CN109638397A - A kind of double stacked declines pass band filter - Google Patents

A kind of double stacked declines pass band filter Download PDF

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Publication number
CN109638397A
CN109638397A CN201811307907.7A CN201811307907A CN109638397A CN 109638397 A CN109638397 A CN 109638397A CN 201811307907 A CN201811307907 A CN 201811307907A CN 109638397 A CN109638397 A CN 109638397A
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resonant cavity
glass substrate
metal layer
rank
declines
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CN109638397B (en
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刘晓贤
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Xidian University
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Xidian University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/207—Hollow waveguide filters
    • H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure

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Abstract

It declines pass band filter the present invention relates to a kind of double stacked, including upper metal layer, top glass substrate, intermediate metal layer, lower glass substrate and the lower metal layer set gradually from top to bottom, wherein, the first sheet metal and the second sheet metal are respectively arranged in the opposing sidewalls of the upper metal layer；Multiple top glass substrate through-holes are provided in the top glass substrate, inside be separately filled with the first metallic conductor column；The first radiation window and the second radiation window are provided on the intermediate metal layer；Multiple lower glass substrate through-holes are provided in the lower glass substrate, inside be separately filled with the second metallic conductor column.Filter of the invention uses three-dimensional integration technology and glass substrate, on the one hand the area of the filter construction is significantly reduced, another aspect glass substrate can eliminate the eddy current effect in high-frequency circuit, so that the power consumption of filter of the invention significantly reduces, improve the quality factor of filter.

Description

A kind of double stacked declines pass band filter
Technical field
The invention belongs to IC manufacturings and encapsulation technology field, and in particular to a kind of double stacked type micro-wave band logical filter Wave device.
Background technique
In recent years due to the driving of business application, millimeter wave wireless communication is able to swift and violent development, most millimeter waves Interconnection and passive device are all waveguide forms, are lost all lower.However, the volume of waveguiding structure is generally all larger, it is produced into This is higher, and is difficult to integrate on one system with monolithic integrated microwave circuit (MMICs).The low temperature co-fired pottery occurred later Porcelain (LTCC) is although with stable dielectric constant and lower loss, its thicker substrate in microwave and millimeter wave frequency band Its extensive use is also significantly limited with biggish volume.
Three-dimensional integration technology is by traditional two-dimensional integrated circuit vertical stacking, and through silicon via is as three dimensional integrated circuits Middle key structure transmits for realizing the signal of three dimensional integrated circuits upper and lower level chip chamber, realizes that interlayer is vertical by through silicon via Interconnection and encapsulation, to significantly improve integrated level, while reducing power consumption, improve system performance.Utilize through silicon via three-dimensional Substrate integration wave-guide (SIW) structure is integrated on the chip in three dimension system by integrated technology, can be with other isomeries Chip realization is three-dimensionally integrated, to be substantially reduced the volume of entire microwave circuit system.But since bulk silicon substrate is in high frequency Under the conditions of there is biggish loss, hinder extensive use of the substrate integrated wave guide structure in three-dimensionally integrated.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of filters of double stacked type micro-wave band logical Wave device.The technical problem to be solved in the present invention is achieved through the following technical solutions:
It declines pass band filter the present invention provides a kind of double stacked, including the upper metal set gradually from top to bottom Layer, top glass substrate, intermediate metal layer, lower glass substrate, lower metal layer, wherein
The first sheet metal and the second sheet metal are respectively arranged in the opposing sidewalls of the upper metal layer；
It is provided with multiple top glass substrate through-holes in the top glass substrate, is filled with inside the top glass substrate through-hole First metallic conductor column；
The first radiation window and the second radiation window, first radiation window and institute are provided on the intermediate metal layer State top glass substrate described in the equal connection of the second radiation window and the lower glass substrate；
It is provided with multiple lower glass substrate through-holes in the lower glass substrate, is filled out respectively inside the lower glass substrate through-hole Filled with the second metallic conductor column.
In one embodiment of the invention, the first groove and are offered in the opposing sidewalls of the upper metal layer respectively Two grooves, first sheet metal and second sheet metal are separately positioned in first groove and second groove.
In one embodiment of the invention, multiple top glass substrate through-holes are distributed in the upper glass in matrix pattern On substrate.
In one embodiment of the invention, the both ends of the first metallic conductor column be separately connected the upper metal layer and The intermediate metal layer, and it is humorous with the upper metal layer and the intermediate metal layer input resonator, the first rank to be collectively formed Shake chamber, fourth order resonant cavity and output cavity, wherein and first groove is arranged in the input resonator, and described the Two grooves are arranged in the output cavity.
In one embodiment of the invention, first is provided between the input resonator and the first rank resonant cavity Window is coupled, for realizing the magnetic coupling between the input resonator and the first rank resonant cavity；The fourth order resonance It is provided with second between chamber and the output cavity and couples window, it is humorous for realizing the fourth order resonant cavity and the output Magnetic coupling between vibration chamber.
In one embodiment of the invention, first radiation window and second radiation window are circular shape, Wherein, first radiation window is located at the lower section of the first rank resonant cavity；Second radiation window is located at the described 4th The lower section of rank resonant cavity.
In one embodiment of the invention, the length of the lower glass substrate is the half of the top glass substrate, and Multiple lower glass substrate through-holes are distributed in the lower glass substrate in day font.
In one embodiment of the invention, the both ends of the second metallic conductor column are separately connected the intermediate metal layer With the lower metal layer, the second metallic conductor column, the intermediate metal layer and the lower metal layer form second-order resonance Chamber and third rank resonant cavity；Third, which is provided with, between the second-order resonant cavity and the third rank resonant cavity couples window, institute Third coupling window is stated for realizing the magnetic coupling between the second-order resonant cavity and the third rank resonant cavity.
In one embodiment of the invention, the second-order resonant cavity is located at the lower section of the first rank resonant cavity, institute Second-order resonant cavity and the first rank resonant cavity is stated to be electrically coupled by first radiation window realization；The third rank resonance Chamber is located at the lower section of the fourth order resonant cavity, and the third rank resonant cavity and the fourth order resonant cavity pass through second spoke Window realization is penetrated to be electrically coupled.
In one embodiment of the invention, the upper metal layer, intermediate metal layer, the lower metal layer, described The material of first metallic conductor column and the second metallic conductor column is copper.
Compared with prior art, the beneficial effects of the present invention are:
1, using the method for double stacked, partial resonance chamber is placed in lower glass substrate, significantly reduces the filtering The area of device structure realizes the band logical microwave of the input and output impedance such as even-order without increasing resonant cavity and impedance transformer Filter.
2, the relative dielectric constant of glass is much smaller than silicon substrate, replaces the three-dimensional passive device of silicon substrate production using glass substrate Part can eliminate the eddy current effect in high-frequency circuit, significantly reduce the high-frequency loss of passive device, improve its quality because Number, so that the power consumption of filter of the invention significantly reduces, improves the quality factor of filter.
3, using glass substrate and three-dimensional integration technology, so that the characteristic size of SIW structure is substantially reduced, so that this The resonance frequency extraction of the filter of invention is significantly improved.
Detailed description of the invention
Fig. 1 is that the double stacked of the present embodiment declines the structural front view of pass band filter；
Fig. 2 a be the present embodiment double stacked decline pass band filter upper metal layer top view；
Fig. 2 b be the present embodiment double stacked decline pass band filter intermediate metal layer top view；
Fig. 2 c be the present embodiment double stacked decline pass band filter lower metal layer top view；
Fig. 3 is that the double stacked of the present embodiment declines the coupling mechanism schematic diagram of pass band filter；
Fig. 4 is the schematic diagram of a square resonant cavity cross section of the present embodiment filter；
Fig. 5 is the coefficient of coup k of the present embodiment filter12HFSS simulation model figure；
Fig. 6 is the coefficient of coup k of the present embodiment filter23HFSS simulation model figure；
Fig. 7 is the external sort factor Q of the present embodiment filterEExtract the cross-sectional view of model；
Fig. 8 is the frequency response chart of the present embodiment filter.
Description of symbols:
The upper metal layer of 1-；2- top glass substrate；3- intermediate metal layer；4- lower glass substrate；5- lower metal layer；6- input terminal Mouthful；7- output port；8- top glass substrate through-hole；The first radiation window of 9-；The second radiation window of 10-；11- lower glass substrate is logical Hole；The first groove of 12-；The second groove of 13-；14- first couples window；15- second couples window；16- third couples window；S- Input resonator；L- output cavity；R1- the first rank resonant cavity；R2- second-order resonant cavity；R3- third rank resonant cavity；R4- Quadravalence resonant cavity.
Specific embodiment
The content of present invention is further described combined with specific embodiments below, but embodiments of the present invention are not limited to This.
The EMR electromagnetic resonance mode of the filter of the present embodiment is TE101, passband 75GHz-80GHz.Incorporated by reference to Fig. 1 and figure 2a- Fig. 2 c, Fig. 1 are that the double stacked of the present embodiment declines the structural front view of pass band filter, and Fig. 2 a- Fig. 2 c is this respectively The double stacked of embodiment declines the upper metal layer of pass band filter, the top view of intermediate metal layer and lower metal layer, such as schemes Shown, the double stacked of the present embodiment declines pass band filter, including upper metal layer 1, the upper glass set gradually from top to bottom Glass substrate 2, intermediate metal layer 3, lower glass substrate 4 and lower metal layer 5, wherein set respectively in the opposing sidewalls of upper metal layer 1 It is equipped with the first sheet metal 6 and the second sheet metal 7, the first sheet metal 6 and the second sheet metal 7 are rectangular shape, its long l1It is 970 μm, width w1It is 254 μm.Multiple top glass substrate through-holes 8 are provided in top glass substrate 2, top glass substrate through-hole 8 can pass through Etching obtains, the diameter d of each top glass substrate through-hole 8TGVBe 25 μm, inside be separately filled with the first metallic conductor column.In Between be provided with the first radiation window 9 and the second radiation window 10, the first radiation window 9 and the second radiation window 10 on metal layer 3 It can be obtained by etching, the first radiation window 9 and the equal connection top glass substrate 2 of the second radiation window 10 and lower glass substrate 4. Multiple lower glass substrate through-holes 11 are provided in lower glass substrate 4, lower glass substrate through-hole 11 can be obtained by etching, each The diameter d of lower glass substrate through-hole 11TGVIt is 25 μm, it is internal to be filled with the second metallic conductor column.
Specifically, upper metal layer 1 is grounded, and upper layer substrate of the top glass substrate 2 as the present embodiment filter, intermetallic metal Layer 3 is used as the shared ground plane of top glass substrate 2 and lower glass substrate 4, and lower glass substrate 4 is as under the present embodiment filter Layer substrate, lower metal layer 5 are used to moving into the charge on upper metal layer 1 into the earth in time；First sheet metal 6 and the second sheet metal 7 Respectively as the input port and output port of the present embodiment filter, the input port and output port are respectively used to input With output electromagnetic wave.Further, the first groove 12 and the second groove 13 are offered respectively in the opposing sidewalls of upper metal layer 1, First sheet metal 6 and the second sheet metal 7 are separately positioned in the first groove 12 and the second groove 13, the first sheet metal 6 and second Sheet metal 7 exceeds the length l of the first groove 12 and the second groove 13 respectively2It is 345 μm, the first groove 12 and the second groove 13 Groove width w2It is 264 μm；The first metallic conductor column and top glass substrate 2 constitute ground connection grid structure, lower metal layer 5 and upper metal Layer 1, intermediate metal layer 3, the first metallic conductor column and the second metallic conductor column form closed filter cavity.
Further, multiple top glass substrate through-holes 8 are distributed in top glass substrate 2 in matrix pattern, each upper glass base Center spacing p between plate through-hole 8TGVIt is 50 μm, the first metallic conductor column is filled in multiple top glass substrate through-holes respectively 8 inside, its both ends are separately connected metal layer 1 and intermediate metal layer 3, and total with upper metal layer 1 and intermediate metal layer 3 With formation input resonator S, the first rank resonant cavity R1, fourth order resonant cavity R4 and output cavity L.Further, first is recessed Slot 12 is arranged in input resonator S, and the second groove 13 is arranged in output cavity L.In the present embodiment, input resonator S, the first rank resonant cavity R1, fourth order resonant cavity R4 and output cavity L are square resonant cavity, and side length w is 1190 μ m。
Further, first is provided between input resonator S and the first rank resonant cavity R1 couple window 14, specifically, In the not set top glass substrate through-hole 8 in middle section that input resonator S is connect with the first rank resonant cavity R1, so as to form One coupling window 14, window width wS1It is 254 μm, it is for realizing the magnetic between input resonator S and the first rank resonant cavity R1 Coupling；It is provided with second between fourth order resonant cavity R4 and output cavity L and couples window 15, in fourth order resonant cavity R4 and defeated The not set top glass substrate through-hole 8 in the middle section of resonant cavity L connection out, so as to form the second coupling window 15, window is wide Spend wL4It is 254 μm, it is for realizing the magnetic coupling between fourth order resonant cavity R4 and output cavity L.
Further, the first radiation window 9 and the second radiation window 10 are circular shape, the first radiation window 9 and the The diameter d of two radiation windows 10CIt is 352 μm, the first radiation window 9 is located at the bottom of the first rank resonant cavity R1, the second rediation aperture Mouth 10 is located at the bottom of fourth order resonant cavity R4.The length of lower glass substrate 4 is the half of the top glass substrate 2, under multiple Glass substrate logical 11 is distributed in lower glass substrate 4 in day font, the center spacing p between each lower glass substrate through-hole 11TGV It is 50 μm, the second metallic conductor column is filled in the inside of multiple lower glass substrate through-holes 11 respectively, its both ends connect respectively It connects intermediate metal layer 3 and lower metal layer 5 forms second-order resonant cavity R2 and third rank resonant cavity R3, specifically, second-order resonance Chamber R2 and third rank resonant cavity R3 is square resonant cavity, and side length w is 1190 μm.Second-order resonant cavity R2 and third rank Third coupling window 16 is provided between resonant cavity R3, in the middle part that second-order resonant cavity R2 is connect with third rank resonant cavity R3 Divide not set lower glass substrate through-hole 11, couples window 16, window width w so as to form third23It is 424 μm, it is for real Magnetic coupling between existing second-order resonant cavity R2 and third rank resonant cavity R3.
Specifically, second-order resonant cavity R2 is located at the lower section of the first rank resonant cavity R1, second-order resonant cavity R2 and the first rank Resonant cavity R1 is electrically coupled by the realization of the first radiation window 9；Third rank resonant cavity R3 is located at the lower section of fourth order resonant cavity R4, the Three rank resonant cavity R3 and fourth order resonant cavity R4 are electrically coupled by the realization of the second radiation window 10.
Specifically, upper metal layer 1, intermediate metal layer 3, lower metal layer 5, the first metallic conductor column and second gold medal The material for belonging to conductor pin is copper.
Refer to Fig. 3, Fig. 3 is that double stacked declines the coupling mechanism schematic diagram of pass band filter, as shown, K12Table Show the coefficient of coup between the first rank resonant cavity R1 and second-order resonant cavity R2, K23Indicate that second-order resonant cavity R2 and third rank are humorous The coefficient of coup between vibration chamber R3, K34Indicate the coefficient of coup between third rank resonant cavity R3 and fourth order resonant cavity R4, QETable Show the external sort factor of resonant cavity.Specifically, input resonator S couples window 14 in fact by first with the first rank resonant cavity R1 Existing magnetic coupling；First rank resonant cavity R1 and second-order resonant cavity R2 is electrically coupled by the realization of the first radiation window 9；Second-order resonance Chamber R2 couples window 16 by third with third rank resonant cavity R3 and realizes magnetic coupling；Third rank resonant cavity R3 and fourth order resonant cavity R4 is electrically coupled by the realization of the second radiation window 10；Fourth order resonant cavity R4 couples window 13 by second with output cavity L Realize magnetic coupling.
The course of work of the present embodiment filter is as follows: firstly, the electromagnetic wave of required filtering is inputted from the input port To input resonator S；Then, it is magnetically coupled by the first coupling window 14 and is transmitted to the first resonant cavity R1, due to inputting Magnetic coupling is used between resonant cavity S and the first rank resonant cavity R1, the magnetic coupling mode is while propagating TE101 mode electromagnetic wave It can inhibit the electromagnetic wave propagation of TE102 mode, so that the energy of TE102 mode can not propagate to the first rank resonant cavity R1； Later, the electromagnetic wave is transmitted to the second resonant cavity R2 by the first radiation window 9, and coupled modes are electric coupling；Subsequently, institute State electromagnetic wave continue through third coupling window 16 third resonant cavity R3 is transmitted in a manner of magnetic-coupled；Later, the electromagnetism Wave is transmitted to the 4th resonant cavity R4 the second radiation window 10 again in a manner of electric coupling, finally, the electromagnetic wave passes through the Two coupling windows 13, which are magnetically coupled, is transmitted to output cavity L, then exports from the output port.
When filter of the embodiment of the present invention works, TE102 mode can be inhibited while propagating TE101 mode electromagnetic wave Electromagnetic wave so that the energy of TE102 mode can not be between input resonator S and the first rank resonant cavity R1 and fourth order Transmitting is coupled between resonant cavity R4 and output cavity L, i.e., the parasitic passband as caused by higher mode electromagnetism wave resonance is complete It eliminates, and then obtains the microwave band-pass filter with ultra-wide stopband, significantly improve the squareness factor of the filter.
The double stacked of the present embodiment declines the design method of pass band filter, comprising the following steps:
S1: the calculating of Chebyshev filter low-pass prototype parameter.
Complex frequency is converted in the domain s, transformation for mula is as follows:
Wherein, ΩaIt is the first positive root of even-order Chebyshev polynomials, can be calculated by following formula:
Wherein, n is even number.By s=j Ω (Ω >=Ωa) and s '=j Ω ' substitution formula (1), Ω and Ω ' can be indicated Are as follows:
T'n(Ω ')=Tn(Ω)/Ω2 (4)
Pass through formula (3)~(5), even-order Chebyshev polynomials T 'n(Ω) can be modified to (6).
Quadravalence Tn(Ω) and T 'n(Ω) can be respectively indicated are as follows:
T4(Ω)=8 Ω4-8Ω2+1 (7)
For any Two-port netwerk filter, transmission characteristic can be indicated by transmission equation H (s) and reflection equation K (s):
For Chebyshev filter, transmission equation H (s) may be expressed as: with reflection equation K (s)
Wherein, ε is a real number, and P (s) is a constant, and calculation formula is respectively as follows:
Wherein, APFor passband ripple, 0.5dB is selected as in the present embodiment.Then its input impedance may be expressed as:
Formula (8) are substituted into formula (11)~(12), integrate s '=j Ω ', | H (s) |2, | K (s) |2, E (s) and F (s) It respectively indicates are as follows:
|H(s)|2=4.14437s8+6.86661s6+2.84414s4+1 (16)
|K(s)|2=4.14437s8+6.86661s6+2.84414s4 (17)
E (s)=s4+1.52788s3+1.99563s2+1.40021s+0.49122 (18)
F (s)=s4+0.82843s2 (19)
It is calculated by polynomial division, it can be by input impedance Zin(s) it indicates are as follows:
By calculating above, it can extract Chebyshev filter low-pass prototype parameter, be respectively as follows: g0=1, g1=g4= 1.309 g2=g3=1.542, g5=1, it is used for following coefficients of coup and calculates.
S2: the design and calculating of filter overall dimensions.
S21: resonant cavity size calculates；
The EMR electromagnetic resonance mode of the filter of the present embodiment is TE101, passband 75GHz-80GHz, then centre frequency are as follows:
F can be obtained by (21)0=77.45GHz.
f0With the size relationship of equivalent rectangular waveguide are as follows:
Wherein, weffWith leffThe respectively width and length of equivalent rectangular waveguide, the relation with SIW resonant cavity size It does not indicate are as follows:
For square SIW resonant cavity, then there is weff=leff, therefore formula (22) can simplify are as follows:
In conjunction with f0W can be calculated in=77.45GHzeff=1200 μm, SIW square is finally acquired further according to formula (23) W=1200 μm of the side length of resonant cavity.According to SIW resonant cavity size calculated, (HFSS) 3 D electromagnetic is emulated in high-frequency structure It being modeled in simulation software, refers to Fig. 4, Fig. 4 is the schematic diagram of a square resonant cavity cross section of the present embodiment filter, As shown, the diameter d of substrate through-holeTGV=25 μm, the center spacing p between two substrate through-holesTGV=50 μm, square is humorous The side length w of vibration chamber is 1200 μm, and mode of resonance is set as 1.It is obtained through emulation adjustment, when w is 1190 μm in SIW resonant cavity Frequency of heart is 77.45GHz.
S22: the coefficient of coup calculates；
G is calculated by S11~g5Value, the coefficient of coup between resonant cavity further can be obtained, its calculation formula is:
Wherein, FBW is the relative bandwidth of SIW bandpass filter, its calculation formula is:
Therefore, k can be calculated12=k34=0.0454, k23=0.0419.
Fig. 5 is referred to, Fig. 5 is the coefficient of coup k of the present embodiment filter12HFSS simulation model figure, as shown, It is coupled as being electrically coupled between single order resonant cavity R1 and second-order resonant cavity R2, coupling window is the first radiation window 9, and coupling is strong Degree is d by the diameter of coupling windowCIt determines, dCBigger coupling is stronger.Mode of resonance is set as 2, emulates and two resonance can be obtained Frequency f1With f2, according to f1With f2K can be calculated12Are as follows:
It is obtained through emulation adjustment, works as dCCoupling when being 352 μm between the first rank resonant cavity R1 and second-order resonant cavity R2 Coefficient k12=0.0454.
Similarly, the coupling window between third rank resonant cavity R3 and fourth order resonant cavity R4, i.e. the second radiation window 10 Diameter is 352 μm.
Fig. 6 is referred to, Fig. 6 is the coefficient of coup k of the present embodiment filter23HFSS simulation model figure, as shown, It is coupled as magnetic coupling between second order resonant cavity R2 and third rank resonant cavity R3, coupling window is that third couples window 16, coupling Intensity is w by the width of coupling window23It determines, w23Bigger coupling is stronger.Mode of resonance is set as 2, and emulation available two humorous Vibration frequency f1With f2, k12Still it is calculated by formula (28).It is obtained through emulation adjustment, works as w23Second-order resonant cavity R2 when being 424 μm With the coefficient of coup k between third rank resonant cavity R323=0.0419.
S23: external sort factor QEIt calculates
The external sort factor Q of resonant cavityEIt is calculated by following formula:
It can be calculated QE=20.2789.
In HFSS 3 D electromagnetic simulation software, external sort factor QEIt can be expressed from the next:
Wherein, ω0=2 π f0, QEIt is proportional to the S11 group delay τ of resonatorS11, therefore it is imitative to calculate HFSS 3 D electromagnetic τ in true softwareS11Theoretical value be 1.66 × 10-10s.Fig. 7 is referred to, Fig. 7 is the external sort factor of the present embodiment filter QEThe cross-sectional view for extracting model, as shown, being modeled in HFSS 3 D electromagnetic simulation software, when each parameter is adjusted respectively It is whole are as follows: w=1190 μm, w1=254 μm, w2=264 μm, wSL=254 μm, l1=970 μm, l2At=345 μm, τS11Simulation value Reach maximum value 1.66 × 10-10S, and the position of maximum value is in f0=77.45GHz.
According to calculated result described above, each resonant cavity is integrated according to the coupling mechanism, finally obtains this The double stacked of embodiment declines pass band filter, wherein the first coupling between input resonator S and the first rank resonant cavity R1 Close the width w of window 14S1=wSL=254 μm, second between output cavity L and fourth order resonant cavity R4 couples window 15 Width wL4=wSL=254 μm.
Refer to Fig. 8, Fig. 8 is the frequency response chart of the present embodiment filter, as shown, higher mode electromagnetic wave, i.e., from TE101 mode it is nearest such as TE102 mode, resonance frequency 122.47GHz, the parasitic passband as caused by its resonance is complete It totally disappeared and remove, and then obtain the microwave band-pass filter with ultra-wide stopband, significantly improve the squareness factor of the filter.
Double stacked glass substrate integrated waveguide ultra-wide stopband microwave band-pass filter of the invention, using double stacked Partial resonance chamber is placed in lower glass substrate by method, the area of the filter construction is significantly reduced, without increasing resonance Chamber and impedance transformer realize the band logical microwave filter of the input and output impedance such as even-order.It is replaced using glass substrate Silicon substrate makes three-dimensional passive device, can eliminate the eddy current effect in high-frequency circuit, significantly reduce the high frequency of passive device Loss, improves its quality factor so that the power consumption of filter of the invention significantly reduces, improve the quality of filter because Number.Glass substrate and three-dimensional integration technology are used simultaneously, so that the characteristic size of SIW structure is substantially reduced, so that this hair The resonance frequency extraction of bright filter is significantly improved.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention Protection scope.

Claims (10)

  1. The pass band filter 1. a kind of double stacked declines, which is characterized in that including the upper metal layer set gradually from top to bottom (1), top glass substrate (2), intermediate metal layer (3), lower glass substrate (4) and lower metal layer (5), wherein
    The first sheet metal (6) and the second sheet metal (7) are respectively arranged in the opposing sidewalls of the upper metal layer (1)；
    Multiple top glass substrate through-holes (8) are provided on the top glass substrate (2), the top glass substrate through-hole (8) is internal Filled with the first metallic conductor column；
    The first radiation window (9) and the second radiation window (10), first rediation aperture are provided on the intermediate metal layer (3) Top glass substrate (2) and the lower glass substrate (4) described in mouth (9) and second radiation window (10) connection；
    Multiple lower glass substrate through-holes (11) are provided on the lower glass substrate (4), the lower glass substrate through-hole (11) is interior Portion is filled with the second metallic conductor column.
  2. The pass band filter 2. double stacked according to claim 1 declines, which is characterized in that the upper metal layer (1) Opposing sidewalls on offer the first groove (12) and the second groove (13), first sheet metal (6) and described second respectively Sheet metal (7) is separately positioned in first groove (12) and second groove (13).
  3. The pass band filter 3. double stacked according to claim 2 declines, which is characterized in that multiple upper glass bases Plate through-hole (8) is distributed on the top glass substrate (2) in matrix pattern.
  4. 4. double stacked declines pass band filter according to claim 3, which is characterized in that the first metallic conductor column Both ends be separately connected the upper metal layer (1) and the intermediate metal layer (3), and with the upper metal layer (1) and described It is humorous that input resonator (S), the first rank resonant cavity (R1), fourth order resonant cavity (R4) and output is collectively formed in intermediate metal layer (3) It shakes chamber (L), wherein first groove (12) is arranged in the input resonator (S), and the second groove (13) setting exists In the output cavity (L).
  5. 5. double stacked declines pass band filter according to claim 4, which is characterized in that the input resonator (S) Be provided with first between the first rank resonant cavity (R1) and couple window (14), for realizing the input resonator (S) with Magnetic coupling between the first rank resonant cavity (R1)；Between the fourth order resonant cavity (R4) and the output cavity (L) It is provided with the second coupling window (15), for realizing between the fourth order resonant cavity (R4) and the output cavity (L) Magnetic coupling.
  6. 6. double stacked declines pass band filter according to claim 5, which is characterized in that first radiation window (9) and second radiation window (10) is circular shape, wherein
    First radiation window (9) is located at the lower section of the first rank resonant cavity (R1)；
    Second radiation window (10) is located at the lower section of the fourth order resonant cavity (R4).
  7. 7. double stacked declines pass band filter according to claim 6, which is characterized in that the lower glass substrate (4) Length be the top glass substrate (2) half, and multiple lower glass substrate through-holes (11) are distributed in institute in day font It states on lower glass substrate (4).
  8. 8. double stacked declines pass band filter according to claim 7, which is characterized in that the second metallic conductor column Both ends be separately connected the intermediate metal layer (4) and the lower metal layer (5), wherein it is the second metallic conductor column, described Intermediate metal layer (4) and the lower metal layer (5) form second-order resonant cavity (R2) and third rank resonant cavity (R3)；Described second It is provided with third between rank resonant cavity (R2) and the third rank resonant cavity (R3) to couple window (16), the third couples window (16) for realizing the magnetic coupling between the second-order resonant cavity (R2) and the third rank resonant cavity (R3).
  9. 9. double stacked declines pass band filter according to claim 8, which is characterized in that the second-order resonant cavity (R2) it is located at the lower section of the first rank resonant cavity (R1), the second-order resonant cavity (R2) and the first rank resonant cavity (R1) It is realized and is electrically coupled by first radiation window (9)；The third rank resonant cavity (R3) is located at the fourth order resonant cavity (R4) lower section, the third rank resonant cavity (R3) and the fourth order resonant cavity (R4) pass through second radiation window (10) Realization is electrically coupled.
  10. 10. declining pass band filter to double stacked described in any one of 9 according to claim 1, which is characterized in that on described Metal layer (1), the intermediate metal layer (3), the lower metal layer (5), the first metallic conductor column and second metal The material of conductor pin is copper.
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