CN112838374A - Flexible active frequency selection surface and control method thereof - Google Patents
Flexible active frequency selection surface and control method thereof Download PDFInfo
- Publication number
- CN112838374A CN112838374A CN202011634563.8A CN202011634563A CN112838374A CN 112838374 A CN112838374 A CN 112838374A CN 202011634563 A CN202011634563 A CN 202011634563A CN 112838374 A CN112838374 A CN 112838374A
- Authority
- CN
- China
- Prior art keywords
- metal
- active frequency
- flexible
- periodic array
- frequency selective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
Landscapes
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
The invention discloses a flexible active frequency selection surface and a control method thereof.A unit structure of the selection surface comprises a low-profile flexible medium substrate and metal periodic arrays respectively arranged on the lower side of the medium substrate. When the flexible active frequency selection surface works, the two bias systems are independently biased, and four working states can be configured, wherein the four working states are as follows: the band-pass of double polarization band elimination, TE single polarization band-pass, TM single polarization band-pass, double polarization band-pass constitute two kinds of functions: electromagnetic switching and polarization selection. The invention integrates multiple functions, has soft substrate, is suitable for complex application scenes, is simple to manufacture, has good angle stability and has wide application prospect.
Description
Technical Field
The present invention relates to an active frequency selective surface and a control method thereof, and more particularly, to a flexible active frequency selective surface and a control method thereof.
Background
With the development of science and technology and economy, various information devices are increasingly applied to the military and civil fields, and electromagnetic transmission and electromagnetic compatibility among the information devices, electromagnetic interference resistance of precise instruments, electromagnetic radiation resistance of human bodies and the like require transmission control or absorption loss of electromagnetic signals. The Frequency Selective Surface (FSS) has selective permeability to electromagnetic waves, which makes it widely used in the fields of radomes, spatial electromagnetic filters, modification of absorbing materials, and the like.
With the development and progress of stealth technology, a radar antenna system and various radio frequency sensors on a stealth aircraft platform become main contributors of a radar scattering cross section (RCS), and the stealth technology of the radar antenna system and various radio frequency sensors is very important for the overall stealth performance of the aircraft. However, the radar antenna is used as the foremost end of information interaction, and the normal transmission and reception of electromagnetic waves must be ensured, so that the stealth technology cannot be realized by directly applying the appearance stealth technology or coating radar wave-absorbing materials and other methods. At present, the most widely used stealth technology at home and abroad is the Frequency Selective Surface (FSS) technology.
The FSS is a two-dimensional periodic array structure formed by periodically arranging unit patterns with specific shapes, and the reflection characteristic and the transmission characteristic of the FSS are expressed as functions of frequency. Factors that have an influence on the transmission characteristics thereof include the size of the unit, the arrangement period, the incident angle of the electromagnetic wave, and the like. Since the FSS exhibits the function of an electromagnetic filter in an open space, which is also called a spatial filter, the FSS attracts much attention in the aspects of antenna design, surface wave processing, radar cross section control, and the like, and is one of the research hotspots in the field of antennas and microwaves. The antenna housing designed based on the band-pass FSS usually reflects electromagnetic waves transmitted out of band to other directions by a conformal technology, so that backscattering is reduced; the antenna housing shows high transparency in the working frequency band of the antenna, so that the antenna becomes a large scattering source and cannot be really invisible. To ameliorate this disadvantage, reducing the in-band RCS, the concept of an active frequency selective surface is introduced into the design of a radome to form a radome with a switching function. The design of the switch for switching the frequency selection surface between the transparent state and the total reflection state can effectively reduce the RCS in the band, and the switch can present transmission characteristics in a wider frequency band so as to be more suitable for being applied to a broadband or multi-frequency antenna, thereby having wide application prospect.
With the continuous development of the prior art, the research on the multifunctional active frequency selective surface structure has higher practical value for wave absorption, stealth, polarization conversion and other applications, and is also an important hotspot for the frequency selective surface research of electromagnetic extraordinary media in the future. The traditional active frequency selection surface can only realize one function, such as an electromagnetic wave switch or a polarization selection or frequency tuning wave-transparent/wave-absorbing switching function, and can not efficiently utilize resources.
Disclosure of Invention
The purpose of the invention is as follows: a first object of the present invention is to provide a flexible active frequency selective surface excellent in electromagnetic performance, and a second object of the present invention is to provide a control method of the flexible active frequency selective surface.
The technical scheme is as follows: the unit structure of the flexible active frequency selection surface comprises a low-profile flexible medium substrate and metal periodic arrays respectively arranged on the lower side of the medium substrate.
Furthermore, the metal periodic array comprises a plurality of metal units which are arranged in a two-dimensional periodic manner. The metal unit is square and comprises an upper layer metal pattern, a lower layer metal pattern, a PIN diode and a metal through hole. The PIN diode is located between the upper layer metal pattern and the lower layer metal pattern, and the PIN diode is connected with the upper layer metal pattern and the lower layer metal pattern.
The upper layer metal pattern and the lower layer metal pattern are in mirror symmetry, each layer of metal pattern is composed of a plurality of zigzag lines, and any zigzag line rotates around the center of the unit to obtain another zigzag line.
Preferably, the zigzag lines at the corresponding positions of the upper layer and the lower layer are communicated through metal through holes, and each metal through hole is positioned at the innermost side of each zigzag line and is distributed in central symmetry.
The PIN diode is located the center of upper and lower floor and the quadrature is placed, and the PIN diode is connected upper left and right zigzag line and lower floor front and back zigzag line. The metal periodic array on the upper side of the dielectric substrate and the metal periodic array on the lower side of the dielectric substrate are arranged orthogonally.
The medium substrate adopts a polytetrafluoroethylene high-frequency microwave plate. The metal unit adopts copper with the thickness of 0.5-3 oz.
The flexible active frequency selective surface of the present invention enhances the flexibility of control means and structure. The frequency selective surface made of the hard substrate cannot adapt to a slightly complicated application environment, the common frequency selective surface can solve the problem, but the shape of the frequency selective surface cannot be changed again after the frequency selective surface is manufactured, and in order to further increase the flexibility of the frequency selective surface, the low-dielectric-constant medium is adopted as the flexible substrate, so that the flexible substrate has a larger application space compared with the traditional hard substrate. The traditional flexible frequency selection surface is passive and is not suitable for an intelligent stealth system, the flexible frequency selection surface has the advantages of flexibility and multiple functions, the structure is simple, the preparation is convenient, and the electromagnetic regulation and control performance under a complex electromagnetic environment is better realized.
The control method of the active frequency selective surface of the invention comprises the following steps:
if the flexible multifunctional active frequency selection surface is required to work in a dual-polarization band-stop state, direct-current bias voltage is not loaded on the metal periodic array on the upper side of the medium substrate and the metal periodic array on the lower side of the medium substrate;
if the flexible multifunctional active frequency selection surface is required to work in a dual-polarization transmission state, direct-current bias voltage is loaded on the metal periodic array on the upper side of the dielectric substrate and the metal periodic array on the lower side of the dielectric substrate along the direction of the PIN diode;
if the flexible multifunctional active frequency selection surface is required to work in a TE polarized wave selection state, a direct current bias voltage is not loaded on the metal periodic array on the upper side of the medium substrate, and the direct current bias voltage is loaded on the metal periodic array on the lower side of the medium substrate along the direction of the PIN diode;
if the flexible multifunctional active frequency selection surface is required to work in a TM polarized wave selection state, a direct current bias voltage is loaded on the metal periodic array on the upper side of the medium substrate along the PIN diode direction of the metal periodic array, and the direct current bias voltage is not loaded on the metal periodic array on the lower side of the medium substrate.
Has the advantages that: compared with the prior art, the invention has the following remarkable advantages:
(1) by utilizing a special zigzag line topological structure, the size of the unit is greatly miniaturized, and the angle and polarization stability are improved. The zigzag line is connected with the metal direct current feeder line to bias the PIN tube, so that no additional bias line is needed in the unit, and the redundant bias line is greatly prevented from interfering the electromagnetic property of the frequency selection surface;
(2) the PIN tubes on the upper layer of metal array and the lower layer of metal array are respectively and independently biased through two sets of bias line systems, four bias states can be realized, namely four working states of dual-polarization band rejection, dual-polarization wave transmission, TE polarized wave selection, TM polarized wave selection and the like, two functions of an electromagnetic wave switch and polarization selection can be realized on one active frequency selection surface, the device is simple in structure and easy to process, and the angle and polarization stability are excellent;
(3) the flexible medium substrate is adopted to manufacture the active frequency selection surface, so that the flexibility of the device can be greatly improved, and the device is very suitable for complex application environments; stable electromagnetic properties are shown in TE, TM polarization and 0-75 degrees;
(4) the problems of redundancy, single function and rigid structure of the existing active frequency selection surface feeder line are effectively solved, and the active frequency selection surface feeder line can be widely applied to the fields of electromagnetic stealth, electromagnetic compatibility and reconfigurable device design.
Drawings
FIG. 1 is a side view of a flexible multifunctional active frequency selective surface periodic structure based on PIN diodes of the present invention;
fig. 2(a) and 2(b) are schematic structural diagrams of upper and lower metal units of a flexible multifunctional active frequency selective surface, respectively;
FIG. 3 is a schematic diagram of an array structure of a multifunctional active frequency selective surface;
fig. 4(a), fig. 4(b), fig. 4(c), fig. 4(d) are graphs of electromagnetic wave transmission coefficients of two polarizations under normal incidence and frequency respectively when the bias states of the upper and lower layer PIN diodes of the flexible multifunctional frequency selective surface based on the PIN diodes of the present invention are "00", "01", "10", "11" (for example, "01" indicates that the upper layer PIN diode is turned off and the lower layer PIN diode is turned on);
FIGS. 5(a) and 5(b) are graphs of electromagnetic wave transmission coefficient in "00" state in TE and TM polarization, respectively, as a function of frequency and incident angle;
Detailed Description
The technical solution of the present invention is further illustrated by the following examples.
In order to solve the technical problem, the invention designs a flexible multifunctional active frequency selection surface based on a PIN diode, and a unit structure comprises a low-profile flexible medium substrate and metal periodic arrays respectively arranged on the lower side of the medium substrate.
The metal periodic array comprises a plurality of metal units which are periodically arranged in a two-dimensional manner:
the metal unit is square and comprises an upper metal pattern, a lower metal pattern, two PIN diodes, four metal pads and four metal through holes. Wherein the upper and lower metal patterns are mirror-symmetrical, each metal pattern is composed of four zigzag lines, and another three zigzag lines can be obtained by rotating any one zigzag line for 90 degrees, 180 degrees and 170 degrees around the center of the unit. The four metal via holes are used for communicating the zigzag lines at the corresponding positions of the upper layer and the lower layer, each via hole is positioned at the innermost side of each zigzag line, and the four via holes are distributed at 90 degrees in central symmetry. The two PIN diodes are respectively positioned in the centers of the upper layer and the lower layer and are orthogonally arranged, and the two PIN diodes are respectively used for connecting the upper layer left and right zigzag lines and the lower layer upper and lower zigzag lines. Four pads are respectively distributed two on upper and lower layers and are used for welding PIN pipe.
As shown in fig. 1 and fig. 2(a) - (b), the present invention realizes the function of frequency selection by the substrate (1) and the miniaturized meander line patterns 2 and 3 etched on the upper and lower surfaces thereof: high-efficiency reflection of a certain specific frequency band is met, and loss-free wave transmission is realized outside the band; the upper PIN diode and the lower PIN diode are conducted at the same time, so that high wave-transmitting rate is presented in the frequency band; the PIN tube passes through the upper (lower) layer while the lower (upper) layer cuts off the reflection of the incident wave of the te (tm) polarization and transmits the incident wave of the tm (te) polarization. And further, the structural design integrating two functions of electromagnetic wave switching and polarization selection is realized. In fig. 1, 1 is a flexible dielectric substrate, 2 and 3 are upper and lower metal patterns, 4 is a through-direct-isolated ac inductor, 5 is a metal unit, a 1-a 4 are upper layer zigzag line patches, a 5-A8 lower layer zigzag line patches, B1-B4 are upper layer via hole positions, B5-B8 are lower layer via hole positions, C1 is an upper layer PIN tube, C2 is a lower layer PIN tube, D1-D2 are upper layer pads, and D3-D4 are lower layer pads.
The dielectric substrate adopts a F4B polytetrafluoroethylene high-frequency microwave plate with the thickness of 0.25 mm. The metal unit is 35 μm thick copper. The PIN diode is a PIN diode packaged by a BAR50-02L model TSLP-2-1.
The invention discloses a control method of a multifunctional active frequency selection surface, which comprises the following steps:
if the multifunctional active frequency selection surface is required to work in a dual-polarized band-pass state, direct-current bias voltage is loaded on the metal periodic array on the upper side of the dielectric substrate and the metal periodic array on the lower side of the dielectric substrate along the direction of the PIN diode;
if the multifunctional active frequency selection surface is required to work in a dual-polarized shielding state, direct-current bias voltage is not loaded on the metal periodic array on the upper side of the dielectric substrate and the metal periodic array on the lower side of the dielectric substrate;
if the multifunctional active frequency selection surface is required to work in a TE polarized wave shielding state, loading direct current bias voltage on the metal periodic array on the upper side of the medium substrate along the PIN diode direction of the metal periodic array, and not loading the direct current bias voltage on the metal periodic array on the lower side of the medium substrate;
if the multifunctional active frequency selection surface is required to work in a TM polarized wave shielding state, a direct current bias voltage is not loaded on the metal periodic array on the upper side of the medium substrate, and the direct current bias voltage is loaded on the metal periodic array on the lower side of the medium substrate along the PIN diode direction of the metal periodic array.
The circumference of the whole unit structure of the PIN tube-based flexible multifunctional active frequency selection surface is 4.4mm, and the whole height is 0.257 mm. The substrate is made of F4B dielectric material with the relative dielectric constant of 2.2 and the loss tangent of 0.007, and the thickness is 0.25 mm; the thickness of the surface of the patch type frequency selection surface periodically arranged on the upper surface and the lower surface of the substrate is 0.035mm, the width of the zigzag line is 0.3mm, the gap between the zigzag lines is 0.25mm, the via hole is a hollow cylinder with copper coated on the inner wall, and the aperture is 0.3 mm. And 4, the isolation inductance is a TDK MLG1608 model 2.2nH inductance value, and is used for isolating the bias network from the metal array to avoid electromagnetic interference.
In the invention, the positive pole of the upper layer (lower layer) bias network is supplied with the voltage Ut + (Ub +), the negative pole is grounded and represents the state of '1', and the PIN tube on the upper layer is conducted; the anode and the cathode of the upper (lower) layer bias network are both suspended and are not connected with a power supply, and the state represents a '0'. The different bias state combinations of the upper and lower layer bias networks are four, which are: "00", "01", "10", "11". These four bias states represent respectively four operating states of the PIN diode based flexible multifunctional frequency selective surface of the present invention: the dual-polarization band rejection, the TE polarization selective wave-transparent, the TM polarization selective wave-transparent and the dual-polarization wave-transparent.
According to the specific working frequency range and the application scene of the flexible multifunctional frequency selection surface, the medium substrate 1 can be made of polytetrafluoroethylene, polyimide and the like, and the metal material can be made of metal with good conductivity such as silver, copper and the like. The PIN diode can be selected from small packaged PIN diodes of different models according to different frequency bands, such as BAP64LX model of NXP company, BAR50-02 model of INFINENON company, BAR64 model, SMP1321 model of SKYWORKS company, SMP1340 model and the like.
In this embodiment, the multifunctional active frequency selective surface operates in a microwave band, the dielectric substrate is made of F4B2.2 microwave board with a thickness of 0.25mm, and a 60X60 metal periodic array with a total size of 280mm X280mm is fabricated on the upper and lower surfaces of the dielectric substrate by a standard PCB processing process.
Fig. 3 shows a feeding method according to an embodiment of the present invention. The upper and lower arrays are loaded with two voltage sources respectively, as shown in FIG. 3, the upper and lower positive electrode feeding points are connected with the positive electrode U of the voltage source respectivelyb+ and another positive voltage source UtAnd the upper layer negative pole feed point and the lower layer negative pole feed point are respectively connected with the negative poles of two voltage sources and can be connected with the common ground. In the figure 4 is the line feeding the array and 5 is the active frequency selective surface element.
As shown in fig. 4(a) - (d), fig. 4(a), fig. 4(b), fig. 4(c), and fig. 4(d) show the measured results of the transmission coefficient S21 of the multifunctional active frequency selective surface of the present embodiment when the applied dc bias voltage is in different encoding states "00", "01", "10", and "11", respectively. When the coding state is '00', the applied direct current bias voltage of the upper layer and the lower layer is 0V, all PIN tubes are in a disconnected state, and the dual-polarized band-pass is respectively arranged at 10GHz and 9.3GHz positions under TE and TM polarization excitation in the embodiment of the invention, and the-15 dB bandwidth is 2 GHz; when the coding state is '01', the external direct current bias voltage of the upper layer is 0V, the external direct current bias voltage of the lower layer is 55V, the single-polarization band pass is adopted when TE polarization excitation is carried out at 7.2 GHz-12.6 GHz, the insertion loss is less than 5dB, the single-polarization band pass is adopted when TM polarization excitation is carried out at 9.3GHz, and the-15 dB bandwidth is 2 GHz; when the coding state is '10', the external direct current bias voltage of the upper layer is 55V, the external direct current bias voltage of the lower layer is 0V, the single-polarization band-pass is realized at 10GHz, the-15 dB bandwidth is 2GHz, the single-polarization band-pass is realized at 5 GHz-12 GHz, and the insertion loss is less than 5dB in the TE polarization excitation; when the coding state is '11', the external direct current bias voltage of the upper layer and the external direct current bias voltage of the lower layer are both 55V, all PIN tubes are in a conducting state, the embodiment of the invention is in a dual-polarization transmission state under TE and TM polarization excitation at 7.2 GHz-12 GHz, and the insertion loss is less than 5 dB.
FIGS. 5(a) and 5(b) are graphs of transmission coefficients at 0 DEG to 75 DEG, respectively, under excitation of incident waves of TE and TM polarizations in a "00" bias state in the example of the present invention. It can be seen that the flexible multifunctional frequency selective surface based on the PIN diode can still maintain better electromagnetic characteristics under the excitation of incident waves of up to 75 degrees.
In conclusion, the invention can realize two functions on one plate, has stable electromagnetic property under multi-angle incidence, and has flexible design and convenient manufacture.
Claims (10)
1. A flexible active frequency selective surface, characterized by: the unit structure of the frequency selective surface comprises a low-profile flexible dielectric substrate (1) and metal periodic arrays respectively arranged on the upper side and the lower side of the dielectric substrate (1).
2. A flexible active frequency selective surface according to claim 1, characterized in that: the metal periodic array comprises a plurality of metal units (5) which are periodically arranged in a two-dimensional manner.
3. The active frequency selective surface of claim 2, wherein: the metal unit (5) is made of copper with the thickness of 0.5-3 oz.
4. A flexible active frequency selective surface according to claim 2, characterized in that: the metal unit (5) is square and comprises an upper layer metal pattern, a lower layer metal pattern and a PIN diode, wherein the PIN diode is positioned between the upper layer metal pattern and the lower layer metal pattern and used for connecting the upper layer metal pattern and the lower layer metal pattern.
5. A flexible active frequency selective surface according to claim 4, characterized in that: the upper layer metal pattern and the lower layer metal pattern are in mirror symmetry, each layer of metal pattern is composed of a plurality of zigzag lines, and any zigzag line rotates around the center of the unit to obtain another zigzag line.
6. A flexible active frequency selective surface according to claim 5, characterized in that: the zigzag lines at the corresponding positions of the upper layer and the lower layer are communicated through metal through holes, and each metal through hole is positioned at the innermost side of each zigzag line and is distributed in central symmetry.
7. A flexible active frequency selective surface according to claim 5, characterized in that: the PIN diode is located the center of upper and lower floor and the quadrature is placed, and the PIN diode is connected upper left and right zigzag line and lower floor front and back zigzag line.
8. A flexible active frequency selective surface according to claim 1, characterized in that: the metal periodic array on the upper side of the medium substrate (1) and the metal periodic array on the lower side of the medium substrate (1) are arranged orthogonally.
9. A flexible active frequency selective surface according to claim 1, characterized in that: the medium substrate (1) adopts a polytetrafluoroethylene high-frequency microwave plate.
10. A method of controlling an active frequency selective surface as claimed in claim 1, comprising the steps of:
if the flexible multifunctional active frequency selection surface is required to work in a dual-polarization band-stop state, direct-current bias voltage is not loaded on the metal periodic array on the upper side of the dielectric substrate (1) or the metal periodic array on the lower side of the dielectric substrate (1);
if the flexible multifunctional active frequency selection surface is required to work in a dual-polarization transmission state, direct-current bias voltage is loaded on the metal periodic array on the upper side of the dielectric substrate (1) and the metal periodic array on the lower side of the dielectric substrate (1) along the direction of the PIN diode;
if the flexible multifunctional active frequency selection surface is required to work in a TE polarized wave selection state, a direct current bias voltage is not loaded on the metal periodic array on the upper side of the medium substrate (1), and the direct current bias voltage is loaded on the metal periodic array on the lower side of the medium substrate (1) along the direction of a PIN diode of the metal periodic array;
if the flexible multifunctional active frequency selection surface is required to work in a TM polarized wave selection state, a direct current bias voltage is loaded on the metal periodic array on the upper side of the dielectric substrate (1) along the PIN diode direction of the metal periodic array, and the direct current bias voltage is not loaded on the metal periodic array on the lower side of the dielectric substrate (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011634563.8A CN112838374A (en) | 2020-12-31 | 2020-12-31 | Flexible active frequency selection surface and control method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011634563.8A CN112838374A (en) | 2020-12-31 | 2020-12-31 | Flexible active frequency selection surface and control method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112838374A true CN112838374A (en) | 2021-05-25 |
Family
ID=75926413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011634563.8A Pending CN112838374A (en) | 2020-12-31 | 2020-12-31 | Flexible active frequency selection surface and control method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112838374A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113451781A (en) * | 2021-05-28 | 2021-09-28 | 西安电子科技大学 | Microminiaturized 2.5-dimensional absorption and penetration integrated frequency selection wave absorber |
| CN113451784A (en) * | 2021-07-14 | 2021-09-28 | 海宁利伊电子科技有限公司 | High-performance packaging radiation absorption structure |
| CN115498422A (en) * | 2022-09-20 | 2022-12-20 | 中南大学 | AFSS-based adjustable ultra-wideband multilayer composite wave-absorbing structure |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100201465A1 (en) * | 2007-08-14 | 2010-08-12 | Mckinzie Iii William E | Apparatus and method for electromagnetic mode suppression in microwave and millimeterwave packages |
| CN104064840A (en) * | 2014-07-09 | 2014-09-24 | 南京师范大学 | Miniaturization band elimination type frequency selective surface |
| CN106329041A (en) * | 2016-09-26 | 2017-01-11 | 南京航空航天大学 | Multifunctional active frequency selective surface and control method thereof |
| CN108054517A (en) * | 2017-10-31 | 2018-05-18 | 南京邮电大学 | Frequency-selective surfaces are hindered based on the miniaturization unit band of folding line and interdigital structure |
| CN111478050A (en) * | 2020-04-16 | 2020-07-31 | 中国人民解放军国防科技大学 | Flexible electromagnetic scattering regulation and control structure and manufacturing method thereof |
| CN111987400A (en) * | 2020-07-27 | 2020-11-24 | 南京航空航天大学 | Light-operated wave-absorbing active frequency selective surface |
| CN111987439A (en) * | 2020-07-27 | 2020-11-24 | 南京航空航天大学 | Miniaturized passive flexible band-pass frequency selection surface for antenna housing |
-
2020
- 2020-12-31 CN CN202011634563.8A patent/CN112838374A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100201465A1 (en) * | 2007-08-14 | 2010-08-12 | Mckinzie Iii William E | Apparatus and method for electromagnetic mode suppression in microwave and millimeterwave packages |
| CN104064840A (en) * | 2014-07-09 | 2014-09-24 | 南京师范大学 | Miniaturization band elimination type frequency selective surface |
| CN106329041A (en) * | 2016-09-26 | 2017-01-11 | 南京航空航天大学 | Multifunctional active frequency selective surface and control method thereof |
| CN108054517A (en) * | 2017-10-31 | 2018-05-18 | 南京邮电大学 | Frequency-selective surfaces are hindered based on the miniaturization unit band of folding line and interdigital structure |
| CN111478050A (en) * | 2020-04-16 | 2020-07-31 | 中国人民解放军国防科技大学 | Flexible electromagnetic scattering regulation and control structure and manufacturing method thereof |
| CN111987400A (en) * | 2020-07-27 | 2020-11-24 | 南京航空航天大学 | Light-operated wave-absorbing active frequency selective surface |
| CN111987439A (en) * | 2020-07-27 | 2020-11-24 | 南京航空航天大学 | Miniaturized passive flexible band-pass frequency selection surface for antenna housing |
Non-Patent Citations (1)
| Title |
|---|
| YI-MIN YU等: "A Novel 2.5-Dimensional Ultraminiaturized-Element Frequency Selective Surface", 《IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113451781A (en) * | 2021-05-28 | 2021-09-28 | 西安电子科技大学 | Microminiaturized 2.5-dimensional absorption and penetration integrated frequency selection wave absorber |
| CN113451784A (en) * | 2021-07-14 | 2021-09-28 | 海宁利伊电子科技有限公司 | High-performance packaging radiation absorption structure |
| CN115498422A (en) * | 2022-09-20 | 2022-12-20 | 中南大学 | AFSS-based adjustable ultra-wideband multilayer composite wave-absorbing structure |
| CN115498422B (en) * | 2022-09-20 | 2023-08-29 | 中南大学 | AFSS-based adjustable ultra-wideband multilayer composite wave absorbing structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20190386364A1 (en) | Angle of incidence-stable frequency selective surface device | |
| CN102723601B (en) | Ultra-wide-band dual-notch paster antenna adopting wide-attenuation-band electromagnetic band gap structure | |
| CN112838374A (en) | Flexible active frequency selection surface and control method thereof | |
| CN106602252B (en) | 2.5-dimensional ultra-wideband mobile communication radome with grid square ring loaded via hole structure | |
| CN110190408B (en) | Circularly polarized electromagnetic dipole array antenna | |
| CN109390699A (en) | A kind of controllable paster antenna of small beams based on restructural parasitic element | |
| CN105006652A (en) | Pattern-reconfigurable antenna based on graphene composite structure frequency selective surface | |
| CN109599657B (en) | Design method for 5G base station-oriented antenna array based on integrated design of antenna array and power division feed network | |
| CN109411894B (en) | Dual-polarized broadband external suppression three-dimensional frequency selection surface | |
| CN107978858B (en) | Pattern reconfigurable antenna working in 60GHz frequency band | |
| EP3432422B1 (en) | Antenna | |
| CN106299701B (en) | Light-operated broadband directional diagram reconfigurable antenna | |
| CN113644449B (en) | Broadband reconfigurable frequency selective surface based on single-sided loading PIN diode | |
| CN108155467A (en) | A kind of mimo antenna based on F-P cavity | |
| WO2006079994A1 (en) | Radiation enhanced cavity antenna with dielectric | |
| CN110492242A (en) | A kind of ultra-thin half short circuit round polarization top radiating antenna | |
| CN114267957A (en) | Multifunctional broadband dual-polarization active wave absorbing and reflecting device | |
| Ojukwu et al. | Metasurface-aided wireless power transfer and energy harvesting for future wireless networks | |
| CN114843790A (en) | Multi-dimensional adjustable digital coding super surface | |
| CN114256614B (en) | Ultra-wideband planar antenna array applied to millimeter wave communication system | |
| CN104347952A (en) | Meta-material and antenna | |
| CN112615145B (en) | Hemispherical wave beam ultra-wideband circularly polarized antenna | |
| CN109616778A (en) | The passive multiple-beam array device of millimeter wave and its implementation for mobile terminal | |
| CN113644450A (en) | X-waveband broadband large-angle dual-polarized active reconfigurable frequency selection surface | |
| CN209001141U (en) | A kind of controllable paster antenna of small beams based on restructural parasitic element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210525 |
|
| RJ01 | Rejection of invention patent application after publication |