CN212085189U - Miniaturized substrate integrated waveguide fully-tunable filter - Google Patents
Miniaturized substrate integrated waveguide fully-tunable filter Download PDFInfo
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- CN212085189U CN212085189U CN202020749127.4U CN202020749127U CN212085189U CN 212085189 U CN212085189 U CN 212085189U CN 202020749127 U CN202020749127 U CN 202020749127U CN 212085189 U CN212085189 U CN 212085189U
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Abstract
The utility model discloses a miniaturized substrate integrated waveguide fully tunable filter, which comprises an upper dielectric layer, an upper metal layer, a middle dielectric layer, a middle metal layer, a lower dielectric layer and a lower metal layer which are sequentially stacked from top to bottom, wherein a metal through hole array penetrates through the edge of the middle metal layer from top to bottom to form a cascade resonant cavity, and the cascade resonant cavity is coupled by two double-folded quarter-mode substrate integrated waveguide resonant cavities through a coupling window of the middle metal layer; and a plurality of pairs of PIN diodes, a first variable capacitance diode and a second variable capacitance diode are arranged on the upper dielectric layer. The utility model realizes the adjustment of the center frequency by controlling the external loading voltage of the PIN diode; the adjustment of the transmission zero point of the broadband filter is controlled by adjusting the external loading voltage of the first variable capacitance diode to change the cross coupling; adjusting the external loading voltage of the second variable capacitance diode to change the interstage coupling to control the adjustment of the bandwidth of the broadband filter; the bandwidth is kept stable when adjusting the frequency and transmission zero.
Description
Technical Field
The utility model belongs to the technical field of the wave filter, concretely relates to full tunable filter of integrated waveguide of miniaturized substrate.
Background
Both military communication and civil communication systems require communication devices to be miniaturized and generalized. In order to improve the utilization rate of frequency spectrum resources, technologies such as spread spectrum, frequency hopping, dynamic frequency allocation and the like are widely applied, and the wide application of the technologies meets the requirement of rapid adjustability or reconfigurability of a filter, so that the research of the adjustable filter is more and more focused.
The fully tunable filter can be fused with various tunable functions, flexibly changes parameters of the fully tunable filter, and better adapts to a complex-transformation communication environment. Under the conditions that the spectrum resources are highly tense nowadays and the standards of the existing communication equipment are uneven, the fully tunable filter undoubtedly has extremely high research significance and application value. Scholars at home and abroad carry out a great deal of research on the fully tunable filter in the multiband communication system, and obtain good effects in realizing the adjustability of parameters such as the center frequency, the bandwidth, the transmission zero point, the order, the Q value, the group delay and the like of the filter.
However, as a development target of an ideal tunable filter, full tuning still fails to achieve simultaneous integration of multiple tunable functions, and there are still disadvantages of few tunable parameters, narrow tuning range, single cavity mode, unstable tuning, and the like.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a miniaturized substrate integrated waveguide fully tunable filter, which can adjust the center frequency by controlling the external loading voltage of the PIN diode, in order to overcome the drawbacks of the prior art; the adjustment of the transmission zero point of the broadband filter is controlled by adjusting the external loading voltage of the first variable capacitance diode to change the cross coupling; the adjustment of the bandwidth of the broadband filter is controlled by adjusting the external loading voltage of the second variable capacitance diode to change the inter-stage coupling; therefore, various parameter adjustments are fused together, the parameter adjustments are not mutually influenced and not interfered, the bandwidth stability is kept when the frequency and the transmission zero point are adjusted, the double-folding quarter-mode substrate integrated waveguide resonant cavity is adopted, the area of the waveguide resonant cavity is reduced by 93.5 percent compared with that of a full-mode resonant cavity, and the miniaturization is realized.
In order to solve the technical problem, the utility model discloses a technical scheme is: a miniaturized substrate integrated waveguide fully tunable filter is characterized in that: the metal through hole array penetrates through the edge of the middle metal layer from top to bottom to form a cascade resonant cavity, and the cascade resonant cavity is coupled by two double-folded quarter-mode substrate integrated waveguide resonant cavities through a coupling window of the middle metal layer; the upper dielectric layer is provided with a plurality of pairs of PIN diodes and a plurality of variable capacitance diodes, the cathodes of the PIN diodes are connected with the upper metal layer, the anodes of the PIN diodes are connected with the middle metal layer, and the PIN diodes are symmetrically distributed along the coupling windows of the middle metal layer respectively; the cathode of the variable capacitance diode is connected with the upper metal layer, the anode of the variable capacitance diode is connected with the middle metal layer, and the variable capacitance diodes comprise a first variable capacitance diode arranged at the top of the coupling window and at the corresponding position of the upper dielectric layer and a second variable capacitance diode arranged at the middle section of the coupling window and at the corresponding position of the upper dielectric layer.
The miniaturized substrate integrated waveguide fully-tunable filter is characterized in that: the double-folded quarter-mode substrate integrated waveguide resonant cavity is obtained by halving the full-mode resonant cavity twice along the equivalent magnetic wall and then folding twice along the length direction and the width direction.
The miniaturized substrate integrated waveguide fully-tunable filter is characterized in that: and a gap is formed above the coupling window of the middle metal layer.
The miniaturized substrate integrated waveguide fully-tunable filter is characterized in that: the size of the gap is adjustable.
The miniaturized substrate integrated waveguide fully-tunable filter is characterized in that: the gap is in the shape of an inverted U.
The miniaturized substrate integrated waveguide fully-tunable filter is characterized in that: two ends of the PIN diode and the two ends of the variable capacitance diode are respectively led out to the edge of the upper dielectric layer through a fine strip line, and the fine strip line is connected with a lead.
The miniaturized substrate integrated waveguide fully-tunable filter is characterized in that: the PIN diode is connected with the middle metal layer through a first metalized tuning post, the PIN diode is connected with the middle metal layer through a second metalized tuning post, a through hole for the first metalized tuning post and the second metalized tuning post to penetrate through is formed in the upper dielectric layer, and a gap for the first metalized tuning post to penetrate through is formed in the upper metal layer.
The miniaturized substrate integrated waveguide fully-tunable filter is characterized in that: the PIN diode is arranged in an area surrounded by the metal through hole array and the coupling window at the corresponding position of the upper dielectric layer.
The miniaturized substrate integrated waveguide fully-tunable filter is characterized in that: the number of the second varactor diodes is multiple.
The miniaturized substrate integrated waveguide fully-tunable filter is characterized in that: the number of the first varactor diodes is at least one.
Compared with the prior art, the utility model has the following advantage:
1. the utility model has the advantages of simple structure and reasonable design, realize and use convenient operation.
2. The utility model discloses a two dual folding quarter mould substrate integrated waveguide resonant cavity DFQMSIW cascade, dual folding quarter mould substrate integrated waveguide resonant cavity DFQMSIW reduce the area to 6.25%, have greatly reduced original full mould resonant cavity SIW's size, and can the equivalent realize original full mould resonant cavity SIW's function, satisfy the higher power of full adjustable filter and higher quality factor.
3. In the utility model, two ends of the PIN diode are respectively connected with the middle metal layer and the upper metal layer, when the PIN diode is communicated, the middle metal layer and the upper metal layer are mutually communicated to cause electromagnetic field disturbance at the position, thereby achieving the effect of adjusting frequency; and simultaneously the utility model discloses be provided with many to the PIN diode, through the control difference to the break-make combination of PIN diode realize central frequency's multiple change.
4. The utility model changes cross coupling to realize the change of transmission zero point by adjusting the external loading voltage of the first variable capacitance diode, wherein the transmission zero point is closer to the pass band as the external loading voltage of the first variable capacitance diode is smaller; the larger the external loading voltage of the first varactor diode is, the farther the transmission zero point is from the passband.
5. The utility model changes the inter-stage coupling to realize the bandwidth adjustment by adjusting the external loading voltage of the second variable capacitance diode, and the smaller the external loading voltage of the second variable capacitance diode is, the narrower the bandwidth is; the larger the external loading voltage of the second varactor diode is, the wider the bandwidth is.
6. The utility model discloses when adjusting frequency and transmission zero point, the external loading voltage through adjusting the second varactor comes dynamic change coupling coefficient, has kept the stability of bandwidth, excellent in use effect.
7. The utility model discloses well PIN diode and varactor quantity are adjustable, have avoided huge volume and great insertion loss that too much component caused, excellent in use effect.
In summary, the utility model realizes the adjustment of the center frequency by controlling the magnitude of the external loading voltage of the PIN diode; the adjustment of the transmission zero point of the broadband filter is controlled by adjusting the external loading voltage of the first variable capacitance diode to change the cross coupling; the adjustment of the bandwidth of the broadband filter is controlled by adjusting the external loading voltage of the second variable capacitance diode to change the inter-stage coupling; therefore, various parameter adjustments are fused together, the parameter adjustments are not mutually influenced and not interfered, the bandwidth stability is kept when the frequency and the transmission zero point are adjusted, the double-folding quarter-mode substrate integrated waveguide resonant cavity is adopted, the area of the waveguide resonant cavity is reduced by 93.5 percent compared with that of a full-mode resonant cavity, and the miniaturization is realized.
The technical solution of the present invention is further described in detail by the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a top view of fig. 1.
Fig. 3 is a schematic structural diagram of the intermediate metal layer of the present invention.
Fig. 4 is a side view of fig. 1.
Fig. 5 is a simulation diagram illustrating the influence of the change of the gap length on the interstage coupling effect of the present invention.
Fig. 6 is the simulation diagram of the influence of the external loading voltage of the varactor diode on the transmission zero point.
Fig. 7 is a simulation diagram of the influence of the change of the external loading voltage of the second varactor diode on the bandwidth.
Fig. 8 is a simulation diagram of the influence of the change of the external loading voltage of the PIN diode on the center frequency.
Description of reference numerals:
1-upper dielectric layer; 2-upper metal layer; 3-an intermediate dielectric layer;
4-intermediate metal layer; 41-coupling window; 5-lower dielectric layer;
6-lower metal layer; 7-metal via array; 8-a through hole;
91 — a first varactor; 92-a second varactor; 10-PIN diode;
11-a gap; 12-fine band lines; 13-a first metallized tuning post;
14-second metalized tuning post.
Detailed Description
The method of the present invention will be described in further detail with reference to the accompanying drawings and embodiments of the present invention.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present invention will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are, for example, capable of operation in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Spatially relative terms, such as "above … …," "above … …," "above … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary term "above … …" can include both an orientation of "above … …" and "below … …". The device may be otherwise variously oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
As shown in fig. 1 to 4, the present invention includes an upper dielectric layer 1, an upper metal layer 2, a middle dielectric layer 3, a middle metal layer 4, a lower dielectric layer 5 and a lower metal layer 6 stacked in sequence from top to bottom.
In practical use, the upper metal layer 2 is plated and etched on the lower surface of the upper dielectric layer 1, the middle metal layer 4 is plated and etched on the lower surface of the middle dielectric layer 3, and the lower metal layer 6 is plated and etched on the lower surface of the lower dielectric layer 5. The thicknesses of the upper dielectric layer 1, the middle dielectric layer 3 and the lower dielectric layer 5 are all 1 mm. The metal via array 7 runs through from the top upper dielectric layer 1 to the bottom lower metal layer 6. The metal via array 7 is disposed along the edge of the middle metal layer 4, and the metal via array 7 is in an inverted U shape, and the opening thereof faces the coupling window 41 of the middle metal layer 4.
The metal through hole array 7 penetrates through the edge of the middle metal layer 4 from top to bottom to form a cascade resonant cavity, and the cascade resonant cavity is formed by two double-folded quarter-mode substrate integrated waveguide resonant cavities which are coupled through a coupling window 41 of the middle metal layer 4.
When the double-folding quarter-mode substrate integrated waveguide resonant cavity QMSIW is actually used, the full-mode resonant cavity SIW is divided into two parts along the symmetrical position of an electric field according to the distribution of the electromagnetic field in the full-mode resonant cavity SIW to obtain a half-mode substrate integrated waveguide resonant cavity HMSIW, the half-mode substrate integrated waveguide resonant cavity HMSIW is divided into two parts along an equivalent magnetic wall to obtain a quarter-mode substrate integrated waveguide resonant cavity QMSIW, and the quarter-mode substrate integrated waveguide resonant cavity QMSIW is folded twice along the length direction and the width direction to obtain the double-folding quarter-mode substrate integrated waveguide resonant cavity QMSIW. Compared with the full-mode resonant cavity SIW, the double-folded quarter-mode substrate integrated waveguide resonant cavity DFQMSIW reduces the area to 6.25%, greatly reduces the size of the original full-mode resonant cavity SIW, can equivalently realize the function of the original full-mode resonant cavity SIW, and has good use effect.
The upper dielectric layer 1 is provided with a plurality of pairs of PIN diodes 10 and a plurality of variable capacitance diodes, the cathodes of the PIN diodes 10 are connected with the upper metal layer 2, the anodes of the PIN diodes 10 are connected with the middle metal layer 4, and the PIN diodes 10 are symmetrically arranged along the coupling windows 41 of the middle metal layer 4 respectively.
In practical use, the PIN diode 10 is arranged in an area surrounded by the metal through hole array 7 and the coupling window 41 on the upper dielectric layer 1 at the corresponding position of the upper dielectric layer 1. And a plurality of pairs of PIN diodes 10 are respectively symmetrically arranged along the coupling windows 41 of the middle metal layer 4. The coupling window 41 is a regular rectangular gap, and the length direction thereof is parallel to the opening direction of the metal via array 7, and the opening direction of the coupling window 41 is the same as the opening direction of the metal via array 7.
In practical use, when the PIN diode 10 is connected, the upper metal layer 2 and the middle metal layer 4 are connected with each other through the through hole 8, so that electromagnetic field disturbance at the position is caused, and the effect of adjusting the frequency is achieved. If there are n pairs of PIN diodes 10, and n pairs of PIN diodes 10 are not turned on or off at the same time, 2 can be implemented by controlling the on-off combination of n pairs of PIN diodes 10nA change in frequency.
As shown in fig. 1, in the present embodiment, the PIN diode 10 has five pairs including a first pair consisting of a diode a1 and a diode a2, a second pair consisting of a diode B1 and a diode B2, a third pair consisting of a diode C1 and a diode C2, a fourth pair consisting of a diode D1 and a diode D2, and a fifth pair consisting of a diode E1 and a diode E2. Five pairs of PIN diodes 10 are respectively arranged at different positions of the upper dielectric layer 1, but each pair of PIN diodes 10 is symmetrical along the longitudinal axis of the coupling window 41, wherein a diode A1 and a diode A2 are respectively arranged at two corner positions of the metal through hole array 7, a diode B1 and a diode B2 are respectively arranged at two sides of the top of the coupling window 41, a diode C1 and a diode C2 are respectively arranged at two sides of the inside of the opening of the metal through hole array 7, a diode D1 and a diode D2 are respectively arranged at two sides of the middle section of the coupling window 41, and a diode E1 and a diode E2 are respectively arranged at two sides of the bottom of the coupling window 41. In this embodiment, five pairs of PIN diodes 10 can be respectively controlled to be turned on and off through conducting wires, and the five pairs of PIN diodes 10 are differentTime on-off, therefore, through the on-off combination of five pairs of PIN diodes 10, 2 can be realized5The frequency change has the effect of adjusting the frequency.
As shown in fig. 8, a simulation curve is obtained by performing simulation calculation through three-dimensional electromagnetic simulation software, a measurement curve is obtained by performing measurement after processing, the simulation curve and the measurement curve are superimposed to obtain a filter transmission response curve as shown in fig. 8, the abscissa represents the frequency of the fully tunable filter, the ordinate represents the transmission characteristic, and as can be seen from fig. 8, the center frequency of the pass band changes with the magnitude of the external loading voltage of the PIN diode 10. The center frequency is changed into 1.1GHz, 1.29GHz, 1.48GHz, 1.6GHz and 1.9GHz from top to bottom in sequence. The adjustment of the fully tunable filter in the frequency range of 1.1GHz to 1.9GHz is realized by adjusting the magnitude of the external loading voltage of the PIN diode 10.
The cathode of the variable capacitance diode is connected with the upper metal layer 2, the anode of the variable capacitance diode is connected with the middle metal layer 4, and the variable capacitance diodes comprise a first variable capacitance diode 91 arranged at the top of the coupling window 41 at a position corresponding to the upper dielectric layer 1 and a second variable capacitance diode 92 arranged at the middle section of the coupling window 41 at a position corresponding to the upper dielectric layer 1.
In practical use, the first varactor 91 is used for adjusting cross coupling to realize transmission zero point change, wherein the transmission zero point is closer to the passband as the external loading voltage of the first varactor 91 is smaller; the larger the external loading voltage of the first varactor 91, the farther away the transmission zero is from the passband.
As shown in fig. 6, the abscissa indicates the bandwidth of the fully tunable filter, the ordinate indicates the return loss, V1 indicates the external loading voltage of the first varactor 91, V2 indicates the external loading voltage of the first second varactor 92, and V3 indicates the external loading voltage of the second varactor 92. As shown in fig. 6, when the voltage V1 is 3.8V, the transmission zero point is at 1.54 GHz; when the voltage V1 is 2.8V, the transmission zero point is positioned at 1.45 GHz; when the voltage V1 is 2.1V, the transmission zero point is at 1.41 GHz. In summary, the smaller the voltage V1, the closer the transmission zero is to the pass band, so the transmission zero can be adjusted by changing the external loading voltage of the first varactor 91.
It should be noted that, while the external loading voltage of the first varactor 91 is reduced, the external loading voltage value of the second varactor 92 is increased, so that the bandwidth stability is maintained, and the using effect is good. As shown in fig. 6, increasing the voltages V2 and V3 while decreasing the voltage V1 maintains the stability of the bandwidth.
In this embodiment, the number of the first varactor diodes 91 is 1, and the number of the second varactor diodes 92 is 2. The two second varactor diodes 92 are respectively arranged at the middle section part of the coupling window 41 from top to bottom and are used for adjusting the inter-stage coupling to realize bandwidth adjustment, and the smaller the external loading voltage of the second varactor diodes 92 is, the narrower the bandwidth is; the larger the external loading voltage of the second varactor 92, the wider the bandwidth.
For the adjustment of the bandwidth, it can be realized by only adjusting the external loading voltage of the second varactor 92, as shown in fig. 7, the abscissa represents the bandwidth of the fully tunable filter, and the ordinate represents the transmission characteristic, in this embodiment, V2 and V3 have the same size, and when the external loading voltages V2 and V3 both decrease from 11.5V to 5.6V, the absolute bandwidth decreases from 200MHz to 120 MHz.
In this embodiment, a gap 11 is formed above the coupling window 41 of the middle metal layer 4. The gap 11 is in an inverted U shape.
In practical use, the cascaded resonators are coupled by two double-folded quarter-mode substrate integrated waveguide resonators through the coupling window 41 and the slot 11 of the middle metal layer 4. The width of the coupling window 41 and the length of the slot 11 will together determine the inter-stage coupling, which increases with increasing width of the coupling window 41 and increases with increasing length of the slot 11. Because a plurality of PIN diodes 10 and varactor diodes are loaded at the position of the coupling window 41, the width adjustment of the coupling window 41 is complex, and the gap 11 is arranged to cooperate with the coupling window 41 to play a role of auxiliary coupling, so that the interstage coupling adjustment is flexible.
As shown in FIG. 5, the abscissa represents the length w of the slot 11 and the ordinate represents the primary coupling K of the cascaded resonators12Interstage coupling K12With the length w of the slot 11And increased by an increase. The transverse length of the inverted U-shaped slit 11 is w, and the longitudinal length thereof is w1The size of the gap 11 can be adjusted according to the actual situation, in this embodiment, w1The width of the slot 11 is 0.1mm, 1 mm.
In this embodiment, two ends of the PIN diode 10 and the varactor are led out to the edge of the upper dielectric layer 1 through a fine strip line 12, and the fine strip line 12 is connected with a conducting wire. In practical use, external loading voltage is loaded on the PIN diode 10 and the variable capacitance diode through the conducting wire, so that the control is simple and convenient.
In this embodiment, the PIN diode 10 is connected to the middle metal layer 4 through the first metalized tuning post 13, the PIN diode 10 is connected to the upper metal layer 2 through the second metalized tuning post 14, the upper dielectric layer 1 is provided with a through hole 8 through which the first metalized tuning post 13 and the second metalized tuning post 14 pass, and the upper metal layer 2 is provided with a gap through which the first metalized tuning post 13 passes.
In this embodiment, the upper dielectric layer 1 is made of FR4-xpoxy material layer. The middle dielectric layer 3 and the lower dielectric layer 5 are made of Rogers RT/duroid 588 material layers. The varactor is manufactured by Skyworks company and produced by SMV2020-079 series.
The aforesaid, only be the embodiment of the utility model discloses an it is not right the utility model discloses do any restriction, all according to the utility model discloses the technical entity all still belongs to any simple modification, change and the equivalent structure change of doing above embodiment the utility model discloses technical scheme's within the scope of protection.
Claims (10)
1. A miniaturized substrate integrated waveguide fully tunable filter is characterized in that: comprises an upper dielectric layer (1), an upper metal layer (2), a middle dielectric layer (3), a middle metal layer (4), a lower dielectric layer (5) and a lower metal layer (6) which are sequentially laminated from top to bottom, a metal through hole array (7) penetrates through the edge of the middle metal layer (4) from top to bottom to form a cascade resonant cavity, the cascade resonant cavity is formed by coupling two double-folded quarter-mode substrate integrated waveguide resonant cavities through a coupling window (41) of the middle metal layer (4),
a plurality of pairs of PIN diodes (10) and a plurality of variable capacitance diodes are arranged on the upper dielectric layer (1),
the cathode of the PIN diode (10) is connected with the upper metal layer (2), the anode of the PIN diode (10) is connected with the middle metal layer (4), and the PIN diodes (10) are symmetrically distributed along the coupling window (41) of the middle metal layer (4);
the cathode of each variable capacitance diode is connected with the upper metal layer (2), the anode of each variable capacitance diode is connected with the middle metal layer (4), and the variable capacitance diodes comprise a first variable capacitance diode (91) which is arranged at the top of the coupling window (41) and at the corresponding position of the upper dielectric layer (1) and a second variable capacitance diode (92) which is arranged at the middle section of the coupling window (41) and at the corresponding position of the upper dielectric layer (1).
2. A miniaturized substrate integrated waveguide fully tunable filter according to claim 1, characterized in that: the double-folded quarter-mode substrate integrated waveguide resonant cavity is obtained by halving the full-mode resonant cavity twice along the equivalent magnetic wall and then folding twice along the length direction and the width direction.
3. A miniaturized substrate integrated waveguide fully tunable filter according to claim 1, characterized in that: and a gap (11) is formed above the coupling window (41) of the middle metal layer (4).
4. A miniaturized substrate integrated waveguide fully tunable filter according to claim 3, characterized in that: the size of the gap (11) is adjustable.
5. A miniaturized substrate integrated waveguide fully tunable filter according to claim 3, characterized in that: the gap (11) is in an inverted U shape.
6. A miniaturized substrate integrated waveguide fully tunable filter according to claim 1, characterized in that: two ends of the PIN diode (10) and two ends of the variable capacitance diode are respectively led out to the edge of the upper dielectric layer (1) through a fine strip line (12), and the fine strip line (12) is connected with a lead.
7. A miniaturized substrate integrated waveguide fully tunable filter according to claim 1, characterized in that: the PIN diode (10) is connected with the middle metal layer (4) through the first metalized tuning post (13), the PIN diode (10) is connected with the middle metal layer (4) through the second metalized tuning post (14), a through hole (8) for the first metalized tuning post (13) and the second metalized tuning post (14) to penetrate through is formed in the upper dielectric layer (1), and a gap for the first metalized tuning post (13) to penetrate through is formed in the upper metal layer (2).
8. A miniaturized substrate integrated waveguide fully tunable filter according to claim 1, characterized in that: the PIN diode (10) is arranged in an area surrounded by the metal through hole array (7) and the coupling window (41) at the corresponding position of the upper dielectric layer (1).
9. A miniaturized substrate integrated waveguide fully tunable filter according to claim 1, characterized in that: the number of the second varactor diodes (92) is plural.
10. A miniaturized substrate integrated waveguide fully tunable filter according to claim 1, characterized in that: the number of the first varactor diodes (91) is at least one.
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| CN114865255A (en) * | 2022-07-07 | 2022-08-05 | 微网优联科技(成都)有限公司 | Half-mode substrate integrated waveguide filter |
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| CN114865255A (en) * | 2022-07-07 | 2022-08-05 | 微网优联科技(成都)有限公司 | Half-mode substrate integrated waveguide filter |
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