CN105489984A - Fractal defected structured quarter-mode substrate integrated waveguide bandpass filter - Google Patents
Fractal defected structured quarter-mode substrate integrated waveguide bandpass filter Download PDFInfo
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- CN105489984A CN105489984A CN201610032160.3A CN201610032160A CN105489984A CN 105489984 A CN105489984 A CN 105489984A CN 201610032160 A CN201610032160 A CN 201610032160A CN 105489984 A CN105489984 A CN 105489984A
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- resonant cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
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Abstract
The invention relates to a fractal defected structured quarter-mode substrate integrated waveguide bandpass filter which comprises the components of a dielectric substrate, metal patches which are arranged on the upper surface and the lower surface of the dielectric substrate, and metal through holes in the dielectric substrate. Each metal patch comprises an input-output port microstrip line, a first resonant chamber with a fractal defected structured quarter-mode substrate integrated waveguide, a second resonant chamber and a third resonant chamber. The first resonant chamber and the third resonant chamber are in mirror symmetry relative to the central axis of the second resonant chamber. A first electric coupling is arranged between the first resonant chamber and the second resonant chamber. A second electric coupling is arranged between the second resonant chamber and the third resonant chamber. Magnetic coupling between the first resonant chamber and the third resonant chamber is realized through an inductive window. The fractal defected structured quarter-mode substrate integrated waveguide bandpass filter has beneficial effects of compact structure, small dimension, high upper stopband selectivity, high performance stability and easy system integration.
Description
Technical field
The present invention relates to microwave and millimeter wave filter field, be specifically related to substrate integral wave guide filter.
Background technology
Substrate integral wave guide filter received much concern in recent years, substrate integration wave-guide is out of shape by conventional metals waveguide, common substrate is opened two row's metal throuth holes, be used for replacing the narrow limit of rectangular waveguide, substrate integral wave guide filter is while remaining the feature that metal waveguide structure filter Q is high, selectivity is good, the volume also having had microstrip structure filter concurrently is little, lightweight, cost is low, be easy to the feature of processing, in addition, can also realize seamless integrated with microstrip circuit, large-scale production is wanted in the design being applicable to microwave and millimeter wave circuit.But microstrip filter relatively, substrate integral wave guide filter size is still larger.Although the multilayer technique of advanced person can reduce overall dimensions, cost is high, and the course of processing is complicated.In order to reduce the volume of filter further; along the magnetic wall of substrate integration wave-guide resonant cavity, resonant cavity can be cut; so more the filter based on half module, 1/4th mould substrate integration wave-guides of small size is suggested, and has the electromagnetic property similar to full mode resonant cavity.
Summary of the invention
The object of the invention is to propose a kind of fractal defect sturcture 1/4th mould substrate integration wave-guide band pass filter, have the various advantage of conventional substrate integral wave guide filter concurrently, reduce the size of filter further, improve the upper stopband characteristic of filter.
Technical scheme of the present invention: a kind of fractal defect sturcture 1/4th mould substrate integration wave-guide band pass filter, its feature comprises: dielectric substrate and the metal throuth hole be arranged in the metal patch of dielectric substrate upper and lower surface and dielectric substrate, and described metal patch comprises fractal structure 1/4th mould substrate integration wave-guide first resonant cavity of input/output port microstrip line and etching isosceles right triangle defect, the second resonant cavity and the 3rd resonant cavity; Described first resonant cavity and the 3rd resonant cavity are with the central shaft specular of the second resonant cavity; Described metal throuth hole runs through dielectric substrate and upper and lower surface metal patch; Utilize 1/4th mould substrate integration wave-guides, 1/4th described mould substrate integration wave-guides say that resonant cavity cuts along substrate integration wave-guide rectangular cavity diagonal magnetic wall to obtain to have two open borders; Fractal defect sturcture 1/4th mould substrate integration wave-guide etches three in the metal surface, upper strata of resonant cavity between two with the isosceles right triangle that the mode on shared summit is connected, and is used as fundamental resonance unit by forming fractal defect sturcture on 1/4th mould substrate integration wave-guides.
Electric coupling is realized by groove between described filter first resonant cavity and the second resonant cavity, electric coupling is realized by groove between second resonant cavity and the 3rd resonant cavity, magnetic coupling is realized by perceptual window between first resonant cavity and the 3rd resonant cavity, thus realize cross-couplings, coupling between first resonant cavity and the 3rd resonant cavity makes filter create transmission zero, stiffness of coupling is larger, and transmission zero is the closer to passband edge, and selectivity is better; The microstrip line that input port, output port are directly 50 ohm with two characteristic impedances is connected.
Beneficial effect of the present invention is: compare traditional three chamber coupling filters; fractal defect sturcture 1/4th mould substrate integral wave guide filter volume reduces 88%; fundamental resonance unit is used as by etching isosceles right triangle defect on 1/4th mould substrate integration wave-guides; resonant cavity surface current is subject to the interference of fractal structure; portion of electrical current through middle paster, will extend equivalent current length like this.Under identical resonance frequency, the size of fractal structure resonant cavity can be less than general conventional resonance chamber, reduces the size in each chamber, thus reduce the size of whole filter.Logical in-band insertion loss is better than-1.25dB, and in passband, return loss is better than-25dB, occurs that transmission zero drastically increases the frequency selectivity of stopband at 3.9dB place.
Accompanying drawing explanation
Fig. 1 a is the planar structure schematic diagram of the single resonant cavity of the embodiment of the present invention.
Fig. 1 b is the cross section structure schematic diagram of the single resonant cavity of the embodiment of the present invention.
Fig. 2 is the structure distribution schematic diagram of the filter of the embodiment of the present invention.
Fig. 3 is the frequency response curve of the filter of the embodiment of the present invention.
In figure: fractal defect sturcture 1/4th mould substrate integration wave-guide resonant cavity upper surface metal patch 1, isosceles right triangle defect 2, metal throuth hole 3, dielectric substrate 4, lower surface metal paster 5, input port 6, first resonant cavity 7, second resonant cavity 8, the 3rd resonant cavity 9, output port 10.
Embodiment
Fractal defect sturcture 1/4th mould substrate integration wave-guide band pass filter; described filter comprises: dielectric substrate 4 and be arranged on metal patch 1,5 and the metal throuth hole 3 of dielectric substrate upper and lower surface, and described metal throuth hole 3 runs through dielectric substrate 4 and upper and lower surface metal patch 1,5.Be single 1/4th mould substrate integration wave-guide resonant cavitys as shown in Figure 1a; two open border is equivalent to desirable magnetic wall; the resonance frequency of resonant cavity determines primarily of the hypotenuse a of the isosceles right triangle of resonant cavity hypotenuse length c and etching; three sizes are etched identical, between any two with the isosceles right triangle 2 that the mode on shared summit is connected in the metal surface, upper strata of 1/4th mould substrate integration wave-guide resonant cavitys.
The present invention is that described filter comprises: input port 6, output port 10, first resonant cavity 7, second resonant cavity 8, the 3rd resonant cavity 9 with the cross-coupled filter of three fractal defect sturcture 1/4th mould substrate integration wave-guide resonant cavity compositions as shown in Figure 2.Described first resonant cavity 7 and the 3rd resonant cavity 9 are with the central shaft specular of the second resonant cavity 8; Between second resonant cavity 8 and the first resonant cavity 7, between the second resonant cavity 8 and the 3rd resonant cavity 9, be electric coupling, between the first resonant cavity 7 and the 3rd resonant cavity 9, realize magnetic coupling by perceptual window; The input port 6 of filter, output port 10 connect the first resonant cavity 7 and the 3rd resonant cavity 9 respectively.The microstrip line that input/output port 6,10 is directly 50 ohm with two characteristic impedances is connected.The centre frequency of filter of the present invention depends on the resonance frequency of resonant cavity, and bandwidth is mainly by the impact of coupling coefficient.The resonance frequency of resonant cavity is primarily of the length c of resonant cavity hypotenuse
1with the hypotenuse length a of isosceles right triangle defect 2
2, a
3determine; G is for regulating the first resonant cavity 7 and the stiffness of coupling between the second resonant cavity 8, second resonant cavity 8 and the 3rd resonant cavity 9; K is for regulating the stiffness of coupling between the first resonant cavity 7 and the 3rd resonant cavity 9.Input port 6 is connected with the 3rd resonant cavity 9 respectively at the first resonant cavity 7 with output port 10, and its characteristic impedance is 50 ohm, and w is for regulating the impedance of input/output terminal microstrip line, and b is for regulating external sort factor.
In the present embodiment, the dielectric substrate relative dielectric constant selected is 2.2, and thickness is 0.508mm; As geometric parameter each in Fig. 2 is respectively: w=1.59mm, a
2=9.75mm, a
3=10.5mm, b=11mm, c
1=30mm, e=2.45mm, k=1.06mm, d=3.55mm, p=0.5mm, g=1mm.
Be illustrated in figure 3 the frequency response curve of the filter of the embodiment of the present invention, wherein dotted line is simulation result, solid line is test result, as can be seen from the figure, simulation result and test result match, in filter passband of the present invention, insertion loss is better than-1.25dB, and in passband, return loss is better than-25dB, occurs that transmission zero drastically increases the frequency selectivity of stopband at 3.9GHz place.
The present invention is a kind of fractal defect sturcture 1/4th mould substrate integration wave-guide band pass filter, in filter, resonant cavity has the plurality of advantages in conventional resonance chamber, fractal structure reduces resonance frequency, compare traditional three chamber coupling filters, fractal defect sturcture 1/4th mould substrate integral wave guide filter volume decreases 88%; Introduce cross-couplings between resonant cavity, make stopband on filter occur a transmission zero, there is good frequency selectivity.
Above-described embodiment not does any pro forma restriction to the present invention, and any content according to foregoing invention solution technique, to any change that embodiment shape or structure are done, all belongs within protection scope of the present invention.
Claims (3)
1. fractal defect sturcture 1/4th mould substrate integration wave-guide band pass filter, it is characterized in that: be used as fundamental resonance unit by accurate 1/4th mould substrate integration wave-guides form fractal structure, this filter comprises input port (6), the first resonant cavity (7), the second resonant cavity (8), the 3rd resonant cavity (9), output port (10); Described first resonant cavity (7) and the 3rd resonant cavity (9) are with the central shaft specular of the second resonant cavity (8); Electric coupling is realized by groove between first resonant cavity (7) and the second resonant cavity (8), realize electric coupling by groove between second resonant cavity (8) and the 3rd resonant cavity (9), between the first resonant cavity (7) and the 3rd resonant cavity (9), realize magnetic coupling by perceptual window; The microstrip line that input port (6), output port (10) are directly 50 ohm with two characteristic impedances is connected.
2. fractal defect sturcture 1/4th mould substrate integration wave-guide band pass filter according to claim 1, it is characterized in that: this filter is made up of three fractal structure 1/4th mould substrate integration wave-guide resonant cavitys, fractal structure 1/4th mould substrate integration wave-guide resonant cavity becomes isosceles right triangle, single resonant cavity utilizes 1/4th mould substrate integration wave-guides, in the isosceles right triangle defect (2) that the upper etching three of the upper surface metal patch (1) of 1/4th mode resonant cavities is connected between two; Described resonant cavity comprises: dielectric substrate (4) and be arranged on dielectric substrate upper surface metal patch (1), lower surface metal paster (5) and metal throuth hole (3); Described metal throuth hole (3) runs through dielectric substrate (4) and upper surface metal patch (1), lower surface metal paster (5).
3. fractal defect sturcture 1/4th mould substrate integration wave-guide band pass filter according to claim 2, is characterized in that: described three isosceles right triangle defect size are identical, and is connected in the mode on shared summit between two.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610032160.3A CN105489984A (en) | 2016-01-18 | 2016-01-18 | Fractal defected structured quarter-mode substrate integrated waveguide bandpass filter |
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| CN201610032160.3A CN105489984A (en) | 2016-01-18 | 2016-01-18 | Fractal defected structured quarter-mode substrate integrated waveguide bandpass filter |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106099274A (en) * | 2016-05-27 | 2016-11-09 | 中国矿业大学 | A kind of slot-coupled compensates 1/8th mould substrate integral wave guide filters of fractal defect sturcture |
| CN106571508A (en) * | 2016-11-11 | 2017-04-19 | 南京理工大学 | Fourth-mode and eighth-mode substrate integrated waveguide-based balanced band-pass filter |
| CN108666750A (en) * | 2018-04-09 | 2018-10-16 | 广东曼克维通信科技有限公司 | Substrate integration wave-guide circular polarized antenna |
| CN111883887A (en) * | 2020-07-13 | 2020-11-03 | 南京理工大学 | High-selectivity balanced filter based on ceramic dielectric loading |
| CN114069175A (en) * | 2021-10-12 | 2022-02-18 | 杭州电子科技大学 | HMSIW multi-passband band-pass filter based on odd-even mode analysis |
| CN114384095A (en) * | 2021-12-31 | 2022-04-22 | 镇江达联电子科技有限公司 | Planar microwave sensor based on triangular resonator and concentration measurement method |
| CN115332747A (en) * | 2022-08-26 | 2022-11-11 | 电子科技大学 | Low-loss quasi-elliptical cavity substrate integrated waveguide band-pass filter |
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| CN101950825A (en) * | 2010-09-01 | 2011-01-19 | 华东交通大学 | Novel compact dual-mode band-pass filter |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106099274A (en) * | 2016-05-27 | 2016-11-09 | 中国矿业大学 | A kind of slot-coupled compensates 1/8th mould substrate integral wave guide filters of fractal defect sturcture |
| CN106571508A (en) * | 2016-11-11 | 2017-04-19 | 南京理工大学 | Fourth-mode and eighth-mode substrate integrated waveguide-based balanced band-pass filter |
| CN106571508B (en) * | 2016-11-11 | 2019-04-16 | 南京理工大学 | Based on a quarter and 1/8th mould substrate integrated waveguide balance bandpass filters |
| CN108666750A (en) * | 2018-04-09 | 2018-10-16 | 广东曼克维通信科技有限公司 | Substrate integration wave-guide circular polarized antenna |
| CN108666750B (en) * | 2018-04-09 | 2020-01-14 | 广东曼克维通信科技有限公司 | Substrate integrated waveguide circularly polarized antenna |
| CN111883887A (en) * | 2020-07-13 | 2020-11-03 | 南京理工大学 | High-selectivity balanced filter based on ceramic dielectric loading |
| CN114069175A (en) * | 2021-10-12 | 2022-02-18 | 杭州电子科技大学 | HMSIW multi-passband band-pass filter based on odd-even mode analysis |
| CN114384095A (en) * | 2021-12-31 | 2022-04-22 | 镇江达联电子科技有限公司 | Planar microwave sensor based on triangular resonator and concentration measurement method |
| CN115332747A (en) * | 2022-08-26 | 2022-11-11 | 电子科技大学 | Low-loss quasi-elliptical cavity substrate integrated waveguide band-pass filter |
| CN115332747B (en) * | 2022-08-26 | 2023-03-24 | 电子科技大学 | Low-loss quasi-elliptical cavity substrate integrated waveguide band-pass filter |
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