CN114865255B - Half-mode substrate integrated waveguide filter - Google Patents
Half-mode substrate integrated waveguide filter Download PDFInfo
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- CN114865255B CN114865255B CN202210793090.9A CN202210793090A CN114865255B CN 114865255 B CN114865255 B CN 114865255B CN 202210793090 A CN202210793090 A CN 202210793090A CN 114865255 B CN114865255 B CN 114865255B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention relates to a half-mode substrate integrated waveguide filter, which belongs to the technical field of wireless communication and comprises a dielectric substrate, wherein the upper end surface and the lower end surface of the dielectric substrate are respectively provided with cavity top layer metal and cavity bottom layer metal; a plurality of groove-shaped structures are etched on the top metal of the cavity to form a plurality of resonators, the resonators are connected through coupling metal strips to realize magnetic coupling, and electric coupling is realized through the size of a gap between the coupling metal strips and the groove-shaped structures; the resonators at the left end and the right end of the metal on the top layer of the cavity are connected with an input port and an output port, and the resonators are in hybrid coupling to form a pass band of the filter during resonance, so that the function of band-pass filtering is realized. According to the invention, a groove-shaped structure is etched on the top layer of metal to obtain 4 resonators, so that the function of band-pass filtering is realized; hybrid electromagnetic coupling is realized between resonators, transmission zero is introduced, out-of-band rejection and frequency selectivity are improved, and stop band bandwidth is improved.
Description
Technical Field
The invention relates to the technical field of wireless communication, in particular to a half-mode substrate integrated waveguide filter.
Background
The great development of wireless communication technology has greatly promoted the development of low-cost, small volume, good frequency selectivity and wide suppression range band-pass filter. For the base station, the waveguide structure is mainly used in the filter design due to its characteristics of low loss, high power capacity and high quality factor, so that the waveguide structure is widely used. In the last decade, Substrate Integrated Waveguides (SIW) have been widely studied and applied because of their low cost, light weight, low insertion loss, convenient processing, and good compatibility with other planar circuits, etc., which can meet the design requirements of high performance filters.
In order to further reduce the size of the filter, a half-mode substrate integrated waveguide (HMSIW) filter is proposed, which can reduce the size by half while keeping the field structure of a specific resonant mode unchanged on the basis of inheriting the advantages of the substrate integrated waveguide. Most HMSIW filters are single coupling, i.e. single magnetic or electrical coupling. Rectangular waveguides are bulky, expensive, and difficult to integrate with other planar structures. Compared with rectangular waveguides, the substrate integrated waveguide has lighter weight, is easy to process and has better compatibility with other planar structures, but the circuit area is larger. The half-mode substrate integrated waveguide is further reduced in size on the basis of the substrate integrated waveguide, but also has disadvantages of low quality factor and low power capacity. Compared with a filter adopting a hybrid coupling mode, the bandpass filter adopting a single coupling mode cannot introduce transmission zero caused by hybrid electromagnetic coupling, so that the frequency selectivity is poorer, the out-of-band rejection degree is lower, and the corresponding stop band width is narrower.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a half-mode substrate integrated waveguide filter, which solves the defects of the prior filter.
The purpose of the invention is realized by the following technical scheme: a half-mode substrate integrated waveguide filter comprises a dielectric substrate, wherein the upper end surface and the lower end surface of the dielectric substrate are respectively provided with cavity top layer metal and cavity bottom layer metal; a plurality of resonators formed by a plurality of groove-shaped structures and metal through holes penetrating through the dielectric substrate and the metal of the bottom layer of the cavity are etched on the metal of the top layer of the cavity, the resonators are connected through a coupling metal strip to realize magnetic coupling, and electric coupling is realized by setting the size of a gap between the coupling metal strip and the groove-shaped structures, so that mixed electromagnetic coupling is realized; the resonator at the left end of the metal on the top layer of the cavity is connected with an input port, the resonator at the right end is connected with an output port, and the resonators are in hybrid coupling and form a pass band of the filter during resonance, so that the function of band-pass filtering is realized.
The groove-shaped structures are respectively etched at the left end and the right end of the metal at the top layer of the cavity to form four resonators, and the structures of the four resonators are bilaterally symmetrical; the two resonators positioned at the left end and the right end of the metal on the top layer of the cavity are connected through a first coupling metal strip, the two resonators positioned in the middle of the metal on the top layer of the cavity are connected through a second coupling metal strip, and magnetic coupling of the four resonators is realized through the connected first coupling metal strip and the second coupling metal strip.
The width gaps of the plurality of groove-shaped structures are W 1 The width gap of the first coupling metal strip is W 3 Second couplerThe width gap of the metal strip is W 4 (ii) a Through the gap W 1 、W 3 And W 4 The four resonators are electrically coupled and matched with the magnetic coupling to realize hybrid electromagnetic coupling, and transmission zero points are introduced through the hybrid electromagnetic coupling.
The depth of the input port and the output port inserted into the resonator is t, the interval between the input port and the resonator is v, and coplanar waveguide connection with the resonator is realized through coplanar waveguide sizes t and v.
And a capacitor is also connected between the two resonators positioned in the middle of the top metal layer of the cavity, and the transmission zero point positioned on the right side of the passband is moved to the left side through the capacitor, so that the expected frequency response is obtained and the bandwidth requirement of the response is met.
The invention has the following advantages: a half-mode substrate integrated waveguide filter is based on a half-mode substrate integrated waveguide technology and has the advantages of small volume, light weight, convenience in processing and low cost; 4 resonators with 1/4 wavelengths are obtained by etching a groove-shaped structure on the top layer of metal, so that the function of band-pass filtering is realized; hybrid electromagnetic coupling is realized among resonators, a transmission zero point is introduced, out-of-band rejection and frequency selectivity are improved, and stop band bandwidth is improved; the position of a transmission zero point can be changed by adjusting the sizes of the resonator and the coupling metal strip, so that the expected frequency response is realized; a50-ohm microstrip line is adopted as a feeder line, and no complex feeder network exists.
Drawings
FIG. 1 is a schematic structural view of example 1 of the present invention;
FIG. 2 is a schematic top view of embodiment 1 of the present invention and the corresponding parameters;
FIG. 3 is a top view of embodiment 2 of the present invention and the corresponding parameters;
FIG. 4 electric field distribution diagram corresponding to four resonance points of example 1;
FIG. 5(a) shows a differencel 6 A corresponding forward transmission coefficient diagram;
FIG. 5(b) shows different capacitance valuescA corresponding forward transmission coefficient diagram;
FIG. 5(c) shows the differencel 8 A corresponding forward transmission coefficient diagram;
FIG. 5(d) shows the differencel 5 A corresponding forward transmission coefficient diagram;
in the figure: the resonator comprises a metal through hole 1, a dielectric substrate 2, an input port 3, an output port 4, a cavity bottom layer metal 5, a coupling metal strip 6, a cavity top layer metal 7, a groove type structure 8, a resonator 9 and a capacitor 10.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations. Thus, the detailed description of the embodiments of the present application provided below in connection with the appended drawings is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present application without making any creative effort, shall fall within the protection scope of the present application. The invention is further described below with reference to the accompanying drawings.
As shown in fig. 1, embodiment 1 of the present invention relates to a half-mode substrate integrated waveguide filter, which includes a dielectric substrate 2, wherein a cavity top layer metal 7 and a cavity bottom layer metal 5 are respectively disposed on upper and lower end surfaces of the dielectric substrate 2; a plurality of resonators 9 formed by a plurality of groove-shaped structures 8 and metal through holes 1 penetrating through the dielectric substrate 2 and the cavity bottom layer metal 5 are etched on the cavity top layer metal 7, the resonators 9 are connected through coupling metal strips 6 to realize magnetic coupling, and electric coupling is realized by setting the gap size of the coupling metal strips 6 and the groove-shaped structures 8, so that mixed electromagnetic coupling is realized; the resonator 9 at the left end of the top metal 7 of the cavity is connected with the input port 3, the resonator 9 at the right end is connected with the output port 4, and the resonators 9 are in hybrid coupling and form a pass band of the filter during resonance, so that the function of band-pass filtering is realized.
Further, a plurality of groove-shaped structures 8 are respectively etched at the left end and the right end of the cavity top metal 7 to form four resonators 9 with the length of 1/4 wavelengths, and the structures of the four resonators 9 are in bilateral symmetry; the two resonators 9 located at the left end and the right end of the cavity top layer metal 7 are connected through a first coupling metal strip, the two resonators 9 located in the middle of the cavity top layer metal 7 are connected through a second coupling metal strip, and magnetic coupling of the four resonators 9 is achieved through the connected first coupling metal strip and the second coupling metal strip.
The invention forms a half-mode substrate integrated waveguide structure by four resonators 9 which are opposite from left to right, namely the substrate integrated waveguide is divided into two parts along the length direction, the symmetrical plane can be regarded as an equivalent magnetic wall, and the boundary condition on the magnetic wall determines that certain specific resonance modes can not be excited, thereby naturally improving the out-of-band rejection capability and the passband bandwidth of the filter.
Further, as shown in FIG. 2, the plurality of groove-shaped structures 8 have a width gap W 1 =3.17mm, width gap of the first coupling metal strip is W 3 =1.6mm, width gap of the second coupling metal strip is W 4 =0.5 mm; through the gap W 1 、W 3 And W 4 The four resonators 9 are electrically coupled and matched with the magnetic coupling to realize hybrid electromagnetic coupling, and transmission zero is introduced through the hybrid electromagnetic coupling, so that out-of-band rejection is improved, and frequency selectivity and stop band bandwidth are improved.
Further, the input port 3 and the output port 4 are inserted into the resonator 9 to a depth of t =2.68mm and spaced from the resonator 9 by v =0.78mm, and the coplanar waveguide form connection with the resonator 9 is achieved by coplanar waveguide dimensions t and v.
Further, a plurality of metal through holes 1 are arranged side by side at equal intervals on the upper end of the cavity top layer metal 7 and the side walls of the left and right resonators 9, the interval S =0.8mm and the diameter d =0.4mm between each metal through hole 1, and the length of the metal through holes 1 arranged at the upper end of the cavity top layer metal 7l 1 =23.6mm，l 2 =6.85mm ，l 3 =3.95mm, and the distance between the edges of the microstrip lines of the input port 3 and the output port 4 and the middle point of the narrow edge of the filteroffset=0.3 mm; the width w =1.54mm of the input port 3 and the output port 4.
Furthermore, an upper groove-shaped structure 8 and a lower groove-shaped structure 8 are respectively etched at the left end and the right end of the cavity top metal 7, the upper groove-shaped structure 8 and the lower groove-shaped structure 8 are separated through a first coupling metal strip, and the width of the upper groove-shaped structure 8 is W 1 =3.17mm, length of the underlying channel structure 8l 5 =6.6mm, length from upper end of upper channel structure 8 to lower end of lower channel structure 8l 4 =13.1 mm; the width w of two resonators 9 at the left and right ends of the top metal 7 of the cavity 5 Width w of two resonators 9 located in the middle, =4.3mm 6 =5.1mm, the gap between the two resonators 9, i.e. the length w of the second coupling metal strip 2 =0.42mm。
As shown in fig. 3, another embodiment 2 of the present invention is based on embodiment 1, and a capacitor 10 is further connected between two resonators 9 located in the middle of the top layer metal 7 of the cavity, where c in fig. 3 denotes the capacitor, and the transmission zero located on the right side of the passband is shifted to the left side by the capacitor 10, so as to obtain the desired frequency response and meet the bandwidth requirement of the response.
The structure of the slot-type structure 8 below the left end and the right end in embodiment 2 is different from the structure of the slot-type structure 8 below the left end and the right end in embodiment 1, the slot-type structure 8 below the left end and the right end in embodiment 1 is a square structure, and the slot-type structure 8 below the left end and the right end in embodiment 2 is provided with a gap of g =0.2mm at the lower ends of two resonators 9 on the basis of the square structure, so that the distance between the open ends of the resonators is reduced, the electric coupling between the resonators is increased, and the transmission zero point which is originally far away from the central frequency can be moved to a position closer to a passband; the distance of the capacitor 10 from the bottom of the resonator 9l 7 =6.6mm, in this example 2l 1 =20.4mm，l 2 =6.95mm， l 3 =3.45mm， l 4 =12.14mm，l 5 =6.3 mm， l 6 =9.75 mm， l 7 =6.6 mm， l 8 =1.5 mm，w=1.54 mm，w 1 =1.6 mm，w 2 =0.5 mm，w 3 =0.6 mm，w 4 =0.5 mm，w 5 =3.95 mm， w 6 =4.7 mm， v=0.5 mm， t=2.9 mm，d=0.4 mm，s=0.8 mm，offset=0.6 mm。
The electric field distribution obtained after etching the groove-type structure 8 on the top metal 7 of the cavity is shown in fig. 4, the electric fields of the resonant modes are mainly and intensively distributed around the gaps between the resonators 9 and near the open end of the resonators 9, and the three gap regions between the four resonators 9 separate the resonant modes from each other, so that the resonant modes of the structure are very similar to those of the microstrip line resonators. These four resonators 9 may be equivalent to microstrip resonators of length 1/4 wavelengths.
As shown in fig. 5(a) -5 (d), the position of the transmission zero point located on the left side of the pass band can be largely changed by changingl 6 Andcis controlled by the value of (c).l 6 Can reduce the magnetic coupling strength between the two resonators in the middle, andcthis increase in the coupling strength between the two resonators in the middle increases, which can result in a leftward shift of this transmission zero. The position of the transmission zero point at the right side of the passband can be adjustedl 8 Andl 5 is controlled. Increase ofl 8 The capacitance at the open end is increased, so that the electric coupling strength between the leftmost two resonators and the electric coupling strength between the rightmost two resonators are increased, and the transmission zero point is shifted to the left. And thenl 5 The increase in the transmission zero point may weaken the magnetic coupling strength between the leftmost two resonators and the magnetic coupling strength between the rightmost two resonators, thereby shifting the transmission zero point to the left.
The foregoing is illustrative of the preferred embodiments of this invention, and it is to be understood that the invention is not limited to the precise form disclosed herein and that various other combinations, modifications, and environments may be resorted to, falling within the scope of the concept as disclosed herein, either as described above or as apparent to those skilled in the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (4)
1. A half-mode substrate integrated waveguide filter, characterized in that: the metal-clad laminate comprises a dielectric substrate (2), wherein the upper end face and the lower end face of the dielectric substrate (2) are respectively provided with a cavity top layer metal (7) and a cavity bottom layer metal (5); a plurality of resonators (9) formed by a plurality of groove-shaped structures (8) and metal through holes (1) penetrating through the dielectric substrate (2) and the cavity bottom layer metal (5) are etched on the cavity top layer metal (7), the resonators (9) are connected through coupling metal strips (6) to realize magnetic coupling, and electric coupling is realized by setting the size of gaps between the coupling metal strips (6) and the groove-shaped structures (8), so that mixed electromagnetic coupling is realized; an input port (3) is connected to the resonator (9) at the left end of the top metal (7) of the cavity, an output port (4) is connected to the resonator (9) at the right end, and the resonators (9) are in hybrid coupling and form a pass band of the filter during resonance, so that the function of band-pass filtering is realized;
the groove-shaped structures (8) are respectively etched at the left end and the right end of the cavity top layer metal (7) to form four resonators (9), and the structures of the four resonators (9) are bilaterally symmetrical; the two resonators (9) positioned at the left end and the right end of the cavity top layer metal (7) are connected through a first coupling metal strip, the two resonators (9) positioned in the middle of the cavity top layer metal (7) are connected through a second coupling metal strip, and the magnetic coupling of the four resonators (9) is realized through the connected first coupling metal strip and the second coupling metal strip; each resonator (9) has an open end, and the open ends of each resonator (9) are located on the same side of the metal via (1).
2. The half-die substrate integrated waveguide filter of claim 1, wherein: the width gaps of the groove-shaped structures (8) are W 1 The width gap of the first coupling metal strip is W 3 Second coupling metal stripHas a width gap of W 4 (ii) a Through the gap W 1 、W 3 And W 4 So that the four resonators (9) realize electric coupling and realize mixed electromagnetic coupling by matching with the magnetic coupling, and a transmission zero point is introduced by the mixed electromagnetic coupling.
3. The half-die substrate integrated waveguide filter of claim 1, wherein: the input port (3) and the output port (4) are inserted into the resonator (9) to a depth t, the input port and the output port are spaced from the resonator (9) by a distance v, and coplanar waveguide connection with the resonator (9) is achieved through coplanar waveguide sizes t and v.
4. The half-die substrate integrated waveguide filter of claim 1, wherein: and a capacitor (10) is also connected between the two resonators (9) positioned in the middle of the top metal (7) of the cavity, and the transmission zero point positioned on the right side of the passband is moved to the left side through the capacitor (10), so that the expected frequency response is obtained and the bandwidth requirement of the response is met.
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| CN103700910A (en) * | 2014-01-08 | 2014-04-02 | 西南大学 | Complementary opening resonance ring and defect ground structure half module substrate integrated waveguide dual-band filter |
| CN212257633U (en) * | 2020-05-10 | 2020-12-29 | 重庆安全技术职业学院 | Half-mode substrate integrated waveguide dual-band filter |
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| GB201210114D0 (en) * | 2012-06-08 | 2012-07-25 | Ucl Business Plc | Antenna configuration for use in a mobile communication device |
| EP3367496B1 (en) * | 2016-01-29 | 2020-10-07 | Huawei Technologies Co., Ltd. | Filter unit and filter |
| CN106450608A (en) * | 2016-09-20 | 2017-02-22 | 南京理工大学 | Open-circuit branch loaded semi-module substrate integrated waveguide band-pass filter |
| CN109768358B (en) * | 2019-02-25 | 2020-08-18 | 广东曼克维通信科技有限公司 | Coupling folding substrate integrated waveguide filter |
| CN212085189U (en) * | 2020-05-09 | 2020-12-04 | 中国人民武装警察部队工程大学 | Miniaturized substrate integrated waveguide fully-tunable filter |
| CN114335955B (en) * | 2021-12-29 | 2023-04-11 | 杭州电子科技大学 | Unequal-division band-pass filtering power divider based on HMSIW-SSPP mixed mode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103700910A (en) * | 2014-01-08 | 2014-04-02 | 西南大学 | Complementary opening resonance ring and defect ground structure half module substrate integrated waveguide dual-band filter |
| CN212257633U (en) * | 2020-05-10 | 2020-12-29 | 重庆安全技术职业学院 | Half-mode substrate integrated waveguide dual-band filter |
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