CN203339280U - Miniaturized substrate integrated waveguide duplexer - Google Patents
Miniaturized substrate integrated waveguide duplexer Download PDFInfo
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- CN203339280U CN203339280U CN2013204368189U CN201320436818U CN203339280U CN 203339280 U CN203339280 U CN 203339280U CN 2013204368189 U CN2013204368189 U CN 2013204368189U CN 201320436818 U CN201320436818 U CN 201320436818U CN 203339280 U CN203339280 U CN 203339280U
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Abstract
The utility model discloses a miniaturized substrate integrated waveguide duplexer, which comprises a first metal copper cladding layer, a first dielectric layer, a second metal copper cladding layer, a second dielectric layer, a third metal copper cladding layer, a third dielectric layer and a fourth metal copper cladding layer which are sequentially laminated from top to bottom. A dual-mode resonant cavity and triangular resonant cavities are enclosed by metalized through-hole arrays, wherein the dual-mode resonant cavity and the triangular resonant cavities are connected through coupling slots, the triangular resonant cavities are connected with each other through coupling windows, and input and output adopt a microstrip structure. The miniaturized substrate integrated waveguide duplexer can be used in a microwave millimeter wave communication system, and has the advantages of ability of being applicable to miniaturization of the system, light weight, low cost, easiness in integration and short processing period.
Description
Technical field
The utility model belongs to microwave and millimeter wave passive device technical field, relates in particular to the substrate integration wave-guide duplexer in the microwave and millimeter wave passive device.
Background technology
Along with the fast development of Modern Communication System, the function of microwave and millimeter wave circuit becomes increasingly complex, requirement on electric performance is more and more higher, simultaneously also towards miniaturization, lightweight, future development cheaply.This development trend requires to form for the commercialization that adapts to the microwave and millimeter wave circuit.And substrate integration wave-guide produces just under these circumstances a kind ofly has low-loss, high power capacity, low cost, be easy to integrated transmission line structure, utilize this technology can produce the microwave and millimeter wave devices such as high performance filter, antenna, duplexer.
Usually realize emission and receive shared common antenna with duplexer, thereby reaching the purpose that reduces costs and reduce system bulk.In traditional design, duplexer normally consists of two filters that carry out the T-shaped knot connection of impedance matching, and one of them filter is operated in transmit frequency band, and another filter is operated in the reception frequency range.The impedance matching that rational T-shaped knot will meet between port simultaneously requires and insulation request.Yet T-shaped knot can occupy very large space usually, be unfavorable for the miniaturization of duplexer.On the other hand, mostly traditional duplexer that is operated in high band is to consist of the metallic cavity of machining, so its processing cost is high, and the cycle is long, and volume is large, and Heavy Weight is not easy of integration.Conventional diplexer has shortcomings, needs improvement badly.
Summary of the invention
The purpose of this utility model is to propose a kind of miniaturized substrate integrated waveguide duplexer, overcomes the existing shortcoming that the duplexer volume is large, processing cost is high, not easy of integration.
The technical solution of the utility model is: a kind of miniaturized substrate integrated waveguide duplexer comprises that the first metal stacked gradually from the top down covers copper layer, first medium layer, the second metal and covers copper layer, second medium layer, the 3rd metal and cover copper layer, the 3rd dielectric layer, the 4th metal and cover the copper layer; Described plated-through hole array has run through the first metal and has covered copper layer, first medium layer, the second metal and cover the copper layer and formed big or small identical triangle resonant cavity one and triangle resonant cavity two, and these two triangle resonant cavitys are isosceles right triangle; The plated-through hole that described plated-through hole array and two carry out perturbation has run through the second metal and has covered copper layer, second medium layer, the 3rd metal and cover the copper layer and formed a foursquare bimodulus resonant cavity, and two plated-through holes that carry out perturbation are positioned on foursquare diagonal; Described plated-through hole array has run through the 3rd metal and has covered copper layer, the 3rd dielectric layer, the 4th metal and cover the copper layer and formed big or small identical triangle resonant cavity three and triangle resonant cavity four, and these two triangle resonant cavitys are isosceles right triangle; The microstrip line, the coupling slot of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the 3rd metal level interrupt the window formed, and jointly form the input port of duplexer, and an end of input port is connected with square bimodulus resonant cavity; The microstrip line, the coupling slot of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the first metal layer interrupt the window formed, and jointly form output port of duplexer, and an end of this port is connected with triangle resonant cavity one; The microstrip line, the coupling slot of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the 4th metal level interrupt the window formed, and jointly form another output port of duplexer, and an end of this port is connected with triangle resonant cavity three.
Further, triangle resonant cavity one is adjacent with triangle resonant cavity two hypotenuses, and the plated-through hole of their juncture areas interrupts, and forms coupling window; Triangle resonant cavity three is adjacent with triangle resonant cavity four hypotenuses, and the plated-through hole of their juncture areas interrupts, and forms coupling window.
Further, the rectangle coupling slot that square bimodulus resonant cavity covers on the copper layer by the second metal is connected with triangle resonant cavity two, the rectangle coupling slot of covering on the copper layer by the 3rd metal is connected with triangle resonant cavity four, and these two rectangle coupling slots are parallel with two diagonal of square bimodulus resonant cavity respectively along the direction on long limit.
Advantage of the present utility model and beneficial effect:
(1) compare and traditional duplexer, the utlity model has the advantage of compact conformation.On the one hand, by using public resonant element, replace T-shaped knot, public resonant element can not only provide resonance, can also eliminate the shared area of T-shaped knot, and circuit size is reduced.On the other hand, use stepped construction that resonant element is piled up, compare with using planar structure, dimension reduction is a lot;
(2) duplexer of the present utility model is owing to adopting printed circuit board technology to carry out production and processing, and traditional duplexer adopts machining to form, and therefore duplexer cost of the present utility model is lower, weight is lighter, the process-cycle is fast, it is integrated to be easy to;
The accompanying drawing explanation
Fig. 1 is that general structure of the present utility model is launched schematic diagram
Fig. 2 is the schematic top plan view of general structure of the present utility model
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described further: as shown in Figure 1, the miniaturized substrate integrated waveguide duplexer, it is characterized in that, comprise that the first metal stacked gradually from the top down covers copper layer 1, first medium layer 2, the second metal and covers copper layer 3, second medium layer 4, the 3rd metal and cover copper layer 5, the 3rd dielectric layer 6, the 4th metal and cover copper layer 7; Described plated-through hole array 81 has run through the first metal and has covered copper layer 1, first medium layer 2, the second metal and cover copper layer 3 and formed big or small identical triangle resonant cavity 1 and triangle resonant cavity 2 24, and these two triangle resonant cavitys are isosceles right triangle; The plated-through hole 42 that described plated-through hole array 82 and two carry out perturbation has run through the second metal and has covered copper layer 3, second medium layer 4, the 3rd metal and cover copper layer 5 and formed the plated-through hole 42 that 41, two of a foursquare bimodulus resonant cavity carries out perturbation and be positioned on foursquare diagonal; Described plated-through hole array 83 has run through the 3rd metal and has covered copper layer 5, the 3rd dielectric layer 6, the 4th metal and cover copper layer 7 and formed big or small identical triangle resonant cavity 3 62 and triangle resonant cavity 4 64, and these two triangle resonant cavitys are isosceles right triangle; The microstrip line 51, the coupling slot 52 of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the 3rd metal level interrupt the window 43 formed, and jointly form the input port of duplexer, and an end of input port is connected with square bimodulus resonant cavity 41; The microstrip line 11, the coupling slot 12 of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the first metal layer interrupt the window 21 formed, and jointly form output port of duplexer, and an end of this port is connected with triangle resonant cavity 1; The microstrip line 71, the coupling slot 72 of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the 4th metal level interrupt the window 61 formed, and jointly form another output port of duplexer, and an end of this port is connected with triangle resonant cavity 3 62.
Further, triangle resonant cavity 1 is adjacent with triangle resonant cavity 2 24 hypotenuses, and the plated-through hole of their juncture areas interrupts, and forms coupling window 23; Triangle resonant cavity 3 62 is adjacent with triangle resonant cavity 4 64 hypotenuses, and the plated-through hole of their juncture areas interrupts, and forms coupling window 63.
Further, the rectangle coupling slot 31 that square bimodulus resonant cavity 41 covers on copper layer 3 by the second metal is connected with triangle resonant cavity 2 24, the rectangle coupling slot 53 of covering on copper layer 5 by the 3rd metal is connected with triangle resonant cavity 4 64, and these two rectangle coupling slots are parallel with two diagonal of square bimodulus resonant cavity 41 respectively along the direction on long limit.
The principle of the technical solution of the utility model is: square bimodulus resonant cavity 41 can be two frequency resonances, when perturbation through hole 42 moves on the diagonal of bimodulus resonant cavity 41, can change a resonance frequency of bimodulus resonant cavity 41, another resonance frequency is constant.The signal that enters bimodulus resonant cavity 41 from microstrip line 51 will produce resonance at two passband central frequencies of duplexer, one of them resonance frequency is identical with 24 resonance frequency with triangle resonant cavity 22, and another resonance frequency is identical with 64 resonance frequency with triangle resonant cavity 62.So a road signal enters triangle resonant cavity 2 24 by square bimodulus resonant cavity 41 by coupling slot 31, then enters triangle resonant cavity 1 through coupling window 23, finally by microstrip line 11 outputs.Another road signal enters triangle resonant cavity 4 64 by square bimodulus resonant cavity 41 by coupling slot 53, then enters triangle resonant cavity 3 62 through coupling window 63, finally by microstrip line 71 outputs.Can control the wherein bandwidth of a road signal passband by the size of controlling coupling slot 31, coupling window 23, and the size of control coupling slot 53, coupling window 63 can be controlled the bandwidth of another road signal passband.The size of coupling slot 52,12,72 can be controlled the input and output quality factor of filter.
For further illustrating the exploitativeness of technique scheme, below provide a specific design example, a miniaturized substrate integrated waveguide duplexer, the low channel of design is operated in 8GHz, and hf channel is operated in 9GHz, and two bandwidth chahnels are 0.33GHz.The dielectric substrate used thickness is 0.8mm, the F4B substrate that dielectric constant is 2.55.The diameter of selected plated-through hole is 0.8mm.Fig. 2 middle port A is input port, and port B and port C are two output ports, and the geometric parameter value of corresponding duplexer is as follows: a
1=27.64 mm, a
2=24.5 mm, w=2.3 mm, w
1=6.03 mm, w
2=5.73 mm, l
1=4.5 mm, l
2=4.7 mm, l
3=3.5 mm, t=5.85 mm, p
1=1.02 mm, p
2=1 mm, p
3=1.1 mm, p
4=1.11 mm, s
1=1.5 mm, s
2=1 mm, s
3=1.5 mm, s
4=4.45 mm, s
5=1 mm, s
6=4.4 mm, s
7=1.06 mm, d
1=2.33 mm, d
2=1.34 mm.Test result shows, the centre frequency of two path filters of this duplexer is respectively 8.02GHz and 9.08GHz, and corresponding bandwidth is 0.293GHz and 0.326GHz, and the insertion loss at the centre frequency place is respectively 2.86dB and 3.04dB.From 7GHz to 10GHz, its isolation is greater than 40dB.
Those of ordinary skill in the art will appreciate that, embodiment described here is in order to help reader understanding's principle of the present utility model, should be understood to that protection range of the present utility model is not limited to such special statement and embodiment.Those of ordinary skill in the art can make various do not break away from other various concrete distortion and combinations of the present utility model according to disclosed these technology enlightenments of the utility model, and these distortion and combination are still in protection range of the present utility model.
Claims (3)
1. a miniaturized substrate integrated waveguide duplexer, it is characterized in that, the first metal stacked gradually from the top down covers copper layer (1), first medium layer (2), the second metal and covers copper layer (3), second medium layer (4), the 3rd metal and cover copper layer (5), the 3rd dielectric layer (6), the 4th metal and cover copper layer (7); Described plated-through hole array (81) has run through the first metal and has covered copper layer (1), first medium layer (2), the second metal and cover copper layer (3) and formed big or small identical triangle resonant cavity one (22) and triangle resonant cavity two (24), and these two triangle resonant cavitys are isosceles right triangle; The plated-through hole (42) that described plated-through hole array (82) and two carry out perturbation has run through the second metal and has covered copper layer (3), second medium layer (4), the 3rd metal and cover copper layer (5) and formed a foursquare bimodulus resonant cavity (41), and two plated-through holes (42) that carry out perturbation are positioned on foursquare diagonal; Described plated-through hole array (83) has run through the 3rd metal and has covered copper layer (5), the 3rd dielectric layer (6), the 4th metal and cover copper layer (7) and formed big or small identical triangle resonant cavity three (62) and triangle resonant cavity four (64), and these two triangle resonant cavitys are isosceles right triangle; The microstrip line (51), the coupling slot (52) of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the 3rd metal level interrupt the window (43) formed, the common input port that forms duplexer, an end of input port is connected with square bimodulus resonant cavity (41); The microstrip line (11), the coupling slot (12) of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the first metal layer interrupt the window (21) formed, output port of common formation duplexer, an end of this port is connected with triangle resonant cavity one (22); The microstrip line (71), the coupling slot (72) of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the 4th metal level interrupt the window (61) formed, common another output port of formation duplexer, an end of this port is connected with triangle resonant cavity three (62).
2. miniaturized substrate integrated waveguide duplexer according to claim 1, is characterized in that, triangle resonant cavity one (22) is adjacent with triangle resonant cavity two (24) hypotenuses, and the plated-through hole of their juncture areas interrupts, and forms coupling window (23); Triangle resonant cavity three (62) is adjacent with triangle resonant cavity four (64) hypotenuses, and the plated-through hole of their juncture areas interrupts, and forms coupling window (63).
3. miniaturized substrate integrated waveguide duplexer according to claim 1, it is characterized in that, the rectangle coupling slot (31) that square bimodulus resonant cavity (41) covers on copper layer (3) by the second metal is connected with triangle resonant cavity two (24), the rectangle coupling slot (53) of covering on copper layer (5) by the 3rd metal is connected with triangle resonant cavity four (64), and these two rectangle coupling slots are parallel with two diagonal of square bimodulus resonant cavity (41) respectively along the direction on long limit.
、
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| CN2013204368189U CN203339280U (en) | 2013-07-22 | 2013-07-22 | Miniaturized substrate integrated waveguide duplexer |
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| CN2013204368189U CN203339280U (en) | 2013-07-22 | 2013-07-22 | Miniaturized substrate integrated waveguide duplexer |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103390784A (en) * | 2013-07-22 | 2013-11-13 | 电子科技大学 | Miniaturized substrate integration waveguide duplexer |
| CN111326835A (en) * | 2020-02-28 | 2020-06-23 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Three-dimensional stacked SIW duplexer |
| CN112271421A (en) * | 2020-09-27 | 2021-01-26 | 西安电子科技大学 | Glass-based high-isolation three-dimensional duplexer |
| CN113871902A (en) * | 2021-09-24 | 2021-12-31 | 西安电子科技大学 | MIMO multi-cavity butterfly filter antenna based on SIW structure |
| CN114243276A (en) * | 2021-10-27 | 2022-03-25 | 北京邮电大学 | Novel self-duplex multi-band terahertz antenna |
-
2013
- 2013-07-22 CN CN2013204368189U patent/CN203339280U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103390784A (en) * | 2013-07-22 | 2013-11-13 | 电子科技大学 | Miniaturized substrate integration waveguide duplexer |
| CN103390784B (en) * | 2013-07-22 | 2015-06-17 | 电子科技大学 | Miniaturized substrate integration waveguide duplexer |
| CN111326835A (en) * | 2020-02-28 | 2020-06-23 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Three-dimensional stacked SIW duplexer |
| CN112271421A (en) * | 2020-09-27 | 2021-01-26 | 西安电子科技大学 | Glass-based high-isolation three-dimensional duplexer |
| CN113871902A (en) * | 2021-09-24 | 2021-12-31 | 西安电子科技大学 | MIMO multi-cavity butterfly filter antenna based on SIW structure |
| CN113871902B (en) * | 2021-09-24 | 2022-10-25 | 西安电子科技大学 | MIMO multi-cavity butterfly filter antenna based on SIW structure |
| CN114243276A (en) * | 2021-10-27 | 2022-03-25 | 北京邮电大学 | Novel self-duplex multi-band terahertz antenna |
| CN114243276B (en) * | 2021-10-27 | 2022-10-28 | 北京邮电大学 | Novel self-duplex multi-band terahertz antenna |
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| C14 | Grant of patent or utility model | ||
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| AV01 | Patent right actively abandoned |
Granted publication date: 20131211 Effective date of abandoning: 20150617 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20131211 Effective date of abandoning: 20150617 |
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| RGAV | Abandon patent right to avoid regrant |