CN209747696U - Ultra-wideband ISGW band-pass filter - Google Patents
Ultra-wideband ISGW band-pass filter Download PDFInfo
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- CN209747696U CN209747696U CN201920655442.8U CN201920655442U CN209747696U CN 209747696 U CN209747696 U CN 209747696U CN 201920655442 U CN201920655442 U CN 201920655442U CN 209747696 U CN209747696 U CN 209747696U
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Abstract
The utility model discloses an ultra wide band ISGW band-pass filter, which comprises an upper dielectric slab, a lower dielectric slab and a spacing dielectric slab arranged between the upper dielectric slab and the lower dielectric slab; the upper surface of the upper dielectric plate is printed with a first metal layer, the lower surface of the upper dielectric plate is printed with a circular metal patch, the circular metal patch is provided with a first metal via hole to form an artificial magnetic conductor structure, the upper surface of the lower dielectric plate is printed with a second metal layer, the second metal layer is provided with two pairs of T-shaped gaps and two rectangular gaps, two ends of the second metal layer are respectively connected with a transition gradual change line and a feed microstrip line for realizing impedance matching, the lower surface of the lower dielectric plate is printed with a grounded third metal layer, and two sides and the middle of the second metal layer are respectively provided with a second metal via hole and a third metal via hole which are periodically. The utility model discloses can effectively restrain space radiation and plane wave to realize high integrated level and miniaturization.
Description
Technical Field
The utility model relates to a wave filter technical field especially relates to an ultra wide band ISGW band pass filter.
background
With the development of wireless communication technology and the increasing shortage of frequency spectrum resources, microwave band-pass filters are more and more emphasized. As wireless communication systems move toward higher performance, higher demands are placed on the performance of filters in the systems.
Substrate Integrated Waveguide (SIW) is a Waveguide-like structure composed of a dielectric Substrate, upper and lower metal surfaces, and metallized through holes, and has the excellent characteristics of small volume, low cost, easy processing and integration, which makes it widely used in the design of filters. In designing the SIW filter, forming the resonant cavity by slotting the upper and lower metal surfaces to form the stop band and placing the metallized through holes in the SIW structure are two important methods for designing the SIW filter. However, the method of forming slots in the upper and lower metal surfaces of the SIW structure is prone to radiation loss and plane wave problems. An Integrated Substrate Gap Waveguide (ISGW) proposed in recent years may be used to encapsulate a microwave circuit, effectively suppressing spatial radiation and surface waves, and has the characteristics of simple manufacture, low loss, stable structure, good transmission performance, and wider operating bandwidth.
However, the ISGW is not used to realize a self-packaged broadband bandpass filter in the prior art, and the current bandpass filter is prone to generate radiation loss and plane wave problems.
SUMMERY OF THE UTILITY MODEL
The utility model discloses the main technical problem who solves provides an ultra wide band ISGW band pass filter, can effectively restrain space radiation and plane wave to realize high integrated level and miniaturization.
In order to solve the technical problem, the utility model discloses a technical scheme be: the ultra-wideband ISGW band-pass filter comprises an upper dielectric slab (1), a lower dielectric slab (3) and a spacing dielectric slab (2) arranged between the upper dielectric slab (1) and the lower dielectric slab (3); the upper surface of the upper-layer dielectric slab (1) is printed with a first metal layer (11), three rows of first metal through holes (12) which are periodically arranged are formed in the upper-layer dielectric slab (1), two rows of circular metal patches (13) which are periodically arranged are printed on the lower surface of the upper-layer dielectric slab (1), the two rows of circular metal patches (13) are respectively connected with the first metal layer (11) through the two rows of first metal through holes (12) which are positioned on the outer side, and the arrangement direction of the first metal through holes (12) and the circular metal patches (13) is parallel to the Y axis in a three-dimensional reference coordinate system; the upper surface of the lower dielectric plate (3) is printed with a second metal layer (31), transition gradually-changing lines (32) connected with two sides of the second metal layer (31) and a feed microstrip line (33) connected with the transition gradually-changing lines (32), the lower surface of the lower dielectric plate (3) is printed with a third metal layer (34), the edges of two sides of the second metal layer (31) are provided with second metal via holes (35) which are periodically arranged, the middle part of the second metal layer (31) is provided with third metal via holes (36) which are periodically arranged, the arrangement directions of the second metal via holes (35) and the third metal via holes (36) are parallel to the Y axis, two pairs of T-shaped slots (37) which are arranged at intervals along the direction parallel to the Y axis are arranged on the second metal layer (31), and each pair of T-shaped slots (37) is symmetrical with respect to the arrangement direction of the third metal via holes (36), rectangular gaps (38) with the same shape are respectively arranged on two sides of the two pairs of T-shaped gaps (37) along the Y-axis direction; wherein the width of the transition gradual change line (32) is gradually increased from one side connected with the feed microstrip line (33) to the other side.
Preferably, the middle row of first metal vias (12) is located on a center line of the upper dielectric plate (1) in the Y-axis direction.
Preferably, the third metal via (36) is located on a center line of the second metal layer (31) in the Y-axis direction.
Preferably, the two rectangular slots (38) have a length of half the wavelength length of the waveguide.
Preferably, the dielectric constant of the upper dielectric plate (1) is higher than that of the spacing dielectric plate (2) and that of the lower dielectric plate (3), and the dielectric constants of the spacing dielectric plate (2) and that of the lower dielectric plate (3) are the same.
Preferably, the upper dielectric plate (1) is made of FR4 dielectric material with the dielectric constant of 4.6, the loss tangent of 0.02 and the thickness of 1.6mm, the spacing dielectric plate (2) is made of Rogers dielectric material with the dielectric constant of 3.36, the loss tangent of 0.0027 and the thickness of 0.304mm, and the lower dielectric plate (3) is made of Rogers dielectric material with the dielectric constant of 3.36, the loss tangent of 0.0027 and the thickness of 0.508 mm.
preferably, the upper dielectric plate (1), the lower dielectric plate (3) and the spacing dielectric plate (2) are bonded together or fixed together through screws.
Preferably, the thickness of the upper dielectric plate (1) is greater than that of the spacing dielectric plate (2), and the length and the width of the upper dielectric plate (1) are the same as those of the spacing dielectric plate (2).
Preferably, the width of the lower dielectric plate (3) is the same as the widths of the upper dielectric plate (1) and the spacing dielectric plate (2), and the length of the lower dielectric plate (3) is greater than the lengths of the upper dielectric plate (1) and the spacing dielectric plate (2) so as to expose the transition gradual change line (32) and the feed microstrip line (33).
Preferably, the width of the lower dielectric plate (3) is 14.6mm, and the length of the lower dielectric plate is 29.2 mm.
Be different from prior art's condition, the beneficial effects of the utility model are that: constitute ultra wide band ISGW band-pass filter through adopting three dielectric slabs, the upper dielectric slab has beaten the metal via hole of periodic arrangement, the upper surface has the metal level, the lower surface has circular metal paster, form PMC, be equipped with the same T type gap of 4 shapes and the same rectangle gap of two shapes on the metal level of lower floor's dielectric slab upper surface, the transition gradual change line and the feed microstrip line that realize impedance matching are connected respectively to the metal level both ends, the metal level of lower surface printing ground connection, through this kind of mode, thereby can effectively restrain space radiation and plane wave, and realize high integration and miniaturization, it is little to have a size, advantages such as easy integration and stable in structure, it is high to have out of band suppression degree simultaneously, easy processing, advantages such as stable in structure.
Drawings
Fig. 1 is a schematic structural diagram of an ultra wide band ISGW band pass filter according to an embodiment of the present invention.
Fig. 2 is a schematic top view of an upper dielectric plate of the ultra-wideband ISGW band-pass filter shown in fig. 1.
fig. 3 is a schematic bottom view of an upper dielectric plate of the ultra-wideband ISGW band-pass filter shown in fig. 1.
Fig. 4 is a schematic top view of a lower dielectric plate of the ultra-wideband ISGW bandpass filter shown in fig. 1.
fig. 5 is a schematic bottom view of a lower dielectric plate of the ultra-wideband ISGW bandpass filter shown in fig. 1.
Fig. 6 is an equivalent circuit diagram of a lower dielectric plate of the ultra-wideband ISGW band-pass filter shown in fig. 1.
Fig. 7 is an equivalent circuit diagram of the ultra-wideband ISGW band-pass filter shown in fig. 1.
Fig. 8 is a diagram illustrating simulation and test results of the return loss and insertion loss of the ultra-wideband ISGW bandpass filter shown in fig. 1 at 12-22 GHz.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1 to 5, the ultra wideband ISGW band pass filter of the present invention includes an upper dielectric plate 1, a lower dielectric plate 3, and a spacing dielectric plate 2 disposed between the upper dielectric plate 1 and the lower dielectric plate 3.
The upper surface of the upper-layer dielectric slab 1 is printed with a first metal layer 11, three rows of first metal via holes 12 which are periodically arranged are arranged on the upper-layer dielectric slab 1, two rows of circular metal patches 13 which are periodically arranged are printed on the lower surface of the upper-layer dielectric slab 1, the two rows of circular metal patches 13 are respectively connected with the first metal layer 11 through the two rows of first metal via holes 12 which are positioned on the outer side, and the arrangement directions of the first metal via holes 12 and the circular metal patches 13 are parallel to the Y axis in the three-dimensional reference coordinate system. As shown in fig. 1, the upper surface of the upper dielectric sheet 1 is located on the XOY plane in the three-dimensional reference frame. In the present embodiment, the middle row of first metal vias 12 is located on the center line in the Y-axis direction of the upper dielectric board 1. Each circular metal patch 13 constitutes a mushroom-type EBG (electromagnetic field bandgap) structure together with the first metal via 12 thereon, so that the mushroom-type EBG structure is formed on the upper dielectric board 1 in a periodic arrangement.
the spacing dielectric plate 2 is used for separating the upper dielectric plate 1 and the lower dielectric plate 3, so that a gap is formed between the upper dielectric plate 1 and the lower dielectric plate 3. The upper dielectric plate 1, the lower dielectric plate 3 and the spacer dielectric plate 2 may be bonded together or fixed together by screws.
The upper surface of the lower dielectric plate 3 is printed with a second metal layer 31, a transition gradual change line 32 connected to two sides of the second metal layer 31, and a feed microstrip line 33 connected to the transition gradual change line 32, and the lower surface of the lower dielectric plate 3 is printed with a third metal layer 34. The width of the transition gradually-changing line 32 gradually increases from one side connected to the feed microstrip line 33 to the other side.
The edges of the two sides of the second metal layer 31 are provided with second metal via holes 35 which are periodically arranged, the middle part of the second metal layer 31 is provided with third metal via holes 36 which are periodically arranged, and the arrangement direction of the second metal via holes 35 and the third metal via holes 36 is parallel to the Y axis. In the present embodiment, the third metal via 36 is located on a center line in the Y-axis direction of the second metal layer 31. The second metal layer 31 is connected to the third metal layer 34 through a second metal via 35 and a third metal via 36.
Two pairs of T-shaped gaps 37 with the same shape are arranged on the second metal layer 31 at intervals in the direction parallel to the Y axis, each pair of T-shaped gaps 37 is symmetrical with respect to the arrangement direction of the third metal via holes 36, and rectangular gaps 38 with the same shape are respectively arranged on two sides of each pair of T-shaped gaps 37 in the Y axis direction. The length of the two rectangular slots 38 may be half the wavelength length of the waveguide. It should be noted that the shape of the T-shaped slit 37 in the present embodiment may not be a strict T-shape, but a T-like shape with a slightly protruding intersection.
In the ultra-wideband ISGW band-pass filter of the embodiment, the T-shaped slot 37 can enhance the electric coupling effect, the upper dielectric plate 1, the first metal via hole 12 and the metal circular patch 13 form an ideal magnetic conductor layer, the space radiation loss is effectively reduced, the plane wave is restrained, and the problem of space resonance is solved.
As shown in fig. 6 and 7, capacitances C1, C2 exist between the slots in the second metal layer 31 on the upper surface of the lower dielectric plate 3, wherein C1 is the capacitance between the rectangular slots 38, and C2 is the capacitance between the T-shaped slots 37; since the third metal via 36 is arranged around the gap of the second metal layer 31, the third metal via 36 is in contact with the second metal layer 31 and the third metal layer 34 on the lower surface of the lower dielectric plate 3 respectively, so that inductances L1 and L2 exist, the third metal via 36, the second metal via 35 and the third metal layer 34 are connected, so that an inductance Lr exists, a capacitance Cr exists between the gap on the second metal layer 31 and the third metal layer 34, Ld represents the grounding inductance of the lower dielectric plate 3, and Lc and Cc are equivalent inductance-capacitance elements of the input and output ends of the substrate.
The central frequency of the filter can be estimated according to the central frequency, an equivalent circuit of the lower dielectric plate 3 is a Chebyshev filter, and the formed PMC structure increases the capacitors and inductors which are connected in parallel in each order of circuits of the cascaded Chebyshev filter, so that the Chebyshev filter is changed into an elliptic filter, transmission zeros are arranged on two sides of a pass band of the Chebyshev filter, and the out-of-band attenuation is steeper.
In this embodiment, the length and width of the upper dielectric plate 1 are the same as those of the spacing dielectric plate 2, and the thickness of the upper dielectric plate 1 is greater than that of the spacing dielectric plate 2, so that the electromagnetic band gap can cover the passband of the filter, and the out-of-band attenuation steepness of the filter is improved. The width of the lower dielectric plate 3 is the same as the width of the upper dielectric plate 1 and the width of the spacing dielectric plate 2, the length of the lower dielectric plate 3 is greater than the length of the upper dielectric plate 1 and the length of the spacing dielectric plate 2 to expose the transition gradual change line 32 and the feed microstrip line 33, and the transition gradual change line 32 and the feed microstrip line 33 connected with the second metal layer 31 enable the characteristic impedance of the ultra-wideband ISGW band-pass filter to be kept stable when the frequency changes, so that integration and testing are facilitated.
The ultra-wideband ISGW band-pass filter of the embodiment has the following characteristics in practical application:
The adjustment of the working bandwidth can be realized by adjusting the size of the rectangular slot 38 on both sides of the lower dielectric plate 3, for example, the working bandwidth of the pass band can be increased by reducing the length of the rectangular slot 38, and the working bandwidth of the pass band can be reduced by reducing the width of the rectangular slot 38 without affecting the central working frequency;
The diameter of the third metal via hole 36 in the middle of the lower dielectric plate 3 can be changed to change the grounding inductances at all levels, so as to adjust the center frequency of the band-pass filter, for example, the center frequency of the pass band can be moved to the left by reducing the diameter of the third metal via hole 36, and the center frequency of the pass band can be moved to the right by increasing the diameter of the third metal via hole 36 without affecting the working bandwidth;
The adjustment of the center frequency of the band-pass filter can be realized by changing the distance between two adjacent third metal via holes 36 in the middle of the lower dielectric plate 3, for example, the center frequency of the pass band can be moved to the right by reducing the distance between two adjacent third metal via holes 36 without affecting the working bandwidth;
The adjustment of the working bandwidth can be realized by adjusting the thicknesses of the upper dielectric plate 1 and the spacing dielectric plate 2, for example, the working bandwidth can be increased by increasing the thickness of the spacing dielectric plate 2; the working bandwidth can be reduced by increasing the thickness of the upper dielectric plate 1.
In practical application, the dielectric constant of the upper dielectric plate 1 is higher than that of the spacing dielectric plate 2 and the lower dielectric plate 3, and the dielectric constants of the spacing dielectric plate 2 and the lower dielectric plate 3 are the same.
In order to describe the ultra-wideband ISGW band-pass filter of the present embodiment in detail, a specific example is given below. In this specific example, FR4 dielectric material having a dielectric constant of 4.6, a loss tangent of 0.02 and a thickness of 1.6mm is used as the upper dielectric plate 1, Rogers dielectric material having a dielectric constant of 3.36, a loss tangent of 0.0027 and a thickness of 0.304mm is used as the spacer dielectric plate 2, and Rogers dielectric material having a dielectric constant of 3.36, a loss tangent of 0.0027 and a thickness of 0.508mm is used as the lower dielectric plate 3. The width of the lower dielectric plate 3 is 14.6mm, the length is 29.2mm, the overall dimension of the ultra-wideband ISGW band-pass filter is 14.6mm 29.2mm 2.412mm, and test results are obtained through simulation and test, as shown in FIG. 8, the test results show that the center frequency of the filter is 17.5GHz, the working bandwidth is 6.51GHz, and transmission zeros are respectively located at 12.9GHz and 22.1 GHz; the insertion loss is better than 1.1dB, the return loss is better than 18.3dB, the out-of-band rejection reaches 40dB, and in the figure, S11 represents the return loss, and S21 represents the insertion loss.
In summary, the ISGW broadband bandpass filter of this embodiment has the following advantages:
1) The size is small, the structure is simple, and the transmission performance is good;
2) The passband is wider within the passband range;
3) the structure is stable, the integration is easy, and the processing is easy;
4) the packaging structure enables transmission zeros to be arranged on two sides of the passband of the filter.
The above only is the embodiment of the present invention, not limiting the patent scope of the present invention, all the equivalent structures or equivalent processes that are used in the specification and the attached drawings or directly or indirectly applied to other related technical fields are included in the patent protection scope of the present invention.
Claims (10)
1. An ultra-wideband ISGW band-pass filter is characterized by comprising an upper dielectric slab (1), a lower dielectric slab (3) and a spacing dielectric slab (2) arranged between the upper dielectric slab (1) and the lower dielectric slab (3);
The upper surface of the upper-layer dielectric slab (1) is printed with a first metal layer (11), three rows of first metal through holes (12) which are periodically arranged are formed in the upper-layer dielectric slab (1), two rows of circular metal patches (13) which are periodically arranged are printed on the lower surface of the upper-layer dielectric slab (1), the two rows of circular metal patches (13) are respectively connected with the first metal layer (11) through the two rows of first metal through holes (12) which are positioned on the outer side, and the arrangement direction of the first metal through holes (12) and the circular metal patches (13) is parallel to the Y axis in a three-dimensional reference coordinate system;
the upper surface of the lower dielectric plate (3) is printed with a second metal layer (31), transition gradually-changing lines (32) connected with two sides of the second metal layer (31) and a feed microstrip line (33) connected with the transition gradually-changing lines (32), the lower surface of the lower dielectric plate (3) is printed with a third metal layer (34), the edges of two sides of the second metal layer (31) are provided with second metal via holes (35) which are periodically arranged, the middle part of the second metal layer (31) is provided with third metal via holes (36) which are periodically arranged, the arrangement directions of the second metal via holes (35) and the third metal via holes (36) are parallel to the Y axis, two pairs of T-shaped slots (37) which are arranged at intervals along the direction parallel to the Y axis are arranged on the second metal layer (31), and each pair of T-shaped slots (37) is symmetrical with respect to the arrangement direction of the third metal via holes (36), rectangular gaps (38) with the same shape are respectively arranged on two sides of the two pairs of T-shaped gaps (37) along the Y-axis direction;
Wherein the width of the transition gradual change line (32) is gradually increased from one side connected with the feed microstrip line (33) to the other side.
2. The ultra-wideband ISGW bandpass filter according to claim 1, wherein the middle row of first metal vias (12) is located on a centerline of the upper dielectric slab (1) in a Y-axis direction.
3. The ultra-wideband ISGW bandpass filter according to claim 1, wherein the third metal via (36) is located on a centerline of the second metal layer (31) in a Y-axis direction.
4. The ultra-wideband ISGW bandpass filter according to claim 1, wherein the length of the two rectangular slots (38) is half the waveguide wavelength length.
5. The ultra-wideband ISGW bandpass filter according to claim 1, wherein the dielectric constant of the upper dielectric plate (1) is higher than that of the spacing dielectric plate (2) and the lower dielectric plate (3), and the dielectric constants of the spacing dielectric plate (2) and the lower dielectric plate (3) are the same.
6. The ultra-wideband ISGW bandpass filter according to claim 5, wherein the upper dielectric plate (1) is made of FR4 dielectric material with a dielectric constant of 4.6, a loss tangent of 0.02 and a thickness of 1.6mm, the spacing dielectric plate (2) is made of Rogers dielectric material with a dielectric constant of 3.36, a loss tangent of 0.0027 and a thickness of 0.304mm, and the lower dielectric plate (3) is made of Rogers dielectric material with a dielectric constant of 3.36, a loss tangent of 0.0027 and a thickness of 0.508 mm.
7. The ultra-wideband ISGW bandpass filter according to claim 6, wherein the upper dielectric plate (1), the lower dielectric plate (3) and the spacing dielectric plate (2) are bonded together or fixed together by screws.
8. the ultra-wideband ISGW bandpass filter according to claim 7, wherein the thickness of the upper dielectric plate (1) is greater than the thickness of the spacing dielectric plate (2), and the length and the width of the upper dielectric plate (1) are the same as those of the spacing dielectric plate (2).
9. The ultra-wideband ISGW bandpass filter according to claim 8, wherein the width of the lower dielectric plate (3) is the same as the widths of the upper dielectric plate (1) and the spacing dielectric plate (2), and the length of the lower dielectric plate (3) is greater than the lengths of the upper dielectric plate (1) and the spacing dielectric plate (2) to expose the transition gradual change line (32) and the feed microstrip line (33).
10. The ultra-wideband ISGW bandpass filter according to claim 9, wherein the lower dielectric plate (3) has a width of 14.6mm and a length of 29.2 mm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110085955A (en) * | 2019-05-09 | 2019-08-02 | 云南大学 | Ultra wide band ISGW bandpass filter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110085955A (en) * | 2019-05-09 | 2019-08-02 | 云南大学 | Ultra wide band ISGW bandpass filter |
| CN110085955B (en) * | 2019-05-09 | 2023-12-22 | 云南大学 | Ultra-wideband ISGW band-pass filter |
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