CN109638395A - A kind of micro band superwide band bandpass filter - Google Patents
A kind of micro band superwide band bandpass filter Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/20327—Electromagnetic interstage coupling
- H01P1/20354—Non-comb or non-interdigital filters
- H01P1/20381—Special shape resonators
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Abstract
The invention proposes a kind of micro band superwide band bandpass filters, for solving the problems, such as existing micro band superwide band bandpass filter passband effect difference and being difficult to individually adjust the characteristic of each trap.Including medium substrate, it is printed on the toroidal cavity resonator of medium substrate upper surface and the metal floor of lower surface；A microstrip feed line is respectively arranged in the two sides that T-type resonator and its Y-axis are provided in the toroidal cavity resonator, E type gap is provided on microstrip feed line, a S type resonator is respectively arranged in one microstrip feed line two sides, an I-shaped resonator is respectively arranged in another two sides, the asymmetric arrangement of symmetry axis of two S type resonators and two I-shaped resonators about entire filter, short-circuit minor matters are grounded by metallic vias；Rectangular aperture is etched on metal floor；The present invention works well with passband, and three traps are separately adjustable.
Description
Technical field
The invention belongs to microwave communication device arts, are related to a kind of ultra wide band bandpass filter, and in particular to a kind of
Micro band superwide band bandpass filter with trap effect, can be used for the design of microwave and millimeter wave circuit.
Background technique
With the fast development of the communication technology, super broad band radio communication is big by its spatial content, transmission speed is fast, power consumption
It is high, processing gain is high, the advantages that having a safety feature makes it possess huge development potentiality.Filter is as the weight in microwave system
Component part is wanted, performance is directly related to the performance of whole system.Traditional bandpass filter is generally divided into planar microstrip, band
Shape cable architecture filter and metal waveguide structure filter.Though metal waveguide structure filter Q value is high, power capacity is big, loss
It is small, but its is bulky, it is difficult to be integrated with other microwave circuits and be difficult to realize minimize.Band-like line impedence is easy to control, shields
Effect is good, is easily integrated and easy to process, but transmitting signal speed is slow.Microstrip line remains strip line filter and is easy to collect
At with the advantages such as easy to process, and have both small in size, light-weight, bandwidth, the advantages that transmitting signal speed is fast, be now subjected to
Extensive concern and application.
Since there are the frequency ranges that WLAN WLAN, Wimax and satellite communication etc. have been used in ultra wide band, need
Design the ultra-wide band filter with trap characteristic.In recent years, the micro band superwide band bandpass filtering with trap characteristic
Involved by device has in many documents, there can be the modes such as resonator, the load minor matters of stopband effect realize with coupling, due to
Coupling, there is the mode of stopband effect resonator to realize simply, therefore most commonly seen, but still have following defect and deficiency: (1)
Passband effect poor (2) is difficult to individually adjust the characteristic of each trap.
For example, 2017, Prashant Ranjan et al. is in IEEE Microwave and Wireless
" Multi Mode Resonators has been delivered on Components Letters periodical (Vol.27, Issue.2, Feb.2017)
Based Triple Band Notch UWB Filter ", proposes a kind of ultra wide band bandpass filtering with three trap characteristics
Device connects the short-circuit minor matters of bending by stepped impedance line and on low-impedance line to realize ultra wide band bandpass filter, in height
Two traps are introduced near impedance line close to an E type resonator, then by connecting in the bending place for bending short-circuit minor matters
Open circuit minor matters, realize third trap, with good trap characteristic, but trap has interference, and the passband of filter is caused to be imitated
Fruit is poor, and the frequency of three traps cannot be separately adjustable.
Summary of the invention
It is an object of the invention in view of the above shortcomings of the prior art, provide a kind of micro band superwide band bandpass filter,
It is intended to reduce the interference between trap, while reducing insertion loss, and realize the separately adjustable of more trap frequencies.
To achieve the above object, the technical scheme adopted by the invention is as follows:
A kind of micro band superwide band bandpass filter including medium substrate 1, is printed on the annular humorous of 1 upper surface of medium substrate
The metal floor 3 of vibration device 2 and lower surface, in which:
The toroidal cavity resonator 2 includes annular microstrip structure, and the in ring connect with annular microstrip structure
One minor matters and two the second minor matters outside ring, first minor matters are sat with by the two dimension of origin of annular microstrip structure center
The X-axis for marking system is parallel, space in the ring of annular microstrip structure is divided into two parts, described two second minor matters are about Y-axis
Symmetrically；
A space segment in the annular microstrip structure ring is provided with T-type resonator 4, the T-type resonator 4 it is symmetrical
Axis is overlapped with Y-axis；
A microstrip feed line 5 is respectively arranged in the two sides that the annular microstrip structure is located at Y-axis, 5 one end midpoint of microstrip feed line
Position and rectangular aperture is provided with along the length direction of the microstrip feed line 5, two second of the annular microstrip structure connection
Minor matters are embedded in respectively in the rectangular aperture of corresponding position microstrip feed line 5, form interdigital structure；
One S type resonator 6 of each setting on the outside of one two long side in described two microstrip feed lines 5, another two
A long side two sides be respectively arranged an I-shaped resonator 7, two S type resonators 6 and two I-shaped resonators 7 about it is in place
The short side central axes for the microstrip feed line 5 set are symmetrical；
The short circuit minor matters are grounded by metallic vias 8；
The projected position that the metal floor 2 is located at interdigital structure is etched with rectangular aperture 9；
Described two S type resonators 6 and two I-shaped resonators 7 are about the asymmetric arrangement of Y-axis, the microstrip feed line 5
On be etched with E type gap 10, the short side central axes of the microstrip feed line 5 of the symmetry axis and position in E type gap 10 are overlapped, and two
A E type gap 10 is symmetrical about Y-axis.
A kind of above-mentioned micro band superwide band bandpass filter is not provided with T-type resonator 4 in the annular microstrip structure ring
Space segment is provided with the short-circuit minor matters for connecting and being overlapped with Y-axis with annular microstrip structure, and is connected and closes with the first minor matters
In the symmetrical two third minor matters of Y-axis, the short circuit minor matters are connected by metallization VIA with metal floor.
A kind of above-mentioned micro band superwide band bandpass filter, second minor matters, the central axes of two short side and X-axis are flat
Row.
A kind of above-mentioned micro band superwide band bandpass filter, the T-type resonator 4, by the intermediate short-circuit minor matters vertical with X-axis
41 and two be bent minor matters 42 about intermediate short-circuit minor matters 41 symmetrical first and form, described intermediate open circuit 41 one end of minor matters passes through
Metal throuth hole ground connection, the other end are connect with two first bending minor matters.
A kind of above-mentioned micro band superwide band bandpass filter, the S type resonator 6, by two about C-C ' axial symmetry and
The second Bending minor matters 61 composition connected at symmetry axis, junction are grounded by metallic vias, and wherein C-C ' axis is vertical with X-axis.
A kind of above-mentioned micro band superwide band bandpass filter, the I-shaped resonator 7, by the center micro-strip vertical with X-axis
Line 71, and short-circuit minor matters 72 vertical with center microstrip line 71 respectively and third bending minor matters 73 form, the short circuit minor matters
72 both ends are grounded by metallization VIA.
Compared with prior art, the present invention having the advantage that
1. the present invention is by the way that in left side microstrip feed line, close to two S type resonators, right side microstrip feed line is close to two works
Font resonator realizes trap effect close to a T-type resonator among toroidal cavity resonator, due to two S type resonators and
Two I-shaped resonators are asymmetric arrangement about the symmetry axis of entire filter, reduce the interference between trap, and existing
There is technology to compare, effectively increases realizing with interior performance simultaneously because different resonators controls different traps for filter
It is separately adjustable between each trap.
2. the present invention makes since the E type gap etched on microstrip feed line can influence the current distribution on microstrip feed line surface
It enhances coupling effect with Slow-wave effect, therefore the insertion loss in passband reduces, and compared with prior art, further mentions
High filter with interior performance.
Detailed description of the invention
Fig. 1 is the overall structure diagram of the embodiment of the present invention；
Fig. 2 is upper surface schematic diagram of the invention；
Fig. 3 is toroidal cavity resonator and its structural schematic diagram of attached minor matters in Fig. 2；
Fig. 4 (a) is the odd mould equivalent circuit diagram of toroidal cavity resonator of the invention；
Fig. 4 (b) is the even mould equivalent circuit diagram of toroidal cavity resonator of the invention；
Fig. 5 is the structural schematic diagram of T-type resonator in Fig. 2；
Fig. 6 is T-type resonator parity mode equivalent circuit diagram of the invention；
Fig. 7 is the structural schematic diagram of S type resonator in Fig. 2；
Fig. 8 is the equivalent circuit diagram of S type resonator of the invention；
Fig. 9 is the structural schematic diagram of I-shaped resonator in Fig. 2；
Figure 10 is the structural schematic diagram of lower surface of the invention；
Figure 11 is to insertion loss and return loss simulation result diagram of the invention；
Figure 12 is present invention figure compared with prior art insertion loss simulation result；
Specific embodiment
In the following with reference to the drawings and specific embodiments, present invention is further described in detail.
Referring to Fig.1, the present invention includes medium substrate 1, the toroidal cavity resonator 2 and following table for being printed on 1 upper surface of medium substrate
The metal floor 3 in face, wherein toroidal cavity resonator 2 includes annular microstrip structure, and connect with annular microstrip structure positioned at ring
The first interior minor matters and two the second minor matters outside ring, here the first minor matters with using annular microstrip structure center as origin
The X-axis of two-dimensional coordinate system is parallel, space in the ring of annular microstrip structure is divided into two parts, two the second minor matters are about Y
Axial symmetry；A space segment in annular microstrip structure ring is provided with T-type resonator 4, the symmetry axis and Y of the T-type resonator 4
Overlapping of axles；A microstrip feed line 5 is respectively arranged in the two sides that annular microstrip structure is located at Y-axis, 5 one end midpoint of microstrip feed line and
Rectangular aperture is provided with along the length direction of the microstrip feed line 5, two the second minor matters of annular microstrip structure connection are inlayed respectively
In the rectangular aperture of corresponding position microstrip feed line 5, interdigital structure is formed；One two long side in two microstrip feed lines 5
A S type resonator 6 is respectively arranged in outside, and an I-shaped resonator 7, two S types are respectively arranged in another two long side two sides
Resonator 6 and two I-shaped resonators 7 are symmetrical about the short side central axes of the microstrip feed line 5 of position；Short-circuit minor matters are logical
Cross the ground connection of metallic vias 8；The projected position that metal floor 2 is located at interdigital structure is etched with rectangular aperture 9；Wherein:
The upper bottom surface of the medium substrate 1 is metal layer, and centre is that dielectric constant is the low loss dielectric substrate of ε=2.2,
This example is using Rogers RT/Duroid 5880, with a thickness of h=1mm, width W=18mm, length L=41.4mm.
Referring to Fig. 2, the upper surface of medium substrate 1 is printed with toroidal cavity resonator 2, T-type minor matters 4, microstrip feed line 5, S type resonance
Device 6 and I-shaped resonator 7；Here the axis of two S type resonators 6 and two I-shaped resonators 7 about entire filter
Line is in asymmetric arrangement, reduces the interference between each trap；Microstrip feed line 5 is used to realize the input and output of signal, wide
Spend W1=3mm, length L1=8mm；It is etched with E type gap 10 on microstrip feed line 5, the symmetry axis in E type gap 10 and position
The short side central axes of microstrip feed line 5 are overlapped, and two E type gaps 10 are symmetrical about the central axes of entire filter construction, the E type
Gap 10 affects the current distribution on 5 surface of microstrip feed line, and microstrip feed line 5 is made to have Slow-wave effect, enhances coupling effect, therefore
Insertion loss in passband reduces, further improve filter with interior performance, width W3=0.3mm, length L3=
2.9mm, interval S4=0.45mm.
Referring to Fig. 3, the toroidal cavity resonator 2 is used to generate the resonance point in passband, by increase by two open circuit minor matters with
One short-circuit minor matters, increases resonance point, improves passband effect；The process for calculating size using the method for parity mode is as follows:
According to its equivalent parity mode resonance circuit Fig. 4, its odd mould input admittance can be written:Wherein: Even mould input admittance:Wherein: (YinoFor surprise
Mould input admittance, YineFor even mould input admittance, YiFor the admittance of stepped impedance line, (i=1,2 ... 6), θjFor stepped impedance line
Electrical length (j=1,2 ... 6)), Y when resonanceino=0, Yine=0, then byIt can be calculated minor matters length L21=8mm, L22
=3.3mm, L24=2mm, L23=1.4mm, width W21=1mm, W22=1.3mm, W24=0.2mm, W26=0.4mm, through-hole are straight
Diameter R1=0.4mm.At this point, odd mould resonance frequency fo1=4.8GHz, fo2=10GHz, even mould resonance frequency fe1=3.4GHz, fe2
=7.7GHz, four resonance points are evenly distributed in 3.1GHz=10.6GHz frequency band；Referring to Fig. 2, pass through interdigital structure and defect
Ground structure introduces close coupling, realizes ultra-wide band filter, the length L of interdigital structure2=8mm, width W2=1mm, with annular resonance
The interval S of device5=0.2mm.
Referring to Fig. 5, the T-type resonator 4 is used to realize the trap of 8GHz frequency range (satellite communication system frequency range)；Using surprise
Even mould analytic approach calculates size, and calculating process is as follows:
According to its equivalent parity mode resonance circuit Fig. 6, its odd mould input admittance: Y can be writtenino=-jY1cotθ1, even mould is defeated
Enter admittance:(YinoFor odd mould input admittance, YineFor even mould input admittance, YiFor ladder resistance
The admittance (i=1,2) of anti-line, θjFor the electrical length (j=1,2) of stepped impedance line), Y when resonanceino=0, Yine=0, then by idol
Mould resonance frequencyOdd mould resonance frequencyWherein e1=L41, e1=
2L42-S42+S41+L43, can be calculated through-hole diameter R3=0.3mm, width W41=0.2mm, minor matters length L41=2mm, L42=
2.5mm, L43=1.3mm, minor matters interval S41=0.3mm, S42Direct spacing is among=0.2mm, with toroidal cavity resonator 2
S1=0.2mm.
Referring to Fig. 7, the S type resonator 6 is used to realize the trap of 5.8GHz (wireless local area network band) frequency range, equivalent
Circuit diagram can calculate its resonance frequency referring to 8Wherein C1It is presented for horizontal component microstrip line and micro-strip
Equivalent capacity between line 5, C2For the equivalent capacity between microstrip line and substrate lower metal floor 3, L1Pass through metal for electric current
The equivalent inductance of through-hole 8, here:C2=2 ε dL61/ h,ε is medium
The dielectric constant of substrate, μ are the magnetic conductivity in vacuum；C is calculated to obtain by computer sim- ulation software1=0.125pF, C2=
0.765pF, L1Its width W can be finally calculated in=0.855nH61=0.2mm, length L61=14.2mm, through-hole diameter R61
It is S at a distance from=0.2mm, with left side microstrip feed line 52=0.2mm.
Referring to Fig. 9, the I-shaped resonator 7 is used to realize the trap of 6.8GHz (radio frequency identification communications band) frequency range,
Its width W71=0.2mm, length L71=0.6mm, L72=2.1mm, L73=4.7mm, through-hole diameter R3=0.2mm, it is micro- with right side
The distance of ribbon feeder 5 is S3=0.2mm.
Referring to Fig.1 0, the projected position that the metal floor 2 is located at interdigital structure is etched with rectangular aperture 9, forms defect
Ground structure introduces close coupling, the rectangular aperture width WG=3.2mm, length LG=7.3mm.
Below by way of emulation experiment, technical effect of the invention is described further:
1. simulated conditions and content:
It is emulated using business simulation software HFSS 15.0, insertion loss of the invention is imitated with return loss
Very, simulation result diagram is as shown in figure 11, the present invention and the simulation result of prior art insertion loss is compared, comparison result
Figure is as shown in figure 12.
2. analysis of simulation result:
Referring to Fig.1 1, the centre frequency of filter is in f0At=6.85GHz, 3dB operating bandwidth is from f1=3GHz to f2=
10.65GHz, relatively wide band FWB=(f1-f2)/f0=111.68%；In-band insertion loss is lower than 0.68dB, in operating bandwidth
Return loss is better than 10dB, and the centre frequency of three traps is respectively 5.8GHz, 6.8GHz and 8GHz, wherein at 5.8GHz frequency range
Decaying is greater than 19dB, and decaying is greater than 19dB at 6.8GHz frequency range, and the decaying at 8GHz frequency range is greater than 28dB, and decaying reaches 3dB's
The frequency range of opposite stopband is respectively 5.75GHz-5.95GHz, 6.6GHz-6.9GHz and 7.8GHz-8.3GHz, relative bandwidth
Respectively 3.4%, 4.4%, 6.25%, meet the bandwidth requirement of trap frequency.
Referring to Fig.1 2, the present invention compared with the existing ultra wide band bandpass filter transmission characteristic with three trap characteristics,
Insertion loss of the invention is lower than 0.68dB, and the insertion loss of the prior art is lower than 1dB, the above contrast simulation the result shows that, this
The interference reduction of three traps of invention, excellent effect in passband.
Above description is only a preferred embodiment of the present invention, but is not merely restricted to the described embodiments, right
For those skilled in the art, several deformations for being made under the premise of not departing from innovation thinking of the present invention and change
Into all belonging to the scope of protection of the present invention.
Claims (6)
1. a kind of micro band superwide band bandpass filter, including medium substrate (1), it is printed on the annular of medium substrate (1) upper surface
The metal floor (3) of resonator (2) and lower surface, in which:
The toroidal cavity resonator (2) includes annular microstrip structure, and first be located in ring connecting with annular microstrip structure
Minor matters and two the second minor matters outside ring, first minor matters with using annular microstrip structure center as the two-dimensional coordinate of origin
The X-axis of system is parallel, space in the ring of annular microstrip structure is divided into two parts, described two second minor matters are about Y-axis pair
Claim；
A space segment in the annular microstrip structure ring is provided with T-type resonator (4), the T-type resonator (4) it is symmetrical
Axis is overlapped with Y-axis；
A microstrip feed line (5) is respectively arranged in the two sides that the annular microstrip structure is located at Y-axis, microstrip feed line (5) one end midpoint
Position and rectangular aperture is provided with along the length direction of the microstrip feed line (5), two of the annular microstrip structure connection the
Two minor matters are embedded in respectively in the rectangular aperture of corresponding position microstrip feed line (5), form interdigital structure；
One S type resonator (6) of each setting on the outside of one two long side in described two microstrip feed lines (5), another two
A long side two sides be respectively arranged an I-shaped resonator (7), two S type resonators (6) and two I-shaped resonators (7) about
The short side central axes of the microstrip feed line (5) of position are symmetrical；
The short circuit minor matters are grounded by metallic vias (8)；
The projected position that the metal floor (2) is located at interdigital structure is etched with rectangular aperture (9)；
It is characterized in that, described two S type resonators (6) and two I-shaped resonators (7) are about the asymmetric arrangement of Y-axis, institute
It states and is etched with E type gap (10) on microstrip feed line (5), the microstrip feed line (5) of the symmetry axis and position in E type gap (10)
Short side central axes are overlapped, and two E type gaps (10) are symmetrical about Y-axis.
2. a kind of micro band superwide band bandpass filter according to claim 1, it is characterised in that: the annular micro-strip knot
Structure is not provided with the space segment of T-type resonator (4) in ring, is provided with and connect with annular microstrip structure and be overlapped with Y-axis
Short-circuit minor matters, and be connected with the first minor matters and about the symmetrical two third minor matters of Y-axis, the short circuit minor matters pass through metallization
Via hole is connected with metal floor (3).
3. a kind of micro band superwide band bandpass filter according to claim 1, it is characterised in that: first minor matters,
The central axes of two short sides are overlapped with X-axis.
4. a kind of micro band superwide band bandpass filter according to claim 1, it is characterised in that: the T-type resonator
(4), by the intermediate short-circuit minor matters (41) vertical with X-axis and two about the intermediate short-circuit symmetrical first bending minor matters of minor matters (41)
(42) it forms, described intermediate open circuit minor matters (41) one end is grounded by metal throuth hole, and the other end and two first bending minor matters connect
It connects.
5. a kind of micro band superwide band bandpass filter according to claim 1, it is characterised in that: the S type resonator
(6), the second Bending minor matters (61) connected by two about C-C ' axial symmetry and at symmetry axis form, and junction passes through metal
Via hole ground connection, wherein C-C ' axis is vertical with X-axis.
6. a kind of micro band superwide band bandpass filter according to claim 1, it is characterised in that: the I-shaped resonator
(7), by the center microstrip line (71) vertical with X-axis, and short-circuit minor matters (72) vertical with center microstrip line (71) respectively and
Third is bent minor matters (73) composition, and the both ends of the short circuit minor matters (72) are grounded by metallization VIA.
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| CN201811489456.3A CN109638395B (en) | 2018-12-06 | 2018-12-06 | Microstrip ultra wide band pass filter |
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| CN111092283A (en) * | 2020-01-03 | 2020-05-01 | 西安电子科技大学 | Ultra-wideband band-pass filter with adjustable trapped wave and application |
| WO2022049525A1 (en) * | 2020-09-02 | 2022-03-10 | Khalifa University of Science and Technology | Balanced bandpass filters for millimeter-wave applications |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111092283A (en) * | 2020-01-03 | 2020-05-01 | 西安电子科技大学 | Ultra-wideband band-pass filter with adjustable trapped wave and application |
| CN111092283B (en) * | 2020-01-03 | 2021-04-06 | 西安电子科技大学 | Ultra-wideband band-pass filter with adjustable trapped wave and application |
| WO2022049525A1 (en) * | 2020-09-02 | 2022-03-10 | Khalifa University of Science and Technology | Balanced bandpass filters for millimeter-wave applications |
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| CN109638395B (en) | 2020-02-07 |
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