CN106410336B - A kind of three rank substrate integral wave guide filter of stack - Google Patents
A kind of three rank substrate integral wave guide filter of stack Download PDFInfo
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- CN106410336B CN106410336B CN201610864483.9A CN201610864483A CN106410336B CN 106410336 B CN106410336 B CN 106410336B CN 201610864483 A CN201610864483 A CN 201610864483A CN 106410336 B CN106410336 B CN 106410336B
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- metal layer
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- resonant cavity
- medium substrate
- intermediate metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
Abstract
The invention discloses a kind of three rank substrate integral wave guide filters of stack comprising: stack gradually topside metal layer, first medium substrate, the first intermediate metal layer, second medium substrate, the second intermediate metal layer, third medium substrate and the bottom-side metal layer of distribution；The first resonant cavity, the second resonant cavity and third resonant cavity are respectively formed on first medium substrate, second medium substrate and third medium substrate；It is provided with input port on topside metal layer, is provided with output port on bottom-side metal layer；First intermediate metal layer is used to adjust the magnetic coupling coefficient between the first resonant cavity and the second resonant cavity, to obtain first transmission zero；Second intermediate metal layer is used to adjust the electric coupling coefficient between the second resonant cavity and third resonant cavity, to obtain the second transmission zero.Three rank substrate integral wave guide filter of stack of the invention adjusts electromagnetic coupling strengths, obtains additional transmission zero, do not changing existing size simultaneously, substantially improves frequency choosing and harmonic responses.
Description
Technical field
The present invention relates to substrate integral wave guide filter technical field, in particular to a kind of three rank substrate of stack integrates wave
Waveguide filter.
Background technique
With the fast development of mobile communication and satellite communication etc., higher want is proposed to microwave integrated circuit
It asks.Highly reliable equipment requirement microwave integrated circuit should reduce circuit occupancy while meeting electricity function index as far as possible
Area.High quality factor (Q value), etc. time delays, more next with interior low insertion loss, the narrow band filter with outer high rejection characteristic
More is taken seriously.Wherein high quality factor and etc. time delays the phase of signal will not be had an impact；Lower band interpolation
Damage will not then have an impact useful frequency spectrum in trap signal；Useless frequency spectrum can then be believed with outer higher rejection characteristic
Number inhibited, so that the signal obtained is easier identified, will not be influenced by noise.
Substrate integrated waveguide technology is proposed based on the integrated thought of waveguiding structure, it is generally by double-sided copper-clad
Low loss dielectric substrate periodical plated-through hole array is introduced between metal covering up and down, metal covering upper and lower in this way is equivalent to medium
Fill the broadside of rectangular waveguide.From after substrate integrated waveguide technology generation, it is largely applied to various bandpass filterings first
It, can be due to the presence of multiple resonators while selecting characteristic by introducing multiple transmission zeros to improve its frequency in the design of device
Cause the increase of circuit area and the deterioration of logical in-band insertion loss.
It finds after being retrieved to existing substrate integral wave guide filter, in order to realize miniaturization, substrate is integrated
Waveguide vertical stacking, such as the filter delivered in TECHNOLOGY volume 55 of IEEE TRANS.ON MICROWAVE AND THEORY
Wave device (Design of vertically stacked waveguide filters in LTCC) text, passes through cascade four
Substrate integration wave-guide resonator obtains quasi- oblong nature, to achieve the purpose that improve sideband abruptness.However, its needs is more
Layer process is just able to achieve, and the parasitic character of passband is poor, inadequate for garbage signal, that is, noise degree of suppression.
Summary of the invention
The present invention is directed to above-mentioned problems of the prior art, proposes a kind of three rank substrate integration wave-guide of stack filtering
Device can be regarded as and be cascaded by two second order substrate integral wave guide filters, change the coupling of two second order filters
Coefficient properties are closed, it can be with the transmission zero of the independent control third-order filter, so that reaching improves filter frequencies selectivity
Purpose.
In order to solve the above technical problems, the present invention is achieved through the following technical solutions:
The present invention provides a kind of three rank substrate integral wave guide filter of stack comprising: stack gradually the top surface of distribution
Metal layer, the first intermediate metal layer, the second intermediate metal layer and bottom-side metal layer, wherein
Between the topside metal layer and first intermediate metal layer, in first intermediate metal layer and described second
Between be respectively arranged between metal layer and between second intermediate metal layer and the bottom-side metal layer: first medium base
Plate, second medium substrate and third medium substrate；
It is humorous that first is respectively formed on the first medium substrate, the second medium substrate and the third medium substrate
Shake chamber, the second resonant cavity and third resonant cavity；
It is provided with input port on topside metal layer, is provided with output port on the bottom-side metal layer；
First intermediate metal layer is used to adjust the magnetic coupling between first resonant cavity and second resonant cavity
Coefficient, to obtain first transmission zero；
Second intermediate metal layer is for adjusting being electrically coupled between second resonant cavity and the third resonant cavity
Coefficient, to obtain the second transmission zero.
Preferably, being provided in the first medium substrate, the second medium substrate and the third medium substrate
Metallization VIA.
Preferably, the metallization VIA in the first medium substrate includes multiple, and multiple metallization VIA edges
The edge of the first medium substrate is arranged in array, to form first resonant cavity；And/or
Metallization VIA in the second medium substrate includes multiple, and multiple metallization VIAs are along described second
The edge of medium substrate is arranged in array, to form second resonant cavity；And/or
The metallization VIA in metallization in the third medium substrate includes multiple, and multiple metallization VIAs
Edge along the third medium substrate is arranged in array, to form the third resonant cavity.
Preferably, the first aperture and the first fluting are provided on first intermediate metal layer, for obtaining in lower sideband
Take first transmission zero；
The second aperture and the second fluting are provided on second intermediate metal layer, for obtaining second in upper sideband
Transmission zero.
Preferably, the size of first aperture, first aperture deviate the centre bit of first intermediate metal layer
It sets and the size of first fluting is for adjusting the position of the first transmission zero.
Preferably, the size of second aperture, second aperture deviate the centre bit of second intermediate metal layer
The size of the distance and second fluting set is used to adjust the position of second transmission zero.
Preferably, the size of first fluting and the size of second aperture are respectively used to adjust the magnetic coupling
The size of coefficient and the electric coupling coefficient.
Preferably, the input port and the output port are the co-planar waveguide microstrip circuit that chemical attack goes out.
Preferably, the input port and the output port are filtered relative to the three rank substrate integration wave-guide of stack
Device is centrosymmetric structure.
Compared to the prior art, the invention has the following advantages that
(1) three rank substrate integral wave guide filter of stack provided by the invention can regard two second orders as and integrate wave
The vertical stacking of waveguide filter, by the mixing electricity between two substrate integral wave guide filters of analysis, magnetic coupling, realization can be with
The transmission zero of control is to obtain preferable frequency selectivity；
(2) present invention adjusts electromagnetic coupling strengths, obtains additional biography by the method in middle layer aperture and fluting
Defeated zero point compares existing filter construction, and the present invention is not changing geometric dimension simultaneously, substantially improves the choosing of its frequency and harmonic wave
Rejection characteristic；
(3) hybrid coupled is introduced in three rank substrate integration wave-guide cross-coupled filters by the present invention, in traditional three ranks
Quasi- oblong nature has been obtained in substrate integration wave-guide cross coupling structure, and high-performance is realized using novel stacking coupling topology
Substrate integration wave-guide element substantially improves its frequency and selects the increase and passband interpolation that not will cause while characteristic and circuit area
Enter the deterioration of loss；
(4) three rank substrate integral wave guide filter of stack of the invention, using chemical attack, the i.e. knot of printed circuit board
Structure, it is easy to process.
Certainly, it implements any of the products of the present invention and does not necessarily require achieving all the advantages described above at the same time.
Detailed description of the invention
Embodiments of the present invention are described further with reference to the accompanying drawing:
Fig. 1 is the structural schematic diagram of the three rank substrate waveguide filter of stack of the embodiment of the present invention；
Fig. 2 a is the structure that the magnetic coupling of the embodiment of the present invention accounts for the second order substrate integral wave guide filter of the driver's seat
Figure；
Fig. 2 b is the top view of Fig. 2 a；
Fig. 2 c be Fig. 2 a second order substrate integral wave guide filter input port to output port transfer curve
Figure；
Fig. 2 d is magnetic coupling when accounting for the driver's seat, the coefficient of coup with circular hole size rad1, off center cavity distance
The figure of changing of diff1 and gap length Ls1；
Fig. 3 a is electrically coupled the structure for accounting for the second order substrate integral wave guide filter of the driver's seat for the embodiment of the present invention
Figure；
Fig. 3 b is the top view of Fig. 3 a；
Fig. 3 c be Fig. 3 a second order substrate integral wave guide filter input port to output port transfer curve
Figure；
Fig. 4 is bandwidth in the three rank substrate integral wave guide filter of stack of the embodiment of the present invention with Ls1, the change of rad2
Change situation map；
Fig. 5 a is that the size of the input port of the three rank substrate integral wave guide filter of stack of the embodiment of the present invention is shown
It is intended to；
Fig. 5 b is that the size of the output port of the three rank substrate integral wave guide filter of stack of the embodiment of the present invention is shown
It is intended to；
Fig. 6 a is the transmission zero of the three rank substrate integral wave guide filter of stack of the embodiment of the present invention with the change of L3
Change figure；
Fig. 6 b is the transmission zero of the three rank substrate integral wave guide filter of stack of the embodiment of the present invention with the change of L4
Change figure；
Fig. 7 is the input port of the three rank substrate integral wave guide filter of stack of the embodiment of the present invention to output port
Transfer curve figure.
Label declaration: 1- topside metal layer, the first intermediate metal layer of 2-, the second intermediate metal layer of 3-, 4- bottom-side metal layer,
5- first medium substrate, 6- second medium substrate, 7- third medium substrate, 8- input port, 9- output port, 10- first are opened
Hole, the second aperture of 11-, 12- first slot, and 13- second slots.
Specific embodiment
It elaborates below to the embodiment of the present invention, the present embodiment carries out under the premise of the technical scheme of the present invention
Implement, the detailed implementation method and specific operation process are given, but protection scope of the present invention is not limited to following implementation
Example.
In conjunction with Fig. 1-Fig. 7, three rank substrate integral wave guide filter of stack of the invention is described in detail, structure
Schematic diagram is as shown in Figure 1, comprising: the topside metal layer 1 stacked gradually, the first intermediate metal layer 2, the second intermediate metal layer 3
And bottom-side metal layer 4, first medium substrate 5 is provided between topside metal layer 1 and the first intermediate metal layer 2, among first
Second medium substrate 6, the second intermediate metal layer 2 and bottom-side metal layer 4 are provided between metal layer 2 and the second intermediate metal layer 3
Between be provided with third medium substrate 7；It is provided with input interface 8 on topside metal layer 1, output is provided on bottom-side metal layer 4
Interface 9.The first resonant cavity, second humorous is respectively formed on first medium substrate 5, second medium substrate 6 and third medium substrate 7
Shake chamber and third resonant cavity.
In the present embodiment, by being set respectively in first medium substrate 5, second medium substrate 6 and third medium substrate 7
Set multiple plated-through holes, multiple plated-through holes are in array distribution along the edge of medium substrate, be respectively formed the first resonant cavity,
Second resonant cavity and third resonant cavity.
Design principle of the invention are as follows: cross-coupling coefficient matrix can behave as:
Our available two transmission zeros by the coefficient matrix:
Ω 1=M23M3L/M2L
Ω 2=MS1M12/MS2
M12 based on magnetic coupling and the two transmission zeros are controlled respectively for main M23 to be electrically coupled, when the two direction
When opposite, so that it may obtain two transmission zeros in high-low side band, to increase Out-of-band rejection, obtain preferable frequency selection
Property.
Hybrid coupled is introduced in three rank substrate integration wave-guide cross-coupled filters by the filter of the present embodiment,
Quasi- oblong nature is obtained in traditional three rank substrate integration wave-guide cross coupling structures, using novel stacking coupling topology come real
Existing high-performance substrate integration wave-guide element, substantially improve its frequency select while characteristic without the increase that will cause circuit area and
The deterioration of logical in-band insertion loss.The present embodiment can regard the combination of two second order substrate integral wave guide filters as, and one
For the filter I that the first resonant cavity and the second resonant cavity form, structural schematic diagram is as shown in Figure 2 a, is that magnetic coupling accounts for control
Status, top view is as shown in Figure 2 b, wherein having marked the diameter rad1 of the first aperture, the first aperture deviates the first intermetallic metal
The distance diff1, length Ls1, Fig. 2 c of the first fluting at the center of layer give input port to the transmission characteristic of output port |
S21 | situation of change, when Fig. 2 d gives magnetic coupling and accounts for the driver's seat, the coefficient of coup is with circular hole size rad1, off center chamber
The figure of changing of the distance diff1 and gap length Ls1 of body, the size of the first aperture is smaller, and the first fluting is longer, then magnetic coupling
Conjunction is stronger, and the distance of the center of the first intermediate metal layer can be deviateed by the size rad1 of the first aperture, the first aperture
The size Ls1 of the fluting of diff1 and first obtains first transmission zero in lower sideband.Another is humorous for the second resonant cavity and third
The filter II that the chamber that shakes forms, it is to be electrically coupled to account for the driver's seat that structural schematic diagram is as shown in Figure 3a, top view such as Fig. 3 b
Shown, wherein having marked the diameter rad2 of one or two apertures, the second aperture deviates the distance of the center of the second intermediate metal layer
Diff2, first fluting length Ls2, Fig. 3 c give output port to output port transmission characteristic | S21 | variation feelings
The size of condition, the second aperture 11 is bigger, and the second fluting is 13 shorter, then is electrically coupled stronger, can pass through the ruler for adjusting the second aperture
The size Ls2 that very little rad2, the second aperture deviate the fluting of distance diff2 and second of the center of the second intermediate metal layer exists
Upper sideband obtains the second transmission zero.
Electric field is most strong at intra resonant cavity center and magnetic field is most weak.Resonant cavity is stacked in a vertical direction, is formed
One second order filter.Aperture at cavity middle layer conductor surface center, it is main to influence being electrically coupled for second order resonant cavity, pass through tune
The size of whole aperture and the i.e. controllable electric coupling coefficient of offset distance from central cavity, aperture is bigger, distance center cavity
The offset distance the short, and being electrically coupled between cavity is stronger.It can similarly be influenced up and down in cavity middle layer conductor surface surrounding fluting
The magnetic coupling of cavity, adjusts the i.e. controllable magnetic coupling coefficient of size of fluting, and the magnetic coupling between more long then cavity of slotting is stronger.
If Fig. 4 gives in three rank substrate integral wave guide filter of stack bandwidth with Ls1, the figure of changing of rad2,
It can be by adjusting Ls1, the size Control bandwidth of rad2, Ls1, rad2 numerical value is bigger, magnetic coupling coefficient M12 and electric coupling coefficient
M23 then accordingly becomes larger, then bandwidth is wider.
If the dimensional drawing of input port 8, output port 9 is set forth in Fig. 5 a, 5b, when L3, L4 variation, transmission zero
Position also and then change, if transmission zero is set forth with the figure of changing of L3, L4 in Fig. 6 a, 6b, when L3 becomes larger,
MS1 becomes larger accordingly, so that transmission zero is deviated to lower sideband, otherwise when L4 becomes larger, M3L becomes larger, and transmission zero is to flash
Band offset.
As Fig. 7 gives the input port of three rank substrate integral wave guide filter of stack to the transmission characteristic of output port
| S21 | simulation result, it is determined that its bandwidth of operation, two transmission zero locations demonstrate the effect of the filter of the present embodiment
Fruit.
In the present embodiment, during input interface 8 and output interface 9 relative to three rank substrate integral wave guide filter of stack be in
Heart symmetrical structure is convenient for structure optimization.
In preferred embodiment, the output interface 9 on input interface 8 and bottom-side metal layer 4 on topside metal layer 1 is to pass through
The co-planar waveguide microstrip circuit of chemical attack production, it is convenient that the processing is simple.
Disclosed herein is merely a preferred embodiment of the present invention, these embodiments are chosen and specifically described to this specification, is
Principle and practical application in order to better explain the present invention is not limitation of the invention.Anyone skilled in the art
The modifications and variations done within the scope of specification should all be fallen in the range of of the invention protect.
Claims (7)
1. a kind of three rank substrate integral wave guide filter of stack characterized by comprising stack gradually the topside metal of distribution
Layer, the first intermediate metal layer, the second intermediate metal layer and bottom-side metal layer, wherein
Between the topside metal layer and first intermediate metal layer, first intermediate metal layer and the gold among second
Belong between layer and be respectively arranged between second intermediate metal layer and the bottom-side metal layer: first medium substrate, the
Second medium substrate and third medium substrate；
The first resonance is respectively formed on the first medium substrate, the second medium substrate and the third medium substrate
Chamber, the second resonant cavity and third resonant cavity；
It is provided with input port on topside metal layer, is provided with output port on the bottom-side metal layer；
The first aperture and the first fluting are provided on first intermediate metal layer, first intermediate metal layer is for adjusting
Magnetic coupling coefficient between first resonant cavity and second resonant cavity, to obtain first transmission zero；
The second aperture and the second fluting are provided on second intermediate metal layer, second intermediate metal layer is for adjusting
Electric coupling coefficient between second resonant cavity and the third resonant cavity, to obtain the second transmission zero；
Metallization VIA is provided in the first medium substrate, the second medium substrate and the third medium substrate；
Metallization VIA in the first medium substrate includes multiple, and multiple metallization VIAs are along the first medium
The edge of substrate is arranged in array, to form first resonant cavity；And/or
Metallization VIA in the second medium substrate includes multiple, and multiple metallization VIAs are along the second medium
The edge of substrate is arranged in array, to form second resonant cavity；And/or
The metallization VIA in metallization in the third medium substrate includes multiple, and multiple metallization VIAs are along institute
The edge for stating third medium substrate is arranged in array, to form the third resonant cavity.
2. three rank substrate integral wave guide filter of stack according to claim 1, which is characterized in that among described first
First aperture being arranged on metal layer and first fluting, for obtaining first transmission zero in lower sideband；
Second aperture that is arranged on second intermediate metal layer and second fluting, for obtaining the in upper sideband
Two transmission zeros.
3. three rank substrate integral wave guide filter of stack according to claim 2, which is characterized in that first aperture
Size, first aperture deviate first intermediate metal layer center and it is described first fluting size be used for
Adjust the position of the first transmission zero.
4. three rank substrate integral wave guide filter of stack according to claim 2, which is characterized in that second aperture
Size, second aperture deviate second intermediate metal layer center distance and it is described second fluting ruler
The very little position for being used to adjust second transmission zero.
5. three rank substrate integral wave guide filter of stack according to claim 2, which is characterized in that first fluting
Size be used to adjust the size of the magnetic coupling coefficient；
The size of second aperture is used to adjust the size of the electric coupling coefficient.
6. three rank substrate integral wave guide filter of stack according to claim 1, which is characterized in that the input port
And the output port is the co-planar waveguide microstrip circuit that chemical attack goes out.
7. three rank substrate integral wave guide filter of stack according to claim 1, which is characterized in that the input port
It is centrosymmetric structure with the output port relative to the three rank substrate integral wave guide filter of stack.
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| WO2019053823A1 (en) * | 2017-09-13 | 2019-03-21 | 三菱電機株式会社 | Dielectric filter |
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| CN113097711B (en) * | 2021-03-31 | 2022-06-14 | 华南理工大学 | Substrate integrated waveguide filter antenna with high selective radiation efficiency |
| CN113314840A (en) * | 2021-05-26 | 2021-08-27 | 维沃移动通信有限公司 | Display device and electronic apparatus |
| CN113328223B (en) * | 2021-06-29 | 2022-08-30 | 展讯通信（上海）有限公司 | Third-order band-pass filter |
| CN113740353B (en) * | 2021-07-31 | 2022-10-14 | 西南大学 | Differential humidity sensor based on substrate integrated waveguide dual-entry resonant cavity |
| CN114665238B (en) * | 2022-03-02 | 2022-12-16 | 电子科技大学 | X-band SIW Archimedes spiral coupling filter and design method thereof |
| CN114824708B (en) * | 2022-04-27 | 2023-12-12 | 南京邮电大学 | Waveguide band-pass filter integrated by multilayer substrate |
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