CN113097681A - Filter power divider based on integrated substrate gap waveguide - Google Patents
Filter power divider based on integrated substrate gap waveguide Download PDFInfo
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- CN113097681A CN113097681A CN202110428173.3A CN202110428173A CN113097681A CN 113097681 A CN113097681 A CN 113097681A CN 202110428173 A CN202110428173 A CN 202110428173A CN 113097681 A CN113097681 A CN 113097681A
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Abstract
The invention relates to a filtering power divider based on integrated substrate gap waveguide. This power divider includes: sequentially overlapping and packaging an upper dielectric plate, a middle dielectric plate and a lower dielectric plate; the upper surface of the upper dielectric plate is provided with a first metal layer, the first metal layer is provided with a gap, the gap is used for adding an isolation resistor on the packaged filtering power divider, and the isolation degree of two output ports in the filtering power divider is adjusted by adjusting the position and the size of the gap; the filtering power dividing circuit structure is printed on the lower surface of the upper dielectric plate; the filtering power dividing circuit structure comprises a microstrip line unit and a step impedance transformation structure; the step impedance transformation structure is arranged on the sixth branch microstrip line in the microstrip line unit; and the length of the branch of the step impedance transformation microstrip line in the step impedance transformation structure is adjusted to adjust the position of the transmission zero point and the passband bandwidth of the filtering power divider. The invention can obtain wider bandwidth and is suitable for higher frequency bands.
Description
Technical Field
The invention relates to the technical field of electronics, in particular to a filtering power divider based on integrated substrate gap waveguide.
Background
In recent years, the key technology development of the fifth generation mobile communication system 5G has been a key point and a hot spot in the field of mobile communication research, and with the large-scale application of 5G, modern communication systems put forward higher requirements on the size of integrated circuits, and the research on high-performance microwave devices with broadband, integration and miniaturization has great engineering application value. This will put forward higher requirements on the synthesis and design of devices, and will also greatly advance the development of miniaturization and integration of circuits. The filter and the power divider are important components in a microwave communication system, and in the process of pursuing miniaturization, the filter power divider combines the frequency selection characteristic of the filter and the power distribution/synthesis characteristic of the power divider, so that the circuit size can be reduced, the processing cost can be reduced, the insertion loss can be reduced, the trend of modern integrated circuit development is met, and the filter and the power divider are widely applied to a radio frequency front-end system.
Substrate Integrated Waveguide (SIW) is a structure similar to a metal Waveguide formed by covering metal layers on the upper layer and the lower layer of a dielectric Substrate and arranging metal through holes at the periphery in an equal period, a microwave millimeter wave device formed by the SIW has the advantages of high power capacity, low loss, small volume, easiness in processing and integration, and in the design of the conventional SIW filtering power divider, the problems of narrow bandwidth or large insertion loss and the like mostly exist, and the performance of the SIW is reduced along with the increase of frequency.
Disclosure of Invention
The invention aims to provide a filtering power divider based on integrated substrate gap waveguide, which aims to solve the problems that the existing filtering power divider is narrow in bandwidth and not suitable for high frequency band.
In order to achieve the purpose, the invention provides the following scheme:
a filtering power divider based on integrated substrate gap waveguide, comprising: sequentially overlapping and packaging an upper dielectric plate, a middle dielectric plate and a lower dielectric plate;
the upper surface of the upper dielectric plate is provided with a first metal layer, the first metal layer is provided with a gap, the gap is used for adding an isolation resistor on the packaged filtering power divider based on the integrated substrate gap waveguide, and the isolation degree of two output ports in the filtering power divider based on the integrated substrate gap waveguide is adjusted by adjusting the position and the size of the gap; the position of the gap is positioned right above a fifth branch microstrip line of the microstrip line unit in the filtering power dividing circuit structure;
the filtering power dividing circuit structure is printed on the lower surface of the upper dielectric plate; the filtering power dividing circuit structure comprises a microstrip line unit and a step impedance transformation structure; the step impedance transformation structure is arranged on a sixth branch microstrip line in the microstrip line unit; and adjusting the length of the branch of the step impedance transformation microstrip line in the step impedance transformation structure so as to adjust the position of the transmission zero point and the passband bandwidth of the filtering power divider based on the integrated substrate gap waveguide.
Optionally, the microstrip line unit specifically includes: the microstrip line comprises a first stub microstrip line, a second stub microstrip line, a third stub microstrip line, a fourth stub microstrip line, a fifth stub microstrip line and a sixth stub microstrip line;
cutting off two first right-angle triangles and one isosceles triangle; the two first right-angle triangles are respectively positioned at the connecting positions of the first stub microstrip line and the third stub microstrip line, and the connecting position of the second stub microstrip line and the fourth stub microstrip line; the isosceles triangle is positioned at the connection part of the third, fourth and fifth minor microstrip lines;
and a second right-angle triangle is respectively filled at the discontinuous connection part of the fifth branch microstrip line and the sixth branch microstrip line.
Optionally, the width and the length of the fifth stub microstrip line are adjusted to adjust matching of the third stub microstrip line, the fourth stub microstrip line and the sixth stub microstrip line;
and adjusting the sizes of the first right triangle and the second right triangle to adjust the matching of the filtering power divider based on the integrated substrate gap waveguide.
Optionally, the length of the fifth stub microstrip line is 1/4 wavelengths of the integrated substrate gap waveguide.
Optionally, the first stub microstrip line is a first output port, the second stub microstrip line is a second output port, and the sixth stub microstrip line is an input port; the first output port and the second output port are equal-amplitude in-phase output ports.
Optionally, the first output port and the second output port are respectively connected to one microstrip line unit, and a gap is arranged right above a fifth stub microstrip line on each microstrip line unit.
Optionally, the stepped impedance transformation structure specifically includes: three step impedance transformation microstrip lines with the same structure;
the step impedance transformation microstrip line comprises a first branch and a second branch; the first branch knot is connected with the second branch knot; adjusting the lengths of the first branch and the second branch to adjust the position of a transmission zero point, the position of a resonance point in a passband and the bandwidth of the passband of the filtering power divider based on the integrated substrate gap waveguide; and adjusting the widths of the first branch and the second branch and adjusting the position of a transmission zero point of the filtering power divider based on the integrated substrate gap waveguide.
Optionally, a second metal layer is arranged on the upper surface of the lower dielectric plate;
an electromagnetic band gap periodic structure is arranged on the second metal layer; the electromagnetic band gap periodic structure comprises periodic metal through holes and metal circular patches; the periodic metal via hole is formed in the second metal layer, and the metal circular patch is arranged on the periodic metal via hole; the second metal layer and the electromagnetic band gap periodic structure form an ideal magnetic conductor.
Optionally, the upper dielectric plate, the middle dielectric plate and the lower dielectric plate all adopt dielectric plates with the same size; the dielectric constant of the dielectric plate is 2.2, and the loss tangent is 0.0009; the middle-layer dielectric plate is the thinnest, and the lower-layer dielectric plate is the thickest;
the upper dielectric plate, the middle dielectric plate and the lower dielectric plate are fixed together through bonding or plastic screws.
Optionally, the slot is a scoop-shaped slot; the spoon-shaped gap comprises a spoon head gap and a spoon handle gap; the isolation resistor is arranged between the gap of the spoon head part and the gap of the spoon handle part; the gap of the spoon head part is an oval gap or a rectangular gap, and the gap of the spoon handle part is a rectangular gap.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects: the invention provides a filtering power divider based on integrated substrate gap waveguide, which adjusts the isolation of two output ports by adjusting the size and the position of a gap on a first metal layer on an upper dielectric slab without influencing the passband bandwidth, the center frequency and the out-of-band rejection, thereby realizing higher isolation; the position of a transmission zero point and the passband bandwidth of the filtering power divider based on the integrated substrate gap waveguide are adjusted by adjusting the length of the branch of the stepped impedance transformation microstrip line in the stepped impedance transformation structure without influencing the central frequency and the isolation degree of the filtering power divider so as to obtain wider bandwidth, so that the filtering power divider based on the integrated substrate gap waveguide is suitable for higher frequency bands.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is an overall structural diagram of a filtering power divider based on an integrated substrate gap waveguide according to an embodiment of the present invention;
FIG. 2 is a schematic bottom view of an upper dielectric plate of the integrated substrate gap waveguide-based filtering power divider shown in FIG. 1;
FIG. 3 is a schematic top view of an upper dielectric plate of the integrated substrate gap waveguide-based filtering power divider shown in FIG. 1;
FIG. 4 is a schematic bottom view of the lower dielectric plate of the integrated substrate gap waveguide-based filtering power divider shown in FIG. 1;
FIG. 5 is a schematic top view of a lower dielectric plate of the integrated substrate gap waveguide-based filtering power divider shown in FIG. 1;
FIG. 6 is a diagram of the simulation results of the S-parameters of the integrated substrate gap waveguide-based filtering power divider shown in FIG. 1;
fig. 7 is an overall structural diagram of a filtering power divider based on an integrated substrate gap waveguide according to a second embodiment of the present invention; (difference lies in changing the gap)
FIG. 8 is a schematic bottom view of the upper dielectric plate of the integrated substrate gap waveguide based filter power splitter shown in FIG. 7;
FIG. 9 is a schematic top view of the upper dielectric plate of the integrated substrate gap waveguide based filter power splitter of FIG. 7;
fig. 10 is a diagram showing simulation results of S-parameters of the integrated substrate gap waveguide-based filtering power divider shown in fig. 7;
fig. 11 is an overall structural diagram of a filtering power divider based on an integrated substrate gap waveguide according to a third embodiment of the present invention; (difference is in the step impedance)
Fig. 12 is a schematic bottom view of the upper dielectric plate of the integrated substrate gap waveguide-based filtering power divider shown in fig. 11;
fig. 13 is a schematic top view of the upper dielectric plate of the integrated substrate gap waveguide-based filtering power divider shown in fig. 11;
fig. 14 is a schematic bottom view of the lower dielectric plate of the integrated substrate gap waveguide based filter power splitter shown in fig. 11;
FIG. 15 is a schematic top view of the lower dielectric plate of the integrated substrate gap waveguide based filter power splitter of FIG. 11;
fig. 16 is a diagram showing simulation results of S-parameters of the integrated substrate gap waveguide-based filtering power divider shown in fig. 11;
fig. 17 is an overall structural diagram of a filtering power divider based on an integrated substrate gap waveguide according to a fourth embodiment of the present invention; (difference lies in four points)
Fig. 18 is a schematic bottom view of the upper dielectric plate of the integrated substrate gap waveguide based filter power splitter of fig. 17;
fig. 19 is a schematic top view of the upper dielectric plate of the integrated substrate gap waveguide based filter power splitter of fig. 17;
fig. 20 is a schematic bottom view of the lower dielectric plate of the integrated substrate gap waveguide based filter power splitter of fig. 17;
FIG. 21 is a schematic top view of the lower dielectric plate of the integrated substrate gap waveguide based filter power splitter of FIG. 17;
fig. 22 is a graph showing simulation results of the S-parameters of the integrated substrate gap waveguide-based filtering power divider shown in fig. 17.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a filtering power divider based on integrated substrate gap waveguide, which can obtain wider bandwidth and enables the filtering power divider based on the integrated substrate gap waveguide to adapt to higher frequency band.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
During the development process, the inventor finds that an Integrated Substrate Gap Waveguide (ISGW) is divided into two structures, namely a ridged ISGW and a microstrip ISGW. The ISGW with the ridge generally comprises two layers of PCBs, the outer side surface of the upper layer of PCB is fully coated with copper to form an ideal electric conductor (PEC), the lower layer of PCB is printed with a microstrip line, the microstrip line is provided with a series of metalized via holes and is connected with a lower metal ground to form a ridge-like structure, periodic mushroom structures are arranged on two sides of the microstrip line to form an ideal magnetic conductor (PMC), an electromagnetic band gap structure EBG is formed between the PEC and the PMC, electromagnetic wave quasi-TEM wave can only propagate along the microstrip line, but the microstrip line in the ISGW with the ridge is limited by the mushroom structures and is inconvenient to route due to the fact that the microstrip line and the mushroom structures are located on the same layer of PCB. Microstrip ISGW comprises three-layer PCB board, the outside of upper PCB board covers copper formation PEC entirely, the inboard microstrip line that then prints, all print mushroom-shaped periodic structure in order to constitute PMC on the bottom PCB board, insert a middle dielectric plate and cut off upper strata and lower floor between upper strata and lower floor, compare in the ISGW of taking the spine convenient design more and walk the line, compare in Gap Waveguide (Gap Waveguide, GW) simultaneously, GW has realized more stable clearance, possess higher performance. The ISGW can be used for packaging a microwave circuit, effectively inhibits space radiation and surface waves, and has the characteristics of simple manufacture, low loss, stable structure, good transmission performance and wider working bandwidth. Therefore, based on the integrated substrate gap waveguide, a filtering power divider based on the integrated substrate gap waveguide is established, which comprises: and the upper dielectric plate, the middle dielectric plate and the lower dielectric plate are sequentially stacked and packaged.
The upper surface of the upper dielectric plate is provided with a first metal layer, the first metal layer is provided with a gap, the gap is used for adding an isolation resistor on the packaged integrated substrate gap waveguide-based filter power divider, and the position and the size of the gap are adjusted to adjust the isolation of two output ports in the integrated substrate gap waveguide-based filter power divider without influencing the passband bandwidth, the central frequency and the out-of-band rejection; the position of the gap is positioned right above the fifth branch microstrip line of the microstrip line unit in the filtering power dividing circuit structure.
The filtering power dividing circuit structure is printed on the lower surface of the upper dielectric plate; the filtering power dividing circuit structure comprises a microstrip line unit and a step impedance transformation structure; the step impedance transformation structure is arranged on a sixth branch microstrip line in the microstrip line unit; and adjusting the length of the branch of the stepped impedance transformation microstrip line in the stepped impedance transformation structure so as to adjust the position of the transmission zero point and the passband bandwidth of the filtering power divider based on the integrated substrate gap waveguide without influencing the central frequency and the isolation degree of the filtering power divider.
In practical application, the microstrip line unit specifically includes: the microstrip line comprises a first stub microstrip line, a second stub microstrip line, a third stub microstrip line, a fourth stub microstrip line, a fifth stub microstrip line and a sixth stub microstrip line; cutting off two first right-angle triangles and one isosceles triangle; the two first right-angle triangles are respectively positioned at the connecting positions of the first stub microstrip line and the third stub microstrip line, and the connecting position of the second stub microstrip line and the fourth stub microstrip line; the isosceles triangle is positioned at the connection part of the third, fourth and fifth minor microstrip lines; and a second right-angle triangle is respectively filled at the discontinuous connection part of the fifth branch microstrip line and the sixth branch microstrip line.
In practical application, the width and the length of the fifth stub microstrip line are adjusted to adjust the matching among the third stub microstrip line, the fourth stub microstrip line and the sixth stub microstrip line without affecting the frequency range of a filter passband, the out-of-band transmission zero position and the isolation degree, and the matching is best when the length of the fifth stub microstrip line is 1/4 wavelengths of the integrated substrate gap waveguide ISGW; and adjusting the sizes of the first right triangle and the second right triangle to adjust the matching of the filtering power divider based on the integrated substrate gap waveguide without influencing the central frequency, the isolation degree, the passband frequency range and the out-of-band transmission zero position.
In practical application, the first stub microstrip line is a first output port, the second stub microstrip line is a second output port, and the sixth stub microstrip line is an input port; the first output port and the second output port are equal-amplitude in-phase output ports.
In practical application, the first output port and the second output port are respectively connected with one microstrip line unit, and a gap is arranged right above a fifth stub microstrip line on each microstrip line unit.
In practical application, the step impedance transformation structure specifically includes: three step impedance transformation microstrip lines with the same structure; the step impedance transformation microstrip line comprises a first branch and a second branch; the first branch knot is connected with the second branch knot; adjusting the lengths of the first branch and the second branch to adjust the position of a transmission zero point, the position of a resonance point in a passband and the bandwidth of the passband of the filtering power divider based on the integrated substrate gap waveguide without affecting the central frequency and the isolation of the filtering power divider; and adjusting the widths of the first branch and the second branch and the position of a transmission zero point of the filtering power divider based on the integrated substrate gap waveguide to achieve better out-of-band rejection without influencing the central frequency, the passband bandwidth and the isolation.
In practical application, a second metal layer is arranged on the upper surface of the lower dielectric plate; an electromagnetic band gap periodic structure is arranged on the second metal layer; the electromagnetic band gap periodic structure comprises periodic metal through holes and metal circular patches; the periodic metal via hole is formed in the second metal layer, and the metal circular patch is arranged on the periodic metal via hole; the second metal layer and the electromagnetic band gap periodic structure form an ideal magnetic conductor, so that the packaging of the filtering power divider is realized, the space radiation loss is effectively reduced, the plane wave is restrained, and the problem of space resonance is solved.
In practical application, the upper dielectric plate, the middle dielectric plate and the lower dielectric plate all adopt dielectric plates with the same size; the dielectric constant of the dielectric plate is 2.2, and the loss tangent is 0.0009; the middle-layer dielectric plate is the thinnest, and the lower-layer dielectric plate is the thickest; the upper dielectric plate, the middle dielectric plate and the lower dielectric plate are fixed together through bonding or plastic screws.
In practical application, the gap is a spoon-shaped gap; the spoon-shaped gap comprises a spoon head gap and a spoon handle gap; the isolation resistor is arranged between the gap of the spoon head part and the gap of the spoon handle part; the gap of the spoon head part is an oval gap or a rectangular gap, and the gap of the spoon handle part is a rectangular gap.
The filtering power divider based on the integrated substrate gap waveguide provided by the present invention is further described in the following with different embodiments.
Example one
In a first embodiment of the present invention, as shown in fig. 1 to 6, a filtering power divider based on an integrated substrate gap waveguide includes an electromagnetic band gap structure for shielding electromagnetic radiation energy, a filtering power dividing circuit structure for transmitting energy, an upper dielectric plate 1, a lower dielectric plate 3, and an intermediate dielectric plate 2 located between the upper and lower dielectric plates and playing a role in spacing, where the electromagnetic band gap structure is located on the lower dielectric plate 3, a gap 7 designed by adding an isolation resistor is located on a first metal layer 4 on the upper surface of the upper dielectric plate 1, the filtering power dividing circuit structure is formed by cascading a filtering circuit and a power dividing circuit, and a total microstrip line 6 formed by the circuit is located on the lower surface of the upper dielectric plate 1. The filter circuit is a stepped impedance transformation structure, and the power dividing circuit is a microstrip line unit.
In the embodiment, a first metal layer 4 is printed on the upper surface of the upper-layer dielectric slab 1, a wooden spoon-shaped gap 7 is formed in the first metal layer 4, the wooden spoon-shaped gap 7 is composed of an oval gap 7-1 and a rectangular gap 7-3, and an isolation resistor 7-2 can be externally connected to the wooden spoon-shaped gap 7; the lower surface of the upper dielectric slab 1 is printed with a total microstrip line 6; the total microstrip line 6 is a multi-section impedance transformation microstrip transmission line structure and is formed by connecting nine sections of rectangular microstrip lines (a1, a2, a3, a4, a5, a6, 15, 16 and 17); a first right-angle triangle (b1, b2) is cut at the joint of the first branched microstrip line a1 and the third branched microstrip line a3 and at the joint of the second branched microstrip line a2 and the fourth branched microstrip line a 4; an isosceles triangle b5 is cut at the connection position of the third branched microstrip line a3, the fourth branched microstrip line a4 and the fifth branched microstrip line a 5; a second right-angled triangle (b3, b4) is supplemented at the discontinuous connection part of the microstrip line a5 and the microstrip line a 6; the two sides of the microstrip line a6 are connected with three stepped impedance transformation microstrip lines (15, 16, 17) which are mutually separated by a quarter wavelength, the stepped impedance transformation microstrip lines (15, 16, 17) are composed of two branches, the first branch of the stepped impedance transformation microstrip line 15 is 15-1, and the second branch is 15-2; the first branch of the stepped impedance transformation microstrip line 16 is 16-1, and the second branch is 16-2; the first branch of the stepped impedance transformation microstrip line 17 is 17-1, and the second branch is 17-2.
In this embodiment, the port 8 is an input port, and the first output port 9 and the second output port 10 are equal-amplitude in-phase output ports.
In this embodiment, the middle dielectric plate 2 is used to separate the upper dielectric plate 1 from the lower dielectric plate 3, and meanwhile, facilitates the wiring of microstrip lines, and the three dielectric plates can be fixed together by bonding or plastic screws.
In the embodiment, the lower surface of the lower dielectric plate 3 is printed with the second metal layer 5, and a mushroom-shaped electromagnetic band gap periodic structure 11 is embedded inside the lower dielectric plate 3 and consists of periodic metal via holes 12 and a metal circular patch 13.
The filtering power divider based on the integrated substrate gap waveguide of the embodiment has the following characteristics in practical application:
the isolation between the output ports of the filtering power divider can be adjusted by changing the size and the position of the gap 7 to achieve the best effect without influencing the passband bandwidth, the center frequency and the out-of-band rejection; the matching of the filtering power divider can be adjusted by adjusting the lengths and the widths of the branch microstrip lines a1, a2, a3, a4, a5, a6 and the transition sections triangles b1, b2, b3, b4 and b5 without influencing the center frequency, the isolation degree, the passband frequency range and the out-of-band transmission zero point position; the position of a transmission zero point of the filtering power divider, the position of a resonance point in a passband and the bandwidth of the passband can be adjusted by changing the electrical lengths of the first branch and the second branch of the stepped impedance transformation microstrip line without influencing the central frequency and the isolation degree of the filtering power divider; the positions of transmission zero points of the filtering power divider can be adjusted by changing the impedance ratios K1, K2 and K3 of the first branch and the second branch in the stepped impedance change microstrip line, so that better out-of-band rejection is achieved without influencing the central frequency, the passband bandwidth and the isolation.
In the embodiment, the upper dielectric plate 1, the middle dielectric plate 2 and the lower dielectric plate 3 are all made of Rogers5880 plates, and the thicknesses are 0.508mm, 0.254mm and 0.787mm respectively; the results shown in fig. 6 indicate that the center frequency of the filter power divider of this embodiment is 26.5GHz, the operating bandwidth is 23.7-29.2GHz, the transmission zeros are respectively located at 22.4GHz, 23.5GHz, 29.6GHz, and 31GHz, the insertion loss in the transmission passband is 0.7dB, and the isolation is greater than 18.5 dB.
Example two
As shown in fig. 7 to 10, the integrated substrate gap waveguide-based filter power divider of the second embodiment has similar technical features to the integrated substrate gap waveguide-based filter power divider of the first embodiment, and is identical in terms of configuration and size; the difference is that the shape of the gap 7 of the first metal layer 4 on the upper surface of the upper dielectric plate 1 is different. The slot 7 of the integrated substrate gap waveguide-based filter power divider in the first embodiment is composed of an elliptical slot 7-1 and a rectangular slot 7-3, and the slot 7 of the integrated substrate gap waveguide-based filter power divider in the second embodiment is composed of two rectangular slots 7-1 and 7-3.
The filtering power divider based on the integrated substrate gap waveguide of the embodiment has the following characteristics in practical application:
the shape and size of the gap 7 can be changed according to the actual application requirements, so that an isolation resistor is added in a packaging device, the isolation degree between output ports of the filtering power divider is improved, the embodiment is compared with the embodiment I, the shape and size of the gap 7 are different, but under the condition that the equivalent slotting requirement of a Q-TEM transmission mode is met, similar isolation effects can be obtained by externally connecting the isolation resistors 7-2 on different gap sizes 7, and the passband bandwidth, the central frequency and the transmission zero point are not influenced.
The simulation result of the filtering power divider based on the integrated substrate gap waveguide of this embodiment is shown in fig. 10, where the center frequency of the filtering power divider of this embodiment is 26.5GHz, the operating bandwidth is 23.7-29.2GHz, the transmission zeros are respectively located at 22.4GHz, 23.4GHz, 29.6GHz, and 31GHz, the insertion loss in the transmission passband is 0.7dB, and the isolation is greater than 15 dB.
EXAMPLE III
As shown in fig. 11 to 16, the third embodiment of the power divider based on the integrated substrate gap waveguide has the same technical features as the first embodiment of the power divider based on the integrated substrate gap waveguide, except that the ratio of the electrical length and the step impedance of three step impedance transformation microstrip lines connected to two sides of the stub microstrip line a6, that is, the length and the width of the first stub and the second stub (15-1, 15-2, 16-1, 16-2, 17-1, 17-2) are changed, so that the power divider based on the integrated substrate gap waveguide has smaller size than the first embodiment of the power divider based on the integrated substrate gap waveguide.
The filtering power divider based on the integrated substrate gap waveguide of the embodiment has the following characteristics in practical application:
according to the actual application requirements, the position of a transmission zero point, the position of a resonance point in a passband and the bandwidth of the passband of the filtering power divider are adjusted by changing the electrical length of a first branch and a second branch (15-1, 15-2, 16-1, 16-2, 17-1, 17-2) in the stepped impedance transformation microstrip line, when the electrical length is increased, the transmission zero point moves to low frequency, and a resonance frequency point in the passband also moves to low frequency without influencing the central frequency and the isolation of the filtering power divider; the position of the transmission zero point of the filtering power divider can be adjusted by changing the impedance ratios K1, K2 and K3 of the first branch and the second branch of the stepped impedance change microstrip line so as to achieve better out-of-band rejection.
The simulation result of the filtering power divider based on the integrated substrate gap waveguide of this embodiment is shown in fig. 16, where the center frequency of the filtering power divider of this embodiment is 27GHz, the operating bandwidth is 24.3GHz-30.1GHz, the transmission zeros are respectively located at 22.8GHz, 23.6GHz, 30.4GHz, and 31.4GHz, the insertion loss in the transmission passband is 0.9dB, and the isolation is greater than 15 dB.
Example four
Fig. 17 to 22 show a fourth embodiment of the integrated substrate gap waveguide-based filter power divider according to the present invention. The integrated substrate gap waveguide-based filtering power splitter of the fourth embodiment has similar technical features to the integrated substrate gap waveguide-based filtering power splitter of the third embodiment, except that the integrated substrate gap waveguide-based filtering power splitter of the fourth embodiment has 4 output ports 9, 10, 11, 12, has more slots (7a, 7b), more stub microstrip lines (a1-1, a1-2, a2-1, a2-2, a3-1, a3-2, a4-1, a4-2, a5-1, a5-2) and a triangle (b1-1, b1-2, b2-1, b2-2, b3-1, b3-2, b4-1, b4-2) or a cut triangle (b5-1, b5-2), constituting the filter power divider of the four-power-division integrated substrate gap waveguide of the present embodiment.
The filtering power divider based on the integrated substrate gap waveguide of the embodiment has the following characteristics in practical application:
the length and the width of the added branch microstrip line are changed, and the size of a triangle is supplemented or cut off at the transition section, so that the matching of the filtering power divider is adjusted; more branch microstrip lines (a1-X, a2-X, a3-X, a4-X, a5-X, X is 1,2, …, N and N are positive integers) and triangles (b1-X, b2-X, b3-X and b4-X) supplemented with transition sections thereof or cut triangles (b5-X) can be added according to the actual application requirements, and 2 is carried out based on the design methodn×3nThe design of the filter power divider with (n ═ 1, 2., n) power dividing ports does not affect the center frequency and the passband bandwidth although the power dividing ports are added; the resonance frequency point in the passband and the transmission zero point outside the passband can be adjusted by adjusting the ratio of the electrical length and the stepped impedance of the three stepped impedance transformation microstrip lines connected to the two sides of the microstrip line a6 without affecting the center frequency, the passband bandwidth and the isolation; the isolation between the output ports can be adjusted without affecting the center frequency, the pass band width and the transmission zero by adjusting the shape, size and position of the slits 7, 7a and 7 b.
The simulation result of the filtering power divider based on the integrated substrate gap waveguide of this embodiment is shown in fig. 22, where the center frequency of the filtering power divider of this embodiment is 27GHz, the operating bandwidth is 24.2GHz-29.9GHz, the transmission zeros are respectively located at 23.5GHz and 29.9GHz, and the insertion loss in the transmission passband is 0.9 dB.
The invention solves the problem of large radiation loss in the traditional microstrip filtering power divider; the problem of unstable gap structure of the gap waveguide filter power divider is solved; compared with a substrate integrated waveguide filter power divider, the waveguide filter power divider has wider bandwidth and lower loss, and is more suitable for high frequency bands; the device has the characteristics of stable structure, easy integration, easy processing, good interference resistance and the like; the passband and the transmission zero can be adjusted by adjusting the stepped impedance transformation structure, so that a wider bandwidth is obtained, and better frequency selectivity is achieved; the isolation of the two output ports can be adjusted by adjusting the size and the position of the gap of the metal layer on the upper surface of the upper dielectric plate, so that high isolation is realized.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (10)
1. A filter power divider based on integrated substrate gap waveguides, comprising: sequentially overlapping and packaging an upper dielectric plate, a middle dielectric plate and a lower dielectric plate;
the upper surface of the upper dielectric plate is provided with a first metal layer, the first metal layer is provided with a gap, the gap is used for adding an isolation resistor on the packaged filtering power divider based on the integrated substrate gap waveguide, and the isolation degree of two output ports in the filtering power divider based on the integrated substrate gap waveguide is adjusted by adjusting the position and the size of the gap; the position of the gap is positioned right above a fifth branch microstrip line of the microstrip line unit in the filtering power dividing circuit structure;
the filtering power dividing circuit structure is printed on the lower surface of the upper dielectric plate; the filtering power dividing circuit structure comprises a microstrip line unit and a step impedance transformation structure; the step impedance transformation structure is arranged on a sixth branch microstrip line in the microstrip line unit; and adjusting the length of the branch of the step impedance transformation microstrip line in the step impedance transformation structure so as to adjust the position of the transmission zero point and the passband bandwidth of the filtering power divider based on the integrated substrate gap waveguide.
2. The integrated substrate gap waveguide-based filtering power divider according to claim 1, wherein the microstrip line unit specifically comprises: the microstrip line comprises a first stub microstrip line, a second stub microstrip line, a third stub microstrip line, a fourth stub microstrip line, a fifth stub microstrip line and a sixth stub microstrip line;
cutting off two first right-angle triangles and one isosceles triangle; the two first right-angle triangles are respectively positioned at the connecting positions of the first stub microstrip line and the third stub microstrip line, and the connecting position of the second stub microstrip line and the fourth stub microstrip line; the isosceles triangle is positioned at the connection part of the third, fourth and fifth minor microstrip lines;
and a second right-angle triangle is respectively filled at the discontinuous connection part of the fifth branch microstrip line and the sixth branch microstrip line.
3. The integrated substrate gap waveguide-based filtering power divider of claim 2, wherein the width and length of the fifth stub microstrip line are adjusted to adjust the matching of the third stub microstrip line, the fourth stub microstrip line and the sixth stub microstrip line;
and adjusting the sizes of the first right triangle and the second right triangle to adjust the matching of the filtering power divider based on the integrated substrate gap waveguide.
4. The integrated substrate gap waveguide-based filtering power divider according to claim 3, wherein the length of the fifth stub microstrip line is 1/4 wavelengths of the integrated substrate gap waveguide.
5. The integrated substrate gap waveguide-based filtering power divider according to claim 4, wherein the first stub microstrip line is a first output port, the second stub microstrip line is a second output port, and the sixth stub microstrip line is an input port; the first output port and the second output port are equal-amplitude in-phase output ports.
6. The integrated substrate gap waveguide-based filtering power divider according to claim 5, wherein the first output port and the second output port are respectively connected with one microstrip line unit, and a gap is arranged right above a fifth stub microstrip line on each microstrip line unit.
7. The integrated substrate gap waveguide-based filtering power divider according to claim 1, wherein the stepped impedance transformation structure specifically comprises: three step impedance transformation microstrip lines with the same structure;
the step impedance transformation microstrip line comprises a first branch and a second branch; the first branch knot is connected with the second branch knot; adjusting the lengths of the first branch and the second branch to adjust the position of a transmission zero point, the position of a resonance point in a passband and the bandwidth of the passband of the filtering power divider based on the integrated substrate gap waveguide; and adjusting the widths of the first branch and the second branch and adjusting the position of a transmission zero point of the filtering power divider based on the integrated substrate gap waveguide.
8. The integrated substrate gap waveguide-based filter power divider according to any one of claims 1-7, wherein the upper surface of the lower dielectric plate is provided with a second metal layer;
an electromagnetic band gap periodic structure is arranged on the second metal layer; the electromagnetic band gap periodic structure comprises periodic metal through holes and metal circular patches; the periodic metal via hole is formed in the second metal layer, and the metal circular patch is arranged on the periodic metal via hole; the second metal layer and the electromagnetic band gap periodic structure form an ideal magnetic conductor.
9. The integrated substrate gap waveguide-based filtering power divider according to claim 8, wherein the upper dielectric plate, the middle dielectric plate and the lower dielectric plate are dielectric plates with the same size; the dielectric constant of the dielectric plate is 2.2, and the loss tangent is 0.0009; the middle-layer dielectric plate is the thinnest, and the lower-layer dielectric plate is the thickest;
the upper dielectric plate, the middle dielectric plate and the lower dielectric plate are fixed together through bonding or plastic screws.
10. The integrated substrate gap waveguide-based filtering power divider of claim 9, wherein the slot is a scoop-shaped slot; the spoon-shaped gap comprises a spoon head gap and a spoon handle gap; the isolation resistor is arranged between the gap of the spoon head part and the gap of the spoon handle part; the gap of the spoon head part is an oval gap or a rectangular gap, and the gap of the spoon handle part is a rectangular gap.
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| CN116759779B (en) * | 2023-08-22 | 2023-11-10 | 安徽蓝讯通信科技有限公司 | 5G millimeter wave filtering power division module |
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