CN113471654B - Glass-based wide-stop-band microwave duplexer - Google Patents

Abstract

The invention relates to a glass-based wide-stop-band microwave duplexer, which comprises: the metal layer comprises a first metal layer (1), a first dielectric layer (2), a second metal layer (3), a bonding layer (7), a third metal layer (4), a second dielectric layer (5) and a fourth metal layer (6) which are sequentially stacked. A plurality of radiation windows are arranged between the second-order resonant cavity and the third resonant cavity and between the fourth resonant cavity and the fifth-order resonant cavity R4-R5 of the duplexer, a hybrid coupling mode is introduced, namely, the hybrid coupling mode simultaneously comprises electric coupling and magnetic coupling, so that electric field coupling and magnetic field coupling are synchronously enhanced, a transmission zero point is introduced near a low-pass band, the frequency selection characteristic of the low-pass band is improved, the bandwidth of the pass band is improved, and the return loss is reduced.

Description

A glass-based wide stopband microwave duplexer

technical field

The invention belongs to the technical field of integrated circuit manufacturing and packaging, and in particular relates to a glass-based wide stopband microwave duplexer.

Background technique

The slowdown in the development trend of Moore's Law and the diversified development of integrated circuit applications are two important characteristics of the current integrated circuit industry. , especially in the 5G field, such as 5G millimeter wave (28-60GHz), 5GSub-6GHz, 5G Internet of Things (Sub-1GHz), the application requirements of high speed, high frequency and heterogeneous integration of various devices require advanced packaging technology. Innovative development.

As an advanced system integration technology, the 2.5D integration technology of interposer based on through-silicon vias can realize multi-chip high-density three-dimensional integration, but the high cost and poor electrical performance of silicon-based interposers make it acceptable for market application. limit.

As a material that may replace silicon-based interposer, through-glass via (TGV) three-dimensional interconnect technology is becoming a current research hotspot due to its many advantages. Compared with silicon substrates, the advantages of TGV are mainly reflected in: 1) Excellent High frequency electrical properties. Glass material is an insulator material, the dielectric constant is only about 1/3 of that of silicon material, and the loss factor is 2-3 orders of magnitude lower than that of silicon material, which greatly reduces the substrate loss and parasitic effect and ensures the integrity of the transmitted signal. ; 2) Large-scale ultra-thin glass substrates are easy to obtain. Glass manufacturers such as Corning, Asahi and SCHOTT can provide ultra-large (>2m×2m) and ultra-thin (<50μm) panel glass and ultra-thin flexible glass materials. 3) Low cost. Benefiting from the easy availability of large-sized ultra-thin panel glass and the need to deposit no insulating layer, the production cost of the glass interposer is only about 1/8 of that of the silicon-based interposer; 4) the process flow is simple. There is no need to deposit an insulating layer on the surface of the substrate and the inner wall of the TGV, and no thinning is required in the ultra-thin adapter plate; 5) The mechanical stability is strong. Even when the thickness of the adapter plate is less than 100μm, the warpage is still small;

6) Wide range of application fields. In addition to good application prospects in the high-frequency field, as a transparent material, it can also be used in the field of optoelectronic system integration. The advantages of air tightness and corrosion resistance make glass substrates have great potential in the field of MEMS packaging; in addition, TGV technology It can also be used in medical, optoelectronic devices, radio frequency modules, electronic gas amplifiers, equipment fixtures and other fields.

Substrate Integrated Waveguide (SIW) technology can continue to promote microwave circuits by replacing rectangular waveguide and planar transmission line structures because it can transmit signals on a flat-level dielectric substrate like a metal waveguide and ensure the transmission of signals with low radiation loss. system development. With the continuous development of technology, SIW can be integrated with most communication system components on a substrate without excessive manufacturing of specific devices through additional processes, thereby reducing the loss during signal transmission and curbing parasitic phenomena.

However, the frequency selection effect and passband bandwidth of the current SIW microwave duplexer are both low, resulting in poor overall performance of the filter.

SUMMARY OF THE INVENTION

In order to solve the above problems existing in the prior art, the present invention provides a glass-based wide stopband microwave duplexer. The technical problem to be solved by the present invention is realized by the following technical solutions:

An embodiment of the present invention provides a glass-based wide stop-band microwave duplexer, comprising: a first metal layer, a first dielectric layer, a second metal layer, a bonding layer, a third metal layer, and a second dielectric layer stacked in sequence layer and a fourth metal layer, where,

The first metal layer is provided with an input port, a first output port and a second output port;

There are a plurality of first conductor posts running through the first dielectric layer, and the plurality of first conductor posts and the first metal layer and the second metal layer form a first-order resonant cavity and a second-order resonant cavity , the fifth-order resonant cavity, the sixth-order resonant cavity, the seventh-order resonant cavity, and the eighth-order resonant cavity, the second-order resonant cavity and the fifth-order resonant cavity are arranged in parallel, and the first-order resonant cavity , the seventh-order resonant cavity and the eighth-order resonant cavity are arranged side by side and are located on one side of the second-order resonant cavity and the fifth-order resonant cavity, and the sixth-order resonant cavity is located in the sixth-order resonant cavity On the other side of the second-order resonant cavity and the fifth-order resonant cavity, a first coupling window is provided between the first-order resonant cavity and the second-order resonant cavity, and the fifth-order resonant cavity and the second-order resonant cavity are provided with a first coupling window. A third coupling window is arranged between the sixth-order resonant cavity, a fourth coupling window and a fifth coupling window in parallel are arranged between the first-order resonant cavity and the seventh-order resonant cavity, and the seventh A sixth coupling window and a seventh coupling window are arranged between the order resonant cavity and the eighth order resonator, the input port is located at the top of the first order resonator cavity, and the first output port is located at the top of the first order resonant cavity. the top of the sixth-order resonant cavity, and the second output port is located on the top of the eighth-order resonant cavity;

The second metal layer is provided with a first radiation window, a second radiation window, a third radiation window, a fourth radiation window, a fifth radiation window and a sixth radiation window, the first radiation window, the third radiation window The radiation window and the fourth radiation window are arranged at the bottom of the second-order resonant cavity, and the second radiation window, the fifth radiation window and the sixth radiation window are arranged at the fifth-order resonant cavity bottom of;

The third metal layer is provided with a seventh radiation window, an eighth radiation window, a ninth radiation window, a tenth radiation window, an eleventh radiation window and a twelfth radiation window, the seventh radiation window, the The eighth radiation window, the ninth radiation window, the tenth radiation window, the eleventh radiation window and the twelfth radiation window and the first radiation window, the second radiation window, the The third radiation window, the fourth radiation window, the fifth radiation window and the sixth radiation window are in one-to-one correspondence;

There are a plurality of second conductor posts running through the second dielectric layer, and the plurality of second conductor posts and the third metal layer and the fourth metal layer form a third-order resonant cavity and a fourth-order resonant cavity , the third-order resonant cavity corresponds to the second-order resonant cavity, the fourth-order resonant cavity corresponds to the fifth-order resonant cavity, the third-order resonant cavity and the fourth-order resonant cavity correspond to A second coupling window is arranged between the resonators;

The fourth metal layer is grounded.

In an embodiment of the present invention, a first groove, a second groove and a third groove are formed on the sidewall of the first metal layer, wherein,

The input port is located in the first groove, the first output port is located in the second groove, and the second output port is located in the third groove.

In an embodiment of the present invention, the resonance modes of the first-order resonant cavity are TE ₁₀₃ and TE ₃₀₁ ;

Resonant modes of the second-order resonant cavity, the third-order resonant cavity, the fourth-order resonant cavity, the fifth-order resonant cavity, the seventh-order resonant cavity, and the eighth-order resonant cavity is TE ₁₀₁ ;

The resonance mode of the sixth-order resonant cavity is TE ₁₀₃ .

In one embodiment of the present invention, the resonance frequency of the TE ₁₀₃ resonance mode in the first-order resonant cavity is the same as the resonance frequency of the TE ₁₀₁ resonance mode in the second-order resonance cavity.

In an embodiment of the present invention, the first-order resonant cavity, the second-order resonant cavity, the third-order resonant cavity, the fourth-order resonant cavity, the fifth-order resonant cavity, the The seventh-order resonant cavity and the eighth-order resonant cavity are both rectangular resonant cavities;

The sixth-order resonant cavity is formed by a first part, a second part and a third part that communicate with each other, and the shapes of the first part, the second part and the third part are all rectangular.

In an embodiment of the present invention, the lengths of the third part, the first part, and the second part increase in sequence, and the widths of the first part, the second part, and the third part increase in sequence. increase.

In an embodiment of the present invention, the length of the first-order resonant cavity is 5540 μm, the width is 5272 μm, the width of the input side of the first-order resonant cavity is 2038 μm, and the width of the input side of the sixth-order resonant cavity is 2300 μm ;

The length of the second-order resonant cavity is 2400 μm and the width is 2378 μm;

The length of the fifth-order resonant cavity is 2400 μm and the width is 2391 μm;

The first part has a length of 1620 μm and a width of 5330 μm; the second part has a length of 2450 μm and a width of 5339 μm; the third part has a length of 1470 μm and a width of 5352 μm;

The length of the seventh-order resonant cavity and the eighth-order resonant cavity are both 1820 μm, the width w ₁₃ is 5900 μm, and the width w ₁₅ of the output side of the eighth-order resonant cavity is 2620 μm;

The length of the third-order resonant cavity and the fourth-order resonant cavity are both 2400 μm and 2415 μm in width.

In an embodiment of the present invention, the first radiation window is arranged between the third radiation window and the fourth radiation window, and the second radiation window is arranged between the fifth radiation window and the between the sixth radiation window.

In an embodiment of the present invention, the shape of the first radiation window is a circle, and its diameter is 504 μm;

The shape of the second radiation window is circular, and its diameter is 484 μm;

The third radiation window, the fourth radiation window, the fifth radiation window and the sixth radiation window are all rectangular in shape, and their lengths are all 100 μm and their widths are all 300 μm;

The distance between the third radiation window and the fourth radiation window and the distance between the fifth radiation window and the sixth radiation window are both 2000 μm.

In one embodiment of the present invention, an adhesive layer is further included, and the adhesive layer is disposed around the bonding layer and the third metal layer and located on the second metal layer and the second medium between layers.

Compared with the prior art, the beneficial effects of the present invention:

In the duplexer of the present invention, multiple radiation windows are set between R2-R3 between the second-order resonant cavity and the third-order resonant cavity, and between the fourth-order resonant cavity and the fifth-order resonant cavity R4-R5, and a hybrid coupling mode is introduced. , that is, including both electrical coupling and magnetic coupling, thereby simultaneously enhancing the electric field coupling and magnetic field coupling, introducing a transmission zero near the low passband, improving the frequency selection characteristics of the low passband, increasing the bandwidth of the passband, and reducing the return wave loss.

Description of drawings

1 is a structural front view of a glass-based wide stopband microwave duplexer according to an embodiment of the present invention;

2 is a top view of a first metal layer and a first dielectric layer according to an embodiment of the present invention;

3 is a top view of a first dielectric layer and a second metal layer according to an embodiment of the present invention;

4 is a top view of a third metal layer and a second dielectric layer according to an embodiment of the present invention;

5 is a top view of a second dielectric layer and a fourth metal layer according to an embodiment of the present invention;

6 is a top view of a bonding layer according to an embodiment of the present invention;

FIG. 7 is a schematic diagram of a coupling mechanism of a glass-based wide stopband microwave duplexer according to an embodiment of the present invention;

8a-8b are frequency response diagrams of a glass-based wide stopband microwave duplexer according to an embodiment of the present invention;

Description of reference numerals: 1-first metal layer; 2-first dielectric layer; 3-second metal layer; 4-third metal layer; 5-second dielectric layer; 6-fourth metal layer; 7-key 8-first conductor post; 9-second conductor post; 10-adhesive layer; 11-input port; 12-first groove; 13-first output port; 14-second groove; 15 - second output port; 16 - third groove; 17 - first radiation window; 18 - second radiation window; 19 - third radiation window; 20 - fourth radiation window; 21 - fifth radiation window; 22 - 6th radiation window; 23-first coupling window; 24-second coupling window; 25-third coupling window; 26-fourth coupling window; 27-fifth coupling window; 28-sixth coupling window; 29-th Seven coupling windows; 30 - seventh radiation window; 31 - eighth radiation window; 32 - ninth radiation window; 33 - tenth radiation window; 34 - eleventh radiation window; 35 - twelfth radiation window; R1 - First-order resonator; R2-second-order resonator; R3-third-order resonator; R4-fourth-order resonator; R5-fifth-order resonator; R6-sixth-order resonator; R7-seventh-order resonator order resonant cavity; R8-eighth order resonant cavity.

Detailed ways

The present invention will be described in further detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.

Example 1

Please refer to FIG. 1. FIG. 1 is a front view of the structure of a glass-based wide stopband microwave duplexer according to an embodiment of the present invention. The glass-based wide stopband microwave duplexer includes a first metal layer 1, a first dielectric layer 2, a second metal layer 3, a bonding layer 7, a third metal layer 4, a second dielectric layer 5 and a Four metal layers 6 .

In this embodiment, the first dielectric layer 2 is used as the upper substrate of the duplexer, the second metal layer 3 is used as the common ground layer of the first dielectric layer 2 and the second dielectric layer 5, and the second dielectric layer 5 is used as the duplexer The underlying substrate, the fourth metal layer 6 is grounded, and is used to transfer the charges on the first metal layer 1 to the ground in time.

Specifically, the materials of the first metal layer 1 , the second metal layer 3 , the third metal layer 4 , the fourth metal layer 6 , the first conductor post and the second conductor post may all be copper.

Please refer to FIG. 2 , which is a top view of a first metal layer and a first dielectric layer according to an embodiment of the present invention. The first metal layer 1 is provided with an input port 11 , a first output port 13 and a second output port 15 for inputting and outputting electromagnetic waves. The first output port 13 and the second output port 15 output electromagnetic waves with different resonance modes. Specifically, the input port 11 , the first output port 13 and the second output port 15 may all be metal sheets, and their shapes may all be rectangular, and the widths w ₃ of the three port metal sheets are all 500 μm.

The first dielectric layer 2 can be a quartz dielectric layer, that is, a glass substrate, and its thickness h _TGV is 230 μm; the first dielectric layer 2 can be etched to form a plurality of upper dielectric through holes on the first dielectric layer 2, and the upper dielectric The through holes are filled with metal to obtain the first conductor pillars 8 , so that a plurality of first conductor pillars 8 are formed through the first dielectric layer 2 . Wherein, the diameter d _TGV of each upper-layer dielectric through hole may be 50 μm, and the center-to-center distance p _TGV between each upper-layer dielectric through hole may be 100 μm.

A plurality of first conductor posts 8 and the first dielectric layer 2 form a ground gate structure, one end of which is connected to the first metal layer 1 and the other end is connected to the second metal layer 3 , and the plurality of first conductor posts 8 are connected to the first metal layer 1 , The second metal layer 3 forms a first-order resonant cavity R1, a second-order resonant cavity R2, a fifth-order resonant cavity R5, a sixth-order resonant cavity R6, a seventh-order resonant cavity R7, and an eighth-order resonant cavity R8. The order resonator R2 and the fifth order resonator R5 are arranged side by side, the first order resonator R1, the seventh order resonator R7 and the eighth order resonator R8 are arranged side by side and are located in the second order resonator R2 and the fifth order resonator On one side of R5, the sixth-order resonator R6 is located on the other side of the second-order resonator R2 and the fifth-order resonator R5. It can be understood that the first-order resonant cavity R1, the seventh-order resonant cavity R7 and the eighth-order resonant cavity R8 are arranged in parallel and adjacent, the second-order resonant cavity R2 and the fifth-order resonant cavity R5 are arranged in parallel and adjacent, And the second-order resonator R2 and the fifth-order resonator R5 are arranged between the parallel R1, R7, R8 and R6.

Further, the input port 11 is located at the top of the first-order resonant cavity R1, and is used to input electromagnetic waves to the first-order resonant cavity R1; the first output port 13 is located at the top of the sixth-order resonant cavity R6, and is used to output the sixth-order resonance. The electromagnetic wave in the cavity R6; the second output port 15 is located at the top of the eighth-order resonant cavity R8, and is used for outputting the electromagnetic wave in the eighth-order resonant cavity R8.

Further, a first coupling window 23 is provided between the first-order resonant cavity R1 and the second-order resonant cavity R2, and a third coupling window 25 is provided between the fifth-order resonant cavity R5 and the sixth-order resonant cavity R6. A fourth coupling window 26 and a fifth coupling window 27 are arranged between the first order resonator R1 and the seventh order resonator R7, and a parallel fourth coupling window 26 is arranged between the seventh order resonator R7 and the eighth order resonator R8. Six coupling windows 28 and seventh coupling windows 29 . Specifically, the upper dielectric through hole 8 is not provided in the middle part where the first-order resonator R1 and the second-order resonator R2 are connected, thereby forming a first coupling window 23 for realizing the first-order resonator R1 and the second-order resonator R1 and the second-order resonator R2. Magnetic coupling between the order resonators R2; the upper dielectric through hole 8 is not provided in the middle part where the fifth order resonator R5 and the sixth order resonator R6 are connected, thereby forming a third coupling window 25 for realizing the fifth order resonator Magnetic coupling between the first-order resonator R5 and the sixth-order resonator R6; the upper dielectric through hole 8 is not provided in the middle part where the first-order resonator R1 and the seventh-order resonator R7 are connected, thereby forming a fourth coupling window 26 and the fifth coupling window 27, used to realize the magnetic coupling between the first-order resonant cavity R1 and the seventh-order resonant cavity R7; not provided in the middle part where the seventh-order resonant cavity R7 and the eighth-order resonant cavity R8 are connected The upper dielectric through hole 8 forms a sixth coupling window 28 and a seventh coupling window 29 for realizing the magnetic coupling between the seventh-order resonator R7 and the eighth-order resonator R8.

In a specific embodiment, the window width l ₂ of the first coupling window 23 is 710 μm, the window width l ₃ of the third coupling window 25 is 675 μm, the window width w ₁₆ of the fourth coupling window 26 is 696 μm, and the fifth coupling window is 696 μm. The window width w ₁₇ of 27 is 696 μm, the window width w ₁₈ of the sixth coupling window 28 is 573 μm, and the window width w ₁₉ of the seventh coupling window 29 is 573 μm.

Please refer to FIG. 3 , which is a top view of a first dielectric layer and a second metal layer according to an embodiment of the present invention. The second metal layer 3 is provided with a first radiation window 17, a second radiation window 18, a third radiation window 19, a fourth radiation window 20, a fifth radiation window 21 and a sixth radiation window 22. The first radiation window 17, The third radiation window 19 and the fourth radiation window 20 are arranged at the bottom of the second order resonator R2, and the second radiation window 18, the fifth radiation window 21 and the sixth radiation window 22 are arranged at the bottom of the fifth order resonator R5. Specifically, the first to sixth radiation windows 17-22 can be obtained by etching.

Please refer to FIG. 4 , which is a top view of a third metal layer and a second dielectric layer according to an embodiment of the present invention. The third metal layer 4 is provided with a seventh radiation window 30, an eighth radiation window 31, a ninth radiation window 32, a tenth radiation window 33, an eleventh radiation window 34 and a twelfth radiation window 35, and the seventh radiation window 30, the eighth radiation window 31, the ninth radiation window 32, the tenth radiation window 33, the eleventh radiation window 34, the twelfth radiation window 35 and the first radiation window 17, the second radiation window 18, the third radiation window 19. The fourth radiation window 20, the fifth radiation window 21 and the sixth radiation window 22 are in one-to-one correspondence. That is, the seventh radiation window 30 corresponds to and communicates with the first radiation window 17 , the ninth radiation window 32 corresponds to and communicates with the third radiation window 19 , the tenth radiation window 33 corresponds to and communicates with the fourth radiation window 20 , and the seventh radiation window 32 corresponds to and communicates with the fourth radiation window 20 . The window 30, the ninth radiation window 32, and the tenth radiation window 33 are arranged at the bottom of the second-order resonant cavity R2; the eighth radiation window 31 corresponds to and communicates with the second radiation window 18, and the eleventh radiation window 34 is connected to the fifth radiation window The window 21 corresponds to and communicates with, the twelfth radiation window 35 corresponds to and communicates with the sixth radiation window 22, and the eighth radiation window 31, the eleventh radiation window 34 and the twelfth radiation window 35 are arranged in the fifth-order resonator cavity R5. bottom. Specifically, the seventh to twelfth radiation windows 30-35 can be obtained by etching.

The second dielectric layer 5 can be a quartz dielectric layer, that is, a glass substrate, and its thickness h _TGV is 230 μm; the first dielectric layer 2 can be etched to form a plurality of lower dielectric through holes on the first dielectric layer 2, and the lower dielectric The through holes are filled with metal to obtain the second conductor pillars 9, so that a plurality of second conductor pillars 9 run through the second dielectric layer 5, wherein the diameter d _TGV of each lower dielectric through hole can be 50 μm, and each lower dielectric through hole has a diameter d TGV of 50 μm. The center-to-center spacing _pTGV between the holes 9 was 100 μm.

In this embodiment, the first dielectric layer and the second dielectric layer are made of glass substrates. The relative permittivity of glass is much smaller than that of silicon substrates. The use of glass substrates instead of silicon substrates to make three-dimensional passive devices can eliminate the need for high-frequency circuits. The eddy current effect significantly reduces the high-frequency loss of passive components, improves its quality factor, significantly reduces the power consumption of the duplexer, and improves the quality factor of the filter.

A plurality of lower dielectric through holes 9 are distributed on the second dielectric layer 5 in a rectangular shape, one end of the plurality of second conductor posts 9 is connected to the third metal layer 4, the other end is connected to the fourth metal layer 6, and a plurality of second conductors The pillar 9 and the third metal layer 4 and the fourth metal layer 6 form a third-order resonant cavity R3 and a fourth-order resonant cavity R4, the third-order resonant cavity R3 corresponds to the second-order resonant cavity R2, and the fourth-order resonant cavity R4 corresponds to the fifth order resonator R5. A second coupling window 24 is provided between the third-order resonant cavity R3 and the fourth-order resonant cavity R4, that is, the lower dielectric through hole is not provided in the middle part where the third-order resonant cavity R3 and the fourth-order resonant cavity R4 are connected. A second coupling window 24 is formed for realizing the magnetic coupling between the third-order resonator R3 and the fourth-order resonator R4. In a specific embodiment, the window width w ₁₁ of the second coupling window 24 is 536 μm.

Specifically, the third-order resonator R3 is arranged below the second-order resonator R2, the seventh radiation window 30, the first radiation window 17, the ninth radiation window 32, the third radiation window 19, the tenth radiation window 33, The fourth radiation window 20 communicates the third-order resonator R3 and the second-order resonator R2; the fourth-order resonator R4 is arranged below the fifth-order resonator R5, and the eighth radiation window 31, the second radiation window 18, The eleventh radiation window 34 , the fifth radiation window 21 , the twelfth radiation window 35 , and the sixth radiation window 22 communicate the fourth-order resonant cavity R4 with the fifth-order resonant cavity R5 . Specifically, the third-order resonator R3 and the second-order resonator R2 are electrically coupled through the first radiation window 17 and the seventh radiation window 30 , and the third radiation window 19 , the ninth radiation window 32 , and the fourth radiation window The window 20 and the tenth radiation window 33 realize magnetic coupling; the fourth-order resonator R4 and the fifth-order resonator R5 realize electrical coupling through the second radiation window 18 and the eighth radiation window 31, and the fifth radiation window 19, The eleven radiation windows 34 , the sixth radiation window 22 , and the twelfth radiation window 35 realize magnetic coupling.

Please refer to FIG. 5 , which is a top view of a second dielectric layer and a fourth metal layer according to an embodiment of the present invention. The fourth metal layer 6 and the first metal layer 1, the first dielectric layer 2, the second metal layer 3, the bonding layer 7, the third metal layer 4, the second dielectric layer 5, the first conductor post 8 and the second conductor The pillars 9 form closed filter resonators, ie the first to sixth order resonators R1-R6.

The duplexer of this embodiment is provided with multiple radiation windows between R2-R3 between the second-order resonator and the third-order resonator, and between the fourth-order resonator and the fifth-order resonator R4-R5, which introduces hybrid coupling The method includes both electrical coupling and magnetic coupling, thereby simultaneously enhancing the electric field coupling and magnetic field coupling, introducing a transmission zero near the low passband, improving the frequency selection characteristics of the low passband, and at the same time increasing the bandwidth of the passband. return loss.

Please refer to FIG. 6 , which is a top view of a bonding layer according to an embodiment of the present invention. The bonding layer 7 bonds the second metal layer 3 and the third metal layer 4 together, and its shape is a J-shaped, and its size is the same as that of the shape formed by the second conductor column 9 in the second dielectric layer 5, so that the The corresponding radiation windows are connected.

Further, an adhesive layer 10 is also provided around the bonding layer 7 and around the third metal layer 4, and the adhesive layer 10 is located between the second metal layer 3 and the second dielectric layer 5 for bonding the bonding layer 10. The second metal layer 3 outside the layer 7 and the second dielectric layer 5 outside the third metal layer 4 are bonded together.

In a specific embodiment, a first groove 12 , a second groove 14 and a third groove 16 are formed on the sidewall of the first metal layer 1 , wherein the input port 11 is arranged in the first groove 12 , The first output port 13 is provided in the second groove 14 , and the second output port 15 is located in the third groove 16 . It can be understood that the first groove 12 is located at the top of the first-order resonant cavity R1 to accommodate the input port 11, the second groove 14 is located at the top of the sixth-order resonant cavity R6 to accommodate the first output port 13, and the third groove The slot 16 is located at the top of the eighth-order resonant cavity R8 to accommodate the second output port 15 .

Specifically, the first groove 12 is provided on one sidewall of the first metal layer 1 , the second groove 14 and the third groove 16 are provided on the other sidewall of the first metal layer 1 , the first groove The side wall where 12 is located and the side walls where the second groove 14 and the third groove 16 are located are opposite side walls.

In a specific embodiment, the first-order resonant cavity R1, the second-order resonant cavity R2, the third-order resonant cavity R3, the fourth-order resonant cavity R4, and the fifth-order resonant cavity R5 are all rectangular resonant cavities. The aspect ratio of the first-order resonator R1 is 1.051.

The sixth-order resonant cavity R6 is formed by a first part R61, a second part R62 and a third part R63 that communicate with each other, and the shapes of the first part R61, the second part R62 and the third part R63 are all rectangular; further, the third part The lengths of R63 , the first portion R61 , and the second portion R62 increase in sequence, and the widths of the first portion R61 , the second portion R62 , and the third portion R63 increase in sequence.

Specifically, the length l of the first-order resonant cavity R1 is 5540 μm, and the width w is 5272 μm, that is, the aspect ratio k=1.051. At this time, the length l ₁ of the first groove 12 and the second groove 14 is 2870 μm, and the width w ₂ is 560 μm, the input side width w of the _first -order resonator R1 is 2038 μm, the sixth-order resonator R6 input side width w ₁₂ is 2300 μm; the length l ₄ of the second-order resonator R2 is 2400 μm, and the width w ₄ is 2378 μm; the length l ₅ of the fifth-order resonant cavity R5 is 2400 μm, and the width w ₅ is 2391 μm; in the sixth-order resonant cavity R6, the length l ₇ of the first part R61 is 1620 μm, the width w ₇ is 5330 μm, and the second part R62 has a length l 7 of 1620 μm. The length l ₈ is 2450 μm, the width w ₈ is 5339 μm, the length l ₉ of the third part R63 is 1470 μm, and the width w ₉ is 5352 μm; the third-order resonator R3 and the fourth-order resonator R4 have the same size, and their length l ₁₀ Both are 2400 μm, the width w ₁₀ is both 2415 μm; the length l ₁₃ of the seventh-order resonator R7 and the eighth-order resonator R8 are both 1820 μm, the width w ₁₃ is both 5900 μm, and the width w of the output side of the eighth-order resonator R8 ₁₅ is 2620 μm, the length l ₁₂ of the third groove 16 is 270 μm, and the width w ₁₄ is 600 μm.

In a specific embodiment, the first radiation window 17, the second radiation window 18, the third radiation window 19, the fourth radiation window 20, the fifth radiation window 21 and the sixth radiation window 22 are arranged side by side, and the first radiation window 17 Arranged between the third radiation window 19 and the fourth radiation window 20 , the second radiation window 18 is arranged between the fifth radiation window 21 and the sixth radiation window 22 .

Specifically, the first radiation window 17 and the second radiation window 18 are circular in shape, the diameter d _C1 of the first radiation window is 504 μm, the diameter d _C2 of the second radiation window is 484 μm, the third radiation window 19 and the fourth radiation window are The window 20, the fifth radiation window 21, and the sixth radiation window 22 are rectangular in shape, the length l ₆ of the third to sixth radiation windows is 100 μm, and the width w ₆ is 300 μm; The distance between them and the distance between the fifth radiation window 21 and the sixth radiation window 22 are both l and ₁₁ is 2000 μm.

The shapes and sizes of the seventh radiation window 24, the eighth radiation window 25, the ninth radiation window 26, the tenth radiation window 27, the eleventh radiation window 28 and the twelfth radiation window 29 are the same as those of the first radiation window 17, the second The radiation window 18 , the third radiation window 19 , the fourth radiation window 20 , the fifth radiation window 21 and the sixth radiation window 20 have the same shape and size, and will not be repeated here.

In a specific embodiment, the resonant modes of the first-order resonator R1 are TE ₁₀₃ and TE ₃₀₁ , wherein the center frequency f _TE301 of TE ₁₀₃ and f _TE103 of the TE ₃₀₁ mode have a small difference, and f _TE301 is the low channel center frequency , f _TE103 is the high channel center frequency. The resonance modes of the second-order resonator R2, the third-order resonator R3, the fourth-order resonator R4, the fifth-order resonator R5, the seventh-order resonator R7 and the eighth-order resonator R8 are TE ₁₀₁ , the sixth-order resonator The resonance mode of the order resonator R6 is TE ₁₀₃ .

Further, the resonant frequency of the TE ₁₀₃ resonant mode in the first-order resonator R1 is the same as the resonant frequency of the TE ₁₀₁ resonant mode in the second-order resonator R2, and the resonant frequencies of the other higher-order modes are different. Secondary modes cannot be transmitted in the resonant cavity of the first channel R1-R2-R3-R4-R5-R6.

In this embodiment, since the high-order mode in R1 cannot be transmitted in the resonant cavity of the first channel, at the same time, the resonant cavity R1 and R6 adopt the deep slot feeding method, and the lateral coupling between R1-R2 and R5-R6 is adopted. In this way, at least one of the even-numbered modes of TE _m0nm and n is suppressed. Therefore, the out-of-band rejection of the patented duplexer reaches 1.89f _TE103 , and good out-of-band rejection and isolation are also achieved between the two channels.

Please refer to FIG. 7. FIG. 7 is a schematic diagram of a coupling mechanism of a glass-based wide stopband microwave duplexer according to an embodiment of the present invention.

Specifically, the first-order resonator R1 and the second-order resonator R2 are magnetically coupled through the first coupling window 23; the second-order resonator R2 and the third-order resonator R3 pass through the first radiation window 17 and the seventh radiation window 30 realizes electrical coupling, and realizes magnetic coupling through the third radiation window 19, the ninth radiation window 32, the fourth radiation window 20, and the tenth radiation window 33; the third-order resonant cavity R3 and the fourth-order resonant cavity R4 are coupled through the second The window 24 realizes magnetic coupling; the fourth-order resonator R4 and the fifth-order resonator R5 realize electrical coupling through the second radiation window 18 and the eighth radiation window 31, and realize electrical coupling through the fifth radiation window 19, eleven radiation windows 34, and sixth The radiation window 22 and the twelfth radiation window 35 realize magnetic coupling; the fifth-order resonator R5 and the sixth-order resonator R6 realize magnetic coupling through the third coupling window 25; the first-order resonator R1 and the seventh-order resonator R7 Magnetic coupling is achieved through the fourth coupling window 26 and the fifth coupling window 27 ;

The working process of the duplexer in this embodiment is as follows: first, the electromagnetic wave is input from the input port to the first-order resonator R1 to simultaneously excite the electromagnetic waves of the TE ₃₀₁ mode and the TE ₁₀₃ mode; then, the magnetic coupling transmission is performed through the first coupling window 23 To the second-order resonator R2, due to the magnetic coupling between the first-order resonator R1 and the second-order resonator R2, the magnetic coupling can suppress the propagation of the TE ₃₀₁ mode electromagnetic wave while propagating the TE ₁₀₃ mode electromagnetic wave , so that the energy of the TE ₃₀₁ mode cannot propagate to the second-order resonator R2; when the electromagnetic wave is coupled to the second-order resonator R2, due to the size limitation of the resonator R2, the resonant frequency of the TE ₁₀₁ mode is 45.84 GHz, so TE The ₁₀₁ mode is excited in the resonant cavity R2, and the electromagnetic wave is coupled to the first radiation window 17, the seventh radiation window 30, the third radiation window 19, the ninth radiation window 32, the fourth radiation window 20, and the tenth radiation window 33. The third-order resonator R3 is coupled by electromagnetic coupling; then, the electromagnetic wave continues to be transmitted to the fourth-order resonator R4 by magnetic coupling through the second coupling window 24; after that, the electromagnetic wave passes through the second radiation window 18, the eighth The radiation window 31 , the fifth radiation window 19 , the eleven radiation window 34 , the sixth radiation window 22 , and the twelfth radiation window 35 are transmitted to the fifth-order resonant cavity R5 by electromagnetic coupling, and finally, the electromagnetic wave passes through the third coupling window 25 is magnetically coupled and transmitted to the sixth-order resonator R6, and then output from the first output port 13; the electromagnetic wave in the TE ₃₀₁ mode is magnetically coupled to the seventh-order resonance through the fourth coupling window 26 and the fifth coupling window 27. In the cavity R7, the resonant frequency of the TE ₃₀₁ mode becomes 43.69 GHz at this time, the TE ₁₀₁ mode is excited in the resonant cavity R7, and the electromagnetic wave of the TE ₁₀₃ mode is suppressed. Finally, the electromagnetic wave passes through the sixth coupling window 28 and the seventh coupling window. 29 is magnetically coupled and transmitted to the eighth-order resonant cavity R8, and then output from the second output port 15.

When the duplexer according to the embodiment of the present invention works, electromagnetic waves of the TE ₃₀₁ mode and the TE ₁₀₃ mode exist in the first-order resonator R1 at the same time. Due to the different sizes of the second-order resonator and the seventh-order resonator, the energy of the TE ₁₀₃ mode is reduced. It can only be coupled and transferred between the second-order to sixth-order resonators, and the energy of the _{TE 301} mode can only be coupled and transferred between the seventh-order resonator and the eighth-order resonator _. The resonant frequencies are not much different, showing good selectivity.

Please refer to FIGS. 8a-8b. FIGS. 8a-8b are frequency response diagrams of a glass-based wide stopband microwave duplexer provided by an embodiment of the present invention. Among them, Figure 8a is a full frequency response diagram, and its out-of-band rejection range reaches 82.66GHz. A wide stopband of the filter is achieved. Figure 8b is a schematic diagram of the frequency response of 40GHz-60GHz in Figure 8a, wherein the resonance frequency of the TE ₃₀₁ mode is 43.69GHz, and the resonance frequency of the TE ₁₀₃ mode is 45.84GHz. It can be seen that the duplexer of this embodiment has good selectivity.

The glass-based high-resistance-band microwave duplexer of this embodiment uses a dual-mode resonant cavity to replace the T-shaped structure in the traditional duplexer, and at the same time adopts a double-layer stacking method to place part of the resonant cavity on the lower glass substrate, which significantly reduces the The area of the duplexer structure is reduced, the resonant cavity and the impedance converter need not be added, and the duplexer with input and output impedances of even order and the like is realized. It uses a glass substrate instead of a silicon substrate to make a three-dimensional passive device, which can eliminate the eddy current effect in the high-frequency circuit, significantly reduce the high-frequency loss of the passive device, and improve its quality factor. Power consumption is significantly reduced, improving the quality factor of the duplexer. At the same time, the glass substrate and the three-dimensional integration technology are used, so that the feature size of the SIW structure is significantly reduced, and the resonant frequency extraction of the duplexer can be significantly improved.

The above content is a further detailed description of the present invention in combination with specific preferred embodiments, and it cannot be considered that the specific implementation of the present invention is limited to these descriptions. For those of ordinary skill in the technical field of the present invention, without departing from the concept of the present invention, some simple deductions or substitutions can be made, which should be regarded as belonging to the protection scope of the present invention.

Claims (10)

1. A glass-based wide stop-band microwave duplexer, characterized in that it comprises: a first metal layer (1), a first dielectric layer (2), a second metal layer (3), a bonding layer stacked in sequence (7), a third metal layer (4), a second dielectric layer (5) and a fourth metal layer (6), wherein, The first metal layer (1) is provided with an input port (11), a first output port (13) and a second output port (15); A plurality of first conductor pillars (8) penetrate through the first dielectric layer (2), the plurality of first conductor pillars (8) and the first metal layer (1) and the second metal layer (3) forming a first-order resonant cavity (R1), a second-order resonant cavity (R2), a fifth-order resonant cavity (R5), a sixth-order resonant cavity (R6), a seventh-order resonant cavity (R7), and a seventh-order resonant cavity (R7) The eighth-order resonant cavity (R8), the second-order resonant cavity (R2) and the fifth-order resonant cavity (R5) are arranged in parallel, the first-order resonant cavity (R1), the seventh-order resonant cavity (R7) and the eighth-order resonant cavity (R8) are arranged side by side and located on one side of the second-order resonant cavity (R2) and the fifth-order resonant cavity (R5), and the sixth-order resonant cavity (R6) is located on the other side of the second-order resonant cavity (R2) and the fifth-order resonant cavity (R5), the first-order resonant cavity (R1) and the second-order resonant cavity (R2) ) is provided with a first coupling window (23), a third coupling window (25) is provided between the fifth-order resonant cavity (R5) and the sixth-order resonant cavity (R6), and the first A fourth coupling window (26) and a fifth coupling window (27) are arranged between the order resonator (R1) and the seventh order resonator (R7), and the seventh order resonator (R7) and A sixth coupling window (28) and a seventh coupling window (29) are arranged between the eighth-order resonators (R8), and the input port (11) is located in the first-order resonator (R1) the top of the resonator, the first output port (13) is located on the top of the sixth-order resonant cavity (R6), and the second output port (15) is located on the top of the eighth-order resonant cavity (R8); The second metal layer (3) is provided with a first radiation window (17), a second radiation window (18), a third radiation window (19), a fourth radiation window (20), and a fifth radiation window (21) ) and a sixth radiation window (22), the first radiation window (17), the third radiation window (19) and the fourth radiation window (20) are arranged in the second order resonant cavity (R2 ), the second radiation window (18), the fifth radiation window (21) and the sixth radiation window (22) are arranged at the bottom of the fifth-order resonant cavity (R5); The third metal layer (4) is provided with a seventh radiation window (30), an eighth radiation window (31), a ninth radiation window (32), a tenth radiation window (33), and an eleventh radiation window ( 34) and the twelfth radiation window (35), the seventh radiation window (30), the eighth radiation window (31), the ninth radiation window (32), the tenth radiation window (33) ), the eleventh radiation window (34) and the twelfth radiation window (35) and the first radiation window (17), the second radiation window (18), the third radiation window (19), the fourth radiation window (20), the fifth radiation window (21), and the sixth radiation window (22) are in one-to-one correspondence; A plurality of second conductor pillars (9) penetrate through the second dielectric layer (5), the plurality of second conductor pillars (9) and the third metal layer (4) and the fourth metal layer (6) forming a third-order resonant cavity (R3) and a fourth-order resonant cavity (R4), the third-order resonant cavity (R3) corresponds to the second-order resonant cavity (R2), and the fourth-order resonant cavity (R3) corresponds to the second-order resonant cavity (R2). The first-order resonant cavity (R4) corresponds to the fifth-order resonant cavity (R5), and a second coupling window ( twenty four); The fourth metal layer (6) is grounded. 2 . The glass-based wide stop-band microwave duplexer according to claim 1 , wherein a first groove ( 12 ) and a second groove are formed on the side wall of the first metal layer ( 1 ). 3 . (14) and the third groove (16), wherein, The input port (11) is arranged in the first groove (12), the first output port (13) is arranged in the second groove (14), and the second output port (15) ) is located in the third groove (16). 3. glass-based wide stopband microwave duplexer according to claim 1, is characterized in that, The resonance modes of the first-order resonant cavity (R1) are TE ₁₀₃ and TE ₃₀₁ ; The second-order resonant cavity (R2), the third-order resonant cavity (R3), the fourth-order resonant cavity (R4), the fifth-order resonant cavity (R5), and the seventh-order resonator The resonant mode of the cavity (R7) and the eighth-order resonant cavity (R8) is TE ₁₀₁ ; The resonance mode of the sixth-order resonant cavity (R6) is TE ₁₀₃ . 4. The glass-based wide stopband microwave duplexer according to claim 3, wherein the resonant frequency of the TE ₁₀₃ resonant mode in the first-order resonant cavity (R1) is the same as that of the second-order resonant cavity (R1). The resonant frequencies of the TE ₁₀₁ resonant modes in R2) are the same. 5. The glass-based wide stop-band microwave duplexer according to claim 1, wherein the first-order resonant cavity (R1), the second-order resonant cavity (R2), and the third-order resonant cavity (R2) The resonant cavity (R3), the fourth-order resonant cavity (R4), the fifth-order resonant cavity (R5), the seventh-order resonant cavity (R7), and the eighth-order resonant cavity (R8) are all is a rectangular resonant cavity; The sixth-order resonant cavity (R6) is formed by a first part (R61), a second part (R62) and a third part (R63) that communicate with each other, the first part (R61), the second part (R62) ) and the third portion (R63) are both rectangular in shape. 6. The glass-based wide stop-band microwave duplexer according to claim 5, wherein the length of the third part (R63), the first part (R61), and the second part (R62) The widths of the first portion (R61), the second portion (R62), and the third portion (R63) increase sequentially. 7 . The glass-based wide stop-band microwave duplexer according to claim 6 , wherein the first-order resonant cavity ( R1 ) has a length of 5540 μm and a width of 5272 μm, and the first-order resonant cavity ( R1) The width of the input side is 2038 μm, and the width of the input side of the sixth-order resonant cavity (R6) is 2300 μm; The length of the second-order resonant cavity (R2) is 2400 μm and the width is 2378 μm; The fifth-order resonant cavity (R5) has a length of 2400 μm and a width of 2391 μm; The first part (R61) has a length of 1620 μm and a width of 5330 μm; the second part (R62) has a length of 2450 μm and a width of 5339 μm; the third part (R63) has a length of 1470 μm and a width of 5352 μm; The length of the seventh-order resonant cavity (R7) and the eighth-order resonant cavity (R8) are both 1820 μm, the width w ₁₃ is 5900 μm, and the width w ₁₅ of the output side of the eighth-order resonant cavity ( R8 ) is 2620μm; The length of the third-order resonant cavity (R3) and the fourth-order resonant cavity (R4) are both 2400 μm and 2415 μm in width. 8. The glass-based wide stop-band microwave duplexer according to claim 1, wherein the first radiation window (17) is arranged in the third radiation window (19) and the fourth radiation window (20), the second radiation window (18) is arranged between the fifth radiation window (21) and the sixth radiation window (22). 9 . The glass-based wide stop-band microwave duplexer according to claim 1 , wherein the shape of the first radiation window ( 17 ) is circular, and its diameter is 504 μm; 10 . The shape of the second radiation window (18) is circular, and its diameter is 484 μm; The third radiation window (19), the fourth radiation window (20), the fifth radiation window (21) and the sixth radiation window (22) are all rectangular in shape, and their lengths are all 100 μm , the width is 300μm; The distance between the third radiation window (19) and the fourth radiation window (20), and the distance between the fifth radiation window (21) and the sixth radiation window (22) are both 2000 μm . 10 . The glass-based wide stop-band microwave duplexer according to claim 1 , further comprising an adhesive layer ( 10 ), and the adhesive layer ( 10 ) is arranged on the bonding layer ( 7 ). 11 . and around the third metal layer (4) and between the second metal layer (3) and the second dielectric layer (5).

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