CN113644449B - Broadband reconfigurable frequency selective surface based on single-sided loading PIN diode - Google Patents
Broadband reconfigurable frequency selective surface based on single-sided loading PIN diode Download PDFInfo
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- CN113644449B CN113644449B CN202110754101.8A CN202110754101A CN113644449B CN 113644449 B CN113644449 B CN 113644449B CN 202110754101 A CN202110754101 A CN 202110754101A CN 113644449 B CN113644449 B CN 113644449B
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- 239000002184 metal Substances 0.000 claims abstract description 96
- 229910052751 metal Inorganic materials 0.000 claims abstract description 96
- 238000005530 etching Methods 0.000 claims abstract description 3
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000022131 cell cycle Effects 0.000 claims description 2
- 230000010287 polarization Effects 0.000 abstract description 10
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 230000009977 dual effect Effects 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 11
- 230000000737 periodic effect Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 5
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000009812 interlayer coupling reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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Abstract
The invention discloses a broadband reconfigurable frequency selective surface based on a single-sided loading PIN diode, which comprises a dielectric plate and metal units on the upper surface and the lower surface of the dielectric plate; the first metal unit on the upper surface of the dielectric plate is of a double-square slit ring structure, each side of the square ring metal patch on the outermost layer is disconnected from the middle and connected through a PIN diode, and the second metal unit on the lower surface of the dielectric plate is formed by etching a rectangular groove on each side of the square ring metal patch. The transmission and reflection bandwidths of the invention in different polarization modes and different incidence angles can reach 4GHz at-2 dB, and the invention has the advantages of dual polarization, wide band and insensitivity to incidence angles, and can be used in the fields of radar, ultra-wideband antenna and the like.
Description
Technical Field
The invention belongs to the field of frequency selection surface design in a periodic structure, and particularly relates to a broadband reconfigurable frequency selection surface based on a single-sided loading PIN diode.
Background
The frequency selective surface is a two-dimensional periodic planar structure that can be used for spatial filtering and has selective filtering characteristics for electromagnetic waves of different operating frequencies, angles of incidence and polarization states. Through the adjustment of certain parameters, the band-pass or band-stop of the FSS in the working frequency band can be realized. The electromagnetic properties of the passive frequency selective surface are substantially fixed after the cell structure is determined and cannot be adapted to a varying electromagnetic environment. Thus, a reconfigurable frequency selective surface (Reconfigurable Frequency Selective Surface, RFSS) has developed.
The reconfigurable frequency selective surface is realized mainly by the following ways: 1. active devices (e.g., PIN diodes, varactors) are loaded in the FSS structure. 2. As FSS substrate (e.g. ferrite base, light-sensitive organic material, etc.) a medium with variable electromagnetic properties is used. 3. By changing the interlayer coupling, the resonance characteristics of the frequency selective surface can be changed by controlling the coupling modes and coupling strengths between different layers for the multi-layer frequency selective surface. The PIN diode is used as a microwave radio frequency switch, has the advantages of high response speed, small volume, low price and the like, and is a relatively common mode for realizing the repeatable FSS. Based on the reconfigurable frequency selective surface of the PIN diode, the resonance state of the cell can be changed by changing the state of the diode. The loading mode of the diode is divided into a single-sided loading mode and a double-sided loading mode, and the double-sided loading mode is easy to realize dual polarization in performance, but has certain difficulty in processing; while single-sided loading is easy to process, it is difficult to achieve dual polarized wide bandwidth in performance. In addition, because the electrically controlled devices all require an externally applied bias voltage, it is often necessary to add a feed line within the frequency selective surface array. However, the additional feed lines greatly affect the electromagnetic properties of the active frequency selective surface (e.g., frequency offset, increased insertion loss, spurious signal response, etc.), and increase the difficulty of fabrication. By reasonably designing the active frequency selective surface topological structure and taking the metal periodic structure as a feeder, redundant feeders in the active frequency selective surface array can be removed, and the negative influence brought by a feeder system is greatly reduced.
The university of Nanjing aviation aerospace provides a parallel feed type multifunctional active frequency selection surface in a patent (publication number: CN 106785467A). The active frequency selective surface comprises a dielectric substrate and metal periodic arrays which are orthogonally arranged on two sides of the dielectric substrate, wherein the metal periodic arrays comprise a plurality of metal units which are periodically arranged. The metal unit is square, contains two metal fine rule structures, two metal T type structures and diode, and wherein, two metal fine rule structure parallel arrangement, the horizontal limit parallel arrangement of two metal T type structures, perpendicular limit passes through the diode and links into a straight line. In the metal periodic array, the directions of the diodes in the adjacent metal units in the same row are opposite, and the directions of the diodes in the metal units in the same column are the same. The metal periodic array on one side of the medium is loaded with a varactor diode, and the metal periodic array on the other side is loaded with a PIN diode. The electromagnetic switch function under TE polarization is realized by controlling the on-off of the lower PIN diode, and the isolation of the active frequency selection surface is more than 24dB at the 3GHz position under the two states of bandpass and bandstop. The active frequency selection surface has simple feeder lines, but has narrow transmission bandwidth when the electromagnetic switch function is realized, large insertion loss in a passband, no mention of the incident angle problem and no realization of dual polarization.
In the Dongnan university, a C-band active artificial electromagnetic surface (publication number: 108365343A) is proposed, which consists of a slit-type artificial electromagnetic surface, an active element and a feed network, wherein the active element is formed by serially connecting a PIN diode and a high-frequency constant-value capacitor. The gap type artificial electromagnetic surface comprises a square ring gap structure processed on the upper surface of the medium substrate and a metal through hole in the medium substrate. And the metal through holes are connected with direct current feed lines on the back surface of the medium substrate, and all the feed lines form a feed network. The feed network on the lower surface of the medium substrate is divided into a positive part and a negative part, the positive and negative parts are respectively connected with the negative electrode and the positive electrode of the PIN diode, and the working state is changed by applying bias voltage to the PIN diode, so that the two states of on and off of the artificial electromagnetic surface are realized. The center frequency of the device is 5.10GHz, the insertion loss is smaller than 1dB bandwidth and is 1.32GHz in the "on" state, and the isolation is larger than 20dB bandwidth and is 0.85GHz in the "off" state. The manual electromagnetic surface switching bandwidth is narrow, and dual polarization and angle problems are not considered.
It follows that single-sided loading of PIN diodes while achieving a dual-polarized, wide bandwidth reconfigurable frequency selective surface still presents a significant challenge.
Disclosure of Invention
The invention aims to provide a broadband reconfigurable frequency selective surface based on a single-sided loading PIN diode, which can realize transmission and reflection function switching in an X wave band and has the advantages of simple feeder line, wide-angle incidence and insensitivity to a polarization mode.
The technical solution for realizing the purpose of the invention is as follows: a broadband reconfigurable frequency selective surface based on a single-sided loading PIN diode comprises a dielectric plate, wherein the upper surface and the lower surface of the dielectric plate are respectively provided with a first metal unit and a second metal unit; the first metal unit comprises a first square ring metal patch, a second square ring metal patch and a first square metal patch, wherein the peripheral side length of the first square ring metal patch is equal to the unit period size, the second square ring metal patch is positioned on the inner side of the first square ring metal patch, and the first square metal patch is positioned on the inner side of the second square ring metal patch; the second metal unit is a metal patch structure with rectangular grooves etched on each side of the second square metal patch.
Further, the diodes on the two parallel metal edges are in the same direction.
Further, the side length f of the second square metal patch of the unetched rectangular groove is smaller than the cell cycle size.
Further, an etched rectangular recess in the second square metal patch is located in the middle of each side, and has a width less than half the side length of the second square metal patch.
Further, the side length of the first square metal patch is smaller than the inner side length of the second square ring metal patch.
Further, the outer side length of the second square ring metal patch is smaller than the inner side length of the first square ring metal patch.
Further, the second square ring metal patch has a width greater than the width of the first square ring metal patch.
Further, the first metal unit is symmetrical along a central line axis.
Further, the four rectangular grooves etched by the second metal unit are distributed symmetrically in the vertical direction.
Further, the dielectric constant of the dielectric plate is 2.2.
Compared with the prior art, the invention has the remarkable advantages that: (1) The PIN tubes are all arranged on the upper surface of the dielectric plate, so that only single-sided feeding is needed, and the processing is convenient; (2) The reconfigurable FSS array takes the metal structure as a feed network, so that redundant feed lines in the array are effectively reduced, and the negative influence of the feed system on the electromagnetic characteristics of the array is reduced; (3) The TE/TM polarized wave oblique incidence angle is in the range of 0-45 degrees, the bandwidth of-2 dB under the transmission and reflection states can reach 4GHz, and the TE/TM polarized wave oblique incidence angle has the advantages of dual polarization in a broadband and insensitivity to the oblique incidence angle.
The invention is described in further detail below with reference to the drawings and the detailed description.
Drawings
FIG. 1 is a schematic diagram of a reconfigurable FSS upper surface periodic structure unit.
Fig. 2 is a layered schematic of the overall structure of the reconfigurable FSS.
FIG. 3 is a schematic diagram of a reconfigurable FSS upper surface periodic structure unit.
Fig. 4 is a schematic diagram of a reconfigurable FSS lower surface periodic structure unit.
Fig. 5 is a diagram S11 of the present invention when the PIN tube is turned off and the TE polarized wave is incident at different angles.
Fig. 6 is a diagram S11 of the present invention when the PIN tube is turned off and TM polarized waves are incident at different angles.
Fig. 7 is a diagram of S21 when the PIN tube is turned on and TE polarized waves are incident at different angles.
Fig. 8 is a diagram of S21 when the PIN tube is on and TM polarized waves are incident at different angles.
Detailed Description
The invention is described in further detail below with reference to the accompanying drawings:
as shown in fig. 1-4, the invention provides a wideband reconfigurable frequency selective surface based on a single-sided loading PIN diode, which comprises a dielectric plate 1 and metal units distributed on the upper surface and the lower surface of the dielectric substrate. Wherein the first metal unit of the upper surface comprises a first metal structure 2 and a PIN diode 3 and the second metal unit of the lower surface comprises a second metal structure 2-1.
As shown in fig. 3, the metal unit on the upper surface of the dielectric plate has a period size a=8.2 mm, the first metal structure 2 includes a first square ring metal patch having a peripheral side length equal to the unit period size, a second square ring metal patch having a peripheral side length smaller than the unit period size, a peripheral side length a1=5.6 mm, a ring width w2=0.7 mm, and a first square metal patch having a side length a2=2.2 mm. Wherein each side of the first square ring metal patch of the outermost layer is disconnected from the middle and connected by a PIN diode 3, and the PIN diodes on the two parallel metal sides are in the same direction.
As shown in fig. 4, the second metal unit on the lower surface of the dielectric plate is a metal patch structure, and the patch structure can be regarded as etching a rectangular groove on each side of the second square metal patch, and the four etched rectangular grooves are symmetrically distributed from top to bottom and from left to right, the side length of the square metal patch of the unetched rectangular groove is f=5.2 mm, the length y=1.1 mm of the etched rectangular groove, and the width x=1 mm.
When the PIN diode is conducted, the upper surface of the dielectric plate can be regarded as a double square gap ring array, the lower surface of the dielectric plate is a fractal square metal patch array, and two layers of FSS are mutually coupled to resonate in an X-wave band and are in a transmission state; when the PIN diode is cut off, the upper surface of the dielectric plate can be regarded as a metal patch array, the metal patch array comprises a cross patch, a square ring and a square patch, the fractal square metal patch array is arranged on the lower surface, and the two layers of FSS are mutually coupled to resonate in an X wave band and are in a reflecting state.
The invention is described in further detail below in connection with simulation examples.
Examples
The dielectric substrate selected by the invention is a 5880 plate with a dielectric constant of 2.2 and a thickness of h=1.016 mm, the thickness of copper foil on the surface of the dielectric plate is 17.5 mu m, and the model number of the PIN diode is DSM8100-000.
The specific dimensions of the FSS are shown in fig. 1-4 and table 1:
TABLE 1
| a/mm | h/mm | w/mm | a1/mm | a2/mm |
| 8.2 | 1.016 | 0.6 | 5.6 | 2.2 |
| y/mm | f/mm | w2/mm | s/mm | x/mm |
| 1.1 | 5.2 | 0.7 | 0.4 | 1 |
Fig. 5-8 are S parameters simulated under electromagnetic simulation software CST for the designed reconfigurable FSS. Because the structure is in a reflection state, the S21 parameter is smaller than-20 dB in the working frequency band; in the transmission state, the S11 parameters are smaller than-20 dB in the working frequency band, so that the graphs are all listed with related curves.
Fig. 5 is a diagram of S11 when TE polarized waves are incident at different angles in the off state of the diode. The incident angle is 0 degrees, and the frequency range of-2 dB is 5.25 GHz-12.66 GHz; the incident angle is 15 degrees, and the frequency range of-2 dB is 5 GHz-12.58 GHz; the incident angle is 30 degrees, and the frequency range of-2 dB is 5 GHz-12.41 GHz; the incident angle is 45 degrees, and the frequency range of-2 dB is 5 GHz-12.33 GHz.
Fig. 6 is a diagram of S11 when TM polarized waves are incident at different angles in the off state of the diode. The incident angle is 0 degrees, and the frequency range of-2 dB is 5 GHz-12.66 GHz; the incident angle is 15 degrees, and the frequency range of-2 dB is 5.33 GHz-12.75 GHz; the incident angle is 30 degrees, and the frequency range of-2 dB is 5.88 GHz-12.8 GHz; the incident angle is 45 degrees, and the frequency range of-2 dB is 6.88 GHz-12.88 GHz.
Fig. 7 is a diagram of S21 when TE polarized waves are incident at different angles in the on state of the diode. The incident angle is 0 degrees, and the frequency range of-2 dB is 7.25 GHz-12.1 GHz; the incident angle is 15 degrees, and the frequency range of-2 dB is 7.33 GHz-12.1 GHz; the incident angle is 30 degrees, and the frequency range of-2 dB is 7.7 GHz-12.1 GHz; the incident angle is 45 degrees, and the frequency range of-2 dB is 8 GHz-12.1 GHz.
Fig. 8 is a diagram of S21 when TM polarized waves are incident at different angles in the on state of the diode. The incident angle is 0 degrees, and the frequency range of-2 dB is 7.58 GHz-12.13 GHz; the incident angle is 15 degrees, and the frequency range of-2 dB is 7.58 GHz-12.13 GHz; the incident angle is 30 degrees, and the frequency range of-2 dB is 7.42 GHz-12.1 GHz; the incident angle is 45 degrees, and the frequency range of-2 dB is 7.3 GHz-12.1 GHz.
Therefore, the oblique incidence angle is in the range of 0-45 degrees, the bandwidth of-2 dB of the reconfigurable FSS in the transmission and reflection states can reach 4GHz, and the reconfigurable FSS has the advantages of dual polarization in a broadband and insensitivity to the oblique incidence angle.
Claims (9)
1. The wideband reconfigurable frequency selective surface based on the single-sided loading PIN diode comprises a dielectric plate, and is characterized in that a first metal unit and a second metal unit are respectively arranged on the upper surface and the lower surface of the dielectric plate; the first metal unit comprises a first square ring metal patch, a second square ring metal patch and a first square metal patch, wherein the peripheral side length of the first square ring metal patch is equal to the unit period size, the second square ring metal patch is positioned on the inner side of the first square ring metal patch, and the first square metal patch is positioned on the inner side of the second square ring metal patch; the second metal unit is a metal patch structure, and the metal patch structure is formed by etching rectangular grooves on each side of a second square metal patch; PIN diodes on two parallel metal edges of the first square ring metal patch are in the same direction.
2. The wideband reconfigurable frequency selective surface based on single-sided loading PIN diodes according to claim 1, wherein the side length of the second square metal patch of unetched rectangular recess is smaller than the cell cycle size.
3. The wideband reconfigurable frequency selective surface based on single-sided loading PIN diodes according to claim 2, wherein the etched rectangular recess in the second square metal patch is centered on each side and has a width less than half the side length of the second square metal patch.
4. The wideband reconfigurable frequency selective surface based on single-sided loading PIN diodes according to claim 1, wherein the side length of the first square shaped metal patch is smaller than the inner side length of the second square shaped ring metal patch.
5. The wideband reconfigurable frequency selective surface based on single-sided loading PIN diodes according to claim 4, wherein the outer length of the second square ring metal patch is smaller than the inner length of the first square ring metal patch.
6. The single-sided loading PIN diode based broadband reconfigurable frequency selective surface of claim 5, wherein the width of the second square ring metal patch is greater than the width of the first square ring metal patch.
7. The single-sided loading PIN diode based broadband reconfigurable frequency selective surface of claim 4, wherein the first metal unit is axisymmetric along a midline.
8. The wideband reconfigurable frequency selective surface based on single-sided loading PIN diodes according to claim 4, wherein the four rectangular recesses etched by the second metal unit are symmetrically distributed from top to bottom.
9. The wideband reconfigurable frequency selective surface based on single-sided loading PIN diodes according to claim 1, wherein the dielectric constant of the dielectric plate is 2.2.
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| CN114336006A (en) * | 2021-11-29 | 2022-04-12 | 中国人民解放军国防科技大学 | Antenna with frequency reconfigurable in-phase reflection characteristic |
| CN114374097B (en) * | 2022-01-26 | 2023-04-28 | 西安电子科技大学 | Broadband, multi-frequency and variable-frequency antenna coating |
| CN115207619B (en) * | 2022-07-25 | 2023-04-28 | 中国电子科技集团公司第五十四研究所 | Terahertz wave band directional diagram reconfigurable antenna |
| CN116154468B (en) * | 2023-04-19 | 2023-06-16 | 湖南大学 | Broadband dual-polarized reflection unit and programmable reflection antenna |
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| CN112510375A (en) * | 2020-11-20 | 2021-03-16 | 航天特种材料及工艺技术研究所 | Frequency selection surface with reconfigurable pass band and basic unit |
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