CN116759779B - 5G millimeter wave filtering power division module - Google Patents
5G millimeter wave filtering power division module Download PDFInfo
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- CN116759779B CN116759779B CN202311058403.7A CN202311058403A CN116759779B CN 116759779 B CN116759779 B CN 116759779B CN 202311058403 A CN202311058403 A CN 202311058403A CN 116759779 B CN116759779 B CN 116759779B
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- 238000001914 filtration Methods 0.000 title claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 239000002184 metal Substances 0.000 claims abstract description 55
- 238000002955 isolation Methods 0.000 claims description 35
- 230000008878 coupling Effects 0.000 claims description 30
- 238000010168 coupling process Methods 0.000 claims description 30
- 238000005859 coupling reaction Methods 0.000 claims description 30
- 239000004020 conductor Substances 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 7
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- 238000006880 cross-coupling reaction Methods 0.000 claims description 3
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- 238000004891 communication Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 8
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
- H01P5/181—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers the guides being hollow waveguides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The application is suitable for the technical field of radio frequency communication, and provides a 5G millimeter wave filtering power division module, which comprises a filter, a power divider and a similar coaxial connection structure, wherein the filter and the power divider are stacked together and are cascaded through the similar coaxial connection structure, and the filter comprises: the first dielectric substrate and the second dielectric substrate; the first cavity and the fourth cavity are arranged on the first dielectric substrate, the second cavity and the third cavity are arranged on the second dielectric substrate, and the coplanar waveguide feed structures are arranged at two ends of the first metal grounding layer, and the two coplanar waveguide feed structures respectively form an input port and an output port of the filter; according to the application, the filter and the power divider are arranged by stacking the circuit boards, so that the processing difficulty can be reduced compared with the existing metal waveguide, LTCC technology and the like, and the factors which need to be considered in the design process are reduced, so that the defects of higher design and production cost in the existing technology are overcome.
Description
Technical Field
The application belongs to the technical field of radio frequency communication, and particularly relates to a 5G millimeter wave filtering power division module.
Background
Now, with the striding development of wireless communication technology, fifth generation (5G) mobile communication technology has become a major development direction of communication technology in recent years. In 5G communications, millimeter waves generally refer to electromagnetic waves in the 24.25GHz-52.6GHz frequency band. Millimeter wave wireless communication is a novel communication mode and has the characteristics of small volume, light weight, high transmission rate, good confidentiality and the like. The 5G millimeter wave frequency band can provide 100 times to 1000 times more communication capacity and transmission rate than 4G, and has extremely strong application value and technical advantages. Along with the large-scale application of millimeter wave frequency bands, a communication system is expected to have good frequency selectivity, excellent power distribution characteristics, low insertion loss and high isolation, and the miniaturization of a single radio frequency device is realized, the loss of a structural circuit is large, the design cost is high, and the realization of a miniaturized system circuit is not facilitated.
At present, with the development of 5G in the information industry, the microwave millimeter wave frequency band is applied in a large scale due to the abundant frequency spectrum resources. However, the frequency rise brings about difficulty in manufacturing and processing, and currently, a plurality of high-frequency band device manufacturing processes are applied, for example: metal waveguides, LTCC processes, etc., which are difficult to process, require many factors to be considered in designing, and result in higher design and production costs, with the need for further improvement.
Disclosure of Invention
The embodiment of the application aims to provide a 5G millimeter wave filtering power division module and aims to solve the problems of high design and production cost caused by the existing manufacturing process of high-frequency devices with more applications.
The embodiment of the application is realized in such a way that the 5G millimeter wave filtering power division module comprises a filter, a power divider and a similar coaxial connection structure, wherein the filter and the power divider are arranged in a stacked manner and are connected in cascade through the similar coaxial connection structure, and the filter comprises:
the first dielectric substrate and the second dielectric substrate;
the first cavity and the fourth cavity are arranged on the first medium substrate, and the second cavity and the third cavity are arranged on the second medium substrate;
the second metal grounding layer and the first metal grounding layer are arranged on the upper surface and the lower surface of the first dielectric substrate, the fourth metal grounding layer and the third metal grounding layer are arranged on the upper surface and the lower surface of the second dielectric substrate, and the second metal grounding layer and the third metal grounding layer are mutually attached;
the coplanar waveguide feed structures are arranged at two ends of the first metal grounding layer, and the two coplanar waveguide feed structures respectively form an input port and an output port of the filter;
the first dielectric substrate and the second dielectric substrate are respectively provided with a plurality of metal through holes which are regularly arranged.
According to the 5G millimeter wave filtering power division module provided by the embodiment of the application, the filtering power division module integration of the n257 frequency bands is realized through the circuit board (PCB), and the isolation and the matching of the filter and the power divider can be directly realized in the module under the condition of reducing external isolation and matching circuits; compared with the traditional filtering power divider, the embodiment of the application has the characteristics of high integration level, small volume, wide bandwidth, high isolation and simple process and low cost, can directly realize the function of filtering power division, is matched with the trend of high integration and miniaturization of future circuits, and is suitable for products of 5G millimeter wave frequency bands with miniaturized wide bandwidth and high isolation.
Drawings
Fig. 1 is a schematic structural diagram of a 5G millimeter wave filtering power division module according to an embodiment of the present application;
FIG. 2 is a schematic top view of a 5G millimeter wave filtering power splitting module in one embodiment;
fig. 3 is a schematic front view of a 5G millimeter wave filtering power division module according to an embodiment;
FIG. 4 is a schematic top view of a filter in one embodiment;
FIG. 5 is a schematic front view of a filter in one embodiment;
FIG. 6 is a schematic top view of a power divider according to an embodiment of the present application;
fig. 7 is a schematic front view of a power divider according to an embodiment of the present application;
fig. 8 is a simulation diagram of return loss and insertion loss S parameters of a 5G millimeter wave filtering power division module in one embodiment;
fig. 9 is a diagram of isolation results of a 5G millimeter wave filtering power division module in one embodiment.
In the accompanying drawings: 1-metal vias; 2-a first output branch; 3-a first impedance transformer; 4-a second dielectric substrate; 5-a first dielectric substrate; 6-type coaxial connection structure; 7-externally connecting a grounding column; 8-a second impedance transformer; 9-a third metal ground layer; 10-a second metal ground layer; 11-a second output branch; 12-a fourth metal ground layer; 13-a fifth metal ground layer; 14-coplanar waveguide feed structure; 15-a third dielectric substrate; 16-a fourth dielectric substrate; 17-a first coupling slot; 18-a second coupling slot; 19-a first ground post; 20-isolating resistance; 21-a hollowed-out window; 22-a second ground post; a 23-S-shaped groove; 24-a third ground post; 25-fourth ground posts; 26-a first metal ground layer; 27-a first cavity; 28-a second cavity; 29-a third cavity; 30-fourth cavity.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
It will be understood that the terms "first," "second," and the like, as used herein, may be used to describe various elements, but these elements are not limited by these terms unless otherwise specified. These terms are only used to distinguish one element from another element. For example, a first xx element may be referred to as a second xx element, and similarly, a second xx element may be referred to as a first xx element, without departing from the scope of this disclosure.
Specific implementations of the application are described in detail below in connection with specific embodiments.
As shown in fig. 1, the structure diagram of a 5G millimeter wave filtering power division module provided by the embodiment of the application includes a filter, a power divider and a coaxial-like connection structure, where the filter and the power divider are stacked and connected in cascade through the coaxial-like connection structure, and the filter includes:
a first dielectric substrate 5 and a second dielectric substrate 4;
a first cavity 27 and a fourth cavity 30 disposed on the first dielectric substrate 5, and a second cavity 28 and a third cavity 29 disposed on the second dielectric substrate 4;
a second metal grounding layer 10 and a first metal grounding layer 26 arranged on the upper and lower surfaces of the first dielectric substrate 5, and a fourth metal grounding layer 12 and a third metal grounding layer 9 arranged on the upper and lower surfaces of the second dielectric substrate 4, wherein the second metal grounding layer 10 and the third metal grounding layer 9 are mutually attached;
and coplanar waveguide feed structures 14 disposed at both ends of the first metal ground layer 26, the two coplanar waveguide feed structures 14 respectively constituting an input port and an output port of the filter;
the first dielectric substrate 5 and the second dielectric substrate 4 are respectively provided with a plurality of metal through holes 1 which are regularly arranged.
Specifically, the filter is an n 257-frequency-band SIW filter, the power divider is an n 257-frequency-band first-order one-to-two Wilkinson power divider, and the SIW filter is cascaded with the Wilkinson power divider.
More specifically, the SIW filter adopts a structure of a stacked arrangement of four cavities, namely a first cavity 27, a second cavity 28, a third cavity 29 and a fourth cavity 30, and filter response with two out-of-band transmission zeros is realized through electromagnetic coupling and cross coupling among the four cavities; the Wilkinson power divider can reduce the insertion loss of the power divider by adopting a strip line mode.
When the filter is applied, the impedance of the output/input ports of the filter and the power divider can be adjusted in advance, and under the condition that the impedance matching between the two devices is adjusted, the insertion loss of the module is the insertion loss of the filter and the insertion loss of the power divider. Because the port impedance of the filter and the power divider is 50 ohms, the impedance matching of the two devices (the filter and the power divider) can be realized by only adjusting the impedance of the coaxial-like connection structure 6 to be 50 ohms; namely, the coaxial-like connection structure 6 is connected with the SIW filter and the Wilkinson power divider to realize the function of a 50 ohm transmission line so as to obtain good impedance matching and low insertion loss effects.
In the embodiment, the n 257-frequency-band 5G millimeter wave filtering power division module is realized by arranging the filters and the power dividers through the layers of the multi-layer PCB layers, and the isolation and the matching of a plurality of devices (such as the filters and the power dividers) can be directly realized in the module under the condition of reducing external isolation and matching circuits; compared with the traditional filtering power divider, the 5G millimeter wave filtering power divider module has the characteristics of high integration level, small volume, wide bandwidth, high isolation, simple process and low cost, and can directly realize the function of filtering power division; and the method is matched with the trend of high integration and miniaturization of future circuits, and is suitable for miniaturized and high-isolation products in the 5G millimeter wave frequency band.
As shown in fig. 1 and fig. 4, in an example of the present embodiment, the first dielectric substrate 5 and the second dielectric substrate 4 are both provided with a plurality of metal through holes 1 that are regularly arranged; the regular arrangement can be rectangular arrangement, or other square or array modes; the center-to-center distance between adjacent metal through holes 1 is N5, the radius of each metal through hole 1 is R1, and the sizes of N5 and R1 can be flexibly adjusted, which is not particularly limited.
In one example of this embodiment, the radius R1 of the metal via 1 is 0.2mm and the height is 0.254mm. The thickness of each metal grounding layer is 0.035mm, the metal through holes 1 are positioned inside the second dielectric substrate 4 and the first dielectric substrate 5 and are respectively communicated with the metal grounding layers on the upper surface and the lower surface of the second dielectric substrate 4 and the first dielectric substrate 5, so as to form a rectangular resonant cavity comprising a first cavity 27, a second cavity 28, a third cavity 29 and a fourth cavity 30.
As shown in fig. 5 to 7, in one example of the present embodiment, at each of the outer centers of the first cavity 27 and the fourth cavity 30, there is provided a transition structure of a coplanar waveguide (i.e., the coplanar waveguide feeding structure 14 in fig. 1) extending to the first cavity 27 or the fourth cavity 30, respectively, for switching the TEM mode to the TE mode, the quasi-TEM mode electromagnetic wave being transmitted on the coplanar waveguide, and the TE mode electromagnetic wave being transmitted by the first cavity 27 and the fourth cavity 30. The signal enters from the coplanar waveguide feed structure 14, passes through the first cavity 27, the second cavity 28, the third cavity 29 and the fourth cavity 30, then is output from the output port of the filter, passes through the coaxial-like connection structure 6, enters the input port of the power divider, and is output in a split way.
As shown in fig. 1-2 and 5, in one embodiment, a first coupling groove 17 is provided at an edge between the first cavity 27 and the fourth cavity 30, a second coupling groove 18 is provided at an edge between the second cavity 28 and the third cavity 29, the first coupling groove 17 is provided on the first dielectric substrate 5, and the second coupling groove 18 is provided on the second dielectric substrate 4; to adjust the bandwidth and standing wave of the filter by the first coupling slot 17, the second coupling slot 18, and/or the coplanar waveguide feed structure 14.
The filter is a SIW filter, and the passband and the filtering characteristic are generated by adopting magnetic coupling among the first cavity 27, the second cavity 28, the third cavity 29 and the fourth cavity 30 in sequence; two transmission zeros are created at both ends of the passband by the electrical coupling between the first cavity 27, the fourth cavity 30, the vertical coupling is achieved by etching the first coupling slot 17 or the second coupling slot 18 on the metal ground layer at the edges of the cavities between the first cavity 27 and the second cavity 28, the third cavity 29 and the fourth cavity 30, and the bandwidth and standing wave of the filter are adjusted by adjusting the width of the feed line (i.e., N6 in fig. 4) and the length (i.e., N3 in fig. 4) or width (N4 in fig. 4) of the first coupling slot 17 or the second coupling slot 18. Between the second cavity 28 and the third cavity 29, coupling is achieved by removing metal vias to create magnetic coupling.
As shown in fig. 1-5, in one embodiment, an S-groove 23 is loaded between the first cavity 27 and the fourth cavity 30 for cross-coupling, introducing out-of-band transmission zeroes.
It will be appreciated that electric field energy is generated between the curved branches of the S-shaped groove 23, and the strength of the electric field is changed by adjusting the dimensions of the S-shaped groove 23 (i.e., L1 and L2 in fig. 4), so that the strength of the electric coupling between the first cavity 27 and the fourth cavity 30 is greater than that of the magnetic coupling.
Further, by changing the parameter L2 in the S-shaped groove 23, when the parameter L2 gradually increases, the zero points at both ends of the pass band gradually approach the pass band, indicating that the electric coupling strength at this time gradually becomes strong. When the parameter L1 in the S-shaped groove 23 increases gradually, the zero points at both ends of the passband become gradually distant from the passband, indicating that the electric coupling strength at this time becomes gradually weaker.
As shown in fig. 1-5, in one embodiment, the power divider includes a third dielectric substrate 15, a fourth dielectric substrate 16, an input branch, an impedance transformer, and an output branch;
four grounding posts are arranged at four corners of the third dielectric substrate 15 and the fourth dielectric substrate 16 in a penetrating manner and are connected with a fourth metal grounding layer 12 arranged on the lower surface of the third dielectric substrate 15 and a fifth metal grounding layer 13 arranged on the upper surface of the fourth dielectric substrate 16;
the input branch and the output branch are arranged between the third medium substrate 15 and the fourth medium substrate 16, one end of the input branch is connected with the similar coaxial connection structure 6, and the other end of the input branch is connected with the two output branches through impedance converters respectively.
In this embodiment, the four grounding posts are a first grounding post 19, a second grounding post 22, a third grounding post 24 and a fourth grounding post 25, respectively; the fourth metal grounding layer 12 connected to the lower surface of the third dielectric substrate 15 and the fifth metal grounding layer 13 arranged on the upper surface of the fourth dielectric substrate 16 can well isolate the interference of external signals on the power divider.
Specifically, the radii of the first grounding post 19, the second grounding post 22, the third grounding post 24 and the fourth grounding post 25 are all 0.2mm, and penetrate through the third dielectric substrate 15 and the fourth dielectric substrate 16 to connect two metal grounding layers (i.e., the fourth metal grounding layer 12 and the fifth metal grounding layer 13).
In one example of this embodiment, the two output branches are a first output branch 2 and a second output branch 11, respectively, one end of the input branch (as an input port of the power divider) is connected to the coaxial-like connection structure 6, and the other end is connected to an impedance transformer, and the other end of the impedance transformer is connected to the first output branch 2; meanwhile, the other end of the input branch is also connected with another impedance converter, and the other end of the other impedance converter is connected with a second output branch 11; the first output branch 2 and the second output branch 11 extend to the edge of the multilayer circuit board in directions away from each other and serve as output ports of the power divider so as to be connected with external devices, and output of the power divider is achieved.
In one example of the present embodiment, the first output branch 2 and the second output branch 11 have the same structure, and take the first output branch 2 as an example, the length is 3.8mm, the width is 0.8mm, and the height is 0.035mm; reference may be made in particular to fig. 2 and 6.
As shown in fig. 1, the relative dielectric constants of the first dielectric substrate 5, the second dielectric substrate 4, the third dielectric substrate 15, and the fourth dielectric substrate 16 are 2.2, and the loss tangent is 0.0009;
in one example of the present embodiment, the four dielectric substrates 5, 4, 15, 16 are made of Rogers RT/duroid 5880 (tm) material, and have a relative dielectric constant of 2.2, a loss tangent of 0.0009, and a thickness of 0.254mm.
The first dielectric substrate 5 and the second dielectric substrate 4 are mainly used for setting a filter, the third dielectric substrate 15 and the fourth dielectric substrate 16 are mainly used for setting a power divider, the space lamination setting of the filter and the power divider is realized, and the overall size of the module is miniaturized under the condition of meeting high isolation.
As shown in fig. 1 and 2, in one embodiment, the two impedance transformers are provided with isolation resistors 20 at their inner ends, which are close to each other.
The two impedance transformers have the same structure, namely, the first impedance transformer 3 and the second impedance transformer 8, namely, an isolation resistor 20 is arranged between the first impedance transformer 3 and the second impedance transformer 8.
The isolation resistor 20 can balance two output ports of the power divider to perform isolation, and if an open circuit or a short circuit occurs in a circuit, reflected power is absorbed by the isolation resistor 20. The magnitude of the resistance of the isolation resistor 20 can be flexibly selected according to the simulation experiment result of the isolation degree of the power divider, and is not particularly limited herein.
As shown in fig. 6 and 7, in an example of the present embodiment, taking the first impedance transformer 3 as an example, the structure of the first impedance transformer 3 is formed by cascading a plurality of microstrip lines, and the lengths of the microstrip lines are S1, S2, and S3, respectively, and the working frequency band of the power divider is affected by the lengths of each segment of the first impedance transformer 3 and the front end length S4 of the first output branch; with the change of the length S2 of one section of the first impedance transformer 3, the working frequency band of the power divider is also changed, and the change rule is related to the wavelength, and the first impedance transformer 3 not only plays the role of impedance transformation, but also is equivalent to a resonator for controlling the working frequency band. The working frequency range of the power divider can be influenced by the length S4 of the output branch, and the frequency range moves to low frequency along with the increase of S4, so that the S4 can be utilized to adjust the frequency range of the power divider.
In one example of the present embodiment, the isolation resistor 20 is square in shape and has a side length of 0.8mm.
As shown in fig. 2, in one embodiment, a hollow window 21 is formed on a surface of the fourth dielectric substrate 16 near one side of the third dielectric substrate 15, the hollow window 21 may accommodate the isolation resistor 20, a side length of the hollow window 21 is M1 (as shown in fig. 3), and M1 is greater than a side length of the isolation resistor 20.
In one embodiment, the projection structure of the impedance transformer on the third dielectric substrate 15 is a spoon-shaped structure.
Specifically, the two impedance transformers have the same structure, and taking the first impedance transformer 3 as an example, the structure of the first impedance transformer 3 is formed by cascading a plurality of microstrip lines, as shown in fig. 6.
In one embodiment, the coaxial-like connection 6 comprises an inner conductor and an outer wall;
the inner conductor is a semi-cylindrical metalized through hole penetrating through the second dielectric substrate 4, the third dielectric substrate 15 and the fourth dielectric substrate 16 and is used for connecting an input port of the power divider and an output port of the filter;
the outer wall is an external grounding post 7 arranged around the inner conductor and positioned on the second dielectric substrate 4, so that the impedance of the coaxial-like connection structure 6 can be adjusted by adjusting the distance between the metallized through hole and the external grounding post 7.
In this embodiment, the coaxial-like connection structure 6 may be formed by an inner conductor and an outer wall, the inner conductor is formed by a metallized through hole, and the metallized through hole is used as a signal line to electrically connect the coplanar waveguide feed structure 6 and the power divider of the filter, that is, the output port of the filter and the input port of the power divider; the outer wall is realized by adding a circle of external grounding post 7 on the periphery of the inner conductor, the external grounding post 7 penetrates through the second dielectric substrate 4 to connect two metal grounding layers, namely a second metal grounding layer 10 and a fourth metal grounding layer 12, and the coaxial connection structure 6 is made to have 50 ohm characteristic by adjusting the distance between the metallized through hole of the inner conductor and the external grounding post 7, so that impedance matching of two devices (a filter and a power divider) can be realized. The radius of the metallized through hole in the inner conductor of the coaxial connection structure 6 is 0.1 mm and the radius of the external grounding post 7 is 0.4mm.
The size of the 5G millimeter wave filtering power division module is 8.44 mm ×13.44 mm × 1.718 mm, and the performance of the module is tested, as shown in fig. 8, to show the S parameter diagram of the filtering power division module. The in-band standing wave of the whole filtering power division module is smaller than 1.55, the maximum value of the passband interpolation loss is 2.46dB, the minimum value is 2.1dB, and the in-band fluctuation is smaller than 0.4dB. Referring to fig. 9, the isolation of the filtering power splitting module is shown. In the passband, the isolation of the ports of the first output branch 2 and the second output branch 11 is greater than 14dB, and the isolation is good.
In an example of an embodiment, the thicknesses of the first dielectric substrate 5 and the second dielectric substrate 4 are N8 and N7 (see fig. 5), respectively, and the thicknesses of the third dielectric substrate 15 and the fourth dielectric substrate 16 are M3 and M2 (see fig. 3), respectively; n8, N7, M3 and M2 can be flexibly selected according to the specifications of the filter and the power divider, and when the thickness of the 5G millimeter wave filtering power division module is 1.718 mm, the sum of N8, N7, M3 and M2 is equal to/approximately equal to 1.718 mm, so that the design requirement can be met.
In another embodiment, a radio frequency device includes a 5G millimeter wave filtering power splitting module as described above.
In one example of this embodiment, reference may be made to fig. 8, which illustrates an S-parameter diagram of the 5G millimeter wave filtering power splitting module. The in-band standing wave of the whole 5G millimeter wave filtering power division module is smaller than 1.55, the maximum value of the passband interpolation loss is 2.46dB, the minimum value is 2.1dB, and the in-band fluctuation is smaller than 0.4dB. Referring to fig. 9, the isolation of the filtering power splitting module is shown. In the passband, the isolation of the ports of the first output branch 2 and the second output branch 11 is greater than 14dB, and the isolation is good. The size of the 5G millimeter wave filtering power division module is 8.44 mm multiplied by 13.44 mm multiplied by 1.718 mm in the passband, and accords with the miniaturization design trend of the module.
In the embodiment, the filter and the power divider are designed in a cascading manner to form the 5G millimeter wave filtering power division module. Through the integration of multiple devices (namely a filter and a power divider), the isolation and the matching of a single device are realized in the module, so that an external isolation circuit and a matching circuit are reduced, and meanwhile, through the laminated design of the multiple devices, the volume and the loss of the whole radio frequency equipment (also applicable to a radio frequency system) are reduced. Therefore, the design of the multi-device integrated module is also an important implementation means for realizing the miniaturized radio frequency front end. The 5G millimeter wave filtering power division module can adjust the performance of filtering and power division by changing parameter values of different circuits, is flexible in design and has good adjustability; the vertical interconnection structure of the coaxial-like connection structure 6 is more integrated by adopting the laminated PCB, is easy to combine with other radio frequency devices, has simple structure and low cost, and has good application potential in millimeter wave frequency bands.
It should be noted that, for the millimeter wave application frequency band of the fifth generation mobile communication (5G), the abundant spectrum resources of the microwave millimeter wave frequency band can be inevitably applied in a large scale, and the prospect is wide; however, the existing high-frequency device manufacturing processes are applied more, for example: metal waveguide, LTCC technology, etc., the processing difficulty of these technologies is great, the factors that need to be considered in designing are more, lead to its design and production cost to be higher; in this embodiment, the filtering power division module is designed by using a multi-layer PCB (or called multi-layer circuit board), and has the advantages of high integration level, small volume, wide bandwidth, high isolation, simple process, low cost, etc.
The embodiment of the application provides a 5G millimeter wave filtering power division module, and provides a radio frequency device based on the 5G millimeter wave filtering power division module, wherein the 5G millimeter wave filtering power division module adopts a stacked filter and a power divider to realize 5G millimeter wave filtering and power division of n257 frequency bands, and can directly realize isolation and matching of a plurality of devices (such as the filter and the power divider) in the module under the condition of reducing external isolation and matching circuits; compared with the traditional filtering power divider, the 5G millimeter wave filtering power divider module has the characteristics of high integration level, small volume, wide bandwidth, high isolation, simple process and low cost, and can directly realize the function of filtering power division; and is compatible with the trend of high integration and miniaturization of future circuits, and is suitable for miniaturization.
The foregoing description of the preferred embodiments of the application is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the application.
Claims (7)
1. The utility model provides a module is divided to 5G millimeter wave filtering merit, includes wave filter, merit divide ware and class coaxial coupling structure, its characterized in that, wave filter, merit divide the range upon range of setting and connect through class coaxial coupling structure cascade connection, the wave filter includes:
the first dielectric substrate and the second dielectric substrate;
the first cavity and the fourth cavity are arranged on the first medium substrate, and the second cavity and the third cavity are arranged on the second medium substrate;
the second metal grounding layer and the first metal grounding layer are arranged on the upper surface and the lower surface of the first dielectric substrate, the fourth metal grounding layer and the third metal grounding layer are arranged on the upper surface and the lower surface of the second dielectric substrate, and the second metal grounding layer and the third metal grounding layer are mutually attached;
the coplanar waveguide feed structures are arranged at two ends of the first metal grounding layer, and the two coplanar waveguide feed structures respectively form an input port and an output port of the filter;
the first dielectric substrate and the second dielectric substrate are respectively provided with a plurality of metal through holes which are regularly arranged;
the power divider comprises a third medium substrate, a fourth medium substrate, an input branch, an impedance converter and an output branch;
four grounding columns are arranged at four corners of the third dielectric substrate and the fourth dielectric substrate in a penetrating manner and are connected with a fourth metal grounding layer arranged on the lower surface of the third dielectric substrate and a fifth metal grounding layer arranged on the upper surface of the fourth dielectric substrate;
the input branches and the output branches are arranged between the third medium substrate and the fourth medium substrate, one end of the input branches is connected with the quasi-coaxial connecting structure, and the other end of the input branches is connected with the two output branches through the impedance converter respectively;
the coaxial-like connection structure comprises an inner conductor and an outer wall;
the inner conductor is a semi-cylindrical metalized through hole penetrating through the second dielectric substrate, the third dielectric substrate and the fourth dielectric substrate and is used for connecting an input port of the power divider and an output port of the filter;
the outer wall is an external grounding column which is arranged around the inner conductor and is positioned on the second dielectric substrate, so that the impedance of the coaxial-like connection structure is adjusted by adjusting the distance between the metallized through hole and the external grounding column.
2. The 5G millimeter wave filtering power division module of claim 1, wherein a first coupling groove is arranged at an upper edge between the first cavity and the second cavity, a second coupling groove is arranged at an upper edge between the third cavity and the fourth cavity, the first coupling groove is arranged on the first dielectric substrate, and the second coupling groove is arranged on the second dielectric substrate; to adjust the bandwidth and standing wave of the filter by the first coupling slot, the second coupling slot, and/or the coplanar waveguide feed structure.
3. The 5G millimeter wave filtering power division module of claim 1 or 2, wherein an S-shaped slot is loaded between the first cavity and the fourth cavity, and is used for realizing cross coupling and introducing out-of-band transmission zero points.
4. The 5G millimeter wave filtering power division module of claim 1, wherein the two impedance transformers are provided with isolation resistors at inner ends thereof that are close to each other.
5. The 5G millimeter wave filtering power division module of claim 4, wherein a hollowed window is formed on a surface of the fourth dielectric substrate, which is close to one side of the third dielectric substrate, and the hollowed window can accommodate the isolation resistor.
6. The 5G millimeter wave filtering power division module of claim 1, wherein the projection structure of the impedance transformer on the third dielectric substrate is a scoop-shaped structure.
7. The 5G millimeter wave filter power division module of claim 1, wherein the first, second, third, and fourth dielectric substrates have a relative permittivity of 2.2 and a loss tangent of 0.0009.
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