CN105119032A - Band-pass filter based on triangular substrate integrated resonator - Google Patents
Band-pass filter based on triangular substrate integrated resonator Download PDFInfo
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- CN105119032A CN105119032A CN201510532044.3A CN201510532044A CN105119032A CN 105119032 A CN105119032 A CN 105119032A CN 201510532044 A CN201510532044 A CN 201510532044A CN 105119032 A CN105119032 A CN 105119032A
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Abstract
The invention discloses a band-pass filter based on a triangular substrate integrated resonator. The band-pass filter comprises a first resonant cavity, a second resonant cavity, a third resonant cavity, a first microstrip line, and a second microstrip line, the first resonant cavity, the second resonant cavity, and the third resonant cavity both comprise a top metal layer, a medium substrate, and a bottom metal layer arranged in parallel in sequence from top to bottom, the top metal layer, the medium substrate, and the bottom metal layer are congruent obtuse isosceles triangles with the obtuse angle of 120 degrees, the medium substrate is distributed with a metallized through hole parallel to three edges of the medium substrate, the first resonant cavity, the second resonant cavity, and the third resonant cavity respectively regard two side surfaces which the obtuse angles of the three cavities belong to as coupling surfaces, each two side surfaces are coupled to form an equilateral triangle resonant cavity, the first microstrip line is connected with a midpoint of an edge which belongs to the first resonant cavity in edges of the equilateral triangle resonant cavity, and the second microstrip line is connected with a midpoint of an edge which belongs to the second resonant cavity in the edges of the equilateral triangle resonant cavity. According to the band-pass filter, the contradiction between the increase of the frequency range and the difficulty of industrial processing of the filter is solved.
Description
Technical field
The invention belongs to millimeter-wave technology field, particularly based on the band pass filter of triangle substrate integrated resonator.
Background technology
In Modern wireless communication, microwave frequency band communication system traffic is various, and frequency resource is very nervous, and future communication technologies is towards more high band--millimeter wave future development.Filter, as the part for separating of signal, is one of key component in wireless communication system.The features such as the high quality factor that triangle substrate integrated resonator has, low insertion loss, compact conformation, high power capacity, have a wide range of applications in modern communications.And improving constantly along with frequency range, the size of millimetric wave device will constantly reduce.When the design size of millimetric wave device narrows down to some degree, due to the limitation of industrial processing technology, cannot accurately process.How to improve the frequency range of filter, and industrial processing technology accurately can be processed now, become the problem that this field needs to solve day by day.
Summary of the invention
In order to solve the technical problem that above-mentioned background technology proposes, the present invention aims to provide the band pass filter based on triangle substrate integrated resonator, solves filter frequency range and to increase and industrial processes becomes contradiction between difficulty.
In order to realize above-mentioned technical purpose, technical scheme of the present invention is:
Based on the band pass filter of triangle substrate integrated resonator, comprise the first resonant cavity, the second resonant cavity, the 3rd resonant cavity, the first microstrip line and the second microstrip line, described first, second, 3rd resonant cavity includes parallel successively top layer metallic layer from top to bottom, dielectric substrate and bottom metal layer, described top layer metallic layer, dielectric substrate and bottom metal layer are that mutually congruence and obtuse angle are the obtuse angle isosceles triangle of 120 °, described dielectric substrate is placed with the three row plated-through holes being parallel to dielectric substrate three edges, the triangle area that on described first resonant cavity and the second resonant cavity dielectric substrate, three row plated-through holes surround is equal, the triangle area that on 3rd resonator dielectric substrate, three row plated-through holes surround is less than the triangle that on other two chambeies dielectric substrates, three row plated-through holes surround, described first, second, third resonant cavity respectively with its two sides, place, obtuse angle for coupling surface, be coupled formation equilateral-triangle resonance cavity between two, and be cross-couplings between first, second resonant cavity, the first, be inner couplings between the 3rd resonant cavity and second, third resonant cavity, the three row plated-through holes shared after any two resonant cavity couplings all leave the space as magnetic coupling window in the center near equilateral-triangle resonance cavity, described first microstrip line is connected with the mid point belonging to the first resonant cavity border in the border of equilateral-triangle resonance cavity, second microstrip line is connected with the mid point belonging to the second resonant cavity border in the border of equilateral-triangle resonance cavity, and the connecting place of first, second microstrip line and equilateral-triangle resonance cavity is without plated-through hole.
Wherein, first, second microstrip line above-mentioned and equilateral-triangle resonance cavity connecting place have stria.
Wherein, the impedance of above-mentioned first microstrip line is 50 ohm.
Wherein, the impedance of above-mentioned second microstrip line is 50 ohm.
Wherein, above-mentioned band pass filter is mirror symmetrical structure.
Adopt the beneficial effect that technique scheme is brought:
(1) the present invention utilizes triangle substrate integrated filter first and third chamber, and the 3rd, inner couplings between two between two chambeies, make resonator become filter, improve filter range, and pass band width is large;
(2) the present invention utilizes the cross-couplings between first and second chamber of triangle substrate integrated filter, makes signal form zero point in the transmission, effectively inhibits the outer loss of band, improves filtering performance;
(3) primary structure of the present invention is exactly equilateral triangle substrate integrated filter, is made up of three simple triangle resonant cavitys, simple and compact for structure, is easy to industrial processes.
Accompanying drawing explanation
Fig. 1 is the 3 dimensional drawing of elementary cell resonant cavity of the present invention;
Fig. 2 is the structural representation of band pass filter of the present invention;
Fig. 3 is the S parameter simulation waveform figure of band pass filter of the present invention.
Label declaration: 1, top layer metallic layer; 2, dielectric substrate; 3, bottom metal layer; 4, plated-through hole;
5, the first microstrip line; 6, the second microstrip line; 7, magnetic coupling window
Embodiment
Below with reference to accompanying drawing, technical scheme of the present invention is described in detail.
Based on the band pass filter of triangle substrate integrated resonator, comprise the first resonant cavity, the second resonant cavity, the 3rd resonant cavity, the first microstrip line 5 and the second microstrip line 6.Described first, second, 3rd resonant cavity includes parallel successively top layer metallic layer 1 from top to bottom, dielectric substrate 2 and bottom metal layer 3, described top layer metallic layer, dielectric substrate and bottom metal layer are that mutually congruence and obtuse angle are the obtuse angle isosceles triangle of 120 °, described dielectric substrate is placed with the three row plated-through holes 4 being parallel to dielectric substrate three edges, the triangle area that on described first resonant cavity and the second resonant cavity dielectric substrate, three row plated-through holes surround is equal, the triangle area that on 3rd resonator dielectric substrate, three row plated-through holes surround is less than the triangle that on other two chambeies dielectric substrates, three row plated-through holes surround.The structure of first, second, third resonant cavity as shown in Figure 1.
First, second, third resonant cavity respectively with its two sides, place, obtuse angle for coupling surface, be coupled formation equilateral-triangle resonance cavity between two, and be cross-couplings between first, second resonant cavity, the first, be inner couplings between the 3rd resonant cavity and second, third resonant cavity, the three row plated-through holes shared after any two resonant cavity couplings all leave the space as magnetic coupling window 7 in the center near equilateral-triangle resonance cavity.Described first microstrip line is connected with the mid point belonging to the first resonant cavity border in the border of equilateral-triangle resonance cavity, second microstrip line is connected with the mid point belonging to the second resonant cavity border in the border of equilateral-triangle resonance cavity, and the connecting place of first, second microstrip line and equilateral-triangle resonance cavity is without plated-through hole.Based on the band pass filter of triangle substrate integrated resonator structure as shown in Figure 2.
In the present embodiment, first, second microstrip line and equilateral-triangle resonance cavity connecting place have stria.
In the present embodiment, the impedance of first, second microstrip line is 50 ohm.
In the present embodiment, band pass filter is mirror symmetrical structure.
Three mutual inner couplings of resonant cavity produce passband, and cross-couplings produces transmission zero.(abscissa is frequency to the S parameter simulation waveform figure of band pass filter as shown in Figure 3, unit: GHz, ordinate is S parameter, unit: decibel), solid line (S21) and dotted line (S11) represent the relation of the relation of reflection of electromagnetic wave coefficient and frequency, electromagnetic transmission coefficient and frequency respectively, produce transmission zero at high frequency treatment, demonstrate the performance of band pass filter.
As shown in Figure 3, the centre frequency of band pass filter is 13.35GHz, and relative bandwidth is 8.99%, and in-band insertion loss is about 1.2dB, and return loss is greater than 15dB, and transmission zero, below-30dB, illustrates that this performance of filter is good.
Above embodiment is only and technological thought of the present invention is described, can not limit protection scope of the present invention with this, and every technological thought proposed according to the present invention, any change that technical scheme basis is done, all falls within scope.
Claims (5)
1. based on the band pass filter of triangle substrate integrated resonator, it is characterized in that: comprise the first resonant cavity, the second resonant cavity, the 3rd resonant cavity, the first microstrip line and the second microstrip line, described first, second, 3rd resonant cavity includes parallel successively top layer metallic layer from top to bottom, dielectric substrate and bottom metal layer, described top layer metallic layer, dielectric substrate and bottom metal layer are that mutually congruence and obtuse angle are the obtuse angle isosceles triangle of 120 °, described dielectric substrate is placed with the three row plated-through holes being parallel to dielectric substrate three edges, the triangle area that on described first resonant cavity and the second resonant cavity dielectric substrate, three row plated-through holes surround is equal, the triangle area that on 3rd resonator dielectric substrate, three row plated-through holes surround is less than the triangle that on other two chambeies dielectric substrates, three row plated-through holes surround, described first, second, third resonant cavity respectively with its two sides, place, obtuse angle for coupling surface, be coupled formation equilateral-triangle resonance cavity between two, and be cross-couplings between first, second resonant cavity, the first, be inner couplings between the 3rd resonant cavity and second, third resonant cavity, the three row plated-through holes shared after any two resonant cavity couplings all leave the space as magnetic coupling window in the center near equilateral-triangle resonance cavity, described first microstrip line is connected with the mid point belonging to the first resonant cavity border in the border of equilateral-triangle resonance cavity, second microstrip line is connected with the mid point belonging to the second resonant cavity border in the border of equilateral-triangle resonance cavity, and the connecting place of first, second microstrip line and equilateral-triangle resonance cavity is without plated-through hole.
2. according to claim 1 based on the band pass filter of triangle substrate integrated resonator, it is characterized in that: first, second microstrip line described and equilateral-triangle resonance cavity connecting place have stria.
3. according to claim 1 based on the band pass filter of triangle substrate integrated resonator, it is characterized in that: the impedance of described first microstrip line is 50 ohm.
4. according to claim 1 based on the band pass filter of triangle substrate integrated resonator, it is characterized in that: the impedance of described second microstrip line is 50 ohm.
5. according to claim 1 based on the band pass filter of triangle substrate integrated resonator, it is characterized in that: described band pass filter is mirror symmetrical structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510532044.3A CN105119032B (en) | 2015-08-26 | Bandpass filter based on triangle substrate integrated resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510532044.3A CN105119032B (en) | 2015-08-26 | Bandpass filter based on triangle substrate integrated resonator |
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| CN105119032A true CN105119032A (en) | 2015-12-02 |
| CN105119032B CN105119032B (en) | 2018-08-31 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105720340A (en) * | 2016-02-19 | 2016-06-29 | 南京邮电大学 | Compact type band-pass filter containing low-frequency transmission zero |
| CN105896008A (en) * | 2016-04-27 | 2016-08-24 | 南京邮电大学 | Compact-type band-pass filter comprising transmission zero points at high and low frequencies |
| CN107623159A (en) * | 2017-07-28 | 2018-01-23 | 南京邮电大学 | Triangle substrate integral waveguide resonant cavity double-mode band-pass filter |
| EP3367496A4 (en) * | 2016-01-29 | 2018-12-26 | Huawei Technologies Co., Ltd. | Filter unit and filter |
| CN113300065A (en) * | 2021-05-25 | 2021-08-24 | 南京邮电大学 | Mixed mode band-pass filter based on triangular substrate integrated waveguide |
| KR20230061911A (en) * | 2021-10-29 | 2023-05-09 | 한국전자기술연구원 | Low loss 5G substrate integrated filter with transmission zeros |
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| KR20100097392A (en) * | 2009-02-26 | 2010-09-03 | 광운대학교 산학협력단 | Spurious suppressed substrate integrated waveguide (siw) filter using stepped-impedance resonator (sir) structure |
| CN103337678A (en) * | 2013-06-26 | 2013-10-02 | 东南大学 | Crossed coupling substrate integrated waveguide filter with steep side band characteristic |
| CN203895577U (en) * | 2014-05-13 | 2014-10-22 | 南京邮电大学 | Band pass filter based on one third equilateral triangle substrate integration waveguide |
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| KR20100097392A (en) * | 2009-02-26 | 2010-09-03 | 광운대학교 산학협력단 | Spurious suppressed substrate integrated waveguide (siw) filter using stepped-impedance resonator (sir) structure |
| CN103337678A (en) * | 2013-06-26 | 2013-10-02 | 东南大学 | Crossed coupling substrate integrated waveguide filter with steep side band characteristic |
| CN203895577U (en) * | 2014-05-13 | 2014-10-22 | 南京邮电大学 | Band pass filter based on one third equilateral triangle substrate integration waveguide |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3367496A4 (en) * | 2016-01-29 | 2018-12-26 | Huawei Technologies Co., Ltd. | Filter unit and filter |
| US10622693B2 (en) | 2016-01-29 | 2020-04-14 | Huawei Technologies Co., Ltd. | Filter unit and filter |
| CN105720340A (en) * | 2016-02-19 | 2016-06-29 | 南京邮电大学 | Compact type band-pass filter containing low-frequency transmission zero |
| CN105896008A (en) * | 2016-04-27 | 2016-08-24 | 南京邮电大学 | Compact-type band-pass filter comprising transmission zero points at high and low frequencies |
| CN107623159A (en) * | 2017-07-28 | 2018-01-23 | 南京邮电大学 | Triangle substrate integral waveguide resonant cavity double-mode band-pass filter |
| CN113300065A (en) * | 2021-05-25 | 2021-08-24 | 南京邮电大学 | Mixed mode band-pass filter based on triangular substrate integrated waveguide |
| KR20230061911A (en) * | 2021-10-29 | 2023-05-09 | 한국전자기술연구원 | Low loss 5G substrate integrated filter with transmission zeros |
| KR102643178B1 (en) * | 2021-10-29 | 2024-03-05 | 한국전자기술연구원 | Low loss 5G substrate integrated filter with transmission zeros |
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