CN107819180B - Substrate integrated waveguide device and substrate integrated waveguide filter - Google Patents
Substrate integrated waveguide device and substrate integrated waveguide filter Download PDFInfo
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- CN107819180B CN107819180B CN201710892678.9A CN201710892678A CN107819180B CN 107819180 B CN107819180 B CN 107819180B CN 201710892678 A CN201710892678 A CN 201710892678A CN 107819180 B CN107819180 B CN 107819180B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/18—Waveguides; Transmission lines of the waveguide type built-up from several layers to increase operating surface, i.e. alternately conductive and dielectric layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
Abstract
The invention provides a substrate integrated waveguide device and a substrate integrated waveguide filter, wherein the filter comprises at least 2 substrate integrated waveguide resonant cavity components, a surface metal layer, a bottom metal layer and a middle metal layer, each substrate integrated waveguide resonant cavity component comprises a first dielectric substrate layer, a second dielectric substrate layer and a metal layer, the metal layer is arranged between the first dielectric substrate layer and the second dielectric substrate layer, the metal layer is provided with a C-shaped gap, the first dielectric substrate layer, the second dielectric substrate layer and the metal layer are respectively and correspondingly provided with a metal through hole for preventing energy leakage, the C-shaped gap is coupled with the energy of the upper layer and the lower layer, and the metal layer, the adjacent metal layer and the dielectric substrate layer between the metal layer and the adjacent metal layer form 2NThe first mode substrate integrates a wave guide structure. The whole substrate integrated waveguide filter adopts a reasonable stacked multilayer structure, reduces the volume of an integrated waveguide resonant cavity on the premise of ensuring the unchanged performance of the substrate integrated waveguide, and effectively solves the problems of overlarge structural size and difficulty in integration of the metal waveguide.
Description
Technical Field
The invention relates to the technical field of communication, in particular to a substrate integrated waveguide device and a substrate integrated waveguide filter.
Background
A miniaturized, integrated, high-performance band-pass filter is one of the indispensable modules of modern wireless communication systems. The microstrip filter has large loss and low power capacity, and the metal waveguide has overlarge structure size and is difficult to integrate, so that the substrate integrated waveguide technology is widely regarded.
Substrate Integrated Waveguide (SIW) is widely used in wireless communication systems due to its advantages of high quality factor, high power capacity, easy processing and low cost, however it still has the disadvantage that it occupies a large area of circuit layout compared to other components in microwave circuits.
Disclosure of Invention
Therefore, it is necessary to provide a small substrate integrated waveguide device and a substrate integrated waveguide filter for solving the problem that the conventional substrate integrated waveguide resonant cavity is too large to meet the requirement of a microwave integrated circuit.
A substrate integrated waveguide device comprises a first metal layer, a first dielectric substrate layer, a second metal layer, a second dielectric substrate layer and a third metal layer which are sequentially stacked at intervals;
the second metal layer is provided with a C-shaped gap, the first dielectric substrate layer, the first metal layer and the second dielectric substrate layer are respectively and correspondingly provided with a metal through hole for preventing energy leakage, the C-shaped gap is coupled with the energy of the upper layer and the lower layer, and the first metal layer, the first dielectric substrate layer and the second metal layer form a structure 2NThe waveguide structure is integrated on a one-half mode substrate, and the second metal layer and the third metal layer form a structure 2NThe waveguide structure is integrated on a one-half mode substrate, and N is a positive integer.
The substrate integrated waveguide device comprises a first metal layer, a first dielectric substrate layer, a second metal layer, a second dielectric substrate layer and a third metal layer which are sequentially stacked at intervals, wherein the second metal layer is provided with a C-shaped gap, the first dielectric substrate layer, the first metal layer and the second dielectric substrate layer are respectively and correspondingly provided with metal through holes for preventing energy leakage, the C-shaped gap is coupled with the energy of the upper layer and the lower layer, and the first metal layer, the first dielectric substrate layer, the second metal layer, the second dielectric substrate layer and the third metal layer form a structure 2NA waveguide structure is integrated with a mode-division substrate. The whole device is arranged by adopting a reasonable stacked multilayer structure, the volume of the integrated waveguide resonant cavity is reduced on the premise of ensuring the performance of the substrate integrated waveguide to be unchanged, and the miniaturization of the whole substrate integrated waveguide device is realized.
A substrate integrated waveguide filter comprises at least 2 substrate integrated waveguide resonant cavity components, a surface metal layer, a bottom metal layer and an intermediate metal layer;
at least 2 substrate integrated waveguide resonant cavity components are stacked between the surface metal layer and the bottom metal layer, and the middle metal layer is arranged between the upper and lower adjacent 2 substrate integrated waveguide resonant cavity components;
the single substrate integrated waveguide resonant cavity component comprises a first dielectric substrate layer, a second dielectric substrate layer and a metal layer, wherein the metal layer is arranged between the first dielectric substrate layer and the second dielectric substrate layer, a C-shaped gap is formed in the metal layer, and the first dielectric substrate layer, the second dielectric substrate layer and the metal layer are respectively and correspondingly arranged to prevent the first dielectric substrate layer, the second dielectric substrate layer and the metal layer from being damagedThe metal via hole with energy leakage and the C-shaped gap are coupled with the energy of the upper layer and the lower layer, and the metal layer, the adjacent metal layer and the dielectric substrate layer between the metal layer and the adjacent metal layer form a structure 2NThe integrated waveguide structure of the one-half mode substrate comprises adjacent metal layers including a surface metal layer, a middle metal layer or a bottom metal layer, and N is a positive integer.
The invention discloses a substrate integrated waveguide filter, which comprises at least 2 substrate integrated waveguide resonant cavity components, a surface metal layer, a bottom metal layer and a middle metal layer, wherein each substrate integrated waveguide resonant cavity component comprises a first dielectric substrate layer, a second dielectric substrate layer and a metal layer, the metal layer is arranged between the first dielectric substrate layer and the second dielectric substrate layer, the metal layer is provided with a C-shaped gap, the first dielectric substrate layer, the second dielectric substrate layer and the metal layer are respectively and correspondingly provided with a metal through hole for preventing energy leakage, the C-shaped gap is coupled with the energy of the upper layer and the lower layer, and the metal layer, the adjacent metal layer and the dielectric substrate layer between the metal layer and the adjacent metal layer form a structure 2NThe first mode substrate integrates a wave guide structure. The whole substrate integrated waveguide filter adopts a reasonable stacked multilayer structure, reduces the volume of an integrated waveguide resonant cavity on the premise of ensuring the unchanged performance of the substrate integrated waveguide, and effectively solves the problems of overlarge structural size and difficulty in integration of the metal waveguide.
Drawings
FIG. 1 is a schematic structural diagram of one embodiment of a substrate integrated waveguide device of the present invention;
FIG. 2 is a schematic diagram of a structure of one embodiment of a substrate integrated waveguide filter according to the present invention;
FIG. 3 is a schematic diagram of a structure of one embodiment of a substrate integrated waveguide filter according to the present invention;
FIG. 4 is a schematic diagram of a metal layer in a substrate integrated waveguide resonant cavity assembly according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of an intermediate metal layer in an embodiment of a substrate integrated waveguide filter according to the present invention;
fig. 6 is a graph showing experimental results in one example of application of the substrate integrated waveguide filter according to the present invention.
Detailed Description
To explain the technical solutions of the present invention in detail, the substrate integrated waveguide device and the substrate integrated waveguide filter will be described in the following.
Substrate integrated waveguides are a new type of microwave transmission line that utilizes metal vias to achieve the field propagation mode of the waveguide on a dielectric substrate. SIW is widely used in wireless communication systems due to its advantages of high quality factor, high power capacity, easy processing, and low cost, however, researchers have found that it still has the disadvantage that it occupies a large area in circuit layout compared to other elements in a microwave circuit. In order to reduce the size of the SIW filter while maintaining high performance characteristics, researchers have proposed miniaturization methods in order to reduce the size of the SIW filter while maintaining high performance characteristics. Researchers have proposed some miniaturization methods, such as loading the SIW resonant cavity (DGS) and the ring gap by using a defective ground plane, and using a resonator SIW structure in which a characteristic cut-off frequency is changed by using a complementary split ring, thereby reducing the resonant frequency of the SIW resonant cavity; or cutting off the virtual magnetic wall on the SIW resonator to realize half-mode substrate integrated waveguide (HMSIW), the area can be reduced by half, and the area of the quarter-mode substrate integrated waveguide (QMSIW) obtained after further cutting is only one quarter of the original area; even further, the substrate integrated waveguide (EMSIW) is cut into one-eighth mode with only one-eighth of the original area and unchanged performance. As a result of intensive studies, it has been found that the above-mentioned method for miniaturizing the substrate integrated waveguide can achieve miniaturization to some extent, but the integrated waveguide after the miniaturization process still cannot satisfy the microwave integrated circuit requirements.
As shown in fig. 1, the present invention provides a substrate integrated waveguide device, which includes a first metal layer 110, a first dielectric substrate layer 120, a second metal layer 130, a second dielectric substrate layer 140, and a third metal layer 150, which are stacked at intervals in sequence;
the second metal layer 130 has a C-shaped gap, and the first dielectric substrate layer 120, the first metal layer 110 and the second dielectric substrate layer 140 are respectively provided with energy-preventing featuresThe leaked metal via hole and the C-shaped gap couple the energy of the upper layer and the lower layer, and the first metal layer 110, the first dielectric substrate layer 120 and the second metal layer 130 form a structure 2NA waveguide structure integrated with a mode-division substrate, a second metal layer 130, a second dielectric substrate layer 140 and a third metal layer 150 constituting 2NThe waveguide structure is integrated on a one-half mode substrate, and N is a positive integer.
The first metal layer 110, the first dielectric substrate layer 120, the second metal layer 130, the second dielectric substrate layer 140 and the third metal layer 150 are sequentially stacked at intervals, so that a cavity is formed after the multi-level stack is formed. Specifically, the dielectric substrate layers and the two metal layers are spaced at equal distances, and the shapes and sizes of the first metal layer 110, the first dielectric substrate layer 120, the second metal layer 130, the second dielectric substrate layer 140 and the third metal layer 150 may be the same, that is, the 2-layer dielectric substrate layer and the 3-layer metal layer may completely overlap after stacking. The first dielectric substrate layer 120, the second metal layer 130 and the second dielectric substrate layer 140 are respectively provided with metal via holes, the metal via holes provided on the three layers are corresponding, that is, the metal via holes at the same position on the three layers are communicated, the metal via holes can prevent energy leakage, and the C-shaped slot couples the energy of the upper layer and the lower layer. Dielectric substrate layer composition 2 between the upper and lower adjacent 2 metal layers and the upper and lower adjacent 2 metal layersNThe structure of the waveguide integrated on the substrate of a half-mode ensures the stable performance of the whole waveguide integrated on the substrate on the one hand and adopts 2 on the other handNThe quarter-mode substrate integrated waveguide structure can significantly reduce the area. 2NThe structure of the integrated waveguide of the substrate of the one-half mode can be the integrated waveguide of the substrate of the half-mode (N is 1), because the middle of the SIW is an ideal magnetic wall, the power line is parallel to the symmetrical plane, can divide the SIW into two from here, will not change the field pattern, can greatly reduce the volume of the device formed by SIW like this; a quarter-mode substrate integrated waveguide structure (N ═ 2) may also be employed, for example, using the structural arrangement of QMSIW; still further, an eighth-substrate integrated waveguide structure (N-3) may be used, such as an EMSIW structure. Preferably, a quarter-mode substrate integrated waveguide structure may be employed.
The substrate integrated waveguide device comprises a first metal layer 110, a first dielectric substrate layer 120, a second metal layer 130, a second dielectric substrate layer 140 and a third metal layer 150 which are sequentially stacked at intervals, wherein the second metal layer 130 is provided with a C-shaped gap, the first dielectric substrate layer 120, the first metal layer 110 and the second dielectric substrate layer 140 are respectively and correspondingly provided with metal through holes for preventing energy leakage, the C-shaped gap is coupled with energy of an upper layer and a lower layer, and the first metal layer 110, the first dielectric substrate layer 120, the second metal layer 130, the second dielectric substrate 140 and the third metal layer 150 form a structure 2NA waveguide structure is integrated with a mode-division substrate. The whole device is arranged by adopting a reasonable stacked multilayer structure, the volume of the integrated waveguide resonant cavity is reduced on the premise of ensuring the performance of the substrate integrated waveguide to be unchanged, and the miniaturization of the whole substrate integrated waveguide device is realized.
In one embodiment, the metal via holes on the same layer are distributed in an L-type, a linear-type or pi-type.
The same level refers to the same layer as the first dielectric substrate layer 120, the second metal layer 130, or the second dielectric substrate layer 140. On the first dielectric substrate layer 120, the second metal layer 130 and the second dielectric substrate layer 140, the metal via holes of each layer are distributed in an L-shape, so that the first metal layer 110, the first dielectric substrate layer 120, the second metal layer 130, the second dielectric substrate layer 140 and the third metal layer 150 are stacked to form a single integrated waveguide resonant cavity. Optionally, the metal vias on the same layer may be arranged in a T-shaped distribution, and there are 2 resonant cavities on the same layer.
As shown in fig. 2, a substrate integrated waveguide filter includes at least 2 substrate integrated waveguide resonant cavity components 210, a surface metal layer 220, a bottom metal layer 230, and an intermediate metal layer 240;
at least 2 substrate integrated waveguide resonant cavity components 210 are stacked between the surface metal layer 220 and the bottom metal layer 230, and the middle metal layer 240 is arranged between the upper and lower adjacent 2 substrate integrated waveguide resonant cavity components 210;
the single substrate integrated waveguide resonant cavity assembly 210 includes a first substrate integrated waveguide resonatorThe dielectric substrate layer 120, the second dielectric substrate layer 140 and the metal layer, the metal layer is disposed between the first dielectric substrate layer 120 and the second dielectric substrate layer 140, the metal layer is provided with a C-shaped gap, the first dielectric substrate layer 120, the second dielectric substrate layer 140 and the metal layer are respectively and correspondingly provided with a metal via hole for preventing energy leakage, the C-shaped gap is coupled with energy of the upper layer and the lower layer, and the metal layer, the adjacent metal layer and the dielectric substrate layer between the metal layer and the adjacent metal layer form a structure 2NThe integrated waveguide structure of the first-mode substrate comprises adjacent metal layers including a surface metal layer, a middle metal layer and a bottom metal layer, wherein N is a positive integer.
The number of the substrate integrated waveguide resonant cavity components 210 is at least 2, at least 2 substrate integrated waveguide resonant cavity components 210 are stacked and arranged between the surface metal layer 220 and the bottom metal layer 230, the surface metal layer 220 can be understood as the uppermost metal layer of the whole substrate integrated waveguide filter, the bottom metal layer 230 can be understood as the lowermost metal layer of the whole substrate integrated waveguide filter, and at least 2 substrate integrated waveguide resonant cavity components 210 are sandwiched by the surface metal layer 220 and the bottom metal layer 230. An intermediate metal layer 240 is disposed between the upper and lower adjacent 2 substrate integrated waveguide resonant cavity assemblies 210, and it can be understood that the intermediate metal layer 240 forms integrated waveguide resonant cavities respectively formed by the upper and lower adjacent 2 substrate integrated waveguide resonant cavity assemblies 210, that is, there are integrated waveguide resonant cavities respectively above and below the intermediate metal layer 240. The surface metal layer 220, the middle metal layer 240 and the bottom metal layer 230 may be the same metal layer, and 2 is formed between the metal layer and the adjacent metal layer and the dielectric substrate layer between the metal layer and the adjacent metal layer in the substrate integrated waveguide resonant cavity assembly 210NA mode-one substrate integrated wave guide structure, adjacent metal layers can be a surface metal layer 220 or an intermediate metal layer 240 or a bottom metal layer 230, and a dielectric substrate layer can be a first dielectric substrate layer 120 or a second dielectric substrate layer 140 in each substrate integrated wave guide resonant cavity assembly 210.
The metal layer in each substrate integrated waveguide resonant cavity component 210 is provided with a C-shaped slit, the first dielectric substrate layer 120, the second dielectric substrate layer 140 and the metal layer are respectively and correspondingly provided with a metal via hole for preventing energy leakage, and the C-shaped slit is coupled with the energy of the upper layer and the lower layer. The metal through holes formed in the three layers correspond to each other, namely the metal through holes in the same position on the three layers are communicated with each other, the metal through holes can prevent energy leakage, and the C-shaped gaps are used for coupling the energy of the upper layer and the lower layer. Optionally, the metal via holes formed in each substrate integrated waveguide resonant cavity assembly 210 are all corresponding, that is, the metal via holes at the same position on all layers are communicated, so that the whole substrate integrated waveguide filter has a compact and reasonable structure.
Taking the example shown in fig. 2 (to facilitate the case that only 2 substrate integrated waveguide resonant cavity assemblies 210 are shown in fig. 2), the dielectric substrate layer between the metal layer and the surface metal layer 220 and between the metal layer and the surface metal layer 220 in the first substrate integrated waveguide resonant cavity assembly 210 constitutes 2NThe first-mode substrate is integrated with a guided wave structure; 2 is formed between the metal layer and the middle metal layer 240 and the dielectric substrate layer between the metal layer and the middle metal layer 240 in the first substrate integrated waveguide resonant cavity component 210NThe first-mode substrate is integrated with a guided wave structure; the dielectric substrate layers between the metal layer and the bottom metal layer 230 and between the metal layer and the bottom metal layer 230 in the second substrate integrated waveguide resonant cavity assembly 210 form 2NThe first mode substrate integrates a wave guide structure. 2 are respectively formed between the dielectric substrate layers between the upper and lower adjacent 2 metal layers and between the upper and lower adjacent 2 metal layersNThe structure of the waveguide integrated on the substrate of a half-mode ensures the stable performance of the whole waveguide integrated on the substrate on the one hand and adopts 2 on the other handNThe quarter-mode substrate integrated waveguide structure can significantly reduce the area. 2NThe structure of the integrated waveguide of the substrate of the one-half mode can be the integrated waveguide of the substrate of the half-mode (N is 1), because the middle of the SIW is an ideal magnetic wall, the power line is parallel to the symmetrical plane, can divide the SIW into two from here, will not change the field pattern, can greatly reduce the volume of the device formed by SIW like this; a quarter-mode substrate integrated waveguide structure, such as a QMSIW structured arrangement; further, one-eighth substrate integrated waveguide structures, e.g. usingThe EMSIW structure is used for setting.
To further illustrate the structure of the substrate integrated waveguide filter according to the present invention, the following description is made with reference to fig. 3, and also for convenience, only 2 substrate integrated waveguide resonant cavity assemblies are shown in fig. 3.
In fig. 3, the first substrate integrated waveguide resonant cavity component includes a first dielectric substrate layer, a metal layer 2, and a second dielectric substrate layer, and the second substrate integrated waveguide resonant cavity component includes a third dielectric substrate layer, a metal layer 4, and a fourth dielectric substrate layer, where the metal layer 1 is a surface metal layer, the metal layer 5 is a bottom metal layer, and the metal layer 3 is an intermediate metal layer. In the first substrate integrated waveguide resonant cavity component, 2 is formed between a metal layer (metal layer 2) and a surface metal layer (metal layer 1) and a dielectric substrate layer (first dielectric substrate layer) between the metal layer (metal layer 2) and the dielectric substrate layer (metal layer 1)NThe first-mode substrate is integrated with a guided wave structure; in the first substrate integrated waveguide resonant cavity component, 2 is formed between the metal layer (metal layer 2) and the middle metal layer (metal layer 3) and the dielectric substrate layer (second dielectric substrate layer) between the metal layer (metal layer 2) and the middle metal layer (metal layer 3)NThe first-mode substrate is integrated with a guided wave structure; in the second substrate integrated waveguide resonant cavity component, 2 is formed between the metal layer (metal layer 4) and the bottom metal layer (metal layer 5) and the dielectric substrate layer (fourth dielectric substrate layer) between the metal layer (metal layer 4) and the bottom metal layer (metal layer 5)NThe first mode substrate integrates a wave guide structure. The corresponding relation to FIG. 3 is that the metal layer 1, the metal layer 2 and the first dielectric substrate layer form a layer 2NThe first-mode substrate is integrated with a guided wave structure; the metal layer 2, the metal layer 3 and the second dielectric substrate layer constitute 2NThe first-mode substrate is integrated with a guided wave structure; the metal layer 3, the metal layer 4 and the third dielectric substrate layer constitute 2NThe first-mode substrate is integrated with a guided wave structure; the metal layer 4, the metal layer 5 and the fourth dielectric substrate layer form a structure 2NThe first mode substrate integrates a wave guide structure.
The substrate integrated waveguide filter comprises at least 2 substrate integrated waveguide resonant cavity components 210, a surface metal layer 220 and a bottom surface goldThe auxiliary layer 230 and the middle metal layer 240, the single substrate integrated waveguide resonant cavity assembly 210 includes a first dielectric substrate layer 120, a second dielectric substrate layer 140 and a metal layer, the metal layer is disposed between the first dielectric substrate layer 120 and the second dielectric substrate layer 140, the metal layer is provided with a C-shaped gap, the first dielectric substrate layer 120, the second dielectric substrate layer 140 and the metal layer are respectively and correspondingly provided with a metal via hole for preventing energy leakage, the C-shaped gap couples energy of the upper and lower layers, the metal layer and the adjacent metal layer, and the dielectric substrate layer therebetween form a 2NThe first mode substrate integrates a wave guide structure. The whole substrate integrated waveguide filter adopts a reasonable stacked multilayer structure, reduces the volume of an integrated waveguide resonant cavity on the premise of ensuring the unchanged performance of the substrate integrated waveguide, and effectively solves the problems of overlarge structural size and difficulty in integration of the metal waveguide.
In one embodiment, the metal vias in the same layer are arranged in an L-shaped distribution.
The same layer refers to the same layer as the first dielectric substrate layer 120, the second dielectric substrate layer 140 or the metal layer. On the first dielectric substrate layer 120, the second dielectric substrate layer 140 and the metal layer, the metal via holes of each layer are distributed in an L shape, so that a single integrated waveguide resonant cavity assembly formed by stacking the first dielectric substrate layer 120, the second dielectric substrate layer 140 and the metal layer of a single substrate integrated waveguide comprises a single resonant cavity.
As shown in fig. 4, in one embodiment, the metal vias in the same layer are arranged in a T-shaped distribution.
As shown in fig. 4, in one embodiment, the resonant cavity of the single substrate integrated waveguide resonant cavity assembly 210 includes a first resonant cavity and a second resonant cavity, which are symmetrical, and a symmetry axis of the first resonant cavity and the second resonant cavity is a metal via in a straight line of a protruding edge in metal vias arranged in a T-shaped distribution.
The metal via hole of same aspect is T type distribution setting, and the metal via hole of same aspect equidirectional can the line constitute mutually perpendicular's horizontal limit straight line and protruding limit straight line like this, and inessential, protruding limit straight line connection is in the mid point position of horizontal limit straight line, and this aspect of protruding limit straight line divides into two symmetrical regions promptly. Two resonant cavities are arranged on the same layer in the whole integrated waveguide resonant cavity component.
In one embodiment, the first resonant cavity is coupled to the second resonant cavity through a metal window in the metal layer, as shown in figure 4.
The metal windowing refers to a region of a boundary between a metal via farthest from the horizontal line in the convex line and an adjacent layer, specifically, a region shown as L4 in fig. 4. In this embodiment, a single integrated waveguide resonant cavity assembly includes two resonant cavities coupled by a metal window L4.
As shown in fig. 5, in one embodiment, the substrate integrated waveguide filter further includes a metal probe, the metal probe is disposed on the middle metal layer 240, and the resonant cavities at corresponding positions in the upper and lower adjacent 2 substrate integrated waveguide resonant cavity assemblies 210 are coupled by the metal probe.
The metal probe is disposed on the middle metal layer 240, and the upper and lower resonant cavities of the substrate integrated waveguide resonant cavity assembly 210 are disposed on the middle metal layer, and are coupled by the metal probe. Optionally, each of the middle metal layers 240 is provided with 2 metal probes, two metal probes are disposed at two ends of the middle metal layer 240, more specifically, two metal probes are disposed correspondingly, and a connection line between each metal probe and an adjacent metal via is parallel to one of the boundaries of the middle metal layer 240.
As shown in fig. 3, the substrate integrated waveguide filter of the present invention further includes a first metal microstrip line feeder and a second metal microstrip line feeder;
the first metal microstrip line feeder and the second metal microstrip line feeder are respectively disposed at two ends of a metal layer in the substrate integrated waveguide resonant cavity assembly 210 adjacent to the surface metal layer 220.
The first metal microstrip line feeder line and the second metal microstrip line feeder line are respectively connected with the peripheral input port and the peripheral output port.
To explain the structure of the substrate integrated waveguide filter and the effect achieved by the same in more detail, the following description will be made with reference to fig. 3 and the accompanying experimental data fig. 6.
As shown in fig. 3, 4 and 5, the whole substrate integrated waveguide filter in longitudinal view includes N dielectric substrate layers and N +1 metal layers, the dielectric substrate layers and the metal layers appear in sequence, the metal layer of the middle layer has metal via holes to generate inter-cavity coupling, and the first metal microstrip line feeder and the second metal microstrip line feeder are connected to the input port and the output port respectively. Fig. 3 shows 4 subminiature substrate integrated waveguide resonator components, separated by upper and lower layers, with 2 resonators in the same layer. The input port and the output port are respectively coupled with the two nearest resonant cavities through feeder lines. The coupling between the first resonant cavity and the second resonant cavity is realized by the metal windowing L4 (see fig. 4), the coupling between the first resonant cavity and the fourth resonant cavity is realized by the first metal probe (see fig. 5), and the coupling between the second resonant cavity and the fourth resonant cavity is realized by the second metal probe (see fig. 5). Experimental data of the substrate integrated waveguide filter consisting of the 4 subminiature substrate integrated waveguide resonant cavities are shown in figure 6, S21 in figure 6 is a transmission coefficient, S11 is a reflection coefficient, the area of the resonant cavity of the substrate integrated waveguide filter is only 2.7% of that of the original substrate integrated waveguide resonant cavity, the height of the resonant cavity is 2 times of that of the original substrate integrated waveguide resonant cavity, the 4-cavity substrate integrated waveguide filter works at 2.92ghz, the minimum insertion loss and the maximum return loss are respectively-1.8 dB and-14.6 dB, and the bandwidth of the filter is about 13%. Therefore, the whole substrate integrated waveguide filter solves the problem of miniaturization of the substrate integrated waveguide, and the performance of the substrate integrated waveguide filter is kept unchanged; the problems of large loss and low power capacity of the microstrip filter are solved; the problems that the metal waveguide is too large in structural size and difficult to integrate are solved, and meanwhile, the whole substrate integrated waveguide filter is excellent in performance.
The above examples only show some embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A substrate integrated waveguide device is characterized by comprising a first metal layer, a first dielectric substrate layer, a second metal layer, a second dielectric substrate layer and a third metal layer which are sequentially stacked at intervals;
the second metal layer is provided with C-shaped gaps, the first dielectric substrate layer, the first metal layer, the second dielectric substrate layer and the second metal layer are respectively and correspondingly provided with metal through holes communicated with each other to prevent energy leakage, the C-shaped gaps are coupled with the energy of the upper layer and the lower layer, and the first metal layer, the first dielectric substrate layer and the second metal layer form a structure 2NThe second metal layer, the second dielectric substrate layer and the third metal layer form a structure 2NAnd the waveguide structure is integrated on the mode-splitting substrate, and N is a positive integer.
2. The substrate integrated waveguide device of claim 1, wherein the metal vias in the same layer are distributed in pi type, L type or I type.
3. A substrate integrated waveguide filter is characterized by comprising at least 2 substrate integrated waveguide resonant cavity components, a surface metal layer, a bottom surface metal layer and an intermediate metal layer;
the at least 2 substrate integrated waveguide resonant cavity components are stacked between the surface metal layer and the bottom metal layer, and the middle metal layer is arranged between the upper and lower adjacent 2 substrate integrated waveguide resonant cavity components;
it is single integrated waveguide resonant cavity subassembly of substrate includes first dielectric substrate layer, second dielectric substrate layer and metal level, in the integrated waveguide resonant cavity subassembly of substrate metal level set up in first dielectric substrate layer with between the second dielectric substrate layer, metal level is provided with C type gap in the integrated waveguide resonant cavity subassembly of substrate, the second dielectric substrate layerA dielectric substrate layer, second dielectric substrate layer and metal layer corresponds respectively and offers the metal via hole that communicates with each other and prevent energy leakage in the integrated waveguide resonant cavity subassembly of substrate, the energy of lower floor on the C type gap coupling, metal layer, adjacent metal layer in the integrated waveguide resonant cavity subassembly of substrate and metal layer with dielectric substrate layer between the adjacent metal layer constitutes 2NThe integrated waveguide structure of the one-half mode substrate comprises adjacent metal layers including a surface metal layer, a middle metal layer or a bottom metal layer, and N is a positive integer.
4. The substrate integrated waveguide filter of claim 3, wherein the metal vias at the same level are disposed in an L-shaped distribution.
5. The substrate integrated waveguide filter of claim 3, wherein the metal vias at the same level are arranged in a T-shaped distribution.
6. The substrate integrated waveguide filter according to claim 5, wherein the resonant cavity of the substrate integrated waveguide resonant cavity assembly comprises a first resonant cavity and a second resonant cavity, which are symmetrical, and a symmetry axis of the first resonant cavity and the second resonant cavity is a straight line of a convex side of the metal via holes arranged in a T-shaped distribution.
7. The substrate integrated waveguide filter according to claim 6, wherein the first resonant cavity and the second resonant cavity are coupled through metal windowing of a metal layer in the substrate integrated waveguide resonant cavity assembly.
8. The substrate-integrated waveguide filter according to claim 3, further comprising a metal probe, wherein the metal probe is disposed on the intermediate metal layer, and the resonant cavities at corresponding positions in the 2 substrate-integrated waveguide resonant cavity assemblies that are adjacent to each other above and below are coupled by the metal probe.
9. The substrate integrated waveguide filter according to claim 3, wherein the number of the substrate integrated waveguide resonant cavity assemblies is 2, and the resonant cavity of each of the substrate integrated waveguide resonant cavity assemblies comprises 2 resonant cavities.
10. The substrate integrated waveguide filter according to claim 3, further comprising a first metal microstrip feed line and a second metal microstrip feed line;
the first metal microstrip line feeder line and the second metal microstrip line feeder line are respectively arranged at two ends of a metal layer in the substrate integrated waveguide resonant cavity component adjacent to the surface metal layer.
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| CN108493526B (en) * | 2018-04-09 | 2019-06-14 | 广东曼克维通信科技有限公司 | Filter resonance device and symmetrical fold substrate integral wave guide filter |
| CN108682924B (en) * | 2018-05-29 | 2019-09-20 | 广东曼克维通信科技有限公司 | Substrate integral wave guide filter |
| CN109378561B (en) * | 2018-10-19 | 2020-06-05 | 广东曼克维通信科技有限公司 | Double-passband filter |
| CN109616727B (en) * | 2018-11-15 | 2020-07-31 | 西安电子科技大学昆山创新研究院 | Band-pass filter and preparation method thereof |
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