CN108493534A - A kind of four mould chip integrated waveguide broad-band filters - Google Patents
A kind of four mould chip integrated waveguide broad-band filters Download PDFInfo
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- CN108493534A CN108493534A CN201810073208.4A CN201810073208A CN108493534A CN 108493534 A CN108493534 A CN 108493534A CN 201810073208 A CN201810073208 A CN 201810073208A CN 108493534 A CN108493534 A CN 108493534A
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- metal patch
- upper layer
- layer metal
- integrated waveguide
- rectangular aperture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
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Abstract
The present invention proposes a kind of four mould chip integrated waveguide broad-band filters, mainly solves the problems, such as that substrate integrated waveguide single chamber multimode realizes filter bandwidht broadening.It includes medium substrate, lower metal patch, upper layer metal patch, the first plated-through hole, the second plated-through hole, etching rectangular aperture structure, metalized blind vias and microstrip feed line.On the substrate integration wave-guide bimodulus resonant cavity basis diagonally with the second metallized through-hole infinitesimal disturbance, realize that fundamental frequencies increase by etching rectangular aperture structure in upper layer metal patch, and increase by four metalized blind vias in rectangular aperture structure periphery and realize that mould mode frequency reduces three times, to realize that four mode frequencies are close.And coupled outside is realized by microstrip-fed mode, realize a kind of design of four moulds chip integrated waveguide broad-band filter.The present invention realizes the broadened bandwidth of filter, while improving the selection characteristic of filter passband, can be applied to Radio-Frequency Wireless Communication system.
Description
Technical field
The invention belongs to microwave technical fields, are related to a kind of substrate integral wave guide filter, and in particular to a kind of four mould bases
Piece integrated waveguide broad-band filter, can be used for wireless communication system radio-frequency front-end.
Background technology
In modern microwave wireless communication system, the passive devices such as filter and duplexer have highly important effect.
Traditional microwave and millimeter wave filter generally use waveguide or microstrip transmission line structure, but their own has and is difficult to overcome
Disadvantage.For the planar structures filter such as micro-strip or strip line, although they have it is small, it is light-weight, be easy to and plate grade electricity
The shortcomings that integrated advantage in road, but that there are power capacities is low, loss is big and semi-open structure brings electromagnetic compatibility problem；And
For metal waveguide class filter, although high power capacity can be realized, low insertion loss is had excellent performance, processing cost
It is higher and bulky unsuitable integrated with modern microwave planar circuit.Substrate integration wave-guide passes through periodical metal throuth hole reality
Class waveguiding structure is showed, has both inherited the good characteristics such as conventional waveguide device high quality factor and high power capacity, also retained
General plane line filter is easy to process, low cost and the advantages of be easily integrated, and is widely used in designing various microwaves
With millimetric wave device.
The hot spot that microwave filter is Recent study is designed using the bimodulus resonant theory of degenerate mode, by
Perturbation unit is added in resonant cavity makes a pair of of degenerate mode of resonant cavity detach, to realize the design of dual mode filter.It can
To effectively reduce the size of filter, and there is good frequency selectivity.Use bimodulus Resonator design bandpass filtering
Device must be cascaded by multistage bimodulus resonant cavity and realize filter bandwidht broadening, certainly will will increase the volume of filter entirety.Multimode
Resonator designs bandpass filter in the case where not increasing series, and identical index is realized with less resonant element, to
Meet the miniature requirement of Modern communications terminals, multimode resonator is by the higher and higher attention of lot of domestic and foreign scholar, multimode
Resonator mechanism is applied to substrate integral wave guide filter and studies and design with far reaching significance.
For example, 2017, Chen Weidong et al. is in IEEE Microwave and Wireless Components
" Miniaturized Dual-Band Filter have been delivered on Letters periodicals (Vol.27No.7pp.344-346,2017)
A kind of Using Dual-Capacitively Loaded SIW Cavities ", it is proposed that substrate collection based on capacitive-loaded
At waveguide double-passband filter, but since higher modes harmonic wave occurs in the second near pass-band, the choosing at filter high-frequency outside band
It is unexcellent to select characteristic, and since each passband is constituted only with two patterns, the relative bandwidth of filter also compares
It is narrow.
Invention content
It is an object of the invention in view of the above shortcomings of the prior art, propose a kind of four mould chip integrated waveguide broad-bands filter
Wave device, realizes the broadening of filter passband bandwidth, while improving the stopband characteristic of filter.
The present invention technical thought be：In the substrate integration wave-guide bimodulus resonant cavity base for diagonally carrying metallized through-hole infinitesimal disturbance
It on plinth, is increased by etching rectangular configuration optimized integration mode resonance frequency in upper layer metal patch, and in etching rectangular configuration
Surrounding increases by four metalized blind vias and realizes that mould mode frequency reduces three times, to which four mode frequencies of realization are close.And pass through
Microstrip-fed mode realizes coupled outside, constitutes a kind of four mould chip integrated waveguide broad-band filters.
According to above-mentioned technical thought, realize that the technical solution that the object of the invention is taken is：
A kind of four mould chip integrated waveguide broad-band filters, including medium substrate 1；
The shape of the medium substrate 1 is rectangle, and the lower surface of the medium substrate 1 is printed with lower metal patch 2, upper table
Face is printed with the upper layer metal patch 3 of square；The upper layer metal patch 3 be located at medium substrate 1 in the width direction on two
A microstrip feed line 8 is respectively connected on opposite side, input terminal and output end as filter；The four of the upper layer metal patch 3
Week is connect by being entered multiple first plated-through holes 4 at end and output end partition with lower metal patch 2, forms substrate collection
At waveguide resonant cavity, respectively setting one is golden with lower layer by subapical position for any one diagonal line of the upper layer metal patch 3
Belong to the second plated-through hole 5 that patch 2 connects, for realizing the secondary degenerate mode state of substrate integration wave-guide resonant cavity；
The centre position of the upper layer metal patch 3 is etched with rectangular aperture structure 6, humorous for improving substrate integration wave-guide
Shake fundamental resonance frequencies of chamber；The lower surface of the medium substrate 1 is respectively set near 6 four edges of rectangular aperture structure
A metalized blind vias 7 is set, for reducing the mould resonant frequency three times of substrate integration wave-guide resonant cavity.
Preferably, the upper layer metal patch 3, the length of side are equal with the width dimensions of medium substrate 1.
Preferably, the rectangular aperture structure 6, the square overlapped with the center of upper layer metal patch 3 using center
Gap structure.
Preferably, the medium substrate 1, the gold that lower surface is nearby arranged close to the four edges of rectangular aperture structure 6
Categoryization blind hole 7, the center on side, the ruler of four metalized blind vias 7 where being located at 7 corresponding rectangular aperture of each metalized blind vias
It is very little identical, and apart from the equal sized of side where corresponding rectangular aperture.
Preferably, the microstrip feed line 8, is located at the centre position of 3 corresponding sides of upper layer metal patch.
Compared with prior art, the present invention haing the following advantages：
1. the present invention realizes that resonant cavity basic schema frequency increases using in upper layer metal patch etching rectangular configuration, improve
Filter passband low-frequency stop band characteristic.
2. the present invention is used increases metalized blind vias realization resonant cavity mould mode frequency three times around etching rectangular configuration
It reduces, improves filter passband high frequency stopband characteristic.
3. the present invention using resonant cavity basic schema frequency is improved, reduces resonant cavity mould mode frequency three times, to close
The bimodulus frequency of degeneracy, realizes the broadening of filter passband bandwidth.
Description of the drawings
Fig. 1 is the three dimensional structure diagram of the embodiment of the present invention 1；
Fig. 2 is the vertical view of Fig. 1；
Fig. 3 is the frequency response curve of the embodiment of the present invention 1.
Specific implementation mode
In the following with reference to the drawings and specific embodiments, invention is further described in detail：
Embodiment 1：
Referring to Figures 1 and 2, the present invention includes medium substrate 1, lower metal patch 2, upper layer metal patch 3, the first metal
Change through-hole 4, the second plated-through hole 5, rectangular aperture structure 6, metalized blind vias 7 and microstrip feed line 8；Wherein：
The medium substrate 1 is using 5880 planks of Rogers RT/duroid, relative dielectric constant εr=2.2, thickness H
=1 long L=18.4 wide W=10.4；
The lower metal patch 2 is printed on the lower surface of medium substrate 1, as metal floor, the upper layer metal patch
Piece 3 is printed on the upper surface of medium substrate 1, and lower metal patch 2 is all made of the silver-plated form of copper with upper layer metal patch 3, wherein
2 long L=18.4 wide W=10.4 of lower metal patch, upper layer metal patch 3 use square structure, and its side length is a, a=
10.4；
The surrounding of the upper layer metal patch 3 by be entered end and output end partition multiple first plated-through holes 4
It is connect with lower metal patch 2, forms substrate integration wave-guide resonant cavity, wherein the radius of the first plated-through hole 4 is r, r=
0.3, spacing d, d=0.8；
Second plated-through hole 5, any one diagonal line for being located at upper layer metal patch 3 lean on subapical position,
It is operated in TE for realizing substrate integration wave-guide resonant cavity102And TE201Degenerate mode state, wherein 5 radius of the second plated-through hole
For r0, r0=0.6, it is l, l=2 to angular vertex away from upper layer metal patch 3；
The rectangular aperture structure 6, for improving substrate integration wave-guide resonant cavity basic schema TE101Resonant frequency, mould
The degree of formula frequency shift is related with the size of rectangular aperture structure 6, and the present embodiment is using in center and upper layer metal patch 3
The square gap structure that the heart overlaps, its side length is S, S=5.9；
The center on side, wave is integrated for reducing substrate where the metalized blind vias 7 is located at corresponding rectangular aperture
Lead resonant cavity mould TE three times202Resonant frequency, mode frequency change degree and the size of metalized blind vias 7 it is related with position,
The size of four metalized blind vias 7 is identical, and apart from the equal sized of side where corresponding rectangular aperture, wherein metalized blind vias
7 radiuses are R0, R0=1.2, it is highly h, h=0.8, the distance to corresponding 6 place side of rectangular aperture structure is d0, d0=0.6；
The microstrip feed line 8 be located at medium substrate 1 in the width direction on two opposite side on, it is right with upper layer metal patch 3
It answers the centre position on side to connect, is since centre position can preferably motivate each mould of substrate integration wave-guide resonant cavity
Formula, input terminal and output end of the microstrip feed line 8 as filter, realizes the coupled outside of filter, the length of L0, L0=4,
Width is W0=3.1, W0For 50 ohm microstrip line widths；
The frequency response curve of the present embodiment filter is as shown in figure 3, S in Fig. 321It is bent for the transmission characteristic of filter
Line, S11For the coverage diagram of filter.The frequency distribution of four patterns can be clearly seen by Fig. 3, correspond to TE respectively101,
TE102, TE201, TE202The resonant frequency of pattern, realizes the broadening of filter passband bandwidth, while it is special to improve the selection outside band
Property.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, it is other it is any without departing from the spirit and principles of the present invention made by changes, modifications, substitutions, combinations, simplifications,
Equivalent substitute mode is should be, is included within the scope of the present invention.
Claims (5)
1. a kind of four mould chip integrated waveguide broad-band filters, including medium substrate (1)；
The shape of the medium substrate (1) is rectangle, and the lower surface of the medium substrate (1) is printed with lower metal patch (2), on
Surface is printed with the upper layer metal patch (3) of square；The upper layer metal patch (3) is located at along medium substrate (1) width side
A microstrip feed line (8), input terminal and output end as filter are respectively connected on two upward opposite side；The upper layer metal
The surrounding of patch (3) is by being entered multiple first plated-through holes (4) and the lower metal patch (2) at end and output end partition
Connection, forms substrate integration wave-guide resonant cavity, and any one diagonal line of the upper layer metal patch (3) is each by subapical position
One the second plated-through hole (5) being connect with lower metal patch (2) is set, for realizing substrate integration wave-guide resonant cavity
Secondary degenerate mode state；
It is characterized in that, the centre position of the upper layer metal patch (3) is etched with rectangular aperture structure (6), for improving base
Fundamental resonance frequencies of piece integrated wave guide resonance chamber；The lower surface of the medium substrate (1) is close to rectangular aperture structure (6)
Near four edges, a metalized blind vias (7) is respectively set, for reducing the resonance frequency of mould three times of substrate integration wave-guide resonant cavity
Rate.
2. a kind of four moulds chip integrated waveguide broad-band filter according to claim 1, which is characterized in that the upper layer gold
Belong to patch (3), the length of side is equal with the width dimensions of medium substrate (1).
3. a kind of four moulds chip integrated waveguide broad-band filter according to claim 1, which is characterized in that the rectangular slits
Gap structure (6), the square gap structure overlapped with the center of upper layer metal patch (3) using center.
4. a kind of four moulds chip integrated waveguide broad-band filter according to claim 1, which is characterized in that the medium base
It is blind to be located at each metallization for plate (1), the metalized blind vias (7) that lower surface is nearby arranged close to rectangular aperture structure (6) four edges
The center on side where the corresponding rectangular aperture in hole (7), the size of four metalized blind vias (7) is identical, and apart from corresponding
Side is equal sized where rectangular aperture.
5. a kind of four moulds chip integrated waveguide broad-band filter according to claim 1, which is characterized in that the micro-strip feedback
Line (8) is located at the centre position of upper layer metal patch (3) corresponding sides.
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| CN201810073208.4A CN108493534B (en) | 2018-01-25 | 2018-01-25 | A kind of four mould chip integrated waveguide broad-band filters |
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| CN201810073208.4A CN108493534B (en) | 2018-01-25 | 2018-01-25 | A kind of four mould chip integrated waveguide broad-band filters |
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| CN108493534B CN108493534B (en) | 2019-06-18 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110336100A (en) * | 2019-06-19 | 2019-10-15 | 华中科技大学 | A kind of air filling SIW double-passband filter and its optimization method |
| CN114400425A (en) * | 2021-12-29 | 2022-04-26 | 杭州电子科技大学 | Microwave and millimeter wave dual-band filtering cross junction |
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| CN105006613A (en) * | 2015-07-03 | 2015-10-28 | 中国矿业大学 | Quarter-module substrate integration waveguide band-pass filter with an ellipse defect structure |
| CN105048051A (en) * | 2015-07-08 | 2015-11-11 | 东南大学 | Tunable substrate integrated waveguide circular resonant cavity filter |
| CN206541917U (en) * | 2017-03-21 | 2017-10-03 | 成都信息工程大学 | A kind of substrate integration wave-guide millimeter wave filter of coated by dielectric |
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2018
- 2018-01-25 CN CN201810073208.4A patent/CN108493534B/en active Active
Patent Citations (3)
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|---|---|---|---|---|
| CN105006613A (en) * | 2015-07-03 | 2015-10-28 | 中国矿业大学 | Quarter-module substrate integration waveguide band-pass filter with an ellipse defect structure |
| CN105048051A (en) * | 2015-07-08 | 2015-11-11 | 东南大学 | Tunable substrate integrated waveguide circular resonant cavity filter |
| CN206541917U (en) * | 2017-03-21 | 2017-10-03 | 成都信息工程大学 | A kind of substrate integration wave-guide millimeter wave filter of coated by dielectric |
Non-Patent Citations (3)
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| FENGCHAO REN ET AL.: "Design and Implementation of an SIW Triple-mode Filter", 《2014 3RD ASIA-PACIFIC CONFERENCE ON ANTENNAS AND PROPAGATION》 * |
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| ZHENG LIU ET AL.: "Triple-Mode Bandpass Filters on CSRR-Loaded Substrate Integrated Waveguide Cavities", 《IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110336100A (en) * | 2019-06-19 | 2019-10-15 | 华中科技大学 | A kind of air filling SIW double-passband filter and its optimization method |
| CN114400425A (en) * | 2021-12-29 | 2022-04-26 | 杭州电子科技大学 | Microwave and millimeter wave dual-band filtering cross junction |
| CN114400425B (en) * | 2021-12-29 | 2023-02-03 | 杭州电子科技大学 | Microwave and millimeter wave dual-band filtering cross junction |
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| CN108493534B (en) | 2019-06-18 |
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