CN110474137B - Multilayer three-way power division filter based on SIW - Google Patents
Multilayer three-way power division filter based on SIW Download PDFInfo
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- CN110474137B CN110474137B CN201910807335.7A CN201910807335A CN110474137B CN 110474137 B CN110474137 B CN 110474137B CN 201910807335 A CN201910807335 A CN 201910807335A CN 110474137 B CN110474137 B CN 110474137B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
Abstract
The invention discloses a multilayer three-way power division filter based on SIW (substrate integrated waveguide), which comprises a top medium substrate and a bottom medium substrate, wherein a metal grounding plate is arranged on the upper surface of the bottom medium substrate, a metal layer is arranged on the lower surface of the bottom medium substrate, an input port feeder is arranged on the bottom medium substrate, a first output port feeder, a second output port feeder and a third output port feeder are arranged on the top medium substrate, an isolation resistor is arranged between the first output port feeder and the third output port feeder, and an isolation resistor is arranged between the second output port feeder and the third output port feeder.
Description
Technical Field
The invention relates to the technical field of microwave passive devices, in particular to a multilayer three-way power division filter based on SIW.
Background
The Substrate Integrated Waveguide (SIW) technology is a planar waveguide technology proposed in recent years, which inherits the advantages of low loss, high quality factor, large power capacity and the like of a waveguide, and integrates the advantages of low profile, small size, easiness in integration with other planar circuits and the like of a microstrip. With the rapid development of modern wireless communication technology, the power divider and the filter, which are the most important two devices at the front end of radio frequency, are highly integrated to form a power divider filter, so that the design requirement of miniaturization is met while high performance is obtained. Compared with the traditional even-path equal power division filter, the odd-path equal power division structure is utilized to realize equal/unequal energy distribution among output ports, so that the high-performance design requirement can be realized, and therefore, the design of the three-path equal/unequal power division filter based on the SIW structure is also widely concerned by students in recent years.
Document 1(y.j.wang, c.x.zhou and k.zhou, "Compact-band filtering power divider based on SIW triangular filters," electron.lett., vol.54, No.18, pp.1072-1074, sep.2018.) designs a two-way power division filter using a triangular SIW resonator, which achieves good isolation effect by adding isolation resistors between output ports, but has large return loss.
Document 2 (m.danaian, a.r.moznebi, k.afrook and h.hakimi, "miniaturized equivalent/unequal SIW power divider with band pass filtered loaded by CSRRs," electron.let, vol.52, No.22, pp.1864-1866, oct.2016.) designs a miniaturized equal/unequal power division filter loading a band pass filter response based on a substrate integrated waveguide structure, and arbitrarily controls a power ratio by adjusting parameters of the CSRRs, but this type of power division filter does not take into account an isolation effect between output ports.
Document 3(k.j.song and s.guo, "Compact three-way filtering bad composite right/left transmitted transmission lines," IET micro.antennas, vol.12, No.6, pp.909-912,2018.) proposes a three-way power division filter network, which cannot achieve good filtering effect and isolation.
Disclosure of Invention
The purpose of the invention is as follows: the invention aims to solve the technical problem of the prior art and provides a multilayer three-way power division filter based on SIW.
In order to solve the technical problem, the invention discloses a multilayer three-way power division filter based on SIW, which comprises a top layer medium substrate and a bottom layer medium substrate, wherein a metal grounding plate is arranged on the upper surface of the bottom layer medium substrate, a metal layer is arranged on the lower surface of the bottom layer medium substrate, an input port feeder line is arranged on the bottom layer medium substrate, a first output port feeder line, a second output port feeder line and a third output port feeder line are arranged on the top layer medium substrate, an isolation resistor is arranged between the first output port feeder line and the third output port feeder line, and an isolation resistor is arranged between the second output port feeder line and the third output port feeder line.
In the invention, the input port feeder comprises an input 50 ohm microstrip line conduction band and an SIW-coplanar waveguide conversion structure, and the SIW-coplanar waveguide conversion structure is positioned on two sides of the input 50 ohm microstrip line conduction band.
In the invention, the first output port feeder line comprises a first 50 ohm microstrip line conduction band and a first coupling output line, one end of the first coupling output line is vertical to the first edge of the top layer dielectric substrate, the other end of the first coupling output line is connected with the first 50 ohm microstrip line conduction band, the first 50 ohm microstrip line conduction band is of an L-shaped structure, and the other end of the first 50 ohm microstrip line conduction band extends to the second edge of the top layer dielectric substrate.
In the invention, the second output port feeder line comprises a second 50 ohm microstrip line conduction band and a second coupling output line, one section of the second coupling output line is vertical to a third edge opposite to the first edge, the other end of the second coupling output line is connected with the second 50 ohm microstrip line conduction band, the second 50 ohm microstrip line conduction band is of an L-shaped structure, and the other end of the second 50 ohm microstrip line conduction band extends to the second edge of the top layer dielectric substrate.
In the invention, the third output port feeder line comprises a third 50 ohm microstrip line conduction band and a third coupling output line, one end of the third 50 ohm microstrip line conduction band is vertical to a fourth edge opposite to the second edge, the other end of the third 50 ohm microstrip line conduction band is connected with the third coupling output line, the third coupling output line is positioned in the middle of the first 50 ohm microstrip line conduction band and the second 50 ohm microstrip line conduction band, and the first output port feeder line and the second output port feeder line are symmetrically arranged on two sides of the third output port feeder line.
In the invention, a first SIW rectangular resonant cavity and a second SIW rectangular resonant cavity are arranged on the bottom layer medium substrate, the sizes of the first SIW rectangular resonant cavity and the second SIW rectangular resonant cavity are equal, a coupling window is arranged at the position where the first SIW rectangular resonant cavity is adjacent to the second SIW rectangular resonant cavity, and a feed line of an input port is communicated with the second SIW rectangular resonant cavity.
In the invention, a first rectangular coupling groove and a second rectangular coupling groove are arranged on the metal grounding plate, and the first rectangular coupling groove is positioned in a second SIW resonant cavity;
the second rectangular coupling groove is positioned on one side of the metal grounding plate, which is far away from the second SIW resonant cavity.
Drawings
The foregoing and/or other advantages of the invention will become further apparent from the following detailed description of the invention when taken in conjunction with the accompanying drawings.
Fig. 1 is a schematic perspective view of a multilayer three-way equal/unequal power division filter circuit based on SIW.
Fig. 2 is a top view of fig. 1.
Fig. 3 is a schematic structural dimension diagram of the equal power division filter in embodiment 1.
Fig. 4 is a simulation graph of the S parameter of the equal power division filter of example 1.
Fig. 5 is a simulation graph of the isolation characteristic S parameter between the three output ports of the equal power division filter of embodiment 1.
Fig. 6 is a schematic diagram of the structure size of the unequal power division filter in embodiment 2.
Fig. 7 is a simulation graph of the S parameter of the unequal power division filter of example 2.
FIG. 8 is a simulation graph of the S-parameter of the isolation characteristics between the three output ports of the unequal power division filter in example 2
In the figure, an input port feeder 1, a first output port feeder 2, a second output port feeder 3, a third output port feeder 4, a first SIW rectangular resonant cavity 5, a second SIW rectangular resonant cavity 6, a coupling window 7, a bottom rectangular dielectric substrate 8, a top rectangular dielectric substrate 9, a metal ground plate 10, a bottom metal layer 13, a first rectangular coupling slot 14, a second rectangular coupling slot 15, a first isolation resistor 16 and a second isolation resistor 17.
Inputting a 50 ohm microstrip line conduction band 11, an SIW-coplanar waveguide conversion structure 12,
a first 50 ohm microstrip conduction band 21, a first coupled output line 22,
a second 50 ohm microstrip conduction band 31, a second coupled output line 33,
a third 50 ohm microstrip line conduction band 41, a second coupled output line 44.
Detailed Description
Example 1:
as shown in fig. 1 and fig. 2, this embodiment provides a multilayer three-way power division filter based on SIW, which includes a top rectangular dielectric substrate 9 and a bottom rectangular dielectric substrate 8 having a metal ground plate 10 on an upper surface and a metal layer 13 on a lower surface, a rectangular coupling slot 14 is etched on the metal ground plate, an input end of an input port feeder 1 is located at one short side of the bottom rectangular dielectric substrate 8, output ends of a first output port feeder 2 and a second output port feeder 3 are located at two sides of the top rectangular dielectric substrate 9, and an output end of a third output port feeder 4 is located in the middle of one narrow side of the top rectangular dielectric substrate 9. A first isolation resistor 16 is arranged between the first output port feeder 2 and the third output port feeder 4, and a second isolation resistor 17 is arranged between the second output port feeder 3 and the third output port feeder 4.
The input port feeder 1 comprises an input 50-ohm microstrip line conduction band 11 and an SIW-coplanar waveguide conversion structure 12, wherein the input end of the 50-ohm microstrip line conduction band 11 is positioned at one quarter of one short side of a bottom rectangular dielectric substrate 8 and connected with a first SIW rectangular resonant cavity 5, and the SIW-coplanar waveguide conversion structure 12 is positioned at two sides of the input 50-ohm microstrip line conduction band 11.
The first output port feeder 2 comprises a first 50-ohm microstrip line conduction band 21 and a first coupling output line 22, one end of the first 50-ohm microstrip line conduction band 21 is located on one side, close to the long side of the bottom rectangular dielectric plate 8, of the top rectangular dielectric substrate 9, the other end of the first 50-ohm microstrip line conduction band is connected with the end face of the short side of the first coupling output line 22 bent in an L shape, a triangular cut angle is formed in the L-shaped outer right angle of the first coupling output line 22, the L-shaped long side of the first coupling output line 22 is parallel to one side, close to the long side of the bottom rectangular dielectric plate 8, of the top rectangular dielectric substrate 9, and the end point of the L-shaped long side of the first coupling output line 22.
The second output port feeder line 3 comprises a second 50-ohm microstrip line conduction band 31 and a second coupling output line 33, one end of the second 50-ohm microstrip line conduction band 31 is located on one side, close to the other long side of the bottom rectangular dielectric plate 8, of the top rectangular dielectric substrate 9, the other end of the second 50-ohm microstrip line conduction band 31 is connected with the end face of the short side of the second coupling output line 33 which is bent in an L shape, a triangular cut angle is formed in the L-shaped outer right angle of the second coupling output line 33, the L-shaped long side of the second coupling output line 33 is parallel to one side, close to the long side of the bottom rectangular dielectric plate 8, of the top rectangular dielectric substrate 9, and the end point of the L-shaped long side of the second coupling output line 33 exceeds the first rectangular.
The third output port feeder line 4 comprises a third 50 ohm microstrip line conduction band 41 and a third coupling output line 44, one end of the third 50 ohm microstrip line conduction band 41 is located at the center of one edge of the top rectangular dielectric substrate 9 close to the short edge of the bottom rectangular dielectric plate 8, the other end of the third 50 ohm microstrip line conduction band is connected with the third coupling output line 44, the third coupling output line 44 is parallel to one edge of the top rectangular dielectric substrate 9 close to the long edge of the bottom rectangular dielectric plate 8, and the end point of the third coupling output line 44 exceeds the first rectangular coupling slot 14 and is parallel to the first coupling output line 22 and the second coupling output line 33.
The first SIW rectangular resonant cavity 5 and the second SIW rectangular resonant cavity 6 are equal in size, the long edge of the first SIW rectangular resonant cavity 5 is adjacent to the long edge of the second SIW rectangular resonant cavity 6, the narrow edges of the two cavities are parallel to the long edge of the bottom rectangular dielectric plate 8, and the coupling window 7 is located at the middle point of the adjacent long edges of the two resonant cavities.
The first SIW rectangular resonant cavity 5 and the second SIW rectangular resonant cavity 6 are composed of metallized through holes, so that the processing precision is high, the size is small, and high frequency, strong anti-interference performance and high integration level can be realized.
The first rectangular coupling slot 14 is located on one side of the metal ground plate 10 close to the second SIW resonant cavity 6, the long side of the first rectangular coupling slot 14 is parallel to the short side of the bottom rectangular dielectric substrate 8, the distance between the long side of the bottom rectangular dielectric substrate 8 and the long side of the first rectangular coupling slot 14 is equal, and the short side of the first rectangular coupling slot 14 is parallel to the long side of the bottom rectangular dielectric substrate 8.
The second rectangular coupling slot 15 is located on one side of the metal ground plate 10 close to the third 50 ohm microstrip line conduction band 41, and one long side of the second rectangular coupling slot 15 close to the second SIW rectangular resonant cavity 6 and one side of the third 50 ohm microstrip line conduction band 41 close to the third output coupling 44 are on a vertical line.
The isolation resistor 16 is connected between the long side of the first coupling-output line 22 and the long side of the third coupling-output line 44 through a small patch, and the isolation resistor 17 is connected between the long side of the second coupling-output line 33 and the long side of the third coupling-output line 44 through a small patch
In the manufacturing process, the front surface and the back surface of the bottom layer circuit substrate and the metal surface of the front surface of the top layer substrate are processed and corroded, and a circle of metallized round holes are punched in the substrate, so that the required SIW power division filter circuit structure is formed, the structure can be realized on a multilayer substrate, the structure is compact, and the miniaturization performance is realized. Meanwhile, the energy transmission of the SIW-upper-layer micro-strip is realized by utilizing the coupling groove-shaped structure, a transmission zero is generated, the out-of-band frequency selectivity is obtained, and the good port isolation characteristic is obtained by skillfully placing reasonable isolation resistors among the three ports. The SIW-based multilayer three-way equal/unequal power division filter has the advantages of compact structure, high selectivity, good port matching performance, adjustable power distribution ratio and good port spacing, and is suitable for modern wireless communication systems.
The present invention will be described in further detail with reference to examples.
The three-dimensional structure of the multilayer three-way equal/unequal power division filter based on SIW is shown in fig. 1, and the top view is shown in fig. 2, wherein the relevant dimension specifications of the equal power division filter are shown in fig. 3. The dielectric substrate 7 used had a relative dielectric constant of 2.2, a thickness of 0.508mm and a loss tangent of 0.0009. With reference to fig. 3, the parameters of the equivalent power division filter are as follows: w is a1＝15.45mm,wa＝1mm,wc＝5.35mm,ws＝0.61mm,ws1＝1.2mm,ws2＝1.2mm,wms＝1.56mm,l1＝10.35mm,lk＝7.8mm,lm＝3.75mm,ln＝3.85mm,lt＝2.95mm,lp＝1.5mm,ls＝3.6mm,ls1＝5.23mm,ls2＝3.8mm,tio3.9mm, p 1, d 0.6mm, c 1mm and g 1.2 mm. The total area of the conduction band of the three-way equal/unequal power division filter comprising 50 ohm microstrip lines is 21.4 multiplied by 35.1mm2The corresponding guided wave length dimension is 1.25 lambdag×2.05λgWherein λ isgThe guided wave wavelength is corresponding to the center frequency of the passband.
The SIW multilayer three-way equipower splitting filter is modeled and simulated in electromagnetic simulation software HFSS.13.0. Fig. 4 is a simulation diagram of the S-parameter of the equal power division filter in this example, and it can be seen that the passband center frequency of the equal power division filter is 11.8GHz, the 3-dB fractional bandwidth is 5.9%, and the in-band return loss is less than-19.6 dB. Two resonance poles are arranged in the pass band, and a resonance zero outside the pass band is positioned at 10.5GHz, so that the equivalent power division filter of the embodiment has good frequency selectivity.
Fig. 5 is a simulation diagram of the isolation S parameter between the three output ports of the equivalent power division filter of this example, and it can be seen from the diagram that the isolation between the port 2 and the port 4 is lower than-16 dB, and the isolation between the port 2 and the port 3 is lower than-16.5 dB in the operating frequency range of the equivalent power division filter of this example.
Example 2:
the parameters of the unequal power division filter in the figure 6 are as follows: w is a1＝15.45mm,wa＝1mm,wc＝5.35mm,ws＝0.61mm,ws1＝1.05mm,ws2＝1.3mm,wms＝1.56mm,l1＝10.35mm,lk＝7.75mm,lm＝3.75mm,ln＝3.75mm,lt＝2.95mm,lp＝0.5mm,ls＝3.6mm,ls1＝5.23mm,ls2＝4mm,tio＝3.9mm,p＝1,d＝0.6mm,c＝1mm and g＝1.2mm。
Fig. 7 is a simulation diagram of the S parameter of the unequal power division filter in this example, and it can be seen from the diagram that the passband center frequency of the unequal power division filter is 11.8GHz, the 3-dB fractional bandwidth is 5.9%, the in-band return loss is less than-18 dB, and the three-way power division ratio is 1:1: 1.5. Two resonance poles are arranged in the passband, and a resonance zero outside the passband is positioned at 10.8GHz, so that the unequal power division filter of the embodiment has good frequency selectivity.
Fig. 8 is a simulation diagram of the isolation S parameter between the three output ports of the unequal power division filter of the present example, and it can be seen from the diagram that the isolation between the port 2 and the port 4 of the equal power division filter of the present example is lower than-16.8 dB, and the isolation between the port 2 and the port 3 is lower than-18 dB in the operating frequency range.
In summary, the multilayer three-way equal/unequal power division filter based on the SIW structure of the invention is based on two square SIW resonant cavities TE101Mode, realizing filtering effect; the rectangular coupling slot is combined with a transition structure from the SIW resonant cavity to the microstrip line, three paths of equal/unequal power division are realized, and a good isolation effect between output ports is realized by placing appropriate resistors among three ports. The three-way equal/unequal power division filter is very suitable for modern wireless communication systems.
The present invention provides a thought and a method of a multilayer three-way power division filter based on SIW, and a plurality of methods and ways for implementing the technical solution are provided, the above description is only a preferred embodiment of the present invention, it should be noted that, for those skilled in the art, a plurality of improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be regarded as the protection scope of the present invention. All the components not specified in the present embodiment can be realized by the prior art.
Claims (6)
1. A multilayer three-way power division filter based on SIW is characterized by comprising a top layer dielectric substrate (9) and a bottom layer dielectric substrate (8), wherein a metal grounding plate (10) is arranged on the upper surface of the bottom layer dielectric substrate (8), a metal layer (13) is arranged on the lower surface of the bottom layer dielectric substrate (8), an input port feeder (1) is arranged on the bottom layer dielectric substrate (8), a first output port feeder (2), a second output port feeder (3) and a third output port feeder (4) are arranged on the top layer dielectric substrate (9), a first isolation resistor (16) is arranged between the first output port feeder (2) and the third output port feeder (4), and a second isolation resistor (17) is arranged between the second output port feeder (3) and the third output port feeder (4); the first output port feeder line (2) comprises a first 50-ohm microstrip line conduction band (21) and a first coupling output line (22), one end of the first coupling output line (22) is perpendicular to a first edge (9a) of the top layer dielectric substrate (9), the other end of the first coupling output line is connected with the first 50-ohm microstrip line conduction band (21), the first 50-ohm microstrip line conduction band (21) is of an L-shaped structure, and the other end of the first 50-ohm microstrip line conduction band (21) extends to a second edge (9b) of the top layer dielectric substrate (9).
2. A SIW-based multilayer three-way power division filter according to claim 1, wherein the input port feed (1) comprises an input 50 ohm microstrip conduction band (11) and a SIW-coplanar waveguide transition structure (12), the SIW-coplanar waveguide transition structure (12) being located on both sides of the input 50 ohm microstrip conduction band (11).
3. A SIW-based multilayer three-way power division filter according to claim 1, wherein the second output port feeder (3) comprises a second 50 ohm microstrip conduction band (31) and a second coupled output line (33), the second coupled output line (33) has a section perpendicular to a third side (9c) opposite to the first side (9a), and another end connected to the second 50 ohm microstrip conduction band (31), the second 50 ohm microstrip conduction band (31) is of an L-shaped structure, and another end of the second 50 ohm microstrip conduction band (31) extends to the second side (9b) of the top dielectric substrate (9).
4. A SIW-based multilayer three-way power division filter according to claim 3, wherein the third output port feeder (4) comprises a third 50 ohm microstrip conduction band (41) and a third coupled output line (44), the third 50 ohm microstrip conduction band (41) has one end perpendicular to the fourth side (9d) opposite to the second side (9b) and the other end connected to the third coupled output line (44), the third coupled output line (44) is located in the middle of the first 50 ohm microstrip conduction band (21) and the second 50 ohm microstrip conduction band (31), and the first output port feeder (2) and the second output port feeder (3) are symmetrically arranged on both sides of the third output port feeder (4).
5. A SIW-based multilayer three-way power division filter according to claim 3, wherein a first SIW rectangular resonant cavity (5) and a second SIW rectangular resonant cavity (6) are arranged on the bottom layer medium substrate (8), the sizes of the first SIW rectangular resonant cavity (5) and the second SIW rectangular resonant cavity (6) are equal, a coupling window (7) is arranged at the position where the first SIW rectangular resonant cavity (5) is adjacent to the second SIW rectangular resonant cavity (6), and the input port feeder (1) is communicated with the second SIW rectangular resonant cavity (6).
6. A SIW-based multilayer three-way power division filter according to claim 3, wherein the metal ground plate (10) is provided with a first rectangular coupling slot (14) and a second rectangular coupling slot (15), the first rectangular coupling slot (14) is located in the second SIW resonant cavity (6);
the second rectangular coupling slot (15) is positioned on the side of the metal ground plate (10) which is far away from the second SIW resonant cavity (6).
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| CN111029702B (en) * | 2019-12-08 | 2021-07-23 | 南京航空航天大学 | Waveguide three-way power divider with built-in load |
| CN111628257B (en) * | 2020-06-01 | 2021-09-24 | 中天宽带技术有限公司 | Filtering power divider |
| CN112002974B (en) * | 2020-08-28 | 2021-12-07 | 成都频岢微电子有限公司 | Miniaturized SIW resonant cavity and wide-stop-band SIW filter formed by same |
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| CN113193323B (en) * | 2021-05-04 | 2021-10-29 | 南通大学 | Half-mode substrate integrated waveguide-based four-way unequal power division filtering power divider |
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| US9337159B2 (en) * | 2013-12-13 | 2016-05-10 | Infineon Technologies Ag | Semiconductor package with integrated microwave component |
| CN104091990B (en) * | 2014-07-16 | 2016-10-19 | 东南大学 | A kind of multichannel substrate integration wave-guide filtering power splitter |
| CN105070993B (en) * | 2015-08-19 | 2018-05-11 | 中国电子科技集团公司第二十八研究所 | Compact dual-frequency bandpass filter based on stack medium integrated waveguide |
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