CN218039769U - Frequency and amplitude independent adjustable substrate integrated waveguide filter - Google Patents
Frequency and amplitude independent adjustable substrate integrated waveguide filter Download PDFInfo
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- CN218039769U CN218039769U CN202222246126.XU CN202222246126U CN218039769U CN 218039769 U CN218039769 U CN 218039769U CN 202222246126 U CN202222246126 U CN 202222246126U CN 218039769 U CN218039769 U CN 218039769U
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Abstract
A frequency and amplitude independent adjustable substrate integrated waveguide filter comprises an upper metal layer, a dielectric substrate and a lower metal layer which are sequentially arranged from top to bottom; a metalized through hole array vertically penetrates through the medium substrate, a plurality of resonant cavities which are linearly arranged are formed through the metalized through hole array, a perturbation metalized through hole is arranged at the center of each resonant cavity, two adjacent resonant cavities are mutually coupled through an inductive coupling groove, and the metalized through hole array and the perturbation metalized through holes are communicated with the upper metal layer and the lower metal layer; the upper metal layer is provided with an annular groove corresponding to the center of each resonant cavity, and each annular groove is provided with an adjustable variable capacitance tube group; an input/output feed port is arranged on the lower metal layer, and an annular graphene layer is arranged at the position of the lower metal layer corresponding to the annular groove. The utility model discloses can guarantee the independent tune of sheet resistance value of the capacitance value of adjustable varactor and graphite alkene to realized the independent regulation and control of frequency and transmission amplitude, each other does not influence.
Description
Technical Field
The utility model belongs to the technical field of the integrated waveguide of substrate, concretely relates to frequency and independent adjustable integrated waveguide filter of substrate of range.
Background
Bandpass filters and attenuators are key components in achieving frequency selection and amplitude control in radar and wireless communication systems, respectively. Bandpass filters and attenuators are typically cascaded to achieve bandpass filtering and attenuation responses in the system, however, no device currently provides filtering and attenuation functions that are simultaneously reconfigurable. Patent CN108808190a discloses an electromagnetic two-dimensional reconfigurable filter with adjustable frequency bandwidth, which adjusts the working frequency of each resonant cavity by loading an adjustable capacitor in a substrate integrated waveguide resonant cavity, and intuitively controls the coupling strength between the substrate integrated waveguide resonant cavities by loading a ferrite material at the coupling window of the substrate integrated waveguide filter, thereby realizing the reconfigurable central frequency and bandwidth of the filter, but the transmission amplitude can not be reconfigured.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to the problem among the above-mentioned prior art, provide an integrated waveguide filter of substrate that frequency and range are independent adjustable, realize that the central frequency and the transmission amplitude homoenergetic of wave filter are harmonious, and the tuning mode is independent mutually.
In order to achieve the above object, the present invention provides the following technical solutions:
a frequency and amplitude independent adjustable substrate integrated waveguide filter comprises an upper metal layer, a dielectric substrate and a lower metal layer which are sequentially arranged from top to bottom; a plurality of metalized through holes are vertically arranged on the medium substrate in a penetrating manner to form a metalized through hole array, a plurality of resonant cavities which are linearly arranged are formed through the metalized through hole array, a perturbation metalized through hole is arranged at the center of each resonant cavity, two adjacent resonant cavities are mutually coupled through an inductive coupling groove, and the metalized through hole array and the perturbation metalized through holes are communicated with the upper metal layer and the lower metal layer; an annular groove is formed in the upper metal layer corresponding to the center of each resonant cavity, an adjustable variable capacitance tube group is arranged on each annular groove, one end of each variable capacitance tube in each adjustable variable capacitance tube group is connected with the upper metal layer on the outer side of the annular groove, and the other end of each variable capacitance tube in each adjustable variable capacitance tube group is connected with the upper metal layer on the inner side of the annular groove and connected to the lower metal layer through a perturbation metallization through hole; and an input/output feed port is arranged on the lower metal layer, and an annular graphene layer is arranged at the position of the lower metal layer, which corresponds to the annular groove.
As a preferable scheme, the number of the resonant cavities is three, the three resonant cavities are circular with the same size, the centers of the three resonant cavities are on a straight line, two adjacent resonant cavities are intersected, and the three resonant cavities are in mirror symmetry with respect to the central line of the middle resonant cavity.
As a preferable scheme, two input/output feed ports are arranged along a straight line and are respectively connected to two resonant cavities at two ends;
the input and output feed port comprises a grounding coplanar waveguide and an arc short circuit slot line which are connected with each other;
the arc short circuit slot lines of the two input and output feed ports are respectively surrounded outside the two annular graphene layers, and the grounded coplanar waveguides of the two input and output feed ports lead the arc short circuit slot lines to the edges of the two sides of the lower metal layer; the dielectric substrate is opened at the position where the resonant cavity correspondingly passes through the grounded coplanar waveguide, and metallized through holes are arranged on two sides of the grounded coplanar waveguide and connected with the metallized through hole array.
As a preferred scheme, the two input/output feed ports are led out from the middle points of the side walls of the two resonant cavities, and the structures of the two input/output feed ports are in mirror symmetry; the arc short circuit slot line is formed by continuous curves or by splicing a plurality of sections of straight lines.
As a preferable scheme, the inductive coupling grooves are respectively arranged at the intersection positions of two adjacent resonant cavities, and each inductive coupling groove is composed of two sections of arc-shaped grooves extending to the two adjacent resonant cavities and a section of rectangular groove connected between the two sections of arc-shaped grooves.
As a preferable scheme, the arc-shaped groove is formed by continuous curves or formed by splicing a plurality of sections of straight lines.
Preferably, the annular groove at the center of each resonant cavity is concentric with the perturbation metallization via at the center of each resonant cavity.
Preferably, the adjustable varactor group is composed of a plurality of varactors with the same type.
As a preferred scheme, an annular slotted gap is formed in the position, corresponding to the annular groove, of the lower metal layer, the annular graphene layer is placed in the annular slotted gap, the shape of the annular graphene layer is matched with that of the annular slotted gap, and the thickness of the annular graphene layer is the same as that of the lower metal layer; the shape of the annular slotting gap is square, rectangular or circular, and the annular groove of the upper metal layer is correspondingly the same as the annular slotting gap of the lower metal layer.
Compared with the prior art, the utility model discloses following beneficial effect has at least:
a plurality of metalized through holes are vertically arranged on a medium substrate in a penetrating mode to form a metalized through hole array, a plurality of resonant cavities which are arranged in a linear mode are formed through the metalized through hole array, an annular groove is formed in the position, corresponding to the center of each resonant cavity, of an upper metal layer, an adjustable variable-capacitance pipe group is arranged on each annular groove, and an annular graphene layer is arranged at the position, corresponding to the annular groove, of a lower metal layer. The utility model discloses an adopt two kinds of electricity reconfigurable devices in the integrated waveguide filter of substrate, the filter that frequency and transmission range all can be regulated and control has been realized along with the characteristics that plus bias voltage intensity and change to the adjustable and graphene materials's of capacitance value of using adjustable varactor, sheet resistance. Through using two kinds of independent control circuit, the utility model discloses can guarantee the capacitance value of adjustable varactor and the independent tunning of sheet resistance value of graphite alkene to realized the independent regulation and control of frequency and transmission range, each other does not influence. The utility model discloses with two kinds of frequency tunable filtering function and the tunable attenuation function integration of range in a device, realized the high integration and the miniaturization of device. The utility model is suitable for a PCB plane processing technology, the planarization of the high selectivity tunable filter of being convenient for, integrate.
Drawings
Fig. 1 is a schematic diagram of a three-dimensional structure of a substrate integrated waveguide filter with independently adjustable frequency and amplitude according to an embodiment of the present invention;
fig. 2 is a top view of an upper metal layer of an integrated waveguide filter with independently adjustable frequency and amplitude according to an embodiment of the present invention;
fig. 3 is a top view of a lower metal layer of an integrated waveguide filter with independently adjustable frequency and amplitude according to an embodiment of the present invention;
fig. 4 shows a simulation curve of return loss | S11| with constant graphene sheet resistance and adjusted center frequency;
fig. 5 shows a transmission characteristic | S21| simulation curve of graphene sheet resistance with constant center frequency adjustment;
fig. 6 shows transmission characteristic | S21| simulation curves of transmission amplitude adjustment at three central frequencies;
in the drawings: 1-upper metal layer; 2-a dielectric substrate; 3-lower metal layer; 4-an adjustable varactor group; 5-a ring-shaped graphene layer; 6-an array of metallized vias; 7-a first resonant cavity; 8-a second resonant cavity; 9-a third resonant cavity; 10-perturbation metallization of through holes; 11-an annular groove; 12-a first inductive coupling slot; 13-a second inductive coupling slot; 14-a rectangular groove; 15-arc-shaped grooves; 16-input-output feed port; 17-a grounded coplanar waveguide; 18-arc short-circuit slot line.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Tunable rf front-ends are gaining increasing attention in order to meet the ever-evolving modern wireless communication requirements, and due to the high integration required, can replace numerous fixed devices, thereby significantly saving installation and space. The frequency-adjustable substrate integrated waveguide resonator is widely applied to filter design due to compact structure and adjustable frequency, and a perturbation metalized through hole is introduced into the center of the substrate integrated waveguide resonant cavity to realize a more compact structure which is convenient for loading an adjustable lumped element. The major advantage of the substrate integrated waveguide resonator loaded with perturbation metalized vias is that the tuning elements can be assembled in the surface metal layers of the substrate integrated waveguide. Graphene makes an outstanding contribution to tunable microwave attenuators due to its valuable properties, especially tunable conductivity. However, there has been little research on frequency and amplitude independent modulation of multi-tuned filters/attenuators.
The embodiment of the utility model provides an integrated waveguide filter of independent adjustable substrate of frequency and range, the structure is shown in FIG. 1, mainly including last metal level 1, dielectric substrate 2 and lower metal level 3 that from top to bottom set gradually.
A plurality of metalized through holes vertically penetrate through the dielectric substrate 2 to form a metalized through hole array 6, and a plurality of resonant cavities which are linearly arranged are formed through the metalized through hole array 6. The number of the resonant cavities in this embodiment is three, and the three resonant cavities are respectively a first resonant cavity 7, a second resonant cavity 8 and a third resonant cavity 9, the three resonant cavities are circular with the same size, the centers of the three resonant cavities are on a straight line, two adjacent resonant cavities are intersected, and the three resonant cavities are in mirror symmetry with respect to the central line of the middle resonant cavity. A perturbation metallization through hole 10 is arranged at the center of each resonant cavity, and the metallization through hole array 6 and the perturbation metallization through hole 10 are communicated with the upper metal layer 1 and the lower metal layer 3. Furthermore, two adjacent resonant cavities are coupled to each other through an inductive coupling slot, specifically, in this embodiment, the first resonant cavity 7 and the second resonant cavity 8 are coupled to each other through a first inductive coupling slot 12, and the second resonant cavity 8 and the third resonant cavity 9 are coupled to each other through a second inductive coupling slot 13.
As shown in fig. 2, the inductive coupling grooves are formed on the upper metal layer 1, the inductive coupling grooves are respectively arranged at the intersection positions of two adjacent resonant cavities, and each inductive coupling groove is composed of two sections of arc-shaped grooves 15 extending to the two adjacent resonant cavities and a section of rectangular groove 14 connected between the two sections of arc-shaped grooves 15. Optionally, the arc-shaped slot 15 is formed by a continuous curve or by splicing a plurality of straight lines. The shape selection angle of the two segments of arc-shaped slots 15 of the inductive coupling slot of the embodiment is theta 1 Arc of (0 ° < theta) > 1 ≤180°。
Go up the position that metal level 1 corresponds every resonant cavity center and be provided with ring channel 11, all be provided with adjustable varactor group 4 on the ring channel 11, adjustable varactor group 4 of this embodiment comprises a plurality of varactor that the model is the same, and the model of varactor is SMV1405. One end of each varactor in the adjustable varactor group 4 is connected with the upper metal layer 1 outside the annular groove 11, and the other end of each varactor is connected with the upper metal layer 1 inside the annular groove 11 and connected to the lower metal layer 3 through the perturbation metallization through hole 10. The annular groove 11 at the center of each cavity of the present embodiment is located concentrically with the perturbation metallization via 10 at the center of each cavity.
An input/output feed port 16 is arranged on the lower metal layer 3, and an annular graphene layer 5 is arranged at a position of the lower metal layer 3 corresponding to the annular groove 11. As shown in fig. 3, two input/output feeding ports 16 of the present embodiment are arranged along a straight line, and are respectively connected to two resonant cavities at two ends. The input and output feed ports 16 comprise grounding coplanar waveguides 17 and arc-shaped short circuit slot lines 18 which are connected with each other, the arc-shaped short circuit slot lines 18 of the two input and output feed ports 16 are respectively surrounded outside the two annular graphene layers 5, and the grounding coplanar waveguides 17 of the two input and output feed ports 16 lead the arc-shaped short circuit slot lines 18 to the edges of the two sides of the lower metal layer 3; the dielectric substrate 2 is opened at the position where the resonant cavity correspondingly passes through the grounded coplanar waveguide 17, and metallized through holes are arranged on two sides of the grounded coplanar waveguide 17 and connected with the metallized through hole array 6. In an alternative embodiment, the two input and output feed ports 16 are led out from the middle points of the cavity side walls of the two resonant cavities, and the structures of the two input and output feed ports 16 are mirror-symmetrical about the central line of the middle resonant cavity. The arc short circuit slot line 18 of the present embodiment is formed by a continuous curve or by splicing a plurality of straight lines, and the angle of the arc short circuit slot line 18 is selected to be theta 2 Is in a sector shape, theta is more than or equal to 0 degree 2 ≤180°。
The annular slot gap has been seted up to the position that lower metal level 3 of this embodiment corresponds ring channel 11, and annular graphite alkene layer 5 is placed in the annular slot gap, and the shape of annular graphite alkene layer 5 is identical with the shape of annular slot gap, and the thickness of annular graphite alkene layer 5 is the same with the thickness of lower metal level 3. In a possible embodiment, the shape of the annular slotted aperture is square, rectangular or circular, and the annular groove 11 of the upper metal layer 1 corresponds to the same shape as the annular slotted aperture of the lower metal layer 3.
In the embodiment of the present invention, the dielectric substrate 2 is a 5mm thick F4bME substrate with a relative dielectric constant ε r =3.55, loss tangent tan δ =0.0002. The diameter of the metal through hole of the metallized through hole array 6 is 1mm, and the diameter of the perturbation metallized through hole 10 is 0.6mm. The geometrical parameters in fig. 2 and 3 are (in mm):
R＝13.5，d 1 ＝3，d 2 ＝3.5，d 3 ＝2.5，d 4 ＝3.5，l 1 ＝17，l 2 ＝19，R cpw ＝5.3，D＝1.8，l CPW ＝15，w s ＝0.2， w cpw ＝0.3，θ 1 ＝10°，θ 2 ＝85°。
as shown in fig. 4 and 5, the frequency tuning simulation result of the integrated waveguide filter with independently adjustable frequency and amplitude of the embodiment of the present invention is shown in the figure, and the sheet resistance value R of the ring-shaped graphene layer 5 g The capacitance value C of a single varactor in the adjustable varactor group 4 is changed singly and kept unchanged v1 And controlling the transmission amplitude of the filter to be unchanged, and continuously changing the center frequency.
In addition to this, the capacitance value C of a single varactor in the variable-capacitance bank 4 v1 Keeping the sheet resistance R of the annular graphene layer 5 unchanged and singly changing g And controlling the central frequency of the filter to be unchanged and the transmission amplitude to be dynamically changed.
As shown in fig. 6, the transmission amplitude tuning simulation result of the substrate integrated waveguide filter with independently adjustable frequency and amplitude according to the embodiment of the present invention is shown in the figure, through the capacitance C of a single varactor in the tunable varactor group 4 v1 Respectively set to three values, and the sheet resistance value R of the annular graphene layer 5 is changed g The central frequency of the control filter is continuously changed, the transmission amplitude is dynamically changed, and the changes of the central frequency and the transmission amplitude are independent and do not influence each other.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present application and are intended to be included within the scope of the present application.
Claims (9)
1. A substrate integrated waveguide filter with independently adjustable frequency and amplitude is characterized by comprising an upper metal layer (1), a dielectric substrate (2) and a lower metal layer (3) which are sequentially arranged from top to bottom; a plurality of metalized through holes are vertically arranged on the medium substrate (2) in a penetrating manner to form a metalized through hole array (6), a plurality of resonant cavities which are linearly arranged are formed through the metalized through hole array (6), a perturbation metalized through hole (10) is arranged at the center of each resonant cavity, two adjacent resonant cavities are mutually coupled through an inductive coupling groove, and the metalized through hole array (6) and the perturbation metalized through hole (10) are communicated with the upper metal layer (1) and the lower metal layer (3); an annular groove (11) is formed in the position, corresponding to the center of each resonant cavity, of the upper metal layer (1), an adjustable variable-capacitance tube group (4) is arranged on each annular groove (11), one end of each variable-capacitance tube in each adjustable variable-capacitance tube group (4) is connected with the upper metal layer (1) on the outer side of the annular groove (11), and the other end of each variable-capacitance tube is connected with the upper metal layer (1) on the inner side of the annular groove (11) and connected to the lower metal layer (3) through a perturbation metallization through hole (10); an input/output feed port (16) is arranged on the lower metal layer (3), and an annular graphene layer (5) is arranged at the position, corresponding to the annular groove (11), of the lower metal layer (3).
2. The frequency and amplitude independent tunable substrate integrated waveguide filter of claim 1, wherein the number of the resonant cavities is three, three resonant cavities are circular with the same size, the centers of the three resonant cavities are on a straight line, two adjacent resonant cavities intersect, and the three resonant cavities are mirror symmetric with respect to the center line of the middle one of the resonant cavities.
3. The integrated waveguide filter with independent adjustable frequency and amplitude as claimed in claim 2, wherein the input and output feed ports (16) are arranged in two along a straight line and are respectively connected to two resonant cavities at two ends;
the input and output feed port (16) comprises a grounded coplanar waveguide (17) and a connected arc short circuit slot line (18);
arc short circuit slot lines (18) of the two input and output feed ports (16) are respectively surrounded outside the two annular graphene layers (5), and the arc short circuit slot lines (18) are led to the edges of the two sides of the lower metal layer (3) by the grounding coplanar waveguides (17) of the two input and output feed ports (16); the dielectric substrate (2) is opened at the position where the resonant cavity correspondingly passes through the grounded coplanar waveguide (17), and metalized through holes are arranged on two sides of the grounded coplanar waveguide (17) and are connected with the metalized through hole array (6).
4. The substrate integrated waveguide filter with independent adjustable frequency and amplitude according to claim 3, wherein the two input and output feed ports (16) are led out from the middle points of the cavity side walls of the two resonant cavities, and the structures of the two input and output feed ports (16) are mirror-symmetrical; the arc short circuit slot line (18) is formed by continuous curves or by splicing a plurality of sections of straight lines.
5. The integrated waveguide filter with independently adjustable frequency and amplitude according to claim 2, wherein the inductive coupling slots are respectively disposed at the intersection of two adjacent resonant cavities, and the inductive coupling slots are composed of two segments of arc-shaped slots (15) extending to the two adjacent resonant cavities and a segment of rectangular slot (14) connected between the two segments of arc-shaped slots (15).
6. The frequency and amplitude independent tunable substrate integrated waveguide filter according to claim 5, wherein the curved slot (15) is formed by a continuous curve or by a multi-segment straight line splice.
7. The frequency and amplitude independently tunable substrate integrated waveguide filter according to claim 1, wherein the annular groove (11) at the center of each resonator is concentrically arranged with the perturbation metallization via (10) at the center of each resonator.
8. The frequency and amplitude independent tunable substrate integrated waveguide filter according to claim 1, characterized in that the tunable varactor group (4) is composed of varactors of the same type.
9. The substrate integrated waveguide filter with the independent adjustable frequency and amplitude according to claim 1, wherein an annular slotted gap is formed in the position, corresponding to the annular groove (11), of the lower metal layer (3), the annular graphene layer (5) is placed in the annular slotted gap, the shape of the annular graphene layer (5) is matched with that of the annular slotted gap, and the thickness of the annular graphene layer (5) is the same as that of the lower metal layer (3); the shape of the annular slotting gap is square, rectangular or circular, and the annular groove (11) of the upper metal layer (1) is correspondingly the same as the shape of the annular slotting gap of the lower metal layer (3).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202222246126.XU CN218039769U (en) | 2022-08-25 | 2022-08-25 | Frequency and amplitude independent adjustable substrate integrated waveguide filter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202222246126.XU CN218039769U (en) | 2022-08-25 | 2022-08-25 | Frequency and amplitude independent adjustable substrate integrated waveguide filter |
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Effective date of registration: 20230703 Address after: Room 3A03, 4th Floor, Information Port Building, No. 9 Gaoxin Third Road, High tech Zone, Xi'an City, Shaanxi Province, 710075 Patentee after: Xi'an Huahai transmission Microwave Technology Co.,Ltd. Address before: 225699 Building 1, No. 6 Xinchi Road, Chengnan Economic New District, Gaoyou City, Yangzhou City, Jiangsu Province Patentee before: Multimode Microwave Technology (Yangzhou) Co.,Ltd. |
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