CN105048037A - Micro-strip bandpass filter for loading interdigital trough line structures based on substrate integrated waveguide (SIW) - Google Patents
Micro-strip bandpass filter for loading interdigital trough line structures based on substrate integrated waveguide (SIW) Download PDFInfo
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- CN105048037A CN105048037A CN201510430119.7A CN201510430119A CN105048037A CN 105048037 A CN105048037 A CN 105048037A CN 201510430119 A CN201510430119 A CN 201510430119A CN 105048037 A CN105048037 A CN 105048037A
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Abstract
The invention discloses a micro-strip bandpass filter for loading interdigital trough line structures based on a substrate integrated waveguide (SIW). The micro-strip bandpass filter is composed of three adjacent resonators, wherein two columns of plated through holes with a first interdigital trough line in the middle of the plated through holes are shared by the first resonator and the second resonator; two columns of plated through holes with a second double-trough line in the middle of the plated through holes are shared by the second resonator and the third resonator; a first port is formed in the middle of one side of the first resonator; L-shaped trough lines are respectively arranged at two sides of the junction of the first port and the plated through holes; a second port is formed in the middle of the other side of the third resonator; L-shaped trough lines are respectively arranged at two sides of the junction of the second port and the plated through holes; and the first interdigital trough line and the second interdigital trough line are formed by connecting four horizontal trough lines end to end. According to the micro-strip bandpass filter, the selectivity of the filter is improved; and the parasitic transmission band of the filter can be inhibited.
Description
Technical field
The present invention relates to a kind of microwave filter, belong to wireless communication technology field, there is good frequency selectivity and suppress parasitic passband.
Background technology
Along with the development of hyundai electronics science and technology, available frequency spectrum resource growing tension, particularly low section of RF and microwave frequency range can say the stage having arrived and had too many difficulties to cope with, in order to improve message capacity and avoid the interference between adjacent channel, therefore more and more higher to the requirement of filter frequencies selectivity characteristic.This just requires that filter must have precipitous Out-of-band rejection, and can effectively suppress its parasitic passband.Simultaneously in order to meet the demand of Modern Communication System miniaturization, the size of filter is also aobvious particularly important.
Summary of the invention
In order to meet the demand of selectivity higher to filter in communication equipment and more effective parasitic band suppression and more small size, the present invention proposes a kind of microstrip bandpass filter loading interdigital slot line structure based on SIW.The present invention by the following technical solutions.
Load a microstrip bandpass filter for interdigital slot line structure based on SIW, comprise the first row metallization via hole being arranged on and pcb board or LTCC plate are made up of multiple metallization via hole, the second row metallization via hole be made up of multiple metallization via hole, the first row metallization via hole be made up of multiple metallization via hole, the secondary series metallization via hole be made up of multiple metallization via hole, the 3rd row metallization via hole be made up of multiple metallization via hole, the 4th row metallization via hole be made up of multiple metallization via hole, the 5th row metallization via hole be made up of multiple metallization via hole, the 6th row metallization via hole be made up of multiple metallization via hole, the 7th row metallization via hole be made up of multiple metallization via hole, the 8th row metallization via hole be made up of multiple metallization via hole, first port, second port, the one L shape line of rabbet joint, the 2nd L shape line of rabbet joint, the 3rd L shape line of rabbet joint, the 4th L shape line of rabbet joint, the first interdigital line of rabbet joint, the second interdigital line of rabbet joint, first row metallization via hole, second row metallization via hole, first row metallization via hole, secondary series metallization via hole, 3rd row metallization via hole, the cuboid region surrounded between 4th row metallization via hole is a SIW resonator, first row metallization via hole, second row metallization via hole, 3rd row metallization via hole, 4th row metallization via hole, 5th row metallization via hole, the cuboid region surrounded between 6th row metallization via hole is the 2nd SIW resonator, first row metallization via hole, second row metallization via hole, 5th row metallization via hole, 6th row metallization via hole, 7th row metallization via hole, the cuboid region surrounded between 8th row metallization via hole is Three S's IW resonator, a SIW resonator, 2nd SIW resonator, Three S's IW resonator length is in the X-axis direction identical, length is in the Y-axis direction identical, first port is between first row metallization via hole and secondary series metallization via hole, the one L shape line of rabbet joint is between the first port and first row metallization via hole, the 2nd L shape line of rabbet joint is between the first port and secondary series metallization via hole, second port is between the 7th row metallization via hole and the 8th row metallization via hole, the 3rd L shape line of rabbet joint is between the second port and the 7th row metallization via hole, the 4th L shape line of rabbet joint is between the second port and the 8th row metallization via hole, the one L shape line of rabbet joint and the 2nd L shape line of rabbet joint are back-to-back, the 3rd L shape line of rabbet joint and the 4th L shape line of rabbet joint are back-to-back, the first interdigital line of rabbet joint is between the 3rd row metallization via hole and the 4th row metallization via hole, the second interdigital line of rabbet joint is between the 5th row metallization via hole and the 6th row metallization via hole, the first interdigital line of rabbet joint, the second interdigital line of rabbet joint is by four levels and the line of rabbet joint that length is identical is in the X-axis direction in series.
Preferably: the diameter of metallization via hole is identical.
Preferably: the spacing between adjacent metal via hole is identical.
Preferably: a L shape line of rabbet joint and the 2nd L shape line of rabbet joint are about X-axis symmetry, and the 3rd L shape line of rabbet joint and the 4th L shape line of rabbet joint are about X-axis symmetry.
Preferably: a L shape line of rabbet joint and the 3rd L shape line of rabbet joint are about Y-axis symmetry, and the 2nd L shape line of rabbet joint and the 4th L shape line of rabbet joint are about Y-axis symmetry.
Preferably: the first port is output port, the second port is input port or the first port is input port, the second port is output port.
Preferably: the first port is the feeder line of 50 impedance ohms, the second port is the feeder line of 50 impedance ohms.
Preferably: the first interdigital line of rabbet joint, the second interdigital line of rabbet joint self is symmetrical about X-axis.
Preferably: the horizontal slot line self forming the first interdigital line of rabbet joint is symmetrical about the connecting line between the 3rd row metallization via hole and the 4th row metallization via hole, the horizontal slot line self of the second interdigital line of rabbet joint is symmetrical about the connecting line between the 5th row metallization via hole and the 6th row metallization via hole.
Beneficial effect: described a kind of microstrip bandpass filter loading interdigital slot line structure based on SIW can the transmission zero of flexible by loading the interdigital line of rabbet joint realize not increasing additional volumes directly over coupling window and making the filter of rectilinear topology create two by hybrid electromagnetic coupling, improve the selectivity of filter, and its parasitic passband can be suppressed, total is compact, is easy to processing.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of printed circuit board (PCB).
Fig. 2 is filter schematic top plan view.
Fig. 3 is the scattering parameter simulate and test result of filter.
Reference numeral title is as follows:
1, first row metallization via hole; 2, second row metallization via hole; 3, first row metallization via hole; 4, secondary series metallization via hole; 5, the 3rd row metallization via hole; 6, the 4th row metallization via hole; 7, the 5th row metallization via hole; 8, the 6th row metallization via hole; 9, the 7th row metallization via hole; 10, the 8th row metallization via hole; 11, the first port; 12, the second port; 13, a L shape line of rabbet joint; 14, the 2nd L shape line of rabbet joint; 15, the 3rd L shape line of rabbet joint; 16, the 4th L shape line of rabbet joint; 17, the first interdigital line of rabbet joint; 18, the second interdigital line of rabbet joint; 19, medium substrate; 20, substrate upper strata metal; 21, substrate lower metal.
Embodiment
Be described in further detail below in conjunction with the enforcement of accompanying drawing to technical scheme.
A kind of microstrip bandpass filter loading interdigital slot line structure based on SIW adopts relative dielectric constant to be 2.2, thickness be the pcb board of 0.508mm as substrate, the pcb board of other specifications or LTCC plate also can be adopted as substrate.As shown in Figure 1, pcb board is made up of medium substrate 19, substrate upper strata metal 20, substrate lower metal 21.The upper surface of medium substrate 19 is pasted or be printed on to substrate upper strata metal 20, and the lower surface of medium substrate 19 is pasted or be printed on to substrate lower metal 21.
The forward edge of pcb board is provided with the first row metallization via hole 1 be made up of multiple metallization via hole, posterior edges is provided with the second row metallization via hole 2 be made up of multiple metallization via hole, left side is provided with the first row metallization via hole 3 be made up of multiple metallization via hole and the secondary series metallization via hole 4 be made up of multiple metallization via hole, right side is provided with the 7th row metallization via hole 9 be made up of multiple metallization via hole and the 8th row metallization via hole 10 be made up of multiple metallization via hole.The 3rd row metallization via hole 5 be made up of multiple metallization via hole, the 5th row metallization via hole 7 be made up of multiple metallization via hole is also provided with between first row metallization via hole 3 and the 7th row metallization via hole 9.The 4th row metallization via hole 6 be made up of multiple metallization via hole, the 6th row metallization via hole 8 be made up of multiple metallization via hole is also provided with between secondary series metallization via hole 4 and the 8th row metallization via hole 10.
First row metallization via hole 1, second row metallization via hole 2, first row metallization via hole 3, secondary series metallization via hole 4, 3rd row metallization via hole 5, the cuboid region that 4th row metallization via hole 6 surrounds is a SIW resonator, first row metallization via hole 1, second row metallization via hole 2, 3rd row metallization via hole 5, 4th row metallization via hole 6, 5th row metallization via hole 7, the cuboid region that 6th row metallization via hole 8 surrounds is the 2nd SIW resonator, first row metallization via hole 1, second row metallization via hole 2, 5th row metallization via hole 7, 6th row metallization via hole 8, 7th row metallization via hole 9, the cuboid region that 8th row metallization via hole 10 surrounds is Three S's IW resonator, one SIW resonator, 2nd SIW resonator, Three S's IW resonator length is in the X-axis direction identical, length is in the Y-axis direction identical, that is a SIW resonator, 2nd SIW resonator, the shape of Three S's IW resonator is identical.
First port 11 is positioned in the middle of first row metallization via hole 3 and secondary series metallization via hole 4, and that is the side of a SIW resonator is middle is provided with the first port.Second port one 2 is positioned in the middle of the 7th row metallization via hole 9 and the 8th row metallization via hole 10, and that is the centre of the 2nd SIW resonator opposite side is provided with the second port.First port 11 is input port, and the second port one 2 is output port.Can certainly be the first port 11 be output port, the second port one 2 be input port.First port 11 is the feeder line of impedance 50 ohm, and the second port one 2 is the feeder line of impedance 50 ohm.First port 11 and the second port one 2 all adopt SMA head to weld, so that access is tested or is connected with circuit.
First port 11 and first row metallize and to be provided with the L shape line of rabbet joint 13, first port 11 and secondary series between via hole 3 and to metallize and be provided with the 2nd L shape line of rabbet joint the 14, one L shape line of rabbet joint 13 between via hole 4 and the 2nd L shape line of rabbet joint 14 is symmetrical about X-axis.Second port one 2 and the 7th arranges to metallize and to be provided with the 3rd L shape line of rabbet joint 15, second port one 2 and the 8th between via hole 9 and to arrange to metallize and be provided with the 4th L shape line of rabbet joint the 16, three L shape line of rabbet joint 15 between via hole 10 and the 4th L shape line of rabbet joint 16 is symmetrical about X-axis.The one L shape line of rabbet joint 13 and the 3rd L shape line of rabbet joint 15 are about Y-axis symmetry, and the 2nd L shape line of rabbet joint 14 and the 4th L shape line of rabbet joint 16 are about Y-axis symmetry.Back-to-back, the 3rd L shape line of rabbet joint 15 and the 4th L shape line of rabbet joint 16 are back-to-back for the one L shape line of rabbet joint 13 and the 2nd L shape line of rabbet joint 14.The one L shape line of rabbet joint the 13, the 2nd L shape line of rabbet joint, the 3rd L shape line of rabbet joint the 15, the 4th L shape line of rabbet joint 16 are formed by connecting by two articles of orthogonal line of rabbet joint, and wherein a line of rabbet joint is parallel with X-axis, and another line of rabbet joint is parallel with Y-axis.The one L shape line of rabbet joint 13 and the parallel line of rabbet joint of X-axis metallize between via hole 3 at the first port 11 and first row, and the parallel line of rabbet joint of Y-axis is between first row metallization via hole 3 and the 3rd row metallization via hole 5.The 2nd L shape line of rabbet joint 14 and the parallel line of rabbet joint of X-axis metallize between via hole 4 at the first port 11 and secondary series, and the parallel line of rabbet joint of Y-axis is between secondary series metallization via hole 4 and the 4th row metallization via hole 6.The 3rd L shape line of rabbet joint 15 and the parallel line of rabbet joint of X-axis are between the second port one 2 and the 7th row metallization via hole 9, and the parallel line of rabbet joint of Y-axis is between the 5th row metallization via hole 7 and the 7th row metallization via hole 9.The 4th L shape line of rabbet joint 16 and the parallel line of rabbet joint of X-axis are between the second port one 2 and the 8th row metallization via hole 10, and the parallel line of rabbet joint of Y-axis is between the 6th row metallization via hole 8 and the 8th row metallization via hole 10.
The interdigital line of rabbet joint 17 of the first interdigital line of rabbet joint 17, first being provided with horizontal positioned in the centre that the 3rd row metallization via hole 5 and the 4th arranges the via hole 6 that metallizes is slotted at substrate upper strata metal 20.Between 3rd row metallization via hole 5, the 4th row metallization via hole 6, the gap namely in Y direction forms the first inductive coupled window.The interdigital line of rabbet joint 18 of the second interdigital line of rabbet joint 18, second being provided with horizontal positioned in the centre that the 5th row metallization via hole 7 and the 6th arranges the via hole 8 that metallizes is slotted at substrate upper strata metal 20.Between 5th row metallization via hole 7, the 6th row metallization via hole 8, the gap namely in Y direction forms the second inductive coupled window.The first interdigital line of rabbet joint 17, the second interdigital line of rabbet joint 18 self is symmetrical about X-axis.The interdigital line of rabbet joint 18 of the first interdigital line of rabbet joint 17, second is all connected by four horizontal slot line being parallel to X-axis to be formed.The horizontal slot line self forming the first interdigital line of rabbet joint 17 is symmetrical about the connecting line between the 3rd row metallization via hole 5 and the 4th row metallization via hole 6, and the horizontal slot line self forming the second interdigital line of rabbet joint 18 is symmetrical about the connecting line between the 5th row metallization via hole 7 and the 6th row metallization via hole 8.That is the center and the 3rd of the first interdigital line of rabbet joint 17 arranges the via hole 5 and the 4th that metallizes and arranges the connecting line center of metallizing between via hole 6 and coincide, and the center and the 5th of the second interdigital line of rabbet joint 18 arranges the via hole 7 and the 6th that metallizes and arranges the connecting line center of metallizing between via hole 8 and coincide.The first interdigital line of rabbet joint 17 length is in the Y-axis direction less than the first inductive coupled length of window, and the second interdigital line of rabbet joint 18 length is in the Y-axis direction less than the second inductive coupled length of window.
Spacing in first row metallization via hole 3, secondary series metallization via hole 4, the 3rd row metallization via hole 5, the 4th row metallization via hole 6, the 5th row metallization via hole 7, the 6th row metallization via hole 8, the 7th row metallization via hole 9, the 8th row metallization via hole 10 between adjacent metal via hole is identical and aperture that is metallization via hole is identical.
One SIW resonator, the 2nd SIW resonator, Three S's IW resonator are cuboid, be loaded with directly over the first inductive coupled window that accompanying drawing can be found out between a SIW resonator and the 2nd SIW resonator directly over the second inductive coupled window between the first interdigital line of rabbet joint the 17, two SIW resonator and Three S's IW resonator and be loaded with the second interdigital line of rabbet joint 18.
The first interdigital line of rabbet joint 17 can introduce electric coupling between a SIW resonator and the 2nd SIW resonator, the first inductive coupled window between one SIW resonator and the 2nd SIW resonator can be introduced inductive coupled between two resonators, hybrid electromagnetic coupling is defined between such SIW resonator and the 2nd SIW resonator, thus first transmission zero is produced, the position of transmission zero is determined by electric coupling and magnetic-coupled ratio, and coupling strength determines primarily of the length of the first inductive coupled window in Y direction, electric coupling determines primarily of the length of the interdigital line of rabbet joint 17 of formation first along four line of rabbet joint of X-direction, therefore the position of transmission zero and the first inductive coupled window between a SIW resonator and the 2nd SIW resonator determine jointly in the length of Y direction and the first interdigital line of rabbet joint 17 length along X-direction, the position of transmission zero can be regulated along the length of X-direction by regulating the first interdigital line of rabbet joint 17.
The second interdigital line of rabbet joint 18 can introduce electric coupling between the 2nd SIW resonator and Three S's IW resonator, the second inductive coupled window between 2nd SIW resonator and Three S's IW resonator can be introduced inductive coupled between two resonators, hybrid electromagnetic coupling is defined between such 2nd SIW resonator and Three S's IW resonator, thus second transmission zero is produced, the position of transmission zero is determined by electric coupling and magnetic-coupled ratio, and coupling strength determines primarily of the length of the second inductive coupled window in Y direction, electric coupling determines primarily of the length of the interdigital line of rabbet joint 18 of formation second along four line of rabbet joint of X-direction, therefore the position of transmission zero and the second inductive coupled window between the 2nd SIW resonator and Three S's IW resonator determine jointly in the length of Y direction and the second interdigital line of rabbet joint 18 length along X-direction, the position of transmission zero can be regulated along the length of X-direction by regulating the second interdigital line of rabbet joint 18.When the position adjustments of transmission zero can destroy parasitic passband to during parasitic passband, play the effect suppressing parasitic passband, when the position adjustments of transmission zero is to the selectivity that can improve filter during near pass-band.
The design of filter adopts comprehensive designing method, specific as follows: the first step, according to the operating frequency of filter, design SIW resonator, being decided by the size of adjustment SIW resonator cavities in X direction with along Y-direction, namely by stamping metallization via hole in position, making SIW resonator resonance on the operating frequency point needed, final each SIW resonator cavities is along the long 26mm of Y-direction, in X direction long 22.8mm.Second step, decides according to External Q, by regulating the L shape line of rabbet joint the 13, the 2nd L shape line of rabbet joint the 14, the 3rd L shape line of rabbet joint the 15, a 4th L shape line of rabbet joint 16 to regulate resonator to be coupled with outside in X direction with the length of Y-direction, namely regulates External Q.3rd step, regulates the size of inductive coupled window according to the coupling coefficient between resonator, such three rank SIW microstrip bandpass filters can complete.4th step, loads the interdigital line of rabbet joint 18 of the first interdigital line of rabbet joint 17, second respectively directly over two inductive coupled windows, comes the position at controls transfer zero point by regulating the interdigital line of rabbet joint 18 of the first interdigital line of rabbet joint 17, second along the length of X-direction.
The filter proposed in the present embodiment is symmetrical about X-axis, except the outer remainder of the first interdigital line of rabbet joint 17, the second interdigital line of rabbet joint 18 is also symmetrical about Y-axis.The upper strata of filter comprises microstrip line and turns coplanar wave guide feedback structure, interdigital slot line structure, and microstrip line comprises the first port 11, second port one 2.The length being parallel to four articles of line of rabbet joint of X-axis forming the firstth interdigital line of rabbet joint 17 is all 5.5mm; The length being parallel to four line of rabbet joint in X-direction forming the second interdigital line of rabbet joint 18 is all 6mm.The first inductive coupled window between first and second SIW resonator is 6.26mm in the length of Y direction, and described first inductive coupled window refers to the distance between the 3rd row metallization via hole 5, the 4th row metallization via hole 6 in the length of Y direction; Between second and Three S's IW resonator second inductive coupled window is 6.04mm in the length of Y direction, and described second inductive coupled window refers to the distance between the 5th row metallization via hole 7, the 6th row metallization via hole 8 in the length of Y direction; The interdigital line of rabbet joint 18 of the first interdigital line of rabbet joint 17, second in the X-axis direction the length position that determines two transmission zeros be 6.64GHz and 7.2GHz, invention increases the selectivity of filter.
The medium substrate of filter comprises multiple metallization via hole, and via diameter is 0.6mm, and pitch of holes is 1mm.The length along Y direction of coupling window can affect the bandwidth of passband.The lower floor of filter is covered completely by metallic copper, as the ground of whole filter.
As shown in Figure 3, the emulation of the scattering parameter of filter of the present invention and measured result (emulate what adopts is HFSS software, and what test employing is Agilent N5230C vector network analyzer).The centre frequency of described filter is 5.8GHz, its 10dB relative bandwidth is 2%, as we can see from the figure emulation and measured result substantially identical, wherein the insertion loss of measure error is slightly bigger than normal is come from mismachining tolerance and the radiation loss of slotted line in test process.
The above is only the preferred embodiment of the present invention, it should be pointed out that for those skilled in the art, can also make some improvement under the premise without departing from the principles of the invention, and these improvement also should be considered as protection scope of the present invention.
Claims (9)
1. load a microstrip bandpass filter for interdigital slot line structure based on SIW, it is characterized in that: comprise first row metallization via hole (1) being arranged on and pcb board or LTCC plate are made up of multiple metallization via hole, second row metallization via hole (2) be made up of multiple metallization via hole, first row metallization via hole (3) be made up of multiple metallization via hole, secondary series metallization via hole (4) be made up of multiple metallization via hole, the 3rd row metallization via hole (5) be made up of multiple metallization via hole, the 4th row metallization via hole (6) be made up of multiple metallization via hole, the 5th row metallization via hole (7) be made up of multiple metallization via hole, the 6th row metallization via hole (8) be made up of multiple metallization via hole, the 7th row metallization via hole (9) be made up of multiple metallization via hole, the 8th row metallization via hole (10) be made up of multiple metallization via hole, first port (11), second port (12), the one L shape line of rabbet joint (13), the 2nd L shape line of rabbet joint (14), the 3rd L shape line of rabbet joint (15), the 4th L shape line of rabbet joint (16), the first interdigital line of rabbet joint (17), the second interdigital line of rabbet joint (18), first row metallization via hole (1), second row metallization via hole (2), first row metallization via hole (3), secondary series metallization via hole (4), 3rd row metallization via hole (5), the cuboid region surrounded between 4th row metallization via hole (6) is a SIW resonator, first row metallization via hole (1), second row metallization via hole (2), 3rd row metallization via hole (5), 4th row metallization via hole (6), 5th row metallization via hole (7), the cuboid region surrounded between 6th row metallization via hole (8) is the 2nd SIW resonator, first row metallization via hole (1), second row metallization via hole (2), 5th row metallization via hole (7), 6th row metallization via hole (8), 7th row metallization via hole (9), the cuboid region surrounded between 8th row metallization via hole (10) is Three S's IW resonator, a SIW resonator, 2nd SIW resonator, Three S's IW resonator length is in the X-axis direction identical, length is in the Y-axis direction identical, first port (11) is positioned between first row metallization via hole (3) and secondary series metallization via hole (4), the one L shape line of rabbet joint (13) is positioned between the first port (11) and first row metallization via hole (3), the 2nd L shape line of rabbet joint (14) is positioned between the first port (11) and secondary series metallization via hole (4), second port (12) is positioned between the 7th row metallization via hole (9) and the 8th row metallization via hole (10), the 3rd L shape line of rabbet joint (15) is positioned between the second port (12) and the 7th row metallization via hole (9), the 4th L shape line of rabbet joint (16) is positioned between the second port (12) and the 8th row metallization via hole (10), the one L shape line of rabbet joint (13) and the 2nd L shape line of rabbet joint (14) are back-to-back, the 3rd L shape line of rabbet joint (15) and the 4th L shape line of rabbet joint (16) are back-to-back, the first interdigital line of rabbet joint (17) is positioned between the 3rd row metallization via hole (5) and the 4th row metallization via hole (6), the second interdigital line of rabbet joint (18) is positioned between the 5th row metallization via hole (7) and the 6th row metallization via hole (8), the first interdigital line of rabbet joint (17), the second interdigital line of rabbet joint (18) is by four levels and the line of rabbet joint that length is identical is in the X-axis direction in series.
2. microstrip bandpass filter according to claim 1, is characterized in that: the diameter of all metallization via holes is identical.
3. microstrip bandpass filter according to claim 1, is characterized in that: the spacing between adjacent metal via hole is identical.
4. microstrip bandpass filter according to claim 1, is characterized in that: a L shape line of rabbet joint (13) and the 2nd L shape line of rabbet joint (14) are about X-axis symmetry, and the 3rd L shape line of rabbet joint (15) and the 4th L shape line of rabbet joint (16) are about X-axis symmetry.
5. microstrip bandpass filter according to claim 1, is characterized in that: a L shape line of rabbet joint (13) and the 3rd L shape line of rabbet joint (15) are about Y-axis symmetry, and the 2nd L shape line of rabbet joint (14) and the 4th L shape line of rabbet joint (16) are about Y-axis symmetry.
6. microstrip bandpass filter according to claim 1, is characterized in that: the first port (11) is output port, the second port (12) for input port or the first port (11) be input port, the second port (12) is output port.
7. microstrip bandpass filter according to claim 1, is characterized in that: the first port (11) is the feeder line of impedance 50 ohm, and the second port (12) is the feeder line of impedance 50 ohm.
8. microstrip bandpass filter according to claim 1, is characterized in that: the first interdigital line of rabbet joint (17), the second interdigital line of rabbet joint (18) self is symmetrical about X-axis.
9. microstrip bandpass filter according to claim 1, it is characterized in that: the horizontal slot line self forming the first interdigital line of rabbet joint (17) is symmetrical about the connecting line between the 3rd row metallization via hole (5) and the 4th row metallization via hole (6), the horizontal slot line self forming the second interdigital line of rabbet joint (18) is symmetrical about the connecting line between the 5th row metallization via hole (7) and the 6th row metallization via hole (8).
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109786907A (en) * | 2019-02-18 | 2019-05-21 | 摩比科技（深圳）有限公司 | The capacitive coupling structure and cavity body filter of cavity body filter |
| CN110943274A (en) * | 2018-09-25 | 2020-03-31 | 西安邮电大学 | LCP-based SIW band-pass filter structure |
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| CN110943274A (en) * | 2018-09-25 | 2020-03-31 | 西安邮电大学 | LCP-based SIW band-pass filter structure |
| CN109786907A (en) * | 2019-02-18 | 2019-05-21 | 摩比科技（深圳）有限公司 | The capacitive coupling structure and cavity body filter of cavity body filter |
| CN109786907B (en) * | 2019-02-18 | 2020-05-19 | 摩比科技（深圳）有限公司 | Capacitive coupling structure of cavity filter and cavity filter |
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