CN220474866U - N-order quarter-wavelength high out-of-band rejection filter structure and filter - Google Patents
N-order quarter-wavelength high out-of-band rejection filter structure and filter Download PDFInfo
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- 239000002184 metal Substances 0.000 claims abstract description 57
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Abstract
The utility model relates to an N-order quarter-wavelength high-band out-of-band rejection filter structure and a filter, which comprise N resonators, wherein each resonator comprises a top metal layer, a middle dielectric layer and a bottom metal layer, the top metal layer and the bottom metal layer are mutually parallel, through holes are correspondingly formed in the middle dielectric layer, the top metal layer and the bottom metal layer, the through holes are vertically formed, the through holes are round through holes, metal plating layers are arranged on the inner ring surfaces of the through holes, and the metal plating layers are connected with the bottom metal layer to form a short-circuit end; the N resonance single via holes are provided with metal layers which are connected with the bottom metal plate to form a short-circuit end. Coupling lines are arranged between the elements, the number of the coupling lines is N-1, two adjacent resonators are connected through the coupling lines, and the coupling lines are of rectangular structures. The utility model is provided with the coupling line, and the electric coupling path of the main mode is introduced by regulating and controlling the position of the coupling line, and the electric coupling path of the parasitic passband is restrained, so that the performance of high out-of-band restraint is realized, the electric coupling structure is flexible, and the circuit is simpler.
Description
Technical Field
The utility model relates to the technical field of electromagnetic fields and microwaves, in particular to an N-order quarter-wavelength high-out-of-band rejection filter structure, a quarter-wavelength uniform-impedance high-out-of-band rejection electric coupling filter and a quarter-wavelength SIR high-out-of-band rejection electric coupling filter.
Background
At present, the magnetic theory and the microwave millimeter wave technology are widely applied to the fields of civil use, industry and the like. The microwave millimeter wave technology is widely developed in electronic systems such as medical imaging systems, radar communication systems, high-speed wireless communication systems, remote sensing telemetry systems and the like. The filter is used as a working device of the radio frequency front end, can filter noise and spurious frequencies in a channel, and plays a vital role in the whole communication system. With the high-speed development of the whole communication system, the high-speed communication system has higher requirements on the quality, volume, high selectivity, high integration level, high out-of-band rejection and the like of the filter. Many scholars at home and abroad have made a great deal of research work in the aspect of out-of-band rejection of filters. The most common method is the defected ground method (DGS) which can make various forms of slots to achieve the effect of filtering out spurious pass-bands depending on the surface circuit conditions without changing the microstrip surface size. However, the introduction of the DGS circuit increases the insertion loss and causes the in-band ripple to be poor.
The traditional technology has the following technical problems:
the over-coupling structure method utilizes the over-coupling of the input and output stages to compensate the phase velocity difference of the odd mode and the even mode, and generates zero at the frequency doubling position, thereby achieving the aim of restraining harmonic waves. But such filters can greatly increase the size of the circuit. The dielectric substrate covering method utilizes high dielectric constant medium to have larger influence on odd mode and smaller influence on even mode of the microstrip line so as to play a role of balancing, and the phase difference of odd and even modes is balanced to be less than thousandth, thereby eliminating the generation of parasitic passband. However, the electric field around the microstrip line of the filter changes, so that the center frequency shifts greatly. The generalized chebyshev filter can be easily realized by adopting a method of cross coupling between resonators, and the method has been widely applied at present. This design method is commonly used in waveguide filter design or hairpin filter, but requires an increase in the order of the filter, which results in an increase in size and loss.
Disclosure of Invention
The utility model provides an N-order quarter-wavelength high out-of-band rejection filter structure, which aims to solve the problems of larger center frequency drift of the existing filter and increased size and loss caused by increasing the order of the filter.
In order to achieve the above objective, a first aspect of the present utility model provides an N-order quarter-wavelength high-band rejection filter structure, which includes N resonators, where the resonators include a top metal layer, an intermediate dielectric layer, and a bottom metal layer, the top metal layer and the bottom metal layer are parallel to each other, the intermediate dielectric layer, the top metal layer, and the bottom metal layer are correspondingly provided with vias, the vias are vertically provided, the vias are circular through holes, a metal plating layer is disposed on an inner ring surface of the via holes, and the metal plating layer is connected with the bottom metal layer to form a short-circuit end;
coupling lines are arranged among the N resonators, the number of the coupling lines is N-1, two adjacent resonators are connected through the coupling lines, the coupling lines are of rectangular structures, and the coupling lines are used for introducing electric coupling paths of a main mode and inhibiting electric coupling paths of a parasitic passband;
n resonators are connected through N-1 coupling line arrays to form an N-order filter, the input end of the first resonator of the array is used as the input port of the N-order filter, the output end of the N-th resonator of the array is used as the output port of the N-order filter, N is more than or equal to 2, N is a positive integer and comprises N resonators, each resonator comprises a top metal layer, a middle dielectric layer and a bottom metal layer, the top metal layer and the bottom metal layer are parallel to each other, through holes are correspondingly formed in the middle dielectric layer, the top metal layer and the bottom metal layer, the through holes are vertically formed, the through holes are round through holes, metal plating layers are arranged on the inner annular surfaces of the through holes, and are connected with the bottom metal layers to form a short-circuit end;
coupling lines are arranged among the N resonators, the number of the coupling lines is N-1, two adjacent resonators are connected through the coupling lines, the coupling lines are of rectangular structures, and the coupling lines are used for introducing electric coupling paths of a main mode and inhibiting electric coupling paths of a parasitic passband;
n resonators are connected through N-1 coupling line arrays to form an N-order filter, the input end of the first resonator of the array is used as the input port of the N-order filter, the output end of the N-th resonator of the array is used as the output port of the N-order filter, N is more than or equal to 2, and N is a positive integer.
Further, the input port and the output port of the N-order filter are formed by microstrip transmission lines and are arranged on the top metal layer.
The second aspect of the utility model provides a quarter-wavelength uniform-impedance high out-of-band rejection electric coupling filter, which comprises an N-order quarter-wavelength high out-of-band rejection electric coupling filter structure, wherein the resonator is of an N-type structure, and the via hole is arranged close to the curve side.
Further, the coupling line is disposed at a side far from the short-circuited end, and a distance between the coupling line and the short-circuited end is about 2/3 times a resonator length.
A third aspect of the present utility model proposes a quarter-wavelength SIR high out-of-band rejection electrically coupled filter comprising an N-order quarter-wavelength high out-of-band rejection electrically coupled filter structure, the resonator being provided with a high impedance line and a low impedance line, an impedance ratio being provided between the high impedance line and the low impedance line.
Further, the resonator is of an inverted convex structure, and the via hole is arranged at a position close to a high-impedance line of the resonator.
Further, the coupling line is arranged at the low impedance line position, and the distance between the coupling line and the short-circuit end is about 1/2 times of the length of the outer convex end of the resonator.
Through the technical scheme, the utility model has the beneficial effects that:
(1) The utility model provides an N-order quarter-wavelength high out-of-band rejection filter structure, which is characterized in that a coupling line is added and the position of the coupling line is regulated so as to achieve the electric coupling path of a main mode and inhibit an electric coupling path of a parasitic passband, and the parasitic passband is inhibited at a 4-frequency multiplication position or a 5-frequency multiplication position, so that the high out-of-band rejection performance is realized.
(2) The utility model increases the order of the filter in a cascading way, has flexible electric coupling structure and simpler circuit.
(3) The utility model obtains the quarter-wavelength uniform-impedance high-out-of-band rejection electric coupling filter through the N-order quarter-wavelength high-out-of-band rejection filter structure.
(4) The utility model obtains the quarter-wavelength SIR high out-of-band rejection electric coupling filter through the N-order quarter-wavelength high out-of-band rejection filter structure. The center frequencies of the mode one and the mode two of the resonance unit are 4 times different by regulating the impedance ratio of the high impedance line to the low impedance line, then the electric coupling path of the main mode is introduced between the adjacent resonator low impedance microstrip lines through regulating the position of the coupling line, and the electric coupling path of the parasitic passband is restrained, so that the parasitic passband is restrained at the 5 frequency multiplication position, the stop band bandwidth is further widened, and the high out-of-band restraint performance is realized.
Drawings
FIG. 1 is a schematic diagram of a second-order quarter-wavelength uniform-impedance high-out-of-band rejection electric coupling filter based on coupled line connection;
FIG. 2 is an S-parameter diagram of a second-order quarter-wavelength uniform-impedance high-out-of-band rejection electric-coupling filter based on coupled line connection according to the present utility model;
FIG. 3 is a schematic diagram of a third-order quarter-wavelength uniform-impedance high-out-of-band rejection electric-coupling filter based on coupled line connection;
FIG. 4 is a graph of S parameters of a third-order quarter-wavelength uniform impedance high out-of-band rejection electrically coupled filter based on coupled line connection in accordance with the present utility model;
FIG. 5 is a schematic diagram of a second-order quarter-wavelength SIR high out-of-band rejection electrically coupled filter based on coupled line connection according to the present utility model;
FIG. 6 is a graph of S parameters of a second order quarter wave SIR high out-of-band rejection electrically coupled filter based on coupled line connection in accordance with the present utility model;
FIG. 7 is a schematic diagram of a third-order quarter-wavelength SIR high out-of-band rejection electrically coupled filter based on coupled line connection according to the present utility model;
fig. 8 is an S-parameter diagram of a third-order quarter-wavelength SIR high out-of-band rejection electrically coupled filter based on coupled line connection according to the present utility model.
Figure number: 1 is a resonator, 2 is a via hole, 3 is a coupling line, 4 is an input port, and 5 is an output port.
Detailed Description
The utility model is further described with reference to the drawings and detailed description which follow:
example 1
As shown in fig. 1, 3, 5 and 7, an N-order quarter-wavelength high-band out-of-band rejection filter structure comprises N resonators 1, wherein each resonator 1 comprises a top metal layer, a middle dielectric layer and a bottom metal layer, the top metal layer and the bottom metal layer are mutually parallel, a via hole 2 is correspondingly formed in the middle dielectric layer, the top metal layer and the bottom metal layer, the via hole 2 is vertically formed, the via hole 2 is a circular through hole, a metal coating is arranged on the inner ring surface of the via hole 2, and the metal coating is connected with the bottom metal layer to form a short-circuit end;
coupling lines 3 are arranged among the N resonators 1, the number of the coupling lines 3 is N-1, two adjacent resonators 1 are connected through the coupling lines 3, the coupling lines 3 are of rectangular structures, and the coupling lines 3 are used for introducing electric coupling paths of a main mode and inhibiting electric coupling paths of a parasitic passband;
n resonators 1 are connected in an array through N-1 coupling lines 3 to form an N-order filter, the input end of the first resonator 1 of the array is used as an input port 4 of the N-order filter, the output end of the Nth resonator 1 of the array is used as an output port 5 of the N-order filter, N is more than or equal to 2, and N is a positive integer.
Preferably, the input port 4 and the output port 5 of the N-order filter are formed by microstrip transmission lines, and are disposed on the top metal layer.
Example 2
Based on embodiment 1, a quarter-wavelength uniform-impedance high-out-of-band rejection electric coupling filter is designed in the embodiment, and comprises an N-order quarter-wavelength high-out-of-band rejection electric coupling filter structure, wherein the resonator 1 is of an N-type structure, and the via hole 2 is arranged close to the curve side.
Preferably, the coupling line 3 is disposed at a side far from the short-circuited end, and the distance between the coupling line 3 and the short-circuited end is about 2/3 times the length of the resonator 1.
In this embodiment, the quarter-wavelength uniform impedance high out-of-band rejection electrically coupled filters are second order band pass filters and third order band pass filters.
As shown in fig. 1 and 2, the second-order band-pass filter and the third-order band-pass filter of the present embodiment include three layers, namely, a top metal layer, an intermediate dielectric layer, and a bottom metal layer, wherein the top metal layer and the bottom metal layer are made of copper materials, the intermediate dielectric layer is made of Rogers 4350B materials, and the two resonators are symmetrically arranged. The resonators are connected by the coupling lines, the coupling lines are rectangular structures with narrower widths, and the main modes among the resonance units realize electric energy transmission through electric coupling. The bandwidth of the filter is adjustable by adjusting the position of the coupling line and the width of the resonator. In FIG. 1, L is the length of a quarter-wavelength uniform impedance microstrip line, W is the width of the quarter-wavelength uniform impedance microstrip line, r is the radius of the via, D is the length of the microstrip feed line, the distance between the coupling line and the via is about qL, where the parameter q is the normalized insertion coordinate (0.ltoreq.q.ltoreq.1), S is the length of the short coupling section, and its width is ws. The bandwidth of the filter is adjustable by adjusting the position, length and width of the coupling line. The width b of the microstrip feeder can be approximately obtained by the thickness, the dielectric constant and the resonance frequency of the dielectric substrate, and the 50-ohm impedance matching can be better performed by adjusting the parameter b. The electric coupling path of the main mode is introduced and the electric coupling path of the parasitic passband is restrained through the coupling line structure and the position of the coupling line is regulated, and the parasitic passband is restrained at 4 times of frequency, so that the performance of high out-of-band restraint is realized.
In this embodiment, the second-order quarter-wavelength uniform-impedance high-out-of-band rejection electrically coupled filter uses a single-layer Rogers 4350B dielectric substrate having a thickness h=0.508 mm, a relative dielectric constant=3.66, and a loss tangent tan δ=0.0031. As shown in fig. 2, the operating frequency is at 2.24GHz, the 3dB relative bandwidth is 39.7%, the in-band insertion loss of the filter is 0.38dB, the return loss in the passband is better than 26.4dB, the filter stop band is wider, and the spurious passband appears at 9.67 GHz.
The parasitic passband of the conventional second-order quarter-wavelength filter appears at the triple center frequency, and the parasitic passband is suppressed at the 4-frequency by adopting the filter with the structure of embodiment 1, so that the suppression characteristic of the filter Gao Daiwai can be realized by ensuring the electric coupling path of the main mode and simultaneously suppressing the electric coupling of the parasitic passband after adopting the structure of embodiment 1.
As shown in fig. 3, this embodiment further designs a third-order quarter-wavelength uniform-impedance high-out-of-band rejection electric coupling filter, which includes three uniform-impedance resonators, the first resonator and the third resonator have the same size, the second resonator has a wider width, the three resonators are symmetrical about the central axis, the resonators are connected by a coupling line, the coupling line has a rectangular structure with a narrower width, electric energy transmission is realized between the resonant units through electric coupling, and the parasitic passband is suppressed at the frequency multiplication position of 4. Parallel and symmetrical microstrip feeder lines are arranged on two sides of the filter.
In this embodiment, the third-order band-pass filter is formed by cascading a uniform impedance resonator to the second-order band-pass filter, and fig. 4 is an S-parameter diagram of the third-order band-pass filter. The center frequency of the third-order band-pass filter is 2.23GHz, the 3dB relative bandwidth is 35.0%, the in-band insertion loss of the filter is 0.51dB, the return loss in the passband is better than 21.8dB, the stop band of the third-order band-pass filter is wider, the parasitic passband appears at 9.74GHz, and the parasitic passband is restrained at 4 times of frequency by the proposed filter.
Example 3
A quarter-wavelength SIR high out-of-band rejection electrically coupled filter is designed in this embodiment based on embodiment 1, including the N-order quarter-wavelength high out-of-band rejection electrically coupled filter structure, the resonator 1 is provided with a high impedance line and a low impedance line, and an impedance ratio is provided between the high impedance line and the low impedance line.
Preferably, the resonator 1 has an inverted convex structure, and the via hole 2 is opened near a high-impedance line of the resonator 1.
Preferably, the coupling line 3 is disposed at a low impedance line position, and the distance between the coupling line 3 and the short-circuited end is about 1/2 times the length of the outer protruding end of the resonator 1.
The impedance ratio of the high-impedance line to the low-impedance line is regulated, so that the resonance frequency of the fundamental frequency of the resonance unit is 4 times different from the resonance frequency of the parasitic passband, then the electric coupling path of the main mode is introduced between the adjacent low-impedance microstrip lines of the resonator through regulating and controlling the position of the coupling line, and the parasitic passband is restrained at the 5-frequency multiplication position, thereby realizing the performance of high-out-of-band restraint, and parallel and symmetrical microstrip feeder lines are arranged at the two sides of the low-impedance microstrip line of the filter unit.
The quarter-wavelength SIR high out-of-band rejection electrically coupled filters in this embodiment are second order band pass filters and third order band pass filters. The second-order band-pass filter and the third-order band-pass filter comprise three layers, wherein a top metal layer, a middle dielectric layer and a bottom metal layer are made of copper materials, the middle dielectric layer is made of Rogers 4350B materials, as shown in fig. 5, the second-order band-pass filter specifically comprises two inverted convex resonators, the resonators are of symmetrical structures, low-impedance lines among the resonators are connected through coupling lines, the coupling lines are of rectangular structures with narrower widths, and electric energy transmission among the resonators is realized through electric coupling. In fig. 5, L1 is the length of the low impedance line, L2 is the length of the high impedance line, W1 is the width of the low impedance line, W2 is the width of the high impedance line, r is the radius of the metal via hole, and D is the width of the microstrip feed line. The distance between the coupling line and the metal through hole is about qL, the parameter q is normalized insertion coordinates (q is more than or equal to 0 and less than or equal to 1), the length of the short coupling section is S, and the width is ws. The bandwidth of the filter is adjustable by adjusting the position of the coupling line and the width of the low-impedance line of the resonator. The width b of the microstrip feeder can be approximately obtained by the thickness, the dielectric constant and the resonance frequency of the dielectric substrate, and the 50-ohm impedance matching can be better performed by adjusting the parameter b. The electric coupling path of the main mode is introduced and the electric coupling path of the parasitic passband is restrained by adding the coupling line structure and regulating and controlling the position of the coupling line, so that the parasitic passband is restrained at the 5-frequency multiplication position, and the high out-of-band restraint performance is realized. As an embodiment, the second-order bandpass filter uses a single-layer Rogers 4350B dielectric substrate having a thickness h=0.508 mm, a relative dielectric constant=3.66, and a loss tangent tan δ=0.0031. Fig. 6 is an S-parameter diagram of the second-order band-pass filter. The implementation index of the second-order band-pass filter is as follows: the operating frequency is at 2.12GHz, the 3dB relative bandwidth is 47.2%, the in-band insertion loss of the filter is 0.23dB, the return loss in the passband is better than 31.8dB, the filter has wider stopband, and the parasitic passband appears at 10.65 GHz.
The spurious pass band of a conventional quarter wave filter occurs at three times the center frequency and the proposed filter suppresses the spurious pass band at 5 times the frequency. It was confirmed that the suppression of the filter Gao Daiwai can be achieved by ensuring the electric coupling path of the main mode while suppressing the electric coupling of the parasitic passband after the configuration of embodiment 1 was adopted.
As shown in fig. 7, the third-order bandpass filter provided in the embodiment of the utility model specifically includes three SIR resonators, the first resonator and the third resonator have the same size, the width of the low-impedance line of the second resonator is wider (W3), the low-impedance lines of the three resonators are connected by a coupling line, the coupling line has a rectangular structure with a narrower width, and the electric energy transmission between the resonance units is realized by electric coupling. Parallel and symmetrical microstrip feeder lines are arranged on two sides of the filtering unit.
In this embodiment, the third-order band-pass filter is a SIR resonator cascaded on the basis of the second-order band-pass filter, where lengths of low-impedance lines and high-impedance lines of the first resonator and the third resonator are respectively represented by L1 and L2, widths are respectively represented by W1 and W2, lengths of low-impedance lines and high-impedance lines of the second resonator are respectively represented by L3 and L4, and widths are respectively represented by W3 and W4, and the implementation index of the third-order band-pass filter is as follows: the center frequency is 2.20GHz, the 3dB relative bandwidth is 46.8%, the in-band insertion loss of the filter is 0.40dB, the return loss in the passband is better than 18.3dB, the filter has wider stopband, the parasitic passband appears at 10.36GHz, and the parasitic passband is restrained at 5 times frequency.
Therefore, the quarter-wavelength SIR high out-of-band rejection electric coupling filter provided by the embodiment has the advantages of wide stop band and adjustable bandwidth, and the order of the filter is expanded in a cascading mode, so that the filter has a good application prospect in a wireless communication system.
The above-described embodiments are merely preferred embodiments of the present utility model and are not intended to limit the scope of the present utility model, so that all equivalent changes or modifications of the structure, characteristics and principles described in the claims should be included in the scope of the present utility model.
Claims (7)
1. The structure of the N-order quarter-wavelength high-band rejection filter is characterized by comprising N resonators (1), wherein each resonator (1) comprises a top metal layer, a middle dielectric layer and a bottom metal layer, the top metal layer and the bottom metal layer are mutually parallel, a via hole (2) is correspondingly formed in each of the middle dielectric layer, the top metal layer and the bottom metal layer, the via hole (2) is vertically formed, the via hole (2) is a circular through hole, a metal coating is arranged on the inner annular surface of the via hole (2), and the metal coating is connected with the bottom metal layer to form a short-circuited end;
the N resonators (1) are provided with coupling lines (3), the number of the coupling lines (3) is N-1, two adjacent resonators (1) are connected through the coupling lines (3), the coupling lines (3) are of rectangular structures, and the coupling lines (3) are used for introducing electric coupling paths of a main mode and inhibiting electric coupling paths of a parasitic passband;
n resonators (1) are connected through N-1 coupling lines (3) in an array to form an N-order filter, the input end of the first resonator (1) in the array is used as an input port (4) of the N-order filter, the output end of the Nth resonator (1) in the array is used as an output port (5) of the N-order filter, N is more than or equal to 2, and N is a positive integer.
2. An N-order quarter wave high out-of-band rejection filter structure according to claim 1, characterized in that the input port (4) and the output port (5) of the N-order filter are constituted by microstrip transmission lines and are arranged on the top metal layer.
3. The quarter-wavelength uniform-impedance high-out-of-band rejection electric coupling filter is characterized by comprising the N-order quarter-wavelength high-out-of-band rejection electric coupling filter structure as claimed in claim 1, wherein the resonator (1) is of an N-type structure, and the via (2) is arranged close to the curve side.
4. A quarter wave uniform impedance high out-of-band rejection electrically coupled filter according to claim 3, wherein the coupling line (3) is arranged on a side remote from the short-circuited end, the distance between the coupling line (3) and the short-circuited end being about 2/3 times the length of the resonator (1).
5. A quarter wavelength SIR high out-of-band rejection electrically coupled filter comprising the N-th order quarter wavelength high out-of-band rejection electrically coupled filter structure according to claim 1, said resonator (1) being provided with a high impedance line and a low impedance line, said high impedance line and low impedance line being provided with an impedance ratio therebetween.
6. A quarter wave SIR high out-of-band rejection electrically coupled filter as claimed in claim 5, characterized in that the resonator (1) is of inverted-convex structure, and the via (2) is open close to the high impedance line of the resonator (1).
7. A quarter wave SIR high out-of-band rejection electrically coupled filter as claimed in claim 6, characterized in that the coupling line (3) is arranged at a low impedance line location, the distance between the coupling line (3) and the short-circuited end being approximately 1/2 times the length of the outer protruding end of the resonator (1).
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