CN103326093A - Novel cross coupling substrate integrated waveguide band-pass filter - Google Patents

Novel cross coupling substrate integrated waveguide band-pass filter Download PDF

Info

Publication number
CN103326093A
CN103326093A CN2013101379203A CN201310137920A CN103326093A CN 103326093 A CN103326093 A CN 103326093A CN 2013101379203 A CN2013101379203 A CN 2013101379203A CN 201310137920 A CN201310137920 A CN 201310137920A CN 103326093 A CN103326093 A CN 103326093A
Authority
CN
China
Prior art keywords
coupling
filter
input
integrated waveguide
substrate integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2013101379203A
Other languages
Chinese (zh)
Inventor
李国辉
程孝奇
鉴浩
彭太伟
周华为
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Shanghai for Science and Technology
Original Assignee
University of Shanghai for Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Shanghai for Science and Technology filed Critical University of Shanghai for Science and Technology
Priority to CN2013101379203A priority Critical patent/CN103326093A/en
Publication of CN103326093A publication Critical patent/CN103326093A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

The invention discloses a novel cross coupling substrate integrated waveguide band-pass filter. The filter comprises basic resonant units, wherein rectangular resonant cavities serve as the basic resonant units. Magnetic coupling is achieved among the resonant cavities in a windowing mode. S-shaped grooves are formed to achieve electrical coupling, and input and output are achieved by the adoption of a micro-strip-line and coplanar-waveguide structure. The rectangular SIW resonant cavities are formed by loading of periodic metal through holes in medium substrates. The electrical coupling is achieved through the structure that the S-shaped grooves with symmetrical central axes are formed in the upper metal face and the lower metal face of the two cavities, debugging is convenient, processing is easy, and the structure is suitable for the miniaturization design of the filter. The micro-strip-line and coplanar-waveguide structure is adopted for the input and the output, and the structure is that coplanar waveguides are directly connected with an input 50-Ohm micro strip line and an output 50-Ohm micro strip line, so that an extra transitional design is not needed for matching of ports, and complexity is simplified. The filter is compact in structure, improves out-of-band rejection, has better properties of restraining strays and separating signals, and meets requirements for the miniaturization and high properties of modernization radio communication.

Description

Novel crossed coupling-substrate integrated waveguide band pass filter
Technical field
The present invention relates to a kind of novel crossed coupling-substrate integrated waveguide band pass filter, belong to the radar system field, when realizing the filter miniaturization, there is the performance of the spuious and separation signal of better inhibition.
Background technology
Along with the development of wireless communication technology, the business of microwave and millimeter wave communication system is day by day various, and frequency resource is day by day nervous, and the microwave and millimeter wave circuit is in the urgent need to towards high-performance, miniaturization, direction develops rapidly cheaply.Microwave filter is the key components of radar system, wireless communication system, generally is used for combining or separating the signal of different frequency range.For meeting the needs of modern radiotechnics development, the modern microwave filter is possessing the high performance while, also needs to possess the characteristics of miniaturization, high integration.
Substrate integration wave-guide (SIW) is propose in recent years a kind of new guided wave structure formed, concrete structure is shown in Figure of description 1, this waveguiding structure of realizing by the periodicity metal throuth hole has been inherited the advantages such as the loss of waveguide is low, quality factor are high, power capacity is large, the advantages such as low section, the size of simultaneously also having gathered micro-band be little, be easy to other planar circuits are integrated, the SIW technology has been widely used in designing various microwaves and millimetric wave device.Realized at present multiple passive device, such as filter, antenna, coupler, power splitter etc., the SIW technology is applied in the design of filter, make the way of realization of microwave filter become abundanter, structure is more flexible, circuit performance also is increased dramatically simultaneously, the present invention is based on the SIW technology, designed a kind of novel C wave band cross-coupling band pass filter, this filter construction is tightly beaten, by introducing transmission zero, improved the Out-of-band rejection characteristic, performance with the spuious and separation signal of better inhibition, met the Modern wireless communication miniaturization, high performance requirement.
Summary of the invention
the purpose of filter of the present invention is for the cavity body filter volume in the communication system of applying on market larger, the defect that the Out-of-band rejection characteristic is bad, a kind of novel crossed coupling-substrate integrated waveguide (SIW) band pass filter is provided, the centre frequency of this filter is all 6.16GHz, bandwidth is 280MHz, make to have very strong inhibition ability outside its band by introducing cross-couplings, and the band internal loss is low, structure more steps up to beat, and also has good harmonic inhibition capability simultaneously.
For achieving the above object, design of the present invention is:
(1) adopt SIW rectangular cavity structure to do elementary cell, be convenient to modeling and adjusting in HFSS.
(2) realize magnetic coupling between SIW rectangle resonator by windowing, electric coupling is by realizing at the axisymmetric snakelike tank in the upper and lower metal covering Shang Kai of resonator center.
(3) adopt microstrip line-co-planar waveguide excitation, input and output adopt 50 ohm microstrip, and 50 ohm of coaxial probes can directly be welded on microstrip line, because probe has good contacting, Stability Analysis of Structures with microstrip line.
(4) neoteric SIW cavity body filter adopts the quadravalence cross coupling structure, and wherein cross-couplings has electromechanical coupling characteristic, and its structural adjustment is convenient, and processing is simple, and range of application is more extensive.
According to the foregoing invention design, the present invention adopts following technical proposals:
A kind of New type of S IW cross-coupled filter, comprise: using rectangular cavity as the fundamental resonance unit, the plated-through hole that each resonant element is periodically arranged by bottom metal layer, top layer metallic layer, intermediate medium substrate and four rows surrounds resonant cavity and forms, it is characterized in that: realize magnetic coupling by perceptual window between adjacent resonators, or realize electric coupling by etching snakelike tank on lower metal layer on chamber; Input and export structure adopt co-planar waveguide with input, export 50 ohm microstrip and directly be connected, be convenient to realize External Q.
Described rectangle SIW resonant cavity is the plated-through hole of loading cycle on dielectric substrate, thereby a kind of rectangle class waveguiding structure formed, adopt between two chambeies upper and lower metal covering to open the axisymmetric snakelike tank structure in center and realize capacitive couplings, be applicable to the Miniaturization Design of filter.
Described input/output structure adopts microstrip line-coplanar waveguide structure form, and this structure is used co-planar waveguide directly to be connected with input and output 50 ohm microstrip, so just, without do extra Transition Design for port match, has simplified complexity.
The coats of metal such as described each resonant cavity surface and plated-through hole can be electric conductivity metal materials preferably, as gold or silver or copper, reduce filter insertion loss.
Coupled structure resonator between described adjacent cavity is symmetrical structure, and available even odd mode theory is analyzed.
The present invention compared with prior art, has following apparent outstanding substantive distinguishing features and remarkable advantage:
Filter of the present invention adopts novel cross coupling structure, more traditional cross coupling structure, and the complexity that simplifies the structure, debugging is convenient, by introducing transmission zero, has improved the Out-of-band rejection ability, has met Modern Filter and has designed high performance requirement.
Input/output structure is that co-planar waveguide directly is connected with input and output 50 ohm microstrip, so just, without do extra Transition Design for port match, has simplified complexity, has dwindled the volume of filter, has met the requirement of Modern Filter small design.
Adopt SIW rectangular cavity structure, the filter construction compactness, reduced the complexity of debugging, processing, shortened the design of filter cycle.
The accompanying drawing explanation
Fig. 1 is the SIW structural representation.
Fig. 2 is that 3 dimensions of Fig. 1 dissect schematic diagram.
Fig. 3 is 3 dimension structural representations of rectangle SIW RSPUDTcell of the present invention.
Fig. 4 is the top view planar structure schematic diagram of Fig. 3.
Fig. 5 is the side-looking planar structure schematic diagram of Fig. 3.
Fig. 6 is the terminal of the present invention external world qthe 3 dimension structural representations that value solves.
Fig. 7 is the anatomy schematic diagram of Fig. 6.
Fig. 8 is the top view planar structure schematic diagram of Fig. 6.
Fig. 9 is magnetic coupling 3 dimension structural representations between adjacent rectangle SIW resonant cavity of the present invention.
Figure 10 is the anatomy schematic diagram of Fig. 9.
Figure 11 is the top plan view structural representation of Figure 10.
Figure 12 is electric coupling 3 dimension structural representations between adjacent rectangle SIW resonant cavity of the present invention.
Figure 13 is the anatomy schematic diagram of Figure 12.
Figure 14 is the top view planar structure schematic diagram of Figure 12.
Figure 15 is novel crossed coupling SIW band pass filter circuit topology diagram of the present invention.
Figure 16 is novel crossed coupling SIW band pass filter HFSS illustraton of model of the present invention.
Figure 17 is the top view planar structure schematic diagram of Figure 16.
Figure 18 is novel crossed coupling SIW band pass filter stimulation frequency response diagram of the present invention.
Embodiment
Below in conjunction with accompanying drawing, a preferred embodiment of the present invention is elaborated:
Embodiment mono-:
Referring to Fig. 1 ~ 17 a novel crossed coupling-substrate integrated waveguide band pass filter, comprising: using the rectangle substrate integrated waveguide resonant cavity as the fundamental resonance unit; The plated-through hole (4) that each resonant element is periodically arranged by bottom metal layer (1), top layer metallic layer (3), intermediate medium substrate (2) and four rows surrounds resonant cavity and forms, it is characterized in that: realize magnetic coupling by perceptual window (8) between adjacent resonators, or realize electric coupling by etching snakelike tank (9) on lower metal layer on chamber; Input is with export structure employing co-planar waveguide (7) and input, export 50 ohm microstrip (5,6) directly is connected, and is convenient to realize External Q.
Embodiment bis-:
The present embodiment and embodiment mono-are basic identical, and special feature is as follows: described adjacent resonators and coupled structure are symmetrical; The structure of described magnetic-coupled structure and electric coupling, all be positioned at the center of adjacent two substrate integration wave-guide resonant cavitys; Described dielectric substrate (2) adopts material F 4bM265, each rectangle substrate integrated waveguide resonant cavity bottom metal layer (1) is the metal materials that conduct electricity very well with coats of metal such as top layer metallic layer (3) and plated-through holes (4), reduces filter insertion loss; The structure of described input and output is to use input, export 50 ohm microstrip (5,6) and directly be connected with co-planar waveguide (7), the simplification complexity; Described coupling adopts the quadravalence cross coupling structure, form the topology knot by A1, A2, A3, tetra-cross-couplings of A4 enough, the A1 and the A4 cross-couplings that wherein connect respectively input and output have electromechanical coupling characteristic, realize outside band having two transmission zeros, and the cross-couplings between all the other adjacent resonators is the magnetic coupling structure, greatly improved the Out-of-band rejection characteristic of filter, met the high performance requirements of filter, its compact conformation of while, debugging is convenient, processing is simple, can have wide range of applications in the design of filter of low-cost and high-performance.
Embodiment tri-:
The present embodiment is based on the SIW technology, Fig. 1 has provided SIW structure and size relationship schematic diagram, the SIW structure is by the class waveguiding structure be comprised of dielectric substrate 2, underlying metal 1, top-level metallic 3 and plated-through hole 4, also have that volume is little, cost is low simultaneously concurrently, be easy to processing and integrated excellent specific property, in literary composition rectangle SIW RSPUDTcell simulation model used as shown in Figure 3, by the length of tuning rectangular cavity
Figure DEST_PATH_IMAGE001
control the centre frequency of filter, debugging is convenient.
Theoretical and the filter synthesis theory according to substrate integration wave-guide, design of filter index request of the present invention is: centre frequency
Figure 290341DEST_PATH_IMAGE002
=6.16GHz, bandwidth BW=280MHz, in band, return loss is 20dB, is departing from centre frequency 300MHz place, decay is greater than 30dB; According to generalized chebyshev filter synthesis theory, can outside band, two transmission zeros be set
Figure DEST_PATH_IMAGE003
, finally can obtain:
1. the extraneous Q value of terminal: [ ]=[20.863,20.863]
2. coupling coefficient: [
Figure DEST_PATH_IMAGE005
,
Figure 989492DEST_PATH_IMAGE006
]=[0.0402,0.0399,0.0402 ,-0.0053]
Referring to Fig. 3 ~ 5, this paper selects
Figure DEST_PATH_IMAGE007
mould is as the mode of resonance of resonant cavity, and because field distribution and the propagation characteristic of SIW are similar to traditional metal waveguide, therefore, the original dimension of its resonant cavity can be tried to achieve by the Resonant Frequency Equation formula (1) of metal waveguide:
Figure 69575DEST_PATH_IMAGE008
(1)
Wherein
Figure 2013101379203100002DEST_PATH_IMAGE009
with
Figure 330792DEST_PATH_IMAGE010
respectively the wide of cavity and length
Figure 999671DEST_PATH_IMAGE001
correction value,
Figure 993034DEST_PATH_IMAGE012
(2)
In formula: dfor the diameter of metal throuth hole 4, pfor the spacing of through hole, for the light velocity,
Figure DEST_PATH_IMAGE015
relative dielectric constant for dielectric substrate 2.The dielectric substrate of here selecting is F 4bM265, relative dielectric constant ? r=2.65, dielectric substrate thickness h=1mm, underlying metal 1 and top-level metallic 3 all adopt Copper Foil, dget 2mm, pget 3mm, in one cavity mold type emulation 4, first fixed width a=21mm, by regulating the length of SIW cavity
Figure 294495DEST_PATH_IMAGE001
can make resonant cavity resonance in centre frequency
Figure 880197DEST_PATH_IMAGE002
place.
Referring to Fig. 6 ~ 8, when designing filter, at first can provide the design objective of filter.By these design objectives, we can comprehensively go out the low-pass prototype of filter, and can determine thus the external sort factor of filter.Special feature is: on described one cavity mold type basis, inputting 5 is 50 ohm microstrip with exporting 6, uses co-planar waveguide 7 excitations, adopts the mode of both-end loading, utilizes Electromagnetic Simulation software HFSS to carry out sparameters simulation, as shown in Figure 6, the computing formula of external sort factor Q is as follows for its simulation model:
Figure 310042DEST_PATH_IMAGE016
(3)
Wherein f 0the centre frequency of resonator, f -3dBfor simulation parameter corresponding to model s 21corresponding bandwidth while dropping to 3dB, referring to Fig. 8, the parameter of this structure influence external sort factor has two: l sotwith gap, for the ease of regulating, the present invention adopts fixedly parameter gap=0.5mm, pass through adjustable parameter l sot, utilize formula (3) to simulate respectively the external sort factor qthereby, can obtain the outside that theory is tried to achieve qcorresponding input and output original dimension, outstanding advantage of co-planar waveguide energisation mode, be exactly that this structure is used co-planar waveguide directly to be connected with input and output 50 microstrip lines, so just, without do extra Transition Design for port match, simplified complexity.
Referring to Fig. 9 ~ 14, belong to weak coupling between this filter cavity, the coupling coefficient in adjacent two chambeies kcan be tried to achieve by following formula:
Figure DEST_PATH_IMAGE017
In above formula f 1, f 2be respectively s 21in two resonance peak frequencies of height, they are a little less than single cavity master mould frequency.Must consider the sign problem of coupling coefficient in cross-linked situation.Might as well define magnetic coupling here for just, the present embodiment relates to two kinds of coupled modes: magnetic coupling, electric coupling; In Electromagnetic Simulation software HFSS, utilize eigen mode emulation, adjacent two resonant cavity size are identical, the magnetic coupling coefficient between them ksolving model as Fig. 9 ~ 11.What wherein affect coupling amount size is the width W of perceptual window 8; Electric coupling coefficient between them- ksolving model as Figure 12 ~ 14, what wherein affect coupling amount size is the length of the snakelike line of rabbet joint 9 that erodes away on upper and lower metal covering .
Figure 15 is the novel crossed coupling SIW band pass filter circuit topology diagram of the present embodiment, and A1, A2, A3, A4 are four rectangle SIW resonant cavitys, A1, A2, the equal corresponding diagram 3 of A3, A4, input( output) input (output) structure 5 and 6 in the corresponding diagram 6 respectively of representation signal, K means between two resonant cavitys to exist 8 in magnetic coupling corresponding diagram 9 ~ 11,-K means between two resonant cavitys to exist 9 in the corresponding Figure 12 of electric coupling ~ 14, Figure 17 is the top view plane structure chart of the corresponding novel crossed coupling SIW band pass filter of circuit topological structure in Figure 15, in this example, filter has symmetrical structure, wherein A1 and A2, A3 has identical coupled structure and is coupled measure-alike with A4, resonant cavity A1 and A4, A2 has identical size with A3, input and output feed structure in conjunction with 50 ohm microstrip of Fig. 6-co-planar waveguide, the two-chamber magnetic coupling structure of Fig. 9, the two-chamber electric coupling structure of Figure 12, the single SIW cavity resonator structure of Fig. 3 is set up the block mold figure of filter in Electromagnetic Simulation software HFSS, selected dielectric-slab material is F 4bM265, underlying metal 1 all adopts metal copper foil with top-level metallic 3 and plated-through hole 4, and the thickness of dielectric substrate is that h gets 1mm, the diameter of plated-through hole dget 2mm, the spacing in adjacent two holes pget 3mm, through design, emulation and optimization, finally can determine that the concrete size of this novel crossed coupling SIW band pass filter is as follows:
Figure DEST_PATH_IMAGE019
10mm
Figure 639840DEST_PATH_IMAGE020
=?47.5mm,?
Figure DEST_PATH_IMAGE021
=?58mm,
Figure 345628DEST_PATH_IMAGE022
21mm, =21.36mm,
Figure 680794DEST_PATH_IMAGE024
=2.73mm,
Figure DEST_PATH_IMAGE025
=0.2mm,
Figure 222765DEST_PATH_IMAGE026
=22.14mm,
Figure DEST_PATH_IMAGE027
=9.9mm,
Figure 301580DEST_PATH_IMAGE028
=9.27mm,
Figure DEST_PATH_IMAGE029
1.4mm,
Figure 861874DEST_PATH_IMAGE030
7.1mm,
Figure DEST_PATH_IMAGE031
=0.5mm,
Figure 446570DEST_PATH_IMAGE032
=6.68mm,
Figure 16 is the whole 3D illustraton of model of this filter, and Figure 18 is the simulation result of this novel crossed coupling SIW band pass filter.
Above simulation result shows:
(1) pass band width is about 280MHz, and in-band insertion loss is less than 0.1dB; Return loss is greater than 20dB;
(2) passband cut-off edge is precipitous,
Figure DEST_PATH_IMAGE033
the time, attenuation outside a channel>30dB;
When realizing the inside and outside superperformance of band, New type of S IW cross-coupled filter compact conformation, be easy to debugging and processing, and range of application is more extensive.

Claims (5)

1. a novel crossed coupling-substrate integrated waveguide band pass filter, comprising: using the rectangle substrate integrated waveguide resonant cavity as the fundamental resonance unit; The plated-through hole (4) that each resonant element is periodically arranged by bottom metal layer (1), top layer metallic layer (3), intermediate medium substrate (2) and four rows surrounds resonant cavity and forms, it is characterized in that: realize magnetic coupling by perceptual window (8) between adjacent resonators, or realize electric coupling by etching snakelike tank (9) on lower metal layer on chamber; Input is with export structure employing co-planar waveguide (7) and input, export 50 ohm microstrip (5,6) directly is connected, and is convenient to realize External Q.
2. novel crossed coupling-substrate integrated waveguide band pass filter according to claim 1, it is characterized in that adjacent resonators and coupled structure are symmetrical, the structure of described magnetic-coupled structure and electric coupling, all be positioned at the center of adjacent two substrate integration wave-guide resonant cavitys, be applicable to the Miniaturization Design of filter.
3. novel crossed coupling-substrate integrated waveguide band pass filter according to claim 1, is characterized in that described dielectric substrate (2) adopts material F 4bM265, each rectangle substrate integrated waveguide resonant cavity bottom metal layer (1) is the metal materials that conduct electricity very well with coats of metal such as top layer metallic layer (3) and plated-through holes (4), reduces filter insertion loss.
4. novel crossed coupling-substrate integrated waveguide band pass filter according to claim 1, the structure that it is characterized in that input and output is to use input, export 50 ohm microstrip (5,6) and directly be connected with co-planar waveguide (7), the simplification complexity.
5. novel crossed coupling-substrate integrated waveguide band pass filter according to claim 1, it is characterized in that described coupling adopts the quadravalence cross coupling structure, by A1, A2, A3, tetra-cross-couplings of A4 form topological structure, the A1 and the A4 cross-couplings that wherein connect respectively input and output have electromechanical coupling characteristic, realize outside band having two transmission zeros, and the cross-couplings between all the other adjacent resonators is the magnetic coupling structure, greatly improved the Out-of-band rejection characteristic of filter, met the high performance requirements of filter, its compact conformation of while, debugging is convenient, processing is simple, can have wide range of applications in the design of filter of low-cost and high-performance.
CN2013101379203A 2013-04-19 2013-04-19 Novel cross coupling substrate integrated waveguide band-pass filter Pending CN103326093A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2013101379203A CN103326093A (en) 2013-04-19 2013-04-19 Novel cross coupling substrate integrated waveguide band-pass filter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2013101379203A CN103326093A (en) 2013-04-19 2013-04-19 Novel cross coupling substrate integrated waveguide band-pass filter

Publications (1)

Publication Number Publication Date
CN103326093A true CN103326093A (en) 2013-09-25

Family

ID=49194717

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2013101379203A Pending CN103326093A (en) 2013-04-19 2013-04-19 Novel cross coupling substrate integrated waveguide band-pass filter

Country Status (1)

Country Link
CN (1) CN103326093A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103515679A (en) * 2013-10-09 2014-01-15 南京理工大学 W wave band high-restrain minitype band-pass filter based on LTCC
CN103647123A (en) * 2013-12-18 2014-03-19 电子科技大学 Half mode substrate integration waveguide horizontal symmetrical filter
CN104733816A (en) * 2015-03-30 2015-06-24 西安电子科技大学 Band-pass filter based on gap waveguide technology
CN105048037A (en) * 2015-07-21 2015-11-11 南京航空航天大学 Micro-strip bandpass filter for loading interdigital trough line structures based on substrate integrated waveguide (SIW)
CN105720340A (en) * 2016-02-19 2016-06-29 南京邮电大学 Compact type band-pass filter containing low-frequency transmission zero
CN105896008A (en) * 2016-04-27 2016-08-24 南京邮电大学 Compact-type band-pass filter comprising transmission zero points at high and low frequencies
CN106207341A (en) * 2016-08-28 2016-12-07 戴永胜 A kind of extremely high frequency SIW cross-coupling band pass filter
CN106410337A (en) * 2016-09-29 2017-02-15 上海航天测控通信研究所 Single-cavity substrate integrated waveguide multi-transmission-zero-point filter
CN108134167A (en) * 2017-12-25 2018-06-08 石家庄创天电子科技有限公司 Substrate integral wave guide filter
CN108428984A (en) * 2018-03-15 2018-08-21 南京邮电大学 The bandpass filter of resonant cavity is integrated based on right angled triangle substrate
CN109301422A (en) * 2018-08-30 2019-02-01 南京理工大学 Model filters power splitter based on half module substrate integrated wave guide
WO2020211287A1 (en) * 2019-04-15 2020-10-22 江苏贝孚德通讯科技股份有限公司 Dielectric filter and 5g communication device
CN112310581A (en) * 2020-08-24 2021-02-02 宿迁博翔教育科技有限公司 5G high-selectivity LTCC band-pass filter based on substrate integrated waveguide
CN112768857A (en) * 2020-12-31 2021-05-07 西安理工大学 Serial six-order substrate integrated waveguide cross-coupling filter
CN114937856A (en) * 2022-06-28 2022-08-23 南京邮电大学 Substrate integrated waveguide band-pass filter based on hybrid electromagnetic coupling
CN115426056A (en) * 2022-10-21 2022-12-02 成都天锐星通科技有限公司 Resonance suppression circuit and electronic product

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1538692A1 (en) * 2003-12-05 2005-06-08 Alcatel Rectangular waveguide filter with extracted poles
CN102800908A (en) * 2012-07-27 2012-11-28 电子科技大学 Dual-mode substrate integrated waveguide source/load mixed coupling filter
CN102891347A (en) * 2012-09-11 2013-01-23 上海航天测控通信研究所 Four-ordered cross-coupled bandpass filter

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1538692A1 (en) * 2003-12-05 2005-06-08 Alcatel Rectangular waveguide filter with extracted poles
CN102800908A (en) * 2012-07-27 2012-11-28 电子科技大学 Dual-mode substrate integrated waveguide source/load mixed coupling filter
CN102891347A (en) * 2012-09-11 2013-01-23 上海航天测控通信研究所 Four-ordered cross-coupled bandpass filter

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103515679B (en) * 2013-10-09 2015-09-30 南京理工大学 Based on the W wave band high-restrain minitype band pass filter of LTCC
CN103515679A (en) * 2013-10-09 2014-01-15 南京理工大学 W wave band high-restrain minitype band-pass filter based on LTCC
CN103647123A (en) * 2013-12-18 2014-03-19 电子科技大学 Half mode substrate integration waveguide horizontal symmetrical filter
CN104733816A (en) * 2015-03-30 2015-06-24 西安电子科技大学 Band-pass filter based on gap waveguide technology
CN104733816B (en) * 2015-03-30 2017-09-15 西安电子科技大学 A kind of bandpass filter based on gap waveguide technology
CN105048037A (en) * 2015-07-21 2015-11-11 南京航空航天大学 Micro-strip bandpass filter for loading interdigital trough line structures based on substrate integrated waveguide (SIW)
CN105720340A (en) * 2016-02-19 2016-06-29 南京邮电大学 Compact type band-pass filter containing low-frequency transmission zero
CN105896008B (en) * 2016-04-27 2018-09-25 南京邮电大学 A kind of equal compact bandpass filter containing transmission zero in high and low frequency
CN105896008A (en) * 2016-04-27 2016-08-24 南京邮电大学 Compact-type band-pass filter comprising transmission zero points at high and low frequencies
CN106207341A (en) * 2016-08-28 2016-12-07 戴永胜 A kind of extremely high frequency SIW cross-coupling band pass filter
CN106410337A (en) * 2016-09-29 2017-02-15 上海航天测控通信研究所 Single-cavity substrate integrated waveguide multi-transmission-zero-point filter
CN108134167A (en) * 2017-12-25 2018-06-08 石家庄创天电子科技有限公司 Substrate integral wave guide filter
CN108134167B (en) * 2017-12-25 2020-02-28 石家庄创天电子科技有限公司 Substrate integrated waveguide filter
CN108428984A (en) * 2018-03-15 2018-08-21 南京邮电大学 The bandpass filter of resonant cavity is integrated based on right angled triangle substrate
CN109301422A (en) * 2018-08-30 2019-02-01 南京理工大学 Model filters power splitter based on half module substrate integrated wave guide
CN109301422B (en) * 2018-08-30 2021-06-11 南京理工大学 Half-mode substrate integrated waveguide-based filtering power divider
WO2020211287A1 (en) * 2019-04-15 2020-10-22 江苏贝孚德通讯科技股份有限公司 Dielectric filter and 5g communication device
CN112310581A (en) * 2020-08-24 2021-02-02 宿迁博翔教育科技有限公司 5G high-selectivity LTCC band-pass filter based on substrate integrated waveguide
CN112768857A (en) * 2020-12-31 2021-05-07 西安理工大学 Serial six-order substrate integrated waveguide cross-coupling filter
CN114937856A (en) * 2022-06-28 2022-08-23 南京邮电大学 Substrate integrated waveguide band-pass filter based on hybrid electromagnetic coupling
CN114937856B (en) * 2022-06-28 2023-12-01 南京邮电大学 Substrate integrated waveguide band-pass filter based on hybrid electromagnetic coupling
CN115426056A (en) * 2022-10-21 2022-12-02 成都天锐星通科技有限公司 Resonance suppression circuit and electronic product
CN115426056B (en) * 2022-10-21 2023-02-28 成都天锐星通科技有限公司 Resonance suppression circuit and electronic product

Similar Documents

Publication Publication Date Title
CN103326093A (en) Novel cross coupling substrate integrated waveguide band-pass filter
CN109301416B (en) Suspended substrate integrated waveguide transmission line
CN106654497B (en) Minimized wide-band slow wave half module substrate integrated wave guide coupler and its design method
CN107146930B (en) Half module substrate integrated wave guide bandpass filter based on S- type complement helical line
CN109830789B (en) Broadband band-pass filter based on folded substrate integrated waveguide and complementary split ring resonator
CN106450608A (en) Open-circuit branch loaded semi-module substrate integrated waveguide band-pass filter
CN110277621A (en) Model filters power splitter based on substrate integration wave-guide
CN109728389A (en) A kind of double stacked formula difference microwave band-pass filter with wide stop band structure
CN104659451B (en) The four modular belt bandpass filters based on 1/3 equilateral triangle substrate integrated resonator
KR100831076B1 (en) Balun-band pass filter using dual-mode ring resonator
CN113764850A (en) Grounded coplanar waveguide-rectangular waveguide filtering transition structure
CN105789810A (en) Broadband halfmode corrugated substrate integrated waveguide coupler and design method thereof
Ferrand et al. LTCC reduced-size bandpass filters based on capacitively loaded cavities for Q band application
Zou et al. Design of an X-band symmetrical window bandpass filter based on substrate integrated waveguide
CN106960995A (en) It is a kind of that there is wide upper stopband and the double mode LTCC bandpass filters of nonopiate feedback
Cao et al. A compact wideband bandpass filter using novel CSRR loaded QMSIW resonator with high selectivity
CN110459847A (en) The interdigital bandpass filter of electromagnetic coupling and design method based on multi-through hole
CN114389002B (en) SIW filtering power divider loaded with complementary stepped folding open ring and design method
Nwajana Analysis and design of a substrate integrated waveguide multi-coupled resonator diplexer
Liu et al. A 35 GHz reduced-size bandpass filter based on SIW in LTCC technology
CN210296585U (en) Single-cavity dual-band microwave filter based on coplanar waveguide
CN209747694U (en) Low-pass filter with complementary split resonant ring and U-shaped groove defected ground
CN107919516B (en) A kind of voltage-controlled resonator of miniaturization substrate integrated coaxial line
Pathak Substrate integrated waveguide based RF MEMS cavity filter
Wei et al. Three‐pole cross‐coupled substrate‐integrated waveguide bandpass filters based on PCB process and multilayer LTCC technology

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130925