CN114824708B - Waveguide band-pass filter integrated by multilayer substrate - Google Patents
Waveguide band-pass filter integrated by multilayer substrate Download PDFInfo
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- CN114824708B CN114824708B CN202210449615.7A CN202210449615A CN114824708B CN 114824708 B CN114824708 B CN 114824708B CN 202210449615 A CN202210449615 A CN 202210449615A CN 114824708 B CN114824708 B CN 114824708B
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- 239000000758 substrate Substances 0.000 title claims abstract description 183
- 239000002184 metal Substances 0.000 claims abstract description 128
- 230000008878 coupling Effects 0.000 claims abstract description 92
- 238000010168 coupling process Methods 0.000 claims abstract description 92
- 238000005859 coupling reaction Methods 0.000 claims abstract description 92
- 230000000694 effects Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 9
- 238000004891 communication Methods 0.000 description 5
- 230000001629 suppression Effects 0.000 description 5
- 238000003491 array Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/212—Frequency-selective devices, e.g. filters suppressing or attenuating harmonic frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
Abstract
The invention discloses a waveguide band-pass filter integrated by a multilayer substrate, which adopts a multilayer substrate stacking mode, wherein a resonant cavity is formed by adjacent metal substrates and a metallized through hole array between the adjacent metal substrates, the adjacent resonant cavities are connected through coupling gaps, so that the filter structure is more compact, the filter is more suitable for being applied to a modern microwave millimeter wave integrated circuit system, and the coupling gaps are arranged, so that a main mode can complete magnetic coupling, inhibit a higher order mode, and further achieve the effect of wide stop band.
Description
Technical Field
The invention relates to a waveguide band-pass filter integrated by a multilayer substrate, belonging to the field of filters.
Background
The substrate integrated waveguide technology has the characteristics of small volume, light weight, high quality factor, low insertion loss, high integration level, large power capacity and the like, so that the substrate integrated waveguide technology enables microwave devices to be developed more widely. Due to the crowding of the radio spectrum in today's wireless environments, the requirements for isolation between microwave components and systems are becoming higher and higher. In particular, the effectiveness and reliability of wireless communication systems will be degraded due to the presence of noise, interference, clutter and interference signals generated by other electronic devices. For example, in the electromagnetic spectrum, various radio signals and satellite communication frequency signals are distributed in the 3-50 GHz band, along with other communication services. The signal frequencies are mutually interwoven and even overlapped in a crossing way, which can seriously affect the signal receiving effect, reduce the communication signal quality and even make the communication system not work normally. On the other hand, many nonlinear active devices inside the rf front-end, such as mixers, multipliers, etc., also have various signals interleaved together, which severely affects transceiver performance.
In order to solve the above problems, there is a need for a filter having not only a good passband transmission characteristic but also a sufficiently wide stopband to suppress unwanted harmonic signals, thereby enabling a transceiver to receive high quality signals, and thus, there is an urgent need to study a waveguide bandpass filter of a wide stopband.
Disclosure of Invention
The invention provides a waveguide band-pass filter integrated by a multilayer substrate, which solves the problems disclosed in the background technology.
In order to solve the technical problems, the invention adopts the following technical scheme:
a waveguide band-pass filter integrated by a plurality of layers of substrates comprises a top metal substrate and a bottom metal substrate which are stacked, wherein a plurality of middle metal substrates are stacked between the top metal substrate and the bottom metal substrate, and a dielectric substrate is stacked between the adjacent metal substrates;
the dielectric substrate is penetrated with a metallized through hole array, and the metallized through hole array penetrated on the dielectric substrate, the upper layer metal substrate and the lower layer metal substrate jointly form a resonant cavity;
a plurality of coupling gaps for connecting the two adjacent resonant cavities are arranged on the metal substrate between the two adjacent resonant cavities, the coupling gaps are positioned at the weakest part of the magnetic field of the partial higher-order mode and are perpendicular to the magnetic field of the other partial higher-order mode, and the coupling gaps are parallel to the magnetic field of the main mode.
The top metal substrate is provided with an input port, and the bottom metal substrate is provided with an output port.
The input port is a microstrip line connected with the top layer resonant cavity, and the output port is a microstrip line connected with the bottom layer resonant cavity.
The input port and the output port are symmetrical along the center of the waveguide bandpass filter.
The metal substrate is provided with a plurality of groups of coupling slits, each group of coupling slits comprises two opposite coupling slits, and all the coupling slits are arranged in two rows and are symmetrical along the center of the resonant cavity.
In the two adjacent metal substrates, the coupling gap column of one upper metal substrate is parallel to two opposite sides of the resonant cavity, and the coupling gap column of the other metal substrate is parallel to the other two opposite sides of the resonant cavity.
The invention has the beneficial effects that: the invention adopts a mode of stacking a plurality of layers of substrates, the adjacent metal substrates and the metallized through hole arrays between the adjacent metal substrates form the resonant cavity, and the adjacent resonant cavities are connected through the coupling gaps, so that the filter structure is more compact, and the filter is more suitable for being applied to a modern microwave millimeter wave integrated circuit system.
Drawings
FIG. 1 is a three-dimensional block diagram of a third-order substrate integrated waveguide bandpass filter;
FIG. 2 is a top view of a third order substrate integrated waveguide bandpass filter;
FIG. 3 is an S-parameter diagram of the passband of the filter of FIG. 1;
FIG. 4 is an out-of-band S-parameter diagram of the filter of FIG. 1;
FIG. 5 is a three-dimensional block diagram of a fourth-order substrate integrated waveguide bandpass filter;
FIG. 6 is a top view of a fourth order substrate integrated waveguide bandpass filter;
FIG. 7 is an S-parameter diagram of the passband of the filter of FIG. 5;
FIG. 8 is an out-of-band S-parameter diagram of the filter of FIG. 5;
FIG. 9 is a three-dimensional block diagram of a five-order substrate integrated waveguide bandpass filter;
FIG. 10 is a top view of a fifth order substrate integrated waveguide bandpass filter;
FIG. 11 is an S-parameter diagram of the passband of the filter of FIG. 9;
fig. 12 is an out-of-band S-parameter diagram of the filter of fig. 9.
Detailed Description
The invention is further described below with reference to the accompanying drawings. The following examples are only for more clearly illustrating the technical aspects of the present invention, and are not intended to limit the scope of the present invention.
The utility model provides a waveguide band-pass filter of multilayer substrate integration, includes top layer metal substrate 3 and bottom metal substrate 4 that pile up, sets up input port 1 on the top layer metal substrate 3, sets up output port 2 on the bottom metal substrate 4, stacks up a plurality of intermediate metal substrates between top layer metal substrate 3 and the bottom metal substrate 4, stacks up the dielectric substrate between the adjacent metal substrate.
The input port 1 is a microstrip line connected with the top layer resonant cavity, the output port 2 is a microstrip line connected with the bottom layer resonant cavity, and the input port 1 and the output port 2 are symmetrical along the center of the waveguide band-pass filter.
The medium substrate is penetrated with a metallized through hole array 5, and the metallized through hole array 5, the upper layer metal substrate and the lower layer metal substrate penetrating through the medium substrate jointly form a resonant cavity.
A plurality of coupling gaps 6 for connecting the two adjacent resonant cavities are etched on the metal substrate between the two adjacent resonant cavities, the coupling gaps 6 are rectangular gaps, the coupling gaps 6 are divided into a plurality of groups, each group comprises two opposite coupling gaps 6, and all the coupling gaps 6 are arranged in two rows and are symmetrical along the center of the resonant cavities.
In the two adjacent metal substrates, the coupling gap 6 column of one upper metal substrate is parallel to two opposite sides of the resonant cavity, and the coupling gap 6 column of the other metal substrate is parallel to the other two opposite sides of the resonant cavity.
The position and orientation of the coupling slit 6 have the following requirements: the coupling gap 6 is located at the position where the magnetic field of part of the higher order modes is weakest and is perpendicular to the magnetic field of the other part of the higher order modes, and the coupling gap 6 is parallel to the magnetic field of the main mode.
The coupling gap 6 is used for the main mode magnetic coupling, and the electric coupling between modes can be neglected, so that only the suppression of the magnetic coupling of the higher order modes is considered.
The coupling gap 6 perpendicular to the magnetic field of part of the higher order mode translates along the magnetic field direction of the higher order mode, the mode suppression is hardly affected, and when translating to the area where the magnetic field of the other part of the higher order mode is weakest, the out-of-band suppression effect can be optimized.
Since the weakest magnetic field is a region, extending the length of the coupling slot 6 in a suitable region, or translating the coupling slot 6, the suppression of modes has little effect, which is advantageous for optimizing or increasing the coupling of the main modes.
For each pair of orthogonally distributed higher order modes, by arranging the coupling slot 6 where the magnetic field of one of the modes is weakest, the coupling slot 6 is exactly perpendicular to the magnetic field of the other higher order mode, and thus such an arrangement can suppress multiple higher order modes simultaneously. The coupling slots 6 are also parallel to the magnetic field of the main mode, so that the main mode can complete magnetic coupling, and the effect of wide stop band can be achieved while the main mode is coupled.
The dielectric substrates were all Rogers 5880 dielectric plates with a dielectric constant of 2.2 and a thickness of 0.508mm.
The waveguide band-pass filter adopts a mode of stacking a plurality of layers of substrates, the adjacent metal substrates and the metallized through hole arrays 5 between the adjacent metal substrates form resonant cavities, the adjacent resonant cavities are connected through the coupling gaps 6, so that the filter structure is more compact, the waveguide band-pass filter is more suitable for being applied to a modern microwave millimeter wave integrated circuit system, and the coupling gaps 6 of the waveguide band-pass filter are arranged, so that a main mode can complete magnetic coupling, a higher order mode is restrained, and the effect of wide stop band is achieved.
In order to embody the effect of the multi-layer substrate integrated waveguide band-pass filter, three-order, four-order and five-order substrate integrated waveguide band-pass filters are constructed, and the center frequency of the filters is 5.8GHz.
Fig. 1 shows a third-order substrate integrated waveguide band-pass filter, which comprises a top metal substrate 3, a first dielectric substrate 7, a middle first metal substrate 8, a second dielectric substrate 9, a middle second metal substrate 10, a third dielectric substrate 11 and a bottom metal substrate 4 which are stacked in sequence. All vias in all metallized via arrays 5 of the filter are uniform in size.
The top metal substrate 3, the middle first metal substrate 8 and the metallized through hole array 5 between the two form a first resonant cavity, the middle first metal substrate 8, the middle second metal substrate 10 and the metallized through hole array 5 between the two form a second resonant cavity, and the middle second metal substrate 10, the bottom metal substrate 4 and the metallized through hole array 5 between the two form a third resonant cavity.
As shown in fig. 1 and 2, a group of coupling slits 6 are etched on the intermediate first metal substrate 8, and the coupling slits 6 on the intermediate first metal substrate 8 are 7.9mm from the center of the cavity, symmetrical about the cavity center, since the coupling slits 6 are perpendicular to TE m0n (n is an evenNumber) of modes, these higher order modes can be suppressed. The middle second metal substrate 10 is etched with two groups of coupling slits 6, the coupling slit 6 column of the middle second metal substrate 10 is vertical to the coupling slit 6 column of the middle first metal substrate 8, the coupling slit 6 on the middle second metal substrate 10 is 8.1mm away from the center of the resonant cavity, and is symmetrical about the center of the resonant cavity, since the coupling slit is vertical to TE 30n The magnetic field of the mode being located at TE m03 The magnetic field of the modes is weakest, so these higher order modes can also be suppressed; in addition, due to the adoption of the center feed TE m0n The (m is even) mode will not be excited.
The top metal substrate 3 and the bottom metal substrate 4 are respectively provided with an input port 1 and an output port 2, the input port 1 and the output port 2 are microstrip lines with the same size, and the two ports are symmetrical about the center of the filter.
Fig. 3 is a passband S parameter curve of the third order substrate integrated waveguide bandpass filter, and it is obvious that the coupling of the main mode is very good, and the in-band return loss S11 is below-20 dB.
FIG. 4 is an out-of-band S-parameter curve of a third order substrate integrated waveguide bandpass filter, with a stop band rejection of 30dB extending to 4.64f 0 。
Fig. 5 shows a fourth-order substrate integrated waveguide bandpass filter, which comprises a top metal substrate 3, a first dielectric substrate 7, an intermediate first metal substrate 8, a second dielectric substrate 9, an intermediate second metal substrate 10, a third dielectric substrate 11, an intermediate third metal substrate 12, a fourth dielectric substrate 13 and a bottom metal substrate 4 which are stacked in sequence.
The top metal substrate 3, the middle first metal substrate 8 and the metallized through hole array 5 between the two form a first resonant cavity, the middle first metal substrate 8, the middle second metal substrate 10 and the metallized through hole array 5 between the two form a second resonant cavity, the middle second metal substrate 10, the middle third metal substrate 12 and the metallized through hole array 5 between the two form a third resonant cavity, and the middle third metal substrate 12, the bottom metal substrate 4 and the metallized through hole array 5 between the two form a third resonant cavity.
As shown in fig. 5 and 6, the intermediate first metal substrate 8 is etched with a set of coupling slits 6, and the set of coupling slits 6 on the intermediate first metal substrate 8 are 7.9mm from the center of the cavity and symmetrical about the cavity center, since the coupling slits are perpendicular to TE m0n (n is an even number) mode magnetic field, so these higher order modes can be suppressed. Four groups of coupling slits 6 are etched on the middle second metal substrate 10, the coupling slit 6 columns of the middle second metal substrate 10 are perpendicular to the coupling slit 6 columns on the middle first metal substrate 8, the coupling slit 6 on the middle second metal substrate 10 is 9.6mm away from the center of the resonant cavity, and is symmetrical about the center of the resonant cavity, since the coupling slits are perpendicular to TE 50n Is also located at TE m05 The weakest magnetic field of the modes, and therefore, these higher order modes can all be suppressed. The intermediate third metal substrate 12 is etched with two sets of coupling slits 6, the coupling slit 6 column of the intermediate third metal substrate 12 is perpendicular to the coupling slit 6 column of the intermediate second metal substrate 10 and parallel to the coupling slit 6 column of the intermediate first metal substrate 8, the coupling slit 6 of the intermediate third metal substrate 12 is 8.1mm from the centre of the cavity and symmetrical about the centre of the cavity, since the coupling slit is perpendicular to the TE m03 The magnetic field of the mode being located at TE 30n The magnetic field of the modes is weakest, so these higher order modes can also be suppressed; in addition, due to the adoption of the center feed TE m0n The (m is even) mode will not be excited.
The top metal substrate 3 and the bottom metal substrate 4 are respectively provided with an input port 1 and an output port 2, the input port 1 and the output port 2 are microstrip lines with the same size, and the two ports are symmetrical about the center of the filter.
FIG. 7 is a passband S-parameter curve for a four-stage substrate-integrated waveguide bandpass filter, and FIG. 8 is an out-of-band S-parameter curve for a four-stage substrate-integrated waveguide bandpass filter, which can suppress a stopband of-30 dB from 4.64 with only one stage added f 0 Extend to 7.05 f 0 。
Fig. 9 shows a fifth-order substrate integrated waveguide bandpass filter, which comprises a top metal substrate 3, a first dielectric substrate 7, an intermediate first metal substrate 8, a second dielectric substrate 9, an intermediate second metal substrate 10, a third dielectric substrate 11, an intermediate third metal substrate 12, a fourth dielectric substrate 13, an intermediate fourth metal substrate 14, a fifth dielectric substrate 15, and a bottom metal substrate 4, which are stacked in order.
The top metal substrate 3, the middle first metal substrate 8 and the metallized through hole array 5 between them form a first resonant cavity, the middle first metal substrate 8, the middle second metal substrate 10 and the metallized through hole array 5 between them form a second resonant cavity, the middle second metal substrate 10, the middle third metal substrate 12 and the metallized through hole array 5 between them form a third resonant cavity, the middle third metal substrate 12, the middle fourth metal substrate 14 and the metallized through hole array 5 between them form a third resonant cavity, and the middle fourth metal substrate 14, the bottom metal substrate 4 and the metallized through hole array 5 between them form a fourth resonant cavity.
As shown in fig. 9 and 10, the intermediate first metal substrate 8 is etched with a set of coupling slits 6, and the set of coupling slits 6 on the intermediate first metal substrate 8 are 7.7mm from the center of the cavity and symmetrical about the cavity center, since the coupling slits are perpendicular to TE m0n (n is an even number) mode magnetic field, so these higher order modes can be suppressed. Six groups of coupling slits 6 are etched on the middle second metal substrate 10, the coupling slit 6 columns of the middle second metal substrate 10 are vertical to the coupling slit 6 columns on the middle first metal substrate 8, the coupling slit 6 on the middle second metal substrate 10 is 10.4mm away from the center of the resonant cavity, and is symmetrical about the center of the resonant cavity, since the coupling slits are vertical to TE 70n Is also located at TE m07 The modes are at their weakest magnetic field, so these higher order modes can also be suppressed. Four sets of coupling slits 6 are etched in the intermediate third metal substrate 12, the coupling slit 6 columns of the intermediate third metal substrate 12 are perpendicular to the coupling slit 6 columns of the intermediate second metal substrate 10 and parallel to the coupling slit 6 columns of the intermediate first metal substrate 8, the coupling slit 6 of the intermediate third metal substrate 12 is 9.5mm from the centre of the resonator and symmetrical about the centre of the resonator, since the coupling slits are perpendicular to the TE m05 Is also located at TE 50n The modes are at their weakest magnetic field, so these higher order modes can also be suppressed. Intermediate firstThe four metal substrates 14 are etched with two sets of coupling slits 6, the coupling slit 6 column of the middle fourth metal substrate 14 is perpendicular to the coupling slit 6 column of the middle third metal substrate 12 and parallel to the coupling slit 6 column of the middle second metal substrate 10, the coupling slit 6 of the middle fourth metal substrate 14 is 8.1mm from the center of the resonant cavity and symmetrical about the resonant cavity center, since the coupling slit is perpendicular to the TE 30n Is also located at TE m03 The modes are at their weakest magnetic field, so these higher order modes can also be suppressed. In addition, due to the adoption of the center feed TE m0n The (m is even) mode will not be excited.
The top metal substrate 3 and the bottom metal substrate 4 are respectively provided with an input port 1 and an output port 2, the input port 1 and the output port 2 are microstrip lines with the same size, and the two ports are symmetrical about the center of the filter.
Fig. 11 is a passband S parameter curve of the fifth order substrate integrated waveguide bandpass filter, and fig. 12 is an out-of-band S parameter curve of the fifth order substrate integrated waveguide bandpass filter, where it can be seen that the fifth order is better suppressed out-of-band, and the stopband width is further extended.
The waveguide band-pass filter adopts a multi-layer structure, has smaller size and compact structure compared with the traditional single-layer structure, and is more suitable for being applied to a modern microwave millimeter wave integrated circuit system; meanwhile, the coupling level of the filter can be flexibly adjusted according to the requirement by adopting a vertical stacked magnetic coupling mode, and the ultra-wide stop band which is not available in other substrate integrated waveguide filters in the past can be further provided on the premise of ensuring the unchanged performance of the substrate integrated waveguide, and meanwhile, the excellent out-of-band suppression level can be also maintained.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and variations could be made by those skilled in the art without departing from the technical principles of the present invention, and such modifications and variations should also be regarded as being within the scope of the invention.
Claims (4)
1. The waveguide bandpass filter integrated by the multilayer substrate is characterized by comprising a top metal substrate and a bottom metal substrate which are stacked, wherein a plurality of middle metal substrates are stacked between the top metal substrate and the bottom metal substrate, and dielectric substrates are stacked between the adjacent metal substrates;
the dielectric substrate is penetrated with a metallized through hole array, and the metallized through hole array penetrated on the dielectric substrate, the upper layer metal substrate and the lower layer metal substrate jointly form a resonant cavity;
a plurality of coupling gaps which are connected with the two adjacent resonant cavities are arranged on the metal substrate between the two adjacent resonant cavities, the coupling gaps are positioned at the weakest part of the magnetic field of the partial higher-order mode and are perpendicular to the magnetic field of the other partial higher-order mode, and the coupling gaps are parallel to the magnetic field of the main mode;
the metal substrate is provided with a plurality of groups of coupling slits, each group of coupling slits comprises two opposite coupling slits, and all the coupling slits are arranged in two rows and are symmetrical along the center of the resonant cavity;
in the two adjacent metal substrates, the coupling gap column of one upper metal substrate is parallel to two opposite sides of the resonant cavity, and the coupling gap column of the other metal substrate is parallel to the other two opposite sides of the resonant cavity.
2. The waveguide bandpass filter integrated with a multilayer substrate according to claim 1 wherein the top metal substrate has an input port and the bottom metal substrate has an output port.
3. The waveguide bandpass filter integrated with a multilayer substrate according to claim 2 wherein the input port is a microstrip line connected to the top-layer cavity and the output port is a microstrip line connected to the bottom-layer cavity.
4. A multilayer substrate integrated waveguide bandpass filter according to claim 2 or 3 wherein the input port and the output port are symmetrical along the centre of the waveguide bandpass filter.
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