CN116154468B - Broadband dual-polarized reflection unit and programmable reflection antenna - Google Patents
Broadband dual-polarized reflection unit and programmable reflection antenna Download PDFInfo
- Publication number
- CN116154468B CN116154468B CN202310422108.9A CN202310422108A CN116154468B CN 116154468 B CN116154468 B CN 116154468B CN 202310422108 A CN202310422108 A CN 202310422108A CN 116154468 B CN116154468 B CN 116154468B
- Authority
- CN
- China
- Prior art keywords
- dielectric layer
- patch
- radiation patch
- polarized
- broadband dual
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/14—Reflecting surfaces; Equivalent structures
- H01Q15/148—Reflecting surfaces; Equivalent structures with means for varying the reflecting properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/24—Polarising devices; Polarisation filters
- H01Q15/242—Polarisation converters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q19/00—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
- H01Q19/10—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/30—Combinations of separate antenna units operating in different wavebands and connected to a common feeder system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/44—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
The application belongs to the technical field of reflection antennas, and relates to a broadband dual-polarized reflection unit and a programmable reflection antenna, wherein the broadband dual-polarized reflection unit comprises: the first dielectric layer, the second dielectric layer and the third dielectric layer are sequentially overlapped; the top surface of the first medium layer is provided with a first radiation patch, and the top surface of the second medium layer is provided with a second radiation patch; the first radiation patch and the second radiation patch are rectangular structures; two microstrip lines and a direct current bias circuit are arranged on the bottom surface of the third dielectric layer; one corresponding end of the two microstrip lines is respectively connected with two adjacent edges of the second radiation patch, the other corresponding end of the two microstrip lines is grounded, and each microstrip line is provided with a diode; the direct current bias circuit is connected with the second radiation patch to control the on-off state of the diode, so that the diode works in an on or off state to realize x polarization or y polarization. By adopting the method and the device, the dual polarization can be realized and the bandwidth can be improved.
Description
Technical Field
The application relates to the technical field of reflection antennas, in particular to a broadband dual-polarized reflection unit and a programmable reflection antenna.
Background
The programmable reflection array antenna is generally formed by periodically arranging programmable units, wherein the programmable units are of a human electromagnetic structure, and the characteristics of amplitude, phase, polarization mode and the like of electromagnetic waves can be flexibly regulated and controlled through the design of the surface structures of the units. Therefore, the programmable reflection array antenna can regulate and control the direction of a radiation beam by meeting the phase distribution of each unit in the array, thereby realizing the function of beam scanning.
With the development of communication technology, communication systems such as radar detection and satellite navigation put higher requirements on antennas, and the programmable reflection array antenna only has the function of beam scanning, so that the requirements cannot be met, and the antenna also needs a dual-polarized working mode and a wider working bandwidth.
At present, research on expanding the working bandwidth of a programmable reflection array antenna is basically carried out based on single polarization, and research on dual polarization is mostly carried out based on frequency points, so that the working bandwidth is narrower. Therefore, how to extend the working bandwidth while maintaining the dual polarization function is a great difficulty in designing a broadband dual polarization programmable reflection array antenna.
Disclosure of Invention
In view of the foregoing, it is desirable to provide a broadband dual-polarized reflection unit and a programmable reflection antenna that can achieve dual polarization while increasing bandwidth.
A broadband dual polarized reflection unit comprising: the first dielectric layer, the second dielectric layer and the third dielectric layer are sequentially overlapped;
the top surface of the first medium layer is provided with a first radiation patch, and the top surface of the second medium layer is provided with a second radiation patch; the first radiation patch and the second radiation patch are both rectangular structures;
two microstrip lines and a direct current bias circuit are arranged on the bottom surface of the third dielectric layer;
one corresponding end of the two microstrip lines is respectively connected with two adjacent sides of the second radiation patch, the other corresponding end of the two microstrip lines is grounded, and each microstrip line is provided with a diode;
the direct current bias circuit is connected with the second radiation patch to control the on-off state of the diode, so that the diode works in an on or off state to realize x polarization or y polarization.
In one embodiment, the microstrip line includes a first portion connected to the second radiating patch and a second portion connected to ground;
the length of the first part is smaller than that of the second part, the width of the first part is equal to that of the second part, and the first part and the second part are mutually perpendicular to form an L-shaped structure;
the tip of the microstrip line faces the middle of the third dielectric layer.
In one embodiment, the second dielectric layer is further provided with two connection structures corresponding to the microstrip lines one by one; the connecting structure comprises a rectangular first connecting patch and a round second connecting patch;
one corresponding end of the first connecting patch is connected with one corresponding end of the second connecting patch, the other corresponding end of the first connecting patch is respectively connected with two adjacent sides of the second radiating patch, and the other corresponding end of the second connecting patch is respectively connected with the corresponding microstrip line.
In one embodiment, the diode is disposed on a second portion corresponding to the microstrip line, and a length direction of the first portion is parallel to a length direction of the first connection patch.
In one embodiment, the first radiation patch and the second radiation patch are both square structures, and the side length of the first radiation patch is smaller than the side length of the second radiation patch;
the direct current bias circuit is connected with the center of the second radiation patch, and the first connection patch is vertically arranged at the midpoint of the side length of the second radiation patch.
In one embodiment, the two microstrip lines are rotationally symmetric about the center of the third dielectric layer.
In one embodiment, an adhesive layer is disposed between the first dielectric layer and the second dielectric layer and between the second dielectric layer and the third dielectric layer;
the second radiation patch is arranged between an adhesive layer and the second dielectric layer;
a floor board is arranged between the other bonding layer and the third dielectric layer, and the other corresponding ends of the microstrip lines are connected with the floor board.
In one embodiment, the direct current bias circuit is connected with the second radiation patch through a first metal tube, the microstrip line is connected with the second radiation patch through a second metal tube, and the microstrip line is connected with the floor through a third metal tube;
the first metal tube, the second metal tube and the third metal tube are perpendicular to the third medium layer.
In one embodiment, the second medium layer and the third medium layer are respectively provided with a through hole corresponding to the first metal pipe and the second metal pipe, and the hole wall of the through hole corresponding to the floor is provided with an annular sinking groove serving as an isolating ring for isolating the first metal pipe from the floor and the second metal pipe from the floor.
A programmable reflector antenna comprising: a feed source and a plurality of broadband dual polarized reflection units;
the feed source and the broadband dual-polarized reflecting units are arranged at intervals;
the broadband dual-polarized reflecting units are distributed in a rectangular array, and each direct-current bias circuit is connected with a voltage source.
The broadband dual-polarized reflecting unit and the programmable reflecting antenna have the advantages that the first radiation patch and the first dielectric layer form the patch unit, the second radiation patch, the second dielectric layer, the third dielectric layer and the circuit control layer form the programmable unit (the dual-polarized programmable unit can be assembled to realize the programmable), the patch unit is overlapped on the top surface of the programmable unit to form a multi-layer structure, the bandwidth of the reflecting unit can be expanded, compared with the bandwidth of the dual-polarized reflecting unit in the prior art, which is generally only a plurality of frequency points, the working bandwidth of the broadband dual-polarized reflecting unit in the application is a continuous frequency band, the broadband dual-polarized reflecting unit has broadband characteristics, and meanwhile, the higher reflecting amplitude is kept. According to the method, two microstrip lines and corresponding diodes are arranged, the working states of the PIN diodes are controlled, the x polarization and the y polarization are achieved, and the polarization reconfigurable effect is achieved. In the working frequency band, the reflecting unit and the antenna have dual polarization characteristics and can radiate x polarized waves and y polarized waves. In addition, the working state of the broadband dual-polarized reflecting unit can be reconstructed by controlling the PIN diode through the direct-current bias circuit, so that the direction of a radiation beam can be reconstructed when the reflecting unit forms an array, the function of beam scanning is realized, the beam scanning range is +/-60 degrees, the radiation beam can be reconstructed, the effect of reconstructing a directional diagram is achieved, and the flexibility is high.
Drawings
Fig. 1 is a schematic perspective view of a broadband dual polarized reflection unit in one embodiment;
FIG. 2 is a schematic diagram of a patch unit and a programmable unit according to one embodiment, wherein (a) is a schematic diagram of the patch unit and (b) is a schematic diagram of the programmable unit;
FIG. 3 is a schematic diagram of a second dielectric layer and a schematic diagram of a circuit control layer according to an embodiment, wherein (a) is a schematic diagram of the second dielectric layer and (b) is a schematic diagram of the circuit control layer;
FIG. 4 is a graph of the reflection phase frequency of a programmable cell in the "0" and "1" states when an x-polarized wave or a y-polarized wave is incident in one embodiment;
FIG. 5 is a graph of reflected amplitude versus frequency for a programmable cell in the "0" and "1" states when an x-polarized wave or a y-polarized wave is incident in one embodiment;
FIG. 6 is a graph of reflected phase frequency of a broadband dual polarized reflection unit in the "0" and "1" states when an x polarized wave or a y polarized wave is incident in one embodiment;
FIG. 7 is a graph of reflected amplitude-frequency of a broadband dual polarized reflection unit in the "0" and "1" states when an x polarized wave or a y polarized wave is incident in one embodiment;
FIG. 8 is a schematic diagram of a programmable reflector antenna in one embodiment;
fig. 9 is a radiation pattern of the programmable reflection antenna at f=10 ghz, where x polarized waves are incident, and the pattern directions are (0 ° ), (10 °,0 °), (20 °,0 °), (30 °,0 °), (40 °,0 °), (50 °,0 °), (60 °,0 °);
fig. 10 is a radiation pattern of the programmable reflection antenna at f=10ghz, with the y polarized wave incident, the pattern directions being (0 ° ), (10 °,0 °), (20 °,0 °), (30 °,0 °), (40 °,0 °), (50 °,0 °), (60 °,0 °);
fig. 11 is a graph of gain in the 7-12GHz band for a programmable reflector antenna pattern of one embodiment at (0 deg. ).
Reference numerals:
a first dielectric layer 11, a second dielectric layer 12, a third dielectric layer 13, an adhesive layer 14, and a floor 15;
a first radiating patch 21, a second radiating patch 22;
a microstrip line 31, a first portion 311, a second portion 312, a diode 32, and a dc bias circuit 33;
a first connection patch 41, a second connection patch 42;
a first metal tube 51, a second metal tube 52, a third metal tube 53, and a spacer 54.
A feed source A, a dual polarized broadband reflection array B, an x or y polarized incident wave C and an x or y polarized reflected wave D.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the present application are merely used to explain the relative positional relationship, movement, etc. between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indicator is correspondingly changed.
In addition, descriptions such as those related to "first," "second," and the like, are provided for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated in this application. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, "plurality of sets" means at least two sets, e.g., two sets, three sets, etc., unless specifically defined otherwise.
In the present application, unless explicitly specified and limited otherwise, the terms "coupled," "secured," and the like are to be construed broadly, and for example, "secured" may be either permanently attached or removably attached, or integrally formed; the device can be mechanically connected, electrically connected, physically connected or wirelessly connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.
In addition, the technical solutions of the embodiments of the present application may be combined with each other, but it is necessary to be based on the fact that those skilled in the art can implement the technical solutions, and when the technical solutions are contradictory or cannot be implemented, the combination of the technical solutions should be considered to be absent, and is not within the scope of protection claimed in the present application.
The present application provides a broadband dual polarized reflection unit, as shown in fig. 1 to 3, comprising, in one embodiment: the first dielectric layer 11, the second dielectric layer 12 and the third dielectric layer 13 are sequentially stacked.
The top surface of the first dielectric layer 11 is provided with a first radiation patch 21, and the top surface of the second dielectric layer 12 is provided with a second radiation patch 22; the first radiation patch 21 and the second radiation patch 22 are rectangular structures, and the central connecting lines of the first radiation patch 21 and the second radiation patch 22 are arranged along the vertical direction.
The top surface of the third dielectric layer 13 is provided with a floor 15, and the bottom surface of the third dielectric layer 13 is provided with a circuit control layer, wherein the circuit control layer comprises two microstrip lines 31 with identical shapes and sizes and a direct current bias circuit 33.
One corresponding end of the two microstrip lines 31 is respectively connected with two adjacent edges of the second radiation patch 22, and the other corresponding end is connected with the floor 15; each microstrip line is provided with a diode 32, in particular a PIN diode.
The dc bias circuit 33 is connected to the second radiation patch 22 to control on/off of the diode 32, so that the diode 32 works in an on or off state to realize x-polarization or y-polarization. The DC bias circuit comprises a fan-shaped branch and a DC line, and the DC line is connected with a voltage source to obtain DC voltage.
The adhesive layers 14 are disposed between the first dielectric layer 11 and the second dielectric layer 12 and between the second dielectric layer 12 and the third dielectric layer 13; a second radiation patch 21 is arranged between one adhesive layer 14 and the second dielectric layer 12 and a floor 15 is arranged between the other adhesive layer 14 and the third dielectric layer 13.
The direct current bias circuit 33 is connected with the second radiation patch 22 through the first metal tube 51, the microstrip line 31 is connected with the second radiation patch 22 through the second metal tube 52, and the microstrip line 31 is connected with the floor 15 through the third metal tube 53; the first metal pipe 51, the second metal pipe 52 and the third metal pipe 53 are perpendicular to the third dielectric layer 13.
The second dielectric layer 12 and the third dielectric layer 13 are respectively provided with a through hole corresponding to the first metal tube 51 and the second metal tube 52, and the hole wall of the through hole corresponding to the floor 15 is provided with an annular sinking groove serving as an isolating ring 54 for isolating the first metal tube 51 from the floor 15 and the second metal tube 52 from the floor 15. That is, the first metal tube 51 passes through the isolation ring 54 to connect the second radiation patch 22 and the dc bias circuit 33, and the second metal tube 52 passes through the isolation ring 54 to connect the second radiation patch 22 and the microstrip line 31.
In this embodiment, a resistor of 5.2 Ω is connected in series with an inductor of 30pH when the PIN diode is on, and a capacitor of 0.025pF is connected in series with an inductor of 30pH when the PIN diode is off.
When the x-polarized wave or the y-polarized wave irradiates the surface of the broadband dual-polarized reflecting unit, if the diodes in the same polarization direction are turned on, the broadband dual-polarized reflecting unit exhibits a corresponding polarization state.
Specifically:
when the x polarized wave irradiates the surface of the broadband dual polarized reflecting unit, if the diode in the x direction is on and the diode in the y direction is off, the broadband dual polarized reflecting unit is in the x polarization and in the 1 state;
when the x polarized wave irradiates the surface of the broadband dual polarized reflecting unit, if the diode in the x direction is cut off and the diode in the y direction is conducted, the broadband dual polarized reflecting unit is in x polarization and in a 0 state;
when the y polarized wave irradiates the surface of the broadband dual polarized reflecting unit, if the diode in the x direction is on and the diode in the y direction is off, the broadband dual polarized reflecting unit is in y polarization and is in a 0 state;
when the y polarized wave irradiates the surface of the broadband dual polarized reflecting unit, if the diode in the x direction is turned off and the diode in the y direction is turned on, the broadband dual polarized reflecting unit is represented as y polarized and is in a "1" state.
Above-mentioned broadband dual polarized reflection unit, first radiation paster and first dielectric layer constitute the paster unit, the second radiation paster, the second dielectric layer, third dielectric layer and circuit control layer constitute programmable unit (also dual polarized programmable unit, can the group array realize programmable), the paster unit stacks the top surface at programmable unit and forms multilayer structure, can extend the bandwidth of reflection unit, compare the bandwidth that dual polarized reflection unit generally has only a few frequency points in the prior art, the operating bandwidth of broadband dual polarized reflection unit is a continuous frequency channel in this application, have broadband characteristic, simultaneously, keep higher reflection amplitude. According to the method, two microstrip lines and corresponding diodes are arranged, the working states of the PIN diodes are controlled, the x polarization and the y polarization are achieved, and the polarization reconfigurable effect is achieved. In the working frequency band, the reflecting unit and the antenna have dual polarization characteristics and can radiate x polarized waves and y polarized waves. In addition, the working state of the broadband dual-polarized reflecting unit can be reconstructed by controlling the PIN diode through the direct-current bias circuit, so that the direction of a radiation beam can be reconstructed when the reflecting unit forms an array, the function of beam scanning is realized, the beam scanning range is +/-60 degrees, the radiation beam can be reconstructed, the effect of reconstructing a directional diagram is achieved, and the flexibility is high.
Preferably, the first radiation patch 21 and the second radiation patch 22 are square structures, and the side length of the first radiation patch 21 is smaller than the side length of the second radiation patch 22, so as to balance dual polarization performance and improve reflection efficiency.
The microstrip line 31 is connected to the midpoint of the side length of the second radiation patch 22, and the two microstrip lines are rotationally symmetrical about the center of the third dielectric layer, specifically, the two microstrip lines are rotationally orthogonal, that is, one microstrip line is obtained by rotating the other microstrip line by 90 ° about the center of the third dielectric layer, so as to improve the reflection coefficient, the reflection amplitude and the reflection efficiency; the microstrip line 31 includes a first portion 311 and a second portion 312; the first portion 311 is connected to the second radiating patch 22 and the second portion 312 is grounded; the length of the first portion 311 is smaller than the length of the second portion 312, and the width of the first portion 311 is equal to the width of the second portion 312; the first portion 311 and the second portion 312 are disposed perpendicular to each other to form an "L" structure, so as to further improve reflection efficiency, and a tip of the "L" structure faces a middle direction of the third dielectric layer.
A dc bias circuit 33 is connected to the center of the second radiating patch 22.
Two connecting structures corresponding to the two microstrip lines one by one are further arranged on the second dielectric layer 12 so as to play a role in drainage; the connection structure includes a rectangular first connection patch 41 and a circular second connection patch 42; one corresponding end of the first connection patch 41 is connected with one corresponding end of the second connection patch 42, the other corresponding end of the first connection patch 41 is vertically arranged at the middle point of two adjacent sides of the second radiation patch 22, and the other corresponding end of the second connection patch 42 is connected with the corresponding microstrip line 31.
The diode 32 is arranged on the second portion 312 of the corresponding microstrip line 31, so that the second portion 312 is fully involved in radiation when the diode 32 is turned on and only partially involved in resonance when the diode 32 is turned off, and therefore the reflecting unit has two working states, the reflecting unit state can be reconstructed, and the dual polarization performance is optimized; the length direction of the first part is parallel to the length direction of the corresponding first connecting patch.
The working procedure of this embodiment is: electromagnetic signals are beaten on the broadband dual-polarized reflecting unit, the first radiation patch receives the signals and is coupled to the second radiation patch, and the signals are led to the microstrip line through the connecting patch; the direct current bias circuit sequentially passes through the second radiation patch and the connection patch and then reaches the microstrip line so as to control the on and off states of the diode and form a complete loop through grounding.
The embodiment can realize wider bandwidth and better dual polarization performance. The L-shaped microstrip line further expands the bandwidth, the working bandwidth of the dual-polarized reflection unit is 7.5-11.5GHz, the bandwidth of the dual-polarized reflection unit is increased to about 40%, the broadband characteristics are achieved, and meanwhile, the higher reflection amplitude is maintained. In addition, the array antenna formed by the dual-polarized reflection units has dual-polarized characteristics and broadband characteristics, can keep higher gain, has a 3-dB gain bandwidth of more than 40% under the incident wave of x polarization and the incident wave of y polarization, and has the maximum gain of 19.8dBi and 20.1dBi. It is also required to explain that this application has adopted the microstrip line of non-axisymmetric "L" shape structure, with first connection paster and second connection paster coaction, polarization is sensitive, and the directional drainage of boundary just adopts a direct current bias circuit and two PIN diodes just has realized that polarization is selectable reconfigurable.
In a specific embodiment, the first radiation patch, the second radiation patch, the floor and the circuit control layer are all made of metal materials; the first dielectric layer, the second dielectric layer and the third dielectric layer are made of AD255C, have dielectric constants of 2.55, are square structures with side lengths of 11.5mm, and have thicknesses of 1.524mm, 1.524mm and 0.508mm respectively; the two bonding layers are prepregs for bonding the first dielectric layer and the second dielectric layer and bonding the second dielectric layer and the third dielectric layer, and are made of FR-28, have a dielectric constant of 2.74 and a thickness of 0.1mm; the first radiation patch is of a square structure with a side length of 6.5mm, and the second radiation patch is of a square structure with a side length of 7.6 mm; the radius of the isolating ring corresponding to the first metal tube is 0.3mm, and the radius of the two isolating rings corresponding to the second metal tube is 0.6mm.
The electromagnetic simulation software CST is used for simulating the programmable unit and the broadband dual-polarized reflection unit, and the structural parameters of the programmable unit and the broadband dual-polarized reflection unit are analyzed and researched, so that the following results are obtained.
Fig. 4 and 5 show the reflection phase frequency curve and the reflection amplitude frequency curve of the programmable unit in different states when the x polarized wave or the y polarized wave is incident.
As shown in fig. 4, the reflection phase frequency curves of the dual polarization programmable unit in the two states of "0" and "1" and the phase difference curves in the two states are given when the x or y polarized wave is incident. At three frequency points of 7.45GHz, 9.5GHz and 11.6GHz, the absolute value of the reflection phase difference between the 1 state and the 0 state of the programmable unit is 180 degrees, and the antenna is a three-frequency-point dual-polarized programmable antenna.
As shown in fig. 5, a graph of the reflected amplitude-frequency of a dual polarized programmable cell in the "0" and "1" states when either an x or y polarized wave is incident is given. At three frequency points of 7.45GHz, 9.5GHz and 11.6GHz, the reflection amplitude of the dual-polarized programmable unit in the '1' state and the '0' state is more than-1.8 dB.
Fig. 6 and 7 show the reflection phase frequency curve and the reflection amplitude frequency curve of the broadband dual-polarized reflection unit in different states when the x polarized wave or the y polarized wave is incident. The diode on the microstrip line of the first part vertical DC line is used as a first PIN diode, and the diode on the microstrip line of the first part parallel DC line is used as a second PIN diode.
When the x polarized wave is incident, the first PIN diode is turned on, the second PIN diode is turned off, and the first PIN diode is turned off, and the second PIN diode is turned on, and the first PIN diode is in a '1' state of the x polarization of the unit, and the second PIN diode is in a '0' state of the x polarization of the unit.
When the y polarized wave is incident, the second PIN diode is conducted, the first PIN diode is cut off and is in a '1' state of the y polarization of the unit, the second PIN diode is cut off, and the first PIN diode is conducted and is in a '0' state of the y polarization of the unit.
Since the "1" state of the x-polarized wave incident unit is the "0" state of the y-polarized wave incident unit, and the "0" state of the x-polarized wave incident unit is the "1" state of the y-polarized wave incident unit, the reflection phase frequency curve of the "1" state of the x-polarized wave incident unit coincides with the reflection amplitude frequency curve of the "0" state of the y-polarized wave incident unit, and the reflection phase frequency curve of the "0" state of the x-polarized wave incident unit coincides with the reflection amplitude frequency curve of the "1" state of the y-polarized wave incident unit, that is, the reflection phase frequency curve of the x-polarized wave incident unit coincides with the reflection phase frequency curve of the y-polarized wave incident unit, and the reflection amplitude frequency curves coincide in the same manner.
Therefore, the polarization characteristic of the broadband dual polarized reflection unit itself may be different from the polarization characteristic finally exhibited, and the polarization characteristic finally exhibited by the broadband dual polarized reflection unit is determined by the polarization characteristic of the incident wave. For example, when x-polarization is incident, it does not appear, although it has the property of y-polarization, but only when y-polarization is incident.
As shown in fig. 6, a reflection phase frequency curve of the broadband dual polarized reflection unit in the "0" and "1" states and a phase difference value curve in the two states are given when an x or y polarized wave is incident. In the range of 7.5-11.5GHz, the absolute value of the reflection phase difference between the state of '1' and the state of '0' of the broadband dual-polarized reflection unit is (180+/-20), and the broadband dual-polarized reflection unit has broadband characteristics and has a relative bandwidth of 42%.
As shown in fig. 7, a graph of reflection amplitude and frequency of the broadband dual polarized reflection unit in the "0" and "1" states when an x or y polarized wave is incident is given. In the range of 7.5-11.5GHz, the reflection amplitude of the broadband dual-polarized reflection unit in the state of 1 and the reflection amplitude of the broadband dual-polarized reflection unit in the state of 0 are both above-1.6 dB, and the reflection loss of the broadband dual-polarized reflection unit is small.
The present application also provides a programmable reflector antenna, comprising, in one embodiment: a feed source A and a plurality of broadband dual-polarized reflecting units; the feed source A is arranged at intervals with a plurality of broadband dual-polarized reflecting units, the broadband dual-polarized reflecting units are distributed in a rectangular array to form a dual-polarized broadband reflecting array B, and each direct-current bias circuit is connected with a voltage source.
According to the programmable reflection antenna, the working state of the broadband dual-polarized reflection unit can be reconstructed by controlling the working state of the diode, so that the direction of a radiation beam is reconstructed, the function of beam scanning in the horizontal direction and the vertical direction is guaranteed, and the beam scanning range is +/-60 degrees; meanwhile, the working bandwidth of the antenna is 7.5-11.5GHz, and the antenna has broadband characteristics; the broadband dual-polarized reflection unit and the programmable reflection antenna have excellent performance and have great application potential and popularization value in the scenes of radar detection, satellite navigation, mobile communication and the like.
As shown in fig. 8, in a specific embodiment, the programmable reflection antenna includes a feed source a and 196 broadband dual-polarized reflection units distributed in a square array, where the feed source a adopts a standard gain horn antenna, the horn antenna works in an X-band, the programmable reflection antenna works in a secondary radiation mode, and when the feed source emits electromagnetic waves (X-polarized or y-polarized incident waves C) to irradiate the surface of the array, the antenna can radiate the electromagnetic waves (X-polarized or y-polarized reflected waves D) outwards after receiving the electromagnetic waves.
Simulation analysis was performed on the programmable reflection antenna using electromagnetic simulation software CST, with the following results.
Fig. 9 and 10 show radiation patterns of radiation x-polarized wave and y-polarized wave at f=10 GHz, the pattern directions being (0 ° ), (10 °,0 °), (20 °,0 °), (30 °,0 °), (40 °,0 °), (50 °,0 °), (60 °,0 °) respectively, with a step of 10 °. The antenna can radiate directional beams, beam deflection can be realized by reconstructing the distribution of broadband dual-polarized reflection units on the surface of the array, and the antenna has good beam reconstruction characteristics. In summary, the antenna can not only perform beam scanning, but also radiate x-polarized waves and y-polarized waves.
In the same encoding state, x-polarized waves and y-polarized waves of the same angle are radiated. Since the x-polarized wave and the y-polarized wave are irradiated in opposite states from each other, the gains of different polarized beams at the same angle are different.
Fig. 11 shows a gain diagram when the antenna radiates x-polarized waves and y-polarized waves in the 7-12GHz band. Wherein the radiation beam direction is (0 ° ). The differences between the maximum and minimum gains of the x-polarized radiation beam and the y-polarized radiation beam are all less than 3dBi within 7.5-11.5GHz, and the x-polarized maximum gain is 19.8dBi and the y-polarized maximum gain is 20.1dBi, thus the 3-dB gain bandwidth is greater than 40%, indicating that the antenna has broadband characteristics.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples only represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the present application. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (10)
1. A broadband dual polarized reflection unit, comprising: the first dielectric layer, the second dielectric layer and the third dielectric layer are sequentially overlapped;
the top surface of the first medium layer is provided with a first radiation patch, and the top surface of the second medium layer is provided with a second radiation patch; the first radiation patch and the second radiation patch are both rectangular structures;
two microstrip lines and a direct current bias circuit are arranged on the bottom surface of the third dielectric layer;
one corresponding end of the two microstrip lines is respectively connected with two adjacent sides of the second radiation patch, the other corresponding end of the two microstrip lines is grounded, and each microstrip line is provided with a diode;
the direct current bias circuit is connected with the second radiation patch to control the on-off state of the diode, so that the diode works in an on or off state to realize x polarization or y polarization.
2. The broadband dual polarized reflection unit of claim 1, wherein the microstrip line comprises a first portion connected to the second radiating patch and a second portion grounded;
the length of the first part is smaller than that of the second part, the width of the first part is equal to that of the second part, and the first part and the second part are mutually perpendicular to form an L-shaped structure;
the tip of the microstrip line faces the middle of the third dielectric layer.
3. The broadband dual-polarized reflection unit according to claim 2, wherein two connection structures corresponding to the microstrip lines one by one are further arranged on the second dielectric layer; the connecting structure comprises a rectangular first connecting patch and a round second connecting patch;
one corresponding end of the first connecting patch is connected with one corresponding end of the second connecting patch, the other corresponding end of the first connecting patch is respectively connected with two adjacent sides of the second radiating patch, and the other corresponding end of the second connecting patch is respectively connected with the corresponding microstrip line.
4. A broadband dual polarized reflection unit according to claim 3, wherein the diode is provided on a second portion corresponding to the microstrip line, and a length direction of the first portion is parallel to a length direction corresponding to the first connection patch.
5. The broadband dual polarized reflection unit of claim 4, wherein the first radiation patch and the second radiation patch are square structures, and a side length of the first radiation patch is smaller than a side length of the second radiation patch;
the direct current bias circuit is connected with the center of the second radiation patch, and the first connection patch is vertically arranged at the midpoint of the side length of the second radiation patch.
6. The broadband dual polarized reflection unit according to claim 5, wherein two of the microstrip lines are rotationally symmetric about a center of the third dielectric layer.
7. The broadband dual polarized reflection unit according to any one of claims 1 to 6, wherein an adhesive layer is provided between the first dielectric layer and the second dielectric layer and between the second dielectric layer and the third dielectric layer;
the second radiation patch is arranged between an adhesive layer and the second dielectric layer;
a floor board is arranged between the other bonding layer and the third dielectric layer, and the other corresponding ends of the microstrip lines are connected with the floor board.
8. The broadband dual polarized reflection unit according to claim 7, wherein the direct current bias circuit is connected to the second radiation patch through a first metal pipe, the microstrip line is connected to the second radiation patch through a second metal pipe, and the microstrip line is connected to the floor through a third metal pipe;
the first metal tube, the second metal tube and the third metal tube are perpendicular to the third medium layer.
9. The broadband dual-polarized reflection unit according to claim 8, wherein the second dielectric layer and the third dielectric layer are respectively provided with a through hole corresponding to the first metal tube and the second metal tube, and the hole wall of the through hole corresponding to the floor is provided with an annular sinking groove serving as an isolation ring for isolating the first metal tube from the floor and the second metal tube from the floor.
10. A programmable reflector antenna comprising: a feed source and a plurality of broadband dual polarized reflective elements according to any one of claims 1 to 9;
the feed source and the broadband dual-polarized reflecting units are arranged at intervals;
the broadband dual-polarized reflecting units are distributed in a rectangular array, and each direct-current bias circuit is connected with a voltage source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310422108.9A CN116154468B (en) | 2023-04-19 | 2023-04-19 | Broadband dual-polarized reflection unit and programmable reflection antenna |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310422108.9A CN116154468B (en) | 2023-04-19 | 2023-04-19 | Broadband dual-polarized reflection unit and programmable reflection antenna |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116154468A CN116154468A (en) | 2023-05-23 |
| CN116154468B true CN116154468B (en) | 2023-06-16 |
Family
ID=86350995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310422108.9A Active CN116154468B (en) | 2023-04-19 | 2023-04-19 | Broadband dual-polarized reflection unit and programmable reflection antenna |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116154468B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116805764B (en) * | 2023-08-22 | 2023-11-24 | 湖南大学 | Dual-frenquency transmission unit and transmission array antenna |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5511238A (en) * | 1987-06-26 | 1996-04-23 | Texas Instruments Incorporated | Monolithic microwave transmitter/receiver |
| CN113113774A (en) * | 2020-12-04 | 2021-07-13 | 西安电子科技大学 | Broadband beam scanning reflective array antenna |
| CN113644449A (en) * | 2021-07-04 | 2021-11-12 | 南京理工大学 | Broadband reconfigurable frequency selection surface based on single-side loaded PIN diode |
| CN115117615A (en) * | 2022-07-26 | 2022-09-27 | 电子科技大学 | Double-circular-polarization flat-plate electric scanning antenna based on 2bit phase digitization |
| WO2023016180A1 (en) * | 2021-08-13 | 2023-02-16 | 中兴通讯股份有限公司 | Reconfigurable antenna and control method therefor, and router and signal transceiving device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201411938A (en) * | 2012-09-07 | 2014-03-16 | Hon Hai Prec Ind Co Ltd | Dual-band and dual-polarization antenna |
| KR101982028B1 (en) * | 2012-09-21 | 2019-05-24 | 가부시키가이샤 무라타 세이사쿠쇼 | Dual-polarized antenna |
| US9520655B2 (en) * | 2014-05-29 | 2016-12-13 | University Corporation For Atmospheric Research | Dual-polarized radiating patch antenna |
| CN105720364B (en) * | 2016-04-06 | 2019-03-05 | 华南理工大学 | It is a kind of with highly selective and low-cross polarization dual polarization filter antenna |
| CN109935964B (en) * | 2017-12-15 | 2021-04-09 | 华为技术有限公司 | Antenna unit and antenna array |
| GB201811092D0 (en) * | 2018-07-05 | 2018-08-22 | Npl Management Ltd | Reflectarray antenna element |
-
2023
- 2023-04-19 CN CN202310422108.9A patent/CN116154468B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5511238A (en) * | 1987-06-26 | 1996-04-23 | Texas Instruments Incorporated | Monolithic microwave transmitter/receiver |
| CN113113774A (en) * | 2020-12-04 | 2021-07-13 | 西安电子科技大学 | Broadband beam scanning reflective array antenna |
| CN113644449A (en) * | 2021-07-04 | 2021-11-12 | 南京理工大学 | Broadband reconfigurable frequency selection surface based on single-side loaded PIN diode |
| WO2023016180A1 (en) * | 2021-08-13 | 2023-02-16 | 中兴通讯股份有限公司 | Reconfigurable antenna and control method therefor, and router and signal transceiving device |
| CN115117615A (en) * | 2022-07-26 | 2022-09-27 | 电子科技大学 | Double-circular-polarization flat-plate electric scanning antenna based on 2bit phase digitization |
Non-Patent Citations (1)
| Title |
|---|
| 一种双频四模极化可重构天线;孙胜1，王世通2，孙虎成3;《电子学报》;1-9 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116154468A (en) | 2023-05-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4812855A (en) | Dipole antenna with parasitic elements | |
| CN106450690B (en) | Low profile overlay antenna | |
| US6642898B2 (en) | Fractal cross slot antenna | |
| KR100526585B1 (en) | Planar antenna with circular and linear polarization. | |
| CN110190408B (en) | Circularly polarized electromagnetic dipole array antenna | |
| CN112952374B (en) | Ferrite-loaded dual-polarized low-profile strong-coupling ultra-wideband phased array antenna | |
| US7283102B2 (en) | Radial constrained lens | |
| US8830135B2 (en) | Dipole antenna element with independently tunable sleeve | |
| EP3311449A2 (en) | Efficient planar phased array antenna assembly | |
| EP2827450B1 (en) | Dual antenna apparatus | |
| CN114267952B (en) | 1bit dual-polarization digital coding unit and beam scanning array antenna system | |
| JP2000514614A (en) | Dual frequency planar array antenna | |
| CN115966895B (en) | One-bit broadband programmable subsurface unit and multi-beam array antenna | |
| CN116154468B (en) | Broadband dual-polarized reflection unit and programmable reflection antenna | |
| CN115579649A (en) | Two-dimensional wide-angle scanning programmable bit array antenna with low cost and low profile | |
| EP3154126A1 (en) | Ground phase manipulation in a beam forming antenna | |
| CN114899589A (en) | Super-surface antenna with dual modulation characteristics and programmable array antenna system | |
| CN116231301B (en) | Double-feed programmable unit and reflected radiation single-dual-beam scanning array antenna | |
| CN116805764B (en) | Dual-frenquency transmission unit and transmission array antenna | |
| CN116598793A (en) | Polarization rotation unit and wave beam reconfigurable array antenna | |
| CN109524799B (en) | Directional diagram scanning patch antenna loaded with variable capacitance diode | |
| US6930647B2 (en) | Semicircular radial antenna | |
| RU2335834C1 (en) | Super wide band transceiver antenna | |
| KR102039398B1 (en) | Integrated Antenna Operating in Multiple Frequency Bands | |
| CN113410628B (en) | Broadband high-efficiency antenna unit, series-parallel feed sub-array and phased array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |