CN109638395B - Microstrip ultra wide band pass filter - Google Patents

Microstrip ultra wide band pass filter Download PDF

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CN109638395B
CN109638395B CN201811489456.3A CN201811489456A CN109638395B CN 109638395 B CN109638395 B CN 109638395B CN 201811489456 A CN201811489456 A CN 201811489456A CN 109638395 B CN109638395 B CN 109638395B
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CN109638395A (en
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吕志清
安翔
邰媛
王英飞
单孝通
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Xian University of Electronic Science and Technology
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/201Filters for transverse electromagnetic waves
    • H01P1/203Strip line filters
    • H01P1/20327Electromagnetic interstage coupling
    • H01P1/20354Non-comb or non-interdigital filters
    • H01P1/20381Special shape resonators

Abstract

The invention provides a micro-strip ultra-wideband band-pass filter, which is used for solving the problems that the existing micro-strip ultra-wideband band-pass filter is poor in pass-band effect and difficult to independently adjust the characteristics of each trapped wave. The metal floor comprises a dielectric substrate, a ring resonator printed on the upper surface of the dielectric substrate and a metal floor of the lower surface of the dielectric substrate; the ring resonator is internally provided with a T-shaped resonator, two sides of a Y axis of the ring resonator are respectively provided with a microstrip feeder line, the microstrip feeder lines are provided with E-shaped gaps, two sides of one microstrip feeder line are respectively provided with an S-shaped resonator, two sides of the other microstrip feeder line are respectively provided with an I-shaped resonator, the two S-shaped resonators and the two I-shaped resonators are asymmetrically arranged around a symmetrical axis of the whole filter, and a short circuit branch is grounded through a metal through hole; rectangular gaps are etched in the metal floor; the invention has good passband effect and three trapped waves can be independently adjusted.

Description

Microstrip ultra wide band pass filter
Technical Field
The invention belongs to the technical field of microwave communication devices, relates to an ultra-wideband band-pass filter, and particularly relates to a micro-strip ultra-wideband band-pass filter with a trapped wave effect, which can be used for designing a microwave millimeter wave circuit.
Background
With the rapid development of communication technology, ultra-wideband wireless communication has great development potential due to the advantages of large space capacity, high transmission speed, high power consumption, high processing gain, good safety performance and the like. The performance of the filter, which is an important component of a microwave system, is directly related to the performance of the whole system. Conventional band pass filters are generally classified into planar microstrip, stripline structure filters, and metal waveguide structure filters. Although the metal waveguide structure filter has high Q value, large power capacity and small loss, the metal waveguide structure filter has large volume, is difficult to integrate with other microwave circuits and is difficult to realize miniaturization. The stripline impedance is easy to control, the shielding effect is good, the integration is easy, the processing is convenient, but the signal propagation speed is slow. The microstrip line retains the advantages of easy integration, convenient processing and the like of the strip line filter, has the advantages of small volume, light weight, wide frequency band, high signal propagation speed and the like, and is widely concerned and applied at present.
Because of the existence of frequency bands used in wireless local area networks WLAN, Wimax, satellite communication, etc., in ultra-wideband, it is necessary to design an ultra-wideband filter having notch characteristics. In recent years, microstrip-ultra-wideband band-pass filters with notch characteristics have been referred to in many documents, and can be implemented by coupling resonators with stop-band effect, loading stubs, and the like, and the coupling of resonators with stop-band effect is most common because of its simple implementation, but still has the following defects and shortcomings: (1) poor passband effect (2) makes it difficult to adjust the characteristics of each notch individually.
For example, in 2017, "Multi Mode receiver based Triple Band UWB Filter" was published by prashan ran et al in the IEEE Microwave and wireless components Letters journal (vol.27, issue.2, feb.2017), and an ultra wideband Band pass Filter with three Notch characteristics was proposed, which is implemented by connecting a stepped impedance line and a bent short-circuit stub on a low impedance line, introducing two notches in the vicinity of the high impedance line and then connecting an opened stub at the bent portion of the short-circuit stub to implement a third Notch, which has good Notch characteristics but interference, resulting in poor pass Band effect of the Filter, and the frequencies of the three notches cannot be independently adjusted.
Disclosure of Invention
The invention aims to provide a microstrip ultra-wideband band-pass filter aiming at reducing the interference between trapped waves, reducing the insertion loss and realizing the independent adjustment of the frequency of a plurality of trapped waves in order to overcome the defects of the prior art.
In order to achieve the purpose, the invention adopts the technical scheme that:
a microstrip ultra-wideband band-pass filter comprises a dielectric substrate 1, a ring resonator 2 printed on the upper surface of the dielectric substrate 1 and a metal floor 3 printed on the lower surface of the dielectric substrate, wherein:
the ring resonator 2 comprises a ring microstrip structure, a first branch node which is connected with the ring microstrip structure and is positioned in the ring, and two second branch nodes which are positioned outside the ring, wherein the first branch node is parallel to an X axis of a two-dimensional coordinate system which takes the center of the ring microstrip structure as an origin, the space in the ring of the ring microstrip structure is divided into two parts, and the two second branch nodes are symmetrical about a Y axis;
a T-shaped resonator 4 is arranged in one space part in the annular microstrip structure ring, and the symmetry axis of the T-shaped resonator 4 is coincident with the Y axis;
two microstrip feed lines 5 are respectively arranged on two sides of the annular microstrip structure on the Y axis, a rectangular opening is arranged at the midpoint position of one end of each microstrip feed line 5 and in the length direction of the microstrip feed line 5, and two second branches connected with the annular microstrip structure are respectively embedded in the rectangular openings of the microstrip feed lines 5 at the corresponding positions to form an interdigital structure;
the outer sides of two long sides of one of the two microstrip feeder lines 5 are respectively provided with an S-shaped resonator 6, two sides of two long sides of the other microstrip feeder line are respectively provided with an I-shaped resonator 7, and the two S-shaped resonators 6 and the two I-shaped resonators 7 are symmetrical about the central axis of the short side of the microstrip feeder line 5 at the position where the two S-shaped resonators 6 and the two I-shaped resonators 7 are located;
the center of a branch in the annular microstrip structure, which is vertically intersected with the Y negative half shaft, is grounded through a metal through hole 8;
a rectangular gap 9 is etched at the projection position of the interdigital structure of the metal floor 3;
the two S-shaped resonators 6 and the two I-shaped resonators 7 are asymmetrically arranged about a Y axis, E-shaped slots 10 are etched in the microstrip feeder 5, the symmetry axis of the E-shaped slots 10 is overlapped with the central axis of the short side of the microstrip feeder 5 at the position, and the two E-shaped slots 10 are symmetrical about the Y axis.
In the microstrip ultra-wideband band-pass filter, the annular microstrip structure is divided into two space parts by the first branch, wherein the space part without the T-shaped resonator 4 is provided with the short-circuit branch connected with the annular microstrip structure and superposed with the Y axis, and the two third branches connected with the first branch and symmetrical about the Y axis, and the short-circuit branch is connected with the metal floor 3 through the metalized via hole.
In the microstrip ultra-wideband band-pass filter, the central axes of the two short sides of the second branch are parallel to the X axis.
In the microstrip ultra-wideband band-pass filter, the T-shaped resonator 4 is composed of the middle short-circuit branch 41 perpendicular to the X-axis and two first bent branches 42 symmetrical with respect to the middle short-circuit branch 41, one end of the middle short-circuit branch 41 is grounded through a metal through hole, and the other end of the middle short-circuit branch 41 is connected with the two first bent branches.
In the microstrip ultra-wideband band-pass filter, the S-shaped resonator 6 is composed of two second bent branches 61 which are symmetrical about a C-C axis and connected at a symmetrical axis, the connection is grounded through a metal via hole, and the C-C axis is perpendicular to the X axis.
In the microstrip ultra-wideband band-pass filter, the i-shaped resonator 7 is composed of a central microstrip line 71 perpendicular to the X axis, and a short-circuit branch 72 and a third bending branch 73 perpendicular to the central microstrip line 71, and two ends of the short-circuit branch 72 are grounded through metalized via holes.
Compared with the prior art, the invention has the following advantages:
1. the invention realizes the trap effect by the fact that the left microstrip feeder line is close to the two S-shaped resonators, the right microstrip feeder line is close to the two I-shaped resonators, and the middle of the ring resonator is close to the T-shaped resonator.
2. The invention has the advantages that the E-shaped gap etched on the microstrip feeder line can influence the current distribution on the surface of the microstrip feeder line, so that the microstrip feeder line has a slow wave effect and a coupling effect is enhanced, the insertion loss in a passband is reduced, and the in-band performance of a filter is further improved compared with the prior art.
Drawings
FIG. 1 is a schematic overall structure of an embodiment of the present invention;
FIG. 2 is a top view of the present invention;
FIG. 3 is a schematic diagram of the ring resonator and its accompanying stubs of FIG. 2;
FIG. 4(a) is an odd-mode equivalent circuit diagram of the ring resonator of the present invention;
FIG. 4(b) is an even mode equivalent circuit diagram of the ring resonator of the present invention;
FIG. 5 is a schematic diagram of the T-shaped resonator of FIG. 2;
FIG. 6 is an equivalent circuit diagram of odd-even mode of the T-type resonator of the present invention;
FIG. 7 is a schematic diagram of the S-type resonator of FIG. 2;
FIG. 8 is an equivalent circuit diagram of an S-type resonator of the present invention;
FIG. 9 is a schematic diagram of the I-shaped resonator of FIG. 2;
FIG. 10 is a schematic view of the lower surface of the present invention;
FIG. 11 is a graph of insertion loss versus return loss simulation results for the present invention;
FIG. 12 is a graph comparing insertion loss simulation results for the present invention and the prior art;
Detailed Description
The invention is described in further detail below with reference to the figures and the specific embodiments.
Referring to fig. 1, the present invention includes a dielectric substrate 1, an annular resonator 2 printed on an upper surface of the dielectric substrate 1, and a metal floor 3 on a lower surface, wherein the annular resonator 2 includes an annular microstrip structure, and a first branch located inside the ring and connected to the annular microstrip structure, and two second branches located outside the ring, where the first branch is parallel to an X-axis of a two-dimensional coordinate system with a center of the annular microstrip structure as an origin, and divides an intra-ring space of the annular microstrip structure into two parts, and the two second branches are symmetrical about a Y-axis; a T-shaped resonator 4 is arranged in a space part in the annular microstrip structure ring, and the symmetry axis of the T-shaped resonator 4 is superposed with the Y axis; two sides of the annular microstrip structure, which are positioned on the Y axis, are respectively provided with a microstrip feeder line 5, the midpoint position of one end of the microstrip feeder line 5 is provided with a rectangular opening along the length direction of the microstrip feeder line 5, and two second branches connected with the annular microstrip structure are respectively embedded in the rectangular openings of the microstrip feeder lines 5 at the corresponding positions to form an interdigital structure; the outer sides of two long sides of one of the two microstrip feeder lines 5 are respectively provided with an S-shaped resonator 6, two sides of two long sides of the other microstrip feeder line are respectively provided with an I-shaped resonator 7, and the two S-shaped resonators 6 and the two I-shaped resonators 7 are symmetrical about the central axis of the short side of the microstrip feeder line 5 at the position where the two S-shaped resonators 6 and the two I-shaped resonators 7 are located; the center of a branch in the annular microstrip structure, which is vertically intersected with the Y negative half shaft, is grounded through a metal through hole 8. A rectangular gap 9 is etched at the projection position of the interdigital structure of the metal floor 3; wherein:
the upper and lower bottom surfaces of the dielectric substrate 1 are metal layers, the middle is a low-loss dielectric substrate with the dielectric constant epsilon of 2.2, the example adopts Rogers RT/Duroid 5880, the thickness of the Rogers RT/Duroid 5880 is 1mm, the width W of the Rogers RT/Duroid is 18mm, and the length L of the Rogers RT/Duroid is 41.4 mm.
Referring to fig. 2, a ring resonator 2, a T-shaped branch 4, a microstrip feeder 5, an S-shaped resonator 6 and an i-shaped resonator 7 are printed on the upper surface of a dielectric substrate 1; the two S-shaped resonators 6 and the two I-shaped resonators 7 are asymmetrically arranged about the central axis of the whole filter, so that the interference among trapped waves is reduced; the microstrip feed line 5 is used for inputting and outputting signals and has a width W13mm, length L 18 mm; e-shaped slots 10 are etched on the microstrip feeder 5, the symmetry axis of the E-shaped slots 10 is coincident with the central axis of the short side of the microstrip feeder 5 at the position, the two E-shaped slots 10 are symmetrical about the central axis of the whole filter structure, the E-shaped slots 10 influence the current distribution on the surface of the microstrip feeder 5, so that the microstrip feeder 5 has a slow wave effect and enhances the coupling effect, the insertion loss in a passband is reduced, the in-band performance of the filter is further improved, and the width W of the microstrip feeder 5 is wide30.3mm, length L32.9mm apart by a distance S4=0.45mm。
Referring to fig. 3, the ring resonator 2 is used to generate a resonance point in a passband, and two open-circuit branches and one short-circuit branch are added to increase the resonance point and improve the passband effect; the process of calculating the size by the odd-even mode method is as follows:
according to its equivalent odd-even mode resonant circuit fig. 4, its odd mode input admittance can be written:
Figure GDA0002258622050000041
wherein:
Figure GDA0002258622050000042
Figure GDA0002258622050000051
even mode input admittance:
Figure GDA0002258622050000052
wherein:
Figure GDA0002258622050000053
Figure GDA0002258622050000054
(Yinoinput admittance for odd mode, YineFor even-mode input admittance, YiIs the admittance (i ═ 1,2 … 6) of the stepped impedance line, θjThe electrical length of the stepped impedance line (j ═ 1,2 … 6)), and Y at resonanceino=0,YineWhen being equal to 0, then made by
Figure GDA0002258622050000055
Calculating the length L of the branch knot21=8mm,L22=3.3mm,L24=2mm,L231.4mm, width W21=1mm,W22=1.3mm,W24=0.2mm,W260.4mm, through hole diameter R10.4 mm. At this time, the odd-mode resonance frequency fo1=4.8GHz,fo210GHz, even mode resonance frequency fe1=3.4GHz,fe2The four resonance points are uniformly distributed in a frequency band from 3.1GHz to 10.6GHz when the frequency band is 7.7 GHz; referring to fig. 2, the ultra-wideband filter is realized by introducing strong coupling through the interdigital structure and the defected ground structure, and the length L of the interdigital structure28mm, width W21mm, distance S from the ring resonator5=0.2mm。
Referring to fig. 5, the T-type resonator 4 is used to implement a notch in an 8GHz band (a satellite communication system band); the size is calculated by adopting an odd-even mode analysis method, and the calculation process is as follows:
according to its equivalent odd-even mode resonant circuitFig. 6, whose odd mode input admittance can be written: y isino=-jY1cotθ1Even mode input admittance:
Figure GDA0002258622050000056
(Yinoinput admittance for odd mode, YineFor even-mode input admittance, YiIs the admittance (i ═ 1,2) of the stepped impedance line, thetajThe electrical length (j ═ 1,2)) of the stepped impedance line, and Y at resonanceino=0,Y ine0, and then resonant frequency of even mode
Figure GDA0002258622050000057
Odd mode resonant frequency
Figure GDA0002258622050000058
Wherein e1=L41,e2=2L42-S42+S41+L43Calculating the diameter R of the through hole30.3mm, width W410.2mm, branch length L41=2mm,L42=2.5mm,L431.3mm, branch pitch S41=0.3mm,S420.2mm, directly spaced from the ring resonator 2 by S1=0.2mm。
Referring to fig. 7, the S-type resonator 6 is used to trap a 5.8GHz band (wireless local area network band), and its equivalent circuit diagram refers to fig. 8, and the resonant frequency can be calculatedWherein C is1Is the equivalent capacitance between the horizontal part microstrip line and the microstrip feed line 5, C2Is the equivalent capacitance L between the microstrip line and the metal floor 3 under the substrate1Equivalent inductance of the current through the metal via 8, here:
Figure GDA0002258622050000062
C2=2εdL61/h,
Figure GDA0002258622050000063
epsilon is the dielectric constant of the dielectric substrate, mu is the magnetic conductivity in vacuum, and h is the thickness of the metal plate; calculating C by calculation simulation software1=0.125pF,C2=0.765pF,L10.855nH, the width W can be finally calculated610.2mm, length L6114.2mm, through hole diameter R610.2mm away from the left microstrip feed line 5 by S2=0.2mm。
Referring to fig. 9, the i-shaped resonator 7 is used to trap a 6.8GHz band (radio frequency identification communication band), and has a width W710.2mm, length L71=0.6mm,L72=2.1mm,L734.7mm, through hole diameter R30.2mm away from the right microstrip feed line 5 by S3=0.2mm。
Referring to fig. 10, a rectangular gap 9 is etched in the metal floor 3 at the projection position of the interdigital structure, so as to form a defected ground structure, and strong coupling is introduced, wherein the width WG of the rectangular gap is 3.2mm, and the length LG of the rectangular gap is 7.3 mm.
The technical effects of the invention are further explained by simulation experiments as follows:
1. simulation conditions and contents:
the insertion loss and the return loss of the invention are simulated by using commercial simulation software HFSS 15.0, a simulation result graph is shown in FIG. 11, the simulation results of the insertion loss of the invention and the insertion loss of the prior art are compared, and a comparison result graph is shown in FIG. 12.
2. And (3) simulation result analysis:
referring to FIG. 11, the center frequency of the filter is at f0At 6.85GHz, 3dB operating bandwidth slave f13GHz to f210.65GHz, relatively broadband FWB (f)1-f2)/f0111.68%; the in-band insertion loss is lower than 0.68dB, the return loss in a working broadband is better than 10dB, the center frequencies of the three trapped waves are respectively 5.8GHz, 6.8GHz and 8GHz, wherein the attenuation at the 5.8GHz frequency band is more than 19dB, the attenuation at the 6.8GHz frequency band is more than 19dB, the attenuation at the 8GHz frequency band is more than 28dB, the frequency ranges of relative stop bands with the attenuation reaching 3dB are respectively 5.75GHz-5.95GHz, 6.6GHz-6.9GHz and 7.8GHz-8.3GHzThe relative bandwidth is respectively 3.4%, 4.4% and 6.25%, and the bandwidth requirement of the notch frequency band is met.
Referring to fig. 12, compared with the transmission characteristic of the existing ultra-wideband band-pass filter with the triple-notch characteristic, the insertion loss of the invention is lower than 0.68dB, the insertion loss of the existing technology is lower than 1dB, and the comparison simulation results show that the interference of the three notches of the invention is reduced, and the effect in the pass band is excellent.
The above description is only a preferred embodiment of the present invention, but not limited to the above embodiments, and it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the inventive concept of the present invention.

Claims (6)

1. A microstrip ultra-wideband band-pass filter comprises a dielectric substrate (1), a ring resonator (2) printed on the upper surface of the dielectric substrate (1) and a metal floor (3) on the lower surface, wherein:
the ring resonator (2) comprises a ring microstrip structure, a first branch node which is connected with the ring microstrip structure and is positioned in the ring, and two second branch nodes which are positioned outside the ring, wherein the first branch node is parallel to an X axis of a two-dimensional coordinate system which takes the center of the ring microstrip structure as an origin, the space in the ring of the ring microstrip structure is divided into two parts, and the two second branch nodes are symmetrical about a Y axis;
a T-shaped resonator (4) is arranged in one space part in the annular microstrip structure ring, and the symmetry axis of the T-shaped resonator (4) is coincident with the Y axis;
the two sides of the annular microstrip structure, which are positioned on the Y axis, are respectively provided with a microstrip feeder line (5), the middle point position of one end of each microstrip feeder line (5) is provided with a rectangular opening along the length direction of the microstrip feeder line (5), and two second branches connected with the annular microstrip structure are respectively embedded in the rectangular openings of the microstrip feeder lines (5) at the corresponding positions to form an interdigital structure;
the outer sides of two long sides of one of the two microstrip feeder lines (5) are respectively provided with an S-shaped resonator (6), the two sides of the other two long sides are respectively provided with an I-shaped resonator (7), and the two S-shaped resonators (6) and the two I-shaped resonators (7) are symmetrical about the central axis of the short side of the microstrip feeder line (5) at the position where the two S-shaped resonators (6) and the two I-shaped resonators (7) are located;
the center of a branch in the annular microstrip structure, which is vertically intersected with the Y negative half shaft, is grounded through a metal through hole (8);
a rectangular gap (9) is etched at the projection position of the metal floor (3) in the interdigital structure;
the microstrip line resonator is characterized in that the two S-shaped resonators (6) and the two I-shaped resonators (7) are asymmetrically arranged about a Y axis, E-shaped slots (10) are etched in the microstrip feed lines (5), the symmetry axes of the E-shaped slots (10) are overlapped with the central axis of the short sides of the microstrip feed lines (5) at the positions, and the two E-shaped slots (10) are symmetrical about the Y axis.
2. The microstrip ultra-wideband bandpass filter according to claim 1, wherein: the annular microstrip structure is divided into two space parts by a first branch, wherein the space part without the T-shaped resonator (4) is provided with a short-circuit branch which is connected with the annular microstrip structure and is superposed with a Y axis and two third branches which are connected with the first branch and are symmetrical about the Y axis, and the short-circuit branch is connected with the metal floor (3) through a metallized through hole.
3. The microstrip ultra-wideband bandpass filter according to claim 1, wherein: the central axes of the two short sides of the first branch section are superposed with the X axis.
4. The microstrip ultra-wideband bandpass filter according to claim 1, wherein: the T-shaped resonator (4) is composed of a middle short-circuit branch (41) perpendicular to an X axis and two first bent branches (42) symmetrical with respect to the middle short-circuit branch (41), one end of the middle short-circuit branch (41) is grounded through a metal through hole, and the other end of the middle short-circuit branch is connected with the two first bent branches.
5. The microstrip ultra-wideband bandpass filter according to claim 1, wherein: the S-type resonator (6) is composed of two second bent branches (61) which are symmetrical about a C-C 'axis and connected at a symmetrical axis, the connection position is grounded through a metal through hole, and the C-C' axis is perpendicular to the X axis.
6. The microstrip ultra-wideband bandpass filter according to claim 1, wherein: the I-shaped resonator (7) is composed of a central microstrip line (71) perpendicular to an X axis, and a short-circuit branch (72) and a third bending branch (73) perpendicular to the central microstrip line (71), wherein two ends of the short-circuit branch (72) are grounded through metalized via holes.
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CN207165728U (en) * 2017-10-10 2018-03-30 成都大学 A kind of compact-sized ultra wide band bandpass filter
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