CN112952322B - Dual-mode band-pass filter based on folded substrate integrated waveguide resonant cavity - Google Patents
Dual-mode band-pass filter based on folded substrate integrated waveguide resonant cavity Download PDFInfo
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- CN112952322B CN112952322B CN202110124726.6A CN202110124726A CN112952322B CN 112952322 B CN112952322 B CN 112952322B CN 202110124726 A CN202110124726 A CN 202110124726A CN 112952322 B CN112952322 B CN 112952322B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
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Abstract
The invention discloses a dual-mode band-pass filter based on a folded substrate integrated waveguide resonant cavity, which comprises a top metal layer, a top dielectric substrate, a middle metal layer, a bottom dielectric substrate and a bottom metal layer. Four rows of metalized through holes and an independent metalized through hole are formed in the top layer medium substrate and the bottom layer medium substrate; two L-shaped grooves with one big and one small are etched on the middle metal layer; the four rows of metallized through holes, the three metal layers, the two dielectric substrates and the first L-shaped groove of the middle metal layer form a double-folded quarter-mode folded substrate integrated waveguide resonant cavity. The independent metallized through hole in the middle of the folded substrate integrated waveguide resonant cavity and the second L-shaped groove can be used for inhibiting the parasitic mode TE202And (5) molding. The filter has compact structure, simple feed, good selectivity and out-of-band suppression, and reduced processing difficulty, reduces area and radiation loss compared with the traditional substrate integrated waveguide dual-mode filter, and is more suitable for being applied to modern microwave/millimeter wave circuit integration.
Description
Technical Field
The invention relates to a dual-mode band-pass filter with mode suppression characteristic based on a folded substrate integrated waveguide resonant cavity, which can be used in the technical field of microwave/millimeter wave.
Background
As an important component of rf/microwave circuits, modern filters are developed toward low cost, light weight, miniaturization, high power capacity, and high performance. In the past decade, several high performance, low cost substrate integrated waveguide filters have been proposed. These substrate integrated waveguide filters combine various advantages of waveguides and planar circuit structures, including low loss, low cost, high performance and ease of planar integration.
A dual-mode substrate integrated waveguide filter is an important development in substrate integrated waveguide filter technology. The dual-mode substrate integrated waveguide filter can obviously reduce the number of resonant cavities and the size of the filter in the process of designing the filter, thereby increasing the flexibility of design and improving the performance of the filter. Different dual-mode substrate integrated waveguide structures are used for introducing transmission zero points into the stop band of the filter, and asymmetric or quasi-elliptic function response is obtained to improve the out-of-band rejection and selection characteristics of the filter.
On the basis of the dual-mode substrate integrated waveguide filter, a quarter-mode folded substrate integrated waveguide resonant cavity is obtained by folding twice the dual-mode substrate integrated waveguide resonant cavity along two symmetrical H surfaces by combining a folded substrate integrated waveguide technology. The dual-mode filter is designed by using the double-folded substrate integrated waveguide resonant cavity, the size of the dual-mode filter can be further reduced while the high performance is kept, and meanwhile, the closed structure is convenient for the integration of the final band-pass filter and other planar circuits.
In summary, how to take advantage of the dual-folded quarter-mode folded substrate integrated waveguide and the dual-mode filter and provide a miniaturized dual-layer folded substrate integrated waveguide filter device becomes a problem to be solved by those skilled in the art.
Disclosure of Invention
The purpose of the invention is as follows: in order to solve the technical problems mentioned in the background art, the invention provides a dual-mode band-pass filter with mode suppression characteristics based on a folded substrate integrated waveguide resonant cavity.
The technical scheme is as follows: the purpose of the invention is realized by the following technical scheme:
a dual-mode band-pass filter based on a folded substrate integrated waveguide resonant cavity comprises a top medium substrate, a bottom medium substrate and an intermediate metal layer arranged between the top medium substrate and the bottom medium substrate, wherein the top metal layer is arranged on the upper surface of the top medium substrate, and the bottom metal layer is arranged on the lower surface of the bottom medium substrate;
four rows of metalized through holes are formed in the top medium substrate and the bottom medium substrate, and are connected with the top metal layer, the top medium substrate, the middle metal layer, the bottom metal layer and the bottom medium substrate to form a metal electric wall; four rows of metallized through holes on the top medium substrate and the bottom medium substrate form a double-folded quarter-mode folded substrate integrated waveguide resonant cavity together with first L-shaped grooves etched on the top metal layer, the top medium substrate, the middle metal layer, the bottom medium substrate and the middle metal layer;
an independent metalized through hole is arranged in the middle of the resonant cavity and is connected with the top metal layer, the top dielectric substrate, the middle metal layer, the bottom dielectric substrate and the bottom metal layer;
the middle metal layer is square, and a first L-shaped groove and a second L-shaped groove which is shorter than the first L-shaped groove are etched on two opposite corners of the middle metal layer;
two strip lines connected with the folded substrate integrated waveguide and two microstrip lines connected with the strip lines are arranged on the middle metal layer, and the two microstrip lines form two ports of the dual-mode band-pass filter.
Preferably, the top dielectric substrate and the bottom dielectric substrate are stacked and attached to each other.
Preferably, four rows of metallized through holes are orthogonally arranged to form a square metal wall.
Preferably, the independent metallized through hole inside the folded substrate integrated waveguide resonator is offset from the center of the cavity towards the first L-shaped groove.
Preferably, the edges of the first L-shaped groove and the second L-shaped groove form the inner side of the metalized through hole of the metal wall, and the two L-shaped grooves are opposite in direction, are respectively positioned at the diagonal corners of the middle layer metal layer, and are symmetrical with respect to the diagonal.
Preferably, the two groups of microstrip line-strip line transition structures are perpendicular to each other and located in the centers of the two electric walls of the folded substrate integrated waveguide resonant cavity.
Preferably, the top dielectric substrate and the bottom dielectric substrate are the same in material and thickness.
Has the advantages that: compared with the prior art, the invention adopting the technical scheme has the following technical effects: the invention has simple design structure, compact filter structure, good filter selection characteristic and out-of-band rejection and low insertion loss. Compared with the traditional substrate integrated waveguide filter, the double-layer structure has the advantage of reduced area, and is more suitable for being applied to the integration of modern microwave and millimeter wave circuits. Meanwhile, the size of the filter can be further reduced by adopting the dual-mode folded substrate integrated waveguide resonant cavity. The second L-shaped groove and the independent metalized through hole are loaded, so that the upper stop band of the dual-mode filter can be effectively inhibited due to TE202The spurious passband generated by the mode improves the out-of-band rejection of the filter, and the bandwidth of the dual-mode band-pass filter can be flexibly adjusted by adjusting the size of the second L-shaped groove, and simultaneously, the L-shaped grooves are etchedOn the metal layer of the middle layer, the integral filter is of a closed structure, so that the radiation loss caused by pattern etching on the upper metal layer or the floor of the traditional substrate integrated waveguide resonant cavity is reduced, the processing difficulty and cost are reduced, and the integration with other planar circuits is facilitated.
Drawings
Fig. 1 is a schematic three-dimensional structure diagram of a dual-mode bandpass filter according to an embodiment of the present invention.
Figure 2 is a three-dimensional, fragmentary view of a dual-mode bandpass filter of an embodiment of the invention.
Fig. 3 is a schematic top-view structure diagram of a dual-mode bandpass filter according to an embodiment of the invention.
Figure 4 is a graph of simulation results of the magnitude of the S-parameter of a comparative example (second L-shaped groove not etched and separate metallized via provided) of a dual-mode bandpass filter of an embodiment of the invention.
Figure 5 is a graph of simulation results of the magnitude of the S-parameter of a dual-mode bandpass filter of an embodiment of the invention.
The structure comprises a substrate, a top layer metal layer, a top layer dielectric substrate, a middle layer metal layer, a bottom layer dielectric substrate, a bottom layer metal layer, a bottom layer dielectric substrate, a top layer metal layer, a top layer dielectric substrate, a bottom layer metal layer, a top layer dielectric substrate, a bottom layer metal layer, a bottom layer, a bottom layer, a bottom.
Detailed Description
Objects, advantages and features of the present invention will be illustrated and explained by the following non-limiting description of preferred embodiments. The embodiments are merely exemplary for applying the technical solutions of the present invention, and any technical solution formed by replacing or converting the equivalent thereof falls within the scope of the present invention claimed.
The embodiment of the invention discloses a dual-mode band-pass filter with a mode suppression characteristic based on a folded substrate integrated waveguide resonant cavity, and as shown in a figure 1, a figure 2 and a figure 3, the dual-mode band-pass filter comprises a top medium substrate 2, a bottom medium substrate 4 and a middle metal layer 3 arranged between the top medium substrate and the bottom medium substrate, wherein the top medium substrate 2 and the bottom medium substrate 4 are arranged in an overlapped mode and are mutually attached, the top metal layer 1 is arranged on the upper surface of the top medium substrate 2, and the bottom metal layer 5 is arranged on the lower surface of the bottom medium substrate 4. Four rows of metalized through holes 6 with the same size and period are arranged on the top medium substrate 2 and the bottom medium substrate 4, and the four rows of metalized through holes are connected with the top metal layer 1, the top medium substrate 2, the middle metal layer 3, the bottom metal layer 5 and the bottom medium substrate 4 to form a square metal electric wall. The middle metal layer is square, and a first L-shaped groove 10 and a second L-shaped groove 8 are etched on two opposite corners of the middle metal layer, wherein the length of the first L-shaped groove 10 is larger than that of the second L-shaped groove 8. The two L-shaped grooves are arranged along the inner side of the metal wall, have opposite directions and are symmetrical about the diagonal line of the middle metal layer. Four rows of metallized through holes on the top medium substrate 2 and the bottom medium substrate 4 form a whole double-folded quarter-mode folded substrate integrated waveguide resonant cavity together with the first L-shaped groove 10 on the top metal layer 1, the top medium substrate 2, the middle metal layer 3, the bottom metal layer 5, the bottom medium substrate 4 and the middle metal layer 3;
an independent metalized through hole 7 is arranged in the middle of the resonant cavity, and the metalized through hole 7 is connected with the top metal layer 1, the top dielectric substrate 2, the middle metal layer 3, the bottom dielectric substrate 4 and the bottom metal layer 5.
Two strip lines 11 connected with the folded substrate integrated waveguide resonant cavity and two microstrip lines 9 connected with the strip lines are arranged on the middle layer metal layer 3, the two microstrip lines are perpendicular to each other and are symmetrical about a diagonal line of the square cavity, and two ports of the dual-mode band-pass filter are formed.
The folded integrated waveguide dual-mode filter is a double-layer circuit, and a transition circuit from a microstrip line to a strip line is connected into a folded substrate integrated waveguide resonant cavity to realize impedance matching.
In the embodiment of the invention, the double-folded substrate integrated waveguide resonant cavity is realized by designing a series of metallized through holes on two layers of printed circuit boards. The independent metallized through holes arranged on the top dielectric substrate and the bottom dielectric substrate are used for inhibiting the parasitic mode of the stop band on the dual-mode filter, and the out-of-band inhibition characteristic of the dual-mode folded substrate integrated waveguide filter is improved. And a second L-shaped groove etched on the middle layer metal layer is used for adjusting the coupling of the two modes of the dual-mode band-pass filter so as to adjust the bandwidth of the final dual-mode band-pass filter.
In a specific design example, the top dielectric substrate and the bottom dielectric substrate are both Rogers 5880 dielectric plates, wherein the dielectric constants of the top dielectric substrate and the bottom dielectric substrate are both 2.2, and the thicknesses of the top dielectric substrate and the bottom dielectric substrate are both 0.508 mm. Two microstrip line-to-strip line transition structures connected with the folded substrate integrated waveguide resonant cavity are arranged on the middle metal layer to form two input and output ports of the double-layer folded substrate integrated waveguide dual-mode filter, and the impedance of the two microstrip lines is 50 ohms. The two L-shaped grooves are symmetrical about the diagonal line of the cavity, the distance between the outermost side of each L-shaped groove and the circle centers of the metalized through holes on the two sides is 1mm, and the length of a right-angle side of each L-shaped groove is 16mm and 2.5mm respectively. The independent metalized through hole is positioned at an electric field zero point in the folded substrate integrated resonant cavity, and the distance of the independent metalized through hole deviating from two symmetrical axes of the square cavity is 1.78 mm. The invention has simple design structure, compact size, good filter selection characteristic and out-of-band rejection, reduces the processing difficulty and the processing cost and reduces the area.
Fig. 4 is a graph of simulation results of the magnitude of the S-parameter without parasitic mode suppression without providing the separate metalized via 7 and the second L-shaped groove. FIG. 5 is a simulation result of the S parameter amplitude in the present invention, and it can be known from FIG. 5 that the 3-dB operating bandwidth of the dual-mode filter of the present invention is 9.18GHz-9.58GHz, the center frequency is 9.38GHz, the relative bandwidth is 4.3%, and the return loss of the input port and the output port is both greater than 25 dB. The two transmission zeros of 7GHz and 9.68GHz on two sides of the pass band respectively improve the selection characteristic of the dual-mode filter. Comparing fig. 4 and fig. 5, it can be seen that the spurious modes in the stop band on the filter can be suppressed, thereby improving the out-of-band rejection characteristics of the dual-mode filter.
The invention can realize the selection of the input signal power smoothly on a narrower frequency band, and compared with a dual-mode band-pass filter under a substrate integrated waveguide circuit of the same technology, the invention improves the circuit performance while reducing the size of a filter circuit, and has simple manufacturing process and low cost.
Claims (7)
1. A dual-mode band-pass filter based on a folded substrate integrated waveguide resonant cavity is characterized in that: the metal-clad laminate comprises a top medium substrate, a bottom medium substrate and a middle metal layer arranged between the top medium substrate and the bottom medium substrate, wherein the top metal layer is arranged on the upper surface of the top medium substrate, and the bottom metal layer is arranged on the lower surface of the bottom medium substrate;
four rows of metalized through holes are formed in the top medium substrate and the bottom medium substrate, and are connected with the top metal layer, the top medium substrate, the middle metal layer, the bottom metal layer and the bottom medium substrate to form a metal electric wall; four rows of metallized through holes on the top medium substrate and the bottom medium substrate form a double-folded quarter-mode folded substrate integrated waveguide resonant cavity together with first L-shaped grooves etched on the top metal layer, the top medium substrate, the middle metal layer, the bottom medium substrate and the middle metal layer;
an independent metalized through hole is arranged in the middle of the resonant cavity and is connected with the top metal layer, the top dielectric substrate, the middle metal layer, the bottom dielectric substrate and the bottom metal layer;
the middle metal layer is square, and a first L-shaped groove and a second L-shaped groove which is shorter than the first L-shaped groove are etched on two opposite corners of the middle metal layer;
two strip lines connected with the folded substrate integrated waveguide and two microstrip lines connected with the strip lines are arranged on the middle metal layer, and the two microstrip lines form two ports of the dual-mode band-pass filter.
2. The dual-mode band-pass filter based on the folded substrate integrated waveguide resonator of claim 1, wherein: the top dielectric substrate, the middle metal layer and the bottom dielectric substrate are stacked and attached to each other.
3. The dual-mode band-pass filter based on the folded substrate integrated waveguide resonator of claim 1, wherein: four rows of metallized through holes are orthogonally arranged to form a square metal wall.
4. The dual-mode band-pass filter based on the folded substrate integrated waveguide resonator of claim 1, wherein: and the independent metallized through hole in the folded substrate integrated waveguide resonant cavity deviates from the center of the cavity towards the direction of the first L-shaped groove.
5. The dual-mode band-pass filter based on the folded substrate integrated waveguide resonator of claim 1, wherein: the edges of the first L-shaped groove and the second L-shaped groove form the inner side of a metalized through hole of the metal wall, and the two L-shaped grooves are opposite in direction, are respectively positioned at the diagonal of the middle layer metal layer and are symmetrical about the diagonal.
6. The dual-mode band-pass filter based on the folded substrate integrated waveguide resonator of claim 1, wherein: the two groups of microstrip line-strip line transition structures are vertical to each other and are positioned in the centers of the two electric walls of the folded substrate integrated waveguide resonant cavity.
7. The dual-mode band-pass filter based on the folded substrate integrated waveguide resonator of claim 1, wherein: the top dielectric substrate and the bottom dielectric substrate are the same in material and thickness.
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| CN202110124726.6A CN112952322B (en) | 2021-01-29 | 2021-01-29 | Dual-mode band-pass filter based on folded substrate integrated waveguide resonant cavity |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113611993B (en) * | 2021-07-21 | 2022-03-29 | 杭州电子科技大学 | High-selectivity wide-stop-band folded substrate integrated waveguide dual-mode filter |
| CN114784473B (en) * | 2022-03-16 | 2024-06-21 | 上海交通大学 | Double-folded substrate integrated waveguide filter balun based on silicon-based photosensitive film |
| CN114883766B (en) * | 2022-04-15 | 2024-02-02 | 大连海事大学 | Dual-mode substrate integrated waveguide filter based on slow wave structure |
| CN114824708B (en) * | 2022-04-27 | 2023-12-12 | 南京邮电大学 | Waveguide band-pass filter integrated by multilayer substrate |
| CN115149231B (en) * | 2022-08-15 | 2023-09-22 | 电子科技大学 | Substrate integrated suspension line-based miniaturized dual-mode band-stop filter |
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| CN102354790A (en) * | 2011-10-25 | 2012-02-15 | 电子科技大学 | Highly miniaturized substrate integrated waveguide resonator |
| CN103531871A (en) * | 2013-10-29 | 2014-01-22 | 南通大学 | Substrate integrated waveguide differential band-pass filter |
| CN108428984A (en) * | 2018-03-15 | 2018-08-21 | 南京邮电大学 | The bandpass filter of resonant cavity is integrated based on right angled triangle substrate |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102354790A (en) * | 2011-10-25 | 2012-02-15 | 电子科技大学 | Highly miniaturized substrate integrated waveguide resonator |
| CN103531871A (en) * | 2013-10-29 | 2014-01-22 | 南通大学 | Substrate integrated waveguide differential band-pass filter |
| CN108428984A (en) * | 2018-03-15 | 2018-08-21 | 南京邮电大学 | The bandpass filter of resonant cavity is integrated based on right angled triangle substrate |
Non-Patent Citations (1)
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