CN103390784A - Miniaturized substrate integration waveguide duplexer - Google Patents
Miniaturized substrate integration waveguide duplexer Download PDFInfo
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- CN103390784A CN103390784A CN2013103085242A CN201310308524A CN103390784A CN 103390784 A CN103390784 A CN 103390784A CN 2013103085242 A CN2013103085242 A CN 2013103085242A CN 201310308524 A CN201310308524 A CN 201310308524A CN 103390784 A CN103390784 A CN 103390784A
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Abstract
The invention discloses a miniaturized substrate integration waveguide duplexer which comprises a first metal copper coating layer, a first dielectric layer, a second metal copper coating layer, a second dielectric layer, a third metal copper coating layer, a third dielectric layer and a fourth metal copper coating layer which are stacked from the top down sequentially, wherein a dual-mode resonant cavity and triangular resonant cavities are defined by metallized through hole arrays; the dual-mode resonant cavity is connected with the triangular resonant cavities by coupling slots; the triangular resonant cavities are connected mutually by coupling windows; and a microstrip line structure is used for input and output. The duplexer can be used for microwave and millimeter wave communication systems, and has the advantages that the duplexer is suitable for system miniaturization, and is light in weight, low in cost, easy to integrate and fast in processing cycle.
Description
Technical field
The invention belongs to microwave and millimeter wave passive device technical field, relate in particular to the substrate integration wave-guide duplexer in the microwave and millimeter wave passive device.
Background technology
Along with the fast development of Modern Communication System, the function of microwave and millimeter wave circuit becomes increasingly complex, requirement on electric performance is more and more higher, simultaneously also towards miniaturization, lightweight, future development cheaply.This development trend requires to form for the commercialization that adapts to the microwave and millimeter wave circuit.And substrate integration wave-guide produces just under these circumstances a kind ofly has low-loss, high power capacity, low cost, be easy to integrated transmission line structure, utilizes this technology can produce the microwave and millimeter wave devices such as high performance filter, antenna, duplexer.
Usually realize emission and receive shared common antenna with duplexer, thereby reaching the purpose that reduces costs and reduce system bulk.In traditional design, duplexer normally consists of two filters that carry out the T-shaped knot connection of impedance matching, and one of them filter is operated in transmit frequency band, and another filter is operated in the reception frequency range.The impedance matching that rational T-shaped knot will meet between port simultaneously requires and insulation request.Yet T-shaped knot can occupy very large space usually, is unfavorable for the miniaturization of duplexer.On the other hand, mostly traditional duplexer that is operated in high band is to consist of the metallic cavity of machining, so its processing cost is high, and the cycle is long, and volume is large, and Heavy Weight is not easy of integration.Conventional diplexer has shortcomings, needs improvement badly.
Summary of the invention
The objective of the invention is to propose a kind of miniaturized substrate integrated waveguide duplexer, overcome the existing shortcoming that the duplexer volume is large, processing cost is high, not easy of integration.
Technical scheme of the present invention is: a kind of miniaturized substrate integrated waveguide duplexer comprises that the first metal that stacks gradually from the top down covers copper layer, first medium layer, the second metal and covers copper layer, second medium layer, the 3rd metal and cover copper layer, the 3rd dielectric layer, the 4th metal and cover the copper layer; Described plated-through hole array has run through the first metal and has covered copper layer, first medium layer, the second metal and cover the copper layer and formed big or small identical triangle resonant cavity one and triangle resonant cavity two, and these two triangle resonant cavitys are isosceles right triangle; The plated-through hole that described plated-through hole array and two carry out perturbation has run through the second metal and has covered copper layer, second medium layer, the 3rd metal and cover the copper layer and formed a foursquare bimodulus resonant cavity, and two plated-through holes that carry out perturbation are positioned on foursquare diagonal; Described plated-through hole array has run through the 3rd metal and has covered copper layer, the 3rd dielectric layer, the 4th metal and cover the copper layer and formed big or small identical triangle resonant cavity three and triangle resonant cavity four, and these two triangle resonant cavitys are isosceles right triangle; The microstrip line, the coupling slot of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the 3rd metal level interrupt the window that forms, and jointly form the input port of duplexer, and an end of input port is connected with square bimodulus resonant cavity; The microstrip line, the coupling slot of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the first metal layer interrupt the window that forms, and jointly form output port of duplexer, and an end of this port is connected with triangle resonant cavity one; The microstrip line, the coupling slot of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the 4th metal level interrupt the window that forms, and jointly form another output port of duplexer, and an end of this port is connected with triangle resonant cavity three.
Further, triangle resonant cavity one is adjacent with triangle resonant cavity two hypotenuses, and the plated-through hole of their juncture areas interrupts, and forms coupling window; Triangle resonant cavity three is adjacent with triangle resonant cavity four hypotenuses, and the plated-through hole of their juncture areas interrupts, and forms coupling window.
Further, square bimodulus resonant cavity is connected with triangle resonant cavity two by the rectangle coupling slot that the second metal covers on the copper layer, the rectangle coupling slot of covering on the copper layer by the 3rd metal is connected with triangle resonant cavity four, and these two rectangle coupling slots are parallel with two diagonal of square bimodulus resonant cavity respectively along the direction on long limit.
Advantage of the present invention and beneficial effect:
(1) compare and traditional duplexer, the present invention has advantages of compact conformation.On the one hand, by using public resonant element, replace T-shaped knot, public resonant element can not only provide resonance, can also eliminate the shared area of T-shaped knot, and circuit size is reduced.On the other hand, use stepped construction that resonant element is piled up, with using planar structure, compare, dimension reduction is a lot;
(2) duplexer of the present invention is owing to adopting printed circuit board technology to carry out production and processing, and traditional duplexer adopts machining to form, and therefore duplexer cost of the present invention is lower, weight is lighter, the process-cycle is fast, it is integrated to be easy to;
Description of drawings
Fig. 1 is that general structure of the present invention is launched schematic diagram
Fig. 2 is the schematic top plan view of general structure of the present invention
Embodiment
The present invention will be further described below in conjunction with the drawings and specific embodiments: as shown in Figure 1, the miniaturized substrate integrated waveguide duplexer, it is characterized in that, comprise that the first metal that stacks gradually from the top down covers copper layer 1, first medium layer 2, the second metal and covers copper layer 3, second medium layer 4, the 3rd metal and cover copper layer 5, the 3rd dielectric layer 6, the 4th metal and cover copper layer 7; Described plated-through hole array 81 has run through the first metal and has covered copper layer 1, first medium layer 2, the second metal and cover copper layer 3 and formed big or small identical triangle resonant cavity 1 and triangle resonant cavity 2 24, and these two triangle resonant cavitys are isosceles right triangle; The plated-through hole 42 that described plated-through hole array 82 and two carry out perturbation has run through the second metal and has covered copper layer 3, second medium layer 4, the 3rd metal and cover copper layer 5 and formed the plated-through hole 42 that 41, two of a foursquare bimodulus resonant cavity carries out perturbation and be positioned on foursquare diagonal; Described plated-through hole array 83 has run through the 3rd metal and has covered copper layer 5, the 3rd dielectric layer 6, the 4th metal and cover copper layer 7 and formed big or small identical triangle resonant cavity 3 62 and triangle resonant cavity 4 64, and these two triangle resonant cavitys are isosceles right triangle; The microstrip line 51, the coupling slot 52 of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the 3rd metal level interrupt the window 43 that forms, and jointly form the input port of duplexer, and an end of input port is connected with square bimodulus resonant cavity 41; The microstrip line 11, the coupling slot 12 of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the first metal layer interrupt the window 21 that forms, and jointly form output port of duplexer, and an end of this port is connected with triangle resonant cavity 1; The microstrip line 71, the coupling slot 72 of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the 4th metal level interrupt the window 61 that forms, and jointly form another output port of duplexer, and an end of this port is connected with triangle resonant cavity 3 62.
Further, triangle resonant cavity 1 is adjacent with triangle resonant cavity 2 24 hypotenuses, and the plated-through hole of their juncture areas interrupts, and forms coupling window 23; Triangle resonant cavity 3 62 is adjacent with triangle resonant cavity 4 64 hypotenuses, and the plated-through hole of their juncture areas interrupts, and forms coupling window 63.
Further, square bimodulus resonant cavity 41 is connected with triangle resonant cavity 2 24 by the rectangle coupling slot 31 that the second metal covers on copper layer 3, the rectangle coupling slot 53 of covering on copper layer 5 by the 3rd metal is connected with triangle resonant cavity 4 64, and these two rectangle coupling slots are parallel with two diagonal of square bimodulus resonant cavity 41 respectively along the direction on long limit.
The principle of technical scheme of the present invention is: square bimodulus resonant cavity 41 can be two frequency resonances, when perturbation through hole 42 moves on the diagonal of bimodulus resonant cavity 41, can change a resonance frequency of bimodulus resonant cavity 41, another resonance frequency is constant.The signal that enters bimodulus resonant cavity 41 from microstrip line 51 will produce resonance at two passband central frequencies of duplexer, one of them resonance frequency is identical with 24 resonance frequency with triangle resonant cavity 22, and another resonance frequency is identical with 64 resonance frequency with triangle resonant cavity 62.So a road signal enters triangle resonant cavity 2 24 by square bimodulus resonant cavity 41 by coupling slot 31, then through coupling window 23, enters triangle resonant cavity 1, finally by microstrip line 11 outputs.Another road signal enters triangle resonant cavity 4 64 by square bimodulus resonant cavity 41 by coupling slot 53, then through coupling window 63, enters triangle resonant cavity 3 62, finally by microstrip line 71 outputs.Can control the wherein bandwidth of a road signal passband by the size of controlling coupling slot 31, coupling window 23, and the size of control coupling slot 53, coupling window 63 can be controlled the bandwidth of another road signal passband.Coupling slot 52,12,72 size can be controlled the input and output quality factor of filter.
For further illustrating the exploitativeness of technique scheme, below provide a specific design example, a miniaturized substrate integrated waveguide duplexer, the low channel of design is operated in 8GHz, and hf channel is operated in 9GHz, and two bandwidth chahnels are 0.33GHz.The dielectric substrate used thickness is 0.8mm, and dielectric constant is 2.55 F4B substrate.The diameter of selected plated-through hole is 0.8mm.Fig. 2 middle port A is input port, and port B and port C are two output ports, and the geometric parameter value of corresponding duplexer is as follows: a
1=27.64 mm, a
2=24.5 mm, w=2.3 mm, w
1=6.03 mm, w
2=5.73 mm, l
1=4.5 mm, l
2=4.7 mm, l
3=3.5 mm, t=5.85 mm, p
1=1.02 mm, p
2=1 mm, p
3=1.1 mm, p
4=1.11 mm, s
1=1.5 mm, s
2=1 mm, s
3=1.5 mm, s
4=4.45 mm, s
5=1 mm, s
6=4.4 mm, s
7=1.06 mm, d
1=2.33 mm, d
2=1.34 mm.Test result shows, the centre frequency of two path filters of this duplexer is respectively 8.02GHz and 9.08GHz, and corresponding bandwidth is 0.293GHz and 0.326GHz, and the insertion loss at the centre frequency place is respectively 2.86dB and 3.04dB.From 7GHz to 10GHz, its isolation is greater than 40dB.
Those of ordinary skill in the art will appreciate that, embodiment described here is in order to help reader understanding's principle of the present invention, should be understood to that protection scope of the present invention is not limited to such special statement and embodiment.Those of ordinary skill in the art can make various do not break away from other various concrete distortion and combinations of the present invention according to these technology enlightenments disclosed by the invention, and these distortion and combination are still in protection scope of the present invention.
Claims (3)
1. miniaturized substrate integrated waveguide duplexer, it is characterized in that, the first metal that stacks gradually from the top down covers copper layer (1), first medium layer (2), the second metal and covers copper layer (3), second medium layer (4), the 3rd metal and cover copper layer (5), the 3rd dielectric layer (6), the 4th metal and cover copper layer (7); Described plated-through hole array (81) has run through the first metal and has covered copper layer (1), first medium layer (2), the second metal and cover copper layer (3) and formed big or small identical triangle resonant cavity one (22) and triangle resonant cavity two (24), and these two triangle resonant cavitys are isosceles right triangle; The plated-through hole (42) that described plated-through hole array (82) and two carry out perturbation has run through the second metal and has covered copper layer (3), second medium layer (4), the 3rd metal and cover copper layer (5) and formed a foursquare bimodulus resonant cavity (41), and two plated-through holes (42) that carry out perturbation are positioned on foursquare diagonal; Described plated-through hole array (83) has run through the 3rd metal and has covered copper layer (5), the 3rd dielectric layer (6), the 4th metal and cover copper layer (7) and formed big or small identical triangle resonant cavity three (62) and triangle resonant cavity four (64), and these two triangle resonant cavitys are isosceles right triangle; The microstrip line (51), the coupling slot (52) of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the 3rd metal level interrupt the window (43) that forms, the common input port that forms duplexer, an end of input port is connected with square bimodulus resonant cavity (41); The microstrip line (11), the coupling slot (12) of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the first metal layer interrupt the window (21) that forms, output port of common formation duplexer, an end of this port is connected with triangle resonant cavity one (22); The microstrip line (71), the coupling slot (72) of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the 4th metal level interrupt the window (61) that forms, common another output port of formation duplexer, an end of this port is connected with triangle resonant cavity three (62).
2. miniaturized substrate integrated waveguide duplexer according to claim 1, is characterized in that, triangle resonant cavity one (22) is adjacent with triangle resonant cavity two (24) hypotenuses, and the plated-through hole of their juncture areas interrupts, and forms coupling window (23); Triangle resonant cavity three (62) is adjacent with triangle resonant cavity four (64) hypotenuses, and the plated-through hole of their juncture areas interrupts, and forms coupling window (63).
3. miniaturized substrate integrated waveguide duplexer according to claim 1, it is characterized in that, square bimodulus resonant cavity (41) is connected with triangle resonant cavity two (24) by the rectangle coupling slot (31) that the second metal covers on copper layer (3), the rectangle coupling slot (53) of covering on copper layer (5) by the 3rd metal is connected with triangle resonant cavity four (64), and these two rectangle coupling slots are parallel with two diagonal of square bimodulus resonant cavity (41) respectively along the direction on long limit.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104638360A (en) * | 2015-02-16 | 2015-05-20 | 南通大学 | Filtering antenna |
| CN104868210A (en) * | 2015-05-22 | 2015-08-26 | 电子科技大学 | SIW lamination structure cavity filter and design method thereof |
| CN105720331A (en) * | 2016-03-23 | 2016-06-29 | 华南理工大学 | Single-cavity three-mode band-pass duplexer based on microstrip feed gap coupling |
| EP3125368A1 (en) * | 2014-04-22 | 2017-02-01 | Huawei Technologies Co., Ltd | Multi-polarization substrate integrated waveguide antenna |
| CN107196069A (en) * | 2017-04-21 | 2017-09-22 | 南京邮电大学 | Compact substrate integrated waveguide back cavity slot antenna |
| CN109818119A (en) * | 2018-12-31 | 2019-05-28 | 瑞声科技（南京）有限公司 | Millimeter wave LTCC filter |
| CN111463525A (en) * | 2020-04-20 | 2020-07-28 | 南京邮电大学 | Miniaturized third-order SD-HMSIW band-pass filter based on coplanar waveguide |
| CN113471654A (en) * | 2021-05-21 | 2021-10-01 | 西安电子科技大学 | Glass-based wide-stop-band microwave duplexer |
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| WO2010049922A1 (en) * | 2008-10-27 | 2010-05-06 | Starling Advanced Communications Ltd. | A waveguide antenna front end |
| CN203339280U (en) * | 2013-07-22 | 2013-12-11 | 电子科技大学 | Miniaturized substrate integrated waveguide duplexer |
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2013
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Patent Citations (3)
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| GB2359197A (en) * | 1999-12-11 | 2001-08-15 | Bsc Filters Ltd | Enhanced performance waveguide diplexers |
| WO2010049922A1 (en) * | 2008-10-27 | 2010-05-06 | Starling Advanced Communications Ltd. | A waveguide antenna front end |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3125368A1 (en) * | 2014-04-22 | 2017-02-01 | Huawei Technologies Co., Ltd | Multi-polarization substrate integrated waveguide antenna |
| US10044109B2 (en) | 2014-04-22 | 2018-08-07 | Huawei Technologies Co., Ltd. | Multi-polarization substrate integrated waveguide antenna |
| EP3125368A4 (en) * | 2014-04-22 | 2017-03-29 | Huawei Technologies Co., Ltd. | Multi-polarization substrate integrated waveguide antenna |
| CN104638360B (en) * | 2015-02-16 | 2018-03-16 | 中天宽带技术有限公司 | Filter antenna |
| CN104638360A (en) * | 2015-02-16 | 2015-05-20 | 南通大学 | Filtering antenna |
| CN104868210A (en) * | 2015-05-22 | 2015-08-26 | 电子科技大学 | SIW lamination structure cavity filter and design method thereof |
| CN105720331A (en) * | 2016-03-23 | 2016-06-29 | 华南理工大学 | Single-cavity three-mode band-pass duplexer based on microstrip feed gap coupling |
| CN105720331B (en) * | 2016-03-23 | 2018-09-14 | 华南理工大学 | A kind of three mould band logical duplexer of single-chamber based on microstrip-fed slot-coupled |
| CN107196069A (en) * | 2017-04-21 | 2017-09-22 | 南京邮电大学 | Compact substrate integrated waveguide back cavity slot antenna |
| CN109818119A (en) * | 2018-12-31 | 2019-05-28 | 瑞声科技（南京）有限公司 | Millimeter wave LTCC filter |
| CN111463525A (en) * | 2020-04-20 | 2020-07-28 | 南京邮电大学 | Miniaturized third-order SD-HMSIW band-pass filter based on coplanar waveguide |
| CN111463525B (en) * | 2020-04-20 | 2021-04-27 | 南京邮电大学 | Miniaturized third-order SD-HMSIW band-pass filter based on coplanar waveguide |
| CN113471654A (en) * | 2021-05-21 | 2021-10-01 | 西安电子科技大学 | Glass-based wide-stop-band microwave duplexer |
| CN113471654B (en) * | 2021-05-21 | 2022-08-05 | 西安电子科技大学 | Glass-based wide-stop-band microwave duplexer |
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| CN103390784B (en) | 2015-06-17 |
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Effective date of registration: 20170726 Address after: Dingshuzhen pottery road Yixing City, Jiangsu province 214200 No. 138 Patentee after: Jiangsu Hengxin Science & Technology Co., Ltd. Address before: 611731 Chengdu province high tech Zone (West) West source Avenue, No. 2006 Patentee before: University of Electronic Science and Technology of China |