CN107623159A - Triangle substrate integral waveguide resonant cavity double-mode band-pass filter - Google Patents
Triangle substrate integral waveguide resonant cavity double-mode band-pass filter Download PDFInfo
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- CN107623159A CN107623159A CN201710628187.3A CN201710628187A CN107623159A CN 107623159 A CN107623159 A CN 107623159A CN 201710628187 A CN201710628187 A CN 201710628187A CN 107623159 A CN107623159 A CN 107623159A
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- isosceles triangle
- triangle substrate
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Abstract
The invention discloses a kind of triangle substrate integral waveguide resonant cavity double-mode band-pass filter based on different ripple ports, resonator is the isosceles triangle that drift angle is 120 °, contain two ripple ports all on the waist of triangle, two ripple ports all on the base of triangle and a ripple port on waist, another ripple port is in these three situations of base.Two microstrip line connects resonator cavities respectively, and four metal throuth holes have been opened between two microstrip lines as interference post, have formed a complete resonator.The present invention is firstly introduced into four metal throuth holes as interference posts, in order to changes the resonant frequency of basic mode at higher frequency and the resonant frequency of the first higher mode is held essentially constant, so as to form a bimodule band-pass filter.The present invention is simple in construction, easy to process, functional, is laid the first stone to study overall compact dual mode filter from now on.
Description
Technical field
The present invention relates to a kind of triangle substrate integral waveguide resonant cavity double-mode band-pass filter, more particularly to one kind is based on
The triangle substrate integral waveguide resonant cavity double-mode band-pass filter of different ripple ports, belongs to millimeter-wave technology field.
Background technology
In Modern wireless communication, microwave frequency band communication system traffic is various, and frequency resource is extremely nervous, future communication technologies
Towards higher frequency section -- millimeter wave direction is developed.Wave filter as the part for separating signal, is closed in wireless communication system
One of key section.Because substrate integrated waveguide technology has in light weight, high quality factor, low insertion loss, high integration, big work(
The features such as rate capacity, had a wide range of applications in modern communicationses.
But substrate integral wave guide filter draws because its relatively large size limits its development to a certain extent
This problem can largely be solved by entering substrate integration wave-guide dual mode filter, because two modes of resonance will be in a resonance
Realized in chamber, this reduces a semi-area of original resonator.
In recent years, there is many based on circular or square substrate integrated waveguide dual mode filter researchs, but for
Drift angle is that the research of 120 ° of isosceles triangle substrate integration wave-guide dual mode filter is not dabbled also.Compared with them, triangle
The characteristics of shape substrate integration wave-guide is with more layout is easy to, it would be highly desirable to develop.
The content of the invention
The technical problem that the above-mentioned background technology of solution proposes, the present invention is intended to provide it is a kind of based on different ripple ports three
Angular substrate integration wave-guide resonant cavity double-mode band-pass filter, solves the relatively large size of substrate integral wave guide filter simultaneously
And laid the first stone for three cavity filters of the research with more compact structure from now on.
The present invention uses following technical scheme to solve above-mentioned technical problem：
The present invention provides a kind of triangle substrate integral waveguide resonant cavity double-mode band-pass filter, including medium substrate and difference
It is arranged on top layer metallic layer, the bottom metal layer of medium substrate upper and lower surface；
Three row's metal throuth holes are provided with the medium substrate, metal throuth hole described in three rows and medium substrate, top layer metallic layer, bottom
Layer metal level forms an isosceles triangle substrate integration wave-guide resonator；
The upper surface of the medium substrate is additionally provided with two microstrip lines, and two microstrip lines pass through a co-planar waveguide respectively
Structure accesses isosceles triangle substrate integration wave-guide resonator, two microstrip line access isosceles triangle substrate integration wave-guides
The position of resonator includes three kinds of situations：Two microstrip lines are from the base of isosceles triangle substrate integration wave-guide resonator
Access, two microstrip lines respectively from the access of two waists of isosceles triangle substrate integration wave-guide resonator, two it is described micro-
Accessed respectively from a waist of isosceles triangle substrate integration wave-guide resonator and base with line；
The metal throuth hole row as interference post are additionally provided with the medium substrate, the metal throuth hole row are arranged on described
In isosceles triangle substrate integration wave-guide resonator and between two microstrip lines.
As the further technical scheme of the present invention, the spacing in the metal throuth hole row between through hole is true as needed
It is fixed.
As the further technical scheme of the present invention, the drift angle of the isosceles triangle substrate integration wave-guide resonator is
120°。
As the further technical scheme of the present invention, the metal throuth hole row are arranged on isosceles triangle substrate integration wave-guide
On the perpendicular bisector of resonator.
As the further technical scheme of the present invention, the metal throuth hole arranges to be made up of four metal throuth holes.
As the further technical scheme of the present invention, the impedance of two microstrip lines is 50 ohm.
The present invention compared with prior art, has following technique effect using above technical scheme：Design structure of the present invention
Simply, it is easy to industrial processes.Being firstly introduced into substrate integration wave-guide dual mode filter causes two modes of resonance in a resonator
Middle realization, largely solve the problems, such as that substrate integral wave guide filter has relatively large size.Secondly, to three kinds not
Three cavity filters with more compact structure that are designed as studying from now on ripple port position lay the first stone.
Brief description of the drawings
The structure schematic top plan view of resonator cavities in Fig. 1 present invention.
Fig. 2 is the three-dimensional topographical schematic diagram of resonator cavities in the present invention.
Fig. 3 (a) be in the present invention ripple port on waist, the knot of another bandpass filter of ripple port on base
Structure schematic diagram.
Fig. 3 (b) is the knot of two ripple ports bandpass filter on two waists of equilateral triangle respectively in the present invention
Structure schematic diagram.
Fig. 3 (c) is that the structure of bandpass filter of two ripple ports on the base of equilateral triangle in the present invention is shown
It is intended to.
Fig. 4 (a) is the bandpass filter resonance that a ripple port is on waist in the present invention, another ripple port is on base
The S parameter simulation waveform of chamber.
Fig. 4 (b) is two ripple ports bandpass filter resonance on two waists of equilateral triangle respectively in the present invention
The S parameter simulation waveform of chamber.
Fig. 4 (c) is bandpass filter resonator of two ripple ports on the base of equilateral triangle in the present invention
S parameter simulation waveform.
In figure：1 is top layer metallic layer；2 be dielectric substrate；3 be metal throuth hole；4 be bottom metal layer.
Embodiment
Technical scheme is described in further detail below in conjunction with the accompanying drawings：
The invention discloses a kind of triangle substrate integral waveguide resonant cavity double-mode band-pass filter based on different ripple ports, adopt
Opened round metal throuth hole completes the design of bimodule band-pass filter in triangle substrate integral waveguide resonator.It is of the invention first
The secondary research for carrying out dual mode filter for 120 ° of isosceles triangle substrate integration wave-guide resonators for drift angle, passes through a metal
Through hole row reach the effect of bandpass filter as interference post；Meanwhile the research to wave filter at three kinds of different ripple ports,
Comprising two ripple ports all on the waist of triangle, two ripple ports are all on the base of triangle and a ripple port in waist
On, another ripple port is in these three situations of base.The present invention is simple in construction, easy to process, functional, to study from now on more
The dual mode filter for stepping up to gather lays the first stone.
Triangle substrate integral waveguide resonant cavity double-mode band-pass filter of the present invention, as illustrated in fig. 1 and 2, including medium base
Plate and it is separately positioned on the top layer metallic layer of medium substrate upper and lower surface, bottom metal layer.Three rows are provided with medium substrate
Metal throuth hole, metal throuth hole described in three rows form an isosceles triangle base with medium substrate, top layer metallic layer, bottom metal layer
Piece integrated wave guide resonance chamber.The upper surface of medium substrate is additionally provided with two microstrip lines, and two microstrip lines pass through one respectively
Individual coplanar waveguide structure accesses isosceles triangle substrate integration wave-guide resonator.Two microstrip line access isosceles triangle bases
The position of piece integrated wave guide resonance chamber includes three kinds of situations：Two the microstrip line is humorous from isosceles triangle substrate integration wave-guide
Shake the base access of chamber, two microstrip lines respectively from the access of two waists of isosceles triangle substrate integration wave-guide resonator,
Two microstrip lines access from a waist of isosceles triangle substrate integration wave-guide resonator and base respectively.On medium substrate
The metal throuth hole row as interference post are additionally provided with, the metal throuth hole row are arranged on the isosceles triangle substrate and integrated
Wave guide resonance intracavitary and between two microstrip lines.In the present invention, the purpose for introducing interference post is in order to by the humorous of basic mode
Vibration frequency changes at higher frequency and the resonant frequency of the first higher mode is held essentially constant, so as to form a bimodulus band
Bandpass filter.
Technical scheme is described in further detail below by specific embodiment：
In the embodiment of the present invention, using Rogers 5880 dielectric-slab, its dielectric constant is 2.2, thickness is 0.787 millimeter；Waist
The drift angle of triangle substrate integral waveguide resonator is 120 °.The impedance of two microstrip lines is 50 ohm, this two microstrip lines
Respectively as the input and output end of resonator.
Embodiment 1
As shown in Fig. 3 (a), a ripple port is on the waist of triangle, and another ripple port is on the base of triangle, i.e., two
The microstrip line is connect from a waist of isosceles triangle substrate integration wave-guide resonator and base by coplanar waveguide structure respectively
Entering in resonator, i.e. two microstrip lines do not have plated-through hole with resonator connecting place, meanwhile, open stria in microstrip line both sides
Introduce resonator.Along the perpendicular bisector direction of isosceles triangle substrate integration wave-guide resonator, two metals are set to lead to respectively up and down
Hole, as interference post, wherein, the spacing of middle two through holes is more than the spacing of remaining adjacent through-holes.It is humorous as shown in Fig. 4 (a)
To shake chamber S parameter simulation waveform, its centre frequency is 12.25GHZ, relative bandwidth 4.1%, in-band insertion loss 0.3dB,
Return loss is more than 20dB, and its service behaviour is good.
Embodiment 2
As shown in Fig. 3 (b), two ripple ports are all on the waist of triangle, i.e., two microstrip lines are respectively from isosceles triangle
One waist of substrate integration wave-guide resonator and base pass through coplanar waveguide structure and accessed in resonator, i.e. two microstrip lines with
Resonator connecting place does not have plated-through hole, meanwhile, stria is opened in microstrip line both sides and introduces resonator.Along isosceles triangle substrate
The perpendicular bisector direction of integrated wave guide resonance chamber, the through hole row of four metal throuth holes are set, as interference post, wherein, it is adjacent
Spacing between through hole is equal.Resonator S parameter simulation waveform as shown in Fig. 4 (b), its centre frequency are 12.35GHZ,
Relative bandwidth is 5.2%, in-band insertion loss 0.2dB, and return loss is more than 18dB, and its service behaviour is good.
Embodiment 3
As shown in Fig. 3 (c), two ripple ports are all on the base of triangle, i.e., two microstrip lines are from isosceles triangle
The base of substrate integration wave-guide resonator is accessed in resonator by coplanar waveguide structure, i.e. two microstrip lines and resonator phase
No plated-through hole at even, meanwhile, stria is opened in microstrip line both sides and introduces resonator.Along isosceles triangle substrate integration wave-guide
The perpendicular bisector direction of resonator sets the through hole row of four metal throuth holes, as interference post, wherein, between adjacent through-holes
Spacing is equal.Resonator S parameter simulation waveform as shown in Fig. 4 (c), its centre frequency are 12.23GHZ, and relative bandwidth is
5.7%, in-band insertion loss 0.4dB, return loss are more than 20dB, and its service behaviour is good.
It is described above, it is only the embodiment in the present invention, but protection scope of the present invention is not limited thereto, and is appointed
What be familiar with the people of the technology disclosed herein technical scope in, it will be appreciated that the conversion or replacement expected, should all cover
Within the scope of the present invention, therefore, protection scope of the present invention should be defined by the protection domain of claims.
Claims (6)
1. triangle substrate integral waveguide resonant cavity double-mode band-pass filter, it is characterised in that including medium substrate and difference
It is arranged on top layer metallic layer, the bottom metal layer of medium substrate upper and lower surface；
Three row's metal throuth holes are provided with the medium substrate, metal throuth hole described in three rows and medium substrate, top layer metallic layer, bottom
Layer metal level forms an isosceles triangle substrate integration wave-guide resonator；
The upper surface of the medium substrate is additionally provided with two microstrip lines, and two microstrip lines pass through a co-planar waveguide respectively
Structure accesses isosceles triangle substrate integration wave-guide resonator, two microstrip line access isosceles triangle substrate integration wave-guides
The position of resonator includes three kinds of situations：Two microstrip lines are from the base of isosceles triangle substrate integration wave-guide resonator
Access, two microstrip lines respectively from the access of two waists of isosceles triangle substrate integration wave-guide resonator, two it is described micro-
Accessed respectively from a waist of isosceles triangle substrate integration wave-guide resonator and base with line；
The metal throuth hole row as interference post are additionally provided with the medium substrate, the metal throuth hole row are arranged on described
In isosceles triangle substrate integration wave-guide resonator and between two microstrip lines.
2. triangle substrate integral waveguide resonant cavity double-mode band-pass filter according to claim 1, it is characterised in that institute
The spacing in metal throuth hole row between through hole is stated to determine as needed.
3. triangle substrate integral waveguide resonant cavity double-mode band-pass filter according to claim 1, it is characterised in that institute
The drift angle for stating isosceles triangle substrate integration wave-guide resonator is 120 °.
4. triangle substrate integral waveguide resonant cavity double-mode band-pass filter according to claim 1, it is characterised in that institute
Metal throuth hole row are stated to be arranged on the perpendicular bisector of isosceles triangle substrate integration wave-guide resonator.
5. triangle substrate integral waveguide resonant cavity double-mode band-pass filter according to claim 1, it is characterised in that institute
State metal throuth hole and arrange and be made up of four metal throuth holes.
6. triangle substrate integral waveguide resonant cavity double-mode band-pass filter according to claim 1, it is characterised in that two
The impedance of microstrip line described in bar is 50 ohm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710628187.3A CN107623159A (en) | 2017-07-28 | 2017-07-28 | Triangle substrate integral waveguide resonant cavity double-mode band-pass filter |
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| CN201710628187.3A CN107623159A (en) | 2017-07-28 | 2017-07-28 | Triangle substrate integral waveguide resonant cavity double-mode band-pass filter |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493539A (en) * | 2018-05-31 | 2018-09-04 | 南京邮电大学 | Triangle substrate integral waveguide resonant cavity two-chamber bimodule band-pass filter |
| CN108631031A (en) * | 2018-05-31 | 2018-10-09 | 南京邮电大学 | Triangle substrate integral waveguide resonant cavity double-mode band-pass filter |
| CN108767382A (en) * | 2018-05-24 | 2018-11-06 | 西安电子科技大学 | The adjustable three moulds bandpass filter of electricity based on substrate integration wave-guide |
| CN109103555A (en) * | 2018-07-19 | 2018-12-28 | 杭州电子科技大学 | Triple-band filter based on SIW structure |
| CN109599644A (en) * | 2018-12-06 | 2019-04-09 | 西安电子科技大学 | A kind of highly selective chip integrated waveguide broad-band filter |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108767382A (en) * | 2018-05-24 | 2018-11-06 | 西安电子科技大学 | The adjustable three moulds bandpass filter of electricity based on substrate integration wave-guide |
| CN108767382B (en) * | 2018-05-24 | 2019-09-10 | 西安电子科技大学 | The adjustable three moulds bandpass filter of electricity based on substrate integration wave-guide |
| CN108493539A (en) * | 2018-05-31 | 2018-09-04 | 南京邮电大学 | Triangle substrate integral waveguide resonant cavity two-chamber bimodule band-pass filter |
| CN108631031A (en) * | 2018-05-31 | 2018-10-09 | 南京邮电大学 | Triangle substrate integral waveguide resonant cavity double-mode band-pass filter |
| CN108493539B (en) * | 2018-05-31 | 2019-11-05 | 南京邮电大学 | Triangle substrate integral waveguide resonant cavity two-chamber bimodule band-pass filter |
| CN108631031B (en) * | 2018-05-31 | 2019-12-31 | 南京邮电大学 | Triangular substrate integrated waveguide resonant cavity dual-mode band-pass filter |
| CN109103555A (en) * | 2018-07-19 | 2018-12-28 | 杭州电子科技大学 | Triple-band filter based on SIW structure |
| CN109599644A (en) * | 2018-12-06 | 2019-04-09 | 西安电子科技大学 | A kind of highly selective chip integrated waveguide broad-band filter |
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