CN112290182A - Double-frequency power divider based on substrate integrated coaxial line - Google Patents
Double-frequency power divider based on substrate integrated coaxial line Download PDFInfo
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Abstract
The invention discloses a double-frequency power divider based on a substrate integrated coaxial line, which is structurally provided with a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer and a third metal layer from top to bottom in sequence, and is divided into a first microstrip part, a substrate integrated coaxial line part and a second microstrip part from left to right in sequence; the power divider adopts a T-shaped power divider, the main body is arranged on a coaxial line part integrated on a substrate, the input end is provided with a section of impedance converter, the transmission lines of the two output ends are connected through two pairs of parallel coupling lines, and four parallel open-circuit branch lines are arranged. The invention can be realized by multilayer PCB technology, and has simple structure, low cost and easy integration. Compared with the microstrip line with the same structure, the substrate integrated coaxial line is of a shielding structure, can limit energy from radiating outwards, reduces loss, and simultaneously avoids crosstalk between adjacent signals; compared with the substrate integrated waveguide with the same structure, the invention takes TEM as a main mode, has no dispersion, large working bandwidth and small volume.
Description
Technical Field
The invention relates to a microwave millimeter wave passive device, in particular to a double-frequency power divider based on a substrate integrated coaxial line.
Background
With the continuous development of wireless communication technology, the requirements of communication systems on devices are higher and higher. How to keep the excellent characteristics of low loss, high power capacity and the like of the microwave element while reducing the volume, the mass and the cost of the element becomes a new challenge for researchers.
In a conventional microwave circuit, a power divider is mainly applied to a single frequency band, but with continuous progress of technology, a communication frequency band becomes more and more crowded, and it will become a future development trend that the power divider can work in multiple frequency bands simultaneously. In order to fully utilize limited frequency spectrum resources, the power divider can work in two frequency bands simultaneously, and is of practical significance.
The power divider is mainly designed in transmission line structures such as a microstrip and a coaxial cavity. Although the microstrip line power divider has the characteristics of small mass and volume, easy processing, low cost and the like, the microstrip line power divider has small power capacity and large insertion loss, and does not have a shielding device. With the coming of miniaturization of microwave circuits in the future, microstrip line power dividers may affect other circuit structures when integrated with other circuits. Although the coaxial cavity power divider has large power capacity and small loss, the coaxial cavity power divider has large structural size and is difficult to integrate with other structures. Substrate Integrated Waveguide (SIW) technology is a new Waveguide junction Integrated on a dielectric Substrate and having characteristics of low insertion loss, low radiation, high power capacity and the like, which is proposed in recent ten years, but has a cut-off wavelength, a large volume, and a dispersion structure, and is not suitable for being applied in a broadband range.
Disclosure of Invention
The purpose of the invention is as follows: the invention aims to provide a double-frequency power divider based on a substrate integrated coaxial line, which has the advantages of small in-band insertion loss, enhanced attenuation characteristic between two pass bands, simple structure, easiness in processing, low cost and suitability for batch production.
The technical scheme is as follows: in order to achieve the above object, the dual-frequency power divider based on the substrate integrated coaxial line comprises a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer and a third metal layer which are sequentially arranged from top to bottom, wherein the dual-frequency power divider is sequentially divided into a first microstrip part, a substrate integrated coaxial line part and a second microstrip part from left to right;
the second metal layer is provided with a first microstrip line, a second microstrip line, a third microstrip line and a power divider structure, the first microstrip line is arranged on the first microstrip part, the second microstrip line and the third microstrip line are arranged on the second microstrip part, and the power divider structure is arranged on the integrated coaxial line part of the substrate;
the power divider adopts a T-shaped junction power divider, and a first input end of the T-shaped junction power divider is an impedance converter and consists of a first line segment, a second line segment and a third line segment; the transmission line of the second output end of the T-shaped junction power divider is connected with the transmission line of the third output end by a first parallel coupling line and a second parallel coupling line;
a first parallel open-circuit branch line, a second parallel open-circuit branch line, a third parallel open-circuit branch line and a fourth parallel open-circuit branch line are arranged on the outer sides of the transmission line of the second output end and the transmission line of the third output end; the first parallel open-circuit branch line and the second parallel open-circuit branch line are arranged on the outer side of the transmission line of the third output end in parallel, the third parallel open-circuit branch line and the fourth parallel open-circuit branch line are arranged on the outer side of the transmission line of the second output end in parallel, one branch of the first parallel open-circuit branch line, the fourth parallel open-circuit branch line and the first parallel coupling line is on the same straight line, and one branch of the second parallel open-circuit branch line, the third parallel open-circuit branch line and the second parallel coupling line is on the same straight line;
the first parallel coupling line and the second parallel coupling line respectively comprise two parallel branch lines, one branch line of the two branch lines is connected with the transmission line of the second output end, and the other branch line of the two branch lines is connected with the transmission line of the third output end;
and a row of shielding holes are respectively arranged on two sides of the T-shaped power divider, the two pairs of parallel coupling line segments and the four parallel open-circuit branch lines, and the shielding holes penetrate through the first metal layer to the third metal layer.
Furthermore, the first microstrip line is used as a switching part of the input end of the substrate integrated coaxial line dual-frequency power divider, and the second microstrip line and the third microstrip line are used as switching parts of the output end of the substrate integrated coaxial line dual-frequency power divider.
Further, the characteristic impedances of the first line segment, the second line segment and the third line segment of the impedance transformer are respectively 50 ohms, 38.8 ohms and 27.5 ohms, wherein the lengths of the second line segment and the third line segment are equal to one quarter of the working wavelength.
Further, the lengths of the first parallel coupling line and the second parallel coupling line are equal to half of the working wavelength.
Further, the lengths of the first parallel open-circuit branch line, the second parallel open-circuit branch line, the third parallel open-circuit branch line and the fourth parallel open-circuit branch line are equal to one quarter of the working wavelength.
Further, the inner wall of the shielding hole is made of metal and is cylindrical.
Furthermore, the resonant frequency can be adjusted by changing the length of the parallel coupling line and the length of the parallel open-circuit branch line, and two working frequency bands of the power divider are changed.
Has the advantages that: compared with the prior art, the double-frequency power divider based on the substrate integrated coaxial line disclosed by the invention has the following advantages:
the PCB packaging structure can be realized based on a multilayer PCB process, is simple in structure, convenient to process and low in cost, and is suitable for batch production.
The invention can work in two frequency bands simultaneously, changes the lengths of the parallel coupling lines and the parallel open-circuit branch lines, can adjust resonance points, and changes the working frequency band of the power divider.
And thirdly, the attenuation characteristic between the two pass bands is greatly enhanced by utilizing four open-circuit branch lines connected in parallel, and the double-frequency transmission characteristic is obvious.
The T-shaped power divider is connected by the parallel coupling line instead of the single line segment, so that the electrical size of the open-circuit branch line can be reduced by half.
Compared with the microstrip line with the same structure, the microstrip line structure has the advantages of shielding effect, capability of inhibiting energy from radiating outwards and strong anti-interference capability.
Compared with the substrate integrated waveguide with the same structure, the invention takes the TEM as a main mode, has no dispersion, large working bandwidth and small volume.
Drawings
FIG. 1 is a side view of an embodiment of the present invention;
FIG. 2 is a schematic diagram of a first metal layer according to an embodiment of the present invention;
FIG. 3 is a diagram of a second metal layer in an embodiment of the invention;
FIG. 4 is a diagram of a third metal layer according to an embodiment of the present invention;
FIG. 5 is a graph of simulated dispersion of a substrate-integrated coaxial line in an embodiment of the present invention;
FIG. 6 is a graph of simulated frequency response of an impedance transformer in an embodiment of the present invention;
fig. 7 is a diagram of simulated frequency response of the dual-band power divider according to the embodiment of the present invention.
Detailed Description
In order to embody the innovativeness of the present invention, the following further describes the technical solution of the present invention with reference to the detailed description and the accompanying drawings.
The embodiment of the invention discloses a dual-frequency power divider based on a substrate integrated coaxial line, which has a structure shown in figures 1-4 and comprises a first metal plate 11, a first dielectric layer 12, a second metal layer 13, a second dielectric layer 14 and a third metal layer 15 which are sequentially arranged from top to bottom. As shown in fig. 1, the first dielectric layer 12 is smaller and is stacked on the second dielectric layer 14, which is the substrate integrated coaxial line portion 21 of the present invention, the main transmission structure of the present invention is located at this portion, and the two portions of the second dielectric layer 14 that are more than the first dielectric layer are the first microstrip portion 22 and the second microstrip portion 23, respectively, which are mainly used as the transition of the input/output end and the substrate integrated coaxial line. The first microstrip line 31, the second microstrip line 32 and the third microstrip line 33 arranged on the second metal layer 12 are used as input and output feeder lines, the characteristic impedance of the input and output feeder lines is set to be 50Ohm, and the input and output ends are respectively connected with the substrate integrated coaxial line.
The power divider structure adopts a T-shaped power divider, and a first input end of the T-shaped power divider is an impedance converter and consists of a first line segment 41, a second line segment 42 and a third line segment 43. The transmission line 51 at the second output end and the transmission line 52 at the third output end of the T-junction power divider are connected by a first parallel coupling line 61 and a second parallel coupling line 62, and a first parallel open stub line 71, a second parallel open stub line 72, a third parallel open stub line 73 and a fourth parallel open stub line 74 are provided outside the transmission line 51 at the second output end and the transmission line 52 at the third output end. The first parallel open stub 71 and the second parallel open stub 72 are disposed in parallel outside the transmission line 52 at the third output end, and the third parallel open stub 73 and the fourth parallel open stub 74 are disposed in parallel outside the transmission line 51 at the second output end. The first parallel coupled line 61 and the second parallel coupled line 62 each include two parallel branches, one of which is connected to the transmission line 51 of the second output terminal, and the other of which is connected to the transmission line 52 of the third output terminal. One of the first parallel open stub line 71, the fourth parallel open stub line 74 and the first parallel coupled line 61 is branched on the same straight line, and one of the second parallel open stub line 72, the third parallel open stub line 73 and the second parallel coupled line 62 is branched on the same straight line.
In addition, in the substrate integrated coaxial line part 21, a row of shielding holes 8 are respectively arranged on two sides of all transmission lines (including 41, 42, 43, 51, 52, 61, 62, 71, 72, 73 and 74), and the shielding holes 8 penetrate through the first metal layer 11 to the third metal layer 15, so that energy leakage can be limited, the insertion loss of the invention in an operating frequency band is small, and the crosstalk of adjacent signals is prevented.
The center frequencies of the two working frequency bands of the double-frequency power divider are in a symmetrical state, so that the middle value of the center frequencies of the two working frequency bands is used as the center frequency, and the design steps can be simplified.
The following specific design concepts and dimensions of the present invention are described in detail:
because the substrate integrated coaxial line is similar to the traditional coaxial line propagation mode, the TEM mode is taken as a main mode, and TE and TM modes can be propagated at the same time. TE and TM modes, which are higher order modes, have an effect on the results of the present invention, while TE10The mode is used as the first higher order mode of the substrate integrated coaxial line structure, therefore, only the TE is limited10Mode, the result of the present invention is not affected by higher order modes. The TE can be changed by adjusting the size D of the shielding holes, the distance S between two adjacent shielding holes and the distance A between two rows of shielding holes10The cutoff frequency of the mode. In thatThe dielectric materials of the first dielectric layer 12 and the second dielectric layer 14 are both Rogers5880, when the heights are both 0.508mm, D is 0.4mm, S is 0.8mm, A is 3mm, TE is10The dielectric frequency of the mode is greater than 20GHz, as shown in fig. 5, and is much greater than the working frequency of the present invention, and the performance in the working frequency band is not affected. Also, at this size, the energy leakage out of the gap of the shield hole can be limited to a negligible degree. All the shielding holes are metalized on the inner wall and are circular in shape.
At the first input of the coaxial line portion of the substrate integration is an impedance transformer which is designed to convert 50Ohm of the input to match 25Ohm at the operating frequency band. The characteristic impedance of the first segment 41 is 50Ohm, the second segment 42 is 38.8Ohm, the third segment 43 is 27.5Ohm, and the impedance of the first segment 41 is the same as the impedance of the transition of the first microstrip line 31 and the substrate integrated coaxial line, so that the loss at the transition is as small as possible. The second segment 42 and the third segment 43 are for impedance transformation, and have a length of one quarter of the operating wavelength, and the frequency response is shown in fig. 6.
The two pairs of parallel coupled lines 61 and 62 are required to maintain the state of high impedance lines, both 0.1mm wide and with a gap of 0.1mm, to promote low energy loss in the operating frequency band, with a length of one-half of the operating wavelength.
The other side of each of the two pairs of parallel coupling lines 61 and 62 is provided with a parallel open- circuit branch line 71, 72, 73 and 74, and the working frequency range of the dual-frequency power divider can be changed by adjusting the lengths of the parallel open- circuit branch lines 71, 72, 73 and 74, and the performance in the working frequency range can be adjusted by changing the impedance of the parallel open- circuit branch lines 71, 72, 73 and 74. In order to ensure the performance in the working frequency band, the lengths of the parallel open- circuit branch lines 71, 72, 73 and 74 are set to be one fourth of the working wavelength, and the widths are all 0.1 mm.
The frequency response of the invention is shown in fig. 7 by simulating a dual-frequency power divider by using three-dimensional simulation software HFSS. In simulation, the first working frequency band is 7.05-8.56 GHz, the relative bandwidth is 19.4%, the S21 and S31 in the band are within the range of 3 +/-0.5 dB, and the stop bands at two ends are both lower than-40 dB at the lowest. The second working frequency band is 10.9-12.32 GHz, the relative bandwidth is 12.2%, and the in-band S21 and S31 are within the range of 3 +/-0.3 dB.
Claims (7)
1. A dual-frequency power divider based on a substrate integrated coaxial line is characterized by comprising a first metal layer (11), a first dielectric layer (12), a second metal layer (13), a second dielectric layer (14) and a third metal layer (15) which are sequentially arranged from top to bottom, wherein the dual-frequency power divider is sequentially divided into a first microstrip part (22), a substrate integrated coaxial line part (21) and a second microstrip part (23) from left to right;
the second metal layer (13) is provided with a first microstrip line (31), a second microstrip line (32), a third microstrip line (33) and a power divider structure, the first microstrip line (31) is arranged on the first microstrip section (22), the second microstrip line (32) and the third microstrip line (33) are arranged on the second microstrip section (23), and the power divider structure is arranged on the substrate integrated coaxial line section (21);
the power divider adopts a T-shaped junction power divider, and a first input end of the T-shaped junction power divider is an impedance converter and consists of a first line segment (41), a second line segment (42) and a third line segment (43); a transmission line (51) at the second output end of the T-shaped power divider is connected with a transmission line (52) at the third output end by a first parallel coupling line (61) and a second parallel coupling line (62);
a first parallel open-circuit branch line (71), a second parallel open-circuit branch line (72), a third parallel open-circuit branch line (73) and a fourth parallel open-circuit branch line (74) are arranged at the outer sides of the transmission line (51) at the second output end and the transmission line (52) at the third output end; the first parallel open-circuit branch line (71) and the second parallel open-circuit branch line (72) are arranged on the outer side of the transmission line (52) of the third output end in parallel, the third parallel open-circuit branch line (73) and the fourth parallel open-circuit branch line (74) are arranged on the outer side of the transmission line (51) of the second output end in parallel, one branch of the first parallel open-circuit branch line (71), the fourth parallel open-circuit branch line (74) and the first parallel coupling line (61) is on the same straight line, and one branch of the second parallel open-circuit branch line (72), the third parallel open-circuit branch line (73) and the second parallel coupling line (62) is on the same straight line;
the first parallel coupling line (61) and the second parallel coupling line (62) respectively comprise two parallel branch lines, one branch line of the two branch lines is connected with the transmission line (51) of the second output end, and the other branch line of the two branch lines is connected with the transmission line (52) of the third output end;
a row of shielding holes (8) are respectively arranged on two sides of the T-shaped power divider, the two pairs of parallel coupling line segments and the four parallel open-circuit branch lines, and the shielding holes (8) penetrate through the first metal layer (11) to the third metal layer (15).
2. The substrate-integrated-coaxial-line-based dual-frequency power divider according to claim 1, wherein the first microstrip line (31) serves as an adapting portion of an input end of the substrate-integrated-coaxial-line dual-frequency power divider, and the second microstrip line (32) and the third microstrip line (33) serve as adapting portions of an output end of the substrate-integrated-coaxial-line dual-frequency power divider.
3. The substrate-integrated coaxial line-based dual-frequency power divider according to claim 1, wherein the characteristic impedances of the first line segment (41), the second line segment (42) and the third line segment (43) of the impedance transformer are 50 ohms, 38.8 ohms and 27.5 ohms, respectively, and the lengths of the second line segment (42) and the third line segment (43) are equal to one quarter of the operating wavelength.
4. The substrate-integrated coaxial-line-based dual-band power divider according to claim 1, wherein the lengths of the first parallel coupled line (61) and the second parallel coupled line (62) are equal to half of the operating wavelength.
5. The substrate-integrated-coaxial-based dual-band power splitter according to claim 1, wherein the first (71), second (72), third (73) and fourth (74) parallel open stubs have a length equal to one quarter of the operating wavelength.
6. The substrate-integrated coaxial-based dual-frequency power divider according to claim 1, wherein the inner wall of the shielding hole (8) is made of metal and is cylindrical.
7. The substrate-integrated-coaxial-line-based dual-frequency power divider according to claim 1, wherein the resonant frequency can be adjusted by changing the lengths of the parallel coupling lines and the parallel open-circuit branch lines, so as to change the two operating frequency bands of the power divider.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113422179A (en) * | 2021-06-04 | 2021-09-21 | 南京邮电大学 | Branch knot loading type broadband phase shifter of substrate integrated coaxial line |
| US11949145B2 (en) | 2021-08-03 | 2024-04-02 | Aptiv Technologies AG | Transition formed of LTCC material and having stubs that match input impedances between a single-ended port and differential ports |
| US11962085B2 (en) | 2021-05-13 | 2024-04-16 | Aptiv Technologies AG | Two-part folded waveguide having a sinusoidal shape channel including horn shape radiating slots formed therein which are spaced apart by one-half wavelength |
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| US11901601B2 (en) | 2020-12-18 | 2024-02-13 | Aptiv Technologies Limited | Waveguide with a zigzag for suppressing grating lobes |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5025232A (en) * | 1989-10-31 | 1991-06-18 | Texas Instruments Incorporated | Monolithic multilayer planar transmission line |
| CN201383535Y (en) * | 2009-04-01 | 2010-01-13 | 惠州市硕贝德通讯科技有限公司 | Rectangular waveguide-substrate integrated waveguide signal conversion and power divider |
| CN104091992A (en) * | 2014-07-17 | 2014-10-08 | 东南大学 | Compact type double-frequency stub coupler based on substrate integrated coaxial line technology |
| CN105826643A (en) * | 2016-04-26 | 2016-08-03 | 南京邮电大学 | Half-mode substrate integrated waveguide-based compact six-port circuit |
| CN106654495A (en) * | 2016-12-19 | 2017-05-10 | 中国电子科技集团公司第二十研究所 | Filtering power divider of X wave band substrate-based integrated waveguide coaxial cavity |
| CN106785289A (en) * | 2016-12-26 | 2017-05-31 | 西安电子科技大学 | Gao Gongfen based on three line coupled structures compares broadband power divider |
| CN206388836U (en) * | 2017-01-06 | 2017-08-08 | 深圳超级数据链技术有限公司 | Magic T power splitters |
| CN108736123A (en) * | 2018-04-17 | 2018-11-02 | 电子科技大学 | A kind of compact suspension micro-strip high isolation multichannel power combiner |
| US10270427B2 (en) * | 2015-12-07 | 2019-04-23 | Qorvo International Pte. Ltd. | On-chip balun circuit and multi-port antenna switch circuit |
| CN111063975A (en) * | 2019-12-17 | 2020-04-24 | 南京理工大学 | Ka-band GYSEL power divider based on ridge gap waveguide |
-
2020
- 2020-09-08 CN CN202010934087.5A patent/CN112290182B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5025232A (en) * | 1989-10-31 | 1991-06-18 | Texas Instruments Incorporated | Monolithic multilayer planar transmission line |
| CN201383535Y (en) * | 2009-04-01 | 2010-01-13 | 惠州市硕贝德通讯科技有限公司 | Rectangular waveguide-substrate integrated waveguide signal conversion and power divider |
| CN104091992A (en) * | 2014-07-17 | 2014-10-08 | 东南大学 | Compact type double-frequency stub coupler based on substrate integrated coaxial line technology |
| US10270427B2 (en) * | 2015-12-07 | 2019-04-23 | Qorvo International Pte. Ltd. | On-chip balun circuit and multi-port antenna switch circuit |
| CN105826643A (en) * | 2016-04-26 | 2016-08-03 | 南京邮电大学 | Half-mode substrate integrated waveguide-based compact six-port circuit |
| CN106654495A (en) * | 2016-12-19 | 2017-05-10 | 中国电子科技集团公司第二十研究所 | Filtering power divider of X wave band substrate-based integrated waveguide coaxial cavity |
| CN106785289A (en) * | 2016-12-26 | 2017-05-31 | 西安电子科技大学 | Gao Gongfen based on three line coupled structures compares broadband power divider |
| CN206388836U (en) * | 2017-01-06 | 2017-08-08 | 深圳超级数据链技术有限公司 | Magic T power splitters |
| CN108736123A (en) * | 2018-04-17 | 2018-11-02 | 电子科技大学 | A kind of compact suspension micro-strip high isolation multichannel power combiner |
| CN111063975A (en) * | 2019-12-17 | 2020-04-24 | 南京理工大学 | Ka-band GYSEL power divider based on ridge gap waveguide |
Non-Patent Citations (2)
| Title |
|---|
| SOUMAVA MUKHERJEE: ""Design of Four-Way Substrate Integrated Coaxial Line (SICL) Power Divider for K Band Applications"", 《2017 IEEE MTT-S INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC)》 * |
| 赵翔等: ""基于基片集成同轴线（SICL）的小型化超宽带功分器"", 《2018年全国微波毫米波会议论文集(上册)》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11962085B2 (en) | 2021-05-13 | 2024-04-16 | Aptiv Technologies AG | Two-part folded waveguide having a sinusoidal shape channel including horn shape radiating slots formed therein which are spaced apart by one-half wavelength |
| CN113422179A (en) * | 2021-06-04 | 2021-09-21 | 南京邮电大学 | Branch knot loading type broadband phase shifter of substrate integrated coaxial line |
| US11949145B2 (en) | 2021-08-03 | 2024-04-02 | Aptiv Technologies AG | Transition formed of LTCC material and having stubs that match input impedances between a single-ended port and differential ports |
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