CN112072223A - Negative slope frequency dependence coupling structure and cross-coupling SIW band-pass filter - Google Patents
Negative slope frequency dependence coupling structure and cross-coupling SIW band-pass filter Download PDFInfo
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- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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- H01P1/20—Frequency-selective devices, e.g. filters
Abstract
The invention belongs to the technical field of microwaves, and particularly relates to a negative slope frequency correlation coupling structure and a cross-coupling SIW band-pass filter, wherein the negative slope frequency correlation coupling structure comprises two short-circuit coplanar waveguides and a magnetic coupling window with controllable size; etching two short-circuit coplanar waveguides which are coupled up and down on the SIW transmission line, additionally arranging a first metal through hole at the open end of each short-circuit coplanar waveguide, arranging a coupling gap between the two short-circuit coplanar waveguides, and additionally arranging a second metal through hole near the two short-circuit coplanar waveguides to control the size of a magnetic coupling window. The negative slope frequency correlation coupling structure has good plane integratable characteristic and low loss characteristic, and the cross-coupling SIW band-pass filter realizes the configuration of two FTZs or three FTZs according to the position requirement.
Description
Technical Field
The invention belongs to the technical field of microwaves, and particularly relates to a negative slope frequency correlation coupling structure and a cross-coupling SIW band-pass filter.
Background
Substrate Integrated Waveguide (SIW) has the advantages of planar integration, high power capacity, high no-load quality factor and the like, and becomes a hot spot for designing and researching microwave filters. SIW filters can achieve smaller insertion loss and higher power capacity relative to microstrip filters and therefore play an important role in the design of integratable planar microwave filters.
To improve the selectivity of the passband of the filter, Finite Transmission Zeros (FTZs) are usually added on both sides of the passband. There are three main methods for implementing FTZ: the first is that multi-path energy transmission is realized by adding cross coupling paths; secondly, pole extraction technology is adopted; thirdly, frequency dependent coupling is used.
By adding correlation coupling paths in the design of the traditional cross-coupling filter, a larger number of FTZs can be realized, and thus, the method is widely researched and applied. According to the characteristic that the coupling coefficient changes along with the frequency, the coupling coefficient can be divided into two types: a positive slope and a negative slope. In general, positive slope frequency dependent coupling is easy to implement, whereas negative slope is difficult to implement.
In designing a cross-coupled filter, the coupling coefficients of positive and negative slopes determine the distribution characteristics of the FTZs, such as documents "l.szydlowski, a.jodrzejewski and m.mrozowski," a three section filter design with a negative slope of frequency-dependent cross-coupling estimated in sub-structured wave guide (SIW), "IEEE Microwave and Wireless Components Letters, vol.23, No.9, pp.456-458, and sept.2013", but the coupling structure needs to etch a gap on the upper and lower surfaces of the dielectric plate, which results in the practical application of the filter, and suspension is not beneficial to circuit integration. Further, the documents "q.liu, d.zhou, d.zhang and d.lv," a novel frequency-dependent coupling with flexible controllable slots and its applications on substrate-integrated waveguide filters, "IEEE Microwave and Wireless Components Letters, vol.28, No.11, pp.993-995,112018" show a frequency-dependent coupling structure that only needs to etch a slot on the surface of the dielectric plate, which can achieve a negative slope characteristic. But the coupling structure is realized by mutually coupling two open-circuit coplanar waveguides, and the loss is increased at the open-circuit end of the coupling structure.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a negative slope frequency correlation coupling structure and a cross-coupling SIW band-pass filter, wherein the negative slope frequency correlation coupling structure has good plane integratable characteristic and low loss characteristic, and the cross-coupling SIW band-pass filter realizes the configuration of two FTZs or three FTZs according to the needs.
In order to solve the technical problems, the invention adopts the following technical scheme:
the invention provides a negative slope frequency correlation coupling structure, which comprises two short-circuit coplanar waveguides and a magnetic coupling window with controllable size; etching two short-circuit coplanar waveguides which are coupled up and down on the SIW transmission line, additionally arranging a first metal through hole at the open end of each short-circuit coplanar waveguide, arranging a coupling gap between the two short-circuit coplanar waveguides, and additionally arranging a second metal through hole near the two short-circuit coplanar waveguides to control the size of a magnetic coupling window.
Furthermore, the size of the two mutually coupled short-circuit coplanar waveguides, the size of the coupling gap and the size of the magnetic coupling window are controlled, and then the characteristic of negative slope frequency-dependent coupling is controlled.
Further, the negative slope frequency-dependent coupling structure is equivalent to an impedance transformer K and a normalized impedance transformer K/Z which change along with the frequency0The calculation is performed by equation (1):
wherein Z is0Representing the characteristic impedance, S, of the SIW transmission line21Representing the transmission coefficient, S, of the SIW transmission line11Denotes the reflection coefficient of the SIW transmission line, and j denotes a complex number.
The invention also provides a third-order cross-coupled SIW band-pass filter, which comprises three SIW resonators, a negative slope frequency correlation coupling structure and an input/output feeder line, wherein the input/output feeder line is connected with the SIW resonators, and the three SIW resonators are in a triangle structure and are mutually coupled.
Further, the three SIW resonators are a first SIW resonator, a second SIW resonator and a third SIW resonator from left bottom, top and right bottom in sequence;
the third-order cross-coupled SIW band-pass filter is equivalent to a two-port circuit coupling topological structure, the first SIW resonator is marked as a resonant node 1, the second SIW resonator is marked as a resonant node 2, and the third SIW resonator is marked as a resonant node 3.
Further, the second SIW resonator is coupled with the first SIW resonator and the third SIW resonator respectively through coupling windows to form a main coupling path 1-2-3; the first SIW resonator and the third SIW resonator are coupled through a negative slope frequency-dependent coupling structure to form coupling paths 1-3.
Furthermore, the input and output feeder line adopts a microstrip feeder line, the input feeder line is connected with the first SIW resonator, and the output feeder line is connected with the third SIW resonator.
The invention also provides a four-order cross-coupled SIW band-pass filter, which comprises four SIW resonators, two negative slope frequency correlation coupling structures according to any one of claims 1 to 3 and input and output feeder lines, wherein the input and output feeder lines are connected with the SIW resonators, and the four SIW resonators are in a grid-shaped structure and are mutually coupled.
Further, the four SIW resonators are a first SIW resonator, a second SIW resonator, a third SIW resonator and a fourth SIW resonator from left lower, left upper, right upper and right lower in sequence;
the four-order cross-coupled SIW band-pass filter is equivalent to a two-port circuit coupling topological structure, the first SIW resonator is marked as a resonant node 1, the second SIW resonator is marked as a resonant node 2, the third SIW resonator is marked as a resonant node 3, and the fourth SIW resonator is marked as a resonant node 4.
Further, the second SIW resonator is coupled with the first SIW resonator through a coupling window to form a main coupling path 1-2; the third SIW resonator and the fourth SIW resonator are coupled through a coupling window to form a main coupling path 3-4; the second SIW resonator and the third SIW resonator are coupled through a negative slope frequency dependence coupling structure to form a coupling path 2-3; the first SIW resonator and the fourth SIW resonator are coupled through a negative slope frequency dependence coupling structure to form a coupling path 1-4;
the input feeder line and the output feeder line are microstrip feeder lines, the input feeder line is connected with the first SIW resonator, and the output feeder line is connected with the fourth SIW resonator.
Compared with the prior art, the invention has the following advantages:
1. the negative slope frequency dependence coupling structure does not need to be suspended in the application of the filter, and has good planar integratable characteristic. The negative slope frequency correlation coupling structure effectively reduces radiation loss by utilizing the terminal short circuit characteristic, thereby realizing lower loss characteristic.
2. The negative slope frequency correlation coupling structure realizes the free control of the slope, the strength and the zero position of the negative slope coupling coefficient by controlling the size of two mutually coupled short-circuit coplanar waveguides, the size of a coupling gap and the size of a magnetic coupling window, and further realizes the configuration of the FTZs position of the cross-coupling SIW band-pass filter according to the requirement. Compared with the traditional cross-coupling filter, the invention can realize additional FTZ, thereby improving the passband selectivity and the stop band rejection characteristic of the filter.
3. Compared with a microstrip line filter, the microstrip line filter has the electromagnetic shielding effect, can inhibit electromagnetic energy from radiating outwards, and has the characteristics of stronger anti-interference capability and higher power capacity.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic diagram of a negative slope frequency-dependent coupling structure according to a first embodiment of the present invention;
FIG. 2 is an equivalent circuit diagram of a negative slope frequency-dependent coupling structure according to a first embodiment of the present invention;
FIG. 3 is a simulation curve of the slope characteristic of the negative slope frequency-dependent coupling structure controlled by the negative slope frequency-dependent coupling structure according to the first embodiment of the present invention;
FIG. 4 is a simulation curve of the negative slope frequency-dependent coupling structure controlling the zero position thereof according to the first embodiment of the present invention;
fig. 5 is a schematic plane structure diagram of a third-order cross-coupled SIW band-pass filter according to a second embodiment of the present invention;
fig. 6 is a scattering parameter simulation and test curve of a third-order cross-coupled SIW band-pass filter according to a second embodiment of the present invention;
FIG. 7 is a broadband test curve of a third-order cross-coupled SIW band-pass filter according to a second embodiment of the present invention;
fig. 8 is a schematic plan view of a fourth-order cross-coupled SIW band-pass filter according to a third embodiment of the present invention;
fig. 9 is a scattering parameter simulation and test curve of a fourth-order cross-coupled SIW band-pass filter according to a third embodiment of the present invention;
fig. 10 is a broadband test curve of a fourth-order cross-coupled SIW bandpass filter according to a third embodiment of the invention.
The reference numbers in the figures denote:
1. the resonator comprises a short-circuit coplanar waveguide, 2. a first metal via hole, 3. a coupling slot, 4. a second metal via hole, 5. a first SIW resonator, 6. a second SIW resonator, 7. a third SIW resonator, 8. a fourth SIW resonator, 9. an input feeder and 10. an output feeder.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer and more complete, the technical solutions in the embodiments of the present invention will be described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention, and based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts belong to the scope of the present invention.
Example one
In the negative slope frequency-dependent coupling structure of the present embodiment, as shown in fig. 1, the structure includes two short-circuited coplanar waveguides and a magnetic coupling window with controllable size, the two short-circuited coplanar waveguides coupled with each other up and down are etched on the SIW transmission line, and a first metal via hole is added at the open end of the short-circuited coplanar waveguides to form two short-circuited coplanar waveguides coupled with each other; a coupling gap is formed between the two short-circuit coplanar waveguides; and a second metal through hole is added near the two short-circuit coplanar waveguides to control the size of the magnetic coupling window. The characteristic of negative slope frequency-dependent coupling is further controlled by controlling the size of the two mutually coupled short-circuit coplanar waveguides, the size of the coupling gap and the size of the magnetic coupling window.
The negative slope frequency-dependent coupling structure of this embodiment can be equivalent to an impedance transformer K varying with frequency, as shown in FIG. 2, a normalized impedance transformer K/Z0The calculation can be made from equation (1):
wherein Z is0Representing the characteristic impedance, S, of the SIW transmission line21Representing the transmission coefficient, S, of the SIW transmission line11Denotes the reflection coefficient of the SIW transmission line, and j denotes a complex number.
FIG. 3 shows a simulation curve of the slope characteristic of the negative slope frequency-dependent coupling structure of the present embodiment, which shows that the lengths L of the two short-circuited coplanar waveguides1Coupling gap g between two short-circuited coplanar waveguides2And size g of the magnetic coupling window3The slope and strength of the negative slope coupling coefficient are controlled together.
FIG. 4 shows a simulation curve of the negative slope frequency-dependent coupling structure of the present embodiment controlling the zero point position thereof, which shows that the lengths L of the two short-circuited coplanar waveguides1Coupling gap g between two short-circuited coplanar waveguides2And size g of the magnetic coupling window3The zero positions of the negative slope coupling coefficients are controlled together.
The negative slope frequency-dependent coupling structure of the embodiment realizes the free control of the slope, the strength and the zero point position of the negative slope coupling coefficient by controlling the size of the two mutually coupled short-circuit coplanar waveguides, the size of the coupling gap and the size of the magnetic coupling window.
Example two
As shown in fig. 5, the third-order cross-coupled SIW band-pass filter of this embodiment includes three SIW resonators, a negative slope frequency-dependent coupling structure and an input/output feeder line, where the input/output feeder line is connected to the SIW resonators, and the three SIW resonators are in a delta-shaped structure and are coupled to each other.
The three SIW resonators are a first SIW resonator, a second SIW resonator and a third SIW resonator from left bottom, top and right bottom in sequence, a plurality of metal through holes are arranged at the edges of the three SIW resonators, preferably, the diameters of the metal through holes are all 0.6mm, and the distance between every two adjacent metal through holes is 1 mm. The third-order cross-coupled SIW band-pass filter is equivalent to a two-port circuit coupling topological structure, the first SIW resonator is marked as a resonant node 1, the second SIW resonator is marked as a resonant node 2, and the third SIW resonator is marked as a resonant node 3.
The second SIW resonator is coupled to the first SIW resonator and the third SIW resonator, respectively, through coupling windows forming the primary coupling paths 1-2-3. The first SIW resonator and the third SIW resonator are coupled through a negative slope frequency-dependent coupling structure to form a coupling path 1-3, a coupling coefficient changing along with frequency is formed on the coupling path 1-3, and the third-order cross-coupling SIW band-pass filter can realize two FTZs with controllable positions. The input and output feeder adopts a microstrip feeder, the input feeder is connected with the first SIW resonator, the output feeder is connected with the third SIW resonator, the width of the microstrip feeder is 1.54mm, the input and output feeders are led out from two feed ports, the two feed ports are a coplanar waveguide structure converted from a 50-ohm microstrip line, and the gap width g of the coplanar waveguide structure is0＝0.25mm。
Fig. 6 shows the scattering parameter simulation and test results of the third-order cross-coupled SIW band-pass filter of the present embodiment, and the measured center frequency is 10.023GHz, the 1dB bandwidth is 295MHz (relative bandwidth is 2.94%), the loss in the pass band is 1.79dB, and the reflection loss in the pass band is 15.93 dB. The two FTZs were measured at 10.317GHz and 12.06GHz, respectively. The third-order cross-coupling SIW band-pass filter of the embodiment realizes two finite frequency transmission zeros above the pass band, which shows that the filter has good selectivity above the pass band and rejection characteristics above the stop band.
Fig. 7 shows the result of testing the broadband of the third-order cross-coupled SIW band-pass filter of the present embodiment, and an additional FTZ is measured at 7.5GHz, which further improves the rejection level of the lower stop band of the filter.
EXAMPLE III
As shown in fig. 8, the four-step cross-coupled SIW band-pass filter of this embodiment includes four SIW resonators, two negative slope frequency-dependent coupling structures as described in the first embodiment, and an input/output feeder line, where the input/output feeder line is connected to the SIW resonators, and the four SIW resonators are in a grid-shaped structure and are coupled to each other.
The four SIW resonators are a first SIW resonator, a second SIW resonator, a third SIW resonator and a fourth SIW resonator from left bottom, left top, right top and right bottom in sequence, a plurality of metal through holes are arranged at the edges of the four SIW resonators, preferably, the diameters of the metal through holes are all 0.6mm, and the distance between every two adjacent metal through holes is 1 mm; the four-order cross-coupled SIW band-pass filter is equivalent to a two-port circuit coupling topology structure, the first SIW resonator is denoted as a resonant node 1, the second SIW resonator is denoted as a resonant node 2, the third SIW resonator is denoted as a resonant node 3, and the fourth SIW resonator is denoted as a resonant node 4.
The second SIW resonator is coupled with the first SIW resonator through a coupling window to form a main coupling path 1-2, the third SIW resonator is coupled with the fourth SIW resonator through the coupling window to form a main coupling path 3-4, the second SIW resonator is coupled with the third SIW resonator through a negative slope frequency correlation coupling structure to form a coupling path 2-3, a coupling coefficient changing along with frequency is formed on the coupling path 2-3, the first SIW resonator is coupled with the fourth SIW resonator through the negative slope frequency correlation coupling structure to form a coupling path 1-4, and a coupling coefficient changing along with frequency is formed on the coupling path 1-4. The four-order cross-coupling SIW band-pass filter can realize three FTZs with controllable positions.
The input and output feeder adopts a microstrip feeder, the input feeder is connected with the first SIW resonator, the output feeder is connected with the fourth SIW resonator, the width of the microstrip feeder is 1.54mm, the input and output feeders are led out from two feed ports, the two feed ports are a coplanar waveguide structure converted from a 50-ohm microstrip line, and the gap width g of the coplanar waveguide structure is0＝0.25mm。
Fig. 9 shows the results of scattering parameter simulation and test of the fourth-order cross-coupled SIW band-pass filter of the present embodiment, and the measured center frequency is 10.043GHz, the 1dB bandwidth is 281MHz (relative bandwidth is 2.80%), the loss in the pass band is 2.5dB, and the reflection loss in the pass band is 13.97 dB. The three FTZs were measured at 8.80GHz, 9.60 GHz and 10.29GHz, respectively. The four-order cross-coupled SIW band-pass filter of the present embodiment implements two FTZs below the pass band and one FTZ above the pass band, which shows that the filter has good pass band selectivity and lower stop band rejection characteristics.
Fig. 10 shows the result of testing the broadband of the fourth-order cross-coupled SIW band-pass filter of the present embodiment, and an additional FTZ is measured at each of 7.78GHz and 11.56GHz, which further improves the rejection level of the stop band of the filter.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Finally, it is to be noted that: the above description is only a preferred embodiment of the present invention, and is only used to illustrate the technical solutions of the present invention, and not to limit the protection scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.
Claims (10)
1. A negative slope frequency dependence coupling structure is characterized by comprising two short-circuit coplanar waveguides and a magnetic coupling window with controllable size; etching two short-circuit coplanar waveguides which are coupled up and down on the SIW transmission line, additionally arranging a first metal through hole at the open end of each short-circuit coplanar waveguide, arranging a coupling gap between the two short-circuit coplanar waveguides, and additionally arranging a second metal through hole near the two short-circuit coplanar waveguides to control the size of a magnetic coupling window.
2. The negative slope frequency-dependent coupling structure of claim 1, wherein the characteristics of the negative slope frequency-dependent coupling are controlled by controlling the dimensions of the two mutually coupled short-circuited coplanar waveguides, the size of the coupling gap and the size of the magnetic coupling window.
3. The negative slope frequency dependent coupling structure of claim 1, wherein the negative slope frequency dependent coupling structure is equivalent to a frequency dependent impedance transformer K, a normalized impedance transformer K/Z0The calculation is performed by equation (1):
wherein Z is0Representing the characteristic impedance, S, of the SIW transmission line21Representing the transmission coefficient, S, of the SIW transmission line11Denotes the reflection coefficient of the SIW transmission line, and j denotes a complex number.
4. A third order cross-coupled SIW bandpass filter comprising three SIW resonators, a negative slope frequency dependent coupling structure according to any of claims 1-3 and input and output feed lines, said input and output feed lines being connected to the SIW resonators, said three SIW resonators being in a delta-shaped configuration and being coupled to each other.
5. The third-order cross-coupled SIW bandpass filter of claim 4, wherein the three SIW resonators are a first SIW resonator, a second SIW resonator and a third SIW resonator in order from bottom left, top right and bottom right;
the third-order cross-coupled SIW band-pass filter is equivalent to a two-port circuit coupling topological structure, the first SIW resonator is marked as a resonant node 1, the second SIW resonator is marked as a resonant node 2, and the third SIW resonator is marked as a resonant node 3.
6. The third order cross-coupled SIW bandpass filter of claim 5, wherein the second SIW resonator is coupled to the first SIW resonator and the third SIW resonator, respectively, through coupling windows to form primary coupling paths 1-2-3; the first SIW resonator and the third SIW resonator are coupled through a negative slope frequency-dependent coupling structure to form coupling paths 1-3.
7. A third order cross-coupled SIW bandpass filter according to claim 5 wherein the input and output feed lines are microstrip feed lines, the input feed line being connected to the first SIW resonator and the output feed line being connected to the third SIW resonator.
8. A four-order cross-coupled SIW bandpass filter comprising four SIW resonators, two negative slope frequency-dependent coupling structures according to any of claims 1-3, and input-output feed lines, said input-output feed lines being connected to the SIW resonators, said four SIW resonators being in a grid-like structure and being coupled to each other.
9. The fourth-order cross-coupled SIW bandpass filter of claim 8, wherein the four SIW resonators are a first SIW resonator, a second SIW resonator, a third SIW resonator and a fourth SIW resonator in order from bottom left, top right and bottom right;
the four-order cross-coupled SIW band-pass filter is equivalent to a two-port circuit coupling topological structure, the first SIW resonator is marked as a resonant node 1, the second SIW resonator is marked as a resonant node 2, the third SIW resonator is marked as a resonant node 3, and the fourth SIW resonator is marked as a resonant node 4.
10. The fourth-order cross-coupled SIW bandpass filter of claim 9, wherein the second SIW resonator is coupled with the first SIW resonator through a coupling window to form a primary coupling path 1-2; the third SIW resonator and the fourth SIW resonator are coupled through a coupling window to form a main coupling path 3-4; the second SIW resonator and the third SIW resonator are coupled through a negative slope frequency dependence coupling structure to form a coupling path 2-3; the first SIW resonator and the fourth SIW resonator are coupled through a negative slope frequency dependence coupling structure to form a coupling path 1-4;
the input feeder line and the output feeder line are microstrip feeder lines, the input feeder line is connected with the first SIW resonator, and the output feeder line is connected with the fourth SIW resonator.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115117580A (en) * | 2022-07-12 | 2022-09-27 | 安徽大学 | High-rectangular-coefficient semi-lumped millimeter wave filter chip based on cross-coupling structure |
| CN115241618A (en) * | 2022-07-29 | 2022-10-25 | 西安空间无线电技术研究所 | Frequency-dependent cross-coupled coaxial filter and design method thereof |
| CN115117580B (en) * | 2022-07-12 | 2024-04-30 | 安徽大学 | High rectangular coefficient semi-lumped millimeter wave filter chip based on cross coupling structure |
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| CN102891347A (en) * | 2012-09-11 | 2013-01-23 | 上海航天测控通信研究所 | Four-ordered cross-coupled bandpass filter |
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| CN102891347A (en) * | 2012-09-11 | 2013-01-23 | 上海航天测控通信研究所 | Four-ordered cross-coupled bandpass filter |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115117580A (en) * | 2022-07-12 | 2022-09-27 | 安徽大学 | High-rectangular-coefficient semi-lumped millimeter wave filter chip based on cross-coupling structure |
| CN115117580B (en) * | 2022-07-12 | 2024-04-30 | 安徽大学 | High rectangular coefficient semi-lumped millimeter wave filter chip based on cross coupling structure |
| CN115241618A (en) * | 2022-07-29 | 2022-10-25 | 西安空间无线电技术研究所 | Frequency-dependent cross-coupled coaxial filter and design method thereof |
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