CN201898182U - Integrated waveguide filter of multi-layer one fourth mold substrate - Google Patents
Integrated waveguide filter of multi-layer one fourth mold substrate Download PDFInfo
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- CN201898182U CN201898182U CN2010205930184U CN201020593018U CN201898182U CN 201898182 U CN201898182 U CN 201898182U CN 2010205930184 U CN2010205930184 U CN 2010205930184U CN 201020593018 U CN201020593018 U CN 201020593018U CN 201898182 U CN201898182 U CN 201898182U
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Abstract
The utility model relates to an integrated waveguide filter of a multi-layer one fourth mold substrate. In the filter, QMSIW resonant cavities with a quantity of 2n are formed by n layers of medium substrates, n plus one layer of metal layers and metallized through holes; the QMSIW resonant cavities in the same layer are coupled by a coupling channel formed by the defect arrangement of the metallized through holes; the QMSIW resonant cavities in different layers are coupled by a slotting of the metal layers among the layers; and an input port and an output port are directly coupled with the QMSIW resonant cavities through microstrip lines. As the QMSIW resonant cavities are adopted, the size of the integrated waveguide filter of the multi-layer one fourth mold substrate can be reduced to one fourth of that of an SIW (substrate integrated waveguide) resonant cavity; and meanwhile, the QMSIW resonant cavities with a quantity of 2n can be distributed on the n layers of medium substrates by multi-layer design with only occupying the plane sizes of two QMSIW resonant cavities, therefore, the plane size of the filter is greatly reduced. Moreover, the integrated waveguide filter of the multi-layer one fourth mold substrate is simple in structure and has low processing difficulty and very strong practicability.
Description
Technical field
The utility model belongs to microwave technical field, relates to a kind of multilayer 1/4 mould substrate integration wave-guide (Quarter-mode Substrate Integrated Waveguide, QMSIW) filter based on PCB technology.
Background technology
Substrate integration wave-guide (Substrate Integrated Waveguide, SIW) be the novel microwave millimeter wave-guiding wave structure that a kind of PCB of employing or LTCC technology realize on medium substrate, by two row's plated-through holes, double layer of metal face and middle filled media constitute up and down, its essence is a kind of dielectric-filled waveguide structure, have the propagation characteristic similar to the conventional metals waveguide, it is integrated that loss is little, the high while of Q value is easy to the plane again, can be used for designing the passive and active device of various high Q values, as utilize SIW resonator design filter etc.
When operating frequency was low, the actual SIW structure and the size of function module circuit thereof were still bigger, have influenced the integrated level and the practical application of circuit, in order to overcome this shortcoming, have the scholar to propose half module substrate integrated wave guide (HMSIW) structure.The thought of half module substrate integrated wave guide is applied to the SIW resonant cavity just can obtains 1/4 mould substrate integration wave-guide (QMSIW) resonant cavity, will be operated in TE
101SIW resonant cavity under the pattern is divided into four along virtual magnetic wall one, can obtain the QMSIW resonant cavity, and volume is about 1/4 of former SIW resonant cavity, at this moment TE
101The electric field maximum of mould is positioned at the corner of QMSIW resonant cavity.
SIW resonant cavity filter design both at home and abroad at present mainly is based on common SIW resonant cavity and HMSIW resonant cavity, and when lower frequency range, SIW or HMSIW resonant cavity filter still have bigger volume.
The utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art; a kind of multilayer 1/4 mould substrate integral wave guide filter is provided; this filter adopts the QMSIW resonant cavity volume can be reduced to 1/4 of SIW resonant cavity; utilize the multilayer design 2n QMSIW resonant cavity can be distributed on the n layer medium substrate simultaneously; and only take two QMSIW resonant cavity planar dimensions, reduced the planar dimension of filter to a great extent.
Above-mentioned purpose of the present utility model is achieved by following technical solution:
A kind of multilayer 1/4 mould substrate integral wave guide filter; comprise n medium substrate; n+1 metal level; input port; output port; wherein n medium substrate and n+1 metal level are alternately arranged; make each medium substrate between adjacent two metal levels; each medium substrate is provided with two row's plated-through holes of vertical arrangement; have coupling window on the metal level between adjacent two medium substrates; input port; output port lays respectively at the two ends of an outermost metal level; by n medium substrate; the semi open model structure that n+1 metal level and plated-through hole surround constitutes 2n QMSIW resonant cavity; two resonant cavitys between the adjacent media substrate are realized electric coupling or magnetic coupling by the coupling window between resonant cavity, can form the coupling channel realization magnetic coupling that damaged distribution produces by plated-through hole in the medium substrate being removed several between two resonant cavitys of same medium substrate.
In above-mentioned multilayer 1/4 mould substrate integral wave guide filter; input port and output port by microstrip line respectively with the most contiguous medium substrate on two resonant cavitys realize coupling, and by adjusting the effective Q value of microstrip line and the coupling position adjusting input and output resonant cavity of described two resonant cavitys.
In above-mentioned multilayer 1/4 mould substrate integral wave guide filter, electric coupling or magnetic coupling are realized in the position of coupling window, adjust the size of coupling amount according to varying in size of coupling window.
In above-mentioned multilayer 1/4 mould substrate integral wave guide filter; each layer metal level and medium substrate all can be determined its size according to the design needs; wherein ground floor medium substrate d and the bottom surface metal level b thereof near the outermost metal layer that is connected with input and output extends to support the microstrip line of input and output to two ends, and its lateral dimension is greater than all the other metal levels and the medium substrate that continue to arrange downwards successively.
In above-mentioned multilayer 1/4 mould substrate integral wave guide filter, when realizing magnetic coupling by coupling channel between two resonant cavitys of same medium substrate, the size of coupling amount is by the size decision of coupling channel.
The utility model compared with prior art has following beneficial effect:
(1) the utility model filter can be reduced to the volume of filter 1/4 of common SIW resonant cavity filter owing to adopt the QMSIW resonant cavity;
(2) the utility model filter adopts the multilayer design that 2n QMSIW resonant cavity is distributed on the n layer medium substrate, and only take two QMSIW resonant cavity planar dimensions, and can not increase planar dimension, reduce the planar dimension of filter to a great extent because of the increase of filter order;
(3) the utility model filter construction is simple, difficulty of processing is low, the easy and integrated design of other circuit, and can regulate the size of coupling amount by coupling window or coupling channel, have very strong practicality.
Description of drawings
Fig. 1 is the utility model multilayer QMSIW filter example structure schematic diagram;
Fig. 2 is the topological diagram of the multilayer QMSIW filter embodiment of employing the utility model structure;
Fig. 3 is the S parameters simulation result of the multilayer QMSIW filter embodiment of employing the utility model structure.
Embodiment
The present invention is described in further detail below in conjunction with accompanying drawing and specific embodiment:
The principle of the utility model filter is as follows:
Because SIW works in holotype TE
10The time electric field maximum on the vertical central plane of the direction of propagation; therefore this central plane can be thought the magnetic wall of an equivalence; can SIW be cut in half along this vertical central plane (virtual magnetic wall); each partly all is half module substrate integrated wave guide structures; because its ratio of width to height is big, on the opening surface after cutting along the plane of symmetry radiation very faint, near desirable magnetic wall; therefore in half Open architecture, can support this half module electromagnetic field mode, keep original electromagnetic field and distributed.In side circuit, do not need the magnetic wall of a reality, and as long as dielectric substrate extends a bit to fetter a spot of emittance outward from cross section.The method is applied to the SIW resonant cavity just can obtains 1/4 mould substrate integration wave-guide (QMSIW) resonant cavity, will be operated in TE
101SIW resonant cavity under the pattern is divided into four along virtual magnetic wall one, can obtain the QMSIW resonant cavity, and volume is about 1/4 of former SIW resonant cavity.A plurality of QMSIW resonant cavitys are pressed two row layer distributed, with can being coupled by the coupling window that plated-through hole forms between the resonant cavity of layer, can be between the resonant cavity of adjacent layer by fluting coupling on intermediate metal layer, input/output port can and the resonant cavity of the superiors between be coupled, be easy to realize various forms of filters.
Be that example is explained in detail the utility model with the filter that comprises two medium substrates 3, three metal levels 4, forms four resonant cavitys below:
Be illustrated in figure 1 as the utility model multilayer QMSIW filter example structure schematic diagram, this figure below is a filter graph architecture, and the top is the Filter Structures exploded view, and filter is combined closely by number of metal layer and some medium substrates and formed.This filter comprises input port 1 as seen from the figure, output port 2, two medium substrate 3 (d, e), three metal level 4 (a, b, c), mutually perpendicular two row's plated-through holes 5, coupling window 6 and coupling channel 7, by two layer medium substrate 3, the semi open model structure that three-layer metal layer 4 and plated-through hole 5 are surrounded constitutes four QMSIW resonant cavitys 8,9,10,11 (the dotted line circle is a signal among the figure, be not qualification) to the resonant cavity scope, input port 1 and output port 2 lay respectively at the two ends of metallic plate a, direct and QMSIW resonant cavity 8 and 9 couplings by 50 Ω microstrip lines respectively, the loaded Q of regulating the input and output resonant cavity by the coupling position of adjusting microstrip line and resonant cavity.Use in order to make filter be convenient to connect, the medium substrate d of the superiors and bottom surface metal level b thereof should extend supporting the microstrip line of input port 1 and output port 2 to two ends, so the lateral dimension of medium substrate d and metal level b is greater than medium substrate e and metal level c.
Metal level b between medium substrate d and the medium substrate e goes up by fluting and forms two coupling windows 6, between the resonant cavity 8 and 10, all realize coupling between 9 and 11 by coupling window 6, difference according to coupling window 6 positions is carried out electric coupling or magnetic coupling, adjusts the size of coupling amount according to varying in size of coupling window 6.The plated-through hole of vertically arranging between two resonant cavitys 8 on the medium substrate d and 95, between resonant cavity 8 resonant cavity 9, the two is separated fully, making is not coupled between resonant cavity 8 and 9 takes place, the plated-through hole 5 that vertical arrangement is arranged between two resonant cavitys 10 on the medium substrate e and 11 equally, but remove several plated-through holes endways and form damaged distribution, make that resonant cavity 10 and 11 is not separated fully, form coupling channel 7 in the place that does not have plated-through hole 5, realize magnetic coupling by coupling channel 7 between the resonant cavity 10 and 11, the size of coupling amount is by the size decision of coupling channel 7.Can whether realize coupling by the length decision of offering plated-through hole 5 between two resonant cavitys on the same medium substrate, promptly determine whether realizing coupling between the resonant cavity by whether forming coupling channel 7.
Utilize filter shown in Figure 1, design the QMSIW filter of one 4 rank chebyshev function response, filter topologies is seen Fig. 2.Selecting dielectric constant is 2.2, thickness is Rogers 5880 medium substrates of 0.254mm, optimize each design parameter, obtain C frequency range multilayer QMSIW filter simulation result as shown in Figure 3, Fig. 3 is the S parameters simulation result of the multilayer QMSIW filter embodiment of employing the utility model structure, as shown in Figure 3, centre frequency is 5.8GHz, bandwidth 700MHz, Insertion Loss is with interior S less than 3dB in the band
11＜-20dB, off-center frequency 1GHz place band is outer to be suppressed greater than 33dB, and the filter volume is 30mm * 16mm * 0.51mm.
The unspecified part of the utility model specification belongs to general knowledge as well known to those skilled in the art.
Claims (3)
1. multilayer 1/4 mould substrate integral wave guide filter; it is characterized in that: comprise n medium substrate (3); n+1 metal level (4); input port (1); output port (2); wherein n medium substrate (3) alternately arranged with n+1 metal level (4); make each medium substrate (3) be positioned between adjacent two metal levels (4); each medium substrate (3) is provided with two row's plated-through holes (5) of vertical arrangement; have coupling window (6) on the metal level (4) between adjacent two medium substrates (3); input port (1); output port (2) lays respectively at the two ends of an outermost metal level; by a described n medium substrate (3); the semi open model structure that n+1 metal level (4) and plated-through hole (5) surround constitutes 2n QMSIW resonant cavity; two resonant cavitys between the adjacent media substrate (3) are realized electric coupling or magnetic coupling by the coupling window (6) between resonant cavity, can form coupling channel (7) the realization magnetic coupling that damaged distribution produces by the plated-through hole (5) in the described medium substrate (3) being removed several between two resonant cavitys of same medium substrate (3).
2. a kind of multilayer 1/4 mould substrate integral wave guide filter according to claim 1; it is characterized in that: described input port (1) and output port (2) by microstrip line respectively with the most contiguous medium substrate (3) on two resonant cavitys realize coupling, and by adjusting the effective Q value of microstrip line and the coupling position adjusting input and output resonant cavity of described two resonant cavitys.
3. a kind of multilayer 1/4 mould substrate integral wave guide filter according to claim 1 is characterized in that: ground floor medium substrate (d) and bottom surface metal level (b) thereof near the outermost metal layer that is connected with input and output extend to support the microstrip line of input (1) and output (2) to two ends.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010205930184U CN201898182U (en) | 2010-11-01 | 2010-11-01 | Integrated waveguide filter of multi-layer one fourth mold substrate |
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| CN2010205930184U CN201898182U (en) | 2010-11-01 | 2010-11-01 | Integrated waveguide filter of multi-layer one fourth mold substrate |
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Cited By (30)
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| CN103904392A (en) * | 2014-04-08 | 2014-07-02 | 电子科技大学 | Substrate integrated waveguide filter |
| WO2015042359A1 (en) * | 2013-09-23 | 2015-03-26 | Cts Corporation | Dielectric waveguide filter with direct coupling and alternative cross-coupling |
| US9030278B2 (en) | 2011-05-09 | 2015-05-12 | Cts Corporation | Tuned dielectric waveguide filter and method of tuning the same |
| US9030279B2 (en) | 2011-05-09 | 2015-05-12 | Cts Corporation | Dielectric waveguide filter with direct coupling and alternative cross-coupling |
| CN104638360A (en) * | 2015-02-16 | 2015-05-20 | 南通大学 | Filtering antenna |
| US9130255B2 (en) | 2011-05-09 | 2015-09-08 | Cts Corporation | Dielectric waveguide filter with direct coupling and alternative cross-coupling |
| US9130256B2 (en) | 2011-05-09 | 2015-09-08 | Cts Corporation | Dielectric waveguide filter with direct coupling and alternative cross-coupling |
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| CN105161805A (en) * | 2015-08-19 | 2015-12-16 | 中国电子科技集团公司第二十八研究所 | Miniature differential band-pass filter based on stacked dielectric integrated waveguide |
| CN105958167A (en) * | 2016-07-01 | 2016-09-21 | 北京交通大学 | Vertical substrate integrated waveguide and vertical connection structure comprising the waveguide |
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| CN106410336A (en) * | 2016-09-29 | 2017-02-15 | 上海航天测控通信研究所 | Stacked type three-order substrate integrated waveguide filter |
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| CN107819180A (en) * | 2017-09-27 | 2018-03-20 | 广东曼克维通信科技有限公司 | Substrate integration wave-guide device and substrate integral wave guide filter |
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2010
- 2010-11-01 CN CN2010205930184U patent/CN201898182U/en not_active Expired - Lifetime
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| CN112310581A (en) * | 2020-08-24 | 2021-02-02 | 宿迁博翔教育科技有限公司 | 5G high-selectivity LTCC band-pass filter based on substrate integrated waveguide |
| CN112164846A (en) * | 2020-09-10 | 2021-01-01 | 武汉凡谷电子技术股份有限公司 | Millimeter wave band-pass filter |
| CN115207593A (en) * | 2022-06-13 | 2022-10-18 | 苏州博海创业微系统有限公司 | Multilayer dielectric resonator and dielectric filter |
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Assignee: China Great Wall Industrial Corp. Assignor: China Academy of Space Technology (Xi'an) Contract record no.: 2011990001104 Denomination of utility model: A multilayer 1/4 mode substrate integrated waveguide filter Granted publication date: 20110713 License type: Exclusive License Record date: 20111221 |
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