CN106887658A - Hybrid coupled wave filter based on double-deck SIW structures - Google Patents
Hybrid coupled wave filter based on double-deck SIW structures Download PDFInfo
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- CN106887658A CN106887658A CN201710111152.2A CN201710111152A CN106887658A CN 106887658 A CN106887658 A CN 106887658A CN 201710111152 A CN201710111152 A CN 201710111152A CN 106887658 A CN106887658 A CN 106887658A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
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Abstract
The invention discloses the hybrid coupled wave filter based on double-deck SIW structures, including ground floor circle SIW resonators and second layer circle SIW resonators, ground floor circle SIW resonators include wave filter upper surface, first medium substrate and public metal covering；Second layer circle SIW resonators include wave filter lower surface, second medium substrate and public metal covering；Public metal covering is loaded with two circular holes, and ground floor circle SIW resonators and second layer circle SIW resonators are combined closely by the public metal covering；Circular array of metallization via is respectively provided with first medium substrate and second medium substrate, the first circular resonant cavity and the second circular resonant cavity are realized successively；Wave filter upper surface turns coplanar wave guide feedback structure including the first microstrip line；Wave filter lower surface turns coplanar wave guide feedback structure including the second microstrip line.The present invention is the rectilinear topology wave filter of vertical stratification, with flexibly controllable transmission zero, can play the effect for improving selectivity, and the characteristics of with compact conformation.
Description
Technical field
The present invention relates to microwave filter, and in particular to the hybrid coupled wave filter based on double-deck SIW structures, belong to wireless
Communication technical field.
Background technology
With the development of hyundai electronicses science and technology, available frequency spectrum resource growing tension, particularly radio frequency and microwave low frequency
Section it may be said that arrived awkward stage, in order to improve message capacity and avoid adjacent channel between interference, to filtering
The requirement more and more higher of device frequency selective characteristic.This requires that wave filter must have precipitous Out-of-band rejection, while in order to full
The demand of sufficient Modern Communication System miniaturization, the size of wave filter is also aobvious particularly important.
The content of the invention
In order to solve above-mentioned problem, the invention discloses a kind of hybrid coupled filtering based on double-deck SIW structures
Device, the wave filter realizes the hybrid electromagnetic coupling of vertical direction, the size of horizontal direction is reduced, with controllable transmission zero
Point, realizes good frequency selectivity, realizes the advantage of miniaturization, and its concrete technical scheme is as follows：
Based on the hybrid coupled wave filter of double-deck SIW structures, including ground floor circle SIW resonators and second layer circle SIW it is humorous
Shake device, and the ground floor circle SIW resonators include wave filter upper surface, first medium substrate and public metal covering；The second layer
Circular SIW resonators include wave filter lower surface, second medium substrate and public metal covering；Ground floor circle SIW resonators and
Second layer circle SIW resonators share same public metal covering, and the public metal covering is loaded with two circular holes, respectively first
Circular hole and the second circular hole, ground floor circle SIW resonators and second layer circle SIW resonators are closely tied by the public metal covering
Close；
Circular array of metallization via is set in the first medium substrate, and the metallization via of the circular arrangement realizes the
Circular array of metallization via, the metallization of the circular arrangement are set in one circular resonant cavity, the second medium substrate
Via realizes the second circular resonant cavity；
The metallization via of corresponding circular arrangement covers copper face around corresponding circle is constituted；
The wave filter upper surface turns coplanar wave guide feedback structure including the first microstrip line：First microstrip line is the first feeder line, should
Co-planar waveguide opened on copper face first line of rabbet joint and second line of rabbet joint is formed by being covered in circle, and first feeder line is located at first line of rabbet joint and the
In the middle of two line of rabbet joint；The wave filter lower surface turns coplanar wave guide feedback structure including the second microstrip line：Second microstrip line is second
Feeder line；The co-planar waveguide opened on copper face third slot line and the 4th line of rabbet joint is formed by being covered in circle, and second feeder line is located at the 3rd
In the middle of the line of rabbet joint and the 4th line of rabbet joint；Copper face is covered with circle of the wave filter lower surface on public metal covering in the wave filter upper surface
The center of circle is centrosymmetric；
The wave filter upper surface and wave filter lower surface surrounding are respectively provided with four non-metallic vias.
The edge of the wave filter upper surface is provided with output port, and the output port is located at the center of the first feeder line, institute
The edge for stating wave filter lower surface is provided with input port, and the input port is located at the center of the second feeder line, the output port
With one group of opposite side that input port is located at public metal covering.
The edge of the wave filter upper surface is provided with input port, and the input port is located at the center of the first feeder line, institute
The edge for stating wave filter lower surface is provided with output port, and the output port is located at the center of the second feeder line, the output port
With one group of opposite side that input port is located at public metal covering.
Trigonometric coordinates system is set up for the origin of coordinates in the center for selecting public metal covering, by ground floor circle SIW resonators with
Second layer circle SIW resonator horizontal positioneds, vertical direction is the center of circle of Z-direction, the center of circle of the first circular hole and the second circular hole
Place straight line is Y direction, and X-direction determines, first line of rabbet joint and second line of rabbet joint are symmetrical on Y-axis, the third slot line
It is symmetrical on Y-axis with the 4th line of rabbet joint；First line of rabbet joint, second line of rabbet joint, third slot line are identical with the 4th slot line structure, upper resonator and
Lower resonator is on origin of coordinates Central Symmetry.
The radius of the upper resonator and lower resonator is 10.8mm, and the radius of the first circular hole and the second circular hole is
2.35mm, the distance of the first circular hole and the second circular hole away from the origin of coordinates is 4.4mm；Ground floor circle SIW resonators and second
Layer circle SIW resonators are symmetrical on y-axis.
First line of rabbet joint and second line of rabbet joint are the L-type line of rabbet joint that rightabout is set, and first line of rabbet joint and second line of rabbet joint are on Y
Axial symmetry, first line of rabbet joint is 3mm, length of first line of rabbet joint parallel to the line of rabbet joint in X-direction parallel to the length of the line of rabbet joint of Y-axis
It is 3.2mm, the slit width 0.15m of first line of rabbet joint.
A diameter of 0.15mm of the metallization via.
First feeder line and two feeder line characteristic impedances are 50 ohm.
Operation principle of the invention is：
While there is the situation of field coupling and magnetic coupling, magnetic coupling coefficient and thermocouple between hybrid coupled refers to adjacent resonators
The ratio between syzygy number determines the position of transmission zero, and electric coupling coefficient and magnetic coupling coefficient are closer to then transmission zero in
Frequency of heart.And because the size of total coefficient of coup is the difference of magnetic coupling coefficient and electric coupling coefficient, electric coupling coefficient and magnetic coupling
Coefficient is smaller closer to then total coefficient of coup, so that the bandwidth of wave filter also very little.
The beneficial effects of the invention are as follows：
The present invention, symmetrical by loading two on the public metal covering between the first circular resonant cavity and the second circular resonant cavity
Circular hole, without additional volumes are increased, the circular hole by loading between the first circular resonant cavity and the second circular resonant cavity introduces mixed
Closing electromagnetic coupled makes vertical line topology wave filter produce transmission zero, and adjusts the distance in the circular hole deviation center of circle so as to control to pass
The position of defeated zero point, improves the selectivity of wave filter, and total is compact.
The present invention is the rectilinear topology wave filter of vertical stratification, with flexibly controllable transmission zero, can play raising choosing
The effect of selecting property, and the characteristics of with compact conformation, it is to avoid introduce electromagnetic radiation and undesire frequency.
Brief description of the drawings
Fig. 1 is orthogonal decomposition figure of the invention,
Fig. 2 is the side schematic view of used printed circuit board (PCB) of the invention,
Fig. 3 is the surface structure schematic diagram of ground floor circle SIW resonators of the invention,
Fig. 4 is the public metal covering structural representation of ground floor circle SIW resonators of the invention,
Reference title is as follows：
A1：First line of rabbet joint；A2：Second line of rabbet joint；A3：Third slot line A4：4th line of rabbet joint；
B1：First feeder line；B2：Second feeder line；
C1：First circular hole；C2：Second circular hole；
S1：Medium substrate；S2：Upper metal level；S3：Lower metal layer；
Port1：Input port；Port2：Output port；
L1：Wave filter upper surface；L2：Wave filter lower surface；L3：Public metal covering；
Q：Metallization via；
O：The origin of coordinates.
Specific embodiment
With reference to the accompanying drawings and detailed description, the present invention is furture elucidated.It should be understood that following specific embodiments are only
For illustrating the present invention rather than limitation the scope of the present invention.
It is 3.38 that the present invention uses relative dielectric constant, and thickness is the sheet materials of Rogers 4003 of 0.813mm as medium base
Plate, it would however also be possible to employ the microwave board of other specifications is used as substrate.As shown in Fig. 2 the upper and lower table of the dielectric substrate S1 in microwave board
Face has been respectively coated by metal level S2 and lower metal layer S3.Wave filter is made up of two blocks of plates of Rogers 4003, first piece of microwave board
Lower surface be brought into close contact with the upper surface of second piece of microwave board, and alignd by non-metallic via, it is fixed.
Fig. 1 is structural representation of the invention, visible with reference to accompanying drawing, and this hybrid coupled based on bilayer SIW structures is filtered
Device, including ground floor circle SIW resonators and second layer circle SIW resonators, the ground floor circle SIW resonators include filter
Ripple device upper surface L1, first medium substrate and public metal covering L3；（First medium substrate is the dielectric substrate of a blocking filter
S1, wave filter upper surface L1 are the upper metal level S2 described in Fig. 2, and public metal covering L3 is the lower metal layer described in Fig. 2
S3）.Second layer circle SIW resonators include wave filter lower surface L2, second medium substrate and public metal covering L3；（Second is situated between
Matter substrate is the dielectric substrate S1 of another blocking filter, and wave filter lower surface L2 is the lower metal layer S3 described in Fig. 2, public gold
Category face L3 is the upper metal level S2 described in Fig. 2）.Ground floor circle SIW resonators and second layer circle SIW resonators share same
One public metal covering L3, ground floor circle SIW resonators and second layer circle SIW resonators are tight by the public metal covering L3
With reference to；Ground floor circle SIW resonators and second layer circle SIW resonator dimensions are equal, determine the frequency of wave filter；By micro-
Band line turns coplanar wave guide feedback structure, makes feed end be easy to match and integrated.The public metal covering L3 is loaded with two circular holes,
Respectively the first circular hole and the second circular hole, design two circular holes purpose be in order to improve the stiffness of coupling between two resonators,
Improve matching, it is to avoid when zero point is near passband, the bandwidth of wave filter is narrow.Increase a circular hole and have little influence on transmission zero
Position, but significantly improve return loss and increased the bandwidth of wave filter, because increasing a circular hole will not change electricity
The ratio of stiffness of coupling and coupling strength, but total coefficient of coup can be increased.First circular hole and the second circular hole can be humorous up and down
Shake to introduce simultaneously between chamber and be electrically coupled and magnetic coupling, by adjusting the distance of circular hole and the coordinate center of circle, make ground floor humorous with the second layer
Shaking hybrid electromagnetic coupling of formed between device；Electric-field intensity is stronger during due to closer to the coordinate center of circle, and copper face side is covered closer to circle
Magnetic field intensity is stronger during edge, and piezoelectric coupling strength in hybrid coupled can be controlled by adjusting the distance in the circular hole deviation coordinate center of circle
With the ratio of coupling strength, so as to obtain a controllable transmission zero in position.
When circular hole is moved to away from center of circle direction, magnetic-coupled ratio is improved in hybrid coupled, and transmission zero is to low frequency side
To movement, until transmission zero appears in passband left side；Conversely, when circular hole is moved near center of circle direction, electricity in hybrid coupled
The ratio of coupling is improved, and transmission zero is moved to high frequency direction, until transmission zero appears in passband right side.
The center of circle of the first circular hole and the second circular hole is located at when on straight line where y-axis, and the hybrid coupled effect that circular hole is introduced is most
It is preferable.This is the symmetry that field distribution in resonator is destroyed due to the coplanar waveguide structure for feeding so that circular hole is located at y-axis side
Xiang Shi, the distribution of field is more conformed to the need for circular hole realizes hybrid coupled.
Circular array of metallization via Q, the metallization via Q of the circular arrangement are set in the first medium substrate
Realize setting circular array of metallization via Q in the first circular resonant cavity, the second medium substrate, the circular arrangement
Metallization via Q realizes the second circular resonant cavity；
The metallization via Q of corresponding circular arrangement covers copper face around corresponding circle is constituted；
The wave filter upper surface L1 turns coplanar wave guide feedback structure including the first microstrip line：First microstrip line is the first feeder line,
The co-planar waveguide opened on copper face first line of rabbet joint and second line of rabbet joint is formed by being covered in circle, first feeder line be located at first line of rabbet joint and
In the middle of second line of rabbet joint；The wave filter lower surface L2 turns coplanar wave guide feedback structure including the second microstrip line：Second microstrip line is
Second feeder line；The co-planar waveguide opened on copper face third slot line and the 4th line of rabbet joint is formed by being covered in circle, and second feeder line is located at
In the middle of third slot line and the 4th line of rabbet joint；The wave filter upper surface L1 and circles of the wave filter lower surface L2 on public metal covering L3
The center of circle that shape covers copper face is centrosymmetric；
The wave filter upper surface L1 and wave filter lower surface L2 surroundings are respectively provided with four non-metallic via Q.During installation, due to
Wave filter upper and lower two-layer altogether, in order to two layer medium substrate is fixed together, first accomplishes fluently via at four angles, then solid with screw
It is fixed.Because two ports of wave filter are located at upper and lower two-layer substrate respectively, for the ease of welding SMA heads, feeder line is eliminated intentionally
Neighbouring certain media substrate, and in another piece of corresponding region copper facing of medium substrate, that is to say, that shared metal is distinguished
It is plated on two pieces of substrates, can be fully contacted for the metal copper facing ensured on two substrates, it is necessary to by each piece of big face of substrate
Product covers copper.
The edge of the wave filter upper surface L1 is provided with output port, and the output port is located at the center of the first feeder line,
The edge of the wave filter lower surface L2 is provided with input port, and the input port is located at the center of the second feeder line, the output
Port and input port are located at one group of opposite side of public metal covering L3.
Or the edge of the wave filter upper surface L1 is provided with input port, the input port is located in the first feeder line
The heart, the edge of the wave filter lower surface L2 is provided with output port, and the output port is located at the center of the second feeder line, described defeated
Exit port and input port are located at one group of opposite side of public metal covering L3.
The input port and output port of microwave filter of the present invention are welded using SMA, to access test
Or be connected with circuit.
The center of public metal covering L3 is selected for origin of coordinates O sets up trigonometric coordinates system, by ground floor circle SIW resonators
With second layer circle SIW resonator horizontal positioneds, vertical direction is the circle of Z-direction, the center of circle of the first circular hole and the second circular hole
Straight line where the heart is Y direction, and X-direction determines, first line of rabbet joint and second line of rabbet joint are symmetrical on Y-axis, the 3rd groove
Line and the 4th line of rabbet joint are symmetrical on Y-axis；First line of rabbet joint, second line of rabbet joint, third slot line are identical with the 4th slot line structure, upper resonator
With lower resonator on origin of coordinates O Central Symmetries.
The radius of the upper resonator and lower resonator is 10.8mm, and the radius of the first circular hole and the second circular hole is
2.35mm, the distance of the first circular hole and the second circular hole away from origin of coordinates O is 4.4mm；Ground floor circle SIW resonators and second
Layer circle SIW resonators are symmetrical on Y-axis.
Fig. 3 is the surface structure schematic diagram of ground floor circle SIW resonators of the invention, and Fig. 4 is of the invention first
The public metal covering L3 structural representations of layer circle SIW resonators, visible with reference to accompanying drawing, first line of rabbet joint and second line of rabbet joint are
The L-type line of rabbet joint that rightabout is set, first line of rabbet joint and second line of rabbet joint are symmetrical on Y-axis, and first line of rabbet joint is parallel to the line of rabbet joint of Y-axis
Length is 3mm, and first line of rabbet joint is 3.2mm, the slit width 0.15m of first line of rabbet joint parallel to the length of the line of rabbet joint in X-direction.
A diameter of 0.15mm of the metallization via Q.
First feeder line and two feeder line characteristic impedances are 50 ohm.
The scattering parameter emulation of wave filter of the present invention and measured result：The centre frequency of the wave filter is 5.8GHz, its
3dB relative bandwidths are 3.8%, and emulation and measured result coincide substantially as we can see from the figure, wherein the insertion loss of measurement error
The radiation loss that mismachining tolerance and slotted line are derived from test process slightly bigger than normal.
Technological means disclosed in the present invention program is not limited only to the technological means disclosed in above-mentioned technological means, also includes
Constituted technical scheme is combined by above technical characteristic.
With above-mentioned according to desirable embodiment of the invention as enlightenment, by above-mentioned description, relevant staff is complete
Various changes and amendments can be carried out without departing from the scope of the technological thought of the present invention' entirely.The technology of this invention
Property scope is not limited to the content on specification, it is necessary to its technical scope is determined according to right.
Claims (8)
1. the hybrid coupled wave filter of bilayer SIW structures is based on, it is characterised in that including ground floor circle SIW resonators and second
Layer circle SIW resonators, the ground floor circle SIW resonators include wave filter upper surface, first medium substrate and public gold
Category face；Second layer circle SIW resonators include wave filter lower surface, second medium substrate and public metal covering；Ground floor is circular
SIW resonators and second layer circle SIW resonators share same public metal covering, and the public metal covering is loaded with two circles
Hole, respectively the first circular hole and the second circular hole, ground floor circle SIW resonators and second layer circle SIW resonators are by the public affairs
Combined closely with metal covering；
Circular array of metallization via is set in the first medium substrate, and the metallization via of the circular arrangement realizes the
Circular array of metallization via, the metallization of the circular arrangement are set in one circular resonant cavity, the second medium substrate
Via realizes the second circular resonant cavity；
The metallization via of corresponding circular arrangement covers copper face around corresponding circle is constituted；
The wave filter upper surface turns coplanar wave guide feedback structure including the first microstrip line：First microstrip line is the first feeder line, should
Co-planar waveguide opened on copper face first line of rabbet joint and second line of rabbet joint is formed by being covered in circle, and first feeder line is located at first line of rabbet joint and the
In the middle of two line of rabbet joint；The wave filter lower surface turns coplanar wave guide feedback structure including the second microstrip line：Second microstrip line is second
Feeder line；The co-planar waveguide opened on copper face third slot line and the 4th line of rabbet joint is formed by being covered in circle, and second feeder line is located at the 3rd
In the middle of the line of rabbet joint and the 4th line of rabbet joint；Copper face is covered with circle of the wave filter lower surface on public metal covering in the wave filter upper surface
The center of circle is centrosymmetric；
The wave filter upper surface and wave filter lower surface surrounding are respectively provided with four non-metallic vias.
2. the hybrid coupled wave filter based on double-deck SIW structures according to claim 1, it is characterised in that the wave filter
The edge of upper surface is provided with output port, and the output port is located at the center of the first feeder line, the side of the wave filter lower surface
Edge is provided with input port, and the input port is located at the center of the second feeder line, and the output port and input port are located at public
One group of opposite side of metal covering.
3. the hybrid coupled wave filter based on double-deck SIW structures according to claim 1, it is characterised in that the wave filter
The edge of upper surface is provided with input port, and the input port is located at the center of the first feeder line, the side of the wave filter lower surface
Edge is provided with output port, and the output port is located at the center of the second feeder line, and the output port and input port are located at public
One group of opposite side of metal covering.
4. the hybrid coupled wave filter based on double-deck SIW structures according to Claims 2 or 3, it is characterised in that selected public affairs
It is that the origin of coordinates sets up trigonometric coordinates system with the center of metal covering, ground floor circle SIW resonators and second layer circle SIW is humorous
Shake device horizontal positioned, vertical direction is Z-direction, straight line where the center of circle of the center of circle of the first circular hole and the second circular hole is Y-axis side
To X-direction determines, first line of rabbet joint and second line of rabbet joint are symmetrical on Y-axis, and the third slot line and the 4th line of rabbet joint are on Y
Axial symmetry；First line of rabbet joint, second line of rabbet joint, third slot line are identical with the 4th slot line structure, and upper resonator and lower resonator are on sitting
Mark origin Central Symmetry.
5. the hybrid coupled wave filter based on double-deck SIW structures according to claim 4, it is characterised in that the upper resonance
The radius of chamber and lower resonator is 10.8mm, and the radius of the first circular hole and the second circular hole is 2.35mm, the first circular hole and
Distance of two circular holes away from the origin of coordinates is 4.4mm；Ground floor circle SIW resonators and second layer circle SIW resonators are closed
It is symmetrical in y-axis.
6. the hybrid coupled wave filter based on double-deck SIW structures according to claim 5, it is characterised in that first groove
Line and second line of rabbet joint are the L-type line of rabbet joint that rightabout is set, and first line of rabbet joint and second line of rabbet joint are symmetrical on Y-axis, and first line of rabbet joint is put down
Row is 3mm in the length of the line of rabbet joint of Y-axis, and first line of rabbet joint is 3.2mm, first line of rabbet joint parallel to the length of the line of rabbet joint in X-direction
Slit width 0.15m.
7. the hybrid coupled wave filter based on double-deck SIW structures according to claim 6, it is characterised in that the metallization
A diameter of 0.15mm of via.
8. the hybrid coupled wave filter based on double-deck SIW structures according to claim 7, it is characterised in that first feedback
Line and two feeder line characteristic impedances are 50 ohm.
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| CN109904571A (en) * | 2019-02-25 | 2019-06-18 | 江南大学 | Substrate integral wave guide filter based on electromagnetism hybrid coupled |
| CN110364793A (en) * | 2019-06-13 | 2019-10-22 | 中国人民解放军国防科技大学 | Hybrid SIW and SLSP structure broadband cavity filter |
| CN111342179A (en) * | 2020-04-14 | 2020-06-26 | 南京航空航天大学 | 2.5D miniaturized electromagnetic band gap structure for microwave circuit module package |
| CN111755784A (en) * | 2020-07-02 | 2020-10-09 | 电子科技大学 | Hybrid electromagnetic coupling compact SIW filter based on evanescent mode loading |
| CN111755781A (en) * | 2020-07-02 | 2020-10-09 | 电子科技大学 | LTCC process-based three-order hybrid electromagnetic coupling SIW filter |
| CN112086722A (en) * | 2020-09-07 | 2020-12-15 | 郑州宇林电子科技有限公司 | Design method of miniaturized band-pass filter with high selectivity and wide stop band |
| CN112886160A (en) * | 2021-01-14 | 2021-06-01 | 中国电子科技集团公司第五十五研究所 | Compact substrate integrated waveguide filter based on silicon-based MEMS (micro-electromechanical systems) process |
| CN113328223A (en) * | 2021-06-29 | 2021-08-31 | 展讯通信（上海）有限公司 | Third-order band-pass filter |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109904571A (en) * | 2019-02-25 | 2019-06-18 | 江南大学 | Substrate integral wave guide filter based on electromagnetism hybrid coupled |
| CN109904571B (en) * | 2019-02-25 | 2020-06-05 | 江南大学 | Substrate integrated waveguide filter based on electromagnetic hybrid coupling |
| CN110364793A (en) * | 2019-06-13 | 2019-10-22 | 中国人民解放军国防科技大学 | Hybrid SIW and SLSP structure broadband cavity filter |
| CN111342179A (en) * | 2020-04-14 | 2020-06-26 | 南京航空航天大学 | 2.5D miniaturized electromagnetic band gap structure for microwave circuit module package |
| CN111755784A (en) * | 2020-07-02 | 2020-10-09 | 电子科技大学 | Hybrid electromagnetic coupling compact SIW filter based on evanescent mode loading |
| CN111755781A (en) * | 2020-07-02 | 2020-10-09 | 电子科技大学 | LTCC process-based three-order hybrid electromagnetic coupling SIW filter |
| CN111755784B (en) * | 2020-07-02 | 2021-12-31 | 电子科技大学 | Hybrid electromagnetic coupling compact SIW filter based on evanescent mode loading |
| CN112086722A (en) * | 2020-09-07 | 2020-12-15 | 郑州宇林电子科技有限公司 | Design method of miniaturized band-pass filter with high selectivity and wide stop band |
| CN112086722B (en) * | 2020-09-07 | 2022-03-01 | 郑州宇林电子科技有限公司 | Design method of miniaturized band-pass filter with high selectivity and wide stop band |
| CN112886160A (en) * | 2021-01-14 | 2021-06-01 | 中国电子科技集团公司第五十五研究所 | Compact substrate integrated waveguide filter based on silicon-based MEMS (micro-electromechanical systems) process |
| CN112886160B (en) * | 2021-01-14 | 2021-11-30 | 中国电子科技集团公司第五十五研究所 | Compact substrate integrated waveguide filter based on silicon-based MEMS (micro-electromechanical systems) process |
| CN113328223A (en) * | 2021-06-29 | 2021-08-31 | 展讯通信（上海）有限公司 | Third-order band-pass filter |
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Application publication date: 20170623 |