CN217983621U - SIW filter capable of independently regulating and controlling frequency and amplitude based on CT topology - Google Patents
SIW filter capable of independently regulating and controlling frequency and amplitude based on CT topology Download PDFInfo
- Publication number
- CN217983621U CN217983621U CN202222246059.1U CN202222246059U CN217983621U CN 217983621 U CN217983621 U CN 217983621U CN 202222246059 U CN202222246059 U CN 202222246059U CN 217983621 U CN217983621 U CN 217983621U
- Authority
- CN
- China
- Prior art keywords
- metal layer
- metalized
- surface metal
- resonant cavities
- holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
A frequency and amplitude independent adjustable SIW filter based on CT topology comprises a top metal layer, a dielectric substrate and a bottom metal layer which are sequentially arranged from top to bottom; a metalized through hole array is vertically arranged on the medium substrate in a penetrating manner, the metalized through holes are communicated with the top surface metal layer and the bottom surface metal layer, three resonant cavities distributed in a CT topological form are formed through the metalized through hole array, the centers of the three resonant cavities are respectively provided with a perturbation metalized through hole, the three resonant cavities are mutually coupled through an inductive coupling window, and the inductive coupling window consists of the metalized through holes; three annular grooves are formed in the top metal layer corresponding to the centers of the three resonant cavities, and an adjustable variable capacitance tube group is arranged on the top metal layer; an input/output feed port is arranged on the bottom surface metal layer, and three annular graphene layers are arranged at positions of the bottom surface metal layer corresponding to the three annular grooves. The utility model discloses the frequency and the transmission amplitude of SIW wave filter have been realized simultaneously and have independently been regulated and controlled.
Description
Technical Field
The utility model belongs to the technical field of the microwave device, concretely relates to SIW wave filter can be independently regulated and control to frequency and range based on CT (cascade type triplet) topology.
Background
Emerging wireless communication and radar systems have increasingly high requirements for tunable Radio Frequency (RF) front ends, which are capable of reacting to different spectrum environments. Due to the dynamic frequency tuning function, the microwave reconfigurable filter is an important component of a future multifunctional radio frequency front end. In the numerous studies on reconfigurable filters, coaxial SIW resonators are always the first choice for tunable filters due to their more compact structure, continuous tuning range and low cost manufacturing process. Tunable microwave attenuators are also important components in various communication systems for adjusting signals to different levels. In the microwave band, graphene-based tunable attenuators are of great interest due to the unique electrically tunable omnidirectional resistance of graphene.
With the development of modern microwave devices, the versatility and high integration degree are more and more emphasized by people. The versatility of the device is an effective way to reduce circuit size and enhance versatility, with band pass filters and attenuators being widely used in some specific applications, including automatic level or gain control circuits in communication and radar systems. The existing microwave devices focus on multiple functions or single reconfigurable, but cannot realize simultaneous and independent tuning of filtering and attenuation response.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to the problem among the above-mentioned prior art, provide a frequency and range independently can regulate and control the SIW wave filter based on CT topology, realize having the many restructuring radio frequency devices of tunable filtering and decay function simultaneously.
In order to achieve the above object, the present invention provides the following technical solutions:
a frequency and amplitude independent adjustable SIW filter based on CT topology comprises a top metal layer, a dielectric substrate and a bottom metal layer which are sequentially arranged from top to bottom; the medium substrate is vertically provided with a plurality of metalized through holes in a penetrating manner to form a metalized through hole array, the metalized through holes are communicated with the top metal layer and the bottom metal layer, three resonant cavities distributed in a CT topological form are formed through the metalized through hole array, the centers of the three resonant cavities are respectively provided with a perturbation metalized through hole, every two three resonant cavities are mutually coupled through an inductive coupling window, the inductive coupling window consists of the metalized through holes, and the metalized through holes of the perturbation metalized through holes and the inductive coupling window penetrate through the medium substrate and are connected with the top metal layer and the bottom metal layer; the top metal layer is provided with three annular grooves corresponding to the centers of the three resonant cavities, an adjustable variable capacitance tube group is arranged on the top metal layer, one end of the adjustable variable capacitance tube group is connected with the top metal layer on the inner side of the annular groove and is connected to the bottom metal layer through a perturbation metallization through hole, and the other end of the adjustable variable capacitance tube group is connected with the top metal layer on the outer side of the annular groove; and an input/output feed port is arranged on the bottom surface metal layer, and three annular graphene layers are arranged at positions of the bottom surface metal layer corresponding to the three annular grooves.
As a preferable scheme, the three resonant cavities distributed in the CT topology are three intersected circular cavities or polygonal cavities, the three resonant cavities have the same shape and are centrosymmetric, and two adjacent resonant cavities share a part of cavity walls.
As a preferred scheme, two input/output feed ports are arranged along a straight line, each input/output feed port comprises a grounded coplanar waveguide and arc-shaped slot lines connected with the grounded coplanar waveguide, the arc-shaped slot lines of the two input/output feed ports surround the outside of the annular graphene layers of the two resonant cavities, the grounded coplanar waveguides lead the arc-shaped slot lines to the edges of the two sides of the bottom metal layer, the dielectric substrate is opened at the position where the resonant cavities correspondingly pass through the grounded coplanar waveguides, and metallized through holes are arranged on the two sides of the grounded coplanar waveguides and connected with the metallized through hole array.
As a preferred scheme, the input and output feed ports are led out from the middle points of the cavity side walls of the two resonant cavities, and the structures of the two input and output feed ports are in mirror symmetry; the arc-shaped groove line is formed by continuous curves or by straight splicing.
Preferably, the inductive coupling window is formed by a cylindrical, square or rectangular metalized through hole.
Preferably, the perturbation metalized through hole is a cylindrical, cubic or rectangular metalized through hole.
Preferably, the annular groove is circular or polygonal, and the adjustable varactor group is composed of a plurality of identical varactors.
As a preferable scheme, the annular graphene layer is circular or polygonal, and the shape of the annular graphene layer is the same as that of the annular groove.
As a preferable scheme, the annular graphene layer is disposed in the bottom surface metal layer, and has a thickness the same as that of the bottom surface metal layer.
As a preferable scheme, the capacitance value of the adjustable varactor group is changed, the sheet resistance of the annular graphene layer is kept unchanged, and the central frequency of the filter is controlled to move, so that the transmission amplitude at the same central frequency is unchanged;
and the capacitance value of the adjustable varactor group is kept unchanged, the sheet resistance of the annular graphene layer is kept changed, the central frequency of the filter is controlled to be unchanged, and then the transmission amplitude under the central frequency is changed.
Compared with the prior art, the utility model discloses following beneficial effect has at least:
by arranging the adjustable varactor group on the top surface metal layer and the annular graphene layer on the bottom surface metal layer, the SIW filter with independently adjustable frequency and transmission amplitude is realized, and the filter has more compact size and more abundant functions. The utility model discloses frequency and transmission range are aloneIn the immediately adjustable SIW filter structure, three resonant cavities distributed in a CT (cascaded triplet state) topological form are formed on a dielectric substrate through a metalized through hole array, and a transmission zero is introduced at the high end of a filter passband under the condition of not additionally using a cross coupling structure, so that the selectivity and out-of-band rejection of the filter are improved. The utility model discloses SIW wave filter that frequency and transmission amplitude can be independently regulated and control only changes capacitance value C of adjustable varactor group to the regulation and control of center frequency v1 Can be realized, and the regulation and control of the transmission amplitude only change the sheet resistance R of the ring-shaped graphene layer g The method can be realized, and the regulation and control mode is simple and easy to operate.
Drawings
FIG. 1 is a three-dimensional structure diagram of a SIW filter with independently controllable frequency and amplitude based on CT topology;
FIG. 2 is a top view of a top metal layer structure according to an embodiment of the present invention;
FIG. 3 is a top view of a bottom metal layer structure according to an embodiment of the present invention;
fig. 4 is a graph of the return loss | S11| simulation result of the filter according to the embodiment of the present invention;
fig. 5 is a graph of the insertion loss | S21| simulation result of the filter according to the embodiment of the present invention;
fig. 6 is a diagram of the simulation results of the insertion loss | S21| of the filter with transmission tunability at three center frequencies according to an embodiment of the present invention;
in the drawings: 1-top metal layer; 2-a dielectric substrate; 3-bottom metal layer; 4-an array of metallized vias; 5-an adjustable varactor group; 6-a ring-shaped graphene layer; 7-a first resonant cavity; 8-a second resonant cavity; 9-a third resonant cavity; 10-perturbation metallization of through holes; 11-an annular groove; 12-input-output feed port; 13-a grounded coplanar waveguide; 14-arc slot line; 15-inductively coupled window.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples.
Referring to fig. 1, an embodiment of the present invention provides a SIW filter capable of independently regulating and controlling frequency and amplitude based on CT topology, including a top metal layer 1, a dielectric substrate 2 and a bottom metal layer 3, which are sequentially disposed from top to bottom.
The embodiment of the present invention adopts three circular resonant cavities, the central connecting line of the three resonant cavities forms an equilateral triangle, the centers of the first resonant cavity 7, the second resonant cavity 8 and the third resonant cavity 9 are respectively provided with a perturbation metalized through hole 10, the three resonant cavities are mutually coupled through a three inductive coupling window 15, the inductive coupling window 15 is composed of metalized through holes, and the metalized through holes of the perturbation metalized through hole 10 and the inductive coupling window 15 penetrate through the medium substrate 2 and are connected with the top surface metal layer 1 and the bottom surface metal layer 3.
In one possible embodiment, the inductive coupling window 15 is composed of cylindrical, cubic or rectangular metalized through holes. The perturbed metallized via 10 may likewise be a cylindrical, cubic or rectangular parallelepiped metallized via.
As shown in fig. 2, three annular grooves 11 are provided at positions of the top metal layer 1 corresponding to centers of the three resonant cavities, the annular grooves 11 may be circular or polygonal, in this embodiment, circular, the three annular grooves 11 are respectively located at middle portions of the first resonant cavity 7, the second resonant cavity 8 and the third resonant cavity 9, and the perturbation metal through hole 10 on each resonant cavity is concentric with the annular groove 11. An adjustable variable capacitance tube group 5 is arranged on the top surface metal layer 1, one end of the adjustable variable capacitance tube group 5 is connected with the top surface metal layer 1 on the inner side of the annular groove 11 and is connected with the bottom surface metal layer 3 through a perturbation metallization through hole 10, and the other end of the adjustable variable capacitance tube group 5 is connected with the top surface metal layer 1 on the outer side of the annular groove 11; in one possible implementation, the variable varactor group 5 is composed of a plurality of varactors of the same type and the same size, wherein the varactors of this embodiment are of the SMV1405 type.
As shown in fig. 3, the input/output power feeding port 12 is provided on the bottom metal layer 3, and three annular graphene layers 6 are provided on the bottom metal layer 3 at positions corresponding to the three annular grooves 11. The two input and output feed ports 12 are arranged along a straight line, the input and output feed ports 12 comprise grounding coplanar waveguides 13 and connected arc-shaped slot lines 14, the arc-shaped slot lines 14 of the two input and output feed ports 12 surround the outside of the annular graphene layers 6 of the two resonant cavities, the grounding coplanar waveguides 13 lead the arc-shaped slot lines 14 to the edges of the two sides of the bottom metal layer 3, the dielectric substrate 2 is opened at the position where the resonant cavities correspondingly pass through the grounding coplanar waveguides 13, and metalized through holes are arranged on the two sides of the grounding coplanar waveguides 13 and connected with the metalized through hole array 4.
In a possible implementation mode, the input and output feed ports 12 are led out from the middle points of the cavity side walls of the two resonant cavities, and the structures of the two input and output feed ports 12 are in left-right mirror symmetry. The characteristic impedance of the grounded coplanar waveguide 13 is 50 ohms, the arc-shaped slot line 14 is in the shape of an arc with an angle theta, theta is larger than or equal to 0 degree and smaller than or equal to 180 degrees, and the arc-shaped slot line 14 is formed by continuous curves or straight splicing. The annular graphene layer 6 is circular or polygonal, the shape of the annular graphene layer 6 is the same as that of the annular groove 11, the annular graphene layer 6 is arranged in the bottom surface metal layer 3, and the thickness of the annular graphene layer is the same as that of the bottom surface metal layer 3.
The utility model discloses SIW filter that frequency and range can be regulated and control independently based on CT topology changes the capacitance value of adjustable varactor group 5, and the sheet resistance of annular graphite alkene layer 6 keeps unchanged, controls the central frequency of filter and moves, then the transmission range under the same central frequency is unchanged; the capacitance value of the adjustable varactor group 5 is kept unchanged, the sheet resistance of the annular graphene layer 6 is kept changed, the center frequency of the control filter is unchanged, and then the transmission amplitude at the center frequency is changed.
Referring to fig. 2 and 3, the dielectric substrate 2 of the embodiment of the present invention is an F4bME substrate with a thickness of 5mm, and has a relative dielectric constant ∈ thereof r =3.55, loss tangent tan δ =0.0002, thickness 5mm.
Metalizing the metal of the via array 4The diameter of the plated through hole is 1mm, the diameter of the metalized through hole forming the inductive coupling window 15 is 0.8mm, and the diameter of the perturbation metalized through hole 10 is 0.5mm. The geometrical parameters in fig. 2 and 3 are: r =13, d1=5, d2=5.8, d3=7, d4=8.5,l 1 ＝7.5，l 2 ＝l 3 ＝12.2，l 4 ＝16，R cpw ＝4.5，l CPW ＝8.8，w cpw ＝0.3，θ＝90.5°。
It can be seen from combining fig. 4 to fig. 6, the utility model discloses SIW filter can be independently regulated and control to frequency and range based on CT topology, adopt the center frequency that the adjustable varactor group 5 of top surface metal level 1 loading at SIW filter adjusted the filter, through the transmission range that the annular graphite alkene layer 6 of loading comes control filter in the 3 ring channels of bottom surface metal level at SIW filter to the resonant cavity adopts CT topology to introduce a transmission zero point at the high-end of passband of filter, has improved the outband rejection characteristic. The utility model discloses a SIW wave filter only changes capacitance value C of adjustable varactor group 5 to center frequency's regulation and control v1 The method can be realized, and the regulation and control of the transmission amplitude only change the sheet resistance R of the annular graphene layer 6 g Can be realized, and has simple regulation and control mode and easy operation.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present application and are intended to be included within the scope of the present application.
Claims (9)
1. A SIW filter with independently adjustable and controllable frequency and amplitude based on CT topology is characterized in that: the dielectric substrate comprises a top surface metal layer (1), a dielectric substrate (2) and a bottom surface metal layer (3) which are arranged from top to bottom in sequence; the medium substrate (2) is vertically provided with a plurality of metalized through holes in a penetrating manner to form a metalized through hole array (4), the metalized through holes are communicated with the top surface metal layer (1) and the bottom surface metal layer (3), three resonant cavities distributed in a CT topological form are formed through the metalized through hole array (4), the centers of the three resonant cavities are respectively provided with a perturbation metalized through hole (10), every two three resonant cavities are mutually coupled through an inductive coupling window (15), the inductive coupling window (15) is composed of the metalized through holes, and the metalized through holes of the perturbation metalized through holes (10) and the inductive coupling window (15) penetrate through the medium substrate (2) and are connected with the top surface metal layer (1) and the bottom surface metal layer (3); the top surface metal layer (1) is provided with three annular grooves (11) corresponding to the centers of the three resonant cavities, an adjustable variable capacitance tube group (5) is arranged on the top surface metal layer (1), one end of the adjustable variable capacitance tube group (5) is connected with the top surface metal layer (1) on the inner side of the annular groove (11) and is connected with the bottom surface metal layer (3) through a perturbation metallization through hole (10), and the other end of the adjustable variable capacitance tube group is connected with the top surface metal layer (1) on the outer side of the annular groove (11); an input/output feed port (12) is arranged on the bottom surface metal layer (3), and three annular graphene layers (6) are arranged at positions of the bottom surface metal layer (3) corresponding to the three annular grooves (11).
2. The CT topology based frequency and amplitude independently tunable SIW filter of claim 1, wherein: the three resonant cavities distributed in the CT topological form are three intersected circular cavities or multi-edge cavities, the three resonant cavities are identical in shape and are centrosymmetric, and a part of cavity wall is shared between every two adjacent resonant cavities.
3. The CT topology based frequency and amplitude independently tunable SIW filter of claim 2, wherein: the two input and output feed ports (12) are arranged along a straight line, the input and output feed ports (12) comprise grounding coplanar waveguides (13) and arc-shaped slot lines (14) which are connected with each other, the arc-shaped slot lines (14) of the two input and output feed ports (12) surround the outer parts of the annular graphene layers (6) of the two resonant cavities, the grounding coplanar waveguides (13) lead the arc-shaped slot lines (14) to the edges of the two sides of the bottom metal layer (3), the dielectric substrate (2) is opened at the positions, corresponding to the resonant cavities, of the grounding coplanar waveguides (13), and metallized through holes are arranged on the two sides of the grounding coplanar waveguides (13) and connected with the metallized through hole array (4).
4. The CT topology based frequency and amplitude independently tunable SIW filter of claim 3, wherein: the input and output feed ports (12) are led out from the middle points of the side walls of the two resonant cavities, and the structures of the two input and output feed ports (12) are in mirror symmetry; the arc-shaped groove line (14) is formed by continuous curves or straight splicing.
5. The CT topology based frequency and amplitude independently tunable SIW filter of claim 1, wherein: the inductive coupling window (15) is composed of a cylindrical, cubic or rectangular metalized through hole.
6. The CT topology based frequency and amplitude independently tunable SIW filter of claim 1, wherein: the perturbation metalized through holes (10) are cylindrical, cubic or cuboid metalized through holes.
7. The CT topology based frequency and amplitude independently tunable SIW filter of claim 1, wherein: the annular groove (11) is circular or polygonal, and the adjustable variable capacitance tube group (5) is composed of a plurality of same variable capacitance tubes.
8. The CT topology based frequency and amplitude independently tunable SIW filter of claim 7, wherein: the annular graphene layer (6) is circular or polygonal, and the shape of the annular graphene layer (6) is the same as that of the annular groove (11).
9. The CT topology based frequency and amplitude independently tunable SIW filter of claim 1, wherein: the annular graphene layer (6) is arranged in the bottom surface metal layer (3) and is the same as the bottom surface metal layer (3) in thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222246059.1U CN217983621U (en) | 2022-08-25 | 2022-08-25 | SIW filter capable of independently regulating and controlling frequency and amplitude based on CT topology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222246059.1U CN217983621U (en) | 2022-08-25 | 2022-08-25 | SIW filter capable of independently regulating and controlling frequency and amplitude based on CT topology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217983621U true CN217983621U (en) | 2022-12-06 |
Family
ID=84259524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222246059.1U Active CN217983621U (en) | 2022-08-25 | 2022-08-25 | SIW filter capable of independently regulating and controlling frequency and amplitude based on CT topology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217983621U (en) |
-
2022
- 2022-08-25 CN CN202222246059.1U patent/CN217983621U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108808190B (en) | Electromagnetic two-dimensional reconfigurable filter with adjustable frequency bandwidth | |
| CN109462000B (en) | Multi-layer substrate integrated waveguide third-order filtering power divider | |
| CN110797613B (en) | Dielectric waveguide filter with ten-order and six-notch | |
| CN113644449B (en) | Broadband reconfigurable frequency selective surface based on single-sided loading PIN diode | |
| CN112563702B (en) | Miniaturized dual-mode filter based on HMSIW cavity and zero point adjusting method | |
| CN109473756B (en) | kinds of fully reconfigurable differential filter | |
| CN101694898A (en) | Bimodule annular resonant cavity band-pass filter with direct feed planar structure | |
| CN107425250B (en) | Planar wide-stop-band double-frequency filter | |
| CN109830789B (en) | Broadband band-pass filter based on folded substrate integrated waveguide and complementary split ring resonator | |
| US5426404A (en) | Electrical circuit using low volume multilayer transmission line devices | |
| WO1997002618A1 (en) | Multi-frequency ceramic block filter with resonators in different planes | |
| CN108923104B (en) | High-selectivity substrate integrated gap waveguide band-pass filter | |
| CN217983621U (en) | SIW filter capable of independently regulating and controlling frequency and amplitude based on CT topology | |
| CN110429362B (en) | Reconfigurable filter based on T-shaped resonator | |
| CN115275547A (en) | Frequency and amplitude independent adjustable substrate integrated waveguide filter | |
| CN109301414B (en) | Circular substrate integrated waveguide band-pass filter | |
| CN115275548A (en) | SIW filter capable of independently regulating and controlling frequency and amplitude based on CT topology | |
| CN210015936U (en) | Double-broadband band-pass filter with multilayer broadside coupling structure | |
| CN218039769U (en) | Frequency and amplitude independent adjustable substrate integrated waveguide filter | |
| CN209913004U (en) | Wide stop band microwave filter based on coplanar waveguide | |
| CN108493529B (en) | Double frequency filter | |
| CN106058391A (en) | Novel coupling network based planar CQ diplexer | |
| CN221057647U (en) | Multi-capacitive loading-based miniaturized multimode patch resonator and filter | |
| CN218827755U (en) | High-selectivity planar dual-cavity dual-mode patch filter | |
| CN113611993B (en) | High-selectivity wide-stop-band folded substrate integrated waveguide dual-mode filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |