CN217719915U - Substrate integrated waveguide band-pass filter - Google Patents

Substrate integrated waveguide band-pass filter Download PDF

Info

Publication number
CN217719915U
CN217719915U CN202222209881.0U CN202222209881U CN217719915U CN 217719915 U CN217719915 U CN 217719915U CN 202222209881 U CN202222209881 U CN 202222209881U CN 217719915 U CN217719915 U CN 217719915U
Authority
CN
China
Prior art keywords
metalized
hole array
waveguide
holes
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202222209881.0U
Other languages
Chinese (zh)
Inventor
林晗
郭永康
孙洪章
王瑞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chengdu University of Information Technology
Original Assignee
Chengdu University of Information Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chengdu University of Information Technology filed Critical Chengdu University of Information Technology
Priority to CN202222209881.0U priority Critical patent/CN217719915U/en
Application granted granted Critical
Publication of CN217719915U publication Critical patent/CN217719915U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The utility model provides an integrated waveguide band pass filter of substrate for solve the microwave filter of the rectangular waveguide type among the prior art and hardly realize the miniaturization, also be difficult for integrating the defect in the millimeter wave communication system. The utility model discloses an integrated waveguide band pass filter of substrate, including medium substrate, surface metal level, metallization through-hole array, the metallization through-hole array of the width direction of metallization through-hole array and length direction's metallization through-hole array constitute the filtering structure that waveguide perceptual coupling window and waveguide resonant cavity set up in turn. The utility model discloses a set up width direction's metallized through-hole array and length direction's metallized through-hole array on medium substrate and surface metal layer to form the filtering structure of n-1 waveguide resonant cavity and insert the rectangular waveguide filter in n waveguide perceptual coupling window on the medium substrate that can be used for microstrip circuit, obtain the same function and performance. And can be applied to millimeter wave communication systems.

Description

Substrate integrated waveguide band-pass filter
Technical Field
The utility model belongs to the technical field of the microwave radio frequency technique and specifically relates to an integrated waveguide band pass filter of substrate.
Background
The rectangular waveguide, also called traditional waveguide, traditional metal waveguide or metal rectangular waveguide, is a regular metal waveguide made of metal material, with a rectangular cross section and filled with air medium, and can guide the directional transmission of electromagnetic wave.
A Substrate Integrated Waveguide (SIW) is a Waveguide between a microstrip and a rectangular Waveguide, and is a Waveguide structure that uses an array of metallized through holes to realize Waveguide on a dielectric Substrate. From the technical structure, the substrate integrated waveguide can be regarded as a rectangular waveguide after the side wall is periodically slotted, so that the propagation characteristic of the substrate integrated waveguide is similar to that of the rectangular waveguide, and the function of the rectangular waveguide can be realized. The substrate integrated waveguide is a waveguide structure with low loss, low radiation, high Q value, high power capacity and easy integration. The structure of the substrate integrated waveguide is a metallized through hole array on a dielectric substrate. The structure can be accurately realized through a PCB (printed circuit board) or LTCC (low temperature co-fired ceramic) process and can be seamlessly integrated with a microstrip circuit.
In an electronic circuit, a filter as a frequency signal selection device passes a specific frequency component in a signal, and attenuates or suppresses other frequency components greatly. Filters, particularly passive filters, are indispensable microwave devices in wireless communication systems. The rectangular waveguide type microwave filter has advantages of low loss, high quality factor and large power capacity, and has been widely used in wireless communication systems. In order to obtain excellent filtering performance, the filter usually adopts a relatively complex structure, for example, some filters adopt a three-layer or four-layer structure, and various materials are used, so that the product size of the filter is large, and the processing and manufacturing cost is high.
The development of wireless communication technology continues to evolve, and especially millimeter wave communication technology comes, wireless communication systems are more and more in realization function, higher and more in realization performance, and more complex in realization structure. This requires that the devices employed in the wireless communication system be small in size and easily integrated in the system connection.
However, the inventor finds that, in the course of implementing the technical solutions in the embodiments of the present invention, the existing rectangular waveguide type microwave filter has at least the following technical problems:
to maintain the existing excellent performance, the existing design structure must be maintained, the miniaturization is difficult to realize in size, and the existing mode can only be maintained when the system is connected with the system, and the development of the millimeter wave communication technology cannot be kept up with.
SUMMERY OF THE UTILITY MODEL
In view of this, an object of the embodiments of the present invention is to provide a substrate integrated waveguide band pass filter, which is used to solve the defects that the rectangular waveguide type microwave filter in the prior art is difficult to be miniaturized and is difficult to be integrated into a millimeter wave communication system. The utility model discloses a set up metallization through-hole on medium substrate and surface metal layer along the n that medium substrate width direction arranged arranges x2 and is listed as metallization through-hole array, arrange x2 and be listed as metallization through-hole array outside at n, set up metallization through-hole along 2 that medium substrate width direction arranged are listed as metallization through-hole array to form the filter structure of n-1 waveguide resonant cavity and insert the rectangular waveguide filter in n waveguide perceptual coupling window on the medium substrate that can be used for microstrip circuit's small-size or miniature size and surface metal layer, obtain the function and the performance the same with rectangular waveguide conduction band pass filter. And can be applied to millimeter wave communication systems.
In order to achieve the above object, the embodiment of the present invention adopts the following technical solutions:
the embodiment of the utility model provides an in provide a substrate integrated waveguide band pass filter, band pass filter includes:
the dielectric substrate is of a cuboid structure;
the surface metal layer covers the upper surface and the lower surface of the medium substrate;
an input feed line electrically connected to the input port of the surface metal layer;
an output feed line electrically connected to an output port of the surface metal layer;
a metalized through hole array, wherein the metalized through holes of the metalized through hole array penetrate through the medium substrate and the surface metal layer; the metalized through hole array comprises a metalized through hole array in the width direction and a metalized through hole array in the length direction;
the metalized through hole array in the width direction is an n-row x 2-column metalized through hole array formed by arranging the metalized through holes along the width direction of the medium substrate, and n is a positive integer greater than or equal to 2;
the metalized through hole array in the length direction is a 2-row x 1-column metalized through hole array formed by arranging the metalized through holes along the length direction of the medium substrate;
the 2 rows of the metallized through holes of the metallized through hole array in the length direction are respectively arranged at the outer sides of the metallized through hole array in the width direction to form n-1 waveguide resonant cavities similar to rectangular waveguides; the length Li of the ith waveguide resonant cavity is the distance between the ith row of metalized through holes and the (i + 1) th row of metalized through holes of the metalized through hole array in the width direction forming the ith waveguide resonant cavity; i is a positive integer greater than or equal to 1 and less than or equal to n-1;
a waveguide inductive coupling window corresponding to the jth row of metalized through holes is formed by the jth row of metalized through holes of the metalized through hole array in the width direction at intervals of columns, and the thickness of the waveguide inductive coupling window corresponding to the jth row of metalized through holes is Wj; wj is the through hole center distance of two metalized through holes on two sides of the interval of the row of the jth metalized through holes, and j is a positive integer which is more than or equal to 1 and less than or equal to n.
In a possible embodiment, the via structures of the metallized vias of the metallized via array are made by an etching process, and the metal layers in the vias of the metallized via array are made by an electroplating process and/or a sputtering process.
In a possible embodiment, the material of the dielectric substrate is Rogers RT6002 microwave material.
In a possible embodiment, the input feed line and the output feed line are microstrip lines.
Based on above-mentioned technical scheme, the embodiment of the utility model provides an in substrate integrated waveguide band pass filter, through set up the metallization through-hole on medium substrate and surface metal layer along the row of n x2 row metallization through-hole array that medium substrate width direction arranged arranges, arrange the row of x2 in n and metalize the through-hole array outside, set up the metallization through-hole along 2 rows of x1 row metallization through-hole array that medium substrate width direction arranged to form n-1 waveguide resonant cavity and insert the filter structure of the rectangular waveguide filter in n waveguide perceptual coupling windows on the medium substrate that can be used for microstrip circuit's small-size or micro-size and surface metal layer, obtain the function and the performance the same with rectangular waveguide conduction band pass filter. On one hand, the substrate integrated waveguide band-pass filter in the embodiment of the present invention also has the characteristics of low loss, low radiation, high Q value and high power capacity of the rectangular waveguide; on the other hand, the substrate integrated waveguide band-pass filter is manufactured by adopting the same or similar LTCC or PCB processing technology as the microstrip circuit, so that the substrate integrated waveguide band-pass filter can be seamlessly integrated with the microstrip circuit; on the other hand, based on the LTCC or PCB process, the length Li of the waveguide resonant cavity of the substrate integrated waveguide band-pass filter and the thickness of the waveguide inductive coupling window Wj can be accurately controlled, so that the manufactured substrate integrated waveguide band-pass filter can be free of debugging, the manufacturing cost is reduced, and the product yield is greatly improved.
So, on the medium substrate and the surface metal layer that can be used for microstrip circuit's small-size or miniature size, adopt the same machining precision of microstrip circuit high, the processing cost is low, LTCC or PCB technology that the product yield is high, make the embodiment of the utility model provides an in the integrated waveguide band pass filter of substrate, it not only has the same function and the technical characteristic of rectangular waveguide band pass filter, but also can accomplish to exempt from the debugging, and then can use in the millimeter wave communication system.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 shows a schematic structural diagram of a substrate integrated waveguide bandpass filter in a three-dimensional view according to an embodiment of the present invention;
fig. 2 shows a schematic structural diagram of a substrate integrated waveguide bandpass filter in a two-dimensional view in an embodiment of the invention;
fig. 3 is a diagram illustrating simulation results of a substrate integrated waveguide bandpass filter according to an embodiment of the present invention.
Wherein, the corresponding relation between the reference numbers and the component names in the figure is as follows:
the dielectric substrate 10, the surface metal layer 20, the input feeder 30, the output feeder 40, the metalized through hole array 50, the waveguide resonant cavity 510 and the waveguide inductive coupling window 520.
Detailed Description
In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the following description will be combined with practical applications, referring to the drawings of the embodiments of the present invention, to clearly and completely describe the technical solution in the embodiments of the present invention, and obviously, the described embodiments are part of the embodiments of the present invention, rather than all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
The present invention will be further explained with reference to the drawings and examples.
Fig. 1 shows a schematic structural diagram of a substrate integrated waveguide bandpass filter in a three-dimensional view according to an embodiment of the present invention;
fig. 2 shows a schematic structural diagram of a substrate integrated waveguide bandpass filter in a two-dimensional view in an embodiment of the invention;
referring now to fig. 1, while referring to fig. 2, in an embodiment of the present invention, a substrate integrated waveguide band pass filter includes:
the dielectric substrate 10, the said dielectric substrate 10 is a cuboid structure;
the surface metal layer 20, the surface metal layer 20 covers the upper surface and the lower surface of the medium substrate 10;
an input feed line 30, the input feed line 30 being electrically connected to an input port of the surface metal layer 20;
an output feed line 40, the output feed line 40 being electrically connected to an output port of the surface metal layer 20;
a metalized through hole array 50, wherein the metalized through holes of the metalized through hole array 50 penetrate through the dielectric substrate 10 and the surface metal layer 20; the metalized via array 50 comprises a width-directional metalized via array and a length-directional metalized via array;
the metallization through hole array in the width direction is an n-row x 2-column metallization through hole array formed by arranging the metallization through holes along the width direction of the dielectric substrate 10, and n is a positive integer greater than or equal to 2;
the metallized through hole array in the length direction is a metallized through hole array in 2 rows and 1 columns formed by arranging the metallized through holes along the length direction of the dielectric substrate 10;
the 2 rows of metallized through holes of the metallized through hole array in the length direction are respectively arranged at the outer sides of the metallized through hole array in the width direction to form n-1 quasi-rectangular waveguide resonant cavities 510; the length Li of the ith waveguide resonant cavity 510 is the distance between the ith row of metalized through holes and the (i + 1) th row of metalized through holes forming the width-wise metalized through hole array of the ith waveguide resonant cavity 510; i is a positive integer greater than or equal to 1 and less than or equal to n-1;
forming a waveguide inductive coupling window 520 corresponding to the jth row of metalized through holes through column intervals by the jth row of metalized through holes of the metalized through hole array in the width direction, wherein the thickness of the waveguide inductive coupling window 520 corresponding to the jth row of metalized through holes is Wj; wj is the through hole center distance of two metalized through holes on two sides of the interval of the row of the jth metalized through holes, and j is a positive integer which is more than or equal to 1 and less than or equal to n.
The embodiment of the utility model provides an in, utilize length direction's metallized through-hole array, and two rows of adjacent metallized through-hole formation electricity walls of width direction's metallized through-hole array to form the waveguide resonant cavity with traditional periodic grooved rectangular waveguide similar structure, this type of rectangular waveguide's waveguide resonant cavity 510's propagation characteristic is similar with rectangular waveguide, can realize rectangular waveguide's function. That is, the embodiment of the present invention provides a substrate integrated waveguide band pass filter, which also has the characteristics of low loss, low radiation, high Q value and high power capacity of rectangular waveguide.
The term "electrical wall", whatever is the curved surface that meets the boundary conditions of an ideal conductor (epslon = infinite). Et and Hn are both 0 inside the conductor; the electric line of force is perpendicular to the surface of the conductor; the magnetic lines of force are parallel to the surface of the conductor.
In the embodiment of the utility model, utilize the row interval between every row of metallized through-hole of width direction's metallized through-hole array constitutes the waveguide perceptual coupling window 520 that corresponds with this row of metallized through-hole, and then replaces prior art's coupling hole, controls the coupling between the waveguide resonant cavity 510 of the quasi-rectangular waveguide of this row of metallized through-hole both sides, carries out filtering to the frequency signal of process.
The embodiment of the utility model provides an in, the size of the row interval between a certain row of metallized through-hole of accessible adjustment, the adjustment corresponds the coupling intensity between two waveguide resonant cavities 510 with this row of metallized through-hole.
In the embodiment of the utility model provides an in, metallized through hole array 50's metallized through hole arrangement mode has formed waveguide inductive coupling window 520 and waveguide resonant cavity 510 filter structure that sets up in turn, thereby makes the embodiment of the utility model provides an in substrate integrated waveguide band pass filter's low-loss, low radiation, high Q value, high power capacity etc. characteristics, more reliable and more stable.
In the embodiment of the present invention, metallized through-hole array 50, accessible are verified through long-time large-scale industrial application, and the Low Temperature Co-fired Ceramic (Low Temperature Co-fired Ceramic, LTCC) or Printed Circuit Board (Printed Circuit Board, PCB) technology that technology is mature is made accurately. On one hand, compared with a metal rectangular waveguide manufactured by a machining process, the substrate integrated waveguide band-pass filter manufactured based on the LTCC or PCB process in the embodiment of the invention is more excellent in processing precision and processing cost, and can realize small-sized and miniaturized processing on the processing size; on the other hand, owing to adopt the same or similar processing technology with microstrip circuit, and then the embodiment of the utility model provides an in the substrate integrated waveguide band pass filter can with microstrip circuit seamless integration. On the other hand, based on LTCC or PCB process manufacturing, the length Li of the waveguide resonant cavity 510 of the substrate integrated waveguide bandpass filter and the thickness Wj of the waveguide inductive coupling window 520 can be precisely controlled, so that the manufactured substrate integrated waveguide bandpass filter can be free from debugging, and the product yield is greatly improved while the manufacturing cost is reduced.
In a possible embodiment, the via structure of the metalized vias of the metalized via array 50 is formed by an etching process, and the metal layer in the vias of the metalized via array 50 is formed by an electroplating process and/or a sputtering process.
In the embodiment of the utility model, the diameter of the metallization through-hole of metallization through-hole array 50 specifically can be 0.5mm, and interval between the metallization through-hole specifically can be 1mm, on this basis, if the diameter of metallization through-hole has increased, need reduce the interval between the metallization through-hole to prevent too much revealing of electromagnetic wave signal.
In the embodiment of the present invention, the dielectric substrate 10 is a dielectric plate, for example, a ceramic plate, which can be used for filter design. Specifically, rogers5880, rogers RT6002 and Rogers3010 from Rogers (Rogers) may be mentioned.
In a possible embodiment, the material of the dielectric substrate 10 is Rogers RT6002 microwave material. The Rogers RT6002 microwave material is a low-loss and low-dielectric-constant laminated board, has excellent dielectric constant and temperature change resistance, and can meet the design requirements of filters, oscillators and delay lines. The low thermal bulging coefficient of the RT6002 microwave material in the Z-axis direction ensures the structural and performance stability of the metalized through holes arranged on the RT6002 microwave material. The thickness of the dielectric substrate 10 may be, for example, 0.508mm, depending on the filter design requirements.
In the embodiment of the present invention, the input feeder 30 is an input feeder that can be used for the substrate integrated waveguide band pass filter.
The embodiment of the utility model provides an in output feeder 40, for can be used for the integrated waveguide band pass filter's of substrate output feeder.
In order to make the substrate integrated waveguide band pass filter in the embodiment of the present invention can be seamlessly connected with a microstrip line transmission line, in a possible implementation manner, the input feeder 30 and the output feeder 40 are both microstrip lines.
Specifically, the input feed line 30 and the output feed line 40 are 50-ohm microstrip lines, the width of which may be 1.28mm, and the length of which may be 5.24mm.
Example 1
A substrate integrated waveguide bandpass filter is provided in embodiment 1. The central frequency of the substrate integrated waveguide band-pass filter is 20.3GHz, the pass-band bandwidth is 2.6GHz, the pass-band frequency is (19 GHz-21.6 GHz), the maximum insertion loss in the pass-band is-0.4 dB, the return loss is less than-18 dB, and the out-of-band rejection is less than-22 dB.
The dielectric substrate of the substrate integrated waveguide band-pass filter in the embodiment 1 is made of a Rogers RT6002 microwave material with a dielectric constant of 2.94, and the thickness of the dielectric substrate is 0.508mm;
the diameter of the metalized through holes of the metalized through hole array is 0.5mm, and the distance between the metalized through holes is 1mm;
the input feeder line and the output feeder line are 50 ohm microstrip lines, the width of the microstrip lines is 1.28mm, and the length of the microstrip lines is 5.24mm.
Fig. 3 is a diagram showing simulation results of the substrate integrated waveguide bandpass filter according to the embodiment of the present invention. Fig. 3 is a diagram showing a simulation result of the substrate integrated waveguide band-pass filter provided in embodiment 1.
Referring now to fig. 3, it can be seen from the simulation result shown in fig. 3 that the embodiment 1 of the present invention provides a substrate integrated waveguide bandpass filter, which has low insertion loss, excellent out-of-band rejection performance, and good Q value.

Claims (4)

1. A substrate integrated waveguide bandpass filter, the bandpass filter comprising:
the dielectric substrate is of a cuboid structure;
the surface metal layer covers the upper surface and the lower surface of the medium substrate;
an input feed line electrically connected to the input port of the surface metal layer;
an output feed line electrically connected to an output port of the surface metal layer;
a metalized through hole array, wherein the metalized through holes of the metalized through hole array penetrate through the medium substrate and the surface metal layer; the metalized through hole arrays comprise a metalized through hole array in the width direction and a metalized through hole array in the length direction;
the metalized through hole array in the width direction is an n-row x 2-column metalized through hole array formed by arranging the metalized through holes along the width direction of the medium substrate, and n is a positive integer greater than or equal to 2;
the metalized through hole array in the length direction is a 2-row x 1-column metalized through hole array formed by arranging the metalized through holes along the length direction of the medium substrate;
the 2 rows of the metallized through holes of the metallized through hole array in the length direction are respectively arranged at the outer sides of the metallized through hole array in the width direction to form n-1 waveguide resonant cavities similar to rectangular waveguides; the length Li of the ith waveguide resonant cavity is the distance between the ith row of metalized through holes and the (i + 1) th row of metalized through holes of the metalized through hole array in the width direction forming the ith waveguide resonant cavity; i is a positive integer greater than or equal to 1 and less than or equal to n-1;
a waveguide inductive coupling window corresponding to the jth row of metalized through holes is formed by the jth row of metalized through holes of the metalized through hole array in the width direction at intervals of columns, and the thickness of the waveguide inductive coupling window corresponding to the jth row of metalized through holes is Wj; wj is the through hole center distance of two metalized through holes on two sides of the interval of the row of the jth metalized through holes, and j is a positive integer which is more than or equal to 1 and less than or equal to n.
2. The substrate integrated waveguide bandpass filter according to claim 1, wherein the via structures of the metallized vias of the metallized via array are made by an etching process, and the in-via metal layers of the metallized vias of the metallized via array are made by an electroplating process and/or a sputtering process.
3. The substrate integrated waveguide bandpass filter according to claim 1 or 2, wherein the material of the dielectric substrate is a Rogers RT6002 microwave material.
4. The substrate integrated waveguide bandpass filter according to claim 1 or 2, wherein the input feed line and the output feed line are microstrip lines.
CN202222209881.0U 2022-08-22 2022-08-22 Substrate integrated waveguide band-pass filter Active CN217719915U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202222209881.0U CN217719915U (en) 2022-08-22 2022-08-22 Substrate integrated waveguide band-pass filter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202222209881.0U CN217719915U (en) 2022-08-22 2022-08-22 Substrate integrated waveguide band-pass filter

Publications (1)

Publication Number Publication Date
CN217719915U true CN217719915U (en) 2022-11-01

Family

ID=83785620

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202222209881.0U Active CN217719915U (en) 2022-08-22 2022-08-22 Substrate integrated waveguide band-pass filter

Country Status (1)

Country Link
CN (1) CN217719915U (en)

Similar Documents

Publication Publication Date Title
CN110459840B (en) Communication device, dielectric filter, and dielectric block
CN209804860U (en) Dielectric filter
CN111446532B (en) Coaxial resonant cavity based on substrate integrated waveguide and filter thereof
CN112768857A (en) Serial six-order substrate integrated waveguide cross-coupling filter
CN113285197B (en) Three-dimensional impedance network double-side loaded slow wave substrate integrated waveguide and design method thereof
CN113300065B (en) Mixed mode band-pass filter based on triangular substrate integrated waveguide
CN116759779B (en) 5G millimeter wave filtering power division module
CN104767023B (en) A kind of substrate integration wave-guide electric tuning of variable passband number is shaken unit
CN112928408B (en) LTCC technology-based 5G communication frequency band-pass filter
CN1949588B (en) Dielectric device
CN217719915U (en) Substrate integrated waveguide band-pass filter
CN104466316A (en) 2X wave band defect joint structure-half mode substrate integrated waveguide filter
CN111525904A (en) Laminated high-pass filter
CN114335944B (en) Gap waveguide with band-pass filtering function
CN209747694U (en) Low-pass filter with complementary split resonant ring and U-shaped groove defected ground
CN112751543A (en) Filter bank
CN112332050A (en) Correctable band-pass filter based on LTCC process
CN112909459B (en) W-waveband waveguide filter
CN114747087A (en) Dielectric waveguide resonator and dielectric waveguide filter
CN113922016A (en) Filter and communication equipment
CN114267928B (en) W-waveband waveguide band-pass filter
CN113314816B (en) Composite dielectric millimeter wave filter based on multilayer technology
CN215266622U (en) Amplitude equalizer in microwave signal transmission
CN115882183B (en) Low-loss line transmission structure
CN219226579U (en) Microstrip hairpin band-pass filter based on alumina ceramics

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant