CN115473020B - Multilayer packaging three-passband SIW balanced band-pass filter - Google Patents
Multilayer packaging three-passband SIW balanced band-pass filter Download PDFInfo
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- CN115473020B CN115473020B CN202211303670.1A CN202211303670A CN115473020B CN 115473020 B CN115473020 B CN 115473020B CN 202211303670 A CN202211303670 A CN 202211303670A CN 115473020 B CN115473020 B CN 115473020B
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- 238000004806 packaging method and process Methods 0.000 title abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 139
- 239000000758 substrate Substances 0.000 claims abstract description 127
- 238000010168 coupling process Methods 0.000 claims abstract description 53
- 238000005859 coupling reaction Methods 0.000 claims abstract description 53
- 230000008878 coupling Effects 0.000 claims abstract description 52
- 230000005540 biological transmission Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 3
- 238000004891 communication Methods 0.000 abstract description 11
- 238000001914 filtration Methods 0.000 abstract description 7
- 230000007613 environmental effect Effects 0.000 abstract description 5
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- 230000005684 electric field Effects 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The application discloses a multilayer packaging three-passband SIW balanced bandpass filter, which comprises a first metal layer, a first dielectric substrate, a second metal layer, a second dielectric substrate, a third metal layer, a third dielectric substrate and a fourth metal layer, wherein the first metal layer is provided with a differential input port and an output port; the first dielectric substrate is arranged on the lower surface of the first metal layer; the second metal layer is arranged on the lower surface of the first dielectric substrate; the second dielectric substrate is arranged on the lower surface of the second metal layer; the third metal layer is arranged on the lower surface of the second dielectric substrate; the third dielectric substrate is arranged on the lower surface of the third metal layer; the fourth metal layer is arranged on the lower surface of the third dielectric substrate. By arranging the differential input port and the differential output port, a balance circuit is obtained, and electromagnetic interference and environmental noise in a communication system can be reduced; meanwhile, the size of the filter can be further reduced by utilizing the multi-layer structure, and in addition, the structure successfully constructs a split-column type coupling topology, so that the three-passband filtering effect is realized.
Description
Technical Field
The application relates to the field of microwave passive devices, in particular to a multilayer packaging three-passband SIW balanced bandpass filter.
Background
With the rapid development of modern wireless communication systems, a Substrate Integrated Waveguide (SIW) filter circuit is widely focused, and has many advantages of low loss, low cost, high power capacity, high quality factor and the like. Meanwhile, the SIW-based balance filter circuit can effectively inhibit noise and resist electromagnetic interference. The multi-passband balanced bandpass filter designed by using the multi-layer packaging SIW can lead the designed filter to have more compact size and be more suitable for the working requirements of multi-frequency bands, multi-standards and multi-applications of the current wireless communication system.
Disclosure of Invention
The application aims to design a novel radio frequency device integrating a balance function and a three-passband filtering function, wherein the device comprises a dielectric substrate, a metal surface, a metal through hole, a perturbation metal through hole, an energy coupling hole and the like. Therefore, the application designs the multi-layer packaging three-passband SIW balanced band-pass filter, which is based on the multi-mode resonant cavity, the split coupling topology and the multi-layer physical structure.
In order to achieve the above object, the technical scheme of the present invention is as follows: a multi-layer package three passband SIW balanced bandpass filter comprising: the first metal layer is provided with a differential input port and a differential output port for realizing energy transmission; the first dielectric substrate is arranged on the lower surface of the first metal layer; the second metal layer is arranged on the lower surface of the first dielectric substrate; the second dielectric substrate is arranged on the lower surface of the second metal layer; the third metal layer is arranged on the lower surface of the second dielectric substrate; the third dielectric substrate is arranged on the lower surface of the third metal layer; the fourth metal layer is arranged on the lower surface of the third dielectric substrate; the first metal layer, the first dielectric substrate, the second metal layer and the second dielectric substrate are stacked in a multi-layer mode and are arranged in the center.
According to the embodiment of the application, the multilayer packaging three-passband SIW balanced bandpass filter has at least the following beneficial effects: the differential input port and the differential output port are arranged on the first metal layer to obtain the balanced filtering function circuit, so that electromagnetic interference in a communication system can be reduced, environmental noise is suppressed, the filter is further miniaturized by utilizing multimode characteristics and a multilayer structure, and in addition, the formed split-type coupling topology can realize three-passband filter response.
According to some embodiments of the present application, the second metal layer is provided with two first energy coupling holes, and the first energy coupling holes are symmetrically arranged about an axis A1A2 and are both arranged on an axis B1B2, so as to realize the transmission of energy from the first dielectric substrate to the second dielectric substrate; and two second energy coupling holes are formed in the third metal layer, are symmetrically arranged about the axis A1A2 and are arranged on the axis B1B2, so that energy is transmitted from the second medium substrate to the third medium substrate. In addition, in order to achieve maximum coupling and transmission of energy, the first and second energy coupling holes are each rectangular in shape and located at the position where the resonant mode magnetic field is strongest to achieve magnetic coupling.
According to some embodiments of the application, the first energy coupling hole has a hole length of 3.9mm and a hole width of 0.8mm, and the second energy coupling hole has a hole length of 3.2mm and a hole width of 0.8mm; the energy coupling holes are for coupling two adjacent resonators. Through simulation optimization, such a size coupling effect is best for the present design.
According to some embodiments of the present application, the first dielectric substrate, the second dielectric substrate, and the third dielectric substrate are all provided with a plurality of metal through holes, and are respectively disposed around the first dielectric substrate, the second dielectric substrate, and the third dielectric substrate, and are arranged in a rectangular shape. The metal through holes are arranged in a rectangular shape, so that electromagnetic waves in the dielectric substrate can be limited from diffusing to the surrounding, namely, electromagnetic wave leakage is prevented.
According to some embodiments of the application, the first dielectric substrate is provided with four first perturbation metal through holes. Six second perturbation metal through holes are formed in the second dielectric substrate. Six third perturbation metal through holes are formed in the third medium substrate, and the perturbation metal through holes are all arranged on the axis A1A 2. The resonance frequency of the TE201 mode is different from that of the TE202 mode, and by arranging the perturbation metal through hole, the resonance frequency of the TE201 mode can be increased, and meanwhile, the resonance frequency of the TE202 mode can be kept unchanged.
According to some embodiments of the application, the first perturbation metal via is 0.6mm in diameter, and the second and third perturbation metal vias are each 1.2mm in diameter.
According to some embodiments of the application, the number of the differential input ports and the differential output ports is two, and the differential input ports and the differential output ports are both disposed on the same side of the first metal layer axis A1A2 and are symmetrical about the first metal layer axis B1B 2; the differential input port and the differential output port are symmetrical about an axis A1A2 of the first metal layer. This is the most suitable arrangement of differential input/output ports in order to achieve a balancing function in combination with the phase characteristics of the resonant modes.
According to some embodiments of the application, the differential input port is comprised of a differential input feed line for transmitting energy from the differential input port to the SIW resonator and a coplanar waveguide structure, and the differential output port is comprised of a differential output feed line for transmitting energy from the SIW resonator to the differential output port and a coplanar wave conversion structure. In addition, the coplanar waveguide structure is used for connecting the differential feeder and the SIW resonant cavity so as to obtain matching of the differential feeder and the SIW resonant cavity, the differential feeder has impedance of 50 ohms, the SIW resonant cavity also has certain impedance, and the impedance matching between the differential feeder and the SIW resonant cavity can be realized by using the coplanar waveguide structure to connect the differential feeder and the SIW resonant cavity.
According to some embodiments of the application, the differential input feed line and the differential output feed line are equal in width, and are each 1.55mm. This 1.55mm is a conventional arrangement. The port impedance of the measuring instrument is 50 ohms and in order to make the differential feeder impedance also 50 ohms, the feeder width needs to be set to 1.55mm.
According to some embodiments of the application, the materials of the first dielectric substrate, and the third dielectric substrate are Rogers 5880 substrates; wherein the relative dielectric constant of the substrate is 2.2, and the thickness of the substrate is 0.508mm.
Compared with the prior art, the invention has the following advantages: 1) According to the scheme, the differential input port and the differential output port are arranged to obtain the balance circuit, so that electromagnetic interference and environmental noise in a communication system can be reduced; meanwhile, the size of the filter can be further reduced by utilizing a multi-layer structure, and 2) the structure successfully constructs a split-row coupling topology, so that the three-passband filtering effect is realized, and the working requirements of multiple frequency bands, multiple standards and multiple applications of the current wireless communication system are met; 3) The scheme adopts a multilayer structure: the device size can be effectively reduced, and the miniaturization requirement of a wireless communication system is met; 4) Balance function implantation: the balance function can be realized by arranging the differential input port and the differential output port, so that electromagnetic interference and environmental noise in a communication system can be effectively reduced; 5) Multi-passband filtering performance: the modern wireless communication system has the working characteristics of multiple frequency bands, multiple standards and multiple applications, and the three-passband filtering effect realized by the method is more in line with the application scene of the modern wireless communication system.
Drawings
The application is further described with reference to the accompanying drawings and examples, in which:
fig. 1 is a schematic structural diagram of a multilayer-packaged three-passband SIW balanced bandpass filter according to an embodiment of the application;
FIG. 2 is a schematic structural diagram of the first metal layer and the first dielectric substrate in FIG. 1;
FIG. 3 is a schematic diagram of the structure of the second metal layer in FIG. 1;
FIG. 4 is a schematic diagram of a structure of the second dielectric substrate in FIG. 1;
FIG. 5 is a schematic diagram of the third metal layer in FIG. 1;
FIG. 6 is a schematic structural diagram of the third dielectric substrate in FIG. 1;
FIG. 7 is a schematic diagram of the structure of the fourth metal layer in FIG. 1;
fig. 8 is a graph of simulated S-parameters for this embodiment.
Reference numerals:
The first metal layer 100, the differential input ports 111 and 112, the first differential input feed 1111, the second differential input feed 1112, the differential output ports 113 and 114, the first differential output feed 1113, the second differential output feed 1114, the first dielectric substrate 200, the first metal via 201, the first perturbation metal via 202, the second metal layer 300, the first energy coupling hole 301, the second dielectric substrate 400, the second metal via 401, the second perturbation metal via 402, the third metal layer 500, the second energy coupling hole 501, the third dielectric substrate 600, the third metal via 601, the third perturbation metal via 602, the fourth metal layer 700, the coplanar waveguide structure 800.
Detailed Description
In order to enhance the understanding and appreciation for the invention, the invention will be further described with reference to the drawings and the detailed description.
Example 1: a multi-layer package three-passband SIW balanced bandpass filter according to an embodiment of the application is described below with reference to fig. 1.
As shown in fig. 1, the multilayer packaging three-passband SIW balanced bandpass filter according to the embodiment of the application includes a first metal layer 100, a first dielectric substrate 200, a second metal layer 300, a second dielectric substrate 400, a third metal layer 500, a third dielectric substrate 600, and a fourth metal layer 700.
The first metal layer 100 is provided with differential input ports 111 and 112, differential output ports 113 and 114, the differential input ports are used for realizing the function of receiving input signals, and the check output ports are used for realizing the function of transmitting output signals; the first dielectric substrate 200 is disposed on the lower surface of the first metal layer 100; the second metal layer 300 is disposed on the lower surface of the first dielectric substrate 200; the second dielectric substrate 400 is disposed on the lower surface of the second metal layer 300; the third metal layer 500 is disposed on the lower surface of the second dielectric substrate 400; the third dielectric substrate 600 is disposed on the lower surface of the third metal layer 500; the fourth metal layer 700 is disposed on the lower surface of the third dielectric substrate 600; the first metal layer 100, the first dielectric substrate 200, the second metal layer 300, the second dielectric substrate 400, the third metal layer 500, the third dielectric substrate 600, and the fourth metal layer 700 are stacked in a multi-layered form at the center.
According to the multilayer packaging three-passband SIW balanced bandpass filter of the embodiment of the application, the differential input ports 111 and 112 and the differential output ports 113 and 114 are arranged on the first metal layer 100 to obtain a balanced circuit, so that electromagnetic interference in a communication system is reduced, environmental noise is suppressed, and the filter is further miniaturized by utilizing multimode characteristics and a multilayer structure.
In some embodiments of the present application, as shown in fig. 1, the second metal layer 300 is provided with two first energy coupling holes 301. The two first energy coupling holes 301 are symmetrical about an axis A1A2, and furthermore, the two first energy coupling holes 301 are arranged on an axis B1B2, which enable the transfer of energy from the first dielectric substrate 200 to the second dielectric substrate 400; the third metal layer 500 is provided with two second energy coupling holes 501. The second energy coupling holes 501 are symmetrical about an axis A1A2, and furthermore, the two second energy coupling holes 501 are arranged on an axis B1B2, which enable the transfer of energy from the second dielectric substrate 400 to the third dielectric substrate 600. The first energy coupling hole 301 and the second energy coupling hole 501 are disposed at the position where the magnetic fields of the TE 201 mode and the TE 202 mode are strongest, so that magnetic coupling among the first dielectric substrate 200, the second dielectric substrate 400 and the third dielectric substrate 600 can be achieved, and signal transmission between the top layer and the bottom layer can be achieved. In addition, the number of the first energy coupling holes 301 and the second energy coupling holes 501 is two, so that the processing difficulty can be reduced while the good signal transmission function is realized.
In some embodiments of the present application, as shown in fig. 3 and 5, the first energy coupling hole 301 and the second energy coupling hole 501 comprise two rectangular energy coupling holes, the first energy coupling hole has a hole length of 3.9mm, the second energy coupling hole has a hole width of 0.8mm, and the second energy coupling hole has a hole length of 3.2mm and a hole width of 0.8mm. Further, the distance ls from the inner side of the first energy coupling hole 301 to the axis A1A2 is 3.05mm, and the distance ls from the inner side of the second energy coupling hole 501 to the axis A1A2 is 3.6mm.
In some embodiments of the present application, as shown in fig. 1,2, 4 and 6, the first dielectric substrate 200 is provided with a plurality of first metal through holes 201 and four first perturbation metal through holes 202, the plurality of first metal through holes 201 are all arranged around the first dielectric substrate 200 and are distributed in a rectangular shape, and the four perturbation metal through holes are arranged on the axis A1A2 and are distributed in two sides relative to the axis B1B 2; the second dielectric substrate 400 is provided with a plurality of second metal through holes 401 and six second perturbation metal through holes 402, the plurality of second metal through holes 401 are all arranged around the second dielectric substrate 400 and are distributed in a rectangular shape, and the six perturbation metal through holes are arranged on the axis A1A2 and are distributed respectively and three on two sides relative to the axis B1B 2; the third dielectric substrate 600 is provided with a plurality of third metal through holes 601 and six third perturbation metal through holes 602, the plurality of third metal through holes 601 are all arranged around the third dielectric substrate 600 and distributed in a rectangular shape, and the six perturbation metal through holes are arranged on the axis A1A2 and distributed respectively in three opposite sides of the axis B1B 2. By arranging the first metal through hole 201, the second metal through hole 401 and the third metal through hole 601, electromagnetic waves can be limited, rectangular substrate integrated waveguide resonant cavities can be formed among the first metal through hole 201, the second metal through hole 401 and the third metal through hole 601, the first dielectric substrate 200, the second dielectric substrate 400, the third dielectric substrate 600, the first metal layer 100 and the fourth metal layer 700, so that resonant modes are excited, and a filtering effect is achieved. Wherein the diameter d of the first metal through holes 201 is 0.6mm, the distance p between two adjacent first metal through holes 201 is 1mm, and the parameters of the second metal through holes 401 and the third metal through holes 601 are the same as those of the first metal through holes 201.
In some embodiments of the present application, as shown in fig. 1,2, 4 and 6, the first perturbation metal via 202 is 0.6mm in diameter, and the second perturbation metal via 402, the third perturbation metal via 602 is 1.2mm in diameter. The three-passband SIW balanced bandpass filter achieves the desired functions by exciting TE 201 and TE 202 modes in the cavities formed by the first dielectric substrate 200, the second dielectric substrate 400, and the third dielectric substrate 600. The four first perturbation metal vias 202 are located in the strong electric field region of the TE 201 mode, increasing the resonant frequency of the TE 201 mode. Meanwhile, the four first perturbation metal vias 202 are located in the weak electric field region of the TE 202 mode, the resonance frequency of the TE 202 mode is kept unchanged, and the resonance frequencies of the TE 201 and TE 202 modes are controlled to achieve band-pass response. The six second perturbation metal vias 402 and the six third perturbation metal vias 602 operate on the same principle as the first perturbation metal vias 202, but they achieve a bandstop response. The bandpass response and the bandstop response combine to form a split-coupling topology, implementing a three-passband filter response.
In some embodiments of the present application, as shown in fig. 1 and 2, differential input ports 111 and 112 are disposed on the same side of the first metal layer 100 axis A1 A2; differential output ports 113 and 114 are provided on the same side of the axis A1A2 of the first metal layer 100; wherein the differential input ports 111 and 112 and the differential output ports 113 and 114 are symmetrical about the axis A1A2 of the first metal layer 100.
In some embodiments of the present application, as shown in fig. 1 and 2, the differential input ports 111 and 112 include differential input feed lines 1111 and 1112 and a coplanar waveguide structure 800, the differential output ports 113 and 114 include differential output feed lines 1113 and 1114 and the coplanar waveguide structure 800, the differential input ports 111 and 112 are configured to receive signals, the differential input feed lines 1111 and 1112 are configured to transmit energy from the differential input ports 111 and 112 to the first dielectric substrate 200, the differential output ports 113 and 114 are configured to transmit the signals out, and the differential output feed lines 1113 and 1114 are configured to transmit energy from the first dielectric substrate 200 to the differential output ports 113 and 114. In addition, the coplanar waveguide structure 800 is used to connect the differential feed lines 1111, 1112, 1113, 1114 and the SIW resonant cavity formed by combining the first metal layer 100, the first dielectric substrate 200, the second metal layer 300, and the first metal via 201, so as to obtain matching between the two.
When the differential input ports 111 and 112 are loaded with differential signals, the differential signals in the first dielectric substrate 200 excite the modes TE 201 and TE 202 and output from the differential output ports 113 and 114 to form a wide passband, meanwhile, the differential signals are transmitted to the second dielectric substrate 400 through the first energy coupling hole 301 and excite the modes TE 201 and TE 202, the second dielectric substrate 400 is regarded as a bandstop resonant cavity, the matched use of the first dielectric substrate 200 and the second dielectric substrate 400 can split the formed wide passband into two narrow passbands, then the differential signals are transmitted to the third dielectric substrate 600 through the second energy coupling hole 501 and excite the modes TE 201 and TE 202, the matched use of the third dielectric substrate 600 is regarded as a bandstop resonant cavity, and the matched use of the first dielectric substrate 200, the second dielectric substrate 400 and the third dielectric substrate 600 can split the wide passband into three narrow passbands, so that the design can finally realize three passband.
In some embodiments of the present application, as shown in fig. 2, the differential input feed lines 1111, 1112 are equal in width to the differential output feed lines 1113, 1114, and are each 1.55mm.
In some embodiments of the present application, the materials of the first dielectric substrate 200, the second dielectric substrate 400, and the third dielectric substrate 600 are Rogers 5880; wherein the relative dielectric constant of the substrate is 2.2, the thickness of the substrate is 0.508mm, and the loss tangent of the substrate is 0.0009.
In some embodiments of the present application, as shown in fig. 8, the operating frequency of the multi-layer package SIW three-passband balanced bandpass filter in the transmission channel (differential input feed 1111 and 1112 combined excited equal-amplitude inverted input signal, differential output feed 1113 and 1114 combined excited equal-amplitude inverted output signal) is 13.3GHz, 13.7GHz, 14.2GHz; the 3-dB passband relative bandwidths are 2%, 1.1% and 1.2%. The analog return loss in the three pass bands is better than 17dB, and the insertion loss in the pass bands is respectively smaller than 0.78dB, 1.25dB and 1.09dB. The common mode rejection of the first passband is better than 23.5dB, the common mode rejection of the second passband is better than 24.1dB, and the common mode rejection of the third passband is better than 24dB.
It should be noted that the above-mentioned embodiments are not intended to limit the scope of the present invention, and equivalent changes or substitutions made on the basis of the above-mentioned technical solutions fall within the scope of the present invention as defined in the claims.
Claims (4)
1. A multilayer packaged three passband SIW balanced bandpass filter comprising:
The first metal layer is provided with a differential input port and a differential output port for realizing energy transmission;
The first dielectric substrate is arranged on the lower surface of the first metal layer;
the second metal layer is arranged on the lower surface of the first dielectric substrate;
The second dielectric substrate is arranged on the lower surface of the second metal layer;
the third metal layer is arranged on the lower surface of the second dielectric substrate;
The third dielectric substrate is arranged on the lower surface of the third metal layer;
the fourth metal layer is arranged on the lower surface of the third dielectric substrate;
The first metal layer, the first dielectric substrate, the second metal layer, the second dielectric substrate, the third metal layer, the third dielectric substrate and the fourth metal layer are stacked in a multi-layer mode at the center;
The second metal layer is provided with two first energy coupling holes, the two first energy coupling holes are symmetrical about an axis A1A2, the two first energy coupling holes are arranged on an axis B1B2, and the first energy coupling holes realize coupling transmission of energy from the first medium substrate to the second medium substrate; the third metal layer is provided with two second energy coupling holes which are symmetrical about the axis A1A2, the two second energy coupling holes are arranged on the axis B1B2, the second energy coupling holes realize the coupling transmission of energy from the second medium substrate to the third medium substrate,
Wherein the first energy coupling hole and the second energy coupling hole are both rectangular and positioned at the strongest magnetic field of the resonant mode to realize magnetic coupling,
Wherein, the first medium substrate is provided with four first perturbation metal through holes on the axis A1A2, the four first perturbation metal through holes are respectively arranged at two sides of the axis B1B2 and are symmetrical relative to the axis B1B2, the diameters of the four first perturbation metal through holes are 0.6mm, the first medium substrate is provided with a plurality of first metal through holes, the first metal through holes are arranged around the first medium substrate and are in rectangular arrangement,
Wherein six second perturbation metal through holes are arranged on the axis A1A2 of the second medium substrate, three second perturbation metal through holes are respectively arranged on two sides of the axis B1B2 and are symmetrical relative to the axis B1B2, the diameters of the six second perturbation metal through holes are 1.2mm, a plurality of second metal through holes are arranged on the second medium substrate, the second metal through holes are arranged around the second medium substrate and are in rectangular arrangement,
Wherein six third perturbation metal through holes are arranged on the axis A1A2 of the third dielectric substrate, three of the six third perturbation metal through holes are respectively arranged on two sides of the axis B1B2 and are symmetrical relative to the axis B1B2, the diameter of each of the six third perturbation metal through holes is 1.2mm, a plurality of third metal through holes are arranged on the third dielectric substrate, the third metal through holes are arranged around the third dielectric substrate and are in rectangular arrangement,
The number of the differential input ports and the differential output ports is two, the differential input ports and the differential output ports are respectively arranged on two sides of the axis A1A2 on the first metal layer, two differential input ports are arranged on one side, two differential output ports are arranged on one side, and meanwhile, the differential input ports and the differential output ports are symmetrical relative to the axis B1B2 of the first metal layer.
2. The multilayer packaged three passband SIW balanced bandpass filter of claim 1, wherein the first energy coupling hole has a hole length of 3.9mm and a hole width of 0.8mm; the second energy coupling hole has a hole length of 3.2mm and a hole width of 0.8mm.
3. The multilayer packaged three passband SIW balanced bandpass filter of claim 1, wherein the differential input port is comprised of a differential input feed line for transmitting energy from the differential input port to the SIW cavity and a coplanar waveguide structure for connecting the differential feed line and the SIW cavity to obtain a match of the two; the widths of the differential input feeder line and the differential output feeder line are equal, and are 1.55mm.
4. The multilayer packaged three-passband SIW balanced bandpass filter of claim 1, wherein the materials of the first dielectric substrate, the second dielectric substrate, and the third dielectric substrate are Rogers 5880 substrates; the relative dielectric constants of the first dielectric substrate, the second dielectric substrate and the third dielectric substrate are 2.2, and the thicknesses of the first dielectric substrate, the second dielectric substrate and the third dielectric substrate are 0.508mm.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107819180A (en) * | 2017-09-27 | 2018-03-20 | 广东曼克维通信科技有限公司 | Substrate integration wave-guide device and substrate integral wave guide filter |
| CN113381140A (en) * | 2021-06-07 | 2021-09-10 | 南京智能高端装备产业研究院有限公司 | Balanced band-pass filter based on single-disturbance one-cavity multi-mode SIW |
| CN114388998A (en) * | 2021-12-03 | 2022-04-22 | 广东盛路通信科技股份有限公司 | Balanced filter jumper |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109818142A (en) * | 2018-12-31 | 2019-05-28 | 瑞声科技（南京）有限公司 | A kind of filter antenna |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107819180A (en) * | 2017-09-27 | 2018-03-20 | 广东曼克维通信科技有限公司 | Substrate integration wave-guide device and substrate integral wave guide filter |
| CN113381140A (en) * | 2021-06-07 | 2021-09-10 | 南京智能高端装备产业研究院有限公司 | Balanced band-pass filter based on single-disturbance one-cavity multi-mode SIW |
| CN114388998A (en) * | 2021-12-03 | 2022-04-22 | 广东盛路通信科技股份有限公司 | Balanced filter jumper |
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