated in high band is to be made up of the metallic cavity of machining, and therefore its processing cost is high, and the cycle is long, and volume is large, and Heavy Weight is not easy of integration.Conventional diplexer has shortcomings, needs improvement badly.
Summary of the invention
The object of the invention is to propose a kind of miniaturized substrate integrated waveguide duplexer, overcome the shortcoming that existing duplexer volume is large, processing cost is high, not easy of integration.
Technical scheme of the present invention is: a kind of miniaturized substrate integrated waveguide duplexer, comprises the first metal copper clad layers, first medium layer, the second metal copper clad layers, second dielectric layer, the 3rd metal copper clad layers, the 3rd dielectric layer, the 4th metal copper clad layers that stack gradually from the top down; Described plated-through hole array has run through the first metal copper clad layers, first medium layer, the second metal copper clad layers define the identical triangle resonant cavity of size one and triangle resonant cavity two, and these two triangle resonant cavitys are isosceles right triangle; The plated-through hole that described plated-through hole array and two carry out perturbation has run through the second metal copper clad layers, second dielectric layer, the 3rd metal copper clad layers define a foursquare bimodulus resonant cavity, and two plated-through holes carrying out perturbation are positioned on foursquare diagonal; Described plated-through hole array has run through the 3rd metal copper clad layers, the 3rd dielectric layer, the 4th metal copper clad layers define the identical triangle resonant cavity of size three and triangle resonant cavity four, and these two triangle resonant cavitys are isosceles right triangle; The plated-through hole array be positioned at below the microstrip line of the 3rd metal level, the coupling slot of microstrip line both sides, microstrip line interrupts the window formed, the common input port forming duplexer, and one end of input port is connected with square bimodulus resonant cavity; The plated-through hole array be positioned at below the microstrip line of the first metal layer, the coupling slot of microstrip line both sides, microstrip line interrupts the window formed, and jointly forms duplexer output port, and one end of this port is connected with triangle resonant cavity one; The plated-through hole array be positioned at below the microstrip line of the 4th metal level, the coupling slot of microstrip line both sides, microstrip line interrupts the window formed, and jointly forms another output port of duplexer, and one end of this port is connected with triangle resonant cavity three.
Further, triangle resonant cavity one is adjacent with triangle resonant cavity two hypotenuse, and the plated-through hole of their juncture areas interrupts, and forms coupling window; Triangle resonant cavity three is adjacent with triangle resonant cavity four hypotenuse, and the plated-through hole of their juncture areas interrupts, and forms coupling window.
Further, square bimodulus resonant cavity is connected with triangle resonant cavity two by the rectangle coupling slot in the second metal copper clad layers, be connected with triangle resonant cavity four by the rectangle coupling slot in the 3rd metal copper clad layers, these two rectangle coupling slots are parallel with two diagonal of square bimodulus resonant cavity respectively along the direction on long limit.
Advantage of the present invention and beneficial effect:
(1) compare and traditional duplexer, the present invention has the advantage of compact conformation.On the one hand, by using public resonant element to replace T junction, public resonant element can not only provide resonance, can also eliminate the area shared by T junction, and circuit size is reduced.On the other hand, use stepped construction to be piled up by resonant element, compared with use planar structure, dimension reduction is a lot;
(2) duplexer of the present invention carrys out production and processing owing to adopting printed circuit board technology, and traditional duplexer adopts machining to form, and therefore duplexer cost of the present invention is lower, weight is lighter, the process-cycle is fast, be easy to integrated;
Accompanying drawing explanation
Fig. 1 is that general structure of the present invention launches schematic diagram
Fig. 2 is the schematic top plan view of general structure of the present invention
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be further described: as shown in Figure 1, miniaturized substrate integrated waveguide duplexer, it is characterized in that, comprise the first metal copper clad layers 1, first medium layer 2, second metal copper clad layers 3, second dielectric layer 4, the 3rd metal copper clad layers 5, the 3rd dielectric layer 6, the 4th metal copper clad layers 7 that stack gradually from the top down; Described plated-through hole array 81 has run through the first metal copper clad layers 1, first medium layer 2, second metal copper clad layers 3 defines the identical triangle resonant cavity of size 1 and triangle resonant cavity 2 24, and these two triangle resonant cavitys are isosceles right triangle; The plated-through hole 42 that described plated-through hole array 82 and two carry out perturbation has run through the second metal copper clad layers 3, second dielectric layer 4, the 3rd metal copper clad layers 5 define the plated-through hole 42 that a foursquare bimodulus resonant cavity 41, two carries out perturbation and be positioned on foursquare diagonal; Described plated-through hole array 83 has run through the 3rd metal copper clad layers 5, the 3rd dielectric layer 6, the 4th metal copper clad layers 7 define the identical triangle resonant cavity of size 3 62 and triangle resonant cavity 4 64, and these two triangle resonant cavitys are isosceles right triangle; The plated-through hole array be positioned at below the microstrip line 51 of the 3rd metal level, the coupling slot 52 of microstrip line both sides, microstrip line interrupts the window 43 formed, the common input port forming duplexer, and one end of input port is connected with square bimodulus resonant cavity 41; The plated-through hole array be positioned at below the microstrip line 11 of the first metal layer, the coupling slot 12 of microstrip line both sides, microstrip line interrupts the window 21 formed, and jointly forms duplexer output port, and one end of this port is connected with triangle resonant cavity 1; The plated-through hole array be positioned at below the microstrip line 71 of the 4th metal level, the coupling slot 72 of microstrip line both sides, microstrip line interrupts the window 61 formed, and jointly forms another output port of duplexer, and one end of this port is connected with triangle resonant cavity 3 62.
Further, triangle resonant cavity 1 is adjacent with triangle resonant cavity 2 24 hypotenuse, and the plated-through hole of their juncture areas interrupts, and forms coupling window 23; Triangle resonant cavity 3 62 is adjacent with triangle resonant cavity 4 64 hypotenuse, and the plated-through hole of their juncture areas interrupts, and forms coupling window 63.
Further, square bimodulus resonant cavity 41 is connected with triangle resonant cavity 2 24 by the rectangle coupling slot 31 in the second metal copper clad layers 3, be connected with triangle resonant cavity 4 64 by the rectangle coupling slot 53 in the 3rd metal copper clad layers 5, these two rectangle coupling slots are parallel with two diagonal of square bimodulus resonant cavity 41 respectively along the direction on long limit.
The principle of technical scheme of the present invention is: square bimodulus resonant cavity 41 can two frequency resonances, when perturbation through hole 42 moves on the diagonal of bimodulus resonant cavity 41, can change a resonance frequency of bimodulus resonant cavity 41, another resonance frequency is constant.Two passband central frequencies at duplexer are produced resonance by the signal entering bimodulus resonant cavity 41 from microstrip line 51, one of them resonance frequency is identical with the resonance frequency of 24 with triangle resonant cavity 22, and another resonance frequency is identical with the resonance frequency of 64 with triangle resonant cavity 62.So a road signal enters triangle resonant cavity 2 24 by square bimodulus resonant cavity 41 by coupling slot 31, then enters triangle resonant cavity 1 through coupling window 23, is finally exported by microstrip line 11.Another road signal then enters triangle resonant cavity 4 64 by square bimodulus resonant cavity 41 by coupling slot 53, then enters triangle resonant cavity 3 62 through coupling window 63, is finally exported by microstrip line 71.By controlling coupling slot 31, the size of coupling window 23 can control the bandwidth of a wherein road signal passband, and control coupling slot 53, bandwidth that the size of coupling window 63 can control another road signal passband.The size of coupling slot 52,12,72 can control the input and output quality factor of filter.
For further illustrating the exploitativeness of technique scheme, provide a specific design example below, a miniaturized substrate integrated waveguide duplexer, the low channel of design is operated in 8GHz, and hf channel is operated in 9GHz, and two bandwidth chahnels are 0.33GHz.Dielectric substrate uses thickness to be 0.8mm, and dielectric constant is the F4B substrate of 2.55.The diameter of selected plated-through hole is 0.8mm.Fig. 2 middle port A is input port, and port B and port C is two output ports, and the geometric parameter value of corresponding duplexer is as follows: a
1=27.64 mm, a
2=24.5 mm, w=2.3 mm, w
1=6.03 mm, w
2=5.73 mm, l
1=4.5 mm, l
2=4.7 mm, l
3=3.5 mm, t=5.85 mm, p
1=1.02 mm, p
2=1 mm, p
3=1.1 mm, p
4=1.11 mm, s
1=1.5 mm, s
2=1 mm, s
3=1.5 mm, s
4=4.45 mm, s
5=1 mm, s
6=4.4 mm, s
7=1.06 mm, d
1=2.33 mm, d
2=1.34 mm.Test result shows, the centre frequency of this duplexer two path filters is respectively 8.02GHz and 9.08GHz, and corresponding bandwidth is 0.293GHz and 0.326GHz, is respectively 2.86dB and 3.04dB at the insertion loss at centre frequency place.From 7GHz to 10GHz, its isolation is greater than 40dB.
Those of ordinary skill in the art will appreciate that, embodiment described here is to help reader understanding's principle of the present invention, should be understood to that protection scope of the present invention is not limited to so special statement and embodiment.Those of ordinary skill in the art can make according to these technology disclosed by the invention enlightenment and variously not depart from other various concrete distortion and combination of the present invention, and these distortion and combination are still in protection scope of the present invention.
Claims (3)
1. a miniaturized substrate integrated waveguide duplexer, is characterized in that: the first metal copper clad layers (1) stacked gradually from the top down, first medium layer (2), the second metal copper clad layers (3), second dielectric layer (4), the 3rd metal copper clad layers (5), the 3rd dielectric layer (6), the 4th metal copper clad layers (7); First plated-through hole array (81) has run through the first metal copper clad layers (1), first medium layer (2), the second metal copper clad layers (3) define the identical triangle resonant cavity of size one (22) and triangle resonant cavity two (24), and these two triangle resonant cavitys are isosceles right triangle; The plated-through hole (42) that second plated-through hole array (82) and two carry out perturbation has run through the second metal copper clad layers (3), second dielectric layer (4), the 3rd metal copper clad layers (5) define a foursquare bimodulus resonant cavity (41), and two plated-through holes (42) carrying out perturbation are positioned on foursquare diagonal; 3rd plated-through hole array (83) has run through the 3rd metal copper clad layers (5), the 3rd dielectric layer (6), the 4th metal copper clad layers (7) define the identical triangle resonant cavity of size three (62) and triangle resonant cavity four (64), and these two triangle resonant cavitys are isosceles right triangle; The plated-through hole array be positioned at below the microstrip line (51) of the 3rd metal level, the coupling slot (52) of microstrip line both sides, microstrip line interrupts the window (43) formed, the input port of common formation duplexer, one end of input port is connected with square bimodulus resonant cavity (41); The plated-through hole array be positioned at below the microstrip line (11) of the first metal layer, the coupling slot (12) of microstrip line both sides, microstrip line interrupts the window (21) formed, first output port of common formation duplexer, one end of this first output port is connected with triangle resonant cavity one (22); The plated-through hole array be positioned at below the microstrip line (71) of the 4th metal level, the coupling slot (72) of microstrip line both sides, microstrip line interrupts the window (61) formed, second output port of common formation duplexer, one end of this second output port is connected with triangle resonant cavity three (62).
2. miniaturized substrate integrated waveguide duplexer according to claim 1, it is characterized in that: triangle resonant cavity one (22) is adjacent with triangle resonant cavity two (24) hypotenuse, the plated-through hole of their juncture areas interrupts, and forms the first coupling window (23); Triangle resonant cavity three (62) is adjacent with triangle resonant cavity four (64) hypotenuse, and the plated-through hole of their juncture areas interrupts, and forms the second coupling window (63).
3. miniaturized substrate integrated waveguide duplexer according to claim 1, it is characterized in that: square bimodulus resonant cavity (41) is connected with triangle resonant cavity two (24) by rectangular first coupling slot (31) in the second metal copper clad layers (3), be connected with triangle resonant cavity four (64) by rectangular second coupling slot (53) in the 3rd metal copper clad layers (5), these two rectangle coupling slots are parallel with two diagonal of square bimodulus resonant cavity (41) respectively along the direction on long limit.
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105264714B (en) | 2014-04-22 | 2017-11-24 | 华为技术有限公司 | Multipolarization substrate integration wave-guide antenna |
| CN104638360B (en) * | 2015-02-16 | 2018-03-16 | 中天宽带技术有限公司 | Filter antenna |
| CN104868210A (en) * | 2015-05-22 | 2015-08-26 | 电子科技大学 | SIW lamination structure cavity filter and design method thereof |
| CN105720331B (en) * | 2016-03-23 | 2018-09-14 | 华南理工大学 | A kind of three mould band logical duplexer of single-chamber based on microstrip-fed slot-coupled |
| CN107196069B (en) * | 2017-04-21 | 2020-02-21 | 南京邮电大学 | Compact substrate integrated waveguide back cavity slot antenna |
| CN109818119B (en) * | 2018-12-31 | 2020-09-29 | 瑞声科技（南京）有限公司 | Millimeter wave LTCC filter |
| CN111463525B (en) * | 2020-04-20 | 2021-04-27 | 南京邮电大学 | Miniaturized third-order SD-HMSIW band-pass filter based on coplanar waveguide |
| CN113471654B (en) * | 2021-05-21 | 2022-08-05 | 西安电子科技大学 | Glass-based wide-stop-band microwave duplexer |
| CN115064851A (en) * | 2022-07-19 | 2022-09-16 | 东南大学 | Rectangular cavity and round cavity multimode coupled substrate integrated waveguide duplexer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2359197A (en) * | 1999-12-11 | 2001-08-15 | Bsc Filters Ltd | Enhanced performance waveguide diplexers |
| CN203339280U (en) * | 2013-07-22 | 2013-12-11 | 电子科技大学 | Miniaturized substrate integrated waveguide duplexer |
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| WO2010049922A1 (en) * | 2008-10-27 | 2010-05-06 | Starling Advanced Communications Ltd. | A waveguide antenna front end |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2359197A (en) * | 1999-12-11 | 2001-08-15 | Bsc Filters Ltd | Enhanced performance waveguide diplexers |
| CN203339280U (en) * | 2013-07-22 | 2013-12-11 | 电子科技大学 | Miniaturized substrate integrated waveguide duplexer |
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Effective date of registration: 20170726 Address after: Dingshuzhen pottery road Yixing City, Jiangsu province 214200 No. 138 Patentee after: Jiangsu Hengxin Science & Technology Co., Ltd. Address before: 611731 Chengdu province high tech Zone (West) West source Avenue, No. 2006 Patentee before: University of Electronic Science and Technology of China |