CN111755784A - Hybrid electromagnetic coupling compact SIW filter based on evanescent mode loading - Google Patents
Hybrid electromagnetic coupling compact SIW filter based on evanescent mode loading Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
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Abstract
The invention discloses a hybrid electromagnetic coupling compact SIW filter based on evanescent mode loading, which comprises three layers of substrate integrated waveguide cavities which are arranged in a stacked mode, wherein a metal column is arranged at the center of each layer of the substrate integrated waveguide cavity, metal layers are stacked above and below each layer of the substrate integrated waveguide cavity, feeder lines in a coplanar waveguide mode are arranged on the metal layers at the uppermost layer and the lowermost layer and used as input or output, and the feeder lines in the two coplanar waveguide modes are arranged in a horizontal direction in a relative mode; the band-pass filter can well solve the problems that the traditional filter technology is compact in design size and has high selectivity, and the band-pass filter cannot completely meet the technical development requirements, and has the characteristics of low in-band loss, high sideband suppression and small size.
Description
Technical Field
The invention relates to the technical field of miniaturized band-pass filters, in particular to a hybrid electromagnetic coupling compact SIW filter based on evanescent mode loading.
Background
With the development of modern society informatization, wireless communication technology is widely applied to various industries of society, and new communication standards and standards emerge endlessly. The application in multiple fields and the increasingly tense spectrum resources also promote the continuous innovation of wireless communication technology, and radio frequency communication systems are continuously developing towards miniaturization, high performance and the like. The size reduction and high selectivity of the filter, which is a key device in the radio frequency communication system, have been the research hotspots of the modern radio frequency communication system.
At present, the realization of a filter mainly uses a plane microstrip as a main part and has the defects of large insertion loss and insufficient power capacity. The Substrate Integrated Waveguide (SIW) inherits the advantages of microstrip lines and metal waveguides, has the characteristics of low loss, high quality factor, high power capacity, light weight, easy processing, convenient integration and the like, and can improve and improve the defects of microstrip type structures. Since the performance of the SIW is limited by the cut-off frequency, the size occupied by the SIW cavity is always large, and the conventional SIW structure is not favorable for the miniaturization design of the filter. To effectively reduce the size of the filter, a loaded evanescent mode technique is introduced into the design of a hybrid electromagnetically coupled SIW filter, making the SIW filter more compact and keeping the resonators with a relatively high quality factor. The introduction of cross coupling between resonators is currently the most common method for introducing limited transmission zeros in the frequency spectrum to improve the selectivity of the band-pass filter, however, the introduction of cross coupling has high requirements on the number and topology of resonators, and the number of generated transmission zeros is limited.
Therefore, the design of a bandpass filter with compact size and high selectivity by using conventional filter technology has not been able to fully meet the requirement of technical development, and a hybrid electromagnetic coupling compact SIW filter based on evanescent mode loading is needed to solve the above problems.
Disclosure of Invention
The invention aims to design a hybrid electromagnetic coupling compact SIW filter based on evanescent mode loading, can well solve the problem that a band-pass filter with compact size and high selectivity designed by the traditional filter technology cannot completely meet the technical development requirement, and has the characteristics of small in-band loss, high sideband suppression and small size.
The invention is realized by the following technical scheme: a hybrid electromagnetic coupling compact SIW filter based on evanescent mode loading comprises three layers of substrate integrated waveguide cavities which are arranged in a stacked mode, metal columns are arranged in the center of each layer of the substrate integrated waveguide cavities, metal layers are stacked above and below each layer of the substrate integrated waveguide cavities, feeder lines in a coplanar waveguide mode are arranged on the metal layers on the uppermost layer and the lowermost layer and used as input or output, and the feeder lines in the two coplanar waveguide modes are arranged in a horizontal direction in a relative mode.
In order to further realize the invention, the following arrangement mode is adopted: the height of the metal pillar on each layer is slightly less than (almost equal to) the thickness of the substrate integrated waveguide cavity of the layer.
In order to further realize the invention, the following arrangement mode is adopted: the width of the single-layer substrate integrated waveguide cavity is 6mm, the length of the single-layer substrate integrated waveguide cavity is 7.3mm, the thickness of the single-layer substrate integrated waveguide cavity is 0.4mm, the diameter of the metal column is 0.4mm, and the height of the metal column is 0.36 mm.
In order to further realize the invention, the following arrangement mode is adopted: the substrate integrated waveguide cavity is formed by enclosing edge metal columns which are vertically arranged on the edge of a substrate where the substrate integrated waveguide cavity is located.
In order to further realize the invention, the following arrangement mode is adopted: two trapezoidal coupling windows which are symmetrically arranged at the center of the cavity by taking a central line as a symmetry axis are arranged on the metal layer between the uppermost substrate integrated waveguide cavity and the middle substrate integrated waveguide cavity; two trapezoidal coupling windows which are symmetrically arranged at the center of the cavity by taking the central line as a symmetry axis are also arranged on the metal layer between the lowest substrate integrated waveguide cavity and the middle substrate integrated waveguide cavity.
In order to further realize the invention, the following arrangement mode is adopted: the symmetry axes of the trapezoidal coupling windows on the two metal layers are crossed in spatial position.
In order to further realize the invention, the following arrangement mode is adopted: the sizes of two trapezoidal coupling windows on the metal layer between the uppermost substrate integrated waveguide cavity and the middle substrate integrated waveguide cavity are as follows: the upper bottom is 0.5mm, the lower bottom is 1.1mm, the height is 0.4mm, and the sizes of two trapezoidal coupling windows on the metal layer between the substrate integrated waveguide cavity at the lowest part and the substrate integrated waveguide cavity in the middle are as follows: the upper bottom is 0.5mm, the lower bottom is 0.8mm and the height is 1.3 mm.
In order to further realize the invention, the following arrangement mode is adopted: two trapezoidal coupling windows on any metal layer are symmetrically arranged through the bottom edge.
In order to further realize the invention, the following arrangement mode is adopted: the substrate material of the substrate integrated waveguide cavity adopts ULF-140 ceramic material with the relative dielectric constant of 13.3.
Compared with the prior art, the invention has the following advantages and beneficial effects:
according to the invention, the coupling window is etched on the metal layer between the two SIW resonant cavities (substrate integrated waveguide cavities) which are vertically coupled with each other, so that the interaction of electric field energy and magnetic field energy exists at the same time, thereby realizing hybrid electromagnetic coupling, and simultaneously introducing transmission zero points at two sides of a passband, thereby realizing high selectivity of the filter.
According to the invention, the capacitor column (metal column) is loaded in the center of the SIW cavity (substrate integrated waveguide cavity) to form a evanescent mode, so that the resonant frequency of the cavity is effectively reduced, the relative size of the structure is reduced, the filter is more compact, the resonator can be kept to have a relatively high quality factor, and the miniaturization design is facilitated.
Drawings
Fig. 1 is a schematic diagram of a layered structure of a hybrid electromagnetically coupled compact SIW filter based on evanescent mode loading.
Fig. 2 is a schematic diagram of the overall structure of a hybrid electromagnetically coupled compact SIW filter based on evanescent mode loading.
Fig. 3 is a schematic diagram of a metal layer between an uppermost substrate integrated waveguide cavity and a middle substrate integrated waveguide cavity in the present invention, which has two trapezoidal coupling windows respectively located at the left and right sides of symmetry.
Fig. 4 is a schematic diagram of a metal layer between a middle substrate integrated waveguide cavity and a lowest substrate integrated waveguide cavity in the present invention, which has two trapezoidal coupling windows respectively located at the front and rear sides of symmetry.
FIG. 5 is a S parameter graph of the present invention.
The method comprises the following steps of 1, integrating a waveguide cavity on a substrate; 2. a metal post; 3. a metal layer between the uppermost cavity and the middle cavity; 4. a metal layer between the middle cavity and the lowest cavity; 5. an uppermost metal layer; 6. a lowermost metal layer; 7. inputting a coplanar waveguide; 8. and outputting the coplanar waveguide.
Detailed Description
The present invention will be described in further detail with reference to examples, but the embodiments of the present invention are not limited thereto.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings of the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention.
In the description of the present invention, it is to be understood that the terms etc. indicate orientations or positional relationships based on those shown in the drawings only for the convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
It is worth noting that: in the present application, when it is necessary to apply the known technology or the conventional technology in the field, the applicant may have the case that the known technology or/and the conventional technology is not specifically described in the text, but the technical means is not specifically disclosed in the text, and the present application is considered to be not in compliance with the twenty-sixth clause of the patent law.
The noun explains:
and (6) SIW: the acronym of Substrate integrated waveguide is Substrate integrated waveguide.
Example 1:
the hybrid electromagnetic coupling compact SIW filter based on evanescent mode loading can well solve the problem that a band-pass filter with compact size and high selectivity designed by the traditional filter technology can not completely meet the technical development requirement, has the characteristics of small in-band loss, high side band inhibition and small size, and particularly adopts the following arrangement mode as shown in figures 1, 2, 3 and 4: comprises three layers of substrate integrated waveguide cavities 1 which are arranged in a stacked manner, a metal column 2 is arranged at the central position of each layer of substrate integrated waveguide cavity, metal layers (a metal layer 3 between the uppermost cavity and the middle cavity, a metal layer 4 between the middle cavity and the lowermost cavity, an uppermost metal layer 5 and a lowermost metal layer 6) are stacked above and below each layer of the substrate integrated waveguide cavity, feeder lines (an input coplanar waveguide 7 and an output coplanar waveguide 8) in a coplanar waveguide form are arranged on the uppermost metal layer and the lowermost metal layer (the uppermost metal layer 5 and the lowermost metal layer 6) and are used as input or output, and the two feeder lines in the coplanar waveguide form are arranged oppositely in the horizontal direction (namely the input coplanar waveguide 7 is arranged at the left end, the corresponding output coplanar waveguide 8 is arranged at the right end, and the input coplanar waveguide 7 is arranged at the right end, and the corresponding output coplanar waveguide 8 is arranged at the left end).
Example 2:
the present embodiment is further optimized based on the above embodiment, and the same parts as those in the foregoing technical solutions will not be described herein again, as shown in fig. 1, 2, 3, and 4, in order to further better implement the present invention, the following setting manner is particularly adopted: the height of the metal column 2 on each layer is slightly less than (almost equal to) the thickness of the substrate integrated waveguide cavity of the layer; preferably, the width of the single-layer substrate integrated waveguide cavity is 6mm, the length of the single-layer substrate integrated waveguide cavity is 7.3mm, the thickness of the single-layer substrate integrated waveguide cavity is 0.4mm, the diameter of the metal pillar is 0.4mm, and the height of the metal pillar is 0.36 mm.
Example 3:
the present embodiment is further optimized based on any of the above embodiments, and the same parts as those in the foregoing technical solutions will not be described herein again, as shown in fig. 1, 2, 3, and 4, in order to further better implement the present invention, the following setting modes are particularly adopted: the substrate integrated waveguide cavity is formed by enclosing edge metal columns which are vertically arranged on the edge of a substrate where the substrate integrated waveguide cavity is located.
Example 4:
the present embodiment is further optimized based on any of the above embodiments, and the same parts as those in the foregoing technical solutions will not be described herein again, as shown in fig. 1, 2, 3, and 4, in order to further better implement the present invention, the following setting modes are particularly adopted: two trapezoidal coupling windows which are symmetrically arranged at the center of the cavity by taking the central line as a symmetrical axis are arranged on the metal layer between the uppermost substrate integrated waveguide cavity and the middle substrate integrated waveguide cavity (the metal layer 3 between the uppermost cavity and the middle cavity); two trapezoidal coupling windows which are symmetrically arranged at the center of the cavity by taking the central line as a symmetry axis are also arranged on the metal layer between the lowest substrate integrated waveguide cavity and the middle substrate integrated waveguide cavity (the metal layer 4 between the middle cavity and the lowest cavity); preferably, the symmetry axes of the trapezoidal coupling windows on the two metal layers (the metal layer 3 between the uppermost cavity and the middle cavity, and the metal layer 4 between the middle cavity and the lowermost cavity) are crossed in spatial position.
Example 5:
the present embodiment is further optimized based on any of the above embodiments, and the same parts as those in the foregoing technical solutions will not be described herein again, as shown in fig. 1, 2, 3, and 4, in order to further better implement the present invention, the following setting modes are particularly adopted: the sizes of two trapezoidal coupling windows on the metal layer between the uppermost substrate integrated waveguide cavity and the middle substrate integrated waveguide cavity are as follows: the upper bottom is 0.5mm, the lower bottom is 1.1mm, the height is 0.4mm, and the sizes of two trapezoidal coupling windows on the metal layer between the substrate integrated waveguide cavity at the lowest part and the substrate integrated waveguide cavity in the middle are as follows: the upper bottom is 0.5mm, the lower bottom is 0.8mm and the height is 1.3 mm.
Preferably, the two trapezoidal coupling windows on any metal layer are symmetrically arranged through the bottom edge.
Preferably, the substrate material of the substrate integrated waveguide cavity is ULF-140 ceramic material with a relative dielectric constant of 13.3.
Example 6:
in the following description of the embodiments, some technical features well known to those skilled in the art are omitted, but the technical solution is not considered to be disclosed sufficiently without being directly and clearly described in the text, so that the technical solution is blurred.
As shown in fig. 1, the hybrid electromagnetic coupling compact SIW filter based on evanescent mode loading comprises a three-layer substrate integrated waveguide cavity 1, three metal posts 2 loaded at the center of the cavity, a metal layer 3 between the uppermost cavity and the middle cavity, a metal layer 4 between the middle cavity and the lowermost cavity, an uppermost metal layer 5, a lowermost metal layer 6, an input coplanar waveguide 7, and an output coplanar waveguide 8. The size of the substrate integrated waveguide cavity 1 is 7mm 6mm 0.4mm, and the dielectric constant of the ULF-140 ceramic material is 13.3, and the loss tangent value of the ceramic material is 0.0005.
The invention relates to a third-order band-pass filter which is realized based on a substrate integrated waveguide structure, wherein each layer of substrate integrated waveguide cavity 1 is a resonator. As shown in FIG. 1, a metal column 2 with almost the same thickness as the cavity is loaded at the center of a substrate integrated waveguide cavity 1 to form a resonant cavity loaded with an evanescent mode, the bottom of the metal column 2 is in contact with the lower metal surface of the cavity, and a gap of 0.04mm is left between the top of the metal column and the upper metal surface of the cavity, so that the resonant frequency of the fundamental mode of the SIW (substrate integrated waveguide) cavity is reduced.
As shown in fig. 3 and 4, two trapezoidal coupling windows are etched on the middle common metal layer (the metal layer 3 between the uppermost cavity and the middle cavity, and the metal layer 4 between the middle cavity and the lowermost cavity) of each SIW (substrate integrated waveguide) cavity 1, and the two trapezoidal coupling windows are symmetrically disposed at both sides of the center of the cavity. The windowing areas with the two structures have stronger electric field energy and stronger magnetic field energy, so that mixed electromagnetic coupling is realized, and then a transmission zero point is respectively introduced into two sides of a passband, and the selectivity of the filter is improved. As shown in fig. 3, the upper bottom of the trapezoidal coupling window on the metal layer 3 between the uppermost cavity and the middle cavity is 0.5mm, the lower bottom is 1.1mm, and the height is 0.4 mm; as shown in fig. 4, the upper bottom of the trapezoidal coupling window on the metal layer 4 between the middle cavity and the lowest cavity is 0.5mm, the lower bottom is 0.8mm, and the height is 1.3 mm.
As shown in fig. 5, which shows the S-parameters of the hybrid electromagnetically coupled compact SIW filter based on evanescent mode loading, the center frequency is 10.1GHz, the 3dB bandwidth is 280MHz, the relative bandwidth is 2.77%, the minimum insertion loss is 1.82dB, the in-band return loss is better than 19dB, and there is one transmission zero at each of the frequency points of 8.28GHz and 10.99GHz, which has good sideband selectivity.
In conclusion, the band-pass filter (the hybrid electromagnetic coupling compact SIW filter) is simple in structure, convenient to design, good in passband response and double-sideband suppression characteristics, capable of achieving double transmission zeros with fewer orders, compact in size and very suitable for modern radio frequency communication systems.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications and equivalent variations of the above embodiments according to the technical spirit of the present invention are within the scope of the present invention.
Claims (9)
1. Hybrid electromagnetic coupling compact SIW filter based on evanescent mode loading is characterized in that: the metal column is arranged at the center of each layer of the substrate integrated waveguide cavity, metal layers are stacked above and below the substrate integrated waveguide cavity, feeder lines in a coplanar waveguide form are arranged on the metal layers on the uppermost layer and the lowermost layer and used as input or output, and the two feeder lines in the coplanar waveguide form are arranged oppositely in the horizontal direction.
2. The evanescent mode loading based hybrid electromagnetic coupling compact SIW filter according to claim 1, characterized in that: the height of the metal column on each layer is slightly smaller than the thickness of the substrate integrated waveguide cavity of the layer.
3. The evanescent mode loading based hybrid electromagnetic coupling compact SIW filter according to claim 2, characterized in that: the width of the single-layer substrate integrated waveguide cavity is 6mm, the length of the single-layer substrate integrated waveguide cavity is 7.3mm, the thickness of the single-layer substrate integrated waveguide cavity is 0.4mm, the diameter of the metal column is 0.4mm, and the height of the metal column is 0.36 mm.
4. The evanescent mode loading based hybrid electromagnetic coupling compact SIW filter according to claim 1, characterized in that: the substrate integrated waveguide cavity is formed by enclosing edge metal columns which are vertically arranged on the edge of a substrate where the substrate integrated waveguide cavity is located.
5. The evanescent mode loading based hybrid electromagnetic coupling compact SIW filter according to claim 1, characterized in that: two trapezoidal coupling windows which are symmetrically arranged at the center of the cavity by taking a central line as a symmetry axis are arranged on the metal layer between the uppermost substrate integrated waveguide cavity and the middle substrate integrated waveguide cavity; two trapezoidal coupling windows which are symmetrically arranged at the center of the cavity by taking the central line as a symmetry axis are also arranged on the metal layer between the lowest substrate integrated waveguide cavity and the middle substrate integrated waveguide cavity.
6. The evanescent mode loading based hybrid electromagnetic coupling compact SIW filter according to claim 5, wherein: the symmetry axes of the trapezoidal coupling windows on the two metal layers are crossed in spatial position.
7. The evanescent mode loading based hybrid electromagnetic coupling compact SIW filter according to claim 5, wherein: the sizes of two trapezoidal coupling windows on the metal layer between the uppermost substrate integrated waveguide cavity and the middle substrate integrated waveguide cavity are as follows: the upper bottom is 0.5mm, the lower bottom is 1.1mm, the height is 0.4mm, and the sizes of two trapezoidal coupling windows on the metal layer between the substrate integrated waveguide cavity at the lowest part and the substrate integrated waveguide cavity in the middle are as follows: the upper bottom is 0.5mm, the lower bottom is 0.8mm and the height is 1.3 mm.
8. The evanescent mode loading based hybrid electromagnetic coupling compact SIW filter according to claim 5, wherein: two trapezoidal coupling windows on any metal layer are symmetrically arranged through the bottom edge.
9. The evanescent mode loading based hybrid electromagnetic coupling compact SIW filter according to any of claims 1-8, wherein: the substrate material of the substrate integrated waveguide cavity adopts ULF-140 ceramic material with the relative dielectric constant of 13.3.
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